JP6676701B2 - SiC表面の平坦化方法 - Google Patents
SiC表面の平坦化方法 Download PDFInfo
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- JP6676701B2 JP6676701B2 JP2018102095A JP2018102095A JP6676701B2 JP 6676701 B2 JP6676701 B2 JP 6676701B2 JP 2018102095 A JP2018102095 A JP 2018102095A JP 2018102095 A JP2018102095 A JP 2018102095A JP 6676701 B2 JP6676701 B2 JP 6676701B2
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- 238000000034 method Methods 0.000 title claims description 94
- 239000000758 substrate Substances 0.000 claims description 179
- 239000000463 material Substances 0.000 claims description 91
- 150000002500 ions Chemical class 0.000 claims description 43
- 238000001039 wet etching Methods 0.000 claims description 21
- 238000005468 ion implantation Methods 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 9
- 238000010884 ion-beam technique Methods 0.000 claims description 9
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052698 phosphorus Inorganic materials 0.000 claims description 4
- 239000011574 phosphorus Substances 0.000 claims description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 4
- 230000035515 penetration Effects 0.000 claims description 3
- -1 phosphorus ions Chemical class 0.000 claims description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 239000006117 anti-reflective coating Substances 0.000 claims description 2
- 229910052786 argon Inorganic materials 0.000 claims description 2
- 229910052785 arsenic Inorganic materials 0.000 claims description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 229910052796 boron Inorganic materials 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- 229910017604 nitric acid Inorganic materials 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 229920002120 photoresistant polymer Polymers 0.000 claims description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 2
- 229920000642 polymer Polymers 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 1
- 239000013078 crystal Substances 0.000 description 21
- 238000003631 wet chemical etching Methods 0.000 description 20
- 235000012431 wafers Nutrition 0.000 description 12
- 230000003746 surface roughness Effects 0.000 description 11
- 238000001312 dry etching Methods 0.000 description 8
- 239000000203 mixture Substances 0.000 description 8
- 230000005465 channeling Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000012876 topography Methods 0.000 description 4
- 238000002513 implantation Methods 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
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- 238000000227 grinding Methods 0.000 description 2
- 208000013201 Stress fracture Diseases 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000013404 process transfer Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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Description
102 粗面
104 山
106 谷
108 犠牲材料
110 表面
112 イオン
114 非晶質領域
116 領域
118 上面
200 新しい犠牲材料
202 イオン
204 新しい非晶質領域
206 上面
300 SiC基板
302 粗面
304 領域
400 イオン
402 非晶質化領域
500 イオン
502 平坦化された表面
504 新しい非晶質領域
600 SiC基板
602 粗面
604 犠牲材料
606 上面
608 イオン
610 非晶質領域
612 上面
700 SiC基板
702 粗面
704 犠牲材料
706 非晶質領域
706 イオンビーム
Claims (22)
- SiC基板の粗面の平坦化方法であって、
前記SiC基板の前記粗面上に犠牲材料を形成するステップであって、前記犠牲材料が、前記SiC基板の密度の35%〜120%の間の密度を有するステップと;
前記犠牲材料を通過して前記SiC基板の前記粗面内までイオンを注入して、前記SiC基板内に非晶質領域を形成するステップと;
前記犠牲材料と、前記SiC基板の前記非晶質領域とを湿式エッチングによって除去することによって、前記SiC基板の表面を露出させるステップと、
を含む方法。 - 前記犠牲材料と前記SiC基板の前記非晶質領域とが湿式エッチングによって除去された後に、前記SiC基板の前記表面が、残存する粗さを有し、
前記残存する粗さを有する前記SiC基板の前記表面上にさらなる犠牲材料を形成するステップであって、前記さらなる犠牲材料が、前記SiC基板の前記密度の35%〜120%の間の密度を有するステップと;
前記さらなる犠牲材料を通過して、前記残存する粗さを有する前記SiC基板の前記表面内までイオンを注入して、前記SiC基板内にさらなる非晶質領域を形成するステップと;
前記さらなる犠牲材料と、前記SiC基板の前記さらなる非晶質領域とを湿式エッチングによって除去するステップと、
をさらに含む、請求項1に記載の方法。 - 前記犠牲材料を通過して前記SiC基板の前記粗面内までイオンを注入して、前記非晶質領域を形成するステップが、
前記犠牲材料に向かうイオンビームを発生させるステップと;
前記SiC基板に対する垂直方向を基準として1度〜10度の間の角度で前記イオンビームを傾斜させるステップと、
を含む、請求項1に記載の方法。 - 前記犠牲材料が、ポリマー、反射防止コーティング、フォトレジスト、スピンオンガラス、および高密度プラズマ化学蒸着(HDP−CVD)された酸化物の少なくとも1つを含む、請求項1に記載の方法。
- 前記イオンを注入するステップの前に、前記犠牲材料を平坦化するステップをさらに含む、請求項1に記載の方法。
- 前記イオンが、前記SiC基板内で電気的に活性である、請求項1に記載の方法。
- 前記非晶質領域の除去後に前記イオンの一部が前記SiC基板内に残存して、前記非晶質領域の除去によって形成される前記SiC基板の平坦化された前記表面において導電性領域を形成する、請求項6に記載の方法。
- 前記イオンが、前記SiC基板内で電気的に不活性である、請求項1に記載の方法。
- 前記イオンが、アルミニウム、アルゴン、ヒ素、窒素、酸素、リン、ホウ素、ケイ素、炭素、およびゲルマニウムからなる群から選択される、請求項1に記載の方法。
- 前記SiC基板の前記粗面が、ある最大山谷間距離を有し、前記SiC基板内で前記非晶質領域が前記最大山谷間距離よりも深くに延在するように選択されたエネルギーレベルで前記イオンが注入される、請求項1に記載の方法。
- 湿式エッチングによって前記SiC基板の前記非晶質領域を除去するステップが、フッ化水素酸、硝酸、水酸化テトラメチルアンモニウム、または水酸化カリウムの溶液中で前記SiC基板のエッチングを行うステップを含む、請求項1に記載の方法。
- 前記粗面上に前記犠牲材料を形成する前に、前記SiC基板の前記粗面の乾式エッチングを行うステップをさらに含む、請求項1に記載の方法。
- 前記犠牲材料と前記SiC基板の前記非晶質領域とを湿式エッチングによって除去した後に、前記SiC基板の表面の乾式エッチングを行うステップをさらに含む、請求項1に記載の方法。
- 前記粗面上に前記犠牲材料を形成する前に、前記SiC基板の前記粗面内にイオンを直接注入して、前記SiC基板内にさらなる非晶質領域を形成するステップと;
前記粗面上に前記犠牲材料を形成する前に、湿式エッチングによって前記さらなる非晶質領域を除去するステップとをさらに含む、
請求項1に記載の方法。 - 前記犠牲材料と前記SiC基板の前記非晶質領域とを湿式エッチングによって除去した後に、前記SiC基板の表面内にイオンを直接注入して、前記SiC基板内にさらなる非晶質領域を形成するステップと;
前記SiC基板の前記さらなる非晶質領域を湿式エッチングによって除去するステップと、
をさらに含む、請求項1に記載の方法。 - 前記粗面上に前記犠牲材料を形成する前に、前記SiC基板の前記粗面を部分的に平坦化するステップをさらに含む、請求項1に記載の方法。
- 部分的な平坦化の前に、前記SiC基板の前記粗面が5μm〜15μmの間の範囲内の平均山谷間距離を有し、部分的な平坦化の後且つ前記粗面上に前記犠牲材料を形成する前に、前記SiC基板の前記粗面が1μm〜5μmの間または0.3μm〜1.5μmの間の範囲内の平均山谷間距離を有する、請求項16に記載の方法。
- 前記犠牲材料と、前記SiCの前記非晶質領域とが異なるエッチング溶液によって除去される、請求項1に記載の方法。
- SiCウエハを分割して前記SiC基板を形成するステップをさらに含み、前記SiC基板の前記粗面が前記分割によって得られる、請求項1に記載の方法。
- SiCウエハを薄化して前記SiC基板を形成するステップをさらに含み、前記SiC基板の前記粗面が前記薄化によって得られる、請求項1に記載の方法。
- SiCボウルを鋸引きして前記SiC基板を形成するステップをさらに含み、前記SiC基板の前記粗面が前記鋸引きによって得られる、請求項1に記載の方法。
- 前記イオンがリンイオンであり、前記犠牲材料が、前記リンイオンの場合に1MeVのイオンエネルギーにおいて、SiCの場合よりも150%大きい、もしくは100%大きい、もしくは50%大きい、またはSiCの場合よりも20%もしくは50%小さいイオン注入侵入深さを有する、請求項1に記載の方法。
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