CN106449529A - Semiconductor device and method for manufacturing semiconductor device - Google Patents

Semiconductor device and method for manufacturing semiconductor device Download PDF

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Publication number
CN106449529A
CN106449529A CN201610663079.5A CN201610663079A CN106449529A CN 106449529 A CN106449529 A CN 106449529A CN 201610663079 A CN201610663079 A CN 201610663079A CN 106449529 A CN106449529 A CN 106449529A
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CN
China
Prior art keywords
semiconductor
resin
circuit
semiconductor chip
encapsulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201610663079.5A
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Chinese (zh)
Inventor
光田昌也
渡部格
森弘就
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Sumitomo Bakelite Co Ltd
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Sumitomo Bakelite Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2015-159388 priority Critical
Priority to JP2015159388A priority patent/JP6634729B2/en
Application filed by Sumitomo Bakelite Co Ltd filed Critical Sumitomo Bakelite Co Ltd
Publication of CN106449529A publication Critical patent/CN106449529A/en
Pending legal-status Critical Current

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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/12Mountings, e.g. non-detachable insulating substrates
    • H01L23/13Mountings, e.g. non-detachable insulating substrates characterised by the shape
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • H01L24/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52Mounting semiconductor bodies in containers
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/563Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/565Moulds
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93Batch processes
    • H01L2224/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Abstract

The semiconductor device of the invention includes: a semiconductor chip (5); a solder bump (2), which is provided on a circuit forming surface of the semiconductor chip (5); and a sealing material (40), which covers a surface opposite to the circuit forming surface, a side surface of the circuit forming surface and the circuit forming surface of the semiconductor chip (5), and a portion of the solder bumps (2) is exposed.

Description

Semiconductor device and the manufacture method of semiconductor device
Technical field
The present invention relates to the manufacture method of semiconductor device and semiconductor device.
Background technology
In the manufacturing process of existing representational semiconductor device, semiconductor wafer is formed face opposition side with circuit Face silicon substrate carry out thin layer after, semiconductor wafer singualtion makes multiple semiconductor chips.The semiconductor core obtaining Piece utilizes chuck to pick up, and carries out resin seal (patent document 1 etc.) respectively.
In the manufacturing process of such representational semiconductor device, from the viewpoint of improving yield rate, in order to prevent The breakage of semiconductor chip during manufacture, has carried out various researchs so far.
For example, patent document 2 discloses that following technology, i.e. in order to prevent producing when by semiconductor wafer singualtion Semiconductor wafer broken fall (rupture), after the back side wall-attached surface protection bonding sheet of semiconductor wafer, by semiconductor die Piece singualtion.
Prior art literature
Patent document
Patent document 1:Japanese Unexamined Patent Publication 9-107046 publication
Patent document 2:Japanese Unexamined Patent Publication 2011-210927 publication
Content of the invention
Invent problem to be solved
In above-mentioned technology, apply when preventing semiconductor wafer singualtion impacts the broken of caused semiconductor wafer Fall the aspect of (rupture), can expect effect to a certain degree.In addition, in above-mentioned technology, preventing the secondary of semiconductor chip The caused semiconductor chip of the impact that applies during installation broken fall (rupture) aspect it is also possible to expectation effect to a certain degree Really.But, present inventors have recognized that, even if in the case of using pressure-sensitive adhesive sheet for surface protection as described above nor complete Entirely prevent semiconductor wafer broken fall.The present inventor to broken fall the reason studied intensively, it was found that due to using folder The impact applying during first-class operation device absorption pickup semiconductor chip, makes semiconductor chip damaged sometimes.
Confirm semiconductor chip to break due to the impact applying during using the absorption pickup of the operation devices such as above-mentioned chuck The problem damaged, becoming apparent from the technique using thin layer semiconductor wafer particularly in recent years.In recent years, to carrying half The miniaturization of the electronic equipment of conductor device and lightweight etc. require constantly to increase.In order to meet such requirement, in recent years The manufacturing process of semiconductor device in, when grinding semiconductor chip and circuit form the face of face opposition side, exist for example By tendency thin layer for semiconductor wafer in the way of becoming 100 μm about of thickness.So that semiconductor wafer is thin layer In the case of, such as above-mentioned, semiconductor chip problem of breakage due to the impact that applies when being picked up using operation devices such as chucks Significantly.
In addition, in the manufacturing process of existing semiconductor device, sealing each semiconductor chip respectively, therefore in productivity ratio side Face also has room for improvement.
In view of more than, the problem of the present invention is, provides a kind of semiconductor device being improved in terms of reliability, And a kind of reliability and the manufacture method of the excellent semiconductor device of productivity ratio are provided.
For solving the scheme of problem
According to the present invention, provide a kind of semiconductor device, it has:
Semiconductor chip;
Solder bump, it forms face located at the circuit of described semiconductor chip;
Encapsulant, it covers the face with described circuit formation face opposition side of described semiconductor chip, described circuit shape The side in one-tenth face and described circuit form face,
A part for described solder bump is exposed.
The semiconductor device of the present invention covers semiconductor chip in the firming body using resin composition for encapsulating semiconductor Form the face of face opposition side and its side with circuit and circuit forms in the state of face protected, using chuck pickup, Therefore, it is possible to prevent the breakage of semiconductor chip producing in existing semiconductor device, being caused by chuck.Therefore, with Existing semiconductor device is compared, the semiconductor device of the present invention of excellent in reliability.Additionally, the semiconductor device profit of the present invention Form face, the face of opposition side and side with the circuit that the firming body of resin composition for encapsulating semiconductor covers semiconductor chip, Therefore, compared with existing semiconductor device, resistance to broken fall property excellent.
The semiconductor device of the present invention has the structure that a part for solder bump is exposed.Therefore, this semiconductor is being filled Put when being equipped on substrate, be capable of encapsulant and do not contact and both separate structures with substrate.Thereby, it is possible to solve existing The closely sealed bad problem at interface that produce in some semiconductor devices, substrate and encapsulant.Therefore, partly lead with existing Body device is compared, and can become excellent semiconductor device in terms of reliability.In addition, compared with existing semiconductor device, The semiconductor device of the present invention can also minimize.In addition, the semiconductor device of the present invention can also be straight not via plug-in part Connect and be installed on motherboard.
In addition, in the semiconductor device of the present invention, the part due to solder bump is exposed, therefore, operational excellent, energy It is enough in various techniques.Specifically, can be installed on motherboard, plug-in part and lead frame etc. various for the semiconductor device of the present invention Substrate.
According to the present invention, also provide a kind of manufacture method of semiconductor device, it includes:
Prepare the operation of structure, this structure possesses bonding part and is attached at the many of the adhesive surface of described bonding part Individual semiconductor chip, multiple described semiconductor chips configure with being spaced from each other predetermined distance, and located at multiple described semiconductor cores A part for the solder bump in circuit formation face of piece is attached to the adhesive surface of described bonding part, and described circuit forms and shows Go out;
The resin composition for encapsulating semiconductor of flow regime is made to contact with multiple described semiconductor chips, to multiple described Described resin composition for encapsulating semiconductor is filled in gap between semiconductor chip, and utilizes described encapsulating semiconductor tree The described circuit that oil/fat composition covers described semiconductor chip forms face and described circuit forms the face of face opposition side and side Operation;
Make the operation of described resin composition for encapsulating semiconductor solidification.
Manufacturing method according to the invention, can obtain covering in the firming body using resin composition for encapsulating semiconductor The circuit in the face and its side and this semiconductor chip that form face opposition side with circuit of semiconductor chip forms face and is protected In the state of shield, can be using the semiconductor device of chuck pickup.Thus, obtained using the absorption pickup of the operation devices such as chuck Semiconductor device when, operation device will not with semiconductor chip directly contact, therefore, operation device contact when, can relax The impact that semiconductor chip is applied.Therefore, manufacturing method according to the invention, can prevent the broken of semiconductor chip in advance Damage, semiconductor device of excellent in reliability can be obtained.In addition, manufacturing method according to the invention, can be multiple by obtain Semiconductor chip carries out resin seal together, it is thus possible to improve production efficiency.
Invention effect
In accordance with the invention it is possible to provide the semiconductor device being improved in terms of reliability, and provide reliability The manufacture method of the semiconductor device excellent with productivity ratio.
Brief description
Above-mentioned purpose and other objects, features and advantages are passed through described below preferred embodiment and its incidental The following drawings becomes definitely.
Fig. 1 is the sectional view of of the semiconductor device representing present embodiment.
Fig. 2 is the figure of of the manufacture method of the semiconductor device for present embodiment is described.
Fig. 3 is the figure of of the manufacture method of the semiconductor device for present embodiment is described.
Fig. 4 is the figure of of the manufacture method of the semiconductor device for present embodiment is described.
Fig. 5 be present embodiment manufacture method in by the interval being attached between multiple semiconductor chips of cutting film expansion When spendable device configuration example.
Fig. 6 be present embodiment manufacture method in by the interval being attached between multiple semiconductor chips of cutting film expansion When spendable device configuration example.
Fig. 7 is the figure of of the manufacture method of the semiconductor device for present embodiment is described.
Specific embodiment
Hereinafter, using accompanying drawing, embodiments of the present invention are illustrated.Additionally, in whole accompanying drawings, constituting to identical Key element mark identical symbol simultaneously suitably omits the description.
< first embodiment >
Fig. 1 is the sectional view of of the semiconductor device 8 representing present embodiment.
As shown in figure 1, the semiconductor device 8 of present embodiment has:Semiconductor chip 5;Electricity located at semiconductor chip 5 The solder bump 2 in road formation face (below);Cover the face (top surface), the circuit that form face opposition side with circuit of semiconductor chip 5 The circuit of the side in formation face and semiconductor chip 5 forms the encapsulant 40 in face, and a part for solder bump 2 is exposed.This Sample, in the semiconductor device 8 of present embodiment, the circuit of semiconductor chip 5 forms face and forms the contrary face in face and side with circuit Face is covered by encapsulant 40.By possessing this structure, when manufacturing semiconductor device 8, partly lead even with chuck pickup Body chip 5 is it is also possible to prevent this semiconductor chip 5 damaged in advance.Therefore, compared with existing semiconductor device, by this reality Apply the of excellent in reliability of the semiconductor device 8 that the manufacturing process of mode obtains.
According to the semiconductor device 8 of present embodiment, a part for solder bump 2 is exposed.By possessing this structure, When this semiconductor device 8 is installed on substrate, it is capable of encapsulant 40 and does not contact and both separate structures with substrate.Its As a result, compared with the existing semiconductor device engaging with substrate and encapsulant, using the teaching of the invention it is possible to provide the semiconductor device 8 of miniaturization. In addition, semiconductor device 8 can also be directly mounted at motherboard not via plug-in part.And then, semiconductor device 8 is capable of close Closure material 40 does not contact and both separate structures with substrate, therefore, will not produce the base producing in existing semiconductor device The closely sealed bad problem at the interface of plate and encapsulant.Therefore, compared with existing semiconductor device, it is capable of in reliability The property excellent semiconductor device of aspect 8.Additionally, semiconductor device 8 possesses consolidating using resin composition for encapsulating semiconductor 40 The circuit changing body covering semiconductor chip 5 forms the structure of the state that face, the face of opposition side and side are protected, therefore, with Existing semiconductor device is compared, resistance to broken fall property in terms of also excellent.
In addition, in the semiconductor device 8 of present embodiment, a part for solder bump 2 is exposed, therefore, operability is excellent, Can be used for various techniques.Specifically, the semiconductor device 8 of present embodiment can be installed on motherboard, plug-in part and lead The various substrate such as frame.
In the semiconductor device 8 of present embodiment, just cover the encapsulant 40 in circuit formation face of semiconductor chip 5 For thickness, when the average height of solder bump 2 is set to R, preferably (1/4) more than R (3/4) below R, more preferably (3/8) more than R (5/8) below R.Specifically, the thickness of the encapsulant 40 that the circuit covering semiconductor chip 5 forms face is excellent Elect less than more than 10 μm 200 μm as, more preferably less than more than 20 μm 180 μm.By so, manufacturing semiconductor device When 8, can obtain can preventing semiconductor chip 5 in advance due to picking up during this semiconductor chip 5 to this semiconductor using chuck Chip 5 apply impact and damaged and excellent in terms of electrical connectivity and reliability semiconductor device 8.
Here, the semiconductor device 8 of Fig. 1 utilizes the circuit that encapsulant 40 covers semiconductor chip 5 to form face, opposition side Face and side, and a part for solder bump 2 exposes.The semiconductor device 8 of Fig. 1 is capable of close when being installed on substrate Closure material 40 does not contact and both separate structures with substrate.
Then, the manufacture method of semiconductor device 8 is illustrated.
The manufacture method of the semiconductor device 8 of present embodiment includes:Prepare to possess bonding part 10 or 30 and to specify Interval be attached at bonding part 10 or 30 the structure 7 of multiple semiconductor chips 5 of adhesive surface operation, wherein, partly lead Body chip 10 forms face in circuit and possesses solder bump 2, and semiconductor chip 5 is in the way of foregoing circuit forms and shows out by solder A part for salient point 2 is attached at the adhesive surface of bonding part 10 or 30;Make to be in the semiconductor sealing resin group of flow regime Compound 40 is contacted with multiple semiconductor chips 5, to the gap filling semiconductor sealing resin group between adjacent semiconductor chip 5 Compound 40, and form face and foregoing circuit using the circuit that resin composition for encapsulating semiconductor 40 covers semiconductor chip 5 The operation that the face of formation face opposition side and side are sealed;Make the operation that resin composition for encapsulating semiconductor 40 solidifies.Logical Cross as such, it is possible to obtain covering the circuit shape of semiconductor chip 5 in the firming body 40 using resin composition for encapsulating semiconductor In the state of one-tenth face, the face of opposition side and side are protected, the semiconductor device 8 that can be picked up using chuck.Thus, The operation device directly contact semiconductor chip 5 when being picked up can be prevented using operation devices such as chucks, or using partly The firming body 40 of conductor resin composition for encapsulating rushes to semiconductor chip 5 applying when relaxing the contact of the operation devices such as chuck Hit.Therefore, the manufacture method according to present embodiment, can prevent semiconductor chip 5 in advance due to operating dress using chuck etc. The impact that applies when putting pickup semiconductor chip 5 and damaged.Therefore, compared with existing manufacturing process, reliability can be obtained Excellent semiconductor device 8.
In addition, in the manufacture method of the semiconductor device 8 of present embodiment, the preferred bonding part of bonding part 10 or 30 It is the part that surface has the ultraviolet curing layer 210 being formed by ultraviolet curable resin.In addition, in bonding part 10 or 30 being In the case that surface has the above-mentioned part of ultraviolet curing layer 210, a part for solder bump 2 is preferably buried by structure 7 Located at ultraviolet curing layer 210.
In addition, according to the manufacture method of present embodiment, can be multiple obtained from substrate by not being configured at after singualtion Semiconductor chip 5 carries out resin seal together, therefore, it is possible to improve the productivity ratio of semiconductor device 8.It should be noted that half Conductor chip 1 is the part of the wiring layer being formed with single or multiple lift on a silicon substrate.Hereinafter, by semiconductor wafer 1 The face referred to as circuit formation face being formed with the side of wiring layer illustrates.
Here, bonding part 10 or 30 can be adhesive tape monomer or be formed with adhesive layer in supporting base material Laminated sheet.Hereinafter, citing bonding part 30 (below, also is indicated as transfer member 30.) be formed with supporting base material 200 by The situation of the ultraviolet curing layer 210 that ultraviolet curable resin is formed, the manufacture method with reference to Fig. 2~4 pair present embodiment is entered Row explanation.It should be noted that cutting film 20 used in each operation of the manufacture method of present embodiment, transfer member 30, Bonding part 10 (below, also is indicated as diaphragm 10.) and the details of mold release film 50 as described later.
The manufacture method of the present embodiment shown in Fig. 2~4 includes:Form face in semiconductor wafer 1 and circuit contrary In the state of cutting film 20 is pasted with the face of side, by semiconductor wafer 1 singualtion, obtain being attached at the state of cutting film 20 The operation of multiple semiconductor chips 5;The region being pasted with multiple semiconductor chips 5 in cutting film 20 is made to expand in direction along along face , and make the operation of the interval expansion between adjacent semiconductor chip 5;With the solder bump 2 of semiconductor chip and transfer member The mode of the surface contact of the ultraviolet curing layer 210 in 30 attaches the operation of transfer member 30;By multiple semiconductor chips 5 The operation of cutting film 20 in the state of being attached at transfer member 30, is peeled off from semiconductor chip 5;Make to be in partly leading of flow regime Body resin composition for encapsulating 40 is crimped on the face forming face opposition side with circuit of multiple semiconductor chips 5, to adjacent half Gap filling semiconductor resin composition for encapsulating 40 between conductor chip 5, and utilize resin composition for encapsulating semiconductor The circuit of 40 covering semiconductor chips 5 forms the operation that face, the face of opposition side and side are sealed;Make encapsulating semiconductor tree The operation of oil/fat composition 40 solidification.But, the operation that the above-mentioned interval making between adjacent semiconductor chip 5 is expanded, the such as the 3rd Aftermentioned in embodiment, it is not necessarily required to implement.
Specifically, first, as shown in Fig. 2 (a), prepare, in circuit formation face, partly leading of multiple solder bump 2 is installed Body chip 1.
Then, as shown in Fig. 2 (b), the circuit in order to protect the semiconductor wafer 1 of preparation forms face, and this circuit is formed Face attaches diaphragm 10, covers this circuit using diaphragm 10 and forms face.By so, in grinding semiconductor chip 1 described later Form face opposition side with circuit face when, be prevented from being equipped on this circuit and form the electronic component in face etc. due to circuit shape One-tenth face apply impact and damaged.
Then, as shown in Fig. 2 (c), that grinds the semiconductor wafer 1 being pasted with diaphragm 10 forms face opposition side with circuit Face.Specifically, the semiconductor wafer 1 being pasted with the state of diaphragm 10 is fixed on lapping device, grinds and circuit The face of formation face opposition side, makes the thickness of this semiconductor wafer 1 become the thickness of regulation.
In addition, in the manufacture method of present embodiment, such as above-mentioned, grinding semiconductor in the state of being pasted with diaphragm 10 The face being formed face opposition side with circuit of chip 1, is formed therefore, it is possible to be effectively prevented the circuit being equipped on semiconductor wafer 1 The electronic component in face etc. is damaged due to the stress producing when grinding.
Then, as shown in Fig. 2 (d), the face forming face opposition side with circuit of semiconductor wafer 1 obtained from grinding On, diaphragm 10 is attached at the state attaching cutting film 20 that circuit forms face.Then, as shown in Fig. 2 (e), from semiconductor Chip 1 peels off diaphragm 10.Now, preferably diaphragm 10 is reducing the adaptation between this diaphragm 10 and semiconductor wafer 1 Peel off from semiconductor wafer 1 afterwards.Specifically, following method can be enumerated, i.e. by diaphragm 10 and semiconductor wafer 1 Bonding site carry out for example ultraviolet irradiate, heat treatment, make this bonding site of formation diaphragm 10 adhesive layer deterioration, by This, reduce adaptation.
The semiconductor die of the state of cutting film 20 will be pasted with the face forming face opposition side with circuit shown in Fig. 2 (e) Piece 1 carries out singualtion using cutting blade, laser etc., thus, makes the state being pasted with cutting film 20 shown in Fig. 3 (a) Multiple semiconductor chips 5.It should be noted that the singualtion of above-mentioned semiconductor wafer 1 can use cutting blade, laser Deng.In addition, when by semiconductor wafer 1 singualtion, needing not cut off cutting film 20, can keep being pasted with obtain multiple The state of semiconductor chip 5.
Then, as shown in Fig. 3 (b), make cutting film 20 direction expansion along along the face of semiconductor chip 5, make adjacent partly leading Interval between body chip 5 expands into the size of regulation.Now, being preferably spaced at equal intervals between adjacent semiconductor chip 5.Tool For body, for the interval between adjacent semiconductor chip 5 in rectangular-shaped semiconductor chip 5, by with semiconductor chip 5 Parallel direction is set to first direction on one side, the direction orthogonal with above-mentioned first direction is set to during second direction it is also possible to only Expand in the first direction at equal intervals it is also possible to only expand at equal intervals in a second direction, but preferably in the first direction with the second The both direction in direction expands at equal intervals.Therefore, when expanding the interval between adjacent semiconductor chip 5, preferably along cutting In film 20 face, the interval between above-mentioned adjacent semiconductor chip 5 is isotropically expanded in direction.Here, the manufacture of present embodiment Method is for example above-mentioned, and the circuit along semiconductor chip 5 forms expansion cutting film 20 in direction in the face in face.Therefore, cutting film 20 is preferred For the structure that extensibility is excellent.In addition, when making the interval between adjacent semiconductor chip 5 be expanded into given size, as long as making Expand cutting film 20 with known cutter sweep.It should be noted that carry out aftermentioned to the structure of cutting film 20.
Here, when expanding the interval between adjacent semiconductor chip 5, it is possible to use for example following device.
Fig. 5 and 6 is the configuration example of the spendable device when making the interval between adjacent semiconductor chip 5 expand.Fig. 5 is Represent the figure of the state before the interval expansion making between adjacent semiconductor chip 5, (a) is side sectional view, and (b) is top view. Fig. 6 is the figure of the state after representing the interval expansion making between adjacent semiconductor chip 5, and (a) is side sectional view, and (b) is to bow View.
Fig. 5 and 6 device have:Clamp and be attached at the cutting film 20 of multiple semiconductor chips 5 obtained from singualtion The framework 100 of the ring-type of surrounding;It is configured at the lower section of the cutting film 20 of framework 100 inner side, make cutting film by being moved upward The expansion platform 140 of 20 expansions;Located at expansion platform 140, and heat the heating part 130 of this expansion platform 140, expansion platform 140 is divided into Its central portion 110 and its periphery 120, the contact with cutting film 20 of the central portion 110 located at expansion platform 140 for the heating part 130 The different face in face.
In addition, expanding in the region of multiple semiconductor chips 5 of state that the configuration on platform 140 is pasted with cutting film 20, Preferable temperature is uniform.By as such, it is possible in the face of this cutting film 20 direction equably control the dilatancy of cutting film 20.
In addition, Fig. 5 and 6 device by using heating part 130 heat expansion platform 140, it is possible to increase the expansion of cutting film 20 Extensional.
So, Fig. 5 and 6 device can heat the expansion central portion 110 of platform 140 and periphery 120, while making expansion Open platform 140 to be moved upward.Thus, it is possible in the face equably improving cutting film 20 direction expansionary on the basis of, make Expansion platform 140 is moved upward.Therefore, as shown in fig. 6, can with adjacent semiconductor chip 5 between interval become at equal intervals Mode, so that cutting film 20 is equably expanded.
Then, as shown in Fig. 3 (c), in the state of being pasted with cutting film 20, whole throughout multiple semiconductor chips 5 Circuit forms face and attaches transfer member 30.Now, transfer member 30 is with the table of the ultraviolet curing layer 210 in this transfer member 30 Face does not form, with the circuit in semiconductor chip 5, the mode that face contacts, and only covers the part on solder bump 2 surface and is pasted Attached.Specifically, when attaching transfer member 30 to semiconductor chip 5, the circuit of above-mentioned semiconductor chip 5 formed face with above-mentioned The distance between surface of ultraviolet curing layer 210 in transfer member 30 is preferably controlled to less than more than 10 μm 200 μm, enters one Step is preferably controlled to less than more than 20 μm 180 μm.In addition, with regard to the above-mentioned work attaching transfer member 30 to semiconductor chip 5 Sequence, in the case of from the viewpoint of the embedded state located at the solder bump 2 in the circuit formation face of semiconductor chip 5, will When the average height of this solder bump 2 is set to R, preferably solder bump 2 is formed, away from circuit, the position opposition side that face contacts Leading section be embedded in the ultraviolet curing layer 210 in transfer member 30 for (1/4) more than R (3/4) R area below, enter One step preferably (3/8) more than R (5/8) R area below is embedded in the ultraviolet curing layer 210 in transfer member 30.This In the manufacture method of embodiment, by controlling the attaching degree of transfer member 30, can be in use encapsulating semiconductor described later Region sealed by resin is adjusted in operation with resin combination 40 sealing.
Then, as shown in Fig. 3 (d), peel off cutting film 20 from semiconductor chip 5.So, in the shape being pasted with cutting film 20 Attach transfer member 30 under state, then, peel off this cutting film 20, thus, it is possible to not make the separation fluctuation between each semiconductor chip 5 Transfer member 30 is attached at semiconductor chip 5 by ground.It should be noted that preferred cutting film 20 is reducing this cutting film 20 and half Peel off from this semiconductor chip 5 after adaptation between conductor chip 5.Specifically, following method can be enumerated, i.e. pass through Such as ultraviolet irradiation, heat treatment are carried out to the bonding site of cutting film 20 and semiconductor chip 5, makes this bonding site of formation The adhesive layer deterioration of cutting film 20, thus, reduces adaptation.
In addition, transfer member 30 is not particularly limited, for example, preferably has both and can bear in order that semiconductor described later is close The heat resistance of the degree of heat and fixing semiconductor core on this transfer member 30 that envelope resin combination 40 solidifies and applies Piece 5 without departing from degree cohesive structure.Transfer member 30 can be cohesive band monomer or by cohesive Band is attached at the plate-shaped member being formed by metal or plastics etc. and gives rigid part.It should be noted that present embodiment In, attach, using the plate-shaped member in the metal being made up of 42 alloys, the cohesive band comprising ultraviolet curing layer 210 and obtain Part.
Then, as shown in Fig. 3 (e), prepare to be coated with the semiconductor sealing resin group being in flow regime by melting The mold release film 50 of compound 40.And, such as shown in Fig. 3 (f), the resin composition for encapsulating semiconductor 40 being in flow regime is pressed It is connected to the face forming face opposition side with circuit of multiple semiconductor chips 5, to the gap filling half between adjacent semiconductor chip 5 Conductor resin composition for encapsulating 40, and the circuit of semiconductor chip 5 is covered using resin composition for encapsulating semiconductor 40 Formation face, the face of its opposition side and side are sealed.That is, filled out using the resin composition for encapsulating semiconductor 40 of flow regime Bury the gap being formed between adjacent semiconductor chip 5, and in the way of a part for solder bump 2 is exposed, using partly leading The circuit of body resin composition for encapsulating 40 sealing semiconductor chips 5 forms face and circuit forms face and the circuit of face opposition side The side in formation face.By so, in the semiconductor chip 5 being made using chuck pickup, it is possible to use encapsulating semiconductor is used The firming body 40 of resin combination protects the position adsorbed by this chuck.Thus, it is possible to using semiconductor sealing resin group In the state of the circuit formation face of the firming body covering semiconductor chip 5 of compound 40, the face of its opposition side and side are protected, The semiconductor chip 5 being obtained using the pickup of the operation devices such as chuck.Therefore, the manufacture method according to present embodiment, can be pre- First prevent this semiconductor chip 5 due to the impact that applies and breakage when picking up semiconductor chip 5 using operation devices such as chucks Possibility.
Here, the resin composition for encapsulating semiconductor 40 being in flow regime can be in the heat cure of molten condition The resin combination of property resin combination or liquid or be configured to membranaceous resin combination and be in softening State composition.
Hereinafter, for the operation of sealing semiconductor chips 5, citing describes the particulate resins composition using solid in detail Situation as resin composition for encapsulating semiconductor 40.
Method using resin composition for encapsulating semiconductor 40 sealing semiconductor chips 5 is not particularly limited, Ke Yiju Go out transfer moudling, compression forming method, injection molding method etc., but be preferably not likely to produce the position of fixing semiconductor chip 5 The compression forming method of skew.In addition, in the case of being compressed form seal semiconductor chip 5, it is possible to use granular Resin combination carry out resin seal.In addition, carry out aftermentioned to the details of resin composition for encapsulating semiconductor 40.
Specifically, between the upper die and lower die of compression molding die, setting contains the tree of particulate resins composition Fat material supply container.Then, the semiconductor chip 5 of transfer member 30 will be pasted with, using fixation side as clamping, adsorbing Method is fixed on a side of the upper die and lower die of compression mold.Hereinafter, illustrate semiconductor chip 5 to be formed with circuit The face of face opposition side and the aspectant mode of resin material supply container are fixed on the situation of the upper mould of compression mold.
Then, reduce the interval of the upper die and lower die of mould under reduced pressure, while supplying using constituting resin material The resin material feed mechanism such as gate of the bottom surface of container, by the particulate resins weighed composition supply to lower mould standby under Die cavity is indoor.Need in advance mold release film 50 to be statically placed in this mold.Thus, particulate resins composition is in lower mode cavity room Inside it is heated to form set point of temperature, as a result, the semiconductor sealing resin combination of molten condition can be prepared on mold release film 50 Thing 40.Then, combined by making the upper die and lower die of mould, make the resin composition for encapsulating semiconductor 40 of molten condition and consolidate Semiconductor chip 5 due to upper mould abuts.By as such, it is possible to utilize the resin composition for encapsulating semiconductor 40 of molten condition Landfill is formed at the gap between adjacent semiconductor chip 5, and can be covered using resin composition for encapsulating semiconductor 40 The circuit of semiconductor chip 5 forms face and circuit forms the face of face opposition side and circuit forms the side in face.Then, protect Hold the state making the upper die and lower die of mould combine, so that resin composition for encapsulating semiconductor 40 is solidified.
Here, in the case of being compressed shaping, preferably reducing pressure in mould, while it is close to carry out resin Envelope, further preferably under vacuum.By not filling out as such, it is possible to make resin composition for encapsulating semiconductor 40 will not remain Fill and be partly filled in the gap formed between adjacent semiconductor chip 5 well.
The forming temperature of compression molding is not particularly limited, but preferably 50~200 DEG C, particularly preferably 80~180 DEG C. In addition, forming pressure is not particularly limited, but preferably 0.5~12MPa, particularly preferably 1~10MPa.Curring time enters one Step preferably 30 seconds~15 minutes, particularly preferably 1~10 minute.By forming temperature, pressure, time are set to above-mentioned model Enclose, can prevent to be not filled by the part of resin composition for encapsulating semiconductor 40 of molten condition and semiconductor chip 5 Put such two kinds of situations of skew.
Then, as shown in Fig. 4 (a), peel off mold release film 50.
Then, as shown in Fig. 4 (b), such as, in the state of transfer member 30 is attached at semiconductor chip 5, will fill In the firming body cut-out of the resin composition for encapsulating semiconductor 40 in gap, monolithic is melted into by resin composition for encapsulating semiconductor Multiple semiconductor chips 5 of 40 sealings.Now, transfer member 30 can also be with the solidification of resin composition for encapsulating semiconductor 40 Body is cut off together it is also possible to not cutting off and keeping throughout the state being pasted to multiple semiconductor chips 5, but from raising semiconductor From the viewpoint of the productivity ratio of device 8, when by semiconductor chip 5 singualtion, preferably transfer member 30 is not cut off, Neng Goubao Hold throughout the state being pasted to semiconductor chip 5.It should be noted that the singualtion of above-mentioned semiconductor chip 5 can use Cutting blade, laser etc..
Then, as shown in Fig. 4 (c), peel off transfer member 30 from semiconductor device 8.Accordingly, present embodiment can be made Semiconductor device 8.It should be noted that preferred transfer member 30 is reducing between this transfer member 30 and semiconductor device 8 Adaptation after peel off from this semiconductor chip 5.Specifically, following method can be enumerated, i.e. by transfer member 30 He The bonding site of semiconductor chip 5 carries out such as ultraviolet and irradiates, is heat-treated, and makes the transfer member 30 of this bonding site of formation Adhesive layer deteriorates, and thus, reduces adaptation.
In addition, the semiconductor device 8 obtaining can also be installed on substrate as needed.It should be noted that will make When the semiconductor device made is installed on substrate, it is possible to use the known device such as flip-chip bond machine and small pieces jointing machine.
According to the manufacture method of present embodiment, can obtain in the firming body using resin composition for encapsulating semiconductor In the state of the circuit formation face of 40 covering semiconductor chips 5, the face of opposition side and side are protected, chuck etc. can be utilized The semiconductor chip 5 that operation device is picked up.Thus, it is possible to prevent the operation devices such as chuck from directly connecing with semiconductor chip 5 Touch, and can be relaxed when being picked up using operation devices such as chucks using the firming body 40 of resin composition for encapsulating semiconductor The impact that semiconductor chip 5 is applied.Therefore, the manufacture method according to present embodiment, can prevent semiconductor chip 5 in advance Due to the impact that applies when being picked up using operation devices such as chucks and the possibility of breakage.That is, the manufacture according to present embodiment Method, can relax impact when using the absorption pickup of the operation devices such as chuck, semiconductor chip 5 being applied.Therefore, according to The manufacture method of present embodiment, compared with existing manufacture method, can manufacture semiconductor device of excellent in reliability.Separately Outward, the manufacture method according to present embodiment, will can not be configured at multiple semiconductor chips 5 obtained from substrate after singualtion Carry out resin seal together.Therefore, compared with existing manufacture method, production efficiency can be significantly increased.In addition, will lead to Cross in the case that the semiconductor device 8 that the manufacture method of present embodiment obtains is installed on substrate, due to being encapsulant 40 He The separate structure of substrate, thus, it is also possible to suppression between encapsulant 40 and substrate produce closely sealed bad, can more enter one Step improves reliability.
In present embodiment, diaphragm 10 is in order to when grinding semiconductor chip 1 forms the face of face opposition side with circuit Protect the circuit of this semiconductor wafer 1 to form face and using but it is also possible to aftermentioned as the 3rd embodiment in, having in general In the function of cutting film 20 of using during semiconductor wafer 1 singualtion and present embodiment cover semiconductor chip 5 and circuit The function of the transfer member 30 that the face of formation face opposition side and side use when being sealed.Therefore, from the viewpoint of production efficiency From the point of view of, the manufacture method of the 3rd embodiment described later is excellent, but the manufacture method according to present embodiment, in each manufacturing process Due to using different bonding parts 10 and 30, also having to maintain intensity of this bonding part 10 and 30 etc. can separately make The advantages of use.That is, the manufacture method according to present embodiment, can accurately make semiconductor device of excellent in reliability.
< second embodiment >
Fig. 7 is the figure of of the manufacture method of the semiconductor device for present embodiment is described.
, as shown in fig. 7, preparing structure 7, this structure 7 possesses to have on surface and is formed for the manufacture method of present embodiment The diaphragm 10 of the ultraviolet curing layer 260 being formed in supporting base material 250 and by ultraviolet curable resin and be attached at this guarantor Multiple semiconductor chips 5 of the state on ultraviolet curing layer 260 surface of cuticula 10, and many maintaining diaphragm 10 to be attached at Sealing semiconductor chips 5 in the state of individual semiconductor chip 5, different from first embodiment in this respect.Specifically, will paste Semiconductor wafer 1 singualtion of the state with diaphragm 10, makes the state being pasted with diaphragm 10 shown in Fig. 7 (a) Multiple semiconductor chips 5.It should be noted that when by semiconductor wafer 1 singualtion, needing diaphragm 10 not to be cut off, energy Enough holdings are pasted with the state of the multiple semiconductor chips 5 obtaining.Then, as shown in Fig. 7 (b), make diaphragm 10 along semiconductor Direction expansion in the face of chip 5, the interval expansion between the semiconductor chip 5 that will abut against.Then, as shown in Fig. 7 (c) and (d), make The resin composition for encapsulating semiconductor 40 being in flow regime is contacted with the contrary with circuit formation face of multiple semiconductor chips 5 The face of side, to the gap filling semiconductor resin composition for encapsulating 40 between adjacent semiconductor chip 5, and utilizes semiconductor Circuit formation face, the face of its opposition side and side that resin composition for encapsulating 40 covers semiconductor chip 5 are sealed.Pass through In such manner, it is possible to obtain possessing semiconductor device 8 mutually isostructural with first embodiment.In addition, according to present embodiment, also can Access and first embodiment identical effect.Additionally, according to the manufacture method of present embodiment, semiconductor dress can be simplified Put 8 manufacturing process, therefore, compared with existing manufacture method, can further significantly increase production efficiency.
< the 3rd embodiment >
The manufacture method of present embodiment do not include being illustrated using Fig. 3 (a) and (b) in above-mentioned first embodiment, make The region direction expansion along along the face of film being pasted with multiple semiconductor chips 5 in cutting film 20, and make adjacent semiconductor core The operation of the interval expansion between piece 5 is different from first embodiment in this respect.Specifically, the manufacturer of present embodiment In method, in each semiconductor chip 5 being attached at using the detection of known semiconductor chip detection means in cutting film 20, many In the case of the interval of individual semiconductor chip 5 is irregular, carry out laser cutting, repair into this interval rule.That is, present embodiment Manufacture method be structure not via Fig. 3 (a), the method that semiconductor device 8 is made for starting point with Fig. 3 (b).Here, in order to Semiconductor wafer 1 by the state by cutting film 20 is pasted with shown in Fig. 2 (e) on the face forming face opposition side with circuit Singualtion, the gap between adjacent semiconductor chip 5 is not via the structure of Fig. 3 (a), and becomes the state of Fig. 3 (b), as long as adjusting The interval of the whole solder bump 2 being installed on semiconductor wafer 1.By as such, it is possible to obtain possessing and the first embodiment party The mutually isostructural semiconductor device of formula 8.
Then, to the resin composition for encapsulating semiconductor 40 of each embodiment, cutting film 20, transfer member 30, protection The structure of film 10 and mold release film 50 illustrates.
< resin composition for encapsulating semiconductor 40 >
Hereinafter, the mode being particulate resins composition to resin composition for encapsulating semiconductor 40 is carried out in detail Bright, but it is not limited to this.
For the particulate resins composition of present embodiment, as its constituent material, preferably comprise epoxy resin.Make For epoxy resin, for example, have in 1 intramolecular more than 2 the monomer of epoxy radicals, oligomer, polymer all, to its point Son amount and molecular structure are not particularly limited.Specifically, can enumerate:Biphenyl type epoxy resin, bisphenol A type epoxy resin, The Cristalline epoxy resin such as bisphenol f type epoxy resin, stilbene type epoxy resin, hydroquinone type epoxy resin;Cresol novolak type ring The phenolic resin varnish type epoxy resins such as oxygen tree fat, phenol novolak type epoxy resin, naphthol novolac type epoxy resin;Containing Asia The phenol aralkyl type epoxy resin of phenyl skeleton, containing biphenylene skeleton phenol aralkyl type epoxy resin, contain phenylene The phenol aralkyl-type epoxy resin such as naphthols aralkyl-type epoxy resin of skeleton;Tris-phenol type epoxy resin, alkyl-modified Tris-phenol type epoxy resin etc. 3 functional-type epoxy resin;Dicyclopentadiene-modified phenol type epoxy resin, terpene modified benzene The modified phenol type epoxy resin such as phenol-type epoxy resin;Epoxy resin containing triazine core etc. contains epoxy resin of heterocycle etc., these In material, it is possible to use a kind, or it is applied in combination two or more.
In addition, the method as obtaining particulate resins composition, it is not particularly limited, for example, can enumerate:To by having There is the resin combination of the inner side supply melting mixing of the cylindric peripheral part of multiple apertures and the rotor of discoid bottom surface composition Thing, by this resin combination by making centrifugal force obtained from rotor rotation, by method obtained from aperture (below, also referred to as For " being centrifuged powder method processed ".);Each material composition is utilized after mixer premixing, using kneading machines such as roller, kneader or extruders After carrying out heating mixing, make crushed material via cooling, pulverizing process, this crushed material is carried out coarse grain and micro mist using sieve Method obtained from removing is (hereinafter also referred to as " grinding screen point-score ".);Each material composition is utilized after mixer premixing, makes Be provided with screw front end portion configure multiple apertures die head extruder, carry out heating mixing, and will be from being configured at mould The molten resin of the aperture strand form extrusion of head is cut off and is obtained using with the slide substantially in parallel cutting knife of rotation of die face The method arriving is (hereinafter also referred to as " thermal cutting method ".) etc..Either any method, by select compounding conditions, centrifugal condition, Screening condition, cut-out condition etc., all can obtain desired size distribution and grain density.As particularly preferred preparation method, it is It is centrifuged powder method processed, thus obtained particulate resins composition can stably embody desired size distribution and grain density, The aspect that carrying therefore in transport path and cementation prevent is preferred.In addition, being centrifuged in powder method processed, particle surface can be made It is smoothed to a certain degree, therefore, particle will not be made to attract one another, the frictional resistance with transport road diametric plane also will not be made to become big, Bridge joint (blocking) from the supply mouth to transport path that prevent, the aspect preventing delay in transport path are all preferred.In addition, from In heart powder method, formed using centrifugal force by the state melting, therefore, become in particle to comprise the shape in space to a certain degree State, can reduce grain density to a certain degree, therefore, beneficial to the carrying in compression molding.
On the other hand, grinding screen point-score needs research by sieving the processing method of the substantial amounts of micro mist producing and coarse grain, But screening plant etc. is used on the existing production line of resin composition for encapsulating semiconductor 40, therefore, can be direct Aspect using existing production line is preferred.In addition, in grinding screen point-score, by piece thickness during molten resin sheet before pulverizing Selection of sieve etc. when pulverization conditions when selecting, pulverizing, the selection of silk screen, screening, divide for embodying the granularity of the present invention Cloth can independent control many factors, therefore, more in the options for the method that is adjusted to desired size distribution Aspect is preferred.In addition, thermal cutting method also for example with the degree of the front end additional heat cutting mechanism in extruder can directly profit Aspect with existing production line is preferred.
Method as obtaining above-mentioned tablet shape resin combination, for example, pass through to obtain as follows, by each material composition profit Mixed with mixers such as blenders, carry out heating melting mixing further with kneading machines such as roller, kneader or extruders, Pulverize after the cooling period, the crushed material obtaining compression molding is tablet shape.
Method as obtaining above-mentioned flaky resin composition, for example, prepare each material composition or be pre-mixed each The resin combination of composition is dissolved or dispersed in the varnish of organic solvent etc., coating/dry, formation sheet on film.Coating Method is not particularly limited, and can enumerate the method being coated using comma coater, the such coating machine of mould coating machine, lead to Cross stencil printing, method of the such printing of intaglio printing etc..Or it is also possible to resin combination is directly utilized kneader Deng mixing, thus prepare mixing thing, the mixing thing so obtaining extrusion is formed sheet.
< cutting film 20 >
The cutting film 20 of present embodiment is not cut off when by semiconductor wafer 1 singualtion, can keep being attached at The state of the semiconductor chip 5 arriving.As long as this cutting film 20 carries out bonding to semiconductor wafer 1, just it is not particularly limited, for example Can also be made up of support membrane and adhesive phase.
The constituent material of support membrane preferably comprise be selected from polyethylene, polypropylene, ethylene-propylene copolymer, polyolefin, Polybutene, polybutadiene, polymethylpentene, polyvinyl chloride, Vingon, vinyl chloride copolymer, poly terephthalic acid second two Alcohol ester, polybutylene terephthalate (PBT), PEN, polyurethane, ethylene-vinyl acetate copolymer, from Polymers, ethene-(methyl) acrylic copolymer, ethene-(methyl) acrylate copolymer, polystyrene, the poly- isoamyl of vinyl Diene, Merlon, polyphenylene sulfide, polyether-ether-ketone, acrylonitrile-butadiene-styrene copolymer, polyimides, polyetherimide The resin of more than a kind in amine, polyamide, fluororesin.
In addition, in order to improve the surface of support membrane and the adaptation of adhesive phase, it is possible to implement chemically or physical Surface treatment.It should be noted that various additives can also be contained in the range of invention effect not damaging in support membrane (filler, plasticizer, antioxidant, fire retardant, antistatic agent).
In addition, the adhesive phase as cutting belt, it is possible to use by containing acrylic adhesive, elastomeric adhesive, The layer that first resin combination of vinyl alkyl ethers system adhesive, silicon-type adhesive, Polyester adhesive etc. is constituted, its In, preferably acrylic adhesive.
< transfer member 30 (bonding part 30) >
Then, the transfer member 30 of present embodiment is such as above-mentioned, preferably has both and can bear in order that encapsulating semiconductor is used The heat resistance of the degree of heat that resin combination 40 solidifies and applies and fixing semiconductor chip 5 on this transfer member 30 are not The structure of the cohesive of the degree that can depart from.Specifically, the transfer member 30 of present embodiment is preferably supporting base material 200 Structure with ultraviolet curing layer 210 lamination.
Ultraviolet curing layer 210 is made up of the resin combination containing thermoplastic resin and uv curing resin.? This, uv curing resin refers to, ultra-violet solidified monomer, ultra-violet solidified oligomer etc. are anti-with the luminous energy of ultraviolet Become the synthetic resin of solid Ying Ercong aqueous chemical.
As the concrete example of above-mentioned thermoplastic resin, can enumerate:The polyamides such as polyimide resin, polyetherimide resin Polyamide series resin, the acrylic resins etc. such as imines system resin, polyamide, polyamide-imide resin.Wherein, from carrying From the viewpoint of the high initial adaptation with solder bump 2, preferably acrylic resin.It should be noted that it is initially closely sealed Property refers to, the adaptation of starting stage when bonding semiconductor chip 5 and transfer member 30.That is, initial adaptation refer to turn Print part 30 carries out the adaptation before curing process.
As the concrete example of acrylic resin, can enumerate:Acrylic acid, methacrylic acid, methyl acrylate, acrylic acid The methacrylates such as the acrylate such as ethyl ester, methyl methacrylate, EMA, acrylonitrile, acrylamide etc. Polymer and with the copolymer of other monomers etc..Wherein, it is preferably provided with the compound with epoxy radicals, hydroxyl, carboxyl, itrile group etc. Acrylic resin (particularly acrylic copolymer).Thereby, it is possible to improve the adaptation to adherend further.
As the concrete example of uv curing resin, can enumerate:Ultraviolet with acrylic compounds as principal component Line curable resin;Ultraviolet with urethane acrylate oligomer or polyester-polyurethane acrylate oligomer as principal component Curable resin;Ultra-violet solidified as principal component with least a kind in epoxy system resin, vinyl benzene phenol resin Resin etc..Wherein, the ultraviolet from the viewpoint of improving initial adaptation, preferably with acrylic compounds as principal component Curable resin.As the concrete example of this acrylic compounds, the monomer of acrylate or methacrylate can be enumerated Deng.Specifically, as the concrete example of acrylic compounds, can enumerate:Ethylene glycol diacrylate, dimethacrylate Glycol ester, diacrylate 1,6-HD ester, dimethacrylate 1,6-HD ester, glycerol diacrylate, dimethyl 2 functional acrylates such as glycerol acrylate, diacrylate 1,10- decanediol ester, dimethacrylate 1,10- decanediol ester, Trimethylolpropane trimethacrylate, trimethylol-propane trimethacrylate, pentaerythritol triacrylate, trimethyl third The polyfunctional acrylic esters such as olefin(e) acid pentaerythritol ester, six acrylic acid dipentaerythritol ester, hexamethyl acrylic acid dipentaerythritol ester Deng.Wherein, preferably acrylate, the carbon number of particularly preferably esteratic site is 1~15 acrylate or metering system Acid alkyl ester.
The content of uv curing resin with respect to thermoplastic resin 100 weight portion, more than preferably 20 weight portions 55 Below weight portion, below more than more preferably 30 weight portions 40 weight portions.The content of uv curing resin is above-mentioned When more than lower limit, cementability can be kept well.On the other hand, the content of uv curing resin is above-mentioned higher limit When following, good operability can be maintained.
As uv curing resin, and had with intramolecular the hydroxyls such as hydroxyl uv curing resin third In the case of olefin(e) acid ester or methacrylate, can further improve adaptation or the adhesive properties with adherend.
Preferably comprise in thermoplastic resin and the resin combination of uv curing resin and contain Photoepolymerizationinitiater initiater.Logical Cross the surface cure that so can make transfer member 30 by irradiation ultraviolet radiation, therefore, it is possible to improve the stripping of transfer member 30 Characteristic.
As the concrete example of Photoepolymerizationinitiater initiater, can enumerate:Benzophenone, acetophenone, benzoin, benzoin isobutyl Ether, benzoin methyl benzoate, benzoin benzoic acid, benzoin methylether, benzyl phenyl thioether, benzyl, dibenzyl, diacetyl Deng.
In the resin combination containing thermoplastic resin and uv curing resin, resistance to from raising transfer member 30 From the viewpoint of hot, preferably also contain heat-curing resin.As the concrete example of this heat-curing resin, can enumerate:Benzene The phenolic varnish type phenolic resin such as phenol novolac resin, cresol novolac resin, bisphenol A novolac resin;Cresols phenol The phenolic resin such as urea formaldehyde;The bisphenol-type epoxy resins such as bisphenol A epoxide resin, bisphenol F epoxy resin;Novolak type epoxy tree The phenolic resin varnish type epoxy resins such as fat, cresol novolac epoxy;Biphenyl type epoxy resin, stilbene type epoxy resin, triphen Phenol methane type epoxy resin, alkyl-modified tris-phenol type epoxy resin, the epoxy resin containing triazine core, bicyclopentadiene change The epoxy resin such as property phenol type epoxy resin;Ureaformaldehyde (urea) resin, melmac etc. have the resin of triazine ring;Insatiable hunger With polyester resin, bimaleimide resin, polyurethane resin, diallyl phthalate resin, silicones, there is benzo The resin of piperazine ring;Cyanate ester resin etc..These resins can also be used alone a kind it is also possible to and use two or more.Wherein, excellent Elect epoxy resin as.
As this epoxy resin, preferably Cristalline epoxy resin.As this Cristalline epoxy resin, master can be enumerated The resin of the rigid structures such as biphenyl backbone, bisphenol backbone, stilbene skeleton and lower molecular weight is had on chain.Preferably crystallinity asphalt mixtures modified by epoxy resin The reason fat is because at normal temperatures for the solid of crystallization, but the temperature province more than fusing point quickly melts and changes over Low viscous liquid.Thus, it is possible to improve initial adaptation further.
From the viewpoint of improving heat resistance, above-mentioned resin combination preferably also contains filler.Thus, it is possible to enter one Step improves heat resistance.
As the concrete example of filler, can enumerate:The inorganic fillers such as silver, titanium oxide, silica, mica, silicon rubber The organic filler of the particulate of glue, polyimides etc..Wherein, the preferred inorganic filler such as silica filler.
In addition, as supporting base material 200, as long as example by the polyolefin such as polyethylene, polypropylene, ethylene vinyl acetate The making such as copolymer, polyester, polyimides, polyethylene terephthalate, polyvinyl chloride, polyamide, polyurethane heat-resisting Property and the excellent film of chemical proofing it is possible to use.The thickness of substrate layer is not particularly limited it is often preferred that 30~ 500μm.
< diaphragm 10 (bonding part 10) >
Then, diaphragm 10 protection circuit when grinding semiconductor chip 1 forms the face of face opposition side with circuit is formed Face.As long as this diaphragm 10 carries out bonding to semiconductor wafer 1, as long as example by supporting base material 250 (backgrind Band) and ultraviolet curing layer 260 lamination structure.In addition, as shown in fig. 7, diaphragm 10 is also sometimes used as half Guard block during conductor chip 1 singualtion, also makes the direction expansion along along face of this diaphragm 10, sometimes also sometimes for making partly to lead Body resin composition for encapsulating 40 solidifies and applies heat.Therefore, diaphragm 10 preferably has both dilatancy to a certain degree, can hold By in order that resin composition for encapsulating semiconductor 40 heat resistance of the degree of heat that solidifies and apply and on diaphragm 10 solid Fixed semiconductor chip 5 without departing from degree cohesive structure.
Diaphragm 10 is made up of back side grinding tape and ultraviolet curing layer 260.It should be noted that can also grind at back Mold release film 50 is set between grinding belt and ultraviolet curing layer 260.Thus, between back side grinding tape and ultraviolet curing layer 260 Stripping becomes easy.Here, as ultraviolet curing layer 260, can by with the ultraviolet being formed at above-mentioned transfer member 30 Cured layer 210 identical material is formed.
As back side grinding tape, as long as example by the polyolefin such as polyethylene, polypropylene, ethylene vinyl acetate copolymerization The heat resistance of the making such as thing, polyester, polyimides, polyethylene terephthalate, polyvinyl chloride, polyamide, polyurethane and The excellent film of chemical proofing can be to use.The thickness of preferably back side grinding tape is usually 30~500 μm.
< mold release film 50 >
Then, as long as the mold release film 50 of present embodiment has the structure of excellent release property, for example, it is preferable to be There is the structure of the release layer containing material in polyester resin.
The mold release film 50 of present embodiment is that have the demoulding of the release layer containing material in polyester resin (the first release layer) Film 50.
In the mold release film 50 of present embodiment, release layer is the shape when being configured on object to this mold release film 50 of major general The face contacting with object is become (below, also to be indicated as " stripping surface ".) resin bed, polyester resin is polybasic carboxylic acid (dicarboxylic acids) With the condensation polymer of polyalcohol (glycol), that is, there is the compound of multiple carboxyls (- COOH).
In addition, in present embodiment, as the concrete example of material in polyester resin, can enumerate:Poly terephthalic acid second two Alcohol ester resin, polybutylene terephthalate (PBT) resin, polytrimethylene's terephthalate resin, poly terephthalic acid The polyalkylene terephthalates resins such as hexamethylene glycol ester resin.Wherein, preferably use poly terephthalic acid fourth Terephthalate resin.
The mold release film 50 of present embodiment can also form single layer structure it is also possible to form sandwich construction.
More than, embodiments of the present invention are described, but these embodiments be the present invention example it is also possible to Using various structures other than the above.
In addition, in above-mentioned embodiment, illustrating in sealing semiconductor chips 5, using granular semiconductor Resin composition for encapsulating 40 is compressed situation about shaping but it is also possible to form face to semiconductor chip 5 and circuit contrary The face of side, is dried after the resin composition for encapsulating semiconductor 40 being coated with liquid by spin-coating method, print process or distribution method, The resin composition for encapsulating semiconductor 40 that liquid can also be made utilizes capillarity to flow between adjacent semiconductor chip 5 Gap.
In addition, in above-mentioned embodiment, illustrating in sealing semiconductor chips 5, using granular semiconductor Resin composition for encapsulating 40 is compressed situation about shaping but it is also possible to use the semiconductor sealing resin of processing slabbing Composition 40 simultaneously is compressed shaping by following method.
The semiconductor chip 5 being pasted with transfer member 30 is fixed on compression by clamping, adsorbing such fixing means One side of the upper die and lower die of shaping dies.Hereinafter, illustrate semiconductor chip 5 to form the face of face opposition side with circuit Aspectant mode is fixed on the situation of the upper mould of compression mold with resin material supply container.
Then, to become in the way of the corresponding position of semiconductor chip 5 of the upper mould being fixed on mould, under mould The resin composition for encapsulating semiconductor 40 of die cavity interior configuration slice shape.Then, under reduced pressure, the upper die and lower die of mould are reduced Interval, thus, the resin composition for encapsulating semiconductor 40 of sheet is heated to form set point of temperature in lower mode cavity interior, becomes molten Melt state.Then, combined by making the upper die and lower die of mould, make the resin composition for encapsulating semiconductor 40 of molten condition with The semiconductor chip 5 being fixed on mould abuts.By as such, it is possible to utilize the resin composition for encapsulating semiconductor of molten condition 40 landfills are formed at the gap between adjacent semiconductor chip 5, and can utilize the semiconductor sealing resin of molten condition The circuit that composition 40 covers semiconductor chip 5 forms face and the face of circuit formation face opposition side and the side in circuit formation face. Then, holding makes the state that the upper die and lower die of mould combine, while making semiconductor sealing resin using the stipulated time Composition 40 solidifies.By as such, it is possible to make resin composition for encapsulating semiconductor 40 will not remain be not filled by partly good Be filled in the gap being formed between adjacent semiconductor chip 5.
In addition, the resin composition for encapsulating semiconductor 40 of processing slabbing can also be carried out by for example following method Lamination.
First, the resin composition for encapsulating semiconductor 40 of the sheet preparing with roll shape is installed on vacuum pressure type layer Press roll out device, and be connected to devices for taking-up.Then, the basal substrate 10 being formed with the first metal pattern 50 is carried to Barrier film (elastic membrane) formula laminating machine portion.Then, when starting punching press under reduced pressure, the resin composition for encapsulating semiconductor 40 of sheet It is heated to form set point of temperature, becomes molten condition, then, by by resin composition for encapsulating semiconductor 40 warp of molten condition Punching press is carried out by barrier film, abuts with semiconductor chip 5, thus, it is possible to the semiconductor sealing resin combination using molten condition Thing 40 landfill is formed at the gap between adjacent semiconductor chip 5, and can utilize the encapsulating semiconductor tree of molten condition The circuit that oil/fat composition 40 covers semiconductor chip 5 forms face and the face of circuit formation face opposition side and the side in circuit formation face Face.Then, make organic resin film formation resin composition using the stipulated time.By as such, it is possible to make semiconductor close Envelope resin combination 40 will not remain to be not filled by partly being filled in well and be formed between adjacent semiconductor chip 5 Gap.
It should be noted that the situation in the flatness that resin composition for encapsulating semiconductor 40 is required with higher precision Down it is also possible to after using diaphragm type laminating machine punching press, add stamping procedure using being adjusted to high-precision flat decompressor Form.
In addition, in sealing semiconductor chips 5 it is also possible to be combined using the semiconductor sealing resin being processed into tablet shape Thing 40 carries out transfer modling by following method.
First, prepare to be provided with the shaping dies of semiconductor chip 5.The shaping dies that here prepares is provided with:Load tablet The tank of the resin composition for encapsulating semiconductor 40 of shape;Resin composition for encapsulating semiconductor 40 is made to melt in order to apply pressure afterwards Melt and possess the plunger assisting pressure head inserting tank;The resin composition for encapsulating semiconductor 40 of melting is sent in formingspace Cast gate.
Then, into tank, in the state of closing shaping dies, load the resin composition for encapsulating semiconductor of tablet shape 40.Here, it is also possible to by advancing with preheating for loading the form of the resin composition for encapsulating semiconductor 40 in tank Device etc. is preheated and is become the state of semi-molten.Then, in order that loading the resin composition for encapsulating semiconductor in tank 40 meltings, for resin composition for encapsulating semiconductor 40, will be provided with assisting the plunger insertion tank of pressure head and apply pressure.So Afterwards, the resin composition for encapsulating semiconductor 40 of melting is imported in formingspace via cast gate.Then, it is filled in formingspace Interior resin composition for encapsulating semiconductor 40 is solidified by being heated and pressurized.Resin composition for encapsulating semiconductor 40 solidifies Afterwards, open shaping dies, thus, it is possible to be formed at adjacent using resin composition for encapsulating semiconductor 40 landfill of molten condition Semiconductor chip 5 between gap, and can be formed using resin composition for encapsulating semiconductor 40 cover semiconductor chip 5 Circuit formed face and circuit form the face of face opposition side and circuit formed face side semiconductor chip 5.
The Japanese publication Patent 2015-159388 CLAIM OF PRIORITY based on August in 2015 proposition on the 12nd for this application, and will Its entire disclosure is hereby incorporated.

Claims (7)

1. a kind of semiconductor device is it is characterised in that have:
Semiconductor chip;
Solder bump, it forms face located at the circuit of described semiconductor chip;
Encapsulant, it covers the face, the described circuit formation face that form face opposition side with described circuit of described semiconductor chip Side and described circuit formed face,
A part for described solder bump is exposed.
2. semiconductor device as claimed in claim 1 it is characterised in that:
Cover described semiconductor chip described circuit formed face described encapsulant thickness by described solder bump When average height is set to R, for (1/4) more than R (3/4) below R.
3. semiconductor device as claimed in claim 1 or 2 it is characterised in that:
The thickness of the described encapsulant that the described circuit covering described semiconductor chip forms face be more than 10 μm 200 μm with Under.
4. a kind of manufacture method of semiconductor device is it is characterised in that include:
Prepare the operation of structure, this structure possess bonding part and be attached at the adhesive surface of described bonding part multiple half Conductor chip, multiple described semiconductor chips configure with being spaced from each other predetermined distance, and located at multiple described semiconductor chips A part for the solder bump in circuit formation face is attached to the adhesive surface of described bonding part, and described circuit forms and shows out;
So that the resin composition for encapsulating semiconductor of flow regime is contacted with multiple described semiconductor chips, described partly lead to multiple Described resin composition for encapsulating semiconductor is filled in gap between body chip, and utilizes described semiconductor sealing resin group The described circuit that compound covers described semiconductor chip forms face and the described circuit formation face of face opposition side and the work of side Sequence;With
Make the operation of described resin composition for encapsulating semiconductor solidification.
5. semiconductor device as claimed in claim 4 manufacture method it is characterised in that:
Described bonding part has the ultraviolet curing layer being formed by ultraviolet curable resin from the teeth outwards.
6. semiconductor device as claimed in claim 5 manufacture method it is characterised in that:
Described structure is that a part for described solder bump is embedded in the structure in described ultraviolet curing layer.
7. the semiconductor device as any one of claim 4~6 manufacture method it is characterised in that:
Also include the firming body cut-out of described resin composition for encapsulating semiconductor, monolithic chemical conversion is used by described encapsulating semiconductor The operation of multiple semiconductor chips of resin combination sealing.
CN201610663079.5A 2015-08-12 2016-08-12 Semiconductor device and method for manufacturing semiconductor device Pending CN106449529A (en)

Priority Applications (2)

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JP2015-159388 2015-08-12
JP2015159388A JP6634729B2 (en) 2015-08-12 2015-08-12 Method for manufacturing semiconductor device

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JP (1) JP6634729B2 (en)
KR (1) KR20170020253A (en)
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Citations (4)

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Publication number Priority date Publication date Assignee Title
US20010018229A1 (en) * 2000-02-28 2001-08-30 Nbc Corporation Semiconductor device and method for fabricating same
JP2004022656A (en) * 2002-06-13 2004-01-22 Matsushita Electric Ind Co Ltd Semiconductor device and its manufacturing method
CN101369561A (en) * 2007-08-17 2009-02-18 三星电子株式会社 Semiconductor chip package, electronic device and methods of fabricating the electronic device
US20130234308A1 (en) * 2012-03-08 2013-09-12 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor device, semiconductor integrated device and method of manufacturing the same

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Publication number Priority date Publication date Assignee Title
JPH09107046A (en) 1995-10-11 1997-04-22 Hitachi Chem Co Ltd Semiconductor package
JP5496692B2 (en) * 2010-01-22 2014-05-21 三洋電機株式会社 Manufacturing method of semiconductor module
JP5534594B2 (en) 2010-03-30 2014-07-02 リンテック株式会社 Sheet sticking method and wafer processing method

Patent Citations (4)

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Publication number Priority date Publication date Assignee Title
US20010018229A1 (en) * 2000-02-28 2001-08-30 Nbc Corporation Semiconductor device and method for fabricating same
JP2004022656A (en) * 2002-06-13 2004-01-22 Matsushita Electric Ind Co Ltd Semiconductor device and its manufacturing method
CN101369561A (en) * 2007-08-17 2009-02-18 三星电子株式会社 Semiconductor chip package, electronic device and methods of fabricating the electronic device
US20130234308A1 (en) * 2012-03-08 2013-09-12 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor device, semiconductor integrated device and method of manufacturing the same

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TW201717332A (en) 2017-05-16
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JP6634729B2 (en) 2020-01-22
TWI698962B (en) 2020-07-11

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