JP6634729B2 - Method for manufacturing semiconductor device - Google Patents

Description

  The present invention relates to a semiconductor device and a method for manufacturing a semiconductor device.

  In a conventional typical semiconductor device manufacturing process, a surface of a semiconductor wafer opposite to a circuit forming surface is polished to thin a silicon substrate of the semiconductor wafer, and then the semiconductor wafer is divided into a plurality of pieces. The semiconductor chips described above are manufactured, the obtained semiconductor chips are picked up by a collet, and each semiconductor chip is individually resin-sealed (Patent Document 1 and the like).

  In such a typical semiconductor device manufacturing process, various studies have been made so far from the viewpoint of improving the yield in order to prevent the semiconductor chip from being damaged during manufacturing.

  For example, in Patent Document 2, in order to prevent chipping (cracking) of a semiconductor wafer that occurs when the semiconductor wafer is separated into individual pieces, an adhesive sheet for surface protection is attached to the back surface of the semiconductor wafer, Has been disclosed in which a plurality of semiconductor chips are manufactured by singulating semiconductor chips.

JP-A-9-107046 JP 2011-210927 A

  The above-described prior art is expected to have a certain effect in that chipping (cracking) of the semiconductor wafer is prevented by an impact applied when the semiconductor wafer is singulated. In addition, the above-described prior art can be expected to have a certain effect in that chipping (breaking) of a semiconductor chip is prevented by an impact applied during secondary mounting. However, the present inventors have found that the yield is not sufficiently improved even if measures are taken to prevent chipping (cracking) that occurs during singulation of the semiconductor wafer or during secondary mounting. The inventors of the present invention have conducted intensive studies on factors that do not sufficiently improve the yield in the conventional manufacturing process, and as a result, for example, the semiconductor chip is damaged by an impact applied when the semiconductor chip is picked up by a handling device such as a collet. I found that there is a possibility.

  It has been confirmed that the problem that the semiconductor chip is broken by the impact applied when picked up by a handling device such as a collet described above tends to become more apparent in recent years in a process of thinning a semiconductor wafer. Was. In recent years, there has been an increasing demand for electronic devices on which semiconductor devices are mounted, such as miniaturization and weight reduction. In order to satisfy such demands, in recent semiconductor device manufacturing processes, when polishing the surface of the semiconductor wafer opposite to the circuit forming surface, the semiconductor wafer is thinned to a thickness of, for example, about 100 μm. Tend to. When the semiconductor wafer is thinned in this way, as described above, the problem that the semiconductor chip is damaged by an impact applied when picking up by a handling device such as a collet becomes remarkable.

  In the conventional semiconductor device manufacturing process, each semiconductor chip is individually sealed, so that there is still room for improvement in productivity.

  In view of the above, it is an object of the present invention to provide a semiconductor device with improved reliability and a method of manufacturing a semiconductor device with excellent reliability and productivity.

According to the present invention, in addition to a semiconductor chip, a solder bump provided on a circuit forming surface of the semiconductor chip, and a surface opposite to the circuit forming surface of the semiconductor chip and a side surface of the circuit forming surface, A sealing material that covers the circuit forming surface of the semiconductor chip, wherein a part of the solder bump is exposed, and the thickness of the sealing material that covers the circuit forming surface of the semiconductor chip is less than that of the solder. A method for manufacturing a semiconductor device having an average height of bumps of R and (1/4) R or more and (3/4) R or less ,
An adhesive member, comprising a plurality of semiconductor chips attached to the adhesive surface of the adhesive member, the plurality of semiconductor chips are arranged at a predetermined gap from each other, and provided on the circuit forming surface of the semiconductor chip Preparing a structure in which a part of the solder bump is embedded in the adhesive member, the solder bump is attached to the adhesive surface of the adhesive member, and the circuit formation surface is exposed. When,
A semiconductor sealing resin composition in a flowing state is brought into contact with a plurality of the semiconductor chips to fill the gap with the semiconductor sealing resin composition, and the circuit forming surface of the semiconductor chip and the circuit A step of covering and sealing the surface and the side surface opposite to the forming surface with the semiconductor sealing resin composition,
Curing the resin composition for semiconductor encapsulation,
And a method for manufacturing a semiconductor device.

  ADVANTAGE OF THE INVENTION According to the manufacturing method of this invention, in addition to the surface and the side surface opposite to the circuit formation surface of a semiconductor chip, even the circuit formation surface of the semiconductor chip is covered with the cured body of the semiconductor sealing resin composition. A semiconductor device that can be picked up by a collet in a protected state can be obtained. This prevents the handling device from directly contacting the semiconductor chip when the pickup is picked up by a handling device such as a collet, or is added to the semiconductor chip when the handling device such as a collet contacts. It is possible to reduce the influence of the impact. Therefore, according to the manufacturing method of the present invention, the semiconductor chip can be prevented from being damaged, and a semiconductor device having excellent reliability can be obtained. Further, according to the manufacturing method of the present invention, it is possible to collectively seal a plurality of semiconductor chips obtained without being arranged on a substrate after singulation, thereby improving production efficiency. Is possible.

  According to the present invention, a semiconductor device with improved reliability can be provided, and a method of manufacturing a semiconductor device with excellent reliability and productivity can be provided.

FIG. 2 is a cross-sectional view illustrating an example of the semiconductor device according to the embodiment. FIG. 6 is a diagram for explaining an example of the method for manufacturing the semiconductor device according to the embodiment. FIG. 6 is a diagram for explaining an example of the method for manufacturing the semiconductor device according to the embodiment. FIG. 6 is a diagram for explaining an example of the method for manufacturing the semiconductor device according to the embodiment. 5 is a configuration example of an apparatus that can be used when the gap between adjacent semiconductor chips is enlarged in the manufacturing method according to the embodiment. 5 is a configuration example of an apparatus that can be used when the gap between adjacent semiconductor chips is enlarged in the manufacturing method according to the embodiment. FIG. 6 is a diagram for explaining an example of the method for manufacturing the semiconductor device according to the embodiment.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In all the drawings, the same components are denoted by the same reference numerals, and description thereof will not be repeated.

<First embodiment>
FIG. 1 is a cross-sectional view illustrating an example of the semiconductor device 8 according to the present embodiment.
As shown in FIG. 1, a semiconductor device 8 according to the present embodiment includes a semiconductor chip 5, a solder bump 2 provided on a circuit forming surface (lower surface) of the semiconductor chip 5, and a circuit forming surface of the semiconductor chip 5. In addition to the opposite surface (top surface) and the side surface of the circuit forming surface, a sealing material 40 covering the circuit forming surface of the semiconductor chip 5 is provided, and a part of the solder bump 2 is exposed. As described above, in the semiconductor device 8 according to the present embodiment, the circuit forming surface of the semiconductor chip 5 is covered with the sealing material 40 in addition to the surface and the side opposite to the circuit forming surface of the semiconductor chip 5. A semiconductor chip 5 is provided. In this way, even when the semiconductor chip 5 is picked up by a collet when manufacturing the semiconductor device 8, it is possible to prevent the semiconductor chip 5 from being damaged. For this reason, the semiconductor device 8 obtained by the manufacturing process according to the present embodiment has higher reliability than the conventional semiconductor device.
According to the semiconductor device 8 according to the present embodiment, when the semiconductor device 8 is mounted on a substrate, the sealing material 40 and the substrate are different from the structure of the conventional semiconductor device in which the substrate is bonded to the sealing material. A structure in which the two are separated from each other without contact can be realized. As a result, it is possible to provide a semiconductor device 8 that is smaller than a conventional semiconductor device. Further, since the semiconductor device 8 has a structure different from the structure of a conventional semiconductor device in which a substrate is bonded to a sealing material, it can be directly mounted on a motherboard without an interposer. Furthermore, since the semiconductor device 8 can realize a structure in which the sealing material 40 and the substrate are separated from each other without contact, the adhesion at the interface between the substrate and the sealing material, which occurs in the conventional semiconductor device, can be realized. The problem of failure can be solved. Therefore, it is possible to realize the semiconductor device 8 which is more excellent in reliability than the conventional semiconductor device. In addition, the semiconductor device 8 has a configuration in which, in addition to the circuit forming surface of the semiconductor chip 5, the opposite surface and the side surface are covered and protected by the cured body 40 of the semiconductor sealing resin composition. Therefore, the semiconductor device is superior in chipping resistance as compared with the conventional semiconductor device.

  In addition, the semiconductor device 8 according to the present embodiment has excellent handling properties since the solder bumps 2 are partially exposed, and can be used in various processes. Specifically, the semiconductor device 8 according to the present embodiment can be mounted on various substrates such as a motherboard, an interposer, and a lead frame.

  In the semiconductor device 8 according to the present embodiment, the thickness of the sealing material 40 covering the circuit formation surface of the semiconductor chip 5 is preferably １ ／ R or more and ／ R when the average height of the solder bumps 2 is R. Or less, and more preferably 3 / 8R or more and 5 / 8R or less. Specifically, the thickness of the sealing material 40 covering the circuit formation surface of the semiconductor chip 5 is preferably 10 μm or more and 200 μm or less, and more preferably 20 μm or more and 180 μm or less. By doing so, it is possible to prevent the semiconductor chip 5 from being damaged by an impact applied to the semiconductor chip 5 when the semiconductor chip 5 is picked up by a collet when the semiconductor device 8 is manufactured. Thus, a semiconductor device 8 excellent in terms of electrical connectivity and reliability can be obtained.

  Here, the semiconductor device 8 shown in FIG. 1 has the opposite surface and the side surface covered with the sealing material 40 in addition to the circuit forming surface of the semiconductor chip 5, and a part of the solder bump 2 is exposed. is there. The semiconductor device 8 of FIG. 1 can realize a structure in which the sealing member 40 and the substrate are separated from each other without contact when the semiconductor device 8 is mounted on the substrate.

Next, a method for manufacturing the semiconductor device 8 will be described.
The method for manufacturing the semiconductor device 8 according to the present embodiment includes the adhesive member 10 or 30 and the plurality of semiconductor chips 5 attached to the adhesive surface of the adhesive member 10 or 30, and the plurality of semiconductor chips 5 And a part of the solder bump 2 provided on the circuit forming surface of the plurality of semiconductor chips 5 is attached to the adhesive surface of the adhesive member 10 or 30, and the circuit forming surface A step of preparing a structure 7 in which is exposed, and a step of bringing a semiconductor encapsulating resin composition 40 in a fluid state into contact with a plurality of semiconductor chips 5 to form a semiconductor encapsulating material in a gap between adjacent semiconductor chips 5. A step of filling the resin composition 40 and covering and sealing the circuit forming surface of the semiconductor chip 5 and the surface and the side opposite to the circuit forming surface with the semiconductor sealing resin composition 40; It is intended to include a step of curing the resin composition 40. By doing so, the semiconductor device 8 that can be picked up by the collet while the circuit forming surface of the semiconductor chip 5 as well as the opposite surface and the side surface are covered and protected by the cured body 40 of the resin composition for semiconductor encapsulation. Obtainable. This prevents the handling device from directly contacting the semiconductor chip 5 when picking up by a handling device such as a collet, or prevents the semiconductor chip 5 from being impacted when the handling device such as a collet contacts the semiconductor chip 5. It can be alleviated by the cured body 40 of the sealing resin composition. For this reason, according to the manufacturing method according to the present embodiment, it is possible to prevent the semiconductor chip 5 from being damaged by an impact applied when the semiconductor chip 5 is picked up by a handling device such as a collet. Therefore, it is possible to obtain the semiconductor device 8 having higher reliability than the conventional manufacturing process.
Further, in the method of manufacturing the semiconductor device 8 according to the present embodiment, the adhesive member 10 or 30 is preferably a member having on its surface an ultraviolet curing layer 210 in which the adhesive member is formed of an ultraviolet curing resin. Further, when the adhesive member 10 or 30 is a member having the above-described ultraviolet curing layer 210 on its surface, the structure 7 is preferably a structure in which a part of the solder bump 2 is embedded in the ultraviolet curing layer 210. .

  Further, according to the manufacturing method according to the present embodiment, it is possible to collectively seal a plurality of semiconductor chips 5 obtained without being arranged on a substrate after being separated into individual pieces. Can be improved in productivity. The semiconductor wafer 1 has a single-layer or multilayer wiring layer formed on a silicon substrate. Hereinafter, the surface of the semiconductor wafer 1 on which the wiring layer is formed will be referred to as a circuit forming surface.

  Here, the pressure-sensitive adhesive member 10 or 30 may be a single pressure-sensitive adhesive tape or a material having a pressure-sensitive adhesive layer formed on a supporting substrate. Hereinafter, an example in which the adhesive member 30 (hereinafter, also referred to as a transfer member 30) is formed by forming an ultraviolet-curable layer 210 made of an ultraviolet-curable resin on a support base material 200 will be described in the present embodiment. Such a manufacturing method will be described with reference to FIGS. The details of the dicing film 20, the transfer member 30, the adhesive member 10 (hereinafter, also referred to as the protective film 10), and the release film 50 used in each step of the manufacturing method according to the present embodiment will be described later.

  The manufacturing method according to the present embodiment shown in FIGS. 2 to 4 divides the semiconductor wafer 1 into individual pieces in a state where the dicing film 20 is attached to the surface of the semiconductor wafer 1 opposite to the circuit forming surface. A step of obtaining a plurality of semiconductor chips 5 in a bonded state; and a step of extending a region of the dicing film 20 to which the plurality of semiconductor chips 5 are bonded in an in-plane direction of the film to provide a space between adjacent semiconductor chips 5. And a step of attaching the transfer member 30 so that the solder bumps 2 of the semiconductor chip and the surface of the ultraviolet curing layer 210 of the transfer member 30 are in contact with each other, and a step of attaching the plurality of semiconductor chips 5 to the transfer member 30. A step of separating the dicing film 20 from the semiconductor chip 5 in a state where the resin composition 40 is in a fluidized state; The semiconductor chip 5 is pressed against the surface of the semiconductor chip 5 opposite to the circuit forming surface to fill the gap between the adjacent semiconductor chips 5 with the resin composition 40 for semiconductor encapsulation. It includes a step of covering and sealing the side surface and the side surface with the resin composition for semiconductor encapsulation 40, and a step of curing the resin composition for semiconductor encapsulation 40. However, the step of enlarging the gap between the adjacent semiconductor chips 5 does not necessarily need to be performed as described later in the third embodiment.

  Specifically, first, as shown in FIG. 2A, a semiconductor wafer 1 having a plurality of solder bumps 2 attached to a circuit forming surface is prepared.

  Next, as shown in FIG. 2B, in order to protect the circuit forming surface of the prepared semiconductor wafer 1, a protective film 10 is attached to the circuit forming surface, and the circuit forming surface is protected by the protective film. Cover with 10. By doing so, when polishing the surface opposite to the circuit forming surface of the semiconductor wafer 1 described later, an electronic component mounted on the circuit forming surface may be damaged by an impact applied to the circuit forming surface. Can be prevented.

  Next, as shown in FIG. 2C, the surface of the semiconductor wafer 1 on which the protective film 10 is attached is polished on the side opposite to the circuit forming surface. Specifically, the semiconductor wafer 1 on which the protective film 10 is stuck is fixed on a polishing apparatus, and the surface on the side opposite to the circuit forming surface is cleaned so that the semiconductor wafer 1 has a predetermined thickness. Grind.

  Further, in the manufacturing method according to the present embodiment, the surface opposite to the circuit forming surface of the semiconductor wafer 1 is polished in a state where the protective film 10 is attached as described above. It is possible to effectively prevent electronic components and the like mounted on the circuit forming surface of the wafer 1 from being damaged.

  Next, as shown in FIG. 2D, a dicing film is formed on the surface of the semiconductor wafer 1 obtained by polishing, on the side opposite to the circuit forming surface, with the protective film 10 adhered to the circuit forming surface. 20 is pasted. Next, as shown in FIG. 2E, the protective film 10 is peeled from the semiconductor wafer 1. At this time, it is preferable that the protective film 10 is separated from the semiconductor wafer 1 after reducing the adhesion between the protective film 10 and the semiconductor wafer 1. Specifically, by performing, for example, ultraviolet irradiation or heat treatment on the bonding portion between the protective film 10 and the semiconductor wafer 1, the adhesive layer of the protective film 10 forming the bonding portion is deteriorated. There is a method of reducing the adhesion.

  The semiconductor wafer 1 in a state where the dicing film 20 is adhered to the surface opposite to the circuit forming surface shown in FIG. A plurality of semiconductor chips 5 with the dicing film 20 shown in FIG. Note that a dicing blade, a laser, or the like can be used to singulate the semiconductor wafer 1 described above. Further, when the semiconductor wafer 1 is singulated, it is necessary that the dicing film 20 can be maintained in a state in which the obtained semiconductor chips 5 are adhered without being cut.

  Next, as shown in FIG. 3B, the dicing film 20 is expanded in the in-plane direction of the semiconductor chip 5, and the gap between the adjacent semiconductor chips 5 is enlarged to a predetermined gap. At this time, the gap between the adjacent semiconductor chips 5 is preferably equal. Specifically, the gap between the adjacent semiconductor chips 5 in the rectangular semiconductor chip 5 is such that a direction parallel to one side of the semiconductor chip 5 is a first direction, and a direction orthogonal to the first direction is a second direction. When expanded, it may be expanded at equal intervals only in the first direction or at equal intervals only in the second direction, but may be expanded at equal intervals in both the first direction and the second direction. Is preferred. Therefore, when expanding the gap between the adjacent semiconductor chips 5, it is preferable to expand the gap between the adjacent semiconductor chips 5 isotropically in the in-plane direction of the dicing film 20. Here, the manufacturing method according to this embodiment extends the dicing film 20 in the in-plane direction of the circuit formation surface of the semiconductor chip 5 as described above. For this reason, the dicing film 20 preferably has a configuration excellent in stretchability. When the gap between the adjacent semiconductor chips 5 is expanded to a predetermined gap, the dicing film 20 may be expanded using a known dicing apparatus. The configuration of the dicing film 20 will be described later.

Here, when the gap between the adjacent semiconductor chips 5 is enlarged, for example, the following device can be used.
FIGS. 5 and 6 show an example of the configuration of a device that can be used to increase the gap between adjacent semiconductor chips 5. 5A and 5B are views showing a state before the gap between the adjacent semiconductor chips 5 is enlarged, wherein FIG. 5A is a side sectional view and FIG. 5B is a plan view. 6A and 6B are views showing a state after the gap between the adjacent semiconductor chips 5 is enlarged, wherein FIG. 6A is a side sectional view and FIG. 6B is a plan view.

  The apparatus shown in FIGS. 5 and 6 includes a ring-shaped frame 100 for clamping around a dicing film 20 attached to a plurality of semiconductor chips 5 obtained by singulation, and a dicing film 20 inside the frame 100. An extension table 140 that is disposed below and expands the dicing film 20 by being moved upward, and a heating unit 130 that is provided on the extension table 140 and heats the extension table 140. The heating unit 130 is provided on a surface different from the contact surface of the dicing film 20 of the central portion 110 of the extension table 140.

  In addition, it is preferable that the temperature is uniform in a region where the plurality of semiconductor chips 5 on which the dicing film 20 is attached on the extension table 140 are arranged. By doing so, the expandability of the dicing film 20 can be uniformly controlled in the in-plane direction of the dicing film 20.

  5 and 6, the extensibility of the dicing film 20 can be improved by heating the extension table 140 with the heating unit 130.

  Thus, the apparatus of FIGS. 5 and 6 can move the extension base 140 upward while heating the central part 110 and the peripheral part 120 of the extension base 140. This makes it possible to move the expansion table 140 upward while uniformly improving the expandability of the dicing film 20 in the in-plane direction. Therefore, as shown in FIG. 6, the dicing film 20 can be uniformly expanded so that the gaps between the adjacent semiconductor chips 5 are equal.

  Next, as shown in FIG. 3C, with the dicing film 20 attached, the transfer member 30 is attached so as to extend over all the circuit forming surfaces of the plurality of semiconductor chips 5. At this time, the transfer member 30 is attached so as to cover only a part of the surface of the solder bump 2 so that the surface of the ultraviolet curing layer 210 of the transfer member 30 does not contact the circuit forming surface of the semiconductor chip 5. Specifically, when the transfer member 30 is attached to the semiconductor chip 5, the distance between the circuit forming surface of the semiconductor chip 5 and the surface of the ultraviolet curing layer 210 of the transfer member 30 is preferably 10 μm. The control is preferably performed so as to be not less than 200 μm and more preferably not more than 20 μm and not more than 180 μm. In the step of attaching the transfer member 30 to the semiconductor chip 5 described above, when viewed from the viewpoint of the embedded state of the solder bumps 2 provided on the circuit forming surface of the semiconductor chip 5, the average height of the solder bumps 2 is When R, a region of not less than 1 / 4R and not more than 3 / 4R from the tip of the solder bump 2 on the side opposite to the portion in contact with the circuit forming surface is embedded in the ultraviolet cured layer 210 of the transfer member 30. It is more preferable that the region of 3 / 8R or more and 5 / 8R or less be embedded in the ultraviolet curing layer 210 of the transfer member 30. In the manufacturing method according to the present embodiment, by controlling the degree of sticking of the transfer member 30, the region to be resin-sealed in the step of sealing with the semiconductor sealing resin composition 40 described later is adjusted. can do.

  Next, as shown in FIG. 3D, the dicing film 20 is peeled from the semiconductor chip 5. As described above, the transfer member 30 is stuck in a state where the dicing film 20 is stuck, and thereafter, the dicing film 20 is peeled off. The member 30 can be attached to the semiconductor chip 5. It is preferable that the dicing film 20 be separated from the semiconductor chip 5 after reducing the adhesion between the dicing film 20 and the semiconductor chip 5. Specifically, by performing, for example, ultraviolet irradiation or heat treatment on the bonding site between the dicing film 20 and the semiconductor chip 5, the adhesive layer of the dicing film 20 forming the bonding site is deteriorated. There is a method of reducing the adhesion.

  The transfer member 30 is not particularly limited. For example, the transfer member 30 has heat resistance enough to withstand the heat applied to cure the semiconductor encapsulating resin composition 40 described below, and It is preferable that the semiconductor chip 5 to be fixed has such an adhesive property that the semiconductor chip 5 does not come off. The transfer member 30 may be a single piece of an adhesive tape, or may be one obtained by attaching an adhesive tape to a plate-shaped member made of metal, plastic, or the like to impart rigidity. In the present embodiment, a material obtained by attaching an adhesive tape including the ultraviolet curing layer 210 to a metal plate member made of 42 alloy was used.

  Next, as shown in FIG. 3E, a resin composition 40 for semiconductor encapsulation which is in a fluid state by being melted on the release film 50 is prepared. Then, as shown in FIG. 3 (f), the resin composition 40 for semiconductor encapsulation which is in a fluidized state by being melted is pressed against the surface of the plurality of semiconductor chips 5 on the side opposite to the circuit forming surface, The gap between the adjacent semiconductor chips 5 is filled with the semiconductor sealing resin composition 40, and the circuit forming surface of the semiconductor chip 5 is covered with the semiconductor sealing resin composition 40, and the opposite surface and the side surface are sealed. Stop. That is, the gap between the adjacent semiconductor chips 5 is filled with the semiconductor sealing resin composition 40 in a flowing state, and the circuit forming surface of the semiconductor chip 5 is formed so that a part of the solder bump 2 is exposed. The surface opposite to the surface and the side surface of the circuit forming surface are sealed with the semiconductor sealing resin composition 40. By doing so, when the manufactured semiconductor chip 5 is picked up by a collet, the site to be adsorbed by the collet can be protected by the cured body 40 of the resin composition for sealing a semiconductor body. Thus, the obtained semiconductor chip 5 is handled with a handling device such as a collet while the circuit forming surface of the semiconductor chip 5 and the opposite surface and side surface thereof are covered and protected by the cured body of the semiconductor sealing resin composition 40. Will be able to pick it up. For this reason, according to the manufacturing method according to the present embodiment, it is possible to prevent the possibility that the semiconductor chip 5 is damaged by an impact applied when the semiconductor chip 5 is picked up by a handling device such as a collet. .

  Here, the semiconductor encapsulating resin composition 40 in a fluid state may be a thermosetting resin composition in a molten state or a liquid resin composition, and may be formed into a film. The cured resin composition may be in a softened state.

Hereinafter, the step of sealing the semiconductor chip 5 will be described in detail using a case where a solid granular resin composition is used as the semiconductor sealing resin composition 40 as an example.
The method for sealing the semiconductor chip 5 using the resin composition 40 for semiconductor sealing is not particularly limited, and examples thereof include a transfer molding method, a compression molding method, and an injection molding method. A compression molding method in which the displacement of the chip 5 does not easily occur is preferable. When the semiconductor chip 5 is sealed by compression molding, resin sealing may be performed using a powdery resin composition. The details of the semiconductor sealing resin composition 40 will be described later.

  Specifically, a resin material supply container containing a granular resin composition is placed between the upper mold and the lower mold of the compression mold. Next, the semiconductor chip 5 to which the transfer member 30 is attached is fixed to one of the upper mold and the lower mold of the compression molding die by fixing means such as clamping or suction. In the following, an example is described in which the semiconductor chip 5 is fixed to the upper die of a compression mold so that the surface opposite to the circuit forming surface faces the resin material supply container.

Next, under reduced pressure, while narrowing the distance between the upper mold and the lower mold of the mold, a resin material supply mechanism such as a shutter constituting the bottom surface of the resin material supply container removes the weighed granular resin composition into the lower mold. Is supplied into the lower mold cavity provided in. It is necessary to previously set the release film 50 in the mold cavity. As a result, the granular resin composition is heated to a predetermined temperature in the lower mold cavity, and as a result, the molten semiconductor sealing resin composition 40 can be prepared on the release film 50. Next, the upper mold and the lower mold of the mold are joined to press the resin composition 40 for sealing the semiconductor in a molten state against the semiconductor chip 5 fixed to the upper mold. By doing so, the gap formed between the adjacent semiconductor chips 5 can be filled with the semiconductor sealing resin composition 40 in a molten state, and the circuit forming surface of the semiconductor chip 5 and the side opposite to the circuit forming surface. And the side surface of the circuit forming surface can be covered with the resin composition 40 for semiconductor encapsulation. Thereafter, the semiconductor encapsulating resin composition 40 is cured while maintaining the state in which the upper mold and the lower mold of the mold are joined.
Here, in the case of performing compression molding, it is preferable to perform resin sealing while reducing the pressure inside the mold, and it is more preferable to perform the vacuum molding. By doing so, it is possible to fill the gap formed between the adjacent semiconductor chips 5 with the semiconductor sealing resin composition 40 satisfactorily without leaving an unfilled portion.

  The molding temperature in the compression molding is not particularly limited, but is preferably from 50 to 200 ° C, particularly preferably from 80 to 180 ° C. The molding pressure is not particularly limited, but is preferably 0.5 to 12 MPa, and particularly preferably 1 to 10 MPa. Further, the molding time is preferably 30 seconds to 15 minutes, and particularly preferably 1 to 10 minutes. By setting the molding temperature, pressure, and time within the above ranges, it is possible to prevent both generation of a portion where the resin composition 40 for semiconductor encapsulation in a molten state is not filled and misalignment of the semiconductor chip 5. Can be.

  Next, as shown in FIG. 4A, the release film 50 is peeled off.

  Next, as shown in FIG. 4B, for example, in a state where the transfer member 30 is attached to the semiconductor chip 5, the cured body of the semiconductor sealing resin composition 40 filled up to the gap or less is cut, The plurality of semiconductor chips 5 sealed by the sealing resin composition 40 are singulated. At this time, the transfer member 30 may be cut together with the cured body of the resin composition 40 for semiconductor encapsulation, or may be in a state of being stuck over a plurality of semiconductor chips 5 without being cut. However, from the viewpoint of improving the productivity of the semiconductor device 8, when the semiconductor chip 5 is divided into individual pieces, the transfer member 30 can be maintained in a state of being stuck over the semiconductor chip 5 without being cut. Is preferable. Note that a dicing blade, a laser, or the like can be used to singulate the semiconductor chip 5 described above.

  Next, as shown in FIG. 4C, the transfer member 30 is separated from the semiconductor device 8. By doing so, it is possible to manufacture the semiconductor device 8 according to the present embodiment. The transfer member 30 is preferably separated from the semiconductor chip 5 after reducing the adhesion between the transfer member 30 and the semiconductor device 8. Specifically, for example, by performing ultraviolet irradiation or heat treatment on the bonding portion between the transfer member 30 and the semiconductor chip 5, the adhesive layer of the transfer member 30 forming the bonding portion is deteriorated. There is a method of reducing the adhesion.

  Further, the obtained semiconductor device 8 can be mounted on a substrate as needed. When the manufactured semiconductor device is mounted on a substrate, a known device such as a flip chip bonder or a die bonder can be used.

  According to the manufacturing method according to the present embodiment, a handling device such as a collet or the like is provided with the circuit forming surface of the semiconductor chip 5 and the opposite surface and side surface covered and cured by the cured body 40 of the resin composition for semiconductor encapsulation. Thus, a semiconductor chip 5 that can be picked up can be obtained. This can prevent a handling device such as a collet from directly contacting the semiconductor chip 5, and can reduce an impact applied to the semiconductor chip 5 when picked up by the handling device such as a collet. Can be alleviated by the cured body 40. Therefore, according to the manufacturing method according to the present embodiment, it is possible to prevent the possibility that the semiconductor chip 5 is damaged by an impact applied when picking up by a handling device such as a collet. That is, according to the manufacturing method according to the present embodiment, it is possible to reduce the influence of the impact applied to the semiconductor chip 5 when picking up by sucking with a handling device such as a collet. Therefore, according to the manufacturing method according to the present embodiment, a semiconductor device having excellent reliability can be manufactured as compared with the conventional manufacturing method. Further, according to the manufacturing method according to the present embodiment, it is possible to collectively seal a plurality of semiconductor chips 5 obtained without being arranged on a substrate after singulation with a resin. For this reason, it is possible to dramatically improve the production efficiency as compared with the conventional manufacturing method. Further, when the semiconductor device 8 obtained by the manufacturing method according to the present embodiment is mounted on a substrate, the structure is such that the sealing material 40 and the substrate are separated from each other. The resulting poor adhesion can be suppressed, and the reliability can be further improved.

  In the present embodiment, the protective film 10 is used to protect the circuit forming surface of the semiconductor wafer 1 when polishing the surface of the semiconductor wafer 1 opposite to the circuit forming surface. As will be described later in the embodiment, the function of the dicing film 20 used to singulate the semiconductor wafer 1 and the surface and the side opposite to the circuit forming surface of the semiconductor chip 5 in the embodiment are covered and sealed. It may also have the function of the transfer member 30 used when stopping. For this reason, from the viewpoint of production efficiency, the manufacturing method according to the third embodiment described later is superior, but according to the manufacturing method according to the present embodiment, different adhesive members 10 and 30 are used in each manufacturing process. There is also an advantage that the adhesive members 10 and 30 can be properly used for maintaining the strength thereof. That is, according to the manufacturing method of the present embodiment, it is possible to accurately manufacture a semiconductor device having excellent reliability.

<Second embodiment>
FIG. 7 is a diagram illustrating an example of the method for manufacturing the semiconductor device according to the embodiment.
As shown in FIG. 7, the manufacturing method according to the present embodiment includes a protective film 10 formed on a support base material 250 and having an ultraviolet-curable layer 260 formed of an ultraviolet-curable resin on the surface; And a plurality of semiconductor chips 5 attached to the surface of the ultraviolet curing layer 260 are prepared, and while the state in which the protective film 10 is attached to the plurality of semiconductor chips 5 is maintained. The third embodiment differs from the first embodiment in that the semiconductor chip 5 is sealed. Specifically, the semiconductor wafer 1 on which the protective film 10 is adhered is divided into individual pieces, and a plurality of semiconductor chips 5 on which the protective film 10 is adhered as shown in FIG. When the semiconductor wafer 1 is divided into individual pieces, it is necessary that the protective film 10 can be maintained in a state in which the obtained semiconductor chips 5 are attached without being cut. Next, as shown in FIG. 7B, the protective film 10 is expanded in the in-plane direction of the semiconductor chip 5, and the gap between the adjacent semiconductor chips 5 is enlarged to a predetermined gap. Next, as shown in FIGS. 7C and 7D, the resin composition 40 for semiconductor encapsulation in a flowing state is brought into contact with the surface of the plurality of semiconductor chips 5 on the side opposite to the circuit forming surface, The gap between the adjacent semiconductor chips 5 is filled with the semiconductor sealing resin composition 40, and the circuit forming surface of the semiconductor chip 5 is covered with the semiconductor sealing resin composition 40, and the opposite surface and the side surface are sealed. Stop. Thus, the semiconductor device 8 having the same configuration as that of the first embodiment can be obtained. Also, according to the present embodiment, the same effects as those of the first embodiment can be obtained. In addition, according to the manufacturing method of the present embodiment, the manufacturing process of the semiconductor device 8 can be simplified, so that the production efficiency can be further improved as compared with the conventional manufacturing method. Become.

<Third embodiment>
In the manufacturing method according to the present embodiment, the region to which the plurality of semiconductor chips 5 are adhered in the dicing film 20 described in the first embodiment with reference to FIGS. The third embodiment differs from the first embodiment in that there is no step of expanding the gap between adjacent semiconductor chips 5 by expanding inward. Specifically, the manufacturing method according to the present embodiment detects the individual semiconductor chips 5 attached on the dicing film 20 using a known semiconductor chip detection device, and determines that the interval between the plurality of semiconductor chips 5 is small. If irregular, laser dicing is performed to correct the interval so that it becomes regular. That is, the manufacturing method according to the present embodiment is a method of manufacturing the semiconductor device 8 starting from FIG. 3B without passing through the configuration of FIG. Here, by separating the semiconductor wafer 1 in a state where the dicing film 20 is attached to the surface opposite to the circuit forming surface shown in FIG. 2E, the gap between the adjacent semiconductor chips 5 is reduced. In order to obtain the state shown in FIG. 3B without passing through the configuration shown in FIG. 3A, the interval between the solder bumps 2 mounted on the semiconductor wafer 1 may be adjusted. Thus, the semiconductor device 8 having the same configuration as that of the first embodiment can be obtained.

  Next, the configurations of the resin composition 40 for semiconductor encapsulation, the dicing film 20, the transfer member 30, the protective film 10, and the release film 50 according to each embodiment will be described.

<Semiconductor sealing resin composition 40>
Hereinafter, an embodiment in which the resin composition for semiconductor encapsulation 40 is a granular resin composition will be described in detail, but is not limited thereto.

  The granular resin composition according to the present embodiment preferably contains an epoxy resin as a constituent material. The epoxy resin includes, for example, all monomers, oligomers and polymers having two or more epoxy groups in one molecule, and the molecular weight and molecular structure are not particularly limited. Specifically, crystalline epoxy resins such as biphenyl type epoxy resin, bisphenol A type epoxy resin, bisphenol F type epoxy resin, stilbene type epoxy resin, hydroquinone type epoxy resin; cresol novolak type epoxy resin, phenol novolak type epoxy resin, Novolak type epoxy resins such as naphthol novolak type epoxy resins; phenol aralkyl type epoxy resins such as phenylene skeleton-containing phenol aralkyl type epoxy resins, biphenylene skeleton containing phenol aralkyl type epoxy resins, and phenylene skeleton containing naphthol aralkyl type epoxy resins; triphenol methane type epoxy resins Trifunctional epoxy resins such as epoxy resins and alkyl-modified triphenolmethane-type epoxy resins; dicyclopentadiene-modified phenol-type epoxy resins A modified phenol-type epoxy resin such as a terpene-modified phenol-type epoxy resin; a heterocyclic-containing epoxy resin such as a triazine nucleus-containing epoxy resin; and these may be used alone or in combination of two or more. .

  Further, the method for obtaining a granular resin composition is not particularly limited, for example, inside the rotor composed of a cylindrical outer peripheral portion having a plurality of small holes and a disk-shaped bottom, A method in which a melt-kneaded resin composition is supplied, and the resin composition is passed through small holes by centrifugal force obtained by rotating a rotor (hereinafter, also referred to as “centrifugal milling method”); After preliminarily mixing the raw material components with a mixer, heating and kneading with a kneading machine such as a roll, kneader or extruder, then cooling and pulverizing the pulverized product, and removing coarse particles and fine powder using a sieve. (Hereinafter, also referred to as “pulverizing and sieving method”); after preliminarily mixing each raw material component with a mixer, heat kneading is performed using an extruder in which a die having a plurality of small diameters arranged at the tip of a screw is installed. Together with the strike through the small holes located in the die. How the molten resin come extruded into command shape obtained by cutting with a cutter substantially parallel to slide and rotate on the die face (hereinafter, also referred to as "hot cut method".), And the like. In any method, desired particle size distribution and granule density can be obtained by selecting kneading conditions, centrifugal conditions, sieving conditions, cutting conditions, and the like. A particularly preferred production method is a centrifugal milling method, and the resulting granular resin composition can stably express a desired particle size distribution and granule density. It is preferable in terms of prevention. In addition, in the centrifugal milling method, since the particle surface can be smoothed to some extent, the particles are not caught or the frictional resistance with the conveying path surface does not increase, and the bridge at the supply port to the conveying path ( It is also preferable from the viewpoint of prevention of clogging) and prevention of stagnation on the transport path. In addition, in the centrifugal milling method, since the particles are formed using a centrifugal force from a molten state, voids are included in the particles to some extent, and the density of the granules can be lowered to some extent, which is advantageous in terms of transportability in compression molding.

  On the other hand, in the pulverizing sieving method, although it is necessary to consider a method of treating a large amount of fine powder and coarse particles generated by sieving, a sieving apparatus or the like is used in an existing production line of the resin composition 40 for semiconductor encapsulation. Therefore, it is preferable in that the conventional production line can be used as it is. In addition, the pulverizing and sieving method expresses the particle size distribution of the present invention, such as selection of a sheet thickness when forming a molten resin into a sheet before pulverization, selection of pulverization conditions and screen at the time of pulverization, selection of a sieve at the time of sieving and the like. Since there are many factors that can be controlled independently, it is preferable in that there are many options for means for adjusting to a desired particle size distribution. Further, the hot cutting method is also preferable in that a conventional production line can be used as it is, for example, only by adding a hot cutting mechanism to the tip of the extruder.

  As a method of obtaining the above-mentioned tablet-shaped resin composition, for example, each raw material component is mixed with a mixer such as a mixer, and further heated and melted and kneaded with a kneader such as a roll, a kneader or an extruder, and cooled, and then pulverized. The obtained product is obtained by tableting into a tablet.

  As a method of obtaining the above-mentioned sheet-shaped resin composition, for example, a varnish in which each raw material component or a resin composition in which each component is previously mixed is dissolved or dispersed in an organic solvent or the like is prepared, and is coated and dried on a film. To form a sheet. The method of coating is not particularly limited, and examples thereof include a method using a coating machine such as a comma coater and a die coater, and a method using printing such as stencil printing or gravure printing. Alternatively, a kneaded material may be prepared by directly kneading the resin composition with a kneader or the like, and the kneaded material thus obtained may be extruded to form a sheet.

<Dicing film 20>
The dicing film 20 according to the present embodiment is capable of maintaining a state in which the semiconductor wafer 1 is adhered to the obtained semiconductor chip 5 without being cut when the semiconductor wafer 1 is cut into pieces. The dicing film 20 is not particularly limited as long as the dicing film 20 adheres to the semiconductor wafer 1. For example, the dicing film 20 may be composed of a support film and an adhesive layer.

  The constituent material of the support film is, for example, polyethylene, polypropylene, ethylene-propylene copolymer, polyolefin, polybutene, polybutadiene, polymethylpentene, polyvinyl chloride, polyvinylidene chloride, vinyl chloride copolymer, polyethylene terephthalate, polybutylene terephthalate , Polyethylene naphthalate, polyurethane, ethylene / vinyl acetate copolymer, ionomer, ethylene / (meth) acrylic acid copolymer, ethylene / (meth) acrylate copolymer, polystyrene, vinyl polyisoprene, polycarbonate, polyphenylene sulfide , Selected from the group consisting of polyetheretherketone, acrylonitrile-butadiene-styrene copolymer, polyimide, polyetherimide, polyamide, and fluororesin It preferably contains one or more resins.

  In addition, the surface of the support film can be subjected to a chemical or physical surface treatment in order to enhance the adhesion to the pressure-sensitive adhesive layer. The support film may contain various additives (filler, plasticizer, antioxidant, flame retardant, antistatic agent) as long as the effects of the invention are not impaired.

  Further, the pressure-sensitive adhesive layer of the dicing tape is formed of a first resin composition including an acrylic pressure-sensitive adhesive, a rubber-based pressure-sensitive adhesive, a vinylalkyl ether-based pressure-sensitive adhesive, a silicone-based pressure-sensitive adhesive, a polyester-based pressure-sensitive adhesive, and the like. Acrylic pressure-sensitive adhesives are preferable among these.

<Transfer member 30 (adhesive member 30)>
Next, as described above, the transfer member 30 according to the present embodiment is fixed on the transfer member 30 with heat resistance enough to withstand the heat applied to cure the semiconductor sealing resin composition 40. It is preferable that the semiconductor chip 5 has such an adhesive property that the semiconductor chip 5 does not come off. Specifically, it is preferable that the transfer member 30 according to the present embodiment has a configuration in which the support substrate 200 and the ultraviolet curing layer 210 are laminated.

  The ultraviolet curing layer 210 is formed of a resin composition containing a thermoplastic resin and an ultraviolet curing resin. Here, the ultraviolet-curable resin refers to a synthetic resin in which an ultraviolet-curable monomer, an ultraviolet-curable oligomer, or the like is chemically changed from a liquid to a solid in response to ultraviolet light energy.

  Specific examples of the thermoplastic resin include a polyimide resin such as a polyimide resin and a polyetherimide resin, a polyamide resin such as a polyamide resin and a polyamideimide resin, and an acrylic resin. Among them, an acrylic resin is preferable from the viewpoint of improving the initial adhesion to the solder bump 2. Note that the initial adhesion indicates the adhesion at an initial stage when the semiconductor chip 5 and the transfer member 30 are bonded. That is, the initial adhesion means the adhesion before the transfer member 30 is subjected to the curing treatment.

  Specific examples of the acrylic resin include acrylic acid, methacrylic acid, acrylates such as methyl acrylate and ethyl acrylate, methacrylates such as methyl methacrylate and ethyl methacrylate, acrylonitrile, polymers such as acrylamide and the like. And a copolymer with the above monomer. Among them, an acrylic resin (especially an acrylic acid copolymer) having a compound having an epoxy group, a hydroxyl group, a carboxyl group, a nitrile group or the like is preferable. Thereby, the adhesion to the adherend can be further improved.

  Specific examples of the ultraviolet-curable resin include an ultraviolet-curable resin mainly containing an acrylic compound, an ultraviolet-curable resin mainly containing a urethane acrylate oligomer or a polyester urethane acrylate oligomer, an epoxy resin, and a vinylphenol-based resin. An ultraviolet curable resin containing at least one selected from the group as a main component is exemplified. Among these, from the viewpoint of improving initial adhesion, an ultraviolet curable resin containing an acrylic compound as a main component is preferable. Specific examples of such an acrylic compound include acrylic acid ester or methacrylic acid ester monomers. Specifically, specific examples of the acrylic compound include ethylene glycol diacrylate, ethylene glycol dimethacrylate, 1,6-hexanediol diacrylate, 1,6-hexanediol dimethacrylate, glycerin diacrylate, and dimethacrylic acid. Glycerin, bifunctional acrylates such as 1,10-decanediol diacrylate, 1,10-decanediol dimethacrylate, trimethylolpropane triacrylate, trimethylolpropane trimethacrylate, pentaerythritol triacrylate, pentaerythritol trimethacrylate, Examples include polyfunctional acrylates such as dipentaerythritol hexaacrylate and dipentaerythritol hexamethacrylate. Among these, acrylates are preferred, and acrylates or alkyl methacrylates having 1 to 15 carbon atoms at the ester site are particularly preferred.

  The content of the ultraviolet curable resin is preferably from 20 to 55 parts by weight, more preferably from 30 to 40 parts by weight, based on 100 parts by weight of the thermoplastic resin. When the content of the ultraviolet curable resin is equal to or more than the above lower limit, good adhesion can be maintained. On the other hand, when the content of the ultraviolet curable resin is equal to or less than the upper limit, good workability can be maintained.

  When an acrylic or methacrylic ester of a UV-curable resin having a hydroxyl group such as a hydroxy group in the molecule is used in combination as the UV-curable resin, the adhesion to the adherend and the adhesive properties are further improved. Can be done.

  It is preferable that the resin composition containing the thermoplastic resin and the ultraviolet curable resin contains a photopolymerization initiator. By doing so, the surface of the transfer member 30 can be hardened by irradiating ultraviolet rays, so that the peeling characteristics of the transfer member 30 can be improved.

  Specific examples of the photopolymerization initiator include benzophenone, acetophenone, benzoin, benzoin isobutyl ether, methyl benzoin benzoate, benzoin benzoic acid, benzoin methyl ether, benzyl finyl sulfide, benzyl, dibenzyl, diacetyl and the like.

  The resin composition containing a thermoplastic resin and an ultraviolet curable resin preferably further contains a thermosetting resin from the viewpoint of improving the heat resistance of the transfer member 30. Specific examples of such a thermosetting resin include phenol novolak resin, cresol novolak resin, novolak type phenol resin such as bisphenol A novolak resin, phenol resin such as resol phenol resin, bisphenol A epoxy resin, bisphenol F epoxy resin and other bisphenol. Epoxy resin, novolak epoxy resin such as novolak epoxy resin, cresol novolak epoxy resin, biphenyl epoxy resin, stilbene epoxy resin, triphenolmethane epoxy resin, alkyl-modified triphenolmethane epoxy resin, epoxy resin containing triazine nucleus Resins having a triazine ring, such as epoxy resins such as dicyclopentadiene-modified phenolic epoxy resins, urea (urea) resins, and melamine resins; Sum polyester resins, bismaleimide resins, polyurethane resins, diallyl phthalate resins, silicone resins, resins having a benzoxazine ring, cyanate ester resins. These may be used alone or in combination of two or more. Among them, an epoxy resin is preferable.

  As such an epoxy resin, a crystalline epoxy resin is preferable. Examples of such a crystalline epoxy resin include those having a rigid structure such as a biphenyl skeleton, a bisphenol skeleton, or a stilbene skeleton in a main chain and having a relatively low molecular weight. The reason that the crystalline epoxy resin is preferable is that it is a solid that is crystallized at room temperature, but rapidly melts and changes to a low-viscosity liquid in a temperature range higher than the melting point. Thereby, the initial adhesion can be further improved.

The above-mentioned resin composition preferably further contains a filler from the viewpoint of improving heat resistance. Thereby, heat resistance can be further improved.
Specific examples of the filler include inorganic fillers such as silver, titanium oxide, silica, and mica; and organic fillers of fine particles such as silicon rubber and polyimide. Among these, an inorganic filler such as a silica filler is preferable.

  In addition, as the support base material 200, for example, heat resistance and chemical resistance made of polyolefin such as polyethylene and polypropylene, ethylene vinyl acetate copolymer, polyester, polyimide, polyethylene terephthalate, polyvinyl chloride, polyamide, polyurethane and the like are used. Any good film can be used. The thickness of the base material layer is not particularly limited, but is usually preferably 30 to 500 μm.

<Protective film 10 (adhesive member 10)>
Next, the protective film 10 protects the circuit forming surface when polishing the surface of the semiconductor wafer 1 opposite to the circuit forming surface. The protective film 10 only needs to adhere to the semiconductor wafer 1, and for example, may have a configuration in which the support base material 200 (back grinding tape) and the ultraviolet curing layer 260 are laminated. As shown in FIG. 7, the protective film 10 may be used as a protective member when the semiconductor wafer 1 is singulated, or the protective film 10 may be expanded in an in-plane direction, Heat may be applied to cure the resin composition 40 for semiconductor encapsulation. For this reason, the protective film 10 has a certain degree of expandability, heat resistance enough to withstand the heat applied to cure the semiconductor encapsulating resin composition 40, and removal of the semiconductor chip 5 fixed on the protective film 10. It is preferable that the structure has both adhesiveness and a degree of adhesiveness that does not separate.

  The protective film 10 includes a back grinding tape and an ultraviolet curable layer 260. The release film 50 may be provided between the back grinding tape and the ultraviolet curing layer 260. This facilitates peeling between the back grinding tape and the ultraviolet cured layer 260. Here, the ultraviolet curing layer 260 can be formed of the same material as the ultraviolet curing layer 210 formed on the transfer member 30 described above.

  As the back grind tape, for example, a film having excellent heat resistance and chemical resistance made of polyethylene, polyolefin such as polypropylene, ethylene vinyl acetate copolymer, polyester, polyimide, polyethylene terephthalate, polyvinyl chloride, polyamide, polyurethane, etc. Can be used. The thickness of the back grinding tape is usually preferably 30 to 500 μm.

<Release film 50>
Next, the release film 50 according to the present embodiment may have a configuration having excellent release properties, and for example, preferably has a release layer containing a polyester resin material.

  The release film 50 according to the present embodiment is a release film 50 having a release layer (first release layer) containing a polyester resin material.

  In the release film 50 according to the present embodiment, the release layer refers to a surface that comes into contact with the object at least when the release film 50 is disposed on the object (hereinafter, also referred to as a “release surface”). The polyester resin is a polycondensate of a polycarboxylic acid (dicarboxylic acid) and a polyalcohol (diol), and is a compound having a plurality of carboxyl groups (—COOH).

  In the present embodiment, specific examples of the polyester resin material include polyalkylene terephthalate resins such as polyethylene terephthalate resin, polybutylene terephthalate resin, polytrimethylene terephthalate resin, and polyhexamethylene terephthalate resin. Among these, it is preferable to use polybutylene terephthalate resin.

  The release film 50 according to the present embodiment may have a single-layer structure or a multilayer structure.

Although the embodiments of the present invention have been described above, these are merely examples of the present invention, and various configurations other than the above can be adopted.
Further, in the above embodiment, the case where the semiconductor chip 5 is sealed and compression-molded using the granular semiconductor sealing resin composition 40 has been described as an example. The liquid semiconductor encapsulating resin composition 40 may be applied to the surface opposite to the surface by spin coating, printing, or dispensing, and then dried. The composition 40 may be caused to flow into the gap between the adjacent semiconductor chips 5 by utilizing the capillary phenomenon.

  In the above embodiment, when the semiconductor chip 5 is sealed, the case where the semiconductor chip 5 is compression-formed using the granular semiconductor sealing resin composition 40 is described as an example, but the semiconductor chip 5 is processed into a sheet shape. The resin composition 40 for semiconductor encapsulation may be compression molded by the following method.

  The semiconductor chip 5 to which the transfer member 30 is attached is fixed to one of the upper mold and the lower mold of the compression molding die by fixing means such as clamping and suction. In the following, an example is described in which the semiconductor chip 5 is fixed to the upper die of a compression mold so that the surface opposite to the circuit forming surface faces the resin material supply container.

  Next, a sheet-shaped resin composition 40 for semiconductor encapsulation is arranged in the lower mold cavity of the mold so as to be at a position corresponding to the semiconductor chip 5 fixed to the upper mold of the mold. Next, by reducing the distance between the upper mold and the lower mold of the mold under reduced pressure, the sheet-shaped resin composition 40 for semiconductor encapsulation is heated to a predetermined temperature in the cavity of the lower mold to be in a molten state. Thereafter, the upper and lower molds of the mold are joined to press the molten semiconductor sealing resin composition 40 against the semiconductor chip 5 fixed to the upper mold. By doing so, the gap formed between the adjacent semiconductor chips 5 can be filled with the semiconductor sealing resin composition 40 in a molten state, and the circuit forming surface of the semiconductor chip 5 and the side opposite to the circuit forming surface. And the side surface of the circuit forming surface can be covered with the resin composition 40 for semiconductor encapsulation in a molten state. Thereafter, the semiconductor encapsulating resin composition 40 is cured for a predetermined time while maintaining the state in which the upper mold and the lower mold of the mold are joined. By doing so, it is possible to fill the gap formed between the adjacent semiconductor chips 5 with the semiconductor sealing resin composition 40 satisfactorily without leaving an unfilled portion.

Further, the resin composition 40 for semiconductor encapsulation processed into a sheet shape can be subjected to lamination by, for example, the following method.
First, the sheet-shaped resin composition 40 for semiconductor encapsulation prepared in a roll shape is attached to an unwinding device of a vacuum pressurized laminator and connected to a winding device. Next, the base substrate 10 on which the first metal pattern 50 is formed is transported to a diaphragm (elastic film) type laminator. Next, when pressing is started under reduced pressure, the sheet-shaped semiconductor encapsulating resin composition 40 is heated to a predetermined temperature to be in a molten state, and thereafter, the semiconductor encapsulating resin composition 40 in the molten state is passed through a diaphragm. By pressing the semiconductor chip 5 by pressing the semiconductor chip 5, the gap formed between the adjacent semiconductor chips 5 can be filled with the resin composition 40 for semiconductor encapsulation in a molten state. The circuit forming surface, the surface opposite to the circuit forming surface, and the side surface of the circuit forming surface can be covered with the semiconductor sealing resin composition 40 in a molten state. Thereafter, the resin composition for forming an organic resin film is cured over a predetermined time. By doing so, it is possible to fill the gap formed between the adjacent semiconductor chips 5 with the semiconductor sealing resin composition 40 satisfactorily without leaving an unfilled portion.
In the case where higher precision flatness is required for the resin composition 40 for semiconductor encapsulation, after the press with the diaphragm type laminator, a press step using a flat press apparatus adjusted with high precision is added. Can also be molded.

  When the semiconductor chip 5 is sealed, transfer molding may be performed by the following method using the semiconductor sealing resin composition 40 processed into a tablet shape.

  First, a molding die on which the semiconductor chip 5 is installed is prepared. The molding die prepared here is composed of a pot for charging the tablet-shaped resin composition 40 for semiconductor encapsulation, and an auxiliary ram inserted into the pot for applying pressure to melt the resin composition 40 for semiconductor encapsulation. And a sprue for feeding the melted semiconductor encapsulating resin composition 40 into the molding space.

Next, with the molding die closed, the tablet-shaped resin composition 40 for semiconductor encapsulation is charged into the pot. Here, the form of the semiconductor sealing resin composition 40 charged in the pot may be in a semi-molten state by being preheated by a preheater or the like in advance. Next, in order to melt the semiconductor sealing resin composition 40 charged in the pot, a pressure is applied to the semiconductor sealing resin composition 40 by inserting a plunger provided with an auxiliary ram into the pot. . Thereafter, the melted semiconductor encapsulation resin composition 40 is introduced into the molding space via a sprue. Next, the resin composition 40 for semiconductor encapsulation filled in the molding space is cured by heating and pressing. After the semiconductor encapsulating resin composition 40 is cured, the gap formed between the adjacent semiconductor chips 5 can be filled with the molten semiconductor encapsulating resin composition 40 by opening the molding die. Thus, the semiconductor chip 5 in which the circuit forming surface of the semiconductor chip 5, the surface opposite to the circuit forming surface, and the side surface of the circuit forming surface are covered with the semiconductor sealing resin composition 40 can be formed.
Hereinafter, examples of the embodiment will be additionally described.
1. A semiconductor chip, solder bumps provided on a circuit forming surface of the semiconductor chip, and a surface of the semiconductor chip opposite to the circuit forming surface and a side surface of the circuit forming surface; A sealing material covering the forming surface;
With
A semiconductor device in which a part of the solder bump is exposed.
2. The thickness of the sealing material covering the circuit formation surface of the semiconductor chip is １ ／ R or more and ＲR or less, where R is the average height of the solder bumps. 3. The semiconductor device according to claim 1.
3. The thickness of the sealing material covering the circuit formation surface of the semiconductor chip is 10 μm or more and 200 μm or less. Or 2. 3. The semiconductor device according to claim 1.
4. An adhesive member, comprising a plurality of semiconductor chips attached to the adhesive surface of the adhesive member, the plurality of semiconductor chips are disposed at a predetermined gap from each other, and a plurality of semiconductor chips with respect to the adhesive surface of the adhesive member A step of preparing a structure to which a part of solder bumps provided on a circuit forming surface of the semiconductor chip is attached and the circuit forming surface is exposed;
A semiconductor sealing resin composition in a flowing state is brought into contact with a plurality of the semiconductor chips to fill the gap with the semiconductor sealing resin composition, and the circuit forming surface of the semiconductor chip and the circuit A step of covering and sealing the surface and the side surface opposite to the forming surface with the semiconductor sealing resin composition,
Curing the resin composition for semiconductor encapsulation,
A method for manufacturing a semiconductor device, comprising:
5. 3. the adhesive member is a member having on its surface an ultraviolet-cured layer formed of an ultraviolet-curable resin; 13. The method for manufacturing a semiconductor device according to item 5.
6. 4. the structure is such that a part of the solder bump is embedded in the ultraviolet cured layer; 13. The method for manufacturing a semiconductor device according to item 5.
7. 3. The method further includes a step of cutting the cured body of the resin composition for semiconductor encapsulation filled in the gap and separating the cured product into a plurality of semiconductor chips sealed with the resin composition for semiconductor encapsulation. To 6. The method for manufacturing a semiconductor device according to any one of the above.

DESCRIPTION OF SYMBOLS 1 Semiconductor wafer 2 Solder bump 5 Semiconductor chip 7 Structure 8 Semiconductor device 10 Protective film (adhesive member)
20 Dicing film 30 Transfer member (adhesive member)
40 Resin composition for semiconductor encapsulation (encapsulant, cured product)
Reference Signs List 50 Release film 100 Frame 110 Central part 120 Peripheral part 130 Heating part 140 Extension base 200 Support base 210 UV curable layer 250 Support base 260 UV curable layer

Claims (4)

A semiconductor chip, solder bumps provided on a circuit forming surface of the semiconductor chip, and a surface of the semiconductor chip opposite to the circuit forming surface and a side surface of the circuit forming surface; A sealing material covering the formation surface, wherein a part of the solder bump is exposed, and the thickness of the sealing material covering the circuit formation surface of the semiconductor chip is an average height of the solder bump. R is a method for manufacturing a semiconductor device that is not less than (以上) R and not more than (３) R ,
An adhesive member, comprising a plurality of semiconductor chips attached to the adhesive surface of the adhesive member, the plurality of semiconductor chips are arranged at a predetermined gap from each other, and provided on the circuit forming surface of the semiconductor chip Preparing a structure in which a part of the solder bump is embedded in the adhesive member, the solder bump is attached to the adhesive surface of the adhesive member, and the circuit formation surface is exposed. When,
A semiconductor sealing resin composition in a flowing state is brought into contact with a plurality of the semiconductor chips to fill the gap with the semiconductor sealing resin composition, and the circuit forming surface of the semiconductor chip and the circuit A step of covering and sealing the surface and the side surface opposite to the forming surface with the semiconductor sealing resin composition,
Curing the resin composition for semiconductor encapsulation,
A method for manufacturing a semiconductor device, comprising:   The method for manufacturing a semiconductor device according to claim 1, wherein the adhesive member is a member having an ultraviolet curing layer formed of an ultraviolet curing resin on a surface. Cutting the cured body of the semiconductor sealing resin composition filled in the gap, and singulating into a plurality of semiconductor chips sealed by the semiconductor sealing resin composition,
The method for manufacturing a semiconductor device according to claim 1, further comprising: The thickness of the encapsulant is 10μm or more 200μm or less, a method of manufacturing a semiconductor device according to any one of claims 1 to 3 which covers the circuit forming surface of the semiconductor chip.

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