JP6697127B2 - Resin-sealed semiconductor device and lead frame - Google Patents

Description

  The present invention relates to a resin-sealed semiconductor device and a lead frame.

  Conventionally, there is known a resin-sealed semiconductor device in which an electrode of a semiconductor chip mounted on a substrate and a lead frame are electrically connected (for example, JP-A 2004-146577 and 2006-). No. 202885).

  A semiconductor device 800 described in Japanese Patent Laid-Open No. 2004-146577 (referred to as a conventional semiconductor device 800) has a semiconductor chip 810 formed in a flat plate shape and a source electrode connection piece as shown in FIG. A source lead 820 having 820a, a gate lead 830 having a gate electrode connecting piece 830a, and a plurality of protruding terminals (bumps) 840 for electrically connecting the source electrode connecting piece 820a and the semiconductor chip 810. The semiconductor chip 810, the source electrode connection piece 820a, the gate electrode connection piece 830a, etc. are resin-sealed. The semiconductor device is stopped.

  In the conventional semiconductor device 800 having such a configuration, the source electrode connection piece 820a is formed with the slit 860 penetrating in the thickness direction so as to partition the adjacent protruding terminals 840.

  In the conventional semiconductor device 800, due to the presence of the slit 860, even if the temperature of the source electrode connecting piece 820a rises, the thermal expansion of the source electrode connecting piece 820a can be suppressed, and the slit can be formed at the time of resin sealing. It is said that the resin can be introduced from 860.

  On the other hand, a semiconductor device 900 described in Japanese Patent Laid-Open No. 2006-202885 (referred to as a conventional semiconductor device 900) has semiconductor chips 920 and 930 mounted on the surface of a heat dissipation block 910 as shown in FIG. And an electrode connection piece 940 having a joint portion 942 connected to the semiconductor chip 920 and a joint portion 942 connected to the semiconductor chip 930, and these semiconductor chips 920, 930, the joint portion 941 and the joint portion 942, etc. The semiconductor device is resin-sealed.

  In the conventional semiconductor device 900 having such a configuration, the electrode connecting piece 940 is provided with the first through holes 943 at two positions facing the heat dissipation block 910, and the semiconductor chip 920, Second through holes 944 are provided at positions facing the joints 941 and 942 with 930, respectively.

  In the conventional semiconductor device 900, the presence of the first through hole 943 allows the resin to flow in at the time of resin sealing, and the second first through hole 944 is present. By doing so, the state of the “solder fillet” of each of the joints 941 and 942 can be visually inspected.

JP 2004-146577 A JP, 2006-202885, A

  By the way, for the purpose of making the current uniform and alleviating the thermal stress, there is one in which the electrode of the semiconductor chip is divided into a plurality of regions by at least one groove (see, for example, FIG. 12).

  In such a semiconductor chip (referred to as an IGBT), as shown in FIGS. 12 (a) and 12 (b), the emitter electrode E has five regions A1 through three grooves S1, S2, S3. It is divided into A5. Then, as shown in FIG. 12C, these five regions A1 to A5 are connected to the flat emitter electrode connecting piece 200E.

  Further, when the flat plate-shaped emitter electrode E is connected to the flat plate-shaped emitter electrode connecting piece 200E, as shown in FIG. 12D, only the grooves S1 and S2 are formed in the grooves (FIG. 12D). Shows a state in which the openings on the side surface side end portions that serve as resin inlets in the grooves S1 and S2 are fine, and the openings on the upper surface side of the grooves S1 and S2 are closed. Therefore, in the grooves S1, S2, S3, the resin inflow port becomes a fine pipe shape. Although not shown in FIG. 12D, the same applies to the groove S3.

  When manufacturing a resin-encapsulated semiconductor device using such a semiconductor chip 100, the resin does not stably flow into the grooves S1, S2, S3 between the regions during resin encapsulation. A high-quality resin-sealed mold because cavities (air bubbles) are generated near the groove inside the resin-sealed body formed after resin sealing (including the inside of the groove, the resin inlet and the resin outlet), etc. There is a problem that the device is not a semiconductor device. Such a problem cannot be solved even if the techniques described in the conventional semiconductor device 800 and the conventional semiconductor device 900 are adopted.

  Therefore, the present invention has been made to solve the above-mentioned problems, and provides a high-quality resin-sealed semiconductor device in which no cavity exists near the groove in the resin-sealed body, and An object of the present invention is to provide a lead frame capable of being a high quality resin-sealed semiconductor device in which no cavity exists near the groove.

  [1] The resin-encapsulated semiconductor device of the present invention covers a semiconductor chip in which a plate-shaped electrode formed on one surface is divided into a plurality of regions by at least one groove, and the plurality of regions. A resin-sealed semiconductor device in which a flat plate-shaped electrode connecting piece connected to the flat plate-shaped electrode is resin-sealed, wherein the electrode connecting piece has a position facing the groove. A through hole is formed so as to penetrate the electrode connecting piece in the thickness direction.

  [2] In the resin-encapsulated semiconductor device of the present invention, the through hole has a length in a direction orthogonal to a direction along the resin flow path when the resin flows through the groove during resin encapsulation. It is preferable to have at least the width of the groove.

  [3] In the resin-encapsulated semiconductor device of the present invention, the through-hole has a length in a direction along the resin flow path when the resin flows through the groove during resin encapsulation. It is preferable that the shape of the long hole is longer than the length in the direction orthogonal to the direction along the road.

  [4] In the resin-encapsulated semiconductor device of the present invention, the grooves are arranged in parallel at predetermined intervals along an inflow direction when the resin flows into the semiconductor chip during resin encapsulation. 2 A plurality of grooves and a groove arranged to intersect the two grooves arranged in parallel, and the through hole is arranged to intersect at least the two grooves arranged in parallel. It is preferable that the groove is formed at a position opposed to the groove formed between the two grooves arranged in parallel.

  [5] In the resin-encapsulated semiconductor device of the present invention, the through hole has a first through hole and a second through hole that makes a pair with the first through hole, and the first through hole and the first through hole. It is preferable that the two through-holes are arranged side by side along a flow path of the resin when the resin flows through the groove during resin sealing.

  [6] In the resin-encapsulated semiconductor device of the present invention, a plurality of the semiconductor chips are present, and the flat plate-shaped electrode is formed for each flat plate-shaped electrode formed on each semiconductor chip of the plurality of semiconductor chips. There are a plurality of semiconductor chips, and the flat plate-shaped electrode connection piece is provided for each flat plate-shaped electrode formed on each semiconductor chip of the plurality of semiconductor chips. It is preferably connected.

  [7] A lead frame according to the present invention includes a semiconductor chip in which a flat plate-shaped electrode formed on one surface is divided into a plurality of regions by at least one groove, and the flat plate-shaped electrode so as to cover the plurality of regions. A lead frame which is used in a resin-sealed semiconductor device in which a flat plate-shaped electrode connection piece connected to the electrode is sealed with a resin, and leads having the electrode connection piece are integrally formed in a frame portion. Then, the electrode connecting piece is formed with a through hole penetrating in a thickness direction of the electrode connecting piece at a position facing the groove.

  [8] In the lead frame of the present invention, the through hole has at least the length of the groove in a direction orthogonal to a direction along a flow path of the resin when the resin flows through the groove during resin sealing. It preferably has a width length.

  [9] In the lead frame of the present invention, the through-hole has a length in a direction along the resin flow path when the resin flows through the groove during resin sealing in a direction along the resin flow path. It is preferable to have a long hole shape longer than the length in the direction orthogonal to.

  [10] In the lead frame of the present invention, the grooves are two grooves arranged in parallel at predetermined intervals along the inflow direction when the resin flows into the semiconductor chip during resin sealing. And a groove arranged to intersect the two grooves arranged in parallel, and the through hole faces at least a groove arranged to intersect the two grooves arranged in parallel. It is preferable that it is formed in a position sandwiched between the two grooves that are arranged in parallel at the position.

  [11] In the lead frame of the present invention, the through hole has a first through hole and a second through hole that makes a pair with the first through hole, and the first through hole and the second through hole are It is preferable that they are arranged side by side along the flow path of the resin when the resin flows through the groove during resin sealing.

  [12] In the lead frame of the present invention, a plurality of the semiconductor chips are present, and the flat plate-shaped electrode connection piece is provided for each flat plate-shaped electrode formed on each semiconductor chip of the plurality of semiconductor chips. Are preferably connected.

Effect of the present invention

  According to the resin-sealed semiconductor device of the present invention, a semiconductor chip in which a plate-shaped electrode formed on one surface is divided into a plurality of regions by at least one groove, and a flat plate so as to cover the plurality of regions Is a resin-sealed semiconductor device in which a flat plate-shaped electrode connecting piece connected to a flat electrode is resin-sealed, and the electrode connecting piece has a thickness of the electrode connecting piece at a position facing the groove. A through hole is formed so as to penetrate in the direction. As a result, during resin sealing, the through hole functions as a hole for air venting, and the resin flows stably in the groove, preventing the formation of cavities near the groove inside the resin sealing body. it can. As a result, the resin-encapsulated semiconductor device of the present invention is a high-quality resin-encapsulated semiconductor device in which no cavity exists near the groove inside the resin encapsulation body.

  Further, according to the lead frame of the present invention, a semiconductor chip in which a plate-shaped electrode formed on one surface is divided into a plurality of regions by at least one groove, and a plate-shaped electrode that covers the plurality of regions A lead frame which is used in a resin-sealed semiconductor device in which a flat plate-shaped electrode connection piece connected to an electrode is resin-sealed, and a lead having an electrode connection piece is integrally formed in a frame portion, The electrode connecting piece is formed with a through hole penetrating in the thickness direction of the electrode connecting piece at a position facing the groove. As a result, during resin sealing, the through hole functions as a hole for air venting, and the resin flows stably in the groove, preventing the formation of cavities near the groove inside the resin sealing body. it can. As a result, the resin-encapsulated semiconductor device using such a lead frame is a high-quality resin-encapsulated semiconductor device in which no cavity exists near the groove of the resin encapsulant.

FIG. 3 is a diagram for explaining the resin-sealed semiconductor device 1 according to the first embodiment. FIG. 1A is a perspective view showing an external appearance of the resin-sealed semiconductor device 1 according to the first embodiment, and FIG. 1B is a diagram showing the internal configuration of the resin-sealed semiconductor device 1 according to the first embodiment. It is a top view which expands and shows a part. It is a figure shown in order to demonstrate the flow path of resin when resin flows in groove | channel S1, S2, S3 at the time of resin sealing. FIG. 2 is a sectional view taken along the line aa in FIG. It is the bb sectional view taken on the line in FIG.1 (b). FIG. 3 is a diagram shown for explaining a lead frame RF1 used in the resin-sealed semiconductor device 1 according to the first embodiment. FIG. 6 is a diagram shown for explaining a resin-sealed semiconductor device 2 according to a second embodiment. FIG. 6A is a perspective view showing the external appearance of the resin-sealed semiconductor device 2 according to the second embodiment, and FIG. 6B is a perspective view of the internal configuration of the resin-sealed semiconductor device 2 according to the second embodiment. It is a top view which expands and shows a part. FIG. 6 is a diagram shown for explaining a lead frame RF2 used in the resin-sealed semiconductor device 2 according to the second embodiment. FIG. 7 is a diagram shown for explaining a resin-sealed semiconductor device 3 according to a third embodiment. FIG. 8A is a perspective view showing the external appearance of the resin-sealed semiconductor device 3 according to the third embodiment, and FIG. 8B is a perspective view of the internal configuration of the resin-sealed semiconductor device 3 according to the third embodiment. It is a top view which expands and shows a part. FIG. 11 is a diagram shown for explaining a lead frame RF3 used in the resin-sealed semiconductor device 3 according to the third embodiment. It is a figure shown in order to demonstrate the semiconductor device described in Unexamined-Japanese-Patent No. 2004-146577. 10A is a plan view in which a part is a cross section, and FIG. 10B is a cross sectional view taken along the line aa of FIG. 10A. It is a figure shown in order to demonstrate the semiconductor device described in Unexamined-Japanese-Patent No. 2006-202885. It is a figure which shows typically an example of the semiconductor chip 100 in which an electrode is divided into a plurality of regions by at least one groove. 12A is a plan view of the semiconductor chip 100, FIG. 12B is a side view of FIG. 12A viewed in the direction of the arrow y, and FIG. 12C is shown in FIG. It is a top view which shows the state which connected the emitter electrode connection piece 200E of the lead 200 to the emitter electrode E shown, and FIG.12 (d) is a side view which looked at FIG.12 (c) in the arrow y direction.

  Hereinafter, embodiments of the present invention will be described.

[Embodiment 1]
As shown in FIGS. 1A and 1B, the resin-sealed semiconductor device 1 according to the first embodiment includes a substrate 10, a semiconductor chip 20 mounted on one surface of the substrate 10, The semiconductor chip 20 has leads 31, 32, 33 connected to respective electrodes (details will be described later), and the substrate 10, the semiconductor chip 20, and a part of the leads 31, 32, 33 are made of resin. The structure is sealed by the sealing body 40.

  The semiconductor chip 20 used in the resin-sealed semiconductor device 1 according to the first embodiment is assumed to be an IGBT. Therefore, the electrodes include the emitter electrode E, the collector electrode C, and the gate electrode G. Here, the emitter electrode E is connected to the electrode connection piece 31E of the lead 31 (referred to as the emitter electrode connection piece 31E), and the collector electrode C is connected to the circuit pattern on the substrate 10. Note that the collector electrode C is not shown in FIG. 1 because it is in a position that cannot be seen in FIG. 1 (see FIG. 3 described later). Further, the collector electrode C is connected to the collector electrode connecting piece 32C of the lead 32 via the circuit pattern of the substrate 10. The gate electrode G is connected to the gate electrode connecting piece 33G of the lead 33 by wire bonding.

  By the way, in the semiconductor chip 20, the emitter electrode E is divided into five regions A1 to A5 by the grooves S1, S2, and S3, similarly to the semiconductor chip 100 described in FIG. Here, the grooves S1 and S2 are grooves that are arranged in parallel (in this case, parallel arrangement) at a predetermined interval along the inflow direction when the resin flows into the semiconductor chip 20 during resin sealing, S3 is a groove that is arranged so as to intersect (in this case, orthogonal) the two grooves S1 and S2 that are arranged in parallel. That is, the groove S3 is arranged in a direction orthogonal to the inflow direction when the resin flows into the semiconductor chip 20 during resin sealing.

  Then, as shown in FIG. 1B, the emitter electrode connection piece 31E of the lead 31 is connected to the regions A1 to A5 of the emitter electrode E so as to cover the regions A1 to A5. Specifically, the emitter electrode connection piece 31E of the lead 31 is a flat plate-shaped electrode connection piece, and the flat plate-shaped electrode connection piece covers each of the regions A1 to A5 of the emitter electrode E substantially entirely. It is connected to the areas A1 to A5.

  Further, in the emitter electrode connecting piece 31E of the lead 31, through holes h11 and h12 penetrating in the thickness direction of the emitter electrode connecting piece 31E at positions facing the grooves S1, S2 and S3 formed in the emitter electrode E. , H13 are formed. Specifically, the through hole h11 is provided at a position facing the groove S1, the through hole h12 is provided at a position facing the groove S2, and the through hole h13 is located at a position facing the groove S3. It is provided in. The through holes h11, h12, h13 mainly function as air vent holes at the time of resin sealing in the corresponding grooves S1, S2, S3.

  Here, the flow of resin at the time of resin sealing will be described with reference to FIG. In FIG. 2, broken lines R1, R2, R3 drawn in the grooves S1, S2, S3 indicate the resin flow paths in the grooves S1, S2, S3. The broken lines R1, R2, R3 indicating the flow paths will be described as flow paths R1, R2, R3 in the following description. At the time of resin sealing, the resin first flows into the grooves S1 and S2 and flows in the grooves S1 and S2 along the flow paths R1 and R2 in the arrow direction, and thereafter, the resin also flows into the grooves S3. It flows in and flows in the groove S3 along the flow path R3 in the arrow direction.

  By the way, when the emitter electrode connecting piece 31 (not shown in FIG. 2) is in a state of being connected to the emitter electrode E of the semiconductor chip 20, the through holes h11, h12, and h13 are shown by the one-dot chain line in FIG. Placed in position. That is, the through hole h11 and the through hole h12 are formed in the emitter electrode connecting piece 31E so as to be arranged at the positions facing the groove S1 and the groove S2. In addition, the through hole h13 is located at a position facing the groove S3 that intersects (in this case, is orthogonal to) the grooves S1 and S2 and is located at a predetermined position (position P) between the grooves S1 and S2. ) Is formed on the emitter electrode connecting piece 31E.

  Since the through holes h11, h12, h13 are formed in the emitter electrode 31E so as to be arranged at the positions shown by the one-dot chain line in FIG. 2, when the resin flows into the grooves S1, S2, S3 during resin sealing, Has the effect of facilitating the escape of the air accumulated in the grooves S1, S2, S3. Particularly, since the resin flows into the groove S3 later than the other grooves S1 and S2, air is likely to be accumulated in the groove S3. Moreover, in the section of the groove S3 sandwiched between the groove S1 and the groove S2, the air is more likely to be accumulated, and the accumulated air is less likely to escape. In consideration of this, by providing the through hole h13 at a predetermined position (position P) in the section sandwiched between the groove S1 and the groove S2, the through hole h13 is accumulated in the section sandwiched between the groove S1 and the groove S2 in the groove S3. You can surely remove the air.

  Further, the through holes h11, h12, h13 have a length D1 in the direction orthogonal to the direction along the resin flow paths R1, R2, R3 when the resin flows through the grooves S1, S2, S3 during resin sealing (FIG. 1 (b)) has at least the width w1 (about 200 μm) of the width of the grooves S1, S2, S3. In the resin-encapsulated semiconductor device 1 according to the first embodiment, the length D1 in the direction orthogonal to the direction along the resin flow paths R1, R2, R3 (the lateral length D1) is the groove. The width of S1, S2, S3 is slightly longer than the length w1.

  As a result, the through holes h11, h12, h13 are arranged so as to straddle the corresponding grooves S1, S2, S3. That is, taking the through hole h11 as an example, the central axis in the longitudinal direction of the through hole h11 (the central axis in the direction along the flow path R1) is defined as the central axis in the longitudinal direction of the groove S1 (the central axis along the flow path R1). ), The through hole h11 is arranged so as to straddle the groove S1. The same applies to the other through holes h12 and h13.

  Further, the through holes h11, h12, h13 have a length D2 (referred to as a vertical length D2) in the direction along the resin flow paths R1, R2, R3 (see FIG. 2), and the resin flow path R1. , R2, R3, the long hole shape is longer than the length in the direction orthogonal to the direction (lateral length D1). Therefore, the through holes h11, h12, and h13 have a plan view shape that is long in the direction along the flow paths R1, R2, and R3, that is, a shape that is long in the vertical direction. Here, examples of the shape that is long in the vertical direction include shapes such as “oval”, “oval”, “egg shape”, and “rectangle”, but in the resin-encapsulated semiconductor device 1 according to the first embodiment. Is an elliptical shape. In the resin-encapsulated semiconductor device 1 according to the first embodiment, the vertical length D2 is slightly longer than the horizontal length D1.

  Next, the positional relationship between the through holes h11, h12, h13 and the grooves S1, S2, S3 will be described. First, the positional relationship between the through holes h11 and h12 and the grooves S1 and S2 will be described with reference to FIG. In FIG. 3, the same components as those in FIGS. 1 and 2 are designated by the same reference numerals. As shown in FIG. 3, the through hole h11 is provided at a position facing the groove S1, and is provided so as to straddle the groove S1 in the width direction of the groove S1. Similarly, the through hole h12 is also provided at a position facing the groove S2 and so as to straddle the groove S2 in the width direction of the groove S2.

  Next, the positional relationship between the through hole h13 and the groove S3 will be described with reference to FIG. In FIG. 4, the same components as those in FIGS. 1, 2 and 3 are designated by the same reference numerals. As shown in FIG. 4, the through hole h13 is provided at a position facing the groove S3, and is provided so as to straddle the groove S3 in the width direction of the groove S3.

  Further, in FIGS. 3 and 4, the collector electrode C not shown in FIG. 1 is shown. The collector electrode C is connected to one surface (semiconductor chip mounting surface) of the substrate 10 and is connected to the collector electrode connection 32C of the lead 32 via the circuit pattern. Although not shown in FIG. 3 between the collector electrode C and the substrate 10 and between the emitter electrode E and the emitter electrode connecting piece 31E of the lead 31, there are actually solder layers respectively. .. Further, on the substrate 10, the heat radiation pad 50 is attached to the other surface of the substrate 10 (the surface opposite to the surface on which the semiconductor chip 20 is mounted).

  As described above, in the resin-encapsulated semiconductor device 1 according to the first embodiment, as shown in FIGS. 1 to 4, the emitter electrode connecting piece 31E of the lead 31 is formed on the emitter electrode E. Through holes h11, h12, h13 are formed at positions facing the grooves S1, S2, S3. Therefore, the resin-sealed semiconductor device according to the first embodiment has the following effects.

  The emitter electrode E of the semiconductor chip 20 is connected to the emitter electrode connection piece 31E in which the through holes h11, h12, h13 (see FIGS. 1, 3, and 4) are connected, so that resin sealing is performed. At this time, the through holes h11, h12, h13 function as air vent holes, and the resin flows stably in the grooves S1, S2, S3, so that the grooves S1, S2 in the resin sealing body 40 are formed. , S3 can be prevented from forming cavities. As a result, the resin-encapsulated semiconductor device 1 according to the first embodiment is a high-quality resin-encapsulated semiconductor device in which no cavity exists near the groove in the resin encapsulant 40.

  That is, in the emitter electrode connection piece 31E of the lead 31, a through hole h11 is formed at a position facing the groove S1, a through hole h12 is formed at a position facing the groove S2, and a through hole is formed at a position facing the groove S3. h13 is formed. Therefore, during resin sealing, the through holes h11, h12, h13 function as air vent holes in the corresponding grooves S1, S2, S3, respectively, and the resin flows into the grooves S1, S2, S3. At this time, the air accumulated in the grooves S1, S2, S3 easily escapes from the through holes h11, h12, h13. As a result, the resin stably flows in the grooves S1, S2, S3, and thus it is possible to prevent a cavity from being generated in the resin sealing body 40 near the grooves S1, S2, S3. As a result, the resin-encapsulated semiconductor device 1 according to the first embodiment is a high-quality resin-encapsulated semiconductor device in which no cavity exists in the resin encapsulant 40 near the grooves S1, S2, S3.

  Particularly, since the resin flows into the groove S3 later than the other grooves S1 and S2, air is likely to be accumulated in the groove S3. Moreover, in the section of the groove S3 sandwiched between the groove S1 and the groove S2, the air is more likely to be accumulated, and the accumulated air is less likely to escape. In consideration of this, by providing the through hole h13 at a predetermined position (position P) in the section sandwiched between the groove S1 and the groove S2, the through hole h13 is accumulated in the section sandwiched between the groove S1 and the groove S2 in the groove S3. You can surely remove the air. As a result, the resin flows stably not only in the grooves S1 and S2 but also in the grooves S3, so that it is possible to prevent cavities from being generated near the grooves S1, S2, and S3 in the resin sealing body 40.

  Further, in the resin-encapsulated semiconductor device 1 according to the first embodiment, the through holes h11, h12, and h13 have the lateral length D1 (see FIG. 1B) but the widths of the grooves S1, S2, and S3. (See FIG. 1B.) The length w1 is slightly longer than the length w1. As a result, at the time of resin sealing, the through holes h11, h12, h13 have higher functions as holes for venting air, and cavities are generated in the resin sealing body 40 near the grooves S1, S2, S3. Can be prevented more reliably.

  Further, in the resin-encapsulated semiconductor device 1 according to the first embodiment, the through holes h11, h12, h13 have the length D2 in the vertical direction (see FIG. 1B), but the flow paths R1, R2 of the resin. , R3 has an elliptical shape that is longer than the length in the direction orthogonal to the direction (lateral length D1). Also by this, the through holes h11, h12, h13 have a higher function as holes for venting air, and it is more certain that cavities are generated in the resin sealing body 40 near the grooves S1, S2, S3. It can be prevented.

Next, the lead frame RF1 used in the resin-sealed semiconductor device 1 according to the first embodiment will be described.
As shown in FIG. 5, the lead frame RF1 used in the resin-sealed semiconductor device 1 according to the first embodiment has a lead 31 having an emitter electrode connecting piece 31E, a lead 32 having a collector electrode connecting piece 32C, and a gate. And a lead 33 having an electrode connection piece 33G. The leads 31, 32, 33 are integrally formed with the frame portion 80 (including the outer frame and the connecting portion of the individual components). Note that the frame portion 80 is in a cut state after being resin-sealed.

  In the lead frame RF1 shown in FIG. 5, through holes h11, h12, h13 are formed in the emitter electrode connecting piece 31E. Since the through holes h11, h12, h13 have been described in FIGS. 1 to 4, the description of the through holes h11, h12, h13 is omitted here.

  Since the resin-encapsulated semiconductor device 1 according to the first embodiment uses such a lead frame RF1, the through holes h11, h12, and h13 function as air vent holes during resin encapsulation. Therefore, since the resin stably flows in the grooves S1, S2, S3, it is possible to prevent a cavity from being generated in the resin sealing body 40 near the grooves S1, S2, S3. As a result, the resin-encapsulated semiconductor device 1 according to the first embodiment is a high-quality resin-encapsulated semiconductor device in which no cavity exists near the groove of the resin encapsulant 40.

[Embodiment 2]
The resin-sealed semiconductor device 2 according to the second embodiment is different from the resin-sealed semiconductor device 1 according to the first embodiment in that the emitter electrode connecting piece 31E has, in addition to the through holes h11, h12, and h13, The point is that through holes h21, h22, and h23 are formed. The rest of the configuration including the external configuration is the same as that of the resin-sealed semiconductor device 1 according to the first embodiment. Therefore, the same components as those of the resin-encapsulated semiconductor device 1 according to the first embodiment are designated by the same reference numerals, and redundant description will be omitted as much as possible. In the following description, the through holes h11, h12, h13 are referred to as "first through holes h11, h12, h13" and the through holes h21, h22, h23 are referred to as "second through holes h21, h22, h23". To do.

  The second through holes h21, h22, h23 provided in the emitter electrode connecting piece 31E are through holes that penetrate the emitter electrode connecting piece 31E in the thickness direction, like the first through holes h11, h12, h13. Further, the second through holes h21, h22, h23 are paired with the first through holes h11, h12, h13 at positions facing the grooves S1, S2, S3, as shown in FIG. 6B. Is provided. Here, the second through holes h21, h22, h23 paired with the first through holes h11, h12, h13 refer to the through holes formed in the same groove. That is, in the groove S1, the first through hole h11 and the second through hole h21 form a pair, in the groove S2, the first through hole h12 and the second through hole h22 form a pair, and in the groove S3. The first through hole h13 and the second through hole h23 form a pair.

  The first through hole and the second first through hole forming a pair are located at predetermined positions along the resin flow paths R1, R2, R3 (see FIG. 2) at the time of resin sealing. Has been formed. For example, in the first through hole h11 and the second through hole h21, the first through hole h11 is formed at a position on the upstream side of the flow path R1 in the groove S1, and the second through hole h12 is the first in the same flow path R1. It is formed at a position downstream of the through hole h11.

  In addition, in the first through hole h12 and the second through hole h22, the first through hole h12 is formed at a position on the upstream side of the flow path R2 in the groove S2, and the second through hole h12 is the first in the same flow path R2. It is formed at a position downstream of the through passage h12.

  Further, in the first through hole h13 and the second through hole h23, the first through hole h13 is formed at a position on the upstream side of the flow path R3 in the groove S3, and the second through hole h13 is the first in the same flow path R3. It is formed at a position downstream of the through passage h13.

  Thus, the first through holes h11, h12, h13 and the second through holes h21, h22, h23 are formed in pairs on the emitter electrode connecting piece 31E. Then, at the time of resin sealing, the first through holes h11, h12, h13 mainly function as air vent holes, and the second through holes h21, h22, h23 mainly cover the emitter electrode E. The resin functions as an inflow hole for inflowing the flowing resin into the corresponding grooves S1, S2, S3.

  In the resin-sealed semiconductor device 2 according to the second embodiment, the second through holes h21, h22 among the second through holes h21, h22, h23 have the first through holes h11, h12, Although the second through hole h23 has a circular shape (see FIG. 6B) similar to that of the h13, the second through hole h23 also has the same shape as the first through holes h11, h12, h13 (oval). Shape). In addition, it is assumed that the size of the second through holes h21 and h22 having an oval shape in plan view (the horizontal length D1 and the vertical length D2) is the same as that of the first through holes h11, h12, and h13. In addition, the size (diameter) of the second through hole h23 having a circular shape in plan view is the same as the lateral length D1 of the second through holes h21 and h22 having an oval shape in this case.

  In addition, the first through holes h11, h12, h13 and the second through holes h21, h22, h23 may be different in plan view shape from each other. For example, only the first through holes h11, h12, h13 may have an oval shape, and the second through holes h21, h22, h23 may have a shape other than an oval shape (for example, a circular shape). Only h21, h22, and h23 may have an oval shape, and the first through holes h11, h12, and h13 may have a shape other than an oval shape (for example, a circular shape). Further, like the second through hole h23 shown in FIG. 6, the specific through hole may have a different shape from the other through holes.

  Further, the first through holes h11, h12, h13 and the second through holes h21, h22, h23 may be different in plan view size from each other. For example, the first through holes h11, h12, h13 may have a larger size than the second through holes h21, h22, h23, and conversely, the second through holes h21, h22, h23 may be replaced by the first through holes h11, h12, The size may be larger than h13, and the specific through hole may be different in size from other through holes.

  As described above, in the resin-sealed semiconductor device 2 according to the second embodiment, as shown in FIG. 6, the emitter electrode connecting piece 31E of the lead 31 has a pair of through holes (first through holes). h11 and the second through hole h21, the first through hole h12 and the second through hole h22, the first through hole h13 and the second through hole h23) are formed side by side along the resin flow paths R1, R2, R3. Therefore, in addition to the effects obtained in the resin-encapsulated semiconductor device 1 according to the first embodiment, the following effects can be obtained.

  That is, in the resin-encapsulated semiconductor device 2 according to the second embodiment, at the time of resin encapsulation, the first through holes h11, h12, h13 function as air vent holes, and in addition, the second through hole is formed. Since h21, h22, and h23 are formed, the resin flows stably in the grooves S1, S2, and S3, and cavities are generated in the resin sealing body 40 near the grooves S1, S2, and S3. In addition to the prevention, the resin flowing on the surface of the emitter electrode connecting piece 31E can be surely flowed into the grooves S1, S2, S3. As a result, the resin-encapsulated semiconductor device 2 according to the second embodiment is a high-quality resin-encapsulated semiconductor device in which no cavity exists near the groove of the resin encapsulant 40.

Next, the lead frame RF2 used in the resin-sealed semiconductor device 2 according to the second embodiment will be described.
The lead frame RF2 used in the resin-sealed semiconductor device 2 according to the second embodiment is basically the lead frame RF1 used in the resin-sealed semiconductor device 1 according to the first embodiment, as shown in FIG. Is the same as. The lead frame RF2 differs from the lead frame RF2 in that the emitter electrode connecting piece 31E of the lead 31 is formed so that the first through holes h11, h12, h13 and the second through holes h21, h22, h23 form a pair. That is the point. Since the first through holes h11, h12, h13 and the second through holes h21, h22, h23 have been described in FIG. 6, here, the first through holes h11, h12, h13 and the second through holes h21, h22. , H23 will be omitted.

  Since the resin-sealed semiconductor device 2 according to the second embodiment uses such a lead frame RF2, the first through holes h11, h12, h13 function as air vent holes during resin sealing. In addition, since the second through holes h21, h22, h23 are formed, the resin flowing on the surface of the emitter electrode connecting piece 31E can be more surely flown into the respective grooves S1, S2, S3. it can. As a result, the resin-encapsulated semiconductor device 2 according to the second embodiment is a high-quality resin-encapsulated semiconductor device in which no cavity exists near the groove of the resin encapsulant 40.

[Third Embodiment]
The resin-sealed semiconductor device 3 according to the third embodiment is different from the resin-sealed semiconductor device 1 according to the first embodiment and the resin-sealed semiconductor device 2 according to the second embodiment in the resin sealing body 40. The two semiconductor chips 20 and 60 are mounted on, and the leads 31, 33, 34, 35 and 36 are provided as leads. Hereinafter, the semiconductor chip 20 will be described as the first semiconductor chip 20 and the semiconductor chip 60 will be described as the second semiconductor chip 60. In the second semiconductor chip 60 as well, like the first semiconductor chip 20, the emitter electrode E is divided into regions A1 to A5 by the grooves S1, S2, S3 (see FIG. 12).

  In the first semiconductor chip 20, similarly to the resin-sealed semiconductor device 1 according to the first embodiment and the resin-sealed semiconductor device 2 according to the second embodiment, the emitter electrode E is connected to the emitter electrode connection piece 31E of the lead 31. The collector electrode C (not shown) is connected to the circuit pattern of the substrate 10, and the gate electrode G is connected to the gate electrode connecting piece 33G of the lead 33 by wire bonding. The collector electrode C of the first semiconductor chip 20 is connected to the collector electrode connecting piece 35C of the lead 35 via the circuit pattern of the substrate 10.

  On the other hand, the second semiconductor chip 60 is mounted on the substrate 70. The emitter electrode E of the second semiconductor chip 60 is connected to the emitter electrode connecting piece 35E of the lead 35. Therefore, the collector electrode C of the first semiconductor chip 20 and the emitter electrode E of the second semiconductor chip 60 are commonly connected by the lead 35. The collector electrode C (not shown) of the second semiconductor chip 60 is connected to the circuit pattern of the substrate 70. Then, the collector electrode C of the second semiconductor chip 60 is connected to the collector electrode connecting piece 34C of the lead 34 via the circuit pattern of the substrate 70, and the gate electrode G of the second semiconductor chip 60 is wire-bonded to the lead 36. Is connected to the gate electrode connection piece 36G.

  Further, in the resin-sealed semiconductor device 3 according to the third embodiment, the emitter-electrode connected piece 31E connected to the emitter electrode E of the first semiconductor chip 20 has the resin-sealed semiconductor device according to the second embodiment. Similar to 2, the first through holes h11, h12, h13 and the second through holes h21, h22, h23 are formed. Further, the emitter electrode connecting piece 35E connected to the emitter electrode E of the second semiconductor chip 60 is also provided with the first through holes h11, h12, h13, similarly to the resin-sealed semiconductor device 2 according to the second embodiment. Second through holes h21, h22, h23 are formed.

  Here, the positional relationship between the first through holes h11, h12, h13 formed in the emitter electrode connecting piece 35E and the second through holes h21, h22, h23 is the first through hole formed in the emitter electrode connecting piece 31E. The positional relationship between the through holes h11, h12, h13 and the second through holes h21, h22, h23 is assumed to be the same. That is, also in the emitter electrode connection piece 35E, the first through hole h11 and the second through hole h21 form a pair, and the first through hole h11 and the second through hole h21 forming the pair have the same flow path of the groove S1. The first through holes h11 are arranged side by side along the R1 and are arranged so as to be positioned upstream of the flow path R1 with respect to the second through holes h21.

  Similarly, the first through hole h12 and the second through hole h22 form a pair, and the first through hole h12 and the second through hole h22 forming the pair are arranged side by side along the flow path R2 of the same groove S2. In addition, the first through hole h12 is arranged so as to be located upstream of the second through hole h22 in the flow path R2.

  Similarly, the first through hole h13 and the second through hole h23 form a pair, and the first through hole h13 and the second through hole h23 forming the pair are arranged side by side along the flow path R3 of the same groove S3. In addition, the first through hole h13 is arranged so as to be located upstream of the second through hole h23 in the flow path R3.

  The plan view shapes of the first through holes h11, h12, h13 and the second through holes h21, h22, h23 formed in the emitter electrode connecting piece 35E are the same as the first through holes formed in the emitter electrode connecting piece 31E. It is assumed that the holes h11, h12, h13 and the second through holes h21, h22, h23 have the same shape in plan view, respectively. Further, the plan view size of the first through holes h11, h12, h13 and the second through holes h21, h22, h23 formed in the emitter electrode connecting piece 35E is the same as the first through holes formed in the emitter electrode connecting piece 31E. It is assumed that the holes h11, h12, h13 and the second through holes h21, h22, h23 have the same size in plan view, respectively.

  By the way, in the resin-encapsulated semiconductor device 3 according to the third embodiment thus configured, the resin filling direction during resin encapsulation is the direction indicated by the white arrow F in FIG. 8B. And Therefore, the resin flows along the x-axis in the leftward direction in the figure, and when attention is paid only to the first semiconductor chip 20 and the second semiconductor chip 60, the first semiconductor chip 20 and the second semiconductor chip In the emitter electrode E of the chip 60, they flow into the grooves S1, S2, S3 formed in the respective emitter electrodes E.

  Specifically, in the first semiconductor chip 20, as shown in FIG. 8B, the resin flows in the grooves S1 and S2 along the flow paths R1 and R2 in the arrow direction (upward direction in the drawing). As it goes, it flows in the groove S3 along the flow path R3 in the arrow direction (left direction in the drawing). On the other hand, in the second semiconductor chip 60, as shown in FIG. 8B, the resin flows in the grooves S1 and S2 along the flow paths R1 and R2 in the arrow direction (downward direction in the drawing). , In the groove S3 along the flow path R3 in the arrow direction (leftward in the drawing).

  As described above, in the resin-sealed semiconductor device 3 according to the third embodiment, the two semiconductor chips (the first semiconductor chip 20 and the second semiconductor chip 60) are mounted in the resin-sealed body 40. However, even in such a resin-encapsulated semiconductor device, the emitter electrode connection piece 31E and the emitter electrode connection piece 35E each have a pair of through holes (first through hole h11 and The second through hole h21, the first through hole h12 and the second through hole h22, the first through hole h13 and the second through hole h23) are arranged side by side along the resin flow paths R1, R2, R3, respectively. ing.

  Therefore, in the resin-encapsulated semiconductor device 3 according to the third embodiment, it is formed on the respective emitter electrodes E of the first semiconductor chip 20 and the second semiconductor chip 60 mounted in the resin encapsulant 40. It is possible to prevent cavities from being generated in the vicinity of the existing grooves S1, S2, S3, and to reliably allow the resin to flow into the grooves S1, S2, S3. As a result, even in a resin-sealed semiconductor device in which a plurality of semiconductor chips (two semiconductor chips in this case) are mounted inside the resin sealing body 40, a cavity is formed near the groove of the resin sealing body 40. It becomes a high quality resin-sealed semiconductor device that does not exist.

  Next, the lead frame RF3 used in the resin-sealed semiconductor device 3 according to the third embodiment will be described.

  As shown in FIG. 9, the lead frame RF3 used in the resin-sealed semiconductor device 3 according to the third embodiment has a lead 31 having an emitter electrode connection piece 31E as a configuration on the side corresponding to the first semiconductor chip 20. And a lead 33 having a gate electrode connecting piece 33G. On the other hand, the structure corresponding to the second semiconductor chip 60 has a lead 34 having a collector electrode connecting piece 34C and a lead 36 having a gate electrode connecting piece 36G.

  In addition, in the lead frame RF3 used in the resin-sealed semiconductor device 3 according to the third embodiment, the lead 35 that commonly connects the collector electrode C of the first semiconductor chip 20 and the emitter electrode E of the second semiconductor chip 60 is used. The frames 80 are connected to each other. The lead 35 has a collector electrode connecting piece 35C for connecting to the collector electrode C of the first semiconductor chip 20 and an emitter electrode connecting piece 35E for connecting to the emitter electrode E of the second semiconductor chip 60. There is. The leads 31, 33, 34, 35, 36 are integrally formed on the frame portion 80.

  In the lead frame RF3 shown in FIG. 9, the emitter electrode connecting piece 31E is formed so that the first through holes h11, h12, h13 and the second through holes h21, h22, h23 form a pair, and Also in the electrode connection piece 35E, the first through holes h11, h12, h13 and the second through holes h21, h22, h23 are formed so as to form a pair. Since the first through holes h11, h12, h13 and the second through holes h21, h22, h23 have been described in FIG. 8, here, the first through holes h11, h12, h13 and the second through holes h21, h22. , H23 will be omitted.

  Since the resin-encapsulated semiconductor device 3 according to the third embodiment uses such a lead frame RF3, at the time of resin encapsulation, the first semiconductor chip 20 and the first semiconductor chip 20 mounted in the resin encapsulant 40 and (2) It is possible to prevent cavities from being generated in the vicinity of the grooves S1, S2, S3 formed in the respective emitter electrodes E of the two semiconductor chips 60, and to reliably flow the resin into the grooves S1, S2, S3. As a result, even in a resin-sealed semiconductor device in which a plurality of semiconductor chips (two semiconductor chips in this case) are mounted inside the resin sealing body 40, a cavity is formed near the groove of the resin sealing body 40. It is possible to obtain a high-quality resin-sealed semiconductor device that does not exist.

  The present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the gist of the present invention. For example, the following modifications are possible.

  (1) In each of the above embodiments, the semiconductor chip mounted on the resin-sealed semiconductor device is the IGBT, but the semiconductor chip is not limited to the IGBT, and the flat electrode is divided into a plurality of regions by the groove. However, as long as it is a semiconductor chip that is connected by the electrode connecting piece so as to cover the plurality of regions, it can be implemented in the same manner as each of the above embodiments.

  (2) In each of the above-described embodiments, the case where the electrode of the semiconductor chip is divided into five regions is illustrated, but the number of divided electrodes is not limited to five, and the number of electrodes is two or more. It can be applied if it is divided into regions. That is, the present invention can be applied when the plate-shaped electrode is divided into a plurality of regions by at least one groove.

  (3) In the above-described embodiment, the shape of the first through hole is an elliptical shape, but the shape is not limited to an oval shape, and may be, for example, a square hole (for example, a rectangle or a square). Good.

  (4) In the third embodiment, the emitter electrode connecting pieces 31E and 35E of the first semiconductor chip 20 and the second semiconductor chip 60 are the same as those of the resin-sealed semiconductor device 2 according to the second embodiment. Although the case where the first through holes h11, h12, h13 and the second through holes h21, h22, h23 are formed has been illustrated, the first through hole h11 is similar to the resin-sealed semiconductor device 1 according to the first embodiment. , H12, h13 may be formed.

  (5) In the third embodiment, the case where the number of semiconductor chips is two has been described, but the present invention can be applied to the case where the number of semiconductor chips is three or more.

  (6) In each of the above-described embodiments, the cross section of the groove (cross section orthogonal to the flow path) is a square, but the cross section is not limited to a square and may be, for example, a U-shape.

  1, 2, 3 ... Resin-sealed semiconductor device, 10, 70 ... Substrate, 20 ... Semiconductor chip (first semiconductor chip), 60 ... Semiconductor chip (second semiconductor chip), 31 , 32, 33, 34, 35, 36 ... Lead, 31E, 35E ... Emitter electrode connecting piece, 32C, 34C, 35C ... Collector electrode connecting piece, 33G, 36G ... Gate electrode connecting piece, 40 ... Resin sealing body, 50 ... Heat dissipation pad, A1 to A5 ... Region, D1 ... Horizontal length, D2 ... Vertical length, E ... Emitter electrode, C. ..Collector electrodes, G ... Gate electrodes, F ... Resin filling direction, h11, h12, h13 ... First through holes, h21, h22, h23 ... Second through holes, R1, R2 , R3 ... flow path, RF1, RF2, RF3 ... lead frame , The length of S1, S2, S3 · · · groove, the width of w1 · · · groove S1, S2, S3

Claims (10)

A semiconductor chip in which a plate-shaped electrode formed on one surface is divided into a plurality of regions by at least one groove, and a plate-shaped electrode connected to the plate-shaped electrode so as to cover the plurality of regions. A resin-sealed semiconductor device in which a connection piece is resin-sealed,
In the electrode connecting piece, at a position facing the groove, a through hole penetrating in the thickness direction of the electrode connecting piece is formed ,
The through hole is characterized in that the length in the direction orthogonal to the direction along the flow path of the resin when the resin flows through the groove at the time of resin sealing has at least the width of the groove. Resin-sealed semiconductor device. The through-hole is a long hole in which the length of the resin along the flow path when the resin flows in the groove during resin sealing is longer than the length in the direction orthogonal to the direction of the flow path of the resin. The resin-encapsulated semiconductor device according to claim 1, wherein the resin-encapsulated semiconductor device has a shape. The groove is divided into two grooves arranged in parallel at a predetermined interval along the inflow direction when the resin flows into the semiconductor chip during resin sealing, and two grooves arranged in parallel. And a groove arranged to intersect,
The through hole is formed at least at a position facing a groove arranged to intersect with the two grooves arranged in parallel, and in a section sandwiched between the two grooves arranged in parallel. resin-encapsulated semiconductor device according to claim 1 or 2, characterized in that there. The through-hole has a first through-hole and a second through-hole that makes a pair with the first through-hole, and the first through-hole and the second through-hole have the resin in the groove during resin sealing. resin-encapsulated semiconductor device according to any one of claims 1 to 3, characterized in that said are arranged side by side along the flow path of the resin during flowing. A plurality of the semiconductor chips are present, and the plate-shaped electrode connecting piece is connected to each of the plate-shaped electrodes formed on each semiconductor chip of the plurality of semiconductor chips. Item 5. A resin-encapsulated semiconductor device according to any one of items 1 to 4 . A semiconductor chip in which a plate-shaped electrode formed on one surface is divided into a plurality of regions by at least one groove, and a plate-shaped electrode connected to the plate-shaped electrode so as to cover the plurality of regions. A lead frame used in a resin-sealed semiconductor device in which a connecting piece is resin-sealed, wherein a lead having the electrode connecting piece is integrally formed in a frame portion,
In the electrode connecting piece, at a position facing the groove, a through hole penetrating in the thickness direction of the electrode connecting piece is formed ,
The through-hole has a length in a direction orthogonal to a direction along the flow path of the resin when the resin flows through the groove at the time of resin sealing, at least having a width of the groove. Characteristic lead frame. The through-hole is a long hole in which the length of the resin along the flow path when the resin flows in the groove during resin sealing is longer than the length in the direction orthogonal to the direction of the flow path of the resin. The lead frame according to claim 6 , which has a shape. The groove is divided into two grooves arranged in parallel at a predetermined interval along the inflow direction when the resin flows into the semiconductor chip during resin sealing, and two grooves arranged in parallel. And a groove arranged to intersect,
The through hole is formed at least at a position facing a groove arranged to intersect with the two grooves arranged in parallel, and in a section sandwiched between the two grooves arranged in parallel. The lead frame according to claim 6 or 7 , wherein The through-hole has a first through-hole and a second through-hole that makes a pair with the first through-hole, and the first through-hole and the second through-hole have the resin in the groove during resin sealing. lead frame according to any one of claims 6-8, characterized in that said are arranged side by side along the flow path of the resin during flowing. There are a plurality of the semiconductor chips, and a lead having the plate-shaped electrode connecting piece is integrally formed on the frame portion for each of the plate-shaped electrodes formed on each of the semiconductor chips of the plurality of semiconductor chips. lead frame according to any one of claims 6-9, characterized by comprising Te.

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