JP6656479B2 - プラズマ処理装置および方法 - Google Patents
プラズマ処理装置および方法 Download PDFInfo
- Publication number
- JP6656479B2 JP6656479B2 JP2019526924A JP2019526924A JP6656479B2 JP 6656479 B2 JP6656479 B2 JP 6656479B2 JP 2019526924 A JP2019526924 A JP 2019526924A JP 2019526924 A JP2019526924 A JP 2019526924A JP 6656479 B2 JP6656479 B2 JP 6656479B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- terminal
- plasma processing
- processing apparatus
- balanced terminal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 238000012545 processing Methods 0.000 title claims description 166
- 238000000034 method Methods 0.000 title description 5
- 239000000758 substrate Substances 0.000 claims description 100
- 239000003990 capacitor Substances 0.000 claims description 83
- 230000007246 mechanism Effects 0.000 claims description 38
- 238000003672 processing method Methods 0.000 claims description 8
- 230000000903 blocking effect Effects 0.000 description 44
- 238000004544 sputter deposition Methods 0.000 description 20
- 101001135770 Homo sapiens Parathyroid hormone Proteins 0.000 description 19
- 101001135995 Homo sapiens Probable peptidyl-tRNA hydrolase Proteins 0.000 description 19
- 102100036893 Parathyroid hormone Human genes 0.000 description 19
- 101001084254 Homo sapiens Peptidyl-tRNA hydrolase 2, mitochondrial Proteins 0.000 description 18
- 101000598103 Homo sapiens Tuberoinfundibular peptide of 39 residues Proteins 0.000 description 18
- 102100036964 Tuberoinfundibular peptide of 39 residues Human genes 0.000 description 18
- 239000012212 insulator Substances 0.000 description 17
- 239000000463 material Substances 0.000 description 12
- 230000008859 change Effects 0.000 description 10
- 230000000087 stabilizing effect Effects 0.000 description 9
- 238000002955 isolation Methods 0.000 description 8
- 239000004020 conductor Substances 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 239000012528 membrane Substances 0.000 description 6
- 238000005192 partition Methods 0.000 description 6
- 101000685663 Homo sapiens Sodium/nucleoside cotransporter 1 Proteins 0.000 description 4
- 101000821827 Homo sapiens Sodium/nucleoside cotransporter 2 Proteins 0.000 description 4
- 102100023116 Sodium/nucleoside cotransporter 1 Human genes 0.000 description 4
- 102100021541 Sodium/nucleoside cotransporter 2 Human genes 0.000 description 4
- 230000001939 inductive effect Effects 0.000 description 4
- 238000004088 simulation Methods 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical group [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
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- 239000000470 constituent Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Health & Medical Sciences (AREA)
- Computer Hardware Design (AREA)
- Toxicology (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Plasma Technology (AREA)
- Physical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2017/023603 WO2019003309A1 (ja) | 2017-06-27 | 2017-06-27 | プラズマ処理装置 |
| PCT/JP2017/023611 WO2019003312A1 (ja) | 2017-06-27 | 2017-06-27 | プラズマ処理装置 |
| JPPCT/JP2017/023603 | 2017-06-27 | ||
| JPPCT/JP2017/023611 | 2017-06-27 | ||
| JP2018017551 | 2018-02-02 | ||
| JP2018017551 | 2018-02-02 | ||
| PCT/JP2018/024147 WO2019004185A1 (ja) | 2017-06-27 | 2018-06-26 | プラズマ処理装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019177728A Division JP7145833B2 (ja) | 2017-06-27 | 2019-09-27 | プラズマ処理装置およびプラズマ処理方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2019004185A1 JPWO2019004185A1 (ja) | 2020-01-09 |
| JP6656479B2 true JP6656479B2 (ja) | 2020-03-04 |
Family
ID=64742978
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019526924A Active JP6656479B2 (ja) | 2017-06-27 | 2018-06-26 | プラズマ処理装置および方法 |
| JP2019177728A Active JP7145833B2 (ja) | 2017-06-27 | 2019-09-27 | プラズマ処理装置およびプラズマ処理方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019177728A Active JP7145833B2 (ja) | 2017-06-27 | 2019-09-27 | プラズマ処理装置およびプラズマ処理方法 |
Country Status (3)
| Country | Link |
|---|---|
| JP (2) | JP6656479B2 (zh) |
| TW (3) | TWI679924B (zh) |
| WO (1) | WO2019004185A1 (zh) |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53141937U (zh) * | 1977-04-15 | 1978-11-09 | ||
| US4887005A (en) * | 1987-09-15 | 1989-12-12 | Rough J Kirkwood H | Multiple electrode plasma reactor power distribution system |
| JPH02156080A (ja) * | 1988-12-09 | 1990-06-15 | Tokuda Seisakusho Ltd | スパッタ装置 |
| US5330578A (en) * | 1991-03-12 | 1994-07-19 | Semiconductor Energy Laboratory Co., Ltd. | Plasma treatment apparatus |
| JP2010045664A (ja) * | 2008-08-14 | 2010-02-25 | Tokyo Electron Ltd | マッチング装置、マッチング方法、プラズマ処理装置、及び記憶媒体 |
| US8438990B2 (en) * | 2008-09-30 | 2013-05-14 | Applied Materials, Inc. | Multi-electrode PECVD source |
| JP2009302566A (ja) * | 2009-09-16 | 2009-12-24 | Masayoshi Murata | トランス型平衡不平衡変換装置を備えたプラズマ表面処理装置 |
| WO2012095961A1 (ja) * | 2011-01-12 | 2012-07-19 | 日新電機株式会社 | プラズマ装置 |
| KR101839776B1 (ko) * | 2011-02-18 | 2018-03-20 | 삼성디스플레이 주식회사 | 플라즈마 처리장치 |
| US20130337657A1 (en) * | 2012-06-19 | 2013-12-19 | Plasmasi, Inc. | Apparatus and method for forming thin protective and optical layers on substrates |
| CN105190842B (zh) * | 2013-03-14 | 2017-07-28 | 佳能安内华股份有限公司 | 成膜方法、半导体发光元件的制造方法、半导体发光元件和照明装置 |
| JP6574547B2 (ja) | 2013-12-12 | 2019-09-11 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
| KR20220031132A (ko) * | 2017-06-27 | 2022-03-11 | 캐논 아네르바 가부시키가이샤 | 플라스마 처리 장치 |
-
2018
- 2018-06-26 WO PCT/JP2018/024147 patent/WO2019004185A1/ja active Application Filing
- 2018-06-26 TW TW107121806A patent/TWI679924B/zh active
- 2018-06-26 TW TW108125826A patent/TWI680697B/zh active
- 2018-06-26 JP JP2019526924A patent/JP6656479B2/ja active Active
- 2018-12-25 TW TW107146926A patent/TWI716796B/zh active
-
2019
- 2019-09-27 JP JP2019177728A patent/JP7145833B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| TW202001978A (zh) | 2020-01-01 |
| TWI679924B (zh) | 2019-12-11 |
| WO2019004185A1 (ja) | 2019-01-03 |
| TW201907756A (zh) | 2019-02-16 |
| TWI680697B (zh) | 2019-12-21 |
| JPWO2019004185A1 (ja) | 2020-01-09 |
| JP2020024926A (ja) | 2020-02-13 |
| JP7145833B2 (ja) | 2022-10-03 |
| TWI716796B (zh) | 2021-01-21 |
| TW201941667A (zh) | 2019-10-16 |
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