JP6699039B2 - Thermoelectric conversion material and thermoelectric conversion element - Google Patents
Thermoelectric conversion material and thermoelectric conversion element Download PDFInfo
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- JP6699039B2 JP6699039B2 JP2019009911A JP2019009911A JP6699039B2 JP 6699039 B2 JP6699039 B2 JP 6699039B2 JP 2019009911 A JP2019009911 A JP 2019009911A JP 2019009911 A JP2019009911 A JP 2019009911A JP 6699039 B2 JP6699039 B2 JP 6699039B2
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- thermoelectric conversion
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- 238000006243 chemical reaction Methods 0.000 title claims description 143
- 239000000463 material Substances 0.000 title claims description 74
- 125000000217 alkyl group Chemical group 0.000 claims description 191
- 150000001875 compounds Chemical class 0.000 claims description 92
- 125000001424 substituent group Chemical group 0.000 claims description 66
- 125000003118 aryl group Chemical group 0.000 claims description 38
- 230000007704 transition Effects 0.000 claims description 32
- 125000003367 polycyclic group Chemical group 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 25
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- 238000000113 differential scanning calorimetry Methods 0.000 description 15
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- 239000000758 substrate Substances 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 11
- 238000011156 evaluation Methods 0.000 description 10
- 238000003786 synthesis reaction Methods 0.000 description 10
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 9
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 9
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- 125000002541 furyl group Chemical group 0.000 description 6
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- YFIJJNAKSZUOLT-UHFFFAOYSA-N Anthanthrene Chemical compound C1=C(C2=C34)C=CC=C2C=CC3=CC2=CC=CC3=CC=C1C4=C32 YFIJJNAKSZUOLT-UHFFFAOYSA-N 0.000 description 4
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- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
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- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- 102100033215 DNA nucleotidylexotransferase Human genes 0.000 description 3
- 101000800646 Homo sapiens DNA nucleotidylexotransferase Proteins 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- XBDYBAVJXHJMNQ-UHFFFAOYSA-N Tetrahydroanthracene Natural products C1=CC=C2C=C(CCCC3)C3=CC2=C1 XBDYBAVJXHJMNQ-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- SLGBZMMZGDRARJ-UHFFFAOYSA-N Triphenylene Natural products C1=CC=C2C3=CC=CC=C3C3=CC=CC=C3C2=C1 SLGBZMMZGDRARJ-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 125000002252 acyl group Chemical group 0.000 description 3
- 125000005377 alkyl thioxy group Chemical group 0.000 description 3
- 125000003277 amino group Chemical group 0.000 description 3
- 125000004196 benzothienyl group Chemical group S1C(=CC2=C1C=CC=C2)* 0.000 description 3
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- 239000004305 biphenyl Substances 0.000 description 3
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- 125000003438 dodecyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 3
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- CPNGPNLZQNNVQM-UHFFFAOYSA-N pteridine Chemical compound N1=CN=CC2=NC=CN=C21 CPNGPNLZQNNVQM-UHFFFAOYSA-N 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052701 rubidium Inorganic materials 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000010898 silica gel chromatography Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 238000002174 soft lithography Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 125000004434 sulfur atom Chemical group 0.000 description 1
- WROMPOXWARCANT-UHFFFAOYSA-N tfa trifluoroacetic acid Chemical compound OC(=O)C(F)(F)F.OC(=O)C(F)(F)F WROMPOXWARCANT-UHFFFAOYSA-N 0.000 description 1
- 238000007725 thermal activation Methods 0.000 description 1
- VJYJJHQEVLEOFL-UHFFFAOYSA-N thieno[3,2-b]thiophene Chemical compound S1C=CC2=C1C=CS2 VJYJJHQEVLEOFL-UHFFFAOYSA-N 0.000 description 1
- 125000002813 thiocarbonyl group Chemical group *C(*)=S 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 150000003623 transition metal compounds Chemical class 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/856—Thermoelectric active materials comprising organic compositions
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D487/00—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, not provided for by groups C07D451/00 - C07D477/00
- C07D487/22—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, not provided for by groups C07D451/00 - C07D477/00 in which the condensed system contains four or more hetero rings
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D491/00—Heterocyclic compounds containing in the condensed ring system both one or more rings having oxygen atoms as the only ring hetero atoms and one or more rings having nitrogen atoms as the only ring hetero atoms, not provided for by groups C07D451/00 - C07D459/00, C07D463/00, C07D477/00 or C07D489/00
- C07D491/22—Heterocyclic compounds containing in the condensed ring system both one or more rings having oxygen atoms as the only ring hetero atoms and one or more rings having nitrogen atoms as the only ring hetero atoms, not provided for by groups C07D451/00 - C07D459/00, C07D463/00, C07D477/00 or C07D489/00 in which the condensed system contains four or more hetero rings
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D495/00—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms
- C07D495/22—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms in which the condensed system contains four or more hetero rings
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/01—Manufacture or treatment
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- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Nitrogen Condensed Heterocyclic Rings (AREA)
- Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Description
本発明は、有機熱電変換材料及び当該材料を用いて作製される熱電変換素子に関する。 The present invention relates to an organic thermoelectric conversion material and a thermoelectric conversion element manufactured using the material.
近年、環境中の未利用熱エネルギーを電気エネルギーとして回収するための手段として熱電変換素子に対する注目が高まっている。 In recent years, attention has been paid to thermoelectric conversion elements as a means for recovering unused thermal energy in the environment as electric energy.
従来、熱電変換材料としては、熱電変換効率が比較的高いことから、主にCoSb3等の無機半導体材料が使用、研究されていたが、このような無機半導体材料は、希少元素を含み高価であると共に、材料の加工性に乏しいという問題がある。このため、近年においては、安価であって材料の加工性に優れる有機熱電変換材料の研究が盛んに行われている。 Conventionally, as a thermoelectric conversion material, an inorganic semiconductor material such as CoSb 3 has been mainly used and studied because the thermoelectric conversion efficiency is relatively high. However, such an inorganic semiconductor material contains a rare element and is expensive. In addition, there is a problem that the workability of the material is poor. Therefore, in recent years, researches on organic thermoelectric conversion materials, which are inexpensive and excellent in workability of materials, have been actively conducted.
従来の有機熱電変換材料としては、ポリアニリン(特許文献1、3、4、5及び7)、ポリフェニレンビニレン(特許文献2)、ポリチエニレンビニレン(特許文献2)、ポリピロール(特許文献4)といった導電性高分子からなるものが提案されている。 As conventional organic thermoelectric conversion materials, conductive materials such as polyaniline (Patent Documents 1, 3, 4, 5 and 7), polyphenylene vinylene (Patent Document 2), polythienylene vinylene (Patent Document 2), polypyrrole (Patent Document 4) are used. A polymer composed of a volatile polymer has been proposed.
しかしながら、これら導電性高分子は、熱電変換性能が十分ではなく、実用化のためにより高い熱電変換性能が求められている。このような熱電変換材料の熱電変換効率を高めるといった要求に対しては、従来、ドーパントを導入したり(特許文献2、3、4、5及び6)、ドーピングされた導電性高分子からなる層とドーピングされていない導電性高分子からなる層とを積層したり(特許文献4)、金属粒子を分散したり(特許文献1)、導電性高分子の分子軌道のエネルギー準位に対して特定のエネルギー準位差の分子軌道を持った熱励起アシスト剤を含有させる(特許文献7)ことが提案されている。 However, these conductive polymers have insufficient thermoelectric conversion performance, and higher thermoelectric conversion performance is required for practical use. In order to meet the demand for increasing the thermoelectric conversion efficiency of such thermoelectric conversion materials, conventionally, a dopant is introduced (Patent Documents 2, 3, 4, 5 and 6), or a layer made of a doped conductive polymer. And a layer made of an undoped conductive polymer (Patent Document 4), metal particles dispersed (Patent Document 1), and specified with respect to the energy level of the molecular orbital of the conductive polymer. It has been proposed to include a thermally excited assisting agent having a molecular orbital of the energy level difference (Patent Document 7).
ところで、熱電変換材料の熱電変換効率は、一般に下記式
[数1]無次元性能指数ZT=S2・σ・T/κ (A)
[式中、S(V/K)は熱起電力(ゼーベック係数)を表し、σ(S/m)は導電率を表し、κ(W/mK)は熱伝導率を表し、T(K)は絶対温度を表し、S2・σはパワーファクターを表す。]
で表される無次元性能指数(ZT)を指標とする。上記式から理解できる通り、無次元性能指数(ZT)は、ゼーベック係数及び導電率が大きく、熱伝導率が低い程高くなり、熱電変換性能が高いことを意味する。高いZTを得られる材料のうち、特にゼーベック係数が大きな材料は、有機熱電変換材料を用いるフレキシブル熱電変換素子において、素子の厚みを薄くすることや、多数セルの直列接続数を減らして断線による動作不良を低減することを可能にする。
By the way, the thermoelectric conversion efficiency of a thermoelectric conversion material is generally expressed by the following formula [Equation 1] dimensionless figure of merit ZT=S 2 ·σ·T/κ (A)
[In the formula, S(V/K) represents a thermoelectromotive force (Seebeck coefficient), σ(S/m) represents electrical conductivity, κ(W/mK) represents thermal conductivity, and T(K) Represents the absolute temperature, and S 2 ·σ represents the power factor. ]
The dimensionless figure of merit (ZT) represented by is used as an index. As can be understood from the above equation, the dimensionless figure of merit (ZT) means that the larger the Seebeck coefficient and the electric conductivity and the lower the thermal conductivity, the higher the value, and the higher the thermoelectric conversion performance. Among the materials that can obtain a high ZT, a material with a particularly large Seebeck coefficient is a flexible thermoelectric conversion element that uses an organic thermoelectric conversion material, and the operation due to disconnection by reducing the thickness of the element or reducing the number of series connection of many cells. It is possible to reduce defects.
この点、上述のドーパントの導入や金属粒子の分散は、主に導電率の増大によって熱電変換効率を向上しようとするものである。従来の非縮退半導体に対する熱電理論によれば、ゼーベック係数と導電率は一定のトレードオフ関係にあり、ゼーベック係数は、キャリア密度が小さいときに最大値を示し、キャリア密度が増大するにつれ小さくなるとされ(非特許文献2)、従来の導電性高分子では、最大値でもゼーベック係数は数mV/K程度であった。 In this respect, the introduction of the dopant and the dispersion of the metal particles are intended to improve the thermoelectric conversion efficiency mainly by increasing the conductivity. According to the conventional thermoelectric theory for non-degenerate semiconductors, the Seebeck coefficient and the conductivity have a certain trade-off relationship, and the Seebeck coefficient shows the maximum value when the carrier density is small, and becomes smaller as the carrier density increases. (Non-patent document 2), in the conventional conductive polymer, the Seebeck coefficient was about several mV/K even at the maximum value.
これに対して、上述の熱励起アシスト剤を含有させる試みは、熱起電力(ゼーベック係数)を高めることで、熱電変換効率を向上するものである。しかし、導電性高分子自体を改良して熱起電力(ゼーベック係数)を高めるものではない。 On the other hand, the above-mentioned attempt to contain the thermal excitation assisting agent improves the thermoelectric conversion efficiency by increasing the thermoelectromotive force (Seebeck coefficient). However, it does not improve the electromotive force itself (Seebeck coefficient) by improving the conductive polymer itself.
また、shimadaらは、有機半導体で低温において深いトラップが突然生じることに着目し、低分子半導体であるペンタセンについて点欠陥によって低温においてゼーベック係数が大きくなることを予想している(非特許文献4)。しかし、shimadaらの示したゼーベック係数は、1mV/K程度であり、しかも分子の熱運動による直接的なゼーベック係数の向上とそのための分子設計に対する何らの教示を与えるものでもない。 Also, Shimada et al. focused on the sudden occurrence of deep traps at low temperatures in organic semiconductors and predicted that the point defect of pentacene, which is a small molecule semiconductor, would increase the Seebeck coefficient at low temperatures (Non-Patent Document 4). .. However, the Seebeck coefficient shown by Shimada et al. is about 1 mV/K, and it does not give any teaching on the direct improvement of the Seebeck coefficient by the thermal motion of molecules and the molecular design therefor.
本発明は、従来の有機熱電変換材料に比べ格段に大きなゼーベック係数を示す有機熱電変換材料を提供することを課題とする。 An object of the present invention is to provide an organic thermoelectric conversion material having a Seebeck coefficient which is significantly larger than that of a conventional organic thermoelectric conversion material.
本発明者らは、上記課題に鑑み、従来の半導体における熱電理論に囚われずに優れた熱電変換効率を達成する導電性化合物の分子設計を検討したところ、基本骨格については、平面π共役構造を有し一般にキャリア輸送能の高い多環芳香族化合物に由来する構造とし、その一方で、所定の温度で熱運動する側鎖を有する化合物としたところ、従来の熱電理論からは想定し得ない格段に高いゼーベック係数を奏することを見出した。本発明はこのような知見に基づくものである。 In view of the above problems, the present inventors have studied the molecular design of a conductive compound that achieves excellent thermoelectric conversion efficiency without being bound by the thermoelectric theory in conventional semiconductors, and for the basic skeleton, a planar π-conjugated structure is used. It has a structure derived from a polycyclic aromatic compound that generally has a high carrier transport ability, and on the other hand, a compound having a side chain that thermally moves at a predetermined temperature, it is not possible to assume from conventional thermoelectric theory. It was found that it has a high Seebeck coefficient. The present invention is based on such knowledge.
すなわち、本発明は、以下の有機熱電変換材料及び有機熱電変換素子を提供する。
[1] キャリア輸送特性を有する多環芳香族環からなる基本骨格に、熱運動により基本骨格の分子間距離や分子パッキング構造の変化を引き起こすアルキル基を含む置換基が結合した導電性化合物を含む、有機熱電変換材料。
[2] キャリア輸送特性を有する多環芳香族環からなる基本骨格に、アルキル基またはアルキル基を有する置換基が結合し、−50℃〜200℃の範囲の温度で構造相転移(DSCにより特定される)する導電性化合物を含む、[1]に記載の有機熱電変換材料。
[3] 前記導電性化合物が下記一般式(1)で表されることを特徴とする、[1]又は[2]に記載の有機熱電変換材料。
(式中、Xはキャリア輸送特性を有する多環芳香族環を表し、nは1以上の整数を表す。nが2以上の場合には、各Xは異なる多環芳香族環であってもよい。Rはそれぞれ独立してアルキル基又はアルキル基を有する置換基を表す。mはRがXに結合可能な最大数以下の数を表わし、通常1〜8の整数を表す。)
[4] 前記導電性化合物が下記一般式(2)で表されることを特徴とする、[1]〜[3]のいずれかに記載の有機熱電変換材料。
(式中、Xはキャリア輸送特性を有する多環芳香族環を表し、Rはそれぞれ独立してアルキル基又はアルキル基を有する置換基を表す。mはRがXに結合可能な最大数以下の数を表わし、通常1〜8の整数を表す。)
[5] 前記導電性化合物中における前記置換基が占めるファンデルワールス体積比が5〜80%である、[1]〜[4]のいずれかに記載の有機熱電変換材料。
[6] 前記導電性化合物のDSCによる構造相転移点が、0〜180℃の範囲の温度で認められる、[1]〜[5]のいずれかに記載の有機熱電変換材料。
[7] 前記多環芳香族環は、多環芳香族芳香族炭化水素又は多環芳香族複素環である[1]〜[6]のいずれかに記載の有機熱電変換材料。
[8] 前記多環芳香族複素環が、ヘテロアセン又はポリへテロアセンである、[1]〜[7]のいずれかに記載の有機熱電変換材料。
[9] 前記多環芳香族複素環が、ポルフィリン又はポルフィラジンである、[1]〜[7]に記載の有機熱電変換材料。
[10] 前記多環芳香族複素環が、式(3)、(4)又は(5)で表される化合物である、[1]〜[9]のいずれかに記載の有機熱電変換材料。
(式中Yは、それぞれ独立してS、Se、SO2、O、N(R51)又はSi(R1)(R52)を表し、R51及びR52はそれぞれ独立して水素原子、アリール基、単環式芳香族複素環残基;アルキル基又は芳香族環残基で置換されたアミノ基、アルキルオキシ基、アルキルチオキシ基、エステル基、カルバモイル基、アセトアミド、チオ基又はアシル基を表し、Yはそれぞれ異なっていてもよい。Z1及びZ2はそれぞれ独立して水素原子、芳香族炭化水素又は芳香族複素環を表す。Z1及びZ2は同じでも異なっても良い。)
(式(4)及び(5)中、Wはそれぞれ独立してN又はC−を表し、少なくとも1つはC−であり、アルキル基又はアルキル基を含む置換基が結合しており、Zはそれぞれ独立して水素原子、芳香族炭化水素又は芳香族複素環を表し、同じでも異なっても良い。Mは金属原子を表す。)
[11] 前記導電性化合物が、式(6)、(7)、(10)、(11)、(12)又は(13)で表される化合物である、[1]〜[10]のいずれかに記載の有機熱電変換材料。
式(6)及び(7)中、X1及びX2は上記式(3)のYと同じであり、式(6)、(7)、(10)、(11)、(12)及び(13)中、R1及びR2の少なくとも1つ、典型的には両方、R3乃至R14の少なくとも1つ、並びにR47乃至R50は上記式(1)のRと同じであり、m1乃至m4は上記式(1)のmと同じであり、R47乃至R49は、1つ以上のWに結合しており、R50は、基本骨格の結合可能な位置に結合できるが、好ましくは1つ以上のWに結合している。
[12] [1]〜[11]のいずれかに記載の熱電変換材料を含む熱電変換層を有する有機熱電変換素子。
[13] [1]〜[11]のいずれかに記載の熱電変換材料を含む熱電変換層を有する横型または縦型の有機熱電変換素子。
That is, the present invention provides the following organic thermoelectric conversion material and organic thermoelectric conversion element.
[1] Containing a conductive compound in which a basic skeleton composed of a polycyclic aromatic ring having carrier-transporting properties is bonded with a substituent containing an alkyl group that causes a change in intermolecular distance or molecular packing structure of the basic skeleton due to thermal motion , Organic thermoelectric conversion materials.
[2] An alkyl group or a substituent having an alkyl group is bonded to a basic skeleton composed of a polycyclic aromatic ring having carrier-transporting properties, and a structural phase transition (identified by DSC) at a temperature in the range of −50° C. to 200° C. The organic thermoelectric conversion material according to [1], which comprises a conductive compound that
[3] The organic thermoelectric conversion material according to [1] or [2], wherein the conductive compound is represented by the following general formula (1).
(In the formula, X represents a polycyclic aromatic ring having carrier transport properties, and n represents an integer of 1 or more. When n is 2 or more, each X may be a different polycyclic aromatic ring. R represents each independently an alkyl group or a substituent having an alkyl group, and m represents a number equal to or less than the maximum number capable of binding to X, and usually represents an integer of 1 to 8.)
[4] The organic thermoelectric conversion material according to any one of [1] to [3], wherein the conductive compound is represented by the following general formula (2).
(In the formula, X represents a polycyclic aromatic ring having carrier-transporting properties, R independently represents an alkyl group or a substituent having an alkyl group, and m represents a maximum number of R or less that can be bonded to X. Represents a number, usually an integer of 1 to 8.)
[5] The organic thermoelectric conversion material according to any one of [1] to [4], wherein the van der Waals volume ratio occupied by the substituent in the conductive compound is 5 to 80%.
[6] The organic thermoelectric conversion material according to any of [1] to [5], wherein the structural phase transition point of the conductive compound by DSC is recognized at a temperature in the range of 0 to 180°C.
[7] The organic thermoelectric conversion material according to any one of [1] to [6], wherein the polycyclic aromatic ring is a polycyclic aromatic aromatic hydrocarbon or a polycyclic aromatic heterocycle.
[8] The organic thermoelectric conversion material according to any of [1] to [7], wherein the polycyclic aromatic heterocycle is heteroacene or polyheteroacene.
[9] The organic thermoelectric conversion material according to [1] to [7], wherein the polycyclic aromatic heterocycle is porphyrin or porphyrazine.
[10] The organic thermoelectric conversion material according to any one of [1] to [9], wherein the polycyclic aromatic heterocycle is a compound represented by formula (3), (4), or (5).
(In the formula, Y independently represents S, Se, SO 2 , O, N(R 51 ), or Si(R 1 )(R 52 ), and R 51 and R 52 are each independently a hydrogen atom, An aryl group, a monocyclic aromatic heterocyclic residue; an amino group, an alkyloxy group, an alkylthioxy group, an ester group, a carbamoyl group, an acetamide, a thio group or an acyl group substituted with an alkyl group or an aromatic ring residue, And Y may be different from each other. Z 1 and Z 2 each independently represent a hydrogen atom, an aromatic hydrocarbon or an aromatic heterocycle. Z 1 and Z 2 may be the same or different.)
(In formulas (4) and (5), W each independently represents N or C-, at least one is C-, and an alkyl group or a substituent containing an alkyl group is bonded, and Z is Each independently represent a hydrogen atom, an aromatic hydrocarbon or an aromatic heterocycle, which may be the same or different, and M represents a metal atom.)
[11] Any of [1] to [10], wherein the conductive compound is a compound represented by formula (6), (7), (10), (11), (12) or (13). The organic thermoelectric conversion material as described in 1.
In formulas (6) and (7), X 1 and X 2 are the same as Y in formula (3), and formulas (6), (7), (10), (11), (12) and ( In 13), at least one of R 1 and R 2 , typically both, at least one of R 3 to R 14 , and R 47 to R 50 are the same as R in the above formula (1), and m 1 to m 4 are the same as m in the above formula (1), R 47 to R 49 are bonded to one or more W, and R 50 can be bonded to a bondable position of the basic skeleton. , Preferably bound to one or more W.
[12] An organic thermoelectric conversion element having a thermoelectric conversion layer containing the thermoelectric conversion material according to any one of [1] to [11].
[13] A horizontal or vertical organic thermoelectric conversion element having a thermoelectric conversion layer containing the thermoelectric conversion material according to any one of [1] to [11].
本発明は、従来の有機熱電変換材料に比べ格段に大きなゼーベック係数を示す有機熱電変換材料及びそれを含む熱電変換層を有する有機熱電変換素子を提供することができる。 INDUSTRIAL APPLICABILITY The present invention can provide an organic thermoelectric conversion material having a Seebeck coefficient significantly larger than that of a conventional organic thermoelectric conversion material and an organic thermoelectric conversion element having a thermoelectric conversion layer containing the organic thermoelectric conversion material.
以下、本発明の実施形態について詳細に説明する。
本発明の有機熱電変換材料は、キャリア輸送特性を有する多環芳香族環からなる基本骨格と、これに結合するアルキル基またはアルキル基を有する置換基とを有し、所定温度で構造相転移を生じる導電性化合物を熱電変換物質として含有するものである。
Hereinafter, embodiments of the present invention will be described in detail.
The organic thermoelectric conversion material of the present invention has a basic skeleton composed of a polycyclic aromatic ring having carrier transport properties and an alkyl group or a substituent having an alkyl group bonded to the basic skeleton, and undergoes a structural phase transition at a predetermined temperature. The resulting conductive compound is contained as a thermoelectric conversion substance.
本発明で用いる導電性化合物は、平面π共役構造を有し一般にキャリア輸送能の高い多環芳香族化合物に由来する基本骨格を有する。このような構造では、隣接分子間でπ‐πスタッキングが期待され、隣接分子間のトランスファー積分が室温でバンド伝導が期待できるほど大きい。一方、本発明で用いる導電性化合物は、所定の温度で熱運動により基本骨格の分子間距離や分子パッキング構造の変化を引き起こす置換基が多環式芳香族環に結合している。このような置換基は、アルキル基またはアルキル基を有する置換基のように回転自由な結合を有しており、所定の温度で熱運動して、隣接する分子間距離や分子パッキング構造を変化させ、導電性化合物の体積変化や構造相転移を生じさせる。この結果、温度変化を敏感に捉え熱起電力(ゼーベック係数)が高められるものと解される。 The conductive compound used in the present invention has a planar π-conjugated structure and generally has a basic skeleton derived from a polycyclic aromatic compound having a high carrier transport ability. In such a structure, π-π stacking is expected between adjacent molecules, and the transfer integral between adjacent molecules is so large that band conduction can be expected at room temperature. On the other hand, the conductive compound used in the present invention has a substituent bonded to the polycyclic aromatic ring that causes a change in the intermolecular distance of the basic skeleton and the molecular packing structure due to thermal motion at a predetermined temperature. Such a substituent has a rotation-free bond like an alkyl group or a substituent having an alkyl group, and thermally moves at a predetermined temperature to change the distance between adjacent molecules or the molecular packing structure. , Causing a volume change or a structural phase transition of the conductive compound. As a result, it is understood that the thermoelectromotive force (Seebeck coefficient) is enhanced by sensitively catching the temperature change.
ここで、本願明細書中で用いる幾つかの用語について定義を記載する。
「多環芳香族化合物」とは、多環芳香属環を有する化合物を意味し、「多環芳香族化合物からなる基本骨格」とは、このような化合物の全構造のうち、置換基部分を除いた構造を意味する。
「ファンデルワールス体積」とは、分子を構成する原子をファンデルワールス半径を有する球体で近似した場合の、分子あるいはその構成要素の体積を意味する。「ファンデルワールス体積比」とは、分子の構成する複数の構成要素のファンデルワールス体積の比である。
「側鎖の長さ」とは、主骨格を構成する原子のうち側鎖が化学結合している原子の中心位置から、側鎖を構成する原子のうち安定構造において最も距離が離れた原子の中心位置までの距離を意味する。
「π共役構造」とは、多重結合が単結合と交互に連なった構造を表わし、「平面π共役構造」とは、π共役構造を形成する原子が同一平面状に存在する構造を意味する。
「熱起電力(ゼーベック係数)」とは、電気伝導性を有する物質上の異なる2カ所に生じる定常的な電位差の温度依存性を測定し、その勾配からS=−ΔV/ΔT(ΔVは電位差、ΔTは温度差)で計算される値を意味する。
「導電率」とは、ソース・メーター等によって測定された材料の電流−電圧特性から求められる電気コンダクタンスに対し、電流経路の長さを乗じ、断面積で除した値を意味する。
「熱伝導率」とは、サーモリフレクタンス法、温度波分析法、定常熱流法などによって測定した熱拡散率に、材料の比熱と密度を乗じることによって求めた値を意味する。
本願明細書において「構造相転移」とは、物質の空間的に均一とみなすことのできる構造(秩序構造でも無秩序構造でもよい)が、温度などの外的条件によって異なる状態の構造へと転移することを意味し、「構造相転移温度」とは、その変化が現れる温度を意味する。構造相転移温度は、例えば、示差走査熱量測定(DSC)によって測定した際において吸熱あるいは発熱ピークが現れることや、比熱の温度依存性が変化する(比熱を温度で微分した勾配が急変する)ことで測定される。また、半導体材料における導電率の温度依存性がアレニウス型の熱活性を示すのに対し、その活性化エネルギーが急変する温度としても測定される。
Here, the definitions of some terms used in the present specification will be described.
The “polycyclic aromatic compound” means a compound having a polycyclic aromatic ring, and the “basic skeleton composed of a polycyclic aromatic compound” means a substituent part in the whole structure of such a compound. Means the removed structure.
"Van der Waals volume" means the volume of a molecule or its constituent elements when the atoms constituting the molecule are approximated by a sphere having a van der Waals radius. “Van der Waals volume ratio” is the ratio of van der Waals volumes of a plurality of constituent elements of a molecule.
The "length of the side chain" means the atom that is the most distant in the stable structure among the atoms that form the side chain from the central position of the atom that the side chain chemically bonds among the atoms that form the main skeleton. It means the distance to the center position.
The “π-conjugated structure” means a structure in which multiple bonds are alternately arranged with a single bond, and the “planar π-conjugated structure” means a structure in which atoms forming the π-conjugated structure exist in the same plane.
"Thermo-electromotive force (Seebeck coefficient)" is the temperature dependence of the steady-state potential difference that occurs at two different locations on a substance having electrical conductivity, and from the gradient, S=-ΔV/ΔT (ΔV is the potential difference). , ΔT means a value calculated by the temperature difference).
“Conductivity” means a value obtained by multiplying the electric conductance obtained from the current-voltage characteristics of a material measured by a source meter or the like by the length of the current path and dividing by the cross-sectional area.
“Thermal conductivity” means a value obtained by multiplying the thermal diffusivity measured by the thermoreflectance method, the temperature wave analysis method, the steady heat flow method, etc. by the specific heat of the material and the density.
In the present specification, “structural phase transition” means that a structure that can be regarded as spatially uniform in a substance (whether an ordered structure or a disordered structure) is transformed into a structure in a different state depending on external conditions such as temperature. The “structural phase transition temperature” means the temperature at which the change appears. The structural phase transition temperature is, for example, that an endothermic or exothermic peak appears when measured by differential scanning calorimetry (DSC), and the temperature dependence of the specific heat changes (the gradient of the specific heat differentiated by temperature changes abruptly). Measured at. Further, while the temperature dependence of the electrical conductivity of the semiconductor material exhibits Arrhenius type thermal activation, it is also measured as the temperature at which the activation energy suddenly changes.
本発明の有機熱電変換材料に含有される導電性化合物としては、典型的には下記一般式(1)又は(2)で表される化合物が挙げられる。
式(1)および(2)中、Xはキャリア輸送特性を有する多環芳香族環を表し、Rはそれぞれ独立してアルキル基またはアルキル基を有する置換基を表す。mはRがXに結合可能な最大数以下の数であり、基本骨格により異なるが例えば1〜8の整数、典型的には、1〜2の整数を表す。式(1)中のnは1以上の整数であり、nが2以上の場合には、Xはそれぞれ異なる多環式芳香族環であってもよい。
The conductive compound contained in the organic thermoelectric conversion material of the present invention typically includes compounds represented by the following general formula (1) or (2).
In formulas (1) and (2), X represents a polycyclic aromatic ring having carrier transport properties, and R's each independently represent an alkyl group or a substituent having an alkyl group. m is a number that is equal to or less than the maximum number of Rs that can be bonded to X, and represents an integer of, for example, 1 to 8 and typically an integer of 1 to 2, although it varies depending on the basic skeleton. In the formula (1), n is an integer of 1 or more, and when n is 2 or more, X may be different polycyclic aromatic rings.
上述の通り、本発明の有機熱電変換材料に熱電変換物質として含有される導電性化合物の基本骨格を構成する上記Xで表される多環芳香族環は、芳香族環が2以上縮合した構造であり、平面π共役構造を有している。このため、分子が配向して並び隣接分子間のスタッキング効果を生じ易くなり、分子間の電子又は正孔の移動が容易になるため高いキャリア移動度を得られ易い。 As described above, the polycyclic aromatic ring represented by X, which constitutes the basic skeleton of the conductive compound contained in the organic thermoelectric conversion material of the present invention as a thermoelectric conversion substance, has a structure in which two or more aromatic rings are condensed. And has a plane π-conjugated structure. Therefore, molecules are aligned and a stacking effect between adjacent molecules is easily generated, and electrons or holes between molecules are easily moved, so that high carrier mobility is easily obtained.
上記Xで表される多環芳香族環は、芳香族炭化水素、及び芳香族複素環の何れか一方又は両方で構成することができ、キャリア移動度が高い多環構造を選択することが好ましい。 The polycyclic aromatic ring represented by X can be composed of either one or both of an aromatic hydrocarbon and an aromatic heterocycle, and it is preferable to select a polycyclic structure having high carrier mobility. ..
上記Xで表される多環芳香族環の具体例としては、例えば、
ナフタレン、アントラセン、テトラセン、ペンタセン、ヘキサセン、ヘプタセン、アセナフテン、ナフタセン、アズレン、フェナレン、ベンゾアントラセン、フェナントレン、クリセン、アンタントレン、ピラントレン、インデノインデン、ピセン、トリフェニレン、ペリレン、ナフトペリレン、コロネン、オバレン、ピレン、ベンゾピレン、ヘキサヘリセン、ヘプタヘリセン、オクタヘリセン、ノナヘリセン、デカヘリセン、ウンデカヘリセン、ドデカヘリセン等;テトラフェン、ペンタフェン、ヘキサフェン、ヘプタフェン、オクタフェン、ノナフェン、デカフェン、ウンデカフェン、ドデカフェン、C60フラーレン、C70フラーレンなどの多環芳香族炭化水素;並びに
インドール、イソインドール、プリン、キノリン、イソキノリン、キノキサリン、シンノリン、プテリジン、ベンゾピラン、アクリジン、キサンテン、ベンゾイミダゾール、インダゾール、フェナジン、ナフチリジン、ベンゾチアジアゾール、ベンゾチアゾール、ジチエノシロール、フルオレン、チエノチオフェン、カルバゾール、フェノチアジン、フェノオキサジン、ベンゾチエノベンゾチオフェン、ジチエノチオフェン、ベンゾジチオフェン、ベンゾジセレノフェン、ジナフトチエノチオフェン、ジアンスラチエノチオフェン、ベンゾビスオキサゾールなどのヘテロアセン系及びこれらが複数結合したポリヘテロアセン類、フェナントレン、フェナントリジン、シクロペンタジチオフェン、ベンゾ-C-シンノリン、ペリレンジカルボキシイミド、ベンゾトリフラン、ベンゾトリチオフェン、ポルフィリン、クロリン、コリン、フタロシアニン、ポルフィラジンなどの多環芳香族複素環が挙げられる。
Specific examples of the polycyclic aromatic ring represented by X include, for example,
Naphthalene, anthracene, tetracene, pentacene, hexacene, heptacene, acenaphthene, naphthacene, azulene, phenalene, benzoanthracene, phenanthrene, chrysene, anthanthrene, pyranthrene, indenoindene, picene, triphenylene, perylene, naphtoperylene, coronene, ovalen, pyrene, Benzopyrene, hexahelicene, heptahelicene, octahelicene, nonahelicene, decahelicene, undecahelicene, dodecahelicene, etc.; tetraphene, pentaphene, hexaphene, heptaphene, octaphene, nonaphene, decaphene, undecaphene, dodecaphene, C60 fullerene, C70 fullerene, etc. Hydrocarbons; as well as indole, isoindole, purine, quinoline, isoquinoline, quinoxaline, cinnoline, pteridine, benzopyran, acridine, xanthene, benzimidazole, indazole, phenazine, naphthyridine, benzothiadiazole, benzothiazole, dithienosilole, fluorene, thienothiophene, carbazole. , Phenothiazine, phenoxazine, benzothienobenzothiophene, dithienothiophene, benzodithiophene, benzodiselenophene, dinaphthothienothiophene, dianthrathienothiophene, benzobisoxazole, etc. , Phenanthrene, phenanthridine, cyclopentadithiophene, benzo-C-cinnoline, perylene dicarboximide, benzotrifuran, benzotrithiophene, porphyrin, chlorin, choline, phthalocyanine, porphyrazine and other polycyclic aromatic heterocycles Is mentioned.
中でも、キャリア輸送能が高い点で、ナフタレン、アンスラセン、ナフタセン、ペンタセン等のアセン系炭化水素や、ベンゾジチオフェン、ベンゾチエノベンゾチオフェン、ジナフトジチオフェン等のヘテロアセン類、或いはポルフィリン、フタロシアニン、ポルフィラジン等が好ましい。 Among them, acene hydrocarbons such as naphthalene, anthracene, naphthacene, and pentacene, heteroacenes such as benzodithiophene, benzothienobenzothiophene, and dinaphthodithiophene, or porphyrin, phthalocyanine, porphyrazine, etc., in terms of high carrier transport ability. Is preferred.
多環芳香族化合物の基本骨格の非限定的な具体例を以下に示す。
上述の通り、導電性化合物の基本骨格は、2以上の多環芳香族環が単結合で連結してπ共役構造を形成してもよい。基本骨格が複数の多環芳香族環が連結して構成される場合、多環芳香族環の数は、一般的には2〜2000とすることができ、2〜1000とすることが好ましく、2〜100とすることがより好ましく、2〜5とすることが更に好ましい。勿論、単一の多環芳香族環で基本骨格を構成してもよい。また、単数又は複数の多環芳香族環によって構成される基本骨格の分子量(Mw)は、50〜200000でもよく、好ましくは100〜100000であり、より好ましくは200〜50000Mwであり、特に好ましくは200〜30000である。
Non-limiting specific examples of the basic skeleton of the polycyclic aromatic compound are shown below.
As described above, in the basic skeleton of the conductive compound, two or more polycyclic aromatic rings may be linked by a single bond to form a π-conjugated structure. When the basic skeleton is constituted by connecting a plurality of polycyclic aromatic rings, the number of polycyclic aromatic rings can be generally 2 to 2000, and preferably 2 to 1000, It is more preferably from 2 to 100, further preferably from 2 to 5. Of course, the basic skeleton may be composed of a single polycyclic aromatic ring. The molecular weight (Mw) of the basic skeleton composed of one or more polycyclic aromatic rings may be 50 to 200,000, preferably 100 to 100,000, more preferably 200 to 50,000 Mw, and particularly preferably. It is 200 to 30,000.
本発明の有機熱電変換材料に含まれる導電性化合物は、上記の多環芳香族環によって発達したπ共役構造が形成されていると共に、当該多環芳香族環に上記Rで表されるアルキル基又はアルキル基を有する置換基が結合している。
このような置換基は、回転自由な結合を有しており、所定の温度、好ましくは−50℃〜200℃の範囲の何れかの温度で熱運動を生じる。このような置換基は、熱に敏感に応答して運動し、導電性化合物の体積変化や構造相転移を生じさせる。この結果、多環芳香族化合物の基本骨格等によるキャリア輸送能を変調させ、高効率の熱電変換を可能にする。このような置換基の熱運動による導電性化合物の構造相転移は、示差走査熱量測定(DSC)の吸発熱ピークにより確認することができる。
The conductive compound contained in the organic thermoelectric conversion material of the present invention has a π-conjugated structure developed by the polycyclic aromatic ring, and the polycyclic aromatic ring has an alkyl group represented by R above. Alternatively, a substituent having an alkyl group is bonded.
Such a substituent has a rotation-free bond and causes thermal motion at a predetermined temperature, preferably at any temperature in the range of -50°C to 200°C. Such a substituent moves sensitively to heat and causes a volume change or a structural phase transition of the conductive compound. As a result, the carrier transporting ability of the basic skeleton of the polycyclic aromatic compound is modulated, and highly efficient thermoelectric conversion becomes possible. The structural phase transition of the conductive compound due to the thermal motion of the substituent can be confirmed by an endothermic and exothermic peak of differential scanning calorimetry (DSC).
熱に敏感に応答して熱運動を生じるには、置換基は、多環芳香族骨格に回転自由な共有結合で結合することが好ましい。また、置換基自体も多数の回転自由な共有結合を有することが好ましく、このような点から、置換基は、アルキル基を有する置換基であることが好ましく、鎖状のアルキル基を主鎖とする置換基であることがより好ましく、直鎖のアルキル基が更に好ましい。 Substituents are preferably attached to the polycyclic aromatic skeleton by a rotation-free covalent bond in order to generate a thermal motion in response to heat. It is also preferable that the substituent itself has a large number of freely rotatable covalent bonds. From this point of view, the substituent is preferably a substituent having an alkyl group, and a chain alkyl group is used as a main chain. Is more preferable, and a linear alkyl group is still more preferable.
また、高い熱起電力(ゼーベック係数)を達成するためには、多環芳香族環による発達したπ共役構造を維持しながら、置換基の熱運動により熱に敏感に応答して構造相転移をもたらすことが重要と考えられ、この観点から、多環芳香族骨格に対する側鎖のファンデルワールス体積比は指標の1つと考えられる。多環芳香族骨格の違いにより結晶性や結晶形による凝集力が異なり、その分子間の結合力は異なるが、一般的に本発明の熱電変換材料に含有される導電性化合物においては、同化合物中における置換基が占めるファンデルワールス体積比が、5%〜80%であることが好ましく、25〜60%であることが好ましく、30〜60%がより好ましい。また10〜50%であることが更に好ましく、15〜50%であることが特に好ましい。この多環芳香族骨格に対する側鎖のファンデルワールス体積比を設計することにより構造相転移の温度や熱運動をコントロールすることが可能となる。素子を使用する環境により、求められる温度(温度差)が異なるが、この能力を活用することにより、適した素子を設計することが出来る。 Further, in order to achieve high thermoelectromotive force (Seebeck coefficient), while maintaining the π-conjugated structure developed by the polycyclic aromatic ring, the thermal motion of the substituent causes a structural phase transition in response to heat. It is considered that it is important to bring them, and from this viewpoint, the van der Waals volume ratio of the side chain to the polycyclic aromatic skeleton is considered to be one of the indicators. The crystallinity and the cohesive force due to the crystal form differ due to the difference in the polycyclic aromatic skeleton, and the bonding force between the molecules differs, but in the conductive compound contained in the thermoelectric conversion material of the present invention, the same compound is generally used. The Van der Waals volume ratio of the substituents therein is preferably 5% to 80%, more preferably 25% to 60%, and even more preferably 30% to 60%. Further, it is more preferably 10 to 50%, particularly preferably 15 to 50%. By designing the van der Waals volume ratio of the side chains to the polycyclic aromatic skeleton, it becomes possible to control the temperature and thermal motion of the structural phase transition. The required temperature (temperature difference) differs depending on the environment in which the element is used, but by utilizing this capability, a suitable element can be designed.
同様の点から、アルキル基またはアルキル基を有する置換基のアルキル基部分は、鎖状又は環状の、好ましくは直鎖状の炭素原子数1〜20の基であり、より好ましくは炭素数2〜18の基であり、更に好ましくは炭素数4〜15の基である。 From the same point, the alkyl group portion of the alkyl group or the substituent having an alkyl group is a chain or cyclic, preferably linear group having 1 to 20 carbon atoms, and more preferably 2 to 2 carbon atoms. 18 groups, more preferably 4 to 15 carbon atoms.
具体的には、直鎖アルキル基としては、メチル基、エチル基、プロピル基、ブチル基、ペンチル基、ヘキシル基、ヘプチル基、オクチル基、ノニル基、デシル基、ウンデシル基、ドデシル基、トリデシル基、テトラデシル基、ペンタデシル基、ヘキサデシル基、ヘプタデシル基、オクタデシル基、ノナデシル基、エイコシル基が挙げられ、ブチル基、ペンチル基、ヘキシル基、ヘプチル基、オクチル基、ノニル基、デシル基、ウンデシル基、ドデシル基、トリデシル基、テトラデシル基、ペンタデシル基、ヘキサデシル基、ヘプタデシル基、オクタデシル基、ノナデシル基、エイコシル基が好ましく、オクチル基、ノニル基、デシル基、ウンデシル基、ドデシル基、トリデシル基、テトラデシル基、ペンタデシル基がより好ましい。 Specifically, the linear alkyl group includes a methyl group, an ethyl group, a propyl group, a butyl group, a pentyl group, a hexyl group, a heptyl group, an octyl group, a nonyl group, a decyl group, an undecyl group, a dodecyl group, and a tridecyl group. , Tetradecyl group, pentadecyl group, hexadecyl group, heptadecyl group, octadecyl group, nonadecyl group, eicosyl group, butyl group, pentyl group, hexyl group, heptyl group, octyl group, nonyl group, decyl group, undecyl group, dodecyl group. Group, tridecyl group, tetradecyl group, pentadecyl group, hexadecyl group, heptadecyl group, octadecyl group, nonadecyl group, eicosyl group are preferable, octyl group, nonyl group, decyl group, undecyl group, dodecyl group, tridecyl group, tetradecyl group, pentadecyl group Groups are more preferred.
また分岐鎖アルキル基としては、例えばイソプロピル基、イソブチル基、イソアミル基、s−ブチル基、t−ブチル基、2−メチルブチル基、2−メチルヘキシル基、2−エチルヘキシル基、2−メチルオクチル基、2−エチルオクチル基を挙げることができ、イソブチル基、イソアミル基、s−ブチル基、t−ブチル基、2−メチルブチル基、2−メチルヘキシル基、2−エチルヘキシル基、2−メチルオクチル基、2−エチルオクチル基が挙げられる。また環状のアルキル基としてシクロペンチル基、シクロヘキシル基などが挙げられる。 Examples of the branched chain alkyl group include isopropyl group, isobutyl group, isoamyl group, s-butyl group, t-butyl group, 2-methylbutyl group, 2-methylhexyl group, 2-ethylhexyl group, 2-methyloctyl group, 2-ethyloctyl group can be mentioned, and isobutyl group, isoamyl group, s-butyl group, t-butyl group, 2-methylbutyl group, 2-methylhexyl group, 2-ethylhexyl group, 2-methyloctyl group, 2 -Ethyloctyl group may be mentioned. In addition, examples of the cyclic alkyl group include a cyclopentyl group and a cyclohexyl group.
アルキル基を有する置換基としては、例えば、アルキル基が以下の置換基で置換された基が挙げられる。
1)フェニル基、ビフェニル基、ナフチル基等のアリール基
2)フリル基、チエニル基、チエニレン基、テニル基、ピリジル基、ピペリジル基、キノリル基、イソキノリル基、イミダゾリル基、モルホリノ基、ベンゾチエニル基、ベンゾフェニル基等の単環式芳香族複素環残基
3)アルキル基又は芳香族環残基で置換されたアミノ基、アルキルオキシ基、アルキルチオキシ基、エステル基、カルバモイル基、アセトアミド、チオ基又はアシル基
4)フッ素原子、塩素原子、臭素原子などのハロゲン原子、ニトロ基、シアノ基
これらの置換基は1つ又は複数有しても良い。
Examples of the substituent having an alkyl group include groups in which the alkyl group is substituted with the following substituents.
1) Aryl group such as phenyl group, biphenyl group, naphthyl group, etc. 2) Furyl group, thienyl group, thienylene group, tenyl group, pyridyl group, piperidyl group, quinolyl group, isoquinolyl group, imidazolyl group, morpholino group, benzothienyl group, Monocyclic aromatic heterocyclic residue such as benzophenyl group 3) Alkyl group or amino group substituted with aromatic ring residue, alkyloxy group, alkylthioxy group, ester group, carbamoyl group, acetamide, thio group or Acyl group 4) Fluorine atom, chlorine atom, halogen atom such as bromine atom, nitro group, cyano group These substituents may have one or more.
また、アルキル基が、以下の化学構造を介して多環芳香族骨格に結合している基が挙げられる。
1)酸素原子、窒素原子、硫黄原子、ケイ素原子、リン原子などのヘテロ原子
2)フェニル基、ビフェニル基、ナフチル基等のアリール基
3)フリル基、チオフェン基、チエニル基、チエニレン基、テニル基、ピリジル基、イミダゾリル基、モルホリノ基、ベンゾチエニル基、ベンゾフェニル基等の芳香族複素環残基
4)カルボニル基、チオカルボニル基
Further, a group in which an alkyl group is bonded to a polycyclic aromatic skeleton through the following chemical structure can be mentioned.
1) hetero atom such as oxygen atom, nitrogen atom, sulfur atom, silicon atom, phosphorus atom 2) aryl group such as phenyl group, biphenyl group, naphthyl group 3) furyl group, thiophene group, thienyl group, thienylene group, tenyl group , Pyridyl group, imidazolyl group, morpholino group, benzothienyl group, benzophenyl group, etc. aromatic heterocyclic residue 4) carbonyl group, thiocarbonyl group
アルキル基を有する置換基としては、例えば、シリルエチニル基で置換されたアルキル基、アリール基(例えば、フェニル基、ビフェニル基、ナフチル基等)で置換されたアルキル基、芳香族複素環基(例えば、フリル基、チエニル基、ピリジル基、イミダゾリル基等)で置換されたアルキル基、アルコキシル基(例えば、メトキシ基、エトキシ基、プロピルオキシ基、ペンチルオキシ基、ヘキシルオキシ基、オクチルオキシ基、ドデシルオキシ基等)、シクロアルコキシル基(例えば、シクロペンチルオキシ基、シクロヘキシルオキシ基等)、アリールオキシ基(例えば、フェノキシ基、ナフチルオキシ基等)で置換されたアルキル基、アルキルチオ基(例えば、メチルチオ基、エチルチオ基、プロピルチオ基、ペンチルチオ基、ヘキシルチオ基、オクチルチオ基、ドデシルチオ基等)、シクロアルキルチオ基(例えば、シクロペンチルチオ基、シクロヘキシルチオ基等)、アリールチオ基(例えば、フェニルチオ基、ナフチルチオ基等)で置換されたアルキル基、アルコキシカルボニル基(例えば、メチルオキシカルボニル基、エチルオキシカルボニル基、ブチルオキシカルボニル基、オクチルオキシカルボニル基、ドデシルオキシカルボニル基等)、アリールオキシカルボニル基(例えば、フェニルオキシカルボニル基、ナフチルオキシカルボニル基等)で置換されたアルキル基、アルキルスルファモイル基、アルキルカルボニル基、アルキルチオカルボニル基、アルキルカルボニルオキシ基、アルキルカルボニルアミノ基、アルキルカルバモイル基、アルキルウレイド基、アルキルスルフィニル基、アルキルスルホニル基、アルキル基が置換したアリールスルホニル基、アルキルアミノ基、フルオロアルキル基、パーフルオロアルキル基、アルキルシリル基等が挙げられる。
本発明の導電性材料に含まれる導電性化合物では、上述した多環芳香族環の1つに対して複数の置換基を有してもよく、通常多環芳香族環の1つ当たり1〜8の置換基を有することができ、1〜4の置換基を有することが好ましく、1〜3の置換基を有することがより好ましく、2の置換基を有することが特に好ましい。
Examples of the substituent having an alkyl group include an alkyl group substituted with a silylethynyl group, an alkyl group substituted with an aryl group (eg, phenyl group, biphenyl group, naphthyl group, etc.), an aromatic heterocyclic group (eg, , A furyl group, a thienyl group, a pyridyl group, an imidazolyl group, etc.)-substituted alkyl group, an alkoxyl group (eg, methoxy group, ethoxy group, propyloxy group, pentyloxy group, hexyloxy group, octyloxy group, dodecyloxy group) Group, etc.), cycloalkoxyl group (eg, cyclopentyloxy group, cyclohexyloxy group, etc.), alkyl group substituted with an aryloxy group (eg, phenoxy group, naphthyloxy group, etc.), alkylthio group (eg, methylthio group, ethylthio group) Group, propylthio group, pentylthio group, hexylthio group, octylthio group, dodecylthio group, etc.), cycloalkylthio group (eg, cyclopentylthio group, cyclohexylthio group, etc.), arylthio group (eg, phenylthio group, naphthylthio group, etc.) Alkyl group, alkoxycarbonyl group (eg, methyloxycarbonyl group, ethyloxycarbonyl group, butyloxycarbonyl group, octyloxycarbonyl group, dodecyloxycarbonyl group, etc.), aryloxycarbonyl group (eg, phenyloxycarbonyl group, naphthyl) Oxycarbonyl group, etc.)-substituted alkyl group, alkylsulfamoyl group, alkylcarbonyl group, alkylthiocarbonyl group, alkylcarbonyloxy group, alkylcarbonylamino group, alkylcarbamoyl group, alkylureido group, alkylsulfinyl group, alkylsulfonyl group Group, an arylsulfonyl group substituted with an alkyl group, an alkylamino group, a fluoroalkyl group, a perfluoroalkyl group, an alkylsilyl group and the like.
The conductive compound contained in the conductive material of the present invention may have a plurality of substituents for one of the above-mentioned polycyclic aromatic rings, and usually 1 to 1 per polycyclic aromatic ring. It may have 8 substituents, preferably has 1 to 4 substituents, more preferably has 1 to 3 substituents, and particularly preferably has 2 substituents.
また、本発明を構成する導電性化合物では、上述した置換基のアルキル基部分(置換基がアルキル基である場合にはアルキル基自体)の分子量が導電性化合物全体の分子量に対して5〜80%を占めることが好ましい。例えば、多環芳香族骨格部分の一方の幅がベンゼン環一個程度に狭くもう一方の幅がそれより長い棒状の化合物では、その割合は25〜60%を占めることがより好ましく、多環芳香族骨格部分の幅がベンゼン環二個程度以上に幅広い化合物で、その割合は10〜50%を占めることが好ましい。また、置換基全体で回転自由な結合が複数存在することが好ましい。一方、アルキル基以外の構造は、多環芳香族環と共にπ共役構造を形成してもよい。適宜、アルキル基の数、置換位置、分鎖数、長さを調整することで最適な特性を得ることが可能となる。 Further, in the conductive compound which constitutes the present invention, the molecular weight of the alkyl group portion of the above-mentioned substituent (when the substituent is an alkyl group, the alkyl group itself) has a molecular weight of 5 to 80 with respect to the molecular weight of the entire conductive compound. % Is preferable. For example, in a rod-shaped compound in which one width of the polycyclic aromatic skeleton portion is narrow to about one benzene ring and the other width is longer than that, it is more preferable that the proportion occupies 25 to 60%. It is a compound in which the width of the skeleton portion is as wide as two or more benzene rings, and the proportion thereof is preferably 10 to 50%. Further, it is preferable that there are a plurality of rotatable bonds in the entire substituent. On the other hand, the structure other than the alkyl group may form a π-conjugated structure together with the polycyclic aromatic ring. Optimum properties can be obtained by appropriately adjusting the number of alkyl groups, the substitution position, the number of branched chains, and the length.
導電性化合物の構造相転移を生じる温度は、上記の多環芳香族化合物の基本骨格と、上記の置換基との組合せによって変動する。したがって、導電性化合物が使用されることが予想される温度に応じて、適宜好ましい分子設計をすることが好ましい。特に、本発明の導電性化合物では、導電性化合物のアルキル基の長さをコントロールすることで、熱電変換材料の相転移の温度の制御や熱運動の制御が可能と考えられる。従って、素子を用いる環境に応じて、基本骨格と置換基との組合せ、特にアルキル基の長さ又はファンデルワールス体積比を適宜選択し、効果的な熱電変換素子を得ることができると考えられる。
熱電変換素子の通常の用途からすると、−50℃〜200℃の範囲の温度で構造相転移を生じる分子設計とすることが好ましく、0〜180℃の範囲の温度で構造相転移を生じる分子設計とすることがより好ましく、10〜150℃の範囲の温度で構造相転移を生じる分子設計とすることが更に好ましい。従って、このような温度範囲で構造相転移を生じるように、基本骨格と置換基との組合せ、特にアルキル基の長さ又はファンデルワールス体積比を選択することが好ましい。
導電性化合物の構造相転移を生じる温度(構造相転移点)は、示差走査熱量測定(DSC)の吸発熱ピークにより確認することができる。導電性化合物の構造相転移がみられる温度の近傍に大きなパワーファクターの相対値を示す熱電変換素子は、当該温度付近を使用温度とするのに最適な熱電変換材料であると確認できる。
The temperature at which the structural phase transition of the conductive compound occurs changes depending on the combination of the basic skeleton of the polycyclic aromatic compound and the substituent. Therefore, it is preferable to appropriately design the molecule depending on the temperature at which the conductive compound is expected to be used. Particularly, in the conductive compound of the present invention, it is considered possible to control the temperature of the phase transition and the thermal motion of the thermoelectric conversion material by controlling the length of the alkyl group of the conductive compound. Therefore, it is considered that an effective thermoelectric conversion element can be obtained by appropriately selecting the combination of the basic skeleton and the substituent, particularly the length of the alkyl group or the van der Waals volume ratio according to the environment in which the element is used. ..
From the normal use of thermoelectric conversion elements, it is preferable to design a molecule that causes a structural phase transition at a temperature in the range of −50° C. to 200° C., and a molecular design that causes a structural phase transition at a temperature in the range of 0 to 180° C. Is more preferable, and it is more preferable that the molecular design is such that a structural phase transition occurs at a temperature in the range of 10 to 150°C. Therefore, it is preferable to select the combination of the basic skeleton and the substituent, particularly the length of the alkyl group or the van der Waals volume ratio so that the structural phase transition occurs in such a temperature range.
The temperature at which the structural phase transition of the conductive compound occurs (structural phase transition point) can be confirmed by the endothermic and exothermic peak of differential scanning calorimetry (DSC). It can be confirmed that the thermoelectric conversion element that exhibits a large relative value of the power factor in the vicinity of the temperature at which the structural phase transition of the conductive compound is observed is the most suitable thermoelectric conversion material in which the temperature around the temperature is used.
このような観点から、好ましい導電性化合物の代表的な例を以下に示す。 From such a viewpoint, typical examples of preferable conductive compounds are shown below.
(1)ポルフィリン骨格を有する導電性化合物
式(5)中、Mは金属原子を表す。式(4)及び(5)中、Zはそれぞれ独立して水素原子、或いは無置換、又はアルキル基若しくはアルキル基を有する置換基で置換された芳香族炭化水素又は芳香族複素環であり、無置換の芳香族炭化水素又は芳香族複素環が好ましい。複数のZは同じでも異なってもよい。
Wはそれぞれ独立してN又はCR3を表し、少なくとも1つのWはCR3を表し、R3は水素原子、アルキル基又はアルキル基を有する置換基を表し、少なくとも1つのR3はアルキル基又はアルキル基を有する置換基を表す。好ましくは対向する1組のWは、CR3を表し、R3がアルキル基若しくはアルキル基を有する置換基であり、他の対抗する1組のWは、N又はCR3を表し、R3は水素原子であり、より好ましくはCR3を表し、R3は水素原子である。
(1) Conductive compound having porphyrin skeleton
In formula (5), M represents a metal atom. In formulas (4) and (5), Z is independently a hydrogen atom, or an unsubstituted or substituted aromatic hydrocarbon or aromatic heterocycle substituted with an alkyl group or a substituent having an alkyl group, Substituted aromatic hydrocarbons or heterocycles are preferred. A plurality of Z may be the same or different.
W independently represents N or CR 3 , at least one W represents CR 3 , R 3 represents a hydrogen atom, an alkyl group or a substituent having an alkyl group, and at least one R 3 represents an alkyl group or It represents a substituent having an alkyl group. A pair of W which is preferably opposite represents CR 3, a substituent R 3 has an alkyl group or an alkyl group, is a set of W to other counter represents N or CR 3, R 3 is is a hydrogen atom, more preferably represents CR 3, R 3 is a hydrogen atom.
Zを構成する芳香族炭化水素環としては、例えば、フェニル、ビフェニル、ナフタレン、アントラセン、テトラセン、ペンタセン、ヘキサセン、ヘプタセン、アセナフテン、ナフタセン、アズレン、フェナレン、ベンゾアントラセン、フェナントレン、クリセン、アンタントレン、ピラントレン、インデノインデン、ピセン、トリフェニレン、ペリレン、ナフトペリレン、コロネン、オバレン、ピレン、ベンゾピレン、ヘキサヘリセン、ヘプタヘリセン、オクタヘリセン、ノナヘリセン、デカヘリセン、ウンデカヘリセン、ドデカヘリセン等;テトラフェン、ペンタフェン、ヘキサフェン、ヘプタフェン、オクタフェン、ノナフェン、デカフェン、ウンデカフェン、ドデカフェン、C60フラーレン、C70フラーレン等を挙げることができ、フェニル、ビフェニル、ナフタレンが好ましい。芳香族複素環としては、例えばフリル、チオフェン、チエニル、チエニレン、テニル、ピリジル、イミダゾリル、モルホリノ、ベンゾチエニル、ベンゾフェニル等を挙げることができる。これら芳香族炭化水素環又は芳香族複素環を任意選択で置換するアルキル基又はアルキル基を有する置換基としては、式(1)及び(2)のRで説明した基を挙げることができ、炭素数1〜15の直鎖アルキル基が好ましい。また、R3を構成するアルキル基又はアルキル基を有する置換基も、式(1)及び(2)のRで説明した基を挙げることができる。好ましくは、1組の対向する位置のR3が炭素数1〜30の直鎖アルキル基又は炭素数1〜30の直鎖アルキル基を有する基であることが好ましく、炭素数5〜20の直鎖アルキル基又は炭素数5〜20の直鎖アルキル基を有する基であることがより好ましく、炭素数8〜15の直鎖アルキル基又は炭素数8〜15の直鎖アルキル基を有する基であることがより好ましい。
また、アルキル基又はアルキル部分の導電性化合物全体に対するファンデルワールス体積比は、5〜60%であることが好ましく、10〜50%であることがより好ましく、15〜50%であることが更に好ましい。
Examples of the aromatic hydrocarbon ring constituting Z include phenyl, biphenyl, naphthalene, anthracene, tetracene, pentacene, hexacene, heptacene, acenaphthene, naphthacene, azulene, phenalene, benzoanthracene, phenanthrene, chrysene, anthanthrene, pyranthrene, Indenoindene, picene, triphenylene, perylene, naphthoperylene, coronene, ovalen, pyrene, benzopyrene, hexahelicene, heptahelicene, octahelicene, nonahelicene, decahelicene, undecahelicene, dodecahelicene, tetraphene, pentaphene, hexaphene, heptaphene, octaphene, nonaphene , Decaphene, undecaphene, dodecaphene, C60 fullerene, C70 fullerene and the like can be mentioned, and phenyl, biphenyl and naphthalene are preferable. Examples of the aromatic heterocycle include furyl, thiophene, thienyl, thienylene, tenyl, pyridyl, imidazolyl, morpholino, benzothienyl and benzophenyl. Examples of the alkyl group or a substituent having an alkyl group which optionally substitutes the aromatic hydrocarbon ring or the aromatic heterocycle include the groups described for R in the formulas (1) and (2), and A straight-chain alkyl group having a number of 1 to 15 is preferable. Further, as the alkyl group or the substituent having an alkyl group which constitutes R 3 , the groups described for R in the formulas (1) and (2) can be mentioned. Preferably, a pair of R 3 at opposite positions is a linear alkyl group having 1 to 30 carbon atoms or a group having a linear alkyl group having 1 to 30 carbon atoms, and a group having 5 to 20 carbon atoms is preferable. A chain alkyl group or a group having a linear alkyl group having 5 to 20 carbon atoms is more preferable, and a linear alkyl group having 8 to 15 carbon atoms or a linear alkyl group having 8 to 15 carbon atoms is preferable. Is more preferable.
The van der Waals volume ratio of the alkyl group or the alkyl moiety to the whole conductive compound is preferably 5 to 60%, more preferably 10 to 50%, and further preferably 15 to 50%. preferable.
このようなポルフィリンを基本骨格とする導電性化合物としては、以下の一般式(10)〜(13)で表される化合物が好ましい。
式(10)、(11)、(12)又は(13)中、R47乃至R50は上記式(1)のRと同じであり、R47乃至R49は少なくとも1つのWに結合しており、R50は基本骨格の結合可能な位置に結合できるが、好ましくは少なくとも1つのWに結合しており、m1乃至m4は上記式(1)のmと同じである。m1、m2、m3又はm4が2以上の場合、複数のR47、R48、R49又はR50は異なっていても同じでもよい。R47乃至R50を構成するアルキル基又はアルキル基を有する置換基も、式(1)及び(2)のRで説明した基を挙げることができる。好ましくは、1組の対向する位置のR47、R48、R49又はR50が炭素数1〜20の直鎖アルキル基又は炭素数1〜20の直鎖アルキル基を有する基であることが好ましく、炭素数4〜15の直鎖アルキル基又は炭素数4〜15の直鎖アルキル基を有する基であることがより好ましく、炭素数8〜13の直鎖アルキル基又は炭素数8〜13の直鎖アルキル基を有する基であることがより好ましい。
また、アルキル基又はアルキル部分の導電性化合物全体に対するファンデルワールス体積比は、5〜60%であることが好ましく、10〜50%であることがより好ましい。特に15〜50%であることが好ましい。
As the conductive compound having such a porphyrin as a basic skeleton, compounds represented by the following general formulas (10) to (13) are preferable.
In formula (10), (11), (12) or (13), R 47 to R 50 are the same as R in the above formula (1), and R 47 to R 49 are bonded to at least one W. R 50 can be bonded to a bondable position of the basic skeleton, but is preferably bonded to at least one W, and m 1 to m 4 are the same as m in the above formula (1). When m 1 , m 2 , m 3 or m 4 is 2 or more, a plurality of R 47 , R 48 , R 49 or R 50 may be different or the same. Examples of the alkyl group or the substituent having an alkyl group which constitutes R 47 to R 50 also include the groups described for R in formulas (1) and (2). Preferably, a pair of R 47 , R 48 , R 49 or R 50 at opposite positions is a linear alkyl group having 1 to 20 carbon atoms or a group having a linear alkyl group having 1 to 20 carbon atoms. More preferably, it is a straight-chain alkyl group having 4 to 15 carbon atoms or a group having a straight-chain alkyl group having 4 to 15 carbon atoms, more preferably a straight-chain alkyl group having 8 to 13 carbon atoms or a straight chain alkyl group having 8 to 13 carbon atoms. A group having a linear alkyl group is more preferable.
Further, the van der Waals volume ratio of the alkyl group or the alkyl portion to the whole conductive compound is preferably 5 to 60%, more preferably 10 to 50%. It is particularly preferably 15 to 50%.
このようなポルフィリン構造を基本骨格とする導電性化合物は、例えば、アルキル基又はアルキル部分を炭素数4〜15の直鎖アルキル基又は炭素数4〜15の直鎖アルキル基を有する基とした場合の構造相転移は30〜120℃の温度領域において生じる。そのため、例えば30〜150℃での使用が想定される場合、アルキル基又はアルキル部分を炭素数4〜15の直鎖アルキル基又は炭素数4〜15の直鎖アルキル基を有する基とすることが好ましい。 The conductive compound having such a porphyrin structure as a basic skeleton has, for example, an alkyl group or an alkyl moiety as a group having a linear alkyl group having 4 to 15 carbon atoms or a linear alkyl group having 4 to 15 carbon atoms. The structural phase transition occurs in the temperature range of 30 to 120°C. Therefore, for example, when it is expected to be used at 30 to 150° C., the alkyl group or the alkyl moiety may be a linear alkyl group having 4 to 15 carbon atoms or a group having a linear alkyl group having 4 to 15 carbon atoms. preferable.
(2)へテロアセンを基本骨格とする導電性化合物
式(3)中、Yはそれぞれ独立して、S、Se、SO2、O、N(R51)、Si(R51)(R52)を表し、R51及びR52はそれぞれ独立して、水素原子、置換基を表し、好ましい置換基としてはアリール基、単環式芳香族複素環残基;アルキル基又は芳香族環残基で置換されたアミノ基、アルキルオキシ基、アルキルチオキシ基、エステル基、カルバモイル基、アセトアミド、チオ基又はアシル基;ハロゲン原子、ニトロ基、又はシアノ基である。アリール基としては、フェニル基、ビフェニル基、ナフチル基等が挙げられ、単環式芳香族複素環残基としては、フリル基、チエニル基、チエニレン基、テニル基、ピリジル基、ピペリジル基、キノリル基、イソキノリル基、イミダゾリル基、モルホリノ基、ベンゾチエニル基、ベンゾフェニル基等が挙げられ、ハロゲン原子としては、フッ素原子、塩素原子、臭素原子等が挙げられる。Yは、好ましくはS又はSeであり、特に好ましくはSである。
Z1及びZ2はそれぞれ独立して、アルキル基又はアルキル基を有する置換基、或いはアルキル基又はアルキル基を有する置換基で置換された芳香族炭化水素環又は芳香族複素環を表し、Z1及びZ2は同じでも異なっても良い。
芳香族炭化水素環としては、例えば、単環式、又は複数の環が連結又は縮合した芳香族炭化水素環を挙げることができる。単環式芳香族炭化水素環としては、例えば炭素数3〜7、好ましくは4〜6の芳香族炭化水素環を挙げることができる。また、複数の環が連結又は縮合した芳香族炭化水素環としては、炭素数3〜7、好ましくは4〜6の芳香族炭化水素環が2以上(例えば2〜7個、2〜5個、又は2〜3個)連結又は縮合した構造を挙げることができる。具体的な芳香族炭化水素環の例としては、例えばフェニル、ビフェニル、ナフチル、アントラセン、テトラセン、ペンタセン、フェナントレン、クリセン、トリフェニレン、テトラフェン、ピレン、ピセン、ペンタフェン、ペリレン、ヘリセン、コロネン等を挙げることができる。芳香族複素環としては、例えばフリル、チオフェン、チエニル、チエニレン、テニル、ピリジル、イミダゾリル、モルホリノ、ベンゾチエニル、ベンゾフェニル等を挙げることができる。
アルキル基又はアルキル基を有する置換基としては、式(1)及び(2)のRで説明した基を挙げることができる。好ましくは、炭素数1〜30の直鎖アルキル基又は炭素数1〜30の直鎖アルキル基を有する基であることが好ましく、炭素数1〜20の直鎖アルキル基又は炭素数1〜20の直鎖アルキル基を有する基であることがより好ましく、炭素数5〜15の直鎖アルキル基又は炭素数5〜15の直鎖アルキル基を有する基であることがより好ましい。
また、アルキル基又はアルキル部分の導電性化合物全体に対するファンデルワールス体積比は5〜80%であることが好ましく、25〜60%であることがより好ましく、30〜60%であることが更に好ましい。
(2) Conductive compound having heteroacene as a basic skeleton
In formula (3), Y represents each independently S, Se, SO 2 , O, N(R 51 ), Si(R 51 )(R 52 ), and R 51 and R 52 each independently. Represents a hydrogen atom, a substituent, and as a preferable substituent, an aryl group, a monocyclic aromatic heterocyclic residue; an amino group substituted with an alkyl group or an aromatic ring residue, an alkyloxy group, an alkylthioxy group, An ester group, a carbamoyl group, an acetamide, a thio group or an acyl group; a halogen atom, a nitro group or a cyano group. Examples of the aryl group include a phenyl group, a biphenyl group and a naphthyl group, and examples of the monocyclic aromatic heterocyclic residue include a furyl group, a thienyl group, a thienylene group, a tenyl group, a pyridyl group, a piperidyl group and a quinolyl group. , An isoquinolyl group, an imidazolyl group, a morpholino group, a benzothienyl group, a benzophenyl group, and the like, and the halogen atom includes a fluorine atom, a chlorine atom, a bromine atom, and the like. Y is preferably S or Se, and particularly preferably S.
Z 1 and Z 2 each independently represent an alkyl group or a substituent having an alkyl group, or an aromatic hydrocarbon ring or an aromatic heterocycle substituted with an alkyl group or a substituent having an alkyl group, and Z 1 And Z 2 may be the same or different.
Examples of the aromatic hydrocarbon ring include a monocyclic aromatic ring or an aromatic hydrocarbon ring in which a plurality of rings are linked or fused. Examples of the monocyclic aromatic hydrocarbon ring include an aromatic hydrocarbon ring having 3 to 7 carbon atoms, preferably 4 to 6 carbon atoms. Further, as the aromatic hydrocarbon ring in which a plurality of rings are linked or condensed, two or more aromatic hydrocarbon rings having 3 to 7 carbon atoms, preferably 4 to 6 carbon atoms (for example, 2 to 7, 2 to 5, Or 2 to 3) linked or condensed structures. Specific examples of the aromatic hydrocarbon ring include, for example, phenyl, biphenyl, naphthyl, anthracene, tetracene, pentacene, phenanthrene, chrysene, triphenylene, tetraphene, pyrene, picene, pentaphene, perylene, helicene, coronene and the like. You can Examples of the aromatic heterocycle include furyl, thiophene, thienyl, thienylene, tenyl, pyridyl, imidazolyl, morpholino, benzothienyl and benzophenyl.
Examples of the alkyl group or the substituent having the alkyl group include the groups described for R in the formulas (1) and (2). Preferably, it is a group having a linear alkyl group having 1 to 30 carbon atoms or a linear alkyl group having 1 to 30 carbon atoms, and preferably a linear alkyl group having 1 to 20 carbon atoms or a linear alkyl group having 1 to 20 carbon atoms. A group having a linear alkyl group is more preferable, and a group having a linear alkyl group having 5 to 15 carbon atoms or a linear alkyl group having 5 to 15 carbon atoms is more preferable.
In addition, the van der Waals volume ratio of the alkyl group or the alkyl portion to the entire conductive compound is preferably 5 to 80%, more preferably 25 to 60%, and further preferably 30 to 60%. ..
このようなヘテロアセンを基本骨格とする導電性化合物としては、以下の化合物が好ましい
(2−1)BTBT又はそれに類似する構造を基本骨格とする導電性化合物
式(6)中、X1及びX2は式(3)のYと同じであり、好ましくはS又はSeであり、特に好ましくはSである。R1及びR2の少なくとも1つ、好ましくは両方、上記式(1)及び(2)のRで説明したアルキル基又はアルキル基を有する置換基と同じでよい。もっとも、式(6)の化合物では、炭素数1〜15の直鎖アルキル基又は炭素数1〜15の直鎖アルキル基を有する基であることが好ましく、炭素数6〜12の直鎖アルキル基又は炭素数6〜12の直鎖アルキル基を有する基であることがより好ましい。
また、アルキル基又はアルキル部分の導電性化合物全体に対するファンデルワールス体積比は5〜80%であることが好ましく、25〜60%であることがより好ましく、30〜60%であることが更に好ましい。
このような構造を基本骨格とする導電性化合物は、例えば、アルキル基又はアルキル部分を炭素数5〜12の直鎖アルキル基又は炭素数5〜12の直鎖アルキル部分とした場合の構造相転移は70〜120℃の温度領域において生じる。そのため、例えば50℃〜150℃での使用が想定される場合には、アルキル基又はアルキル部分を炭素数5〜12の直鎖アルキル基又は炭素数5〜12の直鎖アルキル部分とすることが好ましい。
なお、式(6)の化合物は、例えばWO2008/047896に記載の方法で製造することができ、その内容を参照により本願明細書に組み込む。
As such a conductive compound having a heteroacene as a basic skeleton, the following compounds are preferable (2-1) BTBT or a conductive compound having a structure similar to BTBT as a basic skeleton
In formula (6), X 1 and X 2 are the same as Y in formula (3), preferably S or Se, and particularly preferably S. At least one of R 1 and R 2 , and preferably both, may be the same as the alkyl group or the substituent having the alkyl group, which is described in R in the above formulas (1) and (2). However, the compound of the formula (6) is preferably a linear alkyl group having 1 to 15 carbon atoms or a group having a linear alkyl group having 1 to 15 carbon atoms, and a linear alkyl group having 6 to 12 carbon atoms. Alternatively, a group having a linear alkyl group having 6 to 12 carbon atoms is more preferable.
In addition, the van der Waals volume ratio of the alkyl group or the alkyl portion to the entire conductive compound is preferably 5 to 80%, more preferably 25 to 60%, and further preferably 30 to 60%. ..
The conductive compound having such a structure as a basic skeleton is, for example, a structural phase transition in which an alkyl group or an alkyl moiety is a linear alkyl group having 5 to 12 carbon atoms or a linear alkyl moiety having 5 to 12 carbon atoms. Occurs in the temperature range of 70 to 120°C. Therefore, for example, when it is expected to be used at 50°C to 150°C, the alkyl group or the alkyl moiety may be a linear alkyl group having 5 to 12 carbon atoms or a linear alkyl moiety having 5 to 12 carbon atoms. preferable.
The compound of formula (6) can be produced, for example, by the method described in WO2008/047896, the contents of which are incorporated herein by reference.
(2−2)DNTT又はそれに類似する構造を基本骨格とする導電性化合物
式(7)中、X1及びX2は上記式(3)のYと同じであり、好ましくはS又はSeであり、特に好ましくはSである。R3乃至R14は、水素、又は上記式(1)及び(2)のRで説明したアルキル基又はアルキル基を有する置換基であり、R3乃至R14の少なくとも1つは、上記式(1)及び(2)のRで説明したアルキル基又はアルキル基を有する置換基である。もっとも、式(7)の化合物では、R4及至R7、及びR10及至R13の何れかは、アルキル基又はアルキル基を有する置換基であることが好ましく、特にR6及びR12、又はR5及びR11に位置することがより好ましい。また、アルキル基又はアルキル基を有する置換基としては、炭素数1〜20の直鎖アルキル基又は炭素数1〜20の直鎖アルキル基を有する基であることが好ましく、炭素数4〜16の直鎖アルキル基又は炭素数4〜16の直鎖アルキル基を有する基であることがより好ましく、炭素数6〜12の直鎖アルキル基又は炭素数6〜12の直鎖アルキル基を有する基であることがより好ましい。
また、アルキル基又はアルキル部分の導電性化合物全体に対するファンデルワールス体積比は5〜80%であることが好ましく、25〜60%であることがより好ましく、30〜60%であることが更に好ましい。
このような構造を基本骨格とする導電性化合物は、例えば、アルキル基又はアルキル部分を炭素数6〜12の直鎖アルキル基又は炭素数6〜12の直鎖アルキル部分とした場合の構造相転移は100〜140℃の温度領域において生じる。そのため、例えば80℃〜150℃での使用が想定される場合には、アルキル基又はアルキル部分を炭素数6〜12の直鎖アルキル基又は炭素数6〜12の直鎖アルキル部分とすることが好ましい。
なお、式(7)の化合物は、例えばWO/2010/098372に記載の方法で製造することができ、その内容を参照により本願明細書に組み込む。
(2-2) Conductive compound having DNTT or a structure similar thereto as a basic skeleton
In formula (7), X 1 and X 2 are the same as Y in formula (3) above, preferably S or Se, and particularly preferably S. R 3 to R 14 are hydrogen or a substituent having an alkyl group or an alkyl group described for R in the above formulas (1) and (2), and at least one of R 3 to R 14 is the above formula ( It is an alkyl group or a substituent having an alkyl group described for R in 1) and (2). However, in the compound of formula (7), it is preferable that any one of R 4 to R 7 and R 10 to R 13 is an alkyl group or a substituent having an alkyl group, and particularly R 6 and R 12 , or More preferably it is located at R 5 and R 11 . Further, the alkyl group or the substituent having an alkyl group is preferably a linear alkyl group having 1 to 20 carbon atoms or a group having a linear alkyl group having 1 to 20 carbon atoms, and having 4 to 16 carbon atoms. A straight-chain alkyl group or a group having a straight-chain alkyl group having 4 to 16 carbon atoms is more preferable, and a straight-chain alkyl group having 6 to 12 carbon atoms or a straight-chain alkyl group having 6 to 12 carbon atoms is used. More preferably.
In addition, the van der Waals volume ratio of the alkyl group or the alkyl portion to the entire conductive compound is preferably 5 to 80%, more preferably 25 to 60%, and further preferably 30 to 60%. ..
A conductive compound having such a structure as a basic skeleton is, for example, a structural phase transition in the case where an alkyl group or an alkyl moiety is a linear alkyl group having 6 to 12 carbon atoms or a linear alkyl moiety having 6 to 12 carbon atoms. Occurs in the temperature range of 100 to 140°C. Therefore, for example, when it is expected to be used at 80° C. to 150° C., the alkyl group or the alkyl moiety may be a linear alkyl group having 6 to 12 carbon atoms or a linear alkyl moiety having 6 to 12 carbon atoms. preferable.
The compound of formula (7) can be produced, for example, by the method described in WO/2010/098372, the contents of which are incorporated herein by reference.
(4)DATT又はそれに類似する構造を基本骨格とする導電性化合物
式(8)中、X1及びX2は上記式(3)のYと同じであり、好ましくはS又はSeであり、特に好ましくはSである。R15乃至R30は、水素、又は上記式(1)及び(2)のRで説明したアルキル基又はアルキル基を有する置換基であり、R15乃至R30の少なくとも1つは、Rで説明したアルキル基又はアルキル基を有する置換基である。もっとも、式(8)の化合物では、R15乃至R30中、R18及びR26は、上記式(1)及び(2)のRで説明したアルキル基又はアルキル基を有する置換基であり、他は、水素であることが好ましい。また、アルキル基又はアルキル基を有する置換基としては、炭素数1〜25の直鎖アルキル基又は炭素数1〜25の直鎖アルキル基を有する基であることが好ましく、炭素数5〜20の直鎖アルキル基又は炭素数5〜20の直鎖アルキル基を有する基であることがより好ましく、炭素数6〜15の直鎖アルキル基又は炭素数6〜15の直鎖アルキル基を有する基であることがより好ましい。
また、アルキル基又はアルキル部分の導電性化合物全体に対するファンデルワールス体積比は5〜80%であることが好ましく、25〜60%であることがより好ましく、30〜60%であることが更に好ましい。
このような構造を基本骨格とする導電性化合物は、例えば、アルキル基又はアルキル部分を炭素数6〜15の直鎖アルキル基又は炭素数6〜15の直鎖アルキル部分とした場合の構造相転移は100〜140℃の温度領域に生じる。そのため、例えば80℃〜150℃での使用が想定される場合には、アルキル基又はアルキル部分を炭素数6〜15の直鎖アルキル基又は炭素数6〜15の直鎖アルキル部分とすることが好ましい。
なお、式(8)の化合物は、例えばWO2008/050726に記載の方法で製造することができ、その内容を参照により本願明細書に組み込む。
(4) Conductive compound having DATT or a structure similar thereto as a basic skeleton
In formula (8), X 1 and X 2 are the same as Y in formula (3) above, preferably S or Se, and particularly preferably S. R 15 to R 30 are hydrogen or a substituent having an alkyl group or an alkyl group described for R in the above formulas (1) and (2), and at least one of R 15 to R 30 is described for R. And an alkyl group or a substituent having an alkyl group. However, in the compound of formula (8), R 18 and R 26 in R 15 to R 30 are the alkyl groups or the substituents having an alkyl group described in R of the above formulas (1) and (2), Others are preferably hydrogen. Further, the alkyl group or the substituent having an alkyl group is preferably a group having a linear alkyl group having 1 to 25 carbon atoms or a linear alkyl group having 1 to 25 carbon atoms, and having 5 to 20 carbon atoms. A straight-chain alkyl group or a group having a straight-chain alkyl group having 5 to 20 carbon atoms is more preferable, and a straight-chain alkyl group having 6 to 15 carbon atoms or a straight-chain alkyl group having 6 to 15 carbon atoms is used. More preferably.
In addition, the van der Waals volume ratio of the alkyl group or the alkyl portion to the entire conductive compound is preferably 5 to 80%, more preferably 25 to 60%, and further preferably 30 to 60%. ..
A conductive compound having such a structure as a basic skeleton is, for example, a structural phase transition in the case where an alkyl group or an alkyl moiety is a linear alkyl group having 6 to 15 carbon atoms or a linear alkyl moiety having 6 to 15 carbon atoms. Occurs in the temperature range of 100 to 140°C. Therefore, for example, when it is expected to be used at 80°C to 150°C, the alkyl group or the alkyl moiety may be a linear alkyl group having 6 to 15 carbon atoms or a linear alkyl moiety having 6 to 15 carbon atoms. preferable.
The compound of formula (8) can be produced, for example, by the method described in WO2008/050726, the contents of which are incorporated herein by reference.
(4)DCTT又はそれに類似する構造を基本骨格とする導電性化合物
式(9)中、X1及びX2は上記式(3)のYと同じであり、好ましくはS又はSeであり、特に好ましくはSである。R31乃至R46は、水素、又は上記式(1)及び(2)のRで説明したアルキル基又はアルキル基を有する置換基であり、R31乃至R46の少なくとも1つは、Rで説明したアルキル基又はアルキル基を有する置換基である。もっとも、式(9)の化合物では、R31乃至R46中、R34及びR41は、上記式(1)及び(2)のRで説明したアルキル基又はアルキル基を有する置換基であり、他は水素であることが好ましい。また、アルキル基又はアルキル基を有する置換基としては、炭素数1〜25の直鎖アルキル基又は炭素数1〜25の直鎖アルキル基を有する基であることが好ましく、炭素数5〜20の直鎖アルキル基又は炭素数5〜20の直鎖アルキル基を有する基であることがより好ましく、炭素数6〜15の直鎖アルキル基又は炭素数6〜15の直鎖アルキル基を有する基であることがより好ましい。
また、アルキル基又はアルキル部分の導電性化合物全体に対するファンデルワールス体積比は、5〜60%であることが好ましく、10〜50%であることがより好ましい。特に15〜50%であることが好ましい。
このような構造を基本骨格とする導電性化合物は、上述の通り、アルキル基又はアルキル部分の長さを調整することで、熱電変換材料の構造転移の温度の制御や熱運動の制御が可能と考えられ、例えば70℃〜150℃での使用が想定される場合には、アルキル基又はアルキル部分を炭素数6〜15の直鎖アルキル基又は炭素数6〜15の直鎖アルキル部分とすることが好ましい。
なお、式(9)の化合物は、例えばWO2008/050726に記載の方法で製造することができ、その内容を参照により本願明細書に組み込む。
(4) Conductive compound having DCTT or a structure similar thereto as a basic skeleton
In formula (9), X 1 and X 2 are the same as Y in formula (3) above, preferably S or Se, and particularly preferably S. R 31 to R 46 are hydrogen or an alkyl group or a substituent having an alkyl group described for R in the above formulas (1) and (2), and at least one of R 31 to R 46 is described for R. And an alkyl group or a substituent having an alkyl group. However, in the compound of the formula (9), R 34 and R 41 in R 31 to R 46 are the alkyl groups or the substituents having the alkyl group described in R of the above formulas (1) and (2), The other is preferably hydrogen. Further, the alkyl group or the substituent having an alkyl group is preferably a group having a linear alkyl group having 1 to 25 carbon atoms or a linear alkyl group having 1 to 25 carbon atoms, and having 5 to 20 carbon atoms. A straight-chain alkyl group or a group having a straight-chain alkyl group having 5 to 20 carbon atoms is more preferable, and a straight-chain alkyl group having 6 to 15 carbon atoms or a straight-chain alkyl group having 6 to 15 carbon atoms is used. More preferably.
Further, the van der Waals volume ratio of the alkyl group or the alkyl portion to the whole conductive compound is preferably 5 to 60%, more preferably 10 to 50%. It is particularly preferably 15 to 50%.
As described above, the conductive compound having such a structure as a basic skeleton can control the temperature of the structural transition and the thermal motion of the thermoelectric conversion material by adjusting the length of the alkyl group or the alkyl portion. It is conceivable that the alkyl group or the alkyl moiety is a straight-chain alkyl group having 6 to 15 carbon atoms or a straight-chain alkyl moiety having 6 to 15 carbon atoms, for example, when it is supposed to be used at 70°C to 150°C. Is preferred.
The compound of formula (9) can be produced, for example, by the method described in WO2008/050726, the contents of which are incorporated herein by reference.
本発明の有機熱電変換材料は、任意選択で、ドーパントを含んでもよい。ドーパントとしては、例えば、スルホニウム塩、ヨードニウム塩、アンモニウム塩、カルボニウム塩、ホスホニウム塩等のオニウム塩化合物;カンファースルホン酸、ドデシルベンゼンスルホン酸、2−ナフタレンスルホン酸、トルエンスルホン酸や、2−ナフタレンスルホン酸等の有機酸;Cl2、Br2、I2、ICl、ICl3、IBr、IF等のハロゲン;PF5、AsF5、SbF5、BF3、BCl3、BBr3、SO3等のルイス酸;HF、HCl、HNO3、H2SO4、HClO4、燐酸等のプロトン酸;FeCl3、FeOCl、TiCl4、ZrCl4、HfCl4、NbF5、NbCl5、TaCl5、MoF5、WF6等の遷移金属化合物、Li、Na、K、Rb、Cs等のアルカリ金属、Ca、Sr、Ba等のアルカリ土類金属、Eu等のランタノイド、その他R4N+、R4P+、R4As+、R3S+(R:アルキル基)、アセチルコリンなどを挙げることができる。 The organic thermoelectric conversion material of the present invention may optionally include a dopant. Examples of the dopant include onium salt compounds such as sulfonium salts, iodonium salts, ammonium salts, carbonium salts, and phosphonium salts; camphorsulfonic acid, dodecylbenzenesulfonic acid, 2-naphthalenesulfonic acid, toluenesulfonic acid, and 2-naphthalenesulfone. Organic acids such as acids; halogens such as Cl 2 , Br 2 , I 2 , ICl, ICl 3 , IBr and IF; Lewis such as PF 5 , AsF 5 , SbF 5 , BF 3 , BCl 3 , BBr 3 and SO 3 Acid; Protonic acid such as HF, HCl, HNO 3 , H 2 SO 4 , HClO 4 , phosphoric acid; FeCl 3 , FeOCl, TiCl 4 , ZrCl 4 , HfCl 4 , NbF 5 , NbCl 5 , TaCl 5 , MoF 5 , WF 6 and other transition metal compounds, Li, Na, K, Rb, Cs and other alkali metals, Ca, Sr, Ba and other alkaline earth metals, Eu and other lanthanoids, and other R 4 N + , R 4 P + , R 4 As + , R 3 S + (R: alkyl group), acetylcholine and the like can be mentioned.
本発明においては、ドーパントは必須成分ではなく、有機熱電変換材料中、0〜60重量%含有することが好ましく、0〜20重量%含有することがより好ましい。 In the present invention, the dopant is not an essential component and is preferably contained in the organic thermoelectric conversion material in an amount of 0 to 60% by weight, more preferably 0 to 20% by weight.
本発明の熱電変換材料は、高い熱起電力を備えており、有機熱電変換素子の熱電変換材料として有用である。このため、本発明の熱電変換材料は、有機熱電変換素子の熱電変換層を形成するために効果的に用いることができる。従って、本発明の他の実施形態によれば、本発明の熱電変換材料の熱電変換層を形成するための使用、熱電変換材料を含む熱電変換層を有する熱電変換素子、及び熱電変換材料を含む熱電変換層によって熱電変換させる方法も提供される。 The thermoelectric conversion material of the present invention has a high thermoelectromotive force and is useful as a thermoelectric conversion material for an organic thermoelectric conversion element. Therefore, the thermoelectric conversion material of the present invention can be effectively used for forming the thermoelectric conversion layer of the organic thermoelectric conversion element. Therefore, according to another embodiment of the present invention, the use of the thermoelectric conversion material of the present invention for forming a thermoelectric conversion layer, a thermoelectric conversion element having a thermoelectric conversion layer containing a thermoelectric conversion material, and a thermoelectric conversion material are included. There is also provided a method of thermoelectric conversion by a thermoelectric conversion layer.
本発明の熱電変換素子は、基材上に、第1の電極、熱電変換層および第2の電極を有し、熱電変換層は本発明の熱電変換材料を含有している。
本発明の熱電変換素子は、基材上に、第1の電極、熱電変換層および第2の電極を有するものであればよく、第1の電極および第2の電極と熱電変換層との位置関係等、その他の構成について特に限定されない。本発明の熱電変換素子において、熱電変換層は、その少なくとも一方の面に第1の電極および第2の電極に接するように配置されていればよい。基材に対して横方向に温度差がある場合が横型の熱電変換素子(図5)、基材に対して縦方向に温度差がある場合が縦型の熱電変換素子(図6)である。本発明の熱電変換素子における熱電変換層は、2つの電極に接するように配置されていればよく、この電極間に温度差を設けることにより起電力を発生する。
The thermoelectric conversion element of the present invention has a first electrode, a thermoelectric conversion layer and a second electrode on a base material, and the thermoelectric conversion layer contains the thermoelectric conversion material of the present invention.
The thermoelectric conversion element of the present invention only needs to have the first electrode, the thermoelectric conversion layer and the second electrode on the base material, and the positions of the first electrode and the second electrode and the thermoelectric conversion layer. Other configurations such as relationships are not particularly limited. In the thermoelectric conversion element of the present invention, the thermoelectric conversion layer may be arranged on at least one surface thereof so as to be in contact with the first electrode and the second electrode. A horizontal thermoelectric conversion element (FIG. 5) has a temperature difference in the horizontal direction with respect to the base material, and a vertical thermoelectric conversion element (FIG. 6) has a temperature difference in the vertical direction with respect to the base material. .. The thermoelectric conversion layer in the thermoelectric conversion element of the present invention has only to be arranged so as to be in contact with two electrodes, and an electromotive force is generated by providing a temperature difference between these electrodes.
基材としては、ガラス、金属、プラスチックフィルム、不織布、紙等の電極及び熱電変換材料を保持できるものが用いることができる。デバイスにフレキシビリティーを与えるため、フレキシブルなプラスチックフィルムなどを用いることが好ましい。 As the base material, those capable of holding electrodes and thermoelectric conversion materials such as glass, metal, plastic film, non-woven fabric and paper can be used. It is preferable to use a flexible plastic film or the like in order to give the device flexibility.
電極材料としてはITO等の透明電極、金、銀、銅、アルミニウム等の金属電極、カーボンナノチューブ、グラフェン等の炭素電極、PEDOT:PSS等の有機導電性材料などが挙げられ、熱電変換材料との接触抵抗の低い材料が好ましい。また熱電変換材料との接触抵抗を下げるためコンタクトドーピング等の処理をすることが可能である。 Examples of the electrode material include transparent electrodes such as ITO, metal electrodes such as gold, silver, copper, and aluminum, carbon electrodes such as carbon nanotubes and graphene, organic conductive materials such as PEDOT:PSS, and the like. Materials with low contact resistance are preferred. Further, in order to reduce the contact resistance with the thermoelectric conversion material, it is possible to perform processing such as contact doping.
本発明の熱電変換素子の熱電変換層は本発明の熱電変換材料を用いる。熱電変換層は1層でもよく、複数の層であってもよい。本発明の熱電変換素子が複数の熱電変換層を有する場合、本発明の熱電変換材料を用いて形成された熱電変換層のみを複数層有する素子であっても良いし、本発明の熱電変換材料を用いて形成された熱電変換層と、本発明の熱電変換材料以外の熱電変換材料を用いて形成された熱電変換層を有する素子であっても良い。本発明の熱電変換材料は、上述の通り、素子を使用する温度に応じて最も高い熱起電力を発揮するように設計することができるので、使用温度に応じて、置換基の分子設計を適宜変更することができる。 The thermoelectric conversion material of the present invention is used for the thermoelectric conversion layer of the thermoelectric conversion element of the present invention. The thermoelectric conversion layer may be a single layer or a plurality of layers. When the thermoelectric conversion element of the present invention has a plurality of thermoelectric conversion layers, it may be an element having only a plurality of thermoelectric conversion layers formed using the thermoelectric conversion material of the present invention, or the thermoelectric conversion material of the present invention. An element having a thermoelectric conversion layer formed by using and a thermoelectric conversion layer formed by using a thermoelectric conversion material other than the thermoelectric conversion material of the present invention may be used. As described above, the thermoelectric conversion material of the present invention can be designed so as to exhibit the highest thermoelectromotive force depending on the temperature at which the device is used. Can be changed.
本発明の熱電変換素子における熱電変換層等の製膜方法は特に限定されず、例えば、印刷などの溶液プロセスや真空プロセスなどの方法が挙げられる。デバイス製造コストを考慮すると溶液プロセスが好ましく、キャスティング、スピンコーティング、ディップコーティング、ブレードコーティング、ワイヤバーコーティング、スプレーコーティング等のコーティング法や、インクジェット印刷、スクリーン印刷、オフセット印刷、凸版印刷等の印刷法、ソフトリソグラフィー法等、さらにはこれらの手法を複数組み合わせた方法が挙げられる。 The method for forming the thermoelectric conversion layer and the like in the thermoelectric conversion element of the present invention is not particularly limited, and examples thereof include a solution process such as printing and a vacuum process. Solution process is preferable in consideration of device manufacturing cost, and coating methods such as casting, spin coating, dip coating, blade coating, wire bar coating, and spray coating, printing methods such as inkjet printing, screen printing, offset printing, letterpress printing, and the like, Further, a soft lithography method and the like, and a method combining a plurality of these methods can be mentioned.
上述の通り、本発明の熱電変換素子は、導電性化合物自体の高い熱起電力を通じて、高い熱電変換効率を達成することができ、高性能な有機熱電変換素子を提供する新たなアプローチを提供する。特に非常に高いゼーベック係数を有することから高電圧のデバイス設計が容易となり、特徴のある熱電変換素子を提供することが可能となる。 As described above, the thermoelectric conversion element of the present invention can achieve high thermoelectric conversion efficiency through high thermoelectromotive force of the conductive compound itself, and provides a new approach to provide a high-performance organic thermoelectric conversion element. .. In particular, since it has a very high Seebeck coefficient, it becomes easy to design a high-voltage device, and it becomes possible to provide a characteristic thermoelectric conversion element.
以下、実施例に基づき本発明をより詳しく説明する。しかし、以下の実施例は本発明の技術的範囲を何ら限定するものではない。 Hereinafter, the present invention will be described in more detail based on examples. However, the following examples do not limit the technical scope of the present invention in any way.
(合成例1)(6,20-Didodecyl-29H,3H-tetrabenzo[b,g,l,q] porphyrin)
アルゴン置換した反応容器にジピロメタン(0.30g,1.0mmol)を加え、ジクロロメタン(200ml)に溶解させた。ここにアルゴンガスを10分間バブリングした。ついでトリデカナール(0.3ml,1.1nnol)とトリフルオロ酢酸(TFA)(2滴)を順に加え、遮光下17時間撹拌した。ここに2,3−ジクロロ−5,6−ジシアノ−p−ベンゾキノン(DDQ)(0.35g)を加え、さらに2時間撹拌した。反応終了後、溶液が半量になるまで溶媒を除去し、アルミナカラムクロマトグラフィー(クロロホルム)を行った。さらにシリカゲルクロマトグラフィー(ジクロロメタン)及びGPCを用いて精製し、最後に再結晶(クロロホルム/メタノール)を行うことで、目的物を赤褐色個体として得た。収率:80%(389mg、0.405mmol) Dipyrromethane (0.30 g, 1.0 mmol) was added to the reaction vessel replaced with argon and dissolved in dichloromethane (200 ml). Argon gas was bubbled into this for 10 minutes. Then, tridecanal (0.3 ml, 1.1 nol) and trifluoroacetic acid (TFA) (2 drops) were sequentially added, and the mixture was stirred for 17 hours in the dark. 2,3-Dichloro-5,6-dicyano-p-benzoquinone (DDQ) (0.35 g) was added thereto, and the mixture was further stirred for 2 hours. After completion of the reaction, the solvent was removed until the solution became half volume, and alumina column chromatography (chloroform) was performed. The product was further purified by silica gel chromatography (dichloromethane) and GPC, and finally recrystallized (chloroform/methanol) to obtain the desired product as a reddish brown solid. Yield: 80% (389 mg, 0.405 mmol)
(合成例2) C12H25-H2BP
(Synthesis example 2) C 12 H 25 -H 2 BP
上記で得られたポルフィリンをガラスチューブオーブン中真空下、200℃で30分間加熱することによりベンゾポルフィリンが緑色個体として得られた。 The porphyrin obtained above was heated in a glass tube oven under vacuum at 200° C. for 30 minutes to obtain benzoporphyrin as a green solid.
図2に示す通り、DSC(170−570K)により、320−360Kにシャープなピークとブロードなピークが認められ、440K付近にピークが認められ、構造相転移を生じていることが示された。 As shown in FIG. 2, by DSC (170-570K), a sharp peak and a broad peak were recognized at 320-360K, and a peak was recognized at around 440K, indicating that structural phase transition occurred.
(合成例3)29H,3H-tetrabenzo[b,g,l,q] porphine(BP、LUMO:−2.26eV、HOMO:−4.69eV ALDRICH社製)。
図3に示す通り、DSC(170−570K)には、明確なピークが認められなかった。
(合成例4)C8BTBTの合成
(1)2,7-Di(1-octynyl1)[1]benzothieno[3,2-b][1]benzothiopheneの合成
(Synthesis example 3) 29H,3H-tetrabenzo[b,g,l,q] porphine (BP, LUMO: -2.26eV, HOMO: -4.69eV manufactured by ALDRICH).
As shown in FIG. 3, no clear peak was observed in DSC (170-570K).
(Synthesis Example 4) Synthesis of C8BTBT (1) Synthesis of 2,7-Di(1-octynyl1)[1]benzothieno[3,2-b][1]benzothiophene
窒素雰囲気下、2,7−ジヨードベンゾチエノベンゾチオフェン(1.0g,2.0mmol)を無水ジイソプロピルアミン(15ml)と無水ベンゼン(15ml)に溶解後、脱気を30分行った。10mol% PdCl2(PPh3)2(140mg)、20mol% CuI(76mg)、1−octyne(0.81ml,5.5mmol)を加え8時間室温で攪拌した。攪拌終了後、水(30ml)を加え、クロロホルム(30ml×3)で抽出した。抽出液を水(100ml×3)で洗浄後、無水硫酸マグネシウムで乾燥した。溶媒を減圧下で留去し、カラムクロマトグラフィー(シリカゲル、塩化メチレン:へキサン=1:3、Rf=0.6)により精製し、ヘキサンから再結晶することで上記式で表される目的化合物の無色板状晶を得た(収量710mg、収率77%)。 Under a nitrogen atmosphere, 2,7-diiodobenzothienobenzothiophene (1.0 g, 2.0 mmol) was dissolved in anhydrous diisopropylamine (15 ml) and anhydrous benzene (15 ml), and then degassing was performed for 30 minutes. 10 mol% PdCl2(PPh3)2 (140 mg), 20 mol% CuI (76 mg), and 1-octyne (0.81 ml, 5.5 mmol) were added, and the mixture was stirred at room temperature for 8 hours. After completion of stirring, water (30 ml) was added, and the mixture was extracted with chloroform (30 ml×3). The extract was washed with water (100 ml×3) and dried over anhydrous magnesium sulfate. The solvent was distilled off under reduced pressure, purified by column chromatography (silica gel, methylene chloride:hexane=1:3, Rf=0.6), and recrystallized from hexane to give the target compound represented by the above formula. Of colorless plate crystals were obtained (amount 710 mg, yield 77%).
(2) 2,7-Dioctyl[1]benzothieno[3,2-b][1]benzothiopheneの合成 (2) Synthesis of 2,7-Dioctyl[1]benzothieno[3,2-b][1]benzothiophene
得られた化合物(300mg,0.66mmol)、Pd/C(70mg)を無水トルエン(10mL)に加え、アスピレーターによる減圧−水素パージを数回繰り返した後、8時間攪拌した。反応終了後溶媒を留去し、カラムクロマトグラフィー(シリカゲル、へキサン、Rf=0.6)により精製し(収量286mg、収率94%)、ヘキサンから再結晶することで、目的化合物の無色粉末固体を得た(収量250mg、収率82%)。 The obtained compound (300 mg, 0.66 mmol) and Pd/C (70 mg) were added to anhydrous toluene (10 mL), and the pressure-hydrogen purge with an aspirator was repeated several times, followed by stirring for 8 hours. After completion of the reaction, the solvent was distilled off, and the residue was purified by column chromatography (silica gel, hexane, Rf=0.6) (yield 286 mg, 94%) and recrystallized from hexane to give the target compound as a colorless powder. A solid was obtained (yield amount 250 mg, yield 82%).
(実施例)
各実施例において、各化合物を用いた有機熱電変換素子を作製し、特性を評価した。評価装置として、自家製超高抵抗試料対応熱電特性評価装置を用いた。前記特性評価装置は、超高真空チャンバー中において、(1)クヌーセンセルによる昇華性材料の精密蒸着、(2)ケースレー6430ソースメーターを利用した1014Ω程度を上限とする試料抵抗測定、および、(3)自家製高入力インピーダンス差動増幅回路を利用した1013Ω程度の試料抵抗を上限とする高精度ゼーベック係数測定、を行う機能を有する。(非特許文献:中村, 応用物理 82 (2013) 954を参照)
(Example)
In each example, an organic thermoelectric conversion element using each compound was prepared and the characteristics were evaluated. As the evaluation device, a homemade ultrahigh resistance sample compatible thermoelectric property evaluation device was used. The characteristic evaluation device comprises: (1) precision vapor deposition of a sublimable material by a Knudsen cell in an ultra-high vacuum chamber; (2) sample resistance measurement using Keithley 6430 source meter up to about 10 14 Ω; and (3) It has a function to perform high-precision Seebeck coefficient measurement with a sample resistance of about 10 13 Ω as an upper limit using a homemade high input impedance differential amplifier circuit. (See Non-Patent Document: Nakamura, Applied Physics 82 (2013) 954).
(実施例1) 化合物(C12BP)を用いた熱電変換素子の作製・評価
本実施例において、合成例1で合成した化合物を用いた有機熱電変換素子を作製して、特性を評価した。
電極作製用シャドウマスクを取り付けた白板ガラスを真空蒸着装置内に設置し、装置内の真空度が1.0×10−4Pa以下になるまで排気した。抵抗加熱蒸着法によって、金を0.1Å/secの蒸着速度で30nmの厚さに蒸着し、電極付き基板を得た。
本基板にシャドウマスクを取り付けたうえで熱電対及び電極への配線を行い、前記特性評価装置内に設置し、装置内の真空度が1.0×10−4Pa以下になるまで排気し、抵抗加熱蒸着法によって、化合物(C12BP)の薄膜(160nm)を形成し、本発明の熱電変換素子(電極間の距離:10mm、電極の幅:7.6mm)を得た。
得られた熱電変換素子は、装置内の真空度が1.0×10−5Pa以下の条件で温度を定めて電圧を印加、電流値を読み取り、導電率を計測した。また電極間に温度勾配を設け、熱起電力値を読み取ることでゼーベック係数を測定した。
その結果、340Kでの導電率は3.0×10−8Scm−1であり、ゼーベック係数は123mV/Kであった。また、図1に示す通り、C12BPの側鎖のファンデルワールス体積比は50%(Winmostarソフトを使用した)であった。
(Example 1) Production/Evaluation of Thermoelectric Conversion Element Using Compound (C12BP) In this example, an organic thermoelectric conversion element using the compound synthesized in Synthesis Example 1 was produced to evaluate the characteristics.
A white glass plate with a shadow mask for producing electrodes was placed in a vacuum vapor deposition apparatus, and the apparatus was evacuated until the degree of vacuum in the apparatus became 1.0×10 −4 Pa or less. Gold was vapor-deposited at a thickness of 30 nm at a vapor deposition rate of 0.1 Å/sec by a resistance heating vapor deposition method to obtain a substrate with electrodes.
After mounting a shadow mask on the substrate, wiring to the thermocouple and the electrodes is performed, the device is installed in the characteristic evaluation device, and the device is evacuated until the degree of vacuum in the device becomes 1.0×10 −4 Pa or less, A thin film (160 nm) of the compound (C12BP) was formed by a resistance heating vapor deposition method to obtain a thermoelectric conversion element of the present invention (distance between electrodes: 10 mm, width of electrode: 7.6 mm).
Regarding the obtained thermoelectric conversion element, the temperature was determined under the condition that the degree of vacuum in the apparatus was 1.0×10 −5 Pa or less, a voltage was applied, a current value was read, and the conductivity was measured. The Seebeck coefficient was measured by providing a temperature gradient between the electrodes and reading the thermoelectromotive force value.
As a result, the conductivity at 340K was 3.0×10 −8 Scm −1 , and the Seebeck coefficient was 123 mV/K. In addition, as shown in FIG. 1, the van der Waals volume ratio of the side chain of C12BP was 50% (using Winmostar software).
(実施例2) 化合物(C8−BTBT)を用いた熱電変換素子の作製・評価
実施例1で用いた化合物の代わりに合成例2で合成した化合物(C8−BTBT)を用いて有機熱電変換素子を作製し、評価した。
白板ガラス基板に0.5wt%C8−BTBTのヘプタン溶液を滴下、スピンコート(1000rpm×1min)製膜し、乾燥して有機薄膜(30nm)基板を得た。この有機薄膜基板に電極形成用シャドウマスクを取り付け、真空蒸着装置内に設置し、装置内の真空度が1.0×10−4Pa以下になるまで排気した。抵抗加熱蒸着法によって、金を0.1Å/secの蒸着速度で30nmの厚さに蒸着し、熱電変換素子(電極間の距離:5mm、電極の幅:7.6mm)を得た。
本素子に熱電対及び電極への配線を行い、前記評価装置内に設置し、装置内の真空度が1.0×10−5Pa以下の条件で温度を定めて電圧を印加、電流値を読み取り、導電率を計測した。また電極間に温度勾配を設け、熱起電力値を読み取ることでゼーベック係数を測定した。
その結果、340Kでの導電率は2.1×10−8Scm−1であり、ゼーベック係数は190mV/Kであった。
(Example 2) Production and evaluation of thermoelectric conversion element using compound (C8-BTBT) Organic thermoelectric conversion element using compound (C8-BTBT) synthesized in Synthesis Example 2 instead of the compound used in Example 1 Was prepared and evaluated.
A 0.5 wt% C8-BTBT heptane solution was dropped on a white glass substrate, spin-coated (1000 rpm×1 min) to form a film, and dried to obtain an organic thin film (30 nm) substrate. A shadow mask for electrode formation was attached to the organic thin film substrate, the shadow mask was placed in a vacuum vapor deposition apparatus, and the apparatus was evacuated until the degree of vacuum in the apparatus became 1.0×10 −4 Pa or less. Gold was vapor-deposited by a resistance heating vapor deposition method at a vapor deposition rate of 0.1 Å/sec to a thickness of 30 nm to obtain a thermoelectric conversion element (distance between electrodes: 5 mm, width of electrode: 7.6 mm).
Wiring to the thermocouple and electrodes to this element, installed in the evaluation device, the temperature was determined under the condition that the degree of vacuum in the device was 1.0×10 −5 Pa or less, the voltage was applied, and the current value was read. , The conductivity was measured. The Seebeck coefficient was measured by providing a temperature gradient between the electrodes and reading the thermoelectromotive force value.
As a result, the conductivity at 340K was 2.1×10 -8 Scm -1, and the Seebeck coefficient was 190 mV/K.
実施例2で得られた(C8−BTBT)では、DSC(170−570K)により、380K付近に2本と400Kにシャープなピークが認められ構造相転移を生じていることが示された。
また、図1に示す通り、C8BTBTの側鎖のファンデルワールス体積比は60%であった。
In (C8-BTBT) obtained in Example 2, DSC (170-570K) showed two sharp peaks near 380K and a sharp peak at 400K, indicating that structural phase transition occurred.
Further, as shown in FIG. 1, the van der Waals volume ratio of the side chain of C8BTBT was 60%.
(実施例3) 化合物(C10DNTT)を用いた熱電変換素子の作製・評価
実施例1にて用いた化合物の代わりに化合物(C10DNTT)を用いて有機熱電変換素子を作製し、評価した。
電極作製用シャドウマスクを取り付けた白板ガラスを真空蒸着装置内に設置し、装置内の真空度が1.0×10−4Pa以下になるまで排気した。抵抗加熱蒸着法によって、金を0.1Å/secの蒸着速度で30nmの厚さに蒸着し、電極付き基板を得た。
本基板にシャドウマスクを取り付けたうえで熱電対及び電極へ配線を行い、前記評価装置内に設置し、装置内の真空度が1.0×10−4Pa以下になるまで排気し、抵抗加熱蒸着法によって、0.5Å/secの蒸着速度で化合物(C10DNTT)の薄膜(20nm)を形成し、本発明の熱電変換素子(電極間の距離:5mm、電極の幅:7.6mm)を得た。
得られた熱電変換素子は、装置内の真空度が1.0×10−5Pa以下の条件で温度を定めて電圧を印加、電流値を読み取り、導電率を計測した。また電極間に温度勾配を設け、熱起電力値を読み取ることでゼーベック係数を測定した。
その結果、315Kでの導電率は1.1×10−7Scm−1であり、ゼーベック係数は128mV/Kであった。
また、図1に示す通り、C10DNTTの側鎖のファンデルワールス体積比は57%であった。図4に示す通り、実施例1で得られたC10DNTTでは、DSC(170−620K)により、390K、500K、570K及び580Kにそれぞれシャープなピークが認められ、構造相転移を生じていることが示された。
(Example 3) Production and evaluation of thermoelectric conversion element using compound (C10DNTT) An organic thermoelectric conversion element was produced using the compound (C10DNTT) instead of the compound used in Example 1 and evaluated.
A white glass plate with a shadow mask for producing electrodes was placed in a vacuum vapor deposition apparatus, and the apparatus was evacuated until the degree of vacuum in the apparatus became 1.0×10 −4 Pa or less. Gold was vapor-deposited at a thickness of 30 nm at a vapor deposition rate of 0.1 Å/sec by a resistance heating vapor deposition method to obtain a substrate with electrodes.
After attaching a shadow mask to this substrate, wiring to the thermocouple and electrodes, installing in the evaluation device, exhausting until the degree of vacuum in the device is 1.0 × 10 -4 Pa or less, resistance heating A thin film (20 nm) of a compound (C10DNTT) is formed by a vapor deposition method at a vapor deposition rate of 0.5 Å/sec to obtain a thermoelectric conversion element of the present invention (distance between electrodes: 5 mm, width of electrode: 7.6 mm). It was
Regarding the obtained thermoelectric conversion element, the temperature was determined under the condition that the degree of vacuum in the apparatus was 1.0×10 −5 Pa or less, a voltage was applied, a current value was read, and the conductivity was measured. The Seebeck coefficient was measured by providing a temperature gradient between the electrodes and reading the thermoelectromotive force value.
As a result, the conductivity at 315K was 1.1×10 −7 Scm −1 , and the Seebeck coefficient was 128 mV/K.
Moreover, as shown in FIG. 1, the van der Waals volume ratio of the side chains of C10DNTT was 57%. As shown in FIG. 4, in C10DNTT obtained in Example 1, sharp peaks were observed at 390K, 500K, 570K, and 580K by DSC (170-620K), indicating that structural phase transition occurred. Was done.
(実施例4) 化合物(C8−BTBT)を用いた縦型熱電変換素子の作製・評価
合成例2で合成した化合物 (C8−BTBT)を用いて縦型有機熱電変換素子を作製し、評価した。
ITOガラス基板(旭硝子製)にPEDOT/PSSをスピンコート(7000rpm×20sec)製膜、乾燥し基板を作製した。
作製した基板2枚でハイミラン(50μm 三井デュポンポリケミカル製)を挟み、150℃で加熱することにより25μmの隙間を持つ基板対を作製した。
作製した基板対に130℃で溶融した化合物 (C8BTBT)を注入し、熱電変換素子(電極間距離:25μm,電極サイズ100mm2)を得た。
得られた熱電変換素子のITO面に配線を行い、電極間に温度勾配を設けることにより、熱起電力が生じたことを確認した。
(Example 4) Production and evaluation of vertical thermoelectric conversion element using compound (C8-BTBT) Vertical organic thermoelectric conversion element was produced using the compound (C8-BTBT) synthesized in Synthesis Example 2 and evaluated. ..
An ITO glass substrate (manufactured by Asahi Glass) was spin-coated (7000 rpm×20 sec) into a film and dried to prepare a substrate.
Himiran (50 μm manufactured by Mitsui DuPont Polychemical) was sandwiched between the two produced substrates and heated at 150° C. to produce a substrate pair having a gap of 25 μm.
The compound (C8BTBT) melted at 130° C. was injected into the manufactured substrate pair to obtain a thermoelectric conversion element (distance between electrodes: 25 μm, electrode size 100 mm2).
It was confirmed that thermoelectromotive force was generated by wiring the ITO surface of the obtained thermoelectric conversion element and providing a temperature gradient between the electrodes.
(実施例5)
実施例1で作製した熱電変換素子(C12BP)において、温度(27〜127℃)を変えて導電率とゼーベック係数を測定し、パワーファクターを算出した。図7に27〜227℃までのバルクのC12BPのDSCの分析データと27℃を基準としたパワーファクターの相対値(27〜127℃)を示した。
この結果よると、材料の構造相転移がみられる温度(80〜90℃)の近傍に大きなパワーファクターを示していることが確認できる。このことによりこの熱電変換素子では、70℃〜100℃、より好ましくは80〜90℃で使用することで、効率的な熱電変換を実施できることがわかる。従って、本発明熱電変換素子では、各熱電変換材料に応じて、最適な使用温度を選択することで非常に効率的な熱電変換が可能となることが示された。
(Example 5)
In the thermoelectric conversion element (C12BP) produced in Example 1, the electric conductivity and the Seebeck coefficient were measured while changing the temperature (27 to 127° C.), and the power factor was calculated. FIG. 7 shows the DSC analysis data of bulk C12BP up to 27 to 227° C. and the relative value (27 to 127° C.) of the power factor based on 27° C.
From this result, it can be confirmed that a large power factor is shown in the vicinity of the temperature (80 to 90° C.) at which the structural phase transition of the material is observed. This shows that this thermoelectric conversion element can perform efficient thermoelectric conversion by using at 70 to 100°C, more preferably at 80 to 90°C. Therefore, in the thermoelectric conversion element of the present invention, it was shown that extremely efficient thermoelectric conversion can be performed by selecting the optimum use temperature according to each thermoelectric conversion material.
(比較例1)
実施例3と同様に、化合物をC10DNTTではなく、DNTTを用いて、同様な素子を作製した。その結果、360Kでの導電率は8.3×10−9Scm−1であり、ゼーベック係数は35mV/Kであった。
比較例1で得られたDNTTでは、DSC(170−570K)によりピークは認められなかった。
(Comparative Example 1)
Similar to Example 3, a similar device was prepared by using DNTT as the compound instead of C10DNTT. As a result, the conductivity at 360 K was 8.3×10 −9 Scm −1 , and the Seebeck coefficient was 35 mV/K.
In DNTT obtained in Comparative Example 1, no peak was observed due to DSC (170-570K).
(比較例2)
実施例3と同様に、化合物をC10DNTTではなく、ペンタセンを用いて、同様な素子を作製した。その結果、300Kでの導電率は1.3×10−6Scm−1であり、ゼーベック係数は2.4mV/Kであった。
(Comparative example 2)
Similar to Example 3, a similar device was prepared by using pentacene as the compound instead of C10DNTT. As a result, the conductivity at 300 K was 1.3×10 −6 Scm −1 , and the Seebeck coefficient was 2.4 mV/K.
スマートハウスやスマートビルディングのためのセンサマトリックスを形成するための分散電源及びエナジー・ハーベスティング素子として、住宅、オフィス、自動車における排出熱エネルギーの再利用において有用である。また、有機熱電変換材料の特徴である柔軟性を活かしてステッカー型の生体情報計測器(体温、脈拍、心電モニターなど)の電源として利用することもできる。特に非常に高いゼーベック係数を有することから高電圧のデバイス設計が容易となり、特徴のある熱電変換素子を提供することが可能となる。
It is useful as a distributed power source and energy harvesting device to form a sensor matrix for smart houses and smart buildings in the reuse of exhaust heat energy in homes, offices, and automobiles. Further, it can be used as a power source of a sticker type biological information measuring instrument (body temperature, pulse, electrocardiographic monitor, etc.) by utilizing the flexibility which is a characteristic of the organic thermoelectric conversion material. In particular, since it has a very high Seebeck coefficient, it becomes easy to design a high-voltage device, and it becomes possible to provide a characteristic thermoelectric conversion element.
Claims (4)
DSCにより−50℃〜200℃の範囲の温度に構造相転移が測定される導電性化合物を選択することを特徴とする、方法。 A method for producing an organic thermoelectric conversion material, using a conductive skeleton having a basic skeleton composed of a polycyclic aromatic ring having carrier transport properties, and an alkyl group or a substituent having an alkyl group,
A method comprising selecting a conductive compound whose structural phase transition is measured by DSC at a temperature in the range of -50°C to 200°C.
DSCにより−50℃〜200℃の範囲の温度に構造相転移が測定される該導電性化合
物を選択することを特徴とする、方法。 A method for improving the Seebeck coefficient of an organic thermoelectric conversion material containing a conductive skeleton having a basic skeleton composed of a polycyclic aromatic ring having carrier transport properties, and a substituent having an alkyl group or an alkyl group,
A method, characterized in that the electrically conductive compound is selected whose structural phase transition is measured by DSC at a temperature in the range of -50°C to 200°C.
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