JP6642345B2 - レジスト材料及びパターン形成方法 - Google Patents

レジスト材料及びパターン形成方法 Download PDF

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Publication number
JP6642345B2
JP6642345B2 JP2016175472A JP2016175472A JP6642345B2 JP 6642345 B2 JP6642345 B2 JP 6642345B2 JP 2016175472 A JP2016175472 A JP 2016175472A JP 2016175472 A JP2016175472 A JP 2016175472A JP 6642345 B2 JP6642345 B2 JP 6642345B2
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Japan
Prior art keywords
group
carbon atoms
acid
branched
linear
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JP2016175472A
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English (en)
Japanese (ja)
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JP2017182033A (ja
Inventor
畠山　潤
畠山　　潤
長谷川　幸士
幸士 長谷川
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Shin Etsu Chemical Co Ltd
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Shin Etsu Chemical Co Ltd
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Application filed by Shin Etsu Chemical Co Ltd filed Critical Shin Etsu Chemical Co Ltd
Priority to US15/460,454 priority Critical patent/US10012903B2/en
Priority to KR1020170036891A priority patent/KR101933786B1/ko
Priority to TW106110061A priority patent/TWI617587B/zh
Publication of JP2017182033A publication Critical patent/JP2017182033A/ja
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Publication of JP6642345B2 publication Critical patent/JP6642345B2/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2016175472A 2016-03-28 2016-09-08 レジスト材料及びパターン形成方法 Active JP6642345B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US15/460,454 US10012903B2 (en) 2016-03-28 2017-03-16 Resist composition and pattern forming process
KR1020170036891A KR101933786B1 (ko) 2016-03-28 2017-03-23 레지스트 재료 및 패턴 형성 방법
TW106110061A TWI617587B (zh) 2016-03-28 2017-03-27 光阻材料及圖案形成方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016063442 2016-03-28
JP2016063442 2016-03-28

Publications (2)

Publication Number Publication Date
JP2017182033A JP2017182033A (ja) 2017-10-05
JP6642345B2 true JP6642345B2 (ja) 2020-02-05

Family

ID=60006062

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016175472A Active JP6642345B2 (ja) 2016-03-28 2016-09-08 レジスト材料及びパターン形成方法

Country Status (3)

Country Link
JP (1) JP6642345B2 (zh)
KR (1) KR101933786B1 (zh)
TW (1) TWI617587B (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7056524B2 (ja) * 2018-11-15 2022-04-19 信越化学工業株式会社 新規塩化合物、化学増幅レジスト組成物、及びパターン形成方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20100068778A (ko) * 2008-12-15 2010-06-24 제일모직주식회사 (메트)아크릴레이트 화합물, 감광성 폴리머, 및 레지스트 조성물
JP5377172B2 (ja) * 2009-03-31 2013-12-25 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物及びそれを用いたパターン形成方法
US8753794B2 (en) * 2009-08-28 2014-06-17 Kuraray Co., Ltd. N-acyl-β-lactam derivative, macromolecular compound, and photoresist composition
KR20130124302A (ko) * 2010-09-29 2013-11-13 가부시키가이샤 구라레 아크릴아미드 유도체, 고분자 화합물 및 포토레지스트 조성물
JP6078526B2 (ja) * 2012-02-27 2017-02-08 株式会社クラレ アクリル酸エステル誘導体およびその製造方法、中間体およびその製造方法、高分子化合物、フォトレジスト組成物
JP6048345B2 (ja) * 2012-09-05 2016-12-21 信越化学工業株式会社 レジスト材料及びこれを用いたパターン形成方法
JP6052207B2 (ja) * 2014-03-04 2016-12-27 信越化学工業株式会社 ポジ型レジスト材料及びこれを用いたパターン形成方法
JP6044566B2 (ja) * 2014-03-04 2016-12-14 信越化学工業株式会社 ポジ型レジスト材料及びこれを用いたパターン形成方法

Also Published As

Publication number Publication date
KR20170113210A (ko) 2017-10-12
KR101933786B1 (ko) 2018-12-28
TW201736411A (zh) 2017-10-16
TWI617587B (zh) 2018-03-11
JP2017182033A (ja) 2017-10-05

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