JP2019096892A - Thermoelectric conversion material and thermoelectric conversion device - Google Patents
Thermoelectric conversion material and thermoelectric conversion device Download PDFInfo
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- JP2019096892A JP2019096892A JP2019009911A JP2019009911A JP2019096892A JP 2019096892 A JP2019096892 A JP 2019096892A JP 2019009911 A JP2019009911 A JP 2019009911A JP 2019009911 A JP2019009911 A JP 2019009911A JP 2019096892 A JP2019096892 A JP 2019096892A
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- thermoelectric conversion
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 146
- 239000000463 material Substances 0.000 title claims abstract description 76
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 193
- 150000001875 compounds Chemical class 0.000 claims abstract description 96
- 125000001424 substituent group Chemical group 0.000 claims abstract description 69
- 125000003118 aryl group Chemical group 0.000 claims abstract description 39
- 230000007704 transition Effects 0.000 claims abstract description 33
- 125000003367 polycyclic group Chemical group 0.000 claims abstract description 29
- 238000000034 method Methods 0.000 claims abstract description 25
- 230000001747 exhibiting effect Effects 0.000 abstract description 3
- 125000004432 carbon atom Chemical group C* 0.000 description 56
- -1 polyphenylene vinylene Polymers 0.000 description 47
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- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 13
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- 238000013461 design Methods 0.000 description 10
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- 125000004076 pyridyl group Chemical group 0.000 description 6
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 125000003545 alkoxy group Chemical group 0.000 description 4
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
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- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- SLGBZMMZGDRARJ-UHFFFAOYSA-N Triphenylene Natural products C1=CC=C2C3=CC=CC=C3C3=CC=CC=C3C2=C1 SLGBZMMZGDRARJ-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 150000007513 acids Chemical class 0.000 description 3
- 125000002252 acyl group Chemical group 0.000 description 3
- 125000005377 alkyl thioxy group Chemical group 0.000 description 3
- 125000003277 amino group Chemical group 0.000 description 3
- 125000006615 aromatic heterocyclic group Chemical group 0.000 description 3
- 125000003917 carbamoyl group Chemical group [H]N([H])C(*)=O 0.000 description 3
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- 238000004440 column chromatography Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
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- 125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 3
- UAOMVDZJSHZZME-UHFFFAOYSA-N diisopropylamine Chemical compound CC(C)NC(C)C UAOMVDZJSHZZME-UHFFFAOYSA-N 0.000 description 3
- 125000003438 dodecyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 3
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- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 3
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- 125000001421 myristyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 3
- 125000001400 nonyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 3
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- WROMPOXWARCANT-UHFFFAOYSA-N tfa trifluoroacetic acid Chemical compound OC(=O)C(F)(F)F.OC(=O)C(F)(F)F WROMPOXWARCANT-UHFFFAOYSA-N 0.000 description 1
- VJYJJHQEVLEOFL-UHFFFAOYSA-N thieno[3,2-b]thiophene Chemical compound S1C=CC2=C1C=CS2 VJYJJHQEVLEOFL-UHFFFAOYSA-N 0.000 description 1
- 125000002813 thiocarbonyl group Chemical group *C(*)=S 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 150000003623 transition metal compounds Chemical class 0.000 description 1
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- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/856—Thermoelectric active materials comprising organic compositions
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- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D487/00—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, not provided for by groups C07D451/00 - C07D477/00
- C07D487/22—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, not provided for by groups C07D451/00 - C07D477/00 in which the condensed system contains four or more hetero rings
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- C07D491/22—Heterocyclic compounds containing in the condensed ring system both one or more rings having oxygen atoms as the only ring hetero atoms and one or more rings having nitrogen atoms as the only ring hetero atoms, not provided for by groups C07D451/00 - C07D459/00, C07D463/00, C07D477/00 or C07D489/00 in which the condensed system contains four or more hetero rings
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D495/00—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms
- C07D495/22—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms in which the condensed system contains four or more hetero rings
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- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
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Abstract
Description
本発明は、有機熱電変換材料及び当該材料を用いて作製される熱電変換素子に関する。 The present invention relates to an organic thermoelectric conversion material and a thermoelectric conversion element manufactured using the material.
近年、環境中の未利用熱エネルギーを電気エネルギーとして回収するための手段として熱電変換素子に対する注目が高まっている。 In recent years, attention has been focused on thermoelectric conversion elements as means for recovering unused thermal energy in the environment as electrical energy.
従来、熱電変換材料としては、熱電変換効率が比較的高いことから、主にCoSb3等の無機半導体材料が使用、研究されていたが、このような無機半導体材料は、希少元素を含み高価であると共に、材料の加工性に乏しいという問題がある。このため、近年においては、安価であって材料の加工性に優れる有機熱電変換材料の研究が盛んに行われている。 Conventionally, as a thermoelectric conversion material, inorganic semiconductor materials such as CoSb 3 have been mainly used and studied because of relatively high thermoelectric conversion efficiency, but such inorganic semiconductor materials contain rare elements and are expensive There is a problem that the processability of the material is poor. For this reason, in recent years, research on organic thermoelectric conversion materials which are inexpensive and excellent in material processability has been actively conducted.
従来の有機熱電変換材料としては、ポリアニリン(特許文献1、3、4、5及び7)、ポリフェニレンビニレン(特許文献2)、ポリチエニレンビニレン(特許文献2)、ポリピロール(特許文献4)といった導電性高分子からなるものが提案されている。 Conducting materials such as polyaniline (patent documents 1, 3, 4, 5 and 7), polyphenylene vinylene (patent document 2), polythienylene vinylene (patent document 2) and polypyrrole (patent document 4) as conventional organic thermoelectric conversion materials It has been proposed to consist of a sex polymer.
しかしながら、これら導電性高分子は、熱電変換性能が十分ではなく、実用化のためにより高い熱電変換性能が求められている。このような熱電変換材料の熱電変換効率を高めるといった要求に対しては、従来、ドーパントを導入したり(特許文献2、3、4、5及び6)、ドーピングされた導電性高分子からなる層とドーピングされていない導電性高分子からなる層とを積層したり(特許文献4)、金属粒子を分散したり(特許文献1)、導電性高分子の分子軌道のエネルギー準位に対して特定のエネルギー準位差の分子軌道を持った熱励起アシスト剤を含有させる(特許文献7)ことが提案されている。 However, these conductive polymers do not have sufficient thermoelectric conversion performance, and higher thermoelectric conversion performance is required for practical use. In order to meet the demand for enhancing the thermoelectric conversion efficiency of such thermoelectric conversion materials, conventionally, a dopant is introduced (Patent Documents 2, 3, 4, 5 and 6), and a layer made of a doped conductive polymer And a layer made of a conductive polymer which is not doped (Patent Document 4), dispersed metal particles (Patent Document 1), and specific to the energy level of the molecular orbital of the conductive polymer. It has been proposed to contain a thermal excitation assist agent having a molecular orbital with an energy level difference of (Patent Document 7).
ところで、熱電変換材料の熱電変換効率は、一般に下記式
[数1]無次元性能指数ZT=S2・σ・T/κ (A)
[式中、S(V/K)は熱起電力(ゼーベック係数)を表し、σ(S/m)は導電率を表し、κ(W/mK)は熱伝導率を表し、T(K)は絶対温度を表し、S2・σはパワーファクターを表す。]
で表される無次元性能指数(ZT)を指標とする。上記式から理解できる通り、無次元性能指数(ZT)は、ゼーベック係数及び導電率が大きく、熱伝導率が低い程高くなり、熱電変換性能が高いことを意味する。高いZTを得られる材料のうち、特にゼーベック係数が大きな材料は、有機熱電変換材料を用いるフレキシブル熱電変換素子において、素子の厚みを薄くすることや、多数セルの直列接続数を減らして断線による動作不良を低減することを可能にする。
By the way, the thermoelectric conversion efficiency of the thermoelectric conversion material is generally expressed by the following equation [Equation 1] non-dimensional performance index ZT = S 2 · σ · T / κ (A)
[Wherein, S (V / K) represents a thermoelectromotive force (Seebeck coefficient), σ (S / m) represents conductivity, κ (W / mK) represents thermal conductivity, and T (K) Represents an absolute temperature, and S 2 · σ represents a power factor. ]
The dimensionless performance index (ZT) represented by is used as an index. As can be understood from the above equation, the dimensionless figure of merit (ZT) means that the higher the Seebeck coefficient and the conductivity and the lower the thermal conductivity, the higher the thermoelectric conversion performance. Among the materials that can obtain high ZT, especially for materials with large Seebeck coefficients, flexible thermoelectric conversion elements that use organic thermoelectric conversion materials can be operated by breaking the element thickness or reducing the number of series connections of multiple cells. It is possible to reduce defects.
この点、上述のドーパントの導入や金属粒子の分散は、主に導電率の増大によって熱電変換効率を向上しようとするものである。従来の非縮退半導体に対する熱電理論によれば、ゼーベック係数と導電率は一定のトレードオフ関係にあり、ゼーベック係数は、キャリア密度が小さいときに最大値を示し、キャリア密度が増大するにつれ小さくなるとされ(非特許文献2)、従来の導電性高分子では、最大値でもゼーベック係数は数mV/K程度であった。 In this respect, the introduction of the above-mentioned dopant and the dispersion of the metal particles are intended to improve the thermoelectric conversion efficiency mainly by the increase of the conductivity. According to the conventional thermoelectric theory for non-degenerate semiconductors, the Seebeck coefficient and the conductivity are in a constant trade-off relationship, and the Seebeck coefficient exhibits the maximum value when the carrier density is small, and decreases as the carrier density increases. (Non-patent document 2), in the case of the conventional conductive polymer, the Seebeck coefficient was about several mV / K even at the maximum value.
これに対して、上述の熱励起アシスト剤を含有させる試みは、熱起電力(ゼーベック係数)を高めることで、熱電変換効率を向上するものである。しかし、導電性高分子自体を改良して熱起電力(ゼーベック係数)を高めるものではない。 On the other hand, the above-described attempts to contain the thermal excitation assist agent improve the thermoelectric conversion efficiency by increasing the thermoelectromotive force (Seebeck coefficient). However, the conductive polymer itself is not improved to increase the thermoelectromotive force (Seebeck coefficient).
また、shimadaらは、有機半導体で低温において深いトラップが突然生じることに着目し、低分子半導体であるペンタセンについて点欠陥によって低温においてゼーベック係数が大きくなることを予想している(非特許文献4)。しかし、shimadaらの示したゼーベック係数は、1mV/K程度であり、しかも分子の熱運動による直接的なゼーベック係数の向上とそのための分子設計に対する何らの教示を与えるものでもない。 Moreover, shimada et al. Pay attention to the sudden generation of deep traps at low temperatures in organic semiconductors, and predicts that the Seebeck coefficient becomes large at low temperatures due to point defects in pentacene which is a low molecular weight semiconductor (Non-Patent Document 4) . However, the Seebeck coefficient described by shimada et al. Is about 1 mV / K, and does not provide any direct improvement in the Seebeck coefficient due to the thermal motion of the molecule and any teaching for the molecular design therefor.
本発明は、従来の有機熱電変換材料に比べ格段に大きなゼーベック係数を示す有機熱電変換材料を提供することを課題とする。 An object of the present invention is to provide an organic thermoelectric conversion material that exhibits a significantly higher Seebeck coefficient than conventional organic thermoelectric conversion materials.
本発明者らは、上記課題に鑑み、従来の半導体における熱電理論に囚われずに優れた熱電変換効率を達成する導電性化合物の分子設計を検討したところ、基本骨格については、平面π共役構造を有し一般にキャリア輸送能の高い多環芳香族化合物に由来する構造とし、その一方で、所定の温度で熱運動する側鎖を有する化合物としたところ、従来の熱電理論からは想定し得ない格段に高いゼーベック係数を奏することを見出した。本発明はこのような知見に基づくものである。 In view of the above problems, the present inventors examined molecular design of a conductive compound that achieves excellent thermoelectric conversion efficiency regardless of the conventional thermoelectric theory. According to the basic skeleton, the plane π conjugated structure In general, when the compound has a structure derived from a polycyclic aromatic compound having a high carrier-transporting ability, and a compound having a side chain thermally moving at a predetermined temperature, it can not be predicted from the conventional thermoelectric theory. Found a high Seebeck coefficient. The present invention is based on such findings.
すなわち、本発明は、以下の有機熱電変換材料及び有機熱電変換素子を提供する。
[1] キャリア輸送特性を有する多環芳香族環からなる基本骨格に、熱運動により基本骨格の分子間距離や分子パッキング構造の変化を引き起こすアルキル基を含む置換基が結合した導電性化合物を含む、有機熱電変換材料。
[2] キャリア輸送特性を有する多環芳香族環からなる基本骨格に、アルキル基またはアルキル基を有する置換基が結合し、−50℃〜200℃の範囲の温度で構造相転移(DSCにより特定される)する導電性化合物を含む、[1]に記載の有機熱電変換材料。
[3] 前記導電性化合物が下記一般式(1)で表されることを特徴とする、[1]又は[2]に記載の有機熱電変換材料。
(式中、Xはキャリア輸送特性を有する多環芳香族環を表し、nは1以上の整数を表す。nが2以上の場合には、各Xは異なる多環芳香族環であってもよい。Rはそれぞれ独立してアルキル基又はアルキル基を有する置換基を表す。mはRがXに結合可能な最大数以下の数を表わし、通常1〜8の整数を表す。)
[4] 前記導電性化合物が下記一般式(2)で表されることを特徴とする、[1]〜[3]のいずれかに記載の有機熱電変換材料。
(式中、Xはキャリア輸送特性を有する多環芳香族環を表し、Rはそれぞれ独立してアルキル基又はアルキル基を有する置換基を表す。mはRがXに結合可能な最大数以下の数を表わし、通常1〜8の整数を表す。)
[5] 前記導電性化合物中における前記置換基が占めるファンデルワールス体積比が5〜80%である、[1]〜[4]のいずれかに記載の有機熱電変換材料。
[6] 前記導電性化合物のDSCによる構造相転移点が、0〜180℃の範囲の温度で認められる、[1]〜[5]のいずれかに記載の有機熱電変換材料。
[7] 前記多環芳香族環は、多環芳香族芳香族炭化水素又は多環芳香族複素環である[1]〜[6]のいずれかに記載の有機熱電変換材料。
[8] 前記多環芳香族複素環が、ヘテロアセン又はポリへテロアセンである、[1]〜[7]のいずれかに記載の有機熱電変換材料。
[9] 前記多環芳香族複素環が、ポルフィリン又はポルフィラジンである、[1]〜[7]に記載の有機熱電変換材料。
[10] 前記多環芳香族複素環が、式(3)、(4)又は(5)で表される化合物である、[1]〜[9]のいずれかに記載の有機熱電変換材料。
(式中Yは、それぞれ独立してS、Se、SO2、O、N(R51)又はSi(R1)(R52)を表し、R51及びR52はそれぞれ独立して水素原子、アリール基、単環式芳香族複素環残基;アルキル基又は芳香族環残基で置換されたアミノ基、アルキルオキシ基、アルキルチオキシ基、エステル基、カルバモイル基、アセトアミド、チオ基又はアシル基を表し、Yはそれぞれ異なっていてもよい。Z1及びZ2はそれぞれ独立して水素原子、芳香族炭化水素又は芳香族複素環を表す。Z1及びZ2は同じでも異なっても良い。)
(式(4)及び(5)中、Wはそれぞれ独立してN又はC−を表し、少なくとも1つはC−であり、アルキル基又はアルキル基を含む置換基が結合しており、Zはそれぞれ独立して水素原子、芳香族炭化水素又は芳香族複素環を表し、同じでも異なっても良い。Mは金属原子を表す。)
[11] 前記導電性化合物が、式(6)、(7)、(10)、(11)、(12)又は(13)で表される化合物である、[1]〜[10]のいずれかに記載の有機熱電変換材料。
式(6)及び(7)中、X1及びX2は上記式(3)のYと同じであり、式(6)、(7)、(10)、(11)、(12)及び(13)中、R1及びR2の少なくとも1つ、典型的には両方、R3乃至R14の少なくとも1つ、並びにR47乃至R50は上記式(1)のRと同じであり、m1乃至m4は上記式(1)のmと同じであり、R47乃至R49は、1つ以上のWに結合しており、R50は、基本骨格の結合可能な位置に結合できるが、好ましくは1つ以上のWに結合している。
[12] [1]〜[11]のいずれかに記載の熱電変換材料を含む熱電変換層を有する有機熱電変換素子。
[13] [1]〜[11]のいずれかに記載の熱電変換材料を含む熱電変換層を有する横型または縦型の有機熱電変換素子。
That is, the present invention provides the following organic thermoelectric conversion material and organic thermoelectric conversion element.
[1] A conductive compound comprising an alkyl group-containing substituent that causes a change in intermolecular distance and molecular packing structure of the basic skeleton by thermal motion to a basic skeleton consisting of polycyclic aromatic rings having carrier transport properties. , Organic thermoelectric conversion material.
[2] An alkyl group or a substituent having an alkyl group is bonded to a basic skeleton consisting of polycyclic aromatic rings having carrier transport properties, and a structural phase transition (specified by DSC at a temperature in the range of -50 ° C to 200 ° C) The organic thermoelectric conversion material as described in [1] which contains the electroconductive compound to be.
[3] The organic thermoelectric conversion material according to [1] or [2], wherein the conductive compound is represented by the following general formula (1).
(Wherein, X represents a polycyclic aromatic ring having a carrier transport property, and n represents an integer of 1 or more. When n is 2 or more, each X may be a different polycyclic aromatic ring R independently represents an alkyl group or a substituent having an alkyl group, m represents a number equal to or less than the maximum number of R that can be bonded to X, and usually represents an integer of 1 to 8.)
[4] The organic thermoelectric conversion material according to any one of [1] to [3], wherein the conductive compound is represented by the following general formula (2).
(Wherein, X represents a polycyclic aromatic ring having a carrier transport property, and R each independently represents an alkyl group or a substituent having an alkyl group. M is less than or equal to the maximum number of R that can be bonded to X Represents a number, usually an integer from 1 to 8)
[5] The organic thermoelectric conversion material according to any one of [1] to [4], wherein the van der Waals volume ratio occupied by the substituent in the conductive compound is 5 to 80%.
[6] The organic thermoelectric conversion material according to any one of [1] to [5], wherein the structural phase transition point of the conductive compound by DSC is observed at a temperature in the range of 0 to 180 ° C.
[7] The organic thermoelectric conversion material according to any one of [1] to [6], wherein the polycyclic aromatic ring is a polycyclic aromatic aromatic hydrocarbon or a polycyclic aromatic heterocyclic ring.
[8] The organic thermoelectric conversion material according to any one of [1] to [7], wherein the polycyclic aromatic heterocycle is heteroacene or polyheteroacene.
[9] The organic thermoelectric conversion material according to [1] to [7], wherein the polycyclic aromatic heterocyclic ring is porphyrin or porphyrazine.
[10] The organic thermoelectric conversion material according to any one of [1] to [9], wherein the polycyclic aromatic heterocycle is a compound represented by Formula (3), (4) or (5).
(Wherein Y independently represents S, Se, SO 2 , O, N (R 51 ) or Si (R 1 ) (R 52 ), and R 51 and R 52 each independently represent a hydrogen atom, Aryl group, monocyclic aromatic heterocyclic residue; amino group substituted with alkyl group or aromatic ring residue, alkyloxy group, alkylthioxy group, ester group, carbamoyl group, acetamide, thio group or acyl group And Y may be different from each other Z 1 and Z 2 each independently represent a hydrogen atom, an aromatic hydrocarbon or an aromatic heterocyclic ring, and Z 1 and Z 2 may be the same or different.)
(In Formulas (4) and (5), W each independently represents N or C-, at least one is C-, and an alkyl group or a substituent containing an alkyl group is bonded, and Z is Each independently represents a hydrogen atom, an aromatic hydrocarbon or an aromatic heterocycle, which may be the same or different, and M represents a metal atom.)
[11] Any of the above [1] to [10], wherein the conductive compound is a compound represented by formula (6), (7), (10), (11), (12) or (13) Organic thermoelectric conversion material described in.
In formulas (6) and (7), X 1 and X 2 are the same as Y in the above formula (3), and formulas (6), (7), (10), (11), (12) and ( 13) in which at least one of R 1 and R 2 , typically both, at least one of R 3 to R 14 , and R 47 to R 50 are the same as R in the above formula (1), m 1 to m 4 are the same as m in the above formula (1), R 47 to R 49 are bonded to one or more W, and R 50 can be bonded to a bondable position of the basic skeleton , Preferably one or more W.
[12] An organic thermoelectric conversion element having a thermoelectric conversion layer containing the thermoelectric conversion material according to any one of [1] to [11].
[13] A horizontal or vertical organic thermoelectric conversion element having a thermoelectric conversion layer containing the thermoelectric conversion material according to any one of [1] to [11].
本発明は、従来の有機熱電変換材料に比べ格段に大きなゼーベック係数を示す有機熱電変換材料及びそれを含む熱電変換層を有する有機熱電変換素子を提供することができる。 INDUSTRIAL APPLICABILITY The present invention can provide an organic thermoelectric conversion material exhibiting a significantly higher Seebeck coefficient than conventional organic thermoelectric conversion materials, and an organic thermoelectric conversion element having a thermoelectric conversion layer including the same.
以下、本発明の実施形態について詳細に説明する。
本発明の有機熱電変換材料は、キャリア輸送特性を有する多環芳香族環からなる基本骨格と、これに結合するアルキル基またはアルキル基を有する置換基とを有し、所定温度で構造相転移を生じる導電性化合物を熱電変換物質として含有するものである。
Hereinafter, embodiments of the present invention will be described in detail.
The organic thermoelectric conversion material of the present invention has a basic skeleton consisting of a polycyclic aromatic ring having carrier transport properties, and an alkyl group or a substituent having an alkyl group bonded thereto, and undergoes structural phase transition at a predetermined temperature. The resulting conductive compound is contained as a thermoelectric conversion material.
本発明で用いる導電性化合物は、平面π共役構造を有し一般にキャリア輸送能の高い多環芳香族化合物に由来する基本骨格を有する。このような構造では、隣接分子間でπ‐πスタッキングが期待され、隣接分子間のトランスファー積分が室温でバンド伝導が期待できるほど大きい。一方、本発明で用いる導電性化合物は、所定の温度で熱運動により基本骨格の分子間距離や分子パッキング構造の変化を引き起こす置換基が多環式芳香族環に結合している。このような置換基は、アルキル基またはアルキル基を有する置換基のように回転自由な結合を有しており、所定の温度で熱運動して、隣接する分子間距離や分子パッキング構造を変化させ、導電性化合物の体積変化や構造相転移を生じさせる。この結果、温度変化を敏感に捉え熱起電力(ゼーベック係数)が高められるものと解される。 The conductive compound used in the present invention has a basic π conjugated structure, and generally has a basic skeleton derived from a polycyclic aromatic compound having a high carrier transportability. In such a structure, π-π stacking is expected between adjacent molecules, and the transfer integral between adjacent molecules is so large that band conduction can be expected at room temperature. On the other hand, in the conductive compound used in the present invention, a substituent causing a change in intermolecular distance and molecular packing structure of the basic skeleton by thermal movement at a predetermined temperature is bonded to the polycyclic aromatic ring. Such a substituent has a rotatable bond like an alkyl group or a substituent having an alkyl group, and is thermally moved at a predetermined temperature to change an adjacent intermolecular distance or a molecular packing structure. , Cause a volume change or structural phase transition of the conductive compound. As a result, it is understood that the thermoelectromotive force (Seebeck coefficient) can be enhanced by sensitively detecting the temperature change.
ここで、本願明細書中で用いる幾つかの用語について定義を記載する。
「多環芳香族化合物」とは、多環芳香属環を有する化合物を意味し、「多環芳香族化合物からなる基本骨格」とは、このような化合物の全構造のうち、置換基部分を除いた構造を意味する。
「ファンデルワールス体積」とは、分子を構成する原子をファンデルワールス半径を有する球体で近似した場合の、分子あるいはその構成要素の体積を意味する。「ファンデルワールス体積比」とは、分子の構成する複数の構成要素のファンデルワールス体積の比である。
「側鎖の長さ」とは、主骨格を構成する原子のうち側鎖が化学結合している原子の中心位置から、側鎖を構成する原子のうち安定構造において最も距離が離れた原子の中心位置までの距離を意味する。
「π共役構造」とは、多重結合が単結合と交互に連なった構造を表わし、「平面π共役構造」とは、π共役構造を形成する原子が同一平面状に存在する構造を意味する。
「熱起電力(ゼーベック係数)」とは、電気伝導性を有する物質上の異なる2カ所に生じる定常的な電位差の温度依存性を測定し、その勾配からS=−ΔV/ΔT(ΔVは電位差、ΔTは温度差)で計算される値を意味する。
「導電率」とは、ソース・メーター等によって測定された材料の電流−電圧特性から求められる電気コンダクタンスに対し、電流経路の長さを乗じ、断面積で除した値を意味する。
「熱伝導率」とは、サーモリフレクタンス法、温度波分析法、定常熱流法などによって測定した熱拡散率に、材料の比熱と密度を乗じることによって求めた値を意味する。
本願明細書において「構造相転移」とは、物質の空間的に均一とみなすことのできる構造(秩序構造でも無秩序構造でもよい)が、温度などの外的条件によって異なる状態の構造へと転移することを意味し、「構造相転移温度」とは、その変化が現れる温度を意味する。構造相転移温度は、例えば、示差走査熱量測定(DSC)によって測定した際において吸熱あるいは発熱ピークが現れることや、比熱の温度依存性が変化する(比熱を温度で微分した勾配が急変する)ことで測定される。また、半導体材料における導電率の温度依存性がアレニウス型の熱活性を示すのに対し、その活性化エネルギーが急変する温度としても測定される。
Here, definitions are given for some terms used in the present specification.
The “polycyclic aromatic compound” means a compound having a polycyclic aromatic ring, and the “basic skeleton consisting of the polycyclic aromatic compound” means a substituent part of the entire structure of such a compound. It means the removed structure.
The "van der Waals volume" means the volume of a molecule or its constituent elements when atoms constituting the molecule are approximated by a sphere having a van der Waals radius. The "van der Waals volume ratio" is a ratio of van der Waals volumes of a plurality of constituent elements of the molecule.
The “side chain length” is the length of the atoms constituting the side chain which is the most distant in the stable structure from the central position of the atom to which the side chain is chemically bonded among the atoms constituting the main skeleton. It means the distance to the center position.
The “π conjugated structure” refers to a structure in which multiple bonds are alternately connected to single bonds, and the “planar π conjugated structure” refers to a structure in which atoms forming a π conjugated structure exist in the same plane.
The “thermoelectromotive force (Seebeck coefficient)” is the measurement of the temperature dependence of the steady-state potential difference generated at two different places on a substance having electrical conductivity, and from the gradient, S = −ΔV / ΔT (ΔV is the potential difference , ΔT means a value calculated by temperature difference).
The term "conductivity" refers to the electrical conductance determined from the current-voltage characteristics of the material measured by a source meter or the like, multiplied by the length of the current path and divided by the cross-sectional area.
"Thermal conductivity" means a value obtained by multiplying the specific heat of a material and the density by the thermal diffusivity measured by a thermoreflectance method, a temperature wave analysis method, a steady state heat flow method or the like.
In the present specification, “structural phase transition” refers to a structure (which may be an ordered structure or a disordered structure) that can be regarded as spatially uniform of a substance, converted to a structure in a different state depending on external conditions such as temperature. By "structural phase transition temperature" is meant the temperature at which the change appears. The structural phase transition temperature is, for example, that an endothermic or exothermic peak appears when measured by differential scanning calorimetry (DSC), or that the temperature dependency of the specific heat changes (the gradient of the specific heat differentiated with the temperature changes suddenly) It is measured by In addition, while the temperature dependence of the conductivity in the semiconductor material shows Arrhenius-type thermal activity, it is also measured as a temperature at which the activation energy changes rapidly.
本発明の有機熱電変換材料に含有される導電性化合物としては、典型的には下記一般式(1)又は(2)で表される化合物が挙げられる。
式(1)および(2)中、Xはキャリア輸送特性を有する多環芳香族環を表し、Rはそれぞれ独立してアルキル基またはアルキル基を有する置換基を表す。mはRがXに結合可能な最大数以下の数であり、基本骨格により異なるが例えば1〜8の整数、典型的には、1〜2の整数を表す。式(1)中のnは1以上の整数であり、nが2以上の場合には、Xはそれぞれ異なる多環式芳香族環であってもよい。
As a conductive compound contained in the organic thermoelectric conversion material of this invention, the compound typically represented by following General formula (1) or (2) is mentioned.
In formulas (1) and (2), X represents a polycyclic aromatic ring having a carrier transport property, and R each independently represents an alkyl group or a substituent having an alkyl group. m is a number equal to or less than the maximum number that R can bind to X, and varies depending on the basic skeleton, but represents, for example, an integer of 1 to 8 and typically an integer of 1 to 2. In the formula (1), n is an integer of 1 or more, and when n is 2 or more, X may be different polycyclic aromatic rings.
上述の通り、本発明の有機熱電変換材料に熱電変換物質として含有される導電性化合物の基本骨格を構成する上記Xで表される多環芳香族環は、芳香族環が2以上縮合した構造であり、平面π共役構造を有している。このため、分子が配向して並び隣接分子間のスタッキング効果を生じ易くなり、分子間の電子又は正孔の移動が容易になるため高いキャリア移動度を得られ易い。 As described above, the polycyclic aromatic ring represented by X, which constitutes the basic skeleton of the conductive compound contained as a thermoelectric conversion material in the organic thermoelectric conversion material of the present invention, has a structure in which two or more aromatic rings are condensed. And has a planar π conjugate structure. As a result, the molecules are oriented to easily form a stacking effect between adjacent molecules, facilitating the movement of electrons or holes between molecules, and a high carrier mobility can be easily obtained.
上記Xで表される多環芳香族環は、芳香族炭化水素、及び芳香族複素環の何れか一方又は両方で構成することができ、キャリア移動度が高い多環構造を選択することが好ましい。 The polycyclic aromatic ring represented by X can be composed of either or both of an aromatic hydrocarbon and an aromatic heterocyclic ring, and it is preferable to select a polycyclic structure having high carrier mobility. .
上記Xで表される多環芳香族環の具体例としては、例えば、
ナフタレン、アントラセン、テトラセン、ペンタセン、ヘキサセン、ヘプタセン、アセナフテン、ナフタセン、アズレン、フェナレン、ベンゾアントラセン、フェナントレン、クリセン、アンタントレン、ピラントレン、インデノインデン、ピセン、トリフェニレン、ペリレン、ナフトペリレン、コロネン、オバレン、ピレン、ベンゾピレン、ヘキサヘリセン、ヘプタヘリセン、オクタヘリセン、ノナヘリセン、デカヘリセン、ウンデカヘリセン、ドデカヘリセン等;テトラフェン、ペンタフェン、ヘキサフェン、ヘプタフェン、オクタフェン、ノナフェン、デカフェン、ウンデカフェン、ドデカフェン、C60フラーレン、C70フラーレンなどの多環芳香族炭化水素;並びに
インドール、イソインドール、プリン、キノリン、イソキノリン、キノキサリン、シンノリン、プテリジン、ベンゾピラン、アクリジン、キサンテン、ベンゾイミダゾール、インダゾール、フェナジン、ナフチリジン、ベンゾチアジアゾール、ベンゾチアゾール、ジチエノシロール、フルオレン、チエノチオフェン、カルバゾール、フェノチアジン、フェノオキサジン、ベンゾチエノベンゾチオフェン、ジチエノチオフェン、ベンゾジチオフェン、ベンゾジセレノフェン、ジナフトチエノチオフェン、ジアンスラチエノチオフェン、ベンゾビスオキサゾールなどのヘテロアセン系及びこれらが複数結合したポリヘテロアセン類、フェナントレン、フェナントリジン、シクロペンタジチオフェン、ベンゾ-C-シンノリン、ペリレンジカルボキシイミド、ベンゾトリフラン、ベンゾトリチオフェン、ポルフィリン、クロリン、コリン、フタロシアニン、ポルフィラジンなどの多環芳香族複素環が挙げられる。
As specific examples of the polycyclic aromatic ring represented by X, for example,
Naphthalene, anthracene, tetracene, pentacene, hexacene, heptacene, acenaphthene, naphthacene, azulene, phenalene, benzoanthracene, phenanthrene, phenanthrene, chrysene, anthantrene, pyrantrene, indenoindene, picene, triphenylene, perylene, naphthoperylene, coronene, ovalene, pyrene, Benzopyrene, hexahelicene, heptahelicene, octahelicene, nonahelicene, decahelicene, undecahelicene, dodecahelicene, etc. Hydrocarbons; and indole, isoindole, purine, quinoline, isoquinoli , Quinoxaline, cinnoline, pteridine, benzopyran, acridine, xanthene, benzimidazole, indazole, indazole, phenazine, naphthyridine, benzothiadiazole, benzothiazole, dithienosilole, fluorene, thienothiophene, carbazole, phenothiazine, phenooxazine, benzothienobenzothiophene, dithieno Heteroacenes such as thiophene, benzodithiophene, benzodiselenophene, dinaphthothienothiophene, dianthrathienothiophene, benzobisoxazole, and polyheteroacenes in which a plurality of these are combined, phenanthrene, phenanthridine, cyclopentadithiophene, Benzo-C-cinnoline, perylenedicarboximide, benzotrifuran, benzotrithiophene, porphyri , Chlorine, choline, phthalocyanine, and a polycyclic aromatic heterocyclic rings such as porphyrazine.
中でも、キャリア輸送能が高い点で、ナフタレン、アンスラセン、ナフタセン、ペンタセン等のアセン系炭化水素や、ベンゾジチオフェン、ベンゾチエノベンゾチオフェン、ジナフトジチオフェン等のヘテロアセン類、或いはポルフィリン、フタロシアニン、ポルフィラジン等が好ましい。 Among them, acene hydrocarbons such as naphthalene, anthracene, naphthacene and pentacene, heteroacenes such as benzodithiophene, benzothienobenzothiophene and dinaphthodithiophene, porphyrin, phthalocyanine, porphyrazine, etc. in view of high carrier transportability. Is preferred.
多環芳香族化合物の基本骨格の非限定的な具体例を以下に示す。
上述の通り、導電性化合物の基本骨格は、2以上の多環芳香族環が単結合で連結してπ共役構造を形成してもよい。基本骨格が複数の多環芳香族環が連結して構成される場合、多環芳香族環の数は、一般的には2〜2000とすることができ、2〜1000とすることが好ましく、2〜100とすることがより好ましく、2〜5とすることが更に好ましい。勿論、単一の多環芳香族環で基本骨格を構成してもよい。また、単数又は複数の多環芳香族環によって構成される基本骨格の分子量(Mw)は、50〜200000でもよく、好ましくは100〜100000であり、より好ましくは200〜50000Mwであり、特に好ましくは200〜30000である。
Non-limiting specific examples of the basic skeleton of the polycyclic aromatic compound are shown below.
As described above, in the basic skeleton of the conductive compound, two or more polycyclic aromatic rings may be linked by a single bond to form a π-conjugated structure. When the basic skeleton is constituted by linking a plurality of polycyclic aromatic rings, the number of polycyclic aromatic rings can be generally 2 to 2000, preferably 2 to 1000, It is more preferable to set it as 2-100, and it is still more preferable to set it as 2-5. Of course, the basic skeleton may be composed of a single polycyclic aromatic ring. The molecular weight (Mw) of the basic skeleton constituted by one or more polycyclic aromatic rings may be 50 to 200,000, preferably 100 to 100,000, more preferably 200 to 50,000 Mw, particularly preferably 200 to 30,000.
本発明の有機熱電変換材料に含まれる導電性化合物は、上記の多環芳香族環によって発達したπ共役構造が形成されていると共に、当該多環芳香族環に上記Rで表されるアルキル基又はアルキル基を有する置換基が結合している。
このような置換基は、回転自由な結合を有しており、所定の温度、好ましくは−50℃〜200℃の範囲の何れかの温度で熱運動を生じる。このような置換基は、熱に敏感に応答して運動し、導電性化合物の体積変化や構造相転移を生じさせる。この結果、多環芳香族化合物の基本骨格等によるキャリア輸送能を変調させ、高効率の熱電変換を可能にする。このような置換基の熱運動による導電性化合物の構造相転移は、示差走査熱量測定(DSC)の吸発熱ピークにより確認することができる。
The conductive compound contained in the organic thermoelectric conversion material of the present invention has the π conjugated structure developed by the above-mentioned polycyclic aromatic ring formed, and the alkyl group represented by R in the above-mentioned polycyclic aromatic ring Or a substituent having an alkyl group is bonded.
Such a substituent has a rotationally free bond and produces thermal motion at a predetermined temperature, preferably any temperature in the range of -50 ° C to 200 ° C. Such substituents move in response to heat in a sensitive manner, causing volume change and structural phase transition of the conductive compound. As a result, it is possible to modulate the carrier transport ability by the basic skeleton or the like of the polycyclic aromatic compound and to enable highly efficient thermoelectric conversion. The structural phase transition of the conductive compound due to the thermal movement of such a substituent can be confirmed by the endothermic peak of differential scanning calorimetry (DSC).
熱に敏感に応答して熱運動を生じるには、置換基は、多環芳香族骨格に回転自由な共有結合で結合することが好ましい。また、置換基自体も多数の回転自由な共有結合を有することが好ましく、このような点から、置換基は、アルキル基を有する置換基であることが好ましく、鎖状のアルキル基を主鎖とする置換基であることがより好ましく、直鎖のアルキル基が更に好ましい。 In order to be responsive to heat and to cause thermal movement, the substituent is preferably attached to the polycyclic aromatic skeleton via a rotatable free covalent bond. In addition, it is preferable that the substituent itself also have a large number of rotational free covalent bonds, and from such a point of view, the substituent is preferably a substituent having an alkyl group, and a chain alkyl group is The substituent is more preferably a linear alkyl group.
また、高い熱起電力(ゼーベック係数)を達成するためには、多環芳香族環による発達したπ共役構造を維持しながら、置換基の熱運動により熱に敏感に応答して構造相転移をもたらすことが重要と考えられ、この観点から、多環芳香族骨格に対する側鎖のファンデルワールス体積比は指標の1つと考えられる。多環芳香族骨格の違いにより結晶性や結晶形による凝集力が異なり、その分子間の結合力は異なるが、一般的に本発明の熱電変換材料に含有される導電性化合物においては、同化合物中における置換基が占めるファンデルワールス体積比が、5%〜80%であることが好ましく、25〜60%であることが好ましく、30〜60%がより好ましい。また10〜50%であることが更に好ましく、15〜50%であることが特に好ましい。この多環芳香族骨格に対する側鎖のファンデルワールス体積比を設計することにより構造相転移の温度や熱運動をコントロールすることが可能となる。素子を使用する環境により、求められる温度(温度差)が異なるが、この能力を活用することにより、適した素子を設計することが出来る。 In addition, in order to achieve high thermal electromotive force (Seebeck coefficient), while maintaining the developed π-conjugated structure by the polycyclic aromatic ring, the thermal movement of the substituent responds to the heat sensitively to the structural phase transition. It is considered important to bring about, and in this respect, the van der Waals volume ratio of the side chain to the polycyclic aromatic skeleton is considered to be one of the indexes. Although the cohesion according to crystallinity and crystal form is different due to the difference of the polycyclic aromatic skeleton, and the bonding force between the molecules is different, in general, in the conductive compound contained in the thermoelectric conversion material of the present invention, the same compound The van der Waals volume ratio occupied by the substituents in the inside is preferably 5% to 80%, preferably 25 to 60%, and more preferably 30 to 60%. It is further more preferably 10 to 50%, particularly preferably 15 to 50%. By designing the van der Waals volume ratio of the side chain to the polycyclic aromatic skeleton, it is possible to control the temperature and thermal movement of the structural phase transition. Although the required temperature (temperature difference) varies depending on the environment in which the device is used, it is possible to design a suitable device by utilizing this ability.
同様の点から、アルキル基またはアルキル基を有する置換基のアルキル基部分は、鎖状又は環状の、好ましくは直鎖状の炭素原子数1〜20の基であり、より好ましくは炭素数2〜18の基であり、更に好ましくは炭素数4〜15の基である。 From the same point of view, the alkyl group portion of the alkyl group or the substituent having the alkyl group is a linear or cyclic, preferably linear, group having 1 to 20 carbon atoms, and more preferably 2 to 2 carbon atoms. It is a group of 18 and more preferably a group having 4 to 15 carbon atoms.
具体的には、直鎖アルキル基としては、メチル基、エチル基、プロピル基、ブチル基、ペンチル基、ヘキシル基、ヘプチル基、オクチル基、ノニル基、デシル基、ウンデシル基、ドデシル基、トリデシル基、テトラデシル基、ペンタデシル基、ヘキサデシル基、ヘプタデシル基、オクタデシル基、ノナデシル基、エイコシル基が挙げられ、ブチル基、ペンチル基、ヘキシル基、ヘプチル基、オクチル基、ノニル基、デシル基、ウンデシル基、ドデシル基、トリデシル基、テトラデシル基、ペンタデシル基、ヘキサデシル基、ヘプタデシル基、オクタデシル基、ノナデシル基、エイコシル基が好ましく、オクチル基、ノニル基、デシル基、ウンデシル基、ドデシル基、トリデシル基、テトラデシル基、ペンタデシル基がより好ましい。 Specifically, as the linear alkyl group, methyl group, ethyl group, propyl group, butyl group, pentyl group, hexyl group, heptyl group, octyl group, nonyl group, decyl group, undecyl group, dodecyl group, tridecyl group And tetradecyl, pentadecyl, hexadecyl, heptadecyl, octadecyl, nonadecyl, eicosyl, butyl, pentyl, hexyl, heptyl, octyl, nonyl, decyl, undecyl, dodecyl Group, tridecyl group, tetradecyl group, pentadecyl group, hexadecyl group, heptadecyl group, octadecyl group, nonadecyl group, eicosyl group is preferable, and octyl group, nonyl group, decyl group, undecyl group, dodecyl group, tridecyl group, tetradecyl group, pentadecyl Groups are more preferred.
また分岐鎖アルキル基としては、例えばイソプロピル基、イソブチル基、イソアミル基、s−ブチル基、t−ブチル基、2−メチルブチル基、2−メチルヘキシル基、2−エチルヘキシル基、2−メチルオクチル基、2−エチルオクチル基を挙げることができ、イソブチル基、イソアミル基、s−ブチル基、t−ブチル基、2−メチルブチル基、2−メチルヘキシル基、2−エチルヘキシル基、2−メチルオクチル基、2−エチルオクチル基が挙げられる。また環状のアルキル基としてシクロペンチル基、シクロヘキシル基などが挙げられる。 The branched alkyl group is, for example, isopropyl group, isobutyl group, isoamyl group, s-butyl group, t-butyl group, 2-methylbutyl group, 2-methylhexyl group, 2-ethylhexyl group, 2-methyloctyl group, Examples thereof include 2-ethyloctyl group, isobutyl group, isoamyl group, s-butyl group, t-butyl group, 2-methylbutyl group, 2-methylhexyl group, 2-ethylhexyl group, 2-methyloctyl group, 2 -Ethyl octyl group is mentioned. Moreover, a cyclopentyl group, a cyclohexyl group etc. are mentioned as cyclic | annular alkyl group.
アルキル基を有する置換基としては、例えば、アルキル基が以下の置換基で置換された基が挙げられる。
1)フェニル基、ビフェニル基、ナフチル基等のアリール基
2)フリル基、チエニル基、チエニレン基、テニル基、ピリジル基、ピペリジル基、キノリル基、イソキノリル基、イミダゾリル基、モルホリノ基、ベンゾチエニル基、ベンゾフェニル基等の単環式芳香族複素環残基
3)アルキル基又は芳香族環残基で置換されたアミノ基、アルキルオキシ基、アルキルチオキシ基、エステル基、カルバモイル基、アセトアミド、チオ基又はアシル基
4)フッ素原子、塩素原子、臭素原子などのハロゲン原子、ニトロ基、シアノ基
これらの置換基は1つ又は複数有しても良い。
As a substituent which has an alkyl group, the group by which the alkyl group was substituted by the following substituent is mentioned, for example.
1) Aryl groups such as phenyl, biphenyl and naphthyl 2) Furyl, thienyl, thienylene, thenyl, pyridyl, piperidyl, quinolyl, isoquinolyl, imidazolyl, morpholino, benzothienyl, Monocyclic aromatic heterocyclic residue 3) such as benzophenyl group 3) Amino group substituted by alkyl group or aromatic ring residue, alkyloxy group, alkylthioxy group, ester group, carbamoyl group, acetamide, thio group or Acyl group 4) Fluorine atom, halogen atom such as chlorine atom and bromine atom, nitro group, cyano group These substituents may have one or more.
また、アルキル基が、以下の化学構造を介して多環芳香族骨格に結合している基が挙げられる。
1)酸素原子、窒素原子、硫黄原子、ケイ素原子、リン原子などのヘテロ原子
2)フェニル基、ビフェニル基、ナフチル基等のアリール基
3)フリル基、チオフェン基、チエニル基、チエニレン基、テニル基、ピリジル基、イミダゾリル基、モルホリノ基、ベンゾチエニル基、ベンゾフェニル基等の芳香族複素環残基
4)カルボニル基、チオカルボニル基
In addition, groups in which an alkyl group is bonded to a polycyclic aromatic skeleton via the following chemical structure can be mentioned.
1) Hetero atoms such as oxygen atom, nitrogen atom, sulfur atom, silicon atom and phosphorus atom 2) aryl groups such as phenyl group, biphenyl group and naphthyl group 3) furyl group, thiophene group, thienyl group, thienylene group, tenyl group Aromatic heterocyclic residue 4) carbonyl group, thiocarbonyl group such as pyridyl group, imidazolyl group, morpholino group, benzothienyl group and benzophenyl group
アルキル基を有する置換基としては、例えば、シリルエチニル基で置換されたアルキル基、アリール基(例えば、フェニル基、ビフェニル基、ナフチル基等)で置換されたアルキル基、芳香族複素環基(例えば、フリル基、チエニル基、ピリジル基、イミダゾリル基等)で置換されたアルキル基、アルコキシル基(例えば、メトキシ基、エトキシ基、プロピルオキシ基、ペンチルオキシ基、ヘキシルオキシ基、オクチルオキシ基、ドデシルオキシ基等)、シクロアルコキシル基(例えば、シクロペンチルオキシ基、シクロヘキシルオキシ基等)、アリールオキシ基(例えば、フェノキシ基、ナフチルオキシ基等)で置換されたアルキル基、アルキルチオ基(例えば、メチルチオ基、エチルチオ基、プロピルチオ基、ペンチルチオ基、ヘキシルチオ基、オクチルチオ基、ドデシルチオ基等)、シクロアルキルチオ基(例えば、シクロペンチルチオ基、シクロヘキシルチオ基等)、アリールチオ基(例えば、フェニルチオ基、ナフチルチオ基等)で置換されたアルキル基、アルコキシカルボニル基(例えば、メチルオキシカルボニル基、エチルオキシカルボニル基、ブチルオキシカルボニル基、オクチルオキシカルボニル基、ドデシルオキシカルボニル基等)、アリールオキシカルボニル基(例えば、フェニルオキシカルボニル基、ナフチルオキシカルボニル基等)で置換されたアルキル基、アルキルスルファモイル基、アルキルカルボニル基、アルキルチオカルボニル基、アルキルカルボニルオキシ基、アルキルカルボニルアミノ基、アルキルカルバモイル基、アルキルウレイド基、アルキルスルフィニル基、アルキルスルホニル基、アルキル基が置換したアリールスルホニル基、アルキルアミノ基、フルオロアルキル基、パーフルオロアルキル基、アルキルシリル基等が挙げられる。
本発明の導電性材料に含まれる導電性化合物では、上述した多環芳香族環の1つに対して複数の置換基を有してもよく、通常多環芳香族環の1つ当たり1〜8の置換基を有することができ、1〜4の置換基を有することが好ましく、1〜3の置換基を有することがより好ましく、2の置換基を有することが特に好ましい。
As the substituent having an alkyl group, for example, an alkyl group substituted with a silylethynyl group, an alkyl group substituted with an aryl group (eg, a phenyl group, a biphenyl group, a naphthyl group etc.), an aromatic heterocyclic group (eg, Alkyl group substituted with furyl group, thienyl group, pyridyl group, imidazolyl group etc., alkoxyl group (eg, methoxy group, ethoxy group, propyloxy group, pentyloxy group, hexyloxy group, octyloxy group, dodecyloxy group) Group, etc.), cycloalkoxyl group (eg, cyclopentyloxy group, cyclohexyloxy group etc.), alkyl group substituted by aryloxy group (eg, phenoxy group, naphthyloxy group etc.), alkylthio group (eg. Methylthio group, ethylthio group) Group, propylthio group, pentylthio group, hexyl An alkyl group substituted with an aryl group, an octylthio group, a dodecylthio group etc., a cycloalkylthio group (eg, a cyclopentylthio group, a cyclohexylthio group etc.), an arylthio group (eg a phenylthio group, a naphthylthio group etc.), an alkoxycarbonyl group (eg For example, it is substituted with a methyloxycarbonyl group, an ethyloxycarbonyl group, a butyloxycarbonyl group, an octyloxycarbonyl group, a dodecyloxycarbonyl group etc., an aryloxycarbonyl group (eg, a phenyloxycarbonyl group, a naphthyloxycarbonyl group etc.) Alkyl group, alkylsulfamoyl group, alkylcarbonyl group, alkylthiocarbonyl group, alkylcarbonyloxy group, alkylcarbonylamino group, alkylcarbamoyl group, alkylureido group, Ruki Rusuru alkylsulfinyl group, an alkylsulfonyl group, an alkyl group substituted with an arylsulfonyl group, an alkylamino group, fluoroalkyl group, perfluoroalkyl group, alkylsilyl group, and the like.
The conductive compound contained in the conductive material of the present invention may have a plurality of substituents for one of the above-mentioned polycyclic aromatic rings, and usually 1 to 6 per one polycyclic aromatic ring. It may have 8 substituents, preferably 1 to 4 substituents, more preferably 1 to 3 substituents, and particularly preferably 2 substituents.
また、本発明を構成する導電性化合物では、上述した置換基のアルキル基部分(置換基がアルキル基である場合にはアルキル基自体)の分子量が導電性化合物全体の分子量に対して5〜80%を占めることが好ましい。例えば、多環芳香族骨格部分の一方の幅がベンゼン環一個程度に狭くもう一方の幅がそれより長い棒状の化合物では、その割合は25〜60%を占めることがより好ましく、多環芳香族骨格部分の幅がベンゼン環二個程度以上に幅広い化合物で、その割合は10〜50%を占めることが好ましい。また、置換基全体で回転自由な結合が複数存在することが好ましい。一方、アルキル基以外の構造は、多環芳香族環と共にπ共役構造を形成してもよい。適宜、アルキル基の数、置換位置、分鎖数、長さを調整することで最適な特性を得ることが可能となる。 Further, in the conductive compound constituting the present invention, the molecular weight of the alkyl group portion of the above-mentioned substituent (the alkyl group itself when the substituent is an alkyl group) is 5 to 80 with respect to the molecular weight of the entire conductive compound. It is preferable to occupy%. For example, in a rod-like compound in which one width of the polycyclic aromatic skeleton is as narrow as one benzene ring and the other width is longer, the proportion thereof is more preferably 25 to 60%, and the polycyclic aromatic It is preferable that the width of the skeleton portion is a compound which is broad as two or more benzene rings, and the proportion thereof is 10 to 50%. In addition, it is preferable that a plurality of rotation free bonds exist in the entire substituent. On the other hand, a structure other than an alkyl group may form a π-conjugated structure together with a polycyclic aromatic ring. Optimal characteristics can be obtained by appropriately adjusting the number of alkyl groups, substitution positions, the number of branched chains, and the length.
導電性化合物の構造相転移を生じる温度は、上記の多環芳香族化合物の基本骨格と、上記の置換基との組合せによって変動する。したがって、導電性化合物が使用されることが予想される温度に応じて、適宜好ましい分子設計をすることが好ましい。特に、本発明の導電性化合物では、導電性化合物のアルキル基の長さをコントロールすることで、熱電変換材料の相転移の温度の制御や熱運動の制御が可能と考えられる。従って、素子を用いる環境に応じて、基本骨格と置換基との組合せ、特にアルキル基の長さ又はファンデルワールス体積比を適宜選択し、効果的な熱電変換素子を得ることができると考えられる。
熱電変換素子の通常の用途からすると、−50℃〜200℃の範囲の温度で構造相転移を生じる分子設計とすることが好ましく、0〜180℃の範囲の温度で構造相転移を生じる分子設計とすることがより好ましく、10〜150℃の範囲の温度で構造相転移を生じる分子設計とすることが更に好ましい。従って、このような温度範囲で構造相転移を生じるように、基本骨格と置換基との組合せ、特にアルキル基の長さ又はファンデルワールス体積比を選択することが好ましい。
導電性化合物の構造相転移を生じる温度(構造相転移点)は、示差走査熱量測定(DSC)の吸発熱ピークにより確認することができる。導電性化合物の構造相転移がみられる温度の近傍に大きなパワーファクターの相対値を示す熱電変換素子は、当該温度付近を使用温度とするのに最適な熱電変換材料であると確認できる。
The temperature causing the structural phase transition of the conductive compound varies depending on the combination of the basic skeleton of the above-mentioned polycyclic aromatic compound and the above-mentioned substituent. Therefore, depending on the temperature at which the conductive compound is expected to be used, it is preferable to appropriately design a preferred molecule. In particular, in the conductive compound of the present invention, it is considered possible to control the temperature of the phase transition of the thermoelectric conversion material and control the thermal motion by controlling the length of the alkyl group of the conductive compound. Therefore, depending on the environment in which the element is used, it is considered that an effective thermoelectric conversion element can be obtained by appropriately selecting the combination of the basic skeleton and the substituent, particularly the length of the alkyl group or the van der Waals volume ratio. .
In view of the usual application of the thermoelectric conversion element, it is preferable to design the molecular to generate a structural phase transition at a temperature in the range of -50 ° C to 200 ° C, and to design the molecular phase to generate a structural phase transition at a temperature in the range of It is more preferable that the molecular design be such that a structural phase transition occurs at a temperature in the range of 10 to 150 ° C. Therefore, it is preferable to select the combination of the basic skeleton and the substituent, particularly the length of the alkyl group or the van der Waals' volume ratio, so as to cause structural phase transition in such a temperature range.
The temperature (structural phase transition point) at which the structural phase transition of the conductive compound occurs can be confirmed by the endothermic peak of differential scanning calorimetry (DSC). A thermoelectric conversion element exhibiting a relative value of a large power factor near the temperature at which a structural phase transition of the conductive compound is observed can be confirmed to be a thermoelectric conversion material most suitable for setting the temperature around that temperature to the use temperature.
このような観点から、好ましい導電性化合物の代表的な例を以下に示す。 From this point of view, representative examples of preferable conductive compounds are shown below.
(1)ポルフィリン骨格を有する導電性化合物
式(5)中、Mは金属原子を表す。式(4)及び(5)中、Zはそれぞれ独立して水素原子、或いは無置換、又はアルキル基若しくはアルキル基を有する置換基で置換された芳香族炭化水素又は芳香族複素環であり、無置換の芳香族炭化水素又は芳香族複素環が好ましい。複数のZは同じでも異なってもよい。
Wはそれぞれ独立してN又はCR3を表し、少なくとも1つのWはCR3を表し、R3は水素原子、アルキル基又はアルキル基を有する置換基を表し、少なくとも1つのR3はアルキル基又はアルキル基を有する置換基を表す。好ましくは対向する1組のWは、CR3を表し、R3がアルキル基若しくはアルキル基を有する置換基であり、他の対抗する1組のWは、N又はCR3を表し、R3は水素原子であり、より好ましくはCR3を表し、R3は水素原子である。
(1) Conductive compound having porphyrin skeleton
In formula (5), M represents a metal atom. In formulas (4) and (5), Z is each independently a hydrogen atom, or an unsubstituted or unsubstituted hydrocarbon, or an aromatic hydrocarbon or aromatic heterocycle substituted with an alkyl group or a substituent having an alkyl group, Substituted aromatic hydrocarbons or aromatic heterocycles are preferred. Plural Z may be the same or different.
W each independently represents N or CR 3 , at least one W represents CR 3 , R 3 represents a hydrogen atom, an alkyl group or a substituent having an alkyl group, and at least one R 3 represents an alkyl group or Represents a substituent having an alkyl group. Preferably, one opposing set of W represents CR 3 , R 3 is an alkyl group or a substituent having an alkyl group, and the other opposing set of W represents N or CR 3 , R 3 represents It is a hydrogen atom, more preferably CR 3 , wherein R 3 is a hydrogen atom.
Zを構成する芳香族炭化水素環としては、例えば、フェニル、ビフェニル、ナフタレン、アントラセン、テトラセン、ペンタセン、ヘキサセン、ヘプタセン、アセナフテン、ナフタセン、アズレン、フェナレン、ベンゾアントラセン、フェナントレン、クリセン、アンタントレン、ピラントレン、インデノインデン、ピセン、トリフェニレン、ペリレン、ナフトペリレン、コロネン、オバレン、ピレン、ベンゾピレン、ヘキサヘリセン、ヘプタヘリセン、オクタヘリセン、ノナヘリセン、デカヘリセン、ウンデカヘリセン、ドデカヘリセン等;テトラフェン、ペンタフェン、ヘキサフェン、ヘプタフェン、オクタフェン、ノナフェン、デカフェン、ウンデカフェン、ドデカフェン、C60フラーレン、C70フラーレン等を挙げることができ、フェニル、ビフェニル、ナフタレンが好ましい。芳香族複素環としては、例えばフリル、チオフェン、チエニル、チエニレン、テニル、ピリジル、イミダゾリル、モルホリノ、ベンゾチエニル、ベンゾフェニル等を挙げることができる。これら芳香族炭化水素環又は芳香族複素環を任意選択で置換するアルキル基又はアルキル基を有する置換基としては、式(1)及び(2)のRで説明した基を挙げることができ、炭素数1〜15の直鎖アルキル基が好ましい。また、R3を構成するアルキル基又はアルキル基を有する置換基も、式(1)及び(2)のRで説明した基を挙げることができる。好ましくは、1組の対向する位置のR3が炭素数1〜30の直鎖アルキル基又は炭素数1〜30の直鎖アルキル基を有する基であることが好ましく、炭素数5〜20の直鎖アルキル基又は炭素数5〜20の直鎖アルキル基を有する基であることがより好ましく、炭素数8〜15の直鎖アルキル基又は炭素数8〜15の直鎖アルキル基を有する基であることがより好ましい。
また、アルキル基又はアルキル部分の導電性化合物全体に対するファンデルワールス体積比は、5〜60%であることが好ましく、10〜50%であることがより好ましく、15〜50%であることが更に好ましい。
The aromatic hydrocarbon ring constituting Z includes, for example, phenyl, biphenyl, naphthalene, anthracene, tetracene, pentacene, hexacene, heptacene, acenaphthene, naphthacene, azulene, phenalene, benzoanthracene, phenanthrene, chrysene, antanthrene, pyrantrene, Indenoindene, picene, triphenylene, perylene, naphthoperylene, coronene, ovalene, pyrene, benzopyrene, hexahelicene, heptahelene, octahelicene, nonahelicene, decahelicen, undecahelense, dodecahelicene etc .; tetraphen, pentaphen, hexaphen, heptaphen, octaphene, nonaphen , Decaphene, undecaphene, dodecaphene, C60 fullerenes, C70 fullerenes, etc. , Biphenyl, naphthalene is preferable. Examples of the aromatic heterocycle include furyl, thiophene, thienyl, thienylene, tenyl, pyridyl, imidazolyl, morpholino, benzothienyl, benzophenyl and the like. Examples of these aromatic hydrocarbon rings or alkyl groups for optionally substituting aromatic heterocycles or substituents having an alkyl group include the groups described for R in formulas (1) and (2), and carbon The linear alkyl group of several 1-15 is preferable. Moreover, substituents having an alkyl group or an alkyl group representing R 3 can also be a group described by R in formula (1) and (2). Preferably, R 3 in one set of opposing positions is a group having a linear alkyl group having 1 to 30 carbon atoms or a linear alkyl group having 1 to 30 carbon atoms, and preferably having 5 to 20 carbon atoms It is more preferable that it is a chain alkyl group or a group having a linear alkyl group having 5 to 20 carbon atoms, and is a group having a linear alkyl group having 8 to 15 carbon atoms or a linear alkyl group having 8 to 15 carbon atoms Is more preferred.
The van der Waals volume ratio of the alkyl group or the alkyl moiety to the entire conductive compound is preferably 5 to 60%, more preferably 10 to 50%, still more preferably 15 to 50%. preferable.
このようなポルフィリンを基本骨格とする導電性化合物としては、以下の一般式(10)〜(13)で表される化合物が好ましい。
式(10)、(11)、(12)又は(13)中、R47乃至R50は上記式(1)のRと同じであり、R47乃至R49は少なくとも1つのWに結合しており、R50は基本骨格の結合可能な位置に結合できるが、好ましくは少なくとも1つのWに結合しており、m1乃至m4は上記式(1)のmと同じである。m1、m2、m3又はm4が2以上の場合、複数のR47、R48、R49又はR50は異なっていても同じでもよい。R47乃至R50を構成するアルキル基又はアルキル基を有する置換基も、式(1)及び(2)のRで説明した基を挙げることができる。好ましくは、1組の対向する位置のR47、R48、R49又はR50が炭素数1〜20の直鎖アルキル基又は炭素数1〜20の直鎖アルキル基を有する基であることが好ましく、炭素数4〜15の直鎖アルキル基又は炭素数4〜15の直鎖アルキル基を有する基であることがより好ましく、炭素数8〜13の直鎖アルキル基又は炭素数8〜13の直鎖アルキル基を有する基であることがより好ましい。
また、アルキル基又はアルキル部分の導電性化合物全体に対するファンデルワールス体積比は、5〜60%であることが好ましく、10〜50%であることがより好ましい。特に15〜50%であることが好ましい。
As a conductive compound which makes such a porphyrin a basic skeleton, the compound represented by following General formula (10)-(13) is preferable.
In formulas (10), (11), (12) or (13), R 47 to R 50 are the same as R in the above formula (1), and R 47 to R 49 are bonded to at least one W R 50 can be bonded to a bondable position of the basic skeleton, but is preferably bonded to at least one W, and m 1 to m 4 are the same as m in the above formula (1). When m 1 , m 2 , m 3 or m 4 is 2 or more, the plurality of R 47 , R 48 , R 49 or R 50 may be different or the same. Examples of the alkyl group constituting R 47 to R 50 or a substituent having an alkyl group can also include the groups described for R in formulas (1) and (2). Preferably, R 47 , R 48 , R 49 or R 50 in one set of opposing positions is a linear alkyl group having 1 to 20 carbon atoms or a group having a linear alkyl group having 1 to 20 carbon atoms More preferably, it is a group having a C 4-15 linear alkyl group or a C 4-15 linear alkyl group, and a C 8-13 linear alkyl group or a C 8-13 It is more preferable that it is a group having a linear alkyl group.
Moreover, it is preferable that it is 5 to 60%, and, as for the van der Waals volume ratio with respect to the whole electroconductive compound of an alkyl group or an alkyl part, it is more preferable that it is 10 to 50%. In particular, 15 to 50% is preferable.
このようなポルフィリン構造を基本骨格とする導電性化合物は、例えば、アルキル基又はアルキル部分を炭素数4〜15の直鎖アルキル基又は炭素数4〜15の直鎖アルキル基を有する基とした場合の構造相転移は30〜120℃の温度領域において生じる。そのため、例えば30〜150℃での使用が想定される場合、アルキル基又はアルキル部分を炭素数4〜15の直鎖アルキル基又は炭素数4〜15の直鎖アルキル基を有する基とすることが好ましい。 In a conductive compound having such a porphyrin structure as a basic skeleton, for example, when the alkyl group or the alkyl moiety is a group having a linear alkyl group having 4 to 15 carbon atoms or a linear alkyl group having 4 to 15 carbon atoms Structural phase transition occurs in the temperature range of 30 to 120 ° C. Therefore, when use at, for example, 30 to 150 ° C. is assumed, the alkyl group or alkyl moiety may be a linear alkyl group having 4 to 15 carbon atoms or a group having a linear alkyl group having 4 to 15 carbon atoms preferable.
(2)へテロアセンを基本骨格とする導電性化合物
式(3)中、Yはそれぞれ独立して、S、Se、SO2、O、N(R51)、Si(R51)(R52)を表し、R51及びR52はそれぞれ独立して、水素原子、置換基を表し、好ましい置換基としてはアリール基、単環式芳香族複素環残基;アルキル基又は芳香族環残基で置換されたアミノ基、アルキルオキシ基、アルキルチオキシ基、エステル基、カルバモイル基、アセトアミド、チオ基又はアシル基;ハロゲン原子、ニトロ基、又はシアノ基である。アリール基としては、フェニル基、ビフェニル基、ナフチル基等が挙げられ、単環式芳香族複素環残基としては、フリル基、チエニル基、チエニレン基、テニル基、ピリジル基、ピペリジル基、キノリル基、イソキノリル基、イミダゾリル基、モルホリノ基、ベンゾチエニル基、ベンゾフェニル基等が挙げられ、ハロゲン原子としては、フッ素原子、塩素原子、臭素原子等が挙げられる。Yは、好ましくはS又はSeであり、特に好ましくはSである。
Z1及びZ2はそれぞれ独立して、アルキル基又はアルキル基を有する置換基、或いはアルキル基又はアルキル基を有する置換基で置換された芳香族炭化水素環又は芳香族複素環を表し、Z1及びZ2は同じでも異なっても良い。
芳香族炭化水素環としては、例えば、単環式、又は複数の環が連結又は縮合した芳香族炭化水素環を挙げることができる。単環式芳香族炭化水素環としては、例えば炭素数3〜7、好ましくは4〜6の芳香族炭化水素環を挙げることができる。また、複数の環が連結又は縮合した芳香族炭化水素環としては、炭素数3〜7、好ましくは4〜6の芳香族炭化水素環が2以上(例えば2〜7個、2〜5個、又は2〜3個)連結又は縮合した構造を挙げることができる。具体的な芳香族炭化水素環の例としては、例えばフェニル、ビフェニル、ナフチル、アントラセン、テトラセン、ペンタセン、フェナントレン、クリセン、トリフェニレン、テトラフェン、ピレン、ピセン、ペンタフェン、ペリレン、ヘリセン、コロネン等を挙げることができる。芳香族複素環としては、例えばフリル、チオフェン、チエニル、チエニレン、テニル、ピリジル、イミダゾリル、モルホリノ、ベンゾチエニル、ベンゾフェニル等を挙げることができる。
アルキル基又はアルキル基を有する置換基としては、式(1)及び(2)のRで説明した基を挙げることができる。好ましくは、炭素数1〜30の直鎖アルキル基又は炭素数1〜30の直鎖アルキル基を有する基であることが好ましく、炭素数1〜20の直鎖アルキル基又は炭素数1〜20の直鎖アルキル基を有する基であることがより好ましく、炭素数5〜15の直鎖アルキル基又は炭素数5〜15の直鎖アルキル基を有する基であることがより好ましい。
また、アルキル基又はアルキル部分の導電性化合物全体に対するファンデルワールス体積比は5〜80%であることが好ましく、25〜60%であることがより好ましく、30〜60%であることが更に好ましい。
(2) Conductive compounds having heteroacene as a basic skeleton
In formula (3), Y each independently represents S, Se, SO 2 , O, N (R 51 ), Si (R 51 ) (R 52 ), and R 51 and R 52 each independently represent And a hydrogen atom and a substituent, and preferred examples of the substituent include an aryl group and a monocyclic aromatic heterocyclic residue; an amino group substituted with an alkyl group or an aromatic ring residue, an alkyloxy group and an alkylthioxy group, It is an ester group, a carbamoyl group, an acetamide, a thio group or an acyl group; a halogen atom, a nitro group or a cyano group. Examples of the aryl group include phenyl, biphenyl and naphthyl groups. Examples of the monocyclic aromatic heterocyclic residue include furyl, thienyl, thienylene, tenyl, pyridyl, piperidyl and quinolyl groups. And isoquinolyl group, imidazolyl group, morpholino group, benzothienyl group, benzophenyl group and the like, and as the halogen atom, fluorine atom, chlorine atom, bromine atom and the like can be mentioned. Y is preferably S or Se, particularly preferably S.
Z 1 and Z 2 each independently represent an alkyl group or a substituent having an alkyl group, or aromatic hydrocarbon ring or aromatic heterocycle substituted by a substituent having an alkyl group or an alkyl group, Z 1 And Z 2 may be the same or different.
As an aromatic hydrocarbon ring, the monocyclic hydrocarbon or the aromatic hydrocarbon ring which several rings connected or condensed can be mentioned, for example. Examples of monocyclic aromatic hydrocarbon rings include aromatic hydrocarbon rings having 3 to 7 carbon atoms, preferably 4 to 6 carbon atoms. In addition, as an aromatic hydrocarbon ring in which a plurality of rings are linked or condensed, an aromatic hydrocarbon ring having 3 to 7 carbon atoms, preferably 4 to 6 carbon atoms, is preferably 2 or more (for example, 2 to 7 or 2 to 5) Or 2-3) linked or condensed structures can be mentioned. Specific examples of the aromatic hydrocarbon ring include, for example, phenyl, biphenyl, naphthyl, anthracene, tetracene, pentacene, phenanthrene, chrysene, triphenylene, tetraphen, pyrene, pyrene, picene, pentacene, perylene, helicene, coronene and the like. Can. Examples of the aromatic heterocycle include furyl, thiophene, thienyl, thienylene, tenyl, pyridyl, imidazolyl, morpholino, benzothienyl, benzophenyl and the like.
As a substituent which has an alkyl group or an alkyl group, the group demonstrated by R of Formula (1) and (2) can be mentioned. Preferably, it is a group having a linear alkyl group having 1 to 30 carbon atoms or a linear alkyl group having 1 to 30 carbon atoms, and a linear alkyl group having 1 to 20 carbon atoms or 1 to 20 carbon atoms It is more preferable that it is a group which has a linear alkyl group, and it is more preferable that it is a group which has a C5-C15 linear alkyl group or a C5-C15 linear alkyl group.
In addition, the van der Waals volume ratio of the alkyl group or the alkyl moiety to the entire conductive compound is preferably 5 to 80%, more preferably 25 to 60%, and still more preferably 30 to 60%. .
このようなヘテロアセンを基本骨格とする導電性化合物としては、以下の化合物が好ましい
(2−1)BTBT又はそれに類似する構造を基本骨格とする導電性化合物
式(6)中、X1及びX2は式(3)のYと同じであり、好ましくはS又はSeであり、特に好ましくはSである。R1及びR2の少なくとも1つ、好ましくは両方、上記式(1)及び(2)のRで説明したアルキル基又はアルキル基を有する置換基と同じでよい。もっとも、式(6)の化合物では、炭素数1〜15の直鎖アルキル基又は炭素数1〜15の直鎖アルキル基を有する基であることが好ましく、炭素数6〜12の直鎖アルキル基又は炭素数6〜12の直鎖アルキル基を有する基であることがより好ましい。
また、アルキル基又はアルキル部分の導電性化合物全体に対するファンデルワールス体積比は5〜80%であることが好ましく、25〜60%であることがより好ましく、30〜60%であることが更に好ましい。
このような構造を基本骨格とする導電性化合物は、例えば、アルキル基又はアルキル部分を炭素数5〜12の直鎖アルキル基又は炭素数5〜12の直鎖アルキル部分とした場合の構造相転移は70〜120℃の温度領域において生じる。そのため、例えば50℃〜150℃での使用が想定される場合には、アルキル基又はアルキル部分を炭素数5〜12の直鎖アルキル基又は炭素数5〜12の直鎖アルキル部分とすることが好ましい。
なお、式(6)の化合物は、例えばWO2008/047896に記載の方法で製造することができ、その内容を参照により本願明細書に組み込む。
As the conductive compound having such heteroacene as a basic skeleton, the following compounds are preferable: (2-1) BTBT or a conductive compound having a structure similar thereto is preferable.
In formula (6), X 1 and X 2 are the same as Y in formula (3), preferably S or Se, particularly preferably S. At least one of R 1 and R 2 , preferably both, may be the same as the alkyl group described for R in the above formulas (1) and (2) or a substituent having an alkyl group. However, in the compound of Formula (6), it is preferable that it is a group which has a C1-C15 linear alkyl group or a C1-C15 linear alkyl group, and a C6-C12 linear alkyl group Or a group having a linear alkyl group having 6 to 12 carbon atoms is more preferable.
In addition, the van der Waals volume ratio of the alkyl group or the alkyl moiety to the entire conductive compound is preferably 5 to 80%, more preferably 25 to 60%, and still more preferably 30 to 60%. .
A conductive compound having such a structure as a basic skeleton is, for example, a structural phase transition when the alkyl group or alkyl moiety is a linear alkyl group having 5 to 12 carbon atoms or a linear alkyl moiety having 5 to 12 carbon atoms. Occurs in the temperature range of 70-120.degree. Therefore, when use at 50 ° C. to 150 ° C., for example, is assumed, the alkyl group or alkyl moiety may be a linear alkyl group having 5 to 12 carbon atoms or a linear alkyl moiety having 5 to 12 carbon atoms preferable.
The compounds of the formula (6) can be produced, for example, by the method described in WO2008 / 047896, the contents of which are incorporated herein by reference.
(2−2)DNTT又はそれに類似する構造を基本骨格とする導電性化合物
式(7)中、X1及びX2は上記式(3)のYと同じであり、好ましくはS又はSeであり、特に好ましくはSである。R3乃至R14は、水素、又は上記式(1)及び(2)のRで説明したアルキル基又はアルキル基を有する置換基であり、R3乃至R14の少なくとも1つは、上記式(1)及び(2)のRで説明したアルキル基又はアルキル基を有する置換基である。もっとも、式(7)の化合物では、R4及至R7、及びR10及至R13の何れかは、アルキル基又はアルキル基を有する置換基であることが好ましく、特にR6及びR12、又はR5及びR11に位置することがより好ましい。また、アルキル基又はアルキル基を有する置換基としては、炭素数1〜20の直鎖アルキル基又は炭素数1〜20の直鎖アルキル基を有する基であることが好ましく、炭素数4〜16の直鎖アルキル基又は炭素数4〜16の直鎖アルキル基を有する基であることがより好ましく、炭素数6〜12の直鎖アルキル基又は炭素数6〜12の直鎖アルキル基を有する基であることがより好ましい。
また、アルキル基又はアルキル部分の導電性化合物全体に対するファンデルワールス体積比は5〜80%であることが好ましく、25〜60%であることがより好ましく、30〜60%であることが更に好ましい。
このような構造を基本骨格とする導電性化合物は、例えば、アルキル基又はアルキル部分を炭素数6〜12の直鎖アルキル基又は炭素数6〜12の直鎖アルキル部分とした場合の構造相転移は100〜140℃の温度領域において生じる。そのため、例えば80℃〜150℃での使用が想定される場合には、アルキル基又はアルキル部分を炭素数6〜12の直鎖アルキル基又は炭素数6〜12の直鎖アルキル部分とすることが好ましい。
なお、式(7)の化合物は、例えばWO/2010/098372に記載の方法で製造することができ、その内容を参照により本願明細書に組み込む。
(2-2) A conductive compound having a basic structure of DNTT or a similar structure thereto
In the formula (7), X 1 and X 2 are the same as Y in the above formula (3), preferably S or Se, and particularly preferably S. R 3 to R 14 are hydrogen, or the alkyl having the alkyl group or alkyl group described in R of the above formulas (1) and (2), or a substituent having an alkyl group, and at least one of R 3 to R 14 has the above formula ( It is a substituent which has the alkyl group or alkyl group demonstrated by R of 1) and (2). However, in the compound of the formula (7), any one of R 4 to R 7 and R 10 to R 13 is preferably an alkyl group or a substituent having an alkyl group, in particular R 6 and R 12 or More preferably, they are located at R 5 and R 11 . The substituent having an alkyl group or an alkyl group is preferably a linear alkyl group having 1 to 20 carbon atoms or a group having a linear alkyl group having 1 to 20 carbon atoms, and has 4 to 16 carbon atoms. A linear alkyl group or a group having a linear alkyl group having 4 to 16 carbon atoms is more preferable, and a linear alkyl group having 6 to 12 carbon atoms or a group having a linear alkyl group having 6 to 12 carbon atoms It is more preferable that
In addition, the van der Waals volume ratio of the alkyl group or the alkyl moiety to the entire conductive compound is preferably 5 to 80%, more preferably 25 to 60%, and still more preferably 30 to 60%. .
A conductive compound having such a structure as a basic skeleton is, for example, a structural phase transition when the alkyl group or the alkyl moiety is a linear alkyl group having 6 to 12 carbon atoms or a linear alkyl moiety having 6 to 12 carbon atoms. Occurs in the temperature range of 100-140.degree. Therefore, when use at, for example, 80 ° C. to 150 ° C. is assumed, the alkyl group or alkyl moiety may be a linear alkyl group having 6 to 12 carbon atoms or a linear alkyl moiety having 6 to 12 carbon atoms preferable.
The compounds of the formula (7) can be produced, for example, by the method described in WO / 2010/098372, the contents of which are incorporated herein by reference.
(4)DATT又はそれに類似する構造を基本骨格とする導電性化合物
式(8)中、X1及びX2は上記式(3)のYと同じであり、好ましくはS又はSeであり、特に好ましくはSである。R15乃至R30は、水素、又は上記式(1)及び(2)のRで説明したアルキル基又はアルキル基を有する置換基であり、R15乃至R30の少なくとも1つは、Rで説明したアルキル基又はアルキル基を有する置換基である。もっとも、式(8)の化合物では、R15乃至R30中、R18及びR26は、上記式(1)及び(2)のRで説明したアルキル基又はアルキル基を有する置換基であり、他は、水素であることが好ましい。また、アルキル基又はアルキル基を有する置換基としては、炭素数1〜25の直鎖アルキル基又は炭素数1〜25の直鎖アルキル基を有する基であることが好ましく、炭素数5〜20の直鎖アルキル基又は炭素数5〜20の直鎖アルキル基を有する基であることがより好ましく、炭素数6〜15の直鎖アルキル基又は炭素数6〜15の直鎖アルキル基を有する基であることがより好ましい。
また、アルキル基又はアルキル部分の導電性化合物全体に対するファンデルワールス体積比は5〜80%であることが好ましく、25〜60%であることがより好ましく、30〜60%であることが更に好ましい。
このような構造を基本骨格とする導電性化合物は、例えば、アルキル基又はアルキル部分を炭素数6〜15の直鎖アルキル基又は炭素数6〜15の直鎖アルキル部分とした場合の構造相転移は100〜140℃の温度領域に生じる。そのため、例えば80℃〜150℃での使用が想定される場合には、アルキル基又はアルキル部分を炭素数6〜15の直鎖アルキル基又は炭素数6〜15の直鎖アルキル部分とすることが好ましい。
なお、式(8)の化合物は、例えばWO2008/050726に記載の方法で製造することができ、その内容を参照により本願明細書に組み込む。
(4) A conductive compound having as a basic skeleton a structure similar to that of DATT
In the formula (8), X 1 and X 2 are the same as Y in the above formula (3), preferably S or Se, and particularly preferably S. R 15 to R 30 is hydrogen, or a substituent having an alkyl group or an alkyl group described for R in the formula (1) and (2), at least one of R 15 to R 30 are described in R A substituted alkyl group or a substituent having an alkyl group. However, in the compounds of the formula (8), in R 15 to R 30 , R 18 and R 26 are the alkyl group described in R of the above formulas (1) and (2) or a substituent having an alkyl group, The other is preferably hydrogen. In addition, as the substituent having an alkyl group or an alkyl group, a linear alkyl group having 1 to 25 carbon atoms or a group having a linear alkyl group having 1 to 25 carbon atoms is preferable, and 5 to 20 carbon atoms are preferable. A linear alkyl group or a group having a linear alkyl group having 5 to 20 carbon atoms is more preferable, and a linear alkyl group having 6 to 15 carbon atoms or a group having a linear alkyl group having 6 to 15 carbon atoms It is more preferable that
In addition, the van der Waals volume ratio of the alkyl group or the alkyl moiety to the entire conductive compound is preferably 5 to 80%, more preferably 25 to 60%, and still more preferably 30 to 60%. .
A conductive compound having such a structure as a basic skeleton is, for example, a structural phase transition when the alkyl group or the alkyl moiety is a linear alkyl group having 6 to 15 carbon atoms or a linear alkyl moiety having 6 to 15 carbon atoms. Occurs in the temperature range of 100-140.degree. Therefore, when use at, for example, 80 ° C. to 150 ° C. is assumed, the alkyl group or alkyl moiety may be a linear alkyl group having 6 to 15 carbon atoms or a linear alkyl moiety having 6 to 15 carbon atoms preferable.
The compounds of the formula (8) can be produced, for example, by the method described in WO2008 / 050726, the contents of which are incorporated herein by reference.
(4)DCTT又はそれに類似する構造を基本骨格とする導電性化合物
式(9)中、X1及びX2は上記式(3)のYと同じであり、好ましくはS又はSeであり、特に好ましくはSである。R31乃至R46は、水素、又は上記式(1)及び(2)のRで説明したアルキル基又はアルキル基を有する置換基であり、R31乃至R46の少なくとも1つは、Rで説明したアルキル基又はアルキル基を有する置換基である。もっとも、式(9)の化合物では、R31乃至R46中、R34及びR41は、上記式(1)及び(2)のRで説明したアルキル基又はアルキル基を有する置換基であり、他は水素であることが好ましい。また、アルキル基又はアルキル基を有する置換基としては、炭素数1〜25の直鎖アルキル基又は炭素数1〜25の直鎖アルキル基を有する基であることが好ましく、炭素数5〜20の直鎖アルキル基又は炭素数5〜20の直鎖アルキル基を有する基であることがより好ましく、炭素数6〜15の直鎖アルキル基又は炭素数6〜15の直鎖アルキル基を有する基であることがより好ましい。
また、アルキル基又はアルキル部分の導電性化合物全体に対するファンデルワールス体積比は、5〜60%であることが好ましく、10〜50%であることがより好ましい。特に15〜50%であることが好ましい。
このような構造を基本骨格とする導電性化合物は、上述の通り、アルキル基又はアルキル部分の長さを調整することで、熱電変換材料の構造転移の温度の制御や熱運動の制御が可能と考えられ、例えば70℃〜150℃での使用が想定される場合には、アルキル基又はアルキル部分を炭素数6〜15の直鎖アルキル基又は炭素数6〜15の直鎖アルキル部分とすることが好ましい。
なお、式(9)の化合物は、例えばWO2008/050726に記載の方法で製造することができ、その内容を参照により本願明細書に組み込む。
(4) Conductive compounds having a basic structure as a structure similar to that of DCTT
In the formula (9), X 1 and X 2 are the same as Y in the above formula (3), preferably S or Se, and particularly preferably S. R 31 to R 46 each represents hydrogen, or the alkyl group or the substituent having the alkyl group described in R of the above formulas (1) and (2), and at least one of R 31 to R 46 is described by R A substituted alkyl group or a substituent having an alkyl group. However, in the compound of the formula (9), in R 31 to R 46 , R 34 and R 41 are the alkyl group described in R of the above formulas (1) and (2) or a substituent having an alkyl group, The other is preferably hydrogen. Moreover, as a substituent having an alkyl group or an alkyl group, a linear alkyl group having 1 to 25 carbon atoms or a group having a linear alkyl group having 1 to 25 carbon atoms is preferable, and 5 to 20 carbon atoms are preferable. A linear alkyl group or a group having a linear alkyl group having 5 to 20 carbon atoms is more preferable, and a linear alkyl group having 6 to 15 carbon atoms or a group having a linear alkyl group having 6 to 15 carbon atoms It is more preferable that
Moreover, it is preferable that it is 5 to 60%, and, as for the van der Waals volume ratio with respect to the whole electroconductive compound of an alkyl group or an alkyl part, it is more preferable that it is 10 to 50%. In particular, 15 to 50% is preferable.
As described above, a conductive compound having such a structure as a basic skeleton can control the temperature of structural transition of the thermoelectric conversion material and control the thermal movement by adjusting the length of the alkyl group or the alkyl moiety. For example, when use at 70 ° C. to 150 ° C. is assumed, the alkyl group or alkyl moiety is a linear alkyl group having 6 to 15 carbon atoms or a linear alkyl moiety having 6 to 15 carbon atoms Is preferred.
The compounds of the formula (9) can be produced, for example, by the method described in WO2008 / 050726, the contents of which are incorporated herein by reference.
本発明の有機熱電変換材料は、任意選択で、ドーパントを含んでもよい。ドーパントとしては、例えば、スルホニウム塩、ヨードニウム塩、アンモニウム塩、カルボニウム塩、ホスホニウム塩等のオニウム塩化合物;カンファースルホン酸、ドデシルベンゼンスルホン酸、2−ナフタレンスルホン酸、トルエンスルホン酸や、2−ナフタレンスルホン酸等の有機酸;Cl2、Br2、I2、ICl、ICl3、IBr、IF等のハロゲン;PF5、AsF5、SbF5、BF3、BCl3、BBr3、SO3等のルイス酸;HF、HCl、HNO3、H2SO4、HClO4、燐酸等のプロトン酸;FeCl3、FeOCl、TiCl4、ZrCl4、HfCl4、NbF5、NbCl5、TaCl5、MoF5、WF6等の遷移金属化合物、Li、Na、K、Rb、Cs等のアルカリ金属、Ca、Sr、Ba等のアルカリ土類金属、Eu等のランタノイド、その他R4N+、R4P+、R4As+、R3S+(R:アルキル基)、アセチルコリンなどを挙げることができる。 The organic thermoelectric conversion material of the present invention may optionally contain a dopant. As the dopant, for example, onium salt compounds such as sulfonium salts, iodonium salts, ammonium salts, carbonium salts, phosphonium salts, etc .; camphorsulfonic acid, dodecylbenzenesulfonic acid, 2-naphthalenesulfonic acid, toluenesulfonic acid, 2-naphthalenesulfone Organic acids such as acids; halogens such as Cl 2 , Br 2 , I 2 , ICl, ICl 3 , IBr, IF etc .; Lewis such as PF 5 , AsF 5 , SbF 5 , BF 3 , BCl 3 , BBr 3 , SO 3 etc. Acids; Proton acids such as HF, HCl, HNO 3 , H 2 SO 4 , HClO 4 , phosphoric acid, etc .; FeCl 3 , FeOCl, TiCl 4 , ZrCl 4 , HfCl 4 , NbF 5 , NbCl 5 , TaCl 5 , MoF 5 , WF Transition metal compounds such as 6 ; alkali metals such as Li, Na, K, Rb and Cs; Lucal earth metals, lanthanides such as Eu, and others, such as R 4 N + , R 4 P + , R 4 As + , R 3 S + (R: alkyl group), acetylcholine and the like can be mentioned.
本発明においては、ドーパントは必須成分ではなく、有機熱電変換材料中、0〜60重量%含有することが好ましく、0〜20重量%含有することがより好ましい。 In the present invention, the dopant is not an essential component, and is preferably contained in an amount of 0 to 60% by weight, more preferably 0 to 20% by weight, in the organic thermoelectric conversion material.
本発明の熱電変換材料は、高い熱起電力を備えており、有機熱電変換素子の熱電変換材料として有用である。このため、本発明の熱電変換材料は、有機熱電変換素子の熱電変換層を形成するために効果的に用いることができる。従って、本発明の他の実施形態によれば、本発明の熱電変換材料の熱電変換層を形成するための使用、熱電変換材料を含む熱電変換層を有する熱電変換素子、及び熱電変換材料を含む熱電変換層によって熱電変換させる方法も提供される。 The thermoelectric conversion material of the present invention has a high thermoelectromotive force, and is useful as a thermoelectric conversion material of an organic thermoelectric conversion element. For this reason, the thermoelectric conversion material of the present invention can be effectively used to form the thermoelectric conversion layer of the organic thermoelectric conversion element. Therefore, according to another embodiment of the present invention, the use of the thermoelectric conversion material of the present invention for forming a thermoelectric conversion layer, a thermoelectric conversion element having a thermoelectric conversion layer containing a thermoelectric conversion material, and a thermoelectric conversion material Also provided is a method of thermoelectric conversion by the thermoelectric conversion layer.
本発明の熱電変換素子は、基材上に、第1の電極、熱電変換層および第2の電極を有し、熱電変換層は本発明の熱電変換材料を含有している。
本発明の熱電変換素子は、基材上に、第1の電極、熱電変換層および第2の電極を有するものであればよく、第1の電極および第2の電極と熱電変換層との位置関係等、その他の構成について特に限定されない。本発明の熱電変換素子において、熱電変換層は、その少なくとも一方の面に第1の電極および第2の電極に接するように配置されていればよい。基材に対して横方向に温度差がある場合が横型の熱電変換素子(図5)、基材に対して縦方向に温度差がある場合が縦型の熱電変換素子(図6)である。本発明の熱電変換素子における熱電変換層は、2つの電極に接するように配置されていればよく、この電極間に温度差を設けることにより起電力を発生する。
The thermoelectric conversion element of the present invention has a first electrode, a thermoelectric conversion layer and a second electrode on a base material, and the thermoelectric conversion layer contains the thermoelectric conversion material of the present invention.
The thermoelectric conversion element of the present invention only needs to have the first electrode, the thermoelectric conversion layer and the second electrode on the base material, and the positions of the first electrode and the second electrode and the thermoelectric conversion layer There is no particular limitation on the other configuration such as the relationship. In the thermoelectric conversion element of the present invention, the thermoelectric conversion layer may be disposed on at least one surface thereof so as to be in contact with the first electrode and the second electrode. When there is a temperature difference in the lateral direction with respect to the substrate, it is a horizontal thermoelectric conversion element (FIG. 5), and when there is a temperature difference in the vertical direction with respect to the substrate, it is a vertical thermoelectric conversion element (FIG. 6) . The thermoelectric conversion layer in the thermoelectric conversion element of the present invention may be disposed in contact with the two electrodes, and an electromotive force is generated by providing a temperature difference between the electrodes.
基材としては、ガラス、金属、プラスチックフィルム、不織布、紙等の電極及び熱電変換材料を保持できるものが用いることができる。デバイスにフレキシビリティーを与えるため、フレキシブルなプラスチックフィルムなどを用いることが好ましい。 As a base material, what can hold electrodes, such as glass, metal, a plastic film, a nonwoven fabric, and paper, and a thermoelectric conversion material can be used. In order to give the device flexibility, it is preferable to use a flexible plastic film or the like.
電極材料としてはITO等の透明電極、金、銀、銅、アルミニウム等の金属電極、カーボンナノチューブ、グラフェン等の炭素電極、PEDOT:PSS等の有機導電性材料などが挙げられ、熱電変換材料との接触抵抗の低い材料が好ましい。また熱電変換材料との接触抵抗を下げるためコンタクトドーピング等の処理をすることが可能である。 Examples of the electrode material include transparent electrodes such as ITO, metal electrodes such as gold, silver, copper and aluminum, carbon electrodes such as carbon nanotubes and graphene, and organic conductive materials such as PEDOT: PSS, etc. Materials with low contact resistance are preferred. Moreover, in order to reduce the contact resistance with the thermoelectric conversion material, it is possible to perform processing such as contact doping.
本発明の熱電変換素子の熱電変換層は本発明の熱電変換材料を用いる。熱電変換層は1層でもよく、複数の層であってもよい。本発明の熱電変換素子が複数の熱電変換層を有する場合、本発明の熱電変換材料を用いて形成された熱電変換層のみを複数層有する素子であっても良いし、本発明の熱電変換材料を用いて形成された熱電変換層と、本発明の熱電変換材料以外の熱電変換材料を用いて形成された熱電変換層を有する素子であっても良い。本発明の熱電変換材料は、上述の通り、素子を使用する温度に応じて最も高い熱起電力を発揮するように設計することができるので、使用温度に応じて、置換基の分子設計を適宜変更することができる。 The thermoelectric conversion layer of the thermoelectric conversion element of the present invention uses the thermoelectric conversion material of the present invention. The thermoelectric conversion layer may be a single layer or a plurality of layers. When the thermoelectric conversion element of the present invention has a plurality of thermoelectric conversion layers, it may be an element having only a plurality of thermoelectric conversion layers formed using the thermoelectric conversion material of the present invention, or the thermoelectric conversion material of the present invention It may be an element having a thermoelectric conversion layer formed by using a thermoelectric conversion layer and a thermoelectric conversion layer formed by using a thermoelectric conversion material other than the thermoelectric conversion material of the present invention. Since the thermoelectric conversion material of the present invention can be designed to exert the highest thermoelectromotive force according to the temperature at which the device is used, as described above, the molecular design of the substituent is appropriately selected according to the operating temperature. It can be changed.
本発明の熱電変換素子における熱電変換層等の製膜方法は特に限定されず、例えば、印刷などの溶液プロセスや真空プロセスなどの方法が挙げられる。デバイス製造コストを考慮すると溶液プロセスが好ましく、キャスティング、スピンコーティング、ディップコーティング、ブレードコーティング、ワイヤバーコーティング、スプレーコーティング等のコーティング法や、インクジェット印刷、スクリーン印刷、オフセット印刷、凸版印刷等の印刷法、ソフトリソグラフィー法等、さらにはこれらの手法を複数組み合わせた方法が挙げられる。 The film forming method of the thermoelectric conversion layer and the like in the thermoelectric conversion element of the present invention is not particularly limited, and examples thereof include methods such as a solution process such as printing and a vacuum process. Solution process is preferable in consideration of the device manufacturing cost, and coating methods such as casting, spin coating, dip coating, blade coating, wire bar coating, spray coating, and printing methods such as inkjet printing, screen printing, offset printing, and letterpress printing, Examples of the method include a soft lithography method and a method in which a plurality of these methods are combined.
上述の通り、本発明の熱電変換素子は、導電性化合物自体の高い熱起電力を通じて、高い熱電変換効率を達成することができ、高性能な有機熱電変換素子を提供する新たなアプローチを提供する。特に非常に高いゼーベック係数を有することから高電圧のデバイス設計が容易となり、特徴のある熱電変換素子を提供することが可能となる。 As described above, the thermoelectric conversion element of the present invention can achieve high thermoelectric conversion efficiency through the high thermoelectric power of the conductive compound itself, and provides a new approach for providing a high-performance organic thermoelectric conversion element . In particular, having a very high Seebeck coefficient facilitates high-voltage device design, making it possible to provide a characteristic thermoelectric conversion element.
以下、実施例に基づき本発明をより詳しく説明する。しかし、以下の実施例は本発明の技術的範囲を何ら限定するものではない。 Hereinafter, the present invention will be described in more detail based on examples. However, the following examples do not limit the technical scope of the present invention.
(合成例1)(6,20-Didodecyl-29H,3H-tetrabenzo[b,g,l,q] porphyrin)
アルゴン置換した反応容器にジピロメタン(0.30g,1.0mmol)を加え、ジクロロメタン(200ml)に溶解させた。ここにアルゴンガスを10分間バブリングした。ついでトリデカナール(0.3ml,1.1nnol)とトリフルオロ酢酸(TFA)(2滴)を順に加え、遮光下17時間撹拌した。ここに2,3−ジクロロ−5,6−ジシアノ−p−ベンゾキノン(DDQ)(0.35g)を加え、さらに2時間撹拌した。反応終了後、溶液が半量になるまで溶媒を除去し、アルミナカラムクロマトグラフィー(クロロホルム)を行った。さらにシリカゲルクロマトグラフィー(ジクロロメタン)及びGPCを用いて精製し、最後に再結晶(クロロホルム/メタノール)を行うことで、目的物を赤褐色個体として得た。収率:80%(389mg、0.405mmol) Dipyrromethane (0.30 g, 1.0 mmol) was added to a reaction vessel purged with argon and dissolved in dichloromethane (200 ml). Argon gas was bubbled for 10 minutes here. Then, tridecanal (0.3 ml, 1.1 nnol) and trifluoroacetic acid (TFA) (2 drops) were sequentially added and stirred for 17 hours under light blocking. 2,3-Dichloro-5,6-dicyano-p-benzoquinone (DDQ) (0.35 g) was added thereto, and the mixture was further stirred for 2 hours. After completion of the reaction, the solvent was removed until the solution reached half volume, and alumina column chromatography (chloroform) was performed. Further, purification was performed using silica gel chromatography (dichloromethane) and GPC, and finally recrystallization (chloroform / methanol) was performed to obtain the desired product as a reddish brown solid. Yield: 80% (389 mg, 0.405 mmol)
(合成例2) C12H25-H2BP
Synthesis Example 2 C 12 H 25 -H 2 BP
上記で得られたポルフィリンをガラスチューブオーブン中真空下、200℃で30分間加熱することによりベンゾポルフィリンが緑色個体として得られた。 Benzoporphyrin was obtained as a green solid by heating the porphyrin obtained above in a glass tube oven under vacuum at 200 ° C. for 30 minutes.
図2に示す通り、DSC(170−570K)により、320−360Kにシャープなピークとブロードなピークが認められ、440K付近にピークが認められ、構造相転移を生じていることが示された。 As shown in FIG. 2, by DSC (170-570 K), a sharp peak and a broad peak were observed at 320-360 K, and a peak was observed around 440 K, which indicated that a structural phase transition occurred.
(合成例3)29H,3H-tetrabenzo[b,g,l,q] porphine(BP、LUMO:−2.26eV、HOMO:−4.69eV ALDRICH社製)。
図3に示す通り、DSC(170−570K)には、明確なピークが認められなかった。
(合成例4)C8BTBTの合成
(1)2,7-Di(1-octynyl1)[1]benzothieno[3,2-b][1]benzothiopheneの合成
Synthesis Example 3 29H, 3H-tetrabenzo [b, g, l, q] porphine (BP, LUMO: -2.26 eV, HOMO: -4.69 eV, manufactured by ALDRICH).
As shown in FIG. 3, no clear peak was observed in DSC (170-570 K).
Synthesis Example 4 Synthesis of C8BTBT (1) Synthesis of 2,7-Di (1-octynyl1) [1] benzothieno [3,2-b] [1] benzothiophene
窒素雰囲気下、2,7−ジヨードベンゾチエノベンゾチオフェン(1.0g,2.0mmol)を無水ジイソプロピルアミン(15ml)と無水ベンゼン(15ml)に溶解後、脱気を30分行った。10mol% PdCl2(PPh3)2(140mg)、20mol% CuI(76mg)、1−octyne(0.81ml,5.5mmol)を加え8時間室温で攪拌した。攪拌終了後、水(30ml)を加え、クロロホルム(30ml×3)で抽出した。抽出液を水(100ml×3)で洗浄後、無水硫酸マグネシウムで乾燥した。溶媒を減圧下で留去し、カラムクロマトグラフィー(シリカゲル、塩化メチレン:へキサン=1:3、Rf=0.6)により精製し、ヘキサンから再結晶することで上記式で表される目的化合物の無色板状晶を得た(収量710mg、収率77%)。 Under a nitrogen atmosphere, 2,7-diiodobenzothienobenzothiophene (1.0 g, 2.0 mmol) was dissolved in anhydrous diisopropylamine (15 ml) and anhydrous benzene (15 ml) and degassed for 30 minutes. 10 mol% PdCl2 (PPh3) 2 (140 mg), 20 mol% CuI (76 mg), 1-octyne (0.81 ml, 5.5 mmol) were added and stirred at room temperature for 8 hours. After completion of the stirring, water (30 ml) was added and extracted with chloroform (30 ml × 3). The extract was washed with water (100 ml × 3) and then dried over anhydrous magnesium sulfate. The solvent is distilled off under reduced pressure, the residue is purified by column chromatography (silica gel, methylene chloride: hexane = 1: 3, Rf = 0.6), and the target compound represented by the above formula by recrystallization from hexane Colorless plate crystals (yield 710 mg, 77%).
(2) 2,7-Dioctyl[1]benzothieno[3,2-b][1]benzothiopheneの合成 (2) Synthesis of 2,7-Dioctyl [1] benzothieno [3,2-b] [1] benzothiophene
得られた化合物(300mg,0.66mmol)、Pd/C(70mg)を無水トルエン(10mL)に加え、アスピレーターによる減圧−水素パージを数回繰り返した後、8時間攪拌した。反応終了後溶媒を留去し、カラムクロマトグラフィー(シリカゲル、へキサン、Rf=0.6)により精製し(収量286mg、収率94%)、ヘキサンから再結晶することで、目的化合物の無色粉末固体を得た(収量250mg、収率82%)。 The obtained compound (300 mg, 0.66 mmol) and Pd / C (70 mg) were added to anhydrous toluene (10 mL), vacuum-hydrogen purge with an aspirator was repeated several times, and the mixture was stirred for 8 hours. After completion of the reaction, the solvent is distilled off, and the residue is purified by column chromatography (silica gel, hexane, Rf = 0.6) (yield 286 mg, 94% yield) and recrystallized from hexane to give a colorless powder of the target compound. A solid was obtained (yield 250 mg, 82%).
(実施例)
各実施例において、各化合物を用いた有機熱電変換素子を作製し、特性を評価した。評価装置として、自家製超高抵抗試料対応熱電特性評価装置を用いた。前記特性評価装置は、超高真空チャンバー中において、(1)クヌーセンセルによる昇華性材料の精密蒸着、(2)ケースレー6430ソースメーターを利用した1014Ω程度を上限とする試料抵抗測定、および、(3)自家製高入力インピーダンス差動増幅回路を利用した1013Ω程度の試料抵抗を上限とする高精度ゼーベック係数測定、を行う機能を有する。(非特許文献:中村, 応用物理 82 (2013) 954を参照)
(Example)
In each Example, the organic thermoelectric conversion element using each compound was produced, and the characteristic was evaluated. As an evaluation device, a home-made super high resistance sample-based thermoelectric characteristic evaluation device was used. The above-mentioned characterization apparatus includes (1) precise deposition of a sublimable material by Knudsen cell, (2) sample resistance measurement with an upper limit of about 10 14 Ω using a Keithley 6430 source meter, in an ultra-high vacuum chamber, (3) It has a function of performing high-precision Seebeck coefficient measurement with a sample resistance of about 10 13 Ω or more using a home-made high input impedance differential amplifier circuit. (See Non-Patent Literature: Nakamura, Applied Physics 82 (2013) 954)
(実施例1) 化合物(C12BP)を用いた熱電変換素子の作製・評価
本実施例において、合成例1で合成した化合物を用いた有機熱電変換素子を作製して、特性を評価した。
電極作製用シャドウマスクを取り付けた白板ガラスを真空蒸着装置内に設置し、装置内の真空度が1.0×10−4Pa以下になるまで排気した。抵抗加熱蒸着法によって、金を0.1Å/secの蒸着速度で30nmの厚さに蒸着し、電極付き基板を得た。
本基板にシャドウマスクを取り付けたうえで熱電対及び電極への配線を行い、前記特性評価装置内に設置し、装置内の真空度が1.0×10−4Pa以下になるまで排気し、抵抗加熱蒸着法によって、化合物(C12BP)の薄膜(160nm)を形成し、本発明の熱電変換素子(電極間の距離:10mm、電極の幅:7.6mm)を得た。
得られた熱電変換素子は、装置内の真空度が1.0×10−5Pa以下の条件で温度を定めて電圧を印加、電流値を読み取り、導電率を計測した。また電極間に温度勾配を設け、熱起電力値を読み取ることでゼーベック係数を測定した。
その結果、340Kでの導電率は3.0×10−8Scm−1であり、ゼーベック係数は123mV/Kであった。また、図1に示す通り、C12BPの側鎖のファンデルワールス体積比は50%(Winmostarソフトを使用した)であった。
Example 1 Production and Evaluation of Thermoelectric Conversion Element Using Compound (C12BP) In this example, an organic thermoelectric conversion element was produced using the compound synthesized in Synthesis Example 1, and the characteristics were evaluated.
The white plate glass to which the shadow mask for electrode preparation was attached was installed in a vacuum evaporation system, and it evacuated until the degree of vacuum in an apparatus became 1.0 * 10 <-4> Pa or less. Gold was deposited to a thickness of 30 nm at a deposition rate of 0.1 Å / sec by resistance heating deposition to obtain a substrate with an electrode.
Wire a thermocouple and electrodes after attaching a shadow mask to this substrate, install it in the characterization device, and evacuate it until the degree of vacuum in the device is 1.0 x 10 -4 Pa or less, A thin film (160 nm) of a compound (C12BP) was formed by resistance heating vapor deposition to obtain a thermoelectric conversion element (distance between electrodes: 10 mm, width of electrodes: 7.6 mm) of the present invention.
The temperature of the obtained thermoelectric conversion element was determined under the condition that the degree of vacuum in the device was 1.0 × 10 −5 Pa or less, a voltage was applied, the current value was read, and the conductivity was measured. In addition, a temperature gradient was provided between the electrodes, and the Seebeck coefficient was measured by reading the thermoelectromotive force value.
As a result, the conductivity at 340 K was 3.0 × 10 −8 Scm −1 and the Seebeck coefficient was 123 mV / K. Further, as shown in FIG. 1, the van der Waals volume ratio of the side chain of C12BP was 50% (Winmostar software was used).
(実施例2) 化合物(C8−BTBT)を用いた熱電変換素子の作製・評価
実施例1で用いた化合物の代わりに合成例2で合成した化合物(C8−BTBT)を用いて有機熱電変換素子を作製し、評価した。
白板ガラス基板に0.5wt%C8−BTBTのヘプタン溶液を滴下、スピンコート(1000rpm×1min)製膜し、乾燥して有機薄膜(30nm)基板を得た。この有機薄膜基板に電極形成用シャドウマスクを取り付け、真空蒸着装置内に設置し、装置内の真空度が1.0×10−4Pa以下になるまで排気した。抵抗加熱蒸着法によって、金を0.1Å/secの蒸着速度で30nmの厚さに蒸着し、熱電変換素子(電極間の距離:5mm、電極の幅:7.6mm)を得た。
本素子に熱電対及び電極への配線を行い、前記評価装置内に設置し、装置内の真空度が1.0×10−5Pa以下の条件で温度を定めて電圧を印加、電流値を読み取り、導電率を計測した。また電極間に温度勾配を設け、熱起電力値を読み取ることでゼーベック係数を測定した。
その結果、340Kでの導電率は2.1×10−8Scm−1であり、ゼーベック係数は190mV/Kであった。
Example 2 Preparation and Evaluation of Thermoelectric Conversion Device Using Compound (C8-BTBT) Organic Thermoelectric Conversion Device Using Compound (C8-BTBT) Synthesized in Synthesis Example 2 Instead of the Compound Used in Example 1 Were evaluated.
A heptane solution of 0.5 wt% C8-BTBT was dropped onto a white sheet glass substrate, spin-coated (1000 rpm x 1 min) was formed, and dried to obtain an organic thin film (30 nm) substrate. A shadow mask for electrode formation was attached to the organic thin film substrate, placed in a vacuum evaporation system, and evacuated until the degree of vacuum in the system became 1.0 × 10 −4 Pa or less. Gold was deposited to a thickness of 30 nm at a deposition rate of 0.1 Å / sec by resistance heating deposition to obtain a thermoelectric conversion element (distance between electrodes: 5 mm, width of electrodes: 7.6 mm).
Wire the thermocouple and electrodes to this element, install in the evaluation device, determine the temperature under the condition that the degree of vacuum in the device is 1.0 x 10 -5 Pa or less, apply the voltage, and read the current value The conductivity was measured. In addition, a temperature gradient was provided between the electrodes, and the Seebeck coefficient was measured by reading the thermoelectromotive force value.
As a result, the conductivity at 340 K was 2.1 × 10 −8 Scm −1 and the Seebeck coefficient was 190 mV / K.
実施例2で得られた(C8−BTBT)では、DSC(170−570K)により、380K付近に2本と400Kにシャープなピークが認められ構造相転移を生じていることが示された。
また、図1に示す通り、C8BTBTの側鎖のファンデルワールス体積比は60%であった。
In (C8-BTBT) obtained in Example 2, two peaks at around 380 K and a sharp peak at 400 K were observed by DSC (170-570 K), indicating that a structural phase transition occurred.
In addition, as shown in FIG. 1, the van der Waals volume ratio of the side chain of C8BTBT was 60%.
(実施例3) 化合物(C10DNTT)を用いた熱電変換素子の作製・評価
実施例1にて用いた化合物の代わりに化合物(C10DNTT)を用いて有機熱電変換素子を作製し、評価した。
電極作製用シャドウマスクを取り付けた白板ガラスを真空蒸着装置内に設置し、装置内の真空度が1.0×10−4Pa以下になるまで排気した。抵抗加熱蒸着法によって、金を0.1Å/secの蒸着速度で30nmの厚さに蒸着し、電極付き基板を得た。
本基板にシャドウマスクを取り付けたうえで熱電対及び電極へ配線を行い、前記評価装置内に設置し、装置内の真空度が1.0×10−4Pa以下になるまで排気し、抵抗加熱蒸着法によって、0.5Å/secの蒸着速度で化合物(C10DNTT)の薄膜(20nm)を形成し、本発明の熱電変換素子(電極間の距離:5mm、電極の幅:7.6mm)を得た。
得られた熱電変換素子は、装置内の真空度が1.0×10−5Pa以下の条件で温度を定めて電圧を印加、電流値を読み取り、導電率を計測した。また電極間に温度勾配を設け、熱起電力値を読み取ることでゼーベック係数を測定した。
その結果、315Kでの導電率は1.1×10−7Scm−1であり、ゼーベック係数は128mV/Kであった。
また、図1に示す通り、C10DNTTの側鎖のファンデルワールス体積比は57%であった。図4に示す通り、実施例1で得られたC10DNTTでは、DSC(170−620K)により、390K、500K、570K及び580Kにそれぞれシャープなピークが認められ、構造相転移を生じていることが示された。
Example 3 Production and Evaluation of Thermoelectric Conversion Device Using Compound (C10 DNTT) An organic thermoelectric conversion device was produced using compound (C10 DNTT) instead of the compound used in Example 1 and evaluated.
The white plate glass to which the shadow mask for electrode preparation was attached was installed in a vacuum evaporation system, and it evacuated until the degree of vacuum in an apparatus became 1.0 * 10 <-4> Pa or less. Gold was deposited to a thickness of 30 nm at a deposition rate of 0.1 Å / sec by resistance heating deposition to obtain a substrate with an electrode.
Attach a shadow mask to this substrate, wire to thermocouples and electrodes, install in the evaluation device, evacuate the vacuum in the device to 1.0 × 10 -4 Pa or less, and resistance heating A thin film (20 nm) of a compound (C10 DNTT) is formed at a deposition rate of 0.5 Å / sec by vapor deposition to obtain a thermoelectric conversion element (distance between electrodes: 5 mm, width of electrode: 7.6 mm) of the present invention The
The temperature of the obtained thermoelectric conversion element was determined under the condition that the degree of vacuum in the device was 1.0 × 10 −5 Pa or less, a voltage was applied, the current value was read, and the conductivity was measured. In addition, a temperature gradient was provided between the electrodes, and the Seebeck coefficient was measured by reading the thermoelectromotive force value.
As a result, the conductivity at 315 K was 1.1 × 10 −7 Scm −1 and the Seebeck coefficient was 128 mV / K.
Moreover, as shown in FIG. 1, the van der Waals volume ratio of the side chain of C10 DNTT was 57%. As shown in FIG. 4, in the C10 DNTT obtained in Example 1, sharp peaks were observed at 390 K, 500 K, 570 K and 580 K respectively by DSC (170-620 K), indicating that a structural phase transition occurs. It was done.
(実施例4) 化合物(C8−BTBT)を用いた縦型熱電変換素子の作製・評価
合成例2で合成した化合物 (C8−BTBT)を用いて縦型有機熱電変換素子を作製し、評価した。
ITOガラス基板(旭硝子製)にPEDOT/PSSをスピンコート(7000rpm×20sec)製膜、乾燥し基板を作製した。
作製した基板2枚でハイミラン(50μm 三井デュポンポリケミカル製)を挟み、150℃で加熱することにより25μmの隙間を持つ基板対を作製した。
作製した基板対に130℃で溶融した化合物 (C8BTBT)を注入し、熱電変換素子(電極間距離:25μm,電極サイズ100mm2)を得た。
得られた熱電変換素子のITO面に配線を行い、電極間に温度勾配を設けることにより、熱起電力が生じたことを確認した。
Example 4 Preparation and Evaluation of Vertical Thermoelectric Conversion Device Using Compound (C8-BTBT) A vertical organic thermoelectric conversion device was manufactured using the compound (C8-BTBT) synthesized in Synthesis Example 2 and evaluated. .
PEDOT / PSS was spin-coated (7000 rpm × 20 sec) on an ITO glass substrate (manufactured by Asahi Glass Co., Ltd.) and dried to prepare a substrate.
A pair of substrates having a gap of 25 μm was produced by holding high-millan (50 μm, made by Mitsui DuPont Polychemicals) between the two produced substrates and heating at 150 ° C.
The compound (C8BTBT) melted at 130 ° C. was injected into the prepared substrate pair to obtain a thermoelectric conversion device (distance between electrodes: 25 μm, electrode size: 100 mm 2).
Wiring was performed on the ITO surface of the obtained thermoelectric conversion element, and it was confirmed that a thermoelectromotive force was generated by providing a temperature gradient between the electrodes.
(実施例5)
実施例1で作製した熱電変換素子(C12BP)において、温度(27〜127℃)を変えて導電率とゼーベック係数を測定し、パワーファクターを算出した。図7に27〜227℃までのバルクのC12BPのDSCの分析データと27℃を基準としたパワーファクターの相対値(27〜127℃)を示した。
この結果よると、材料の構造相転移がみられる温度(80〜90℃)の近傍に大きなパワーファクターを示していることが確認できる。このことによりこの熱電変換素子では、70℃〜100℃、より好ましくは80〜90℃で使用することで、効率的な熱電変換を実施できることがわかる。従って、本発明熱電変換素子では、各熱電変換材料に応じて、最適な使用温度を選択することで非常に効率的な熱電変換が可能となることが示された。
(Example 5)
In the thermoelectric conversion element (C12BP) manufactured in Example 1, the temperature (27 to 127 ° C.) was changed, the conductivity and the Seebeck coefficient were measured, and the power factor was calculated. FIG. 7 shows the analysis data of bulk C12BP DSC up to 27-227 ° C. and the relative value (27-127 ° C.) of the power factor based on 27 ° C.
According to this result, it can be confirmed that a large power factor is shown in the vicinity of the temperature (80 to 90 ° C.) at which the structural phase transition of the material is observed. From this, it is understood that, by using this thermoelectric conversion element at 70 ° C. to 100 ° C., more preferably at 80 to 90 ° C., efficient thermoelectric conversion can be performed. Therefore, in the thermoelectric conversion element of the present invention, it has been shown that very efficient thermoelectric conversion can be achieved by selecting the optimum use temperature according to each thermoelectric conversion material.
(比較例1)
実施例3と同様に、化合物をC10DNTTではなく、DNTTを用いて、同様な素子を作製した。その結果、360Kでの導電率は8.3×10−9Scm−1であり、ゼーベック係数は35mV/Kであった。
比較例1で得られたDNTTでは、DSC(170−570K)によりピークは認められなかった。
(Comparative example 1)
Similar to Example 3, a compound was produced using DNTT instead of C10 DNTT, to fabricate a similar device. As a result, the conductivity at 360 K was 8.3 × 10 −9 Scm −1 and the Seebeck coefficient was 35 mV / K.
In the DNTT obtained in Comparative Example 1, no peak was observed by DSC (170-570 K).
(比較例2)
実施例3と同様に、化合物をC10DNTTではなく、ペンタセンを用いて、同様な素子を作製した。その結果、300Kでの導電率は1.3×10−6Scm−1であり、ゼーベック係数は2.4mV/Kであった。
(Comparative example 2)
A similar device was prepared using pentacene instead of C10 DNTT as in Example 3. As a result, the conductivity at 300 K was 1.3 × 10 −6 Scm −1 and the Seebeck coefficient was 2.4 mV / K.
スマートハウスやスマートビルディングのためのセンサマトリックスを形成するための分散電源及びエナジー・ハーベスティング素子として、住宅、オフィス、自動車における排出熱エネルギーの再利用において有用である。また、有機熱電変換材料の特徴である柔軟性を活かしてステッカー型の生体情報計測器(体温、脈拍、心電モニターなど)の電源として利用することもできる。特に非常に高いゼーベック係数を有することから高電圧のデバイス設計が容易となり、特徴のある熱電変換素子を提供することが可能となる。
As a distributed power source and energy harvesting element for forming a sensor matrix for smart house and smart building, it is useful in reutilization of exhaust heat energy in a house, an office and a car. Moreover, it can also be used as a power supply of a sticker type | mold biological information measuring instrument (a body temperature, a pulse, an electrocardiograph monitor etc.) taking advantage of the flexibility which is the characteristics of the organic thermoelectric conversion material. In particular, having a very high Seebeck coefficient facilitates high-voltage device design, making it possible to provide a characteristic thermoelectric conversion element.
Claims (4)
DSCにより−50℃〜200℃の範囲の温度で構造相転移が特定される導電性化合物を選択することを特徴とする、方法。 A method of producing an organic thermoelectric conversion material using a conductive compound having a basic skeleton consisting of a polycyclic aromatic ring having a carrier transport property and an alkyl group or a substituent having an alkyl group,
A method comprising selecting a conductive compound whose structural phase transition is specified by DSC at a temperature ranging from -50 ° C to 200 ° C.
DSCにより−50℃〜200℃の範囲の温度で構造相転移が特定される該導電性化合物を選択することを特徴とする、方法。 A method for improving the Seebeck coefficient of an organic thermoelectric conversion material comprising a conductive compound having a basic skeleton consisting of a polycyclic aromatic ring having carrier transport properties and an alkyl group or a substituent having an alkyl group,
A method comprising selecting the conductive compound whose structural phase transition is specified by DSC at a temperature ranging from -50 ° C to 200 ° C.
The method according to any one of claims 1 to 3, wherein a van der Waals volume ratio occupied by the substituent in the conductive compound is 25 to 60%.
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