JP6635675B2 - 不純物ドープダイヤモンド及びその製造方法 - Google Patents

不純物ドープダイヤモンド及びその製造方法 Download PDF

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JP6635675B2
JP6635675B2 JP2015098261A JP2015098261A JP6635675B2 JP 6635675 B2 JP6635675 B2 JP 6635675B2 JP 2015098261 A JP2015098261 A JP 2015098261A JP 2015098261 A JP2015098261 A JP 2015098261A JP 6635675 B2 JP6635675 B2 JP 6635675B2
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impurity
doped diamond
diamond
doped
concentration
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JP2016213409A (ja
JP2016213409A5 (enExample
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新矢 大曲
新矢 大曲
山田　英明
英明 山田
茶谷原　昭義
昭義 茶谷原
真一 鹿田
真一 鹿田
杢野　由明
由明 杢野
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National Institute of Advanced Industrial Science and Technology AIST
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  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2015098261A 2015-05-13 2015-05-13 不純物ドープダイヤモンド及びその製造方法 Active JP6635675B2 (ja)

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JP2016213409A5 JP2016213409A5 (enExample) 2018-06-07
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JP7023477B2 (ja) * 2016-07-19 2022-02-22 国立研究開発法人産業技術総合研究所 ホウ素ドープダイヤモンド
JP6703683B2 (ja) 2017-12-20 2020-06-03 国立研究開発法人産業技術総合研究所 単結晶ダイヤモンドおよびそれを用いた半導体素子
WO2019123745A1 (ja) * 2017-12-20 2019-06-27 国立研究開発法人産業技術総合研究所 単結晶ダイヤモンドおよびそれを用いた半導体素子
CN111115625A (zh) * 2018-11-01 2020-05-08 深圳先进技术研究院 掺杂型金刚石粉的制备方法
JP7556509B2 (ja) * 2019-11-08 2024-09-26 住友電工ハードメタル株式会社 ダイヤモンド被覆工具及びダイヤモンド被覆工具の製造方法

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JPH03163820A (ja) * 1989-11-22 1991-07-15 Tokai Univ ダイヤモンドｎ型半導体およびダイヤモンドｐ―ｎ接合ダイオードの製造方法
JPH06321690A (ja) * 1993-05-13 1994-11-22 Matsushita Electric Ind Co Ltd 半導体ダイヤモンド膜の形成方法及び処理方法
JPH08330624A (ja) * 1995-06-02 1996-12-13 Kobe Steel Ltd ダイヤモンド発光素子
US6858080B2 (en) * 1998-05-15 2005-02-22 Apollo Diamond, Inc. Tunable CVD diamond structures
JP4691952B2 (ja) * 2004-10-15 2011-06-01 住友電気工業株式会社 ダイヤモンド基板及びその製造方法
JP5152836B2 (ja) * 2007-08-30 2013-02-27 独立行政法人産業技術総合研究所 ダイヤモンド薄膜積層体
JP5454867B2 (ja) * 2009-04-17 2014-03-26 独立行政法人産業技術総合研究所 単結晶ダイヤモンド基板
WO2012050157A1 (ja) * 2010-10-13 2012-04-19 独立行政法人産業技術総合研究所 ダイヤモンド電子素子及びその製造方法
JP5540296B2 (ja) * 2010-10-13 2014-07-02 独立行政法人産業技術総合研究所 ダイヤモンド電子素子及びその製造方法
JP6099260B2 (ja) * 2013-02-22 2017-03-22 学校法人早稲田大学 透明導電体及び透明導電体の製造方法

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