JP6633603B2 - Thick aluminum electrode with metal plating pretreatment - Google Patents
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Description
本発明は、金属めっき前処理の厚膜アルミニウム電極に関し、特に、純機械方式の処理や、純化学方式のアルカリ洗浄/酸洗い処理、機械と化学とを混合する方式或いは、化学方式の適当な陽極処理等の前処理により、大幅に、厚膜アルミニウム電極の平坦性や酸素含量が改善されるものに関する。 The present invention relates to a thick-film aluminum electrode pre-treatment of metal plating, in particular, a pure mechanical treatment, a pure chemical treatment of alkali washing / pickling treatment, a method of mixing a machine and chemistry, or an appropriate chemical treatment. The present invention relates to one in which the flatness and oxygen content of a thick-film aluminum electrode are significantly improved by pretreatment such as anodization.
金属銀を電極として、ニッケルやスズを利用することより、後工程である金属めっきが、容易になるが、銀が貴金属であるため、貴金属の銀粉を主な導体材料とすると、材料コストが高くなり、材料コストダウンのために、貴金属の厚膜銀電極の代わりに、卑金属の厚膜アルミニウム電極を利用する場合、厚膜アルミニウム電極表面の荒れや容易に酸化する欠点が発生し、後工程の金属めっき工程が困難になる問題がある。 The use of nickel or tin with metallic silver as an electrode makes metal plating in the subsequent process easier, but since silver is a noble metal, using silver powder of noble metal as the main conductor material increases material costs. In order to reduce material costs, when a thick metal aluminum electrode of a base metal is used instead of a thick silver electrode of a noble metal, the surface of the thick aluminum electrode becomes rough and easily oxidized. There is a problem that the metal plating process becomes difficult.
一般の厚膜アルミニウム電極は、表面が荒れで、穴が形成し、図７のように、その厚膜アルミニウム電極を、後工程の金属めっき（ニッケルやスズをめっきすること）に利用する場合、一般の厚膜銀電極を、ニッケルやスズをめっきする時と比較すると、図８のように、明らかに、厚膜銀電極によって、連続且つ平坦なニッケルやスズが得られるが、厚膜アルミニウム電極によっては、ニッケルやスズが、不連続且つ高低不一になり、それは、元々に厚膜アルミニウム電極の表面にあるレベリング不良と、アルミナが形成されたことにより、平坦なニッケルやスズの金属めっきが得られない理由である。 A general thick-film aluminum electrode has a rough surface and a hole, and as shown in FIG. 7, when the thick-film aluminum electrode is used for metal plating (plating nickel or tin) in a later step, Compared to a conventional thick-film silver electrode when nickel or tin is plated, as shown in FIG. 8, a continuous and flat nickel or tin can be obtained by the thick-film silver electrode. In some cases, nickel and tin are discontinuous and uneven in height, which is caused by poor leveling originally on the surface of the thick-film aluminum electrode and the formation of alumina, resulting in flat nickel and tin metal plating. That's why you can't get it.
厚膜銀電極の表面が、平坦で容易に酸化しなくて、後工程のめっきが簡単になるが、銀が貴金属であるため、価額が高く、その代わりに、厚膜アルミニウム電極を利用すれば、その表面の荒れと容易に酸化することにより、後工程のめっきが困難になる。その故、一般の従来のものは、実用的とは言えない。 The surface of the thick-film silver electrode is flat and does not easily oxidize, which simplifies subsequent plating.However, since silver is a noble metal, the price is high, and if a thick-film aluminum electrode is used instead, In addition, the surface is roughened and easily oxidized, so that plating in a later step becomes difficult. Therefore, general conventional ones are not practical.
本発明者は、上記欠点を解消するため、慎重に研究し、また、学理を活用して、有効に上記欠点を解消でき、設計が合理である本発明を提案する。 The inventor of the present invention has studied carefully to solve the above-mentioned drawbacks, and proposes the present invention which can effectively solve the above-mentioned drawbacks by utilizing the theory and has a reasonable design.
本発明の主な目的は、従来技術の上記らの問題を解消するため、純機械方式の処理や純化学方式のアルカリ洗浄/酸洗い処理、機械と化学とを混合する方式或いは、化学方式の適当な陽極処理の前処理を利用して、大幅に、厚膜アルミニウム電極の平坦性と酸素含量を改善して、前処理後の厚膜アルミニウム電極が、後工程の金属めっきにおいて、貴金属の厚膜銀電極と同様な品質を持つものに関する。 The main object of the present invention is to solve the above-mentioned problems of the prior art, pure mechanical processing, pure chemical alkaline cleaning / pickling processing, mixing of machine and chemical, or chemical processing. Using appropriate pre-treatment of anodizing, greatly improve the flatness and oxygen content of the thick-film aluminum electrode, and the thick-film aluminum electrode after pre-treatment can be used in the subsequent metal plating to increase the thickness of the noble metal. It relates to a material having the same quality as a film silver electrode.
本発明は、上記の目的を達成するための、金属めっき前処理の厚膜アルミニウム電極であり、上記厚膜アルミニウム電極に対して、後工程である金属めっきを行う前に、前処理を実行し、上記前処理が、純機械方式の処理や純化学方式のアルカリ洗浄/酸洗い処理、機械と化学とを混合する方式或いは、化学方式の適当な陽極処理であり、上記厚膜アルミニウム電極表面のレベリング不良や非導電部のアルミナを除去して、上記厚膜アルミニウム電極の表面に、後工程の金属めっきにおいて、貴金属の厚膜銀電極と同様な、平坦性と低い酸素含量を持たせるものである。 The present invention, in order to achieve the above object, is a thick-film aluminum electrode of metal plating pre-treatment, for the thick-film aluminum electrode, before performing metal plating in a post-process, performing a pre-treatment , The pretreatment is a pure mechanical treatment or a pure chemical treatment of alkali washing / pickling treatment, a method of mixing the machine and chemistry, or a suitable anodic treatment of a chemical method, By removing leveling defects and alumina in the non-conductive portion, the surface of the thick film aluminum electrode is provided with flatness and a low oxygen content similar to the noble metal thick film silver electrode in the subsequent metal plating. is there.
本発明の実施例によれば、上記純機械方式の処理は、機械式研磨であり、上記厚膜アルミニウム電極と所定の割合で混合した玉金とを、円筒内において、研磨させ、上記玉金と上記厚膜アルミニウム電極とを摩擦させることにより、上記厚膜アルミニウム電極表面のレベリング不良や非導電部のアルミナを除去する。 According to an embodiment of the present invention, the pure mechanical processing is mechanical polishing, wherein the thick film aluminum electrode and a ball mixed at a predetermined ratio are polished in a cylinder, and the ball And the above-mentioned thick-film aluminum electrode are rubbed, thereby removing leveling defects on the surface of the above-mentioned thick-film aluminum electrode and removing alumina in a non-conductive portion.
本発明の実施例によれば、上記玉金の粒度は、0.55〜0.81mmの範囲内であり、上記厚膜アルミニウム電極と上記玉金とのボール／試料比が、1：10の割合で混合して、6.5〜9.5時間に研磨する。 According to an embodiment of the present invention, the particle size of the ball is in the range of 0.55 to 0.81 mm, and the ball / sample ratio of the thick film aluminum electrode and the ball is mixed at a ratio of 1:10. And polish for 6.5-9.5 hours.
本発明の実施例によれば、上記純化学方式のアルカリ洗浄/酸洗い処理は、上記厚膜アルミニウム電極を、円筒にいれ、アルカリ洗浄液や酸洗い液に浸漬し、回転させ、上記アルカリ洗浄液や酸洗い液と、上記厚膜アルミニウム電極とが、侵食反応を起こし、上記厚膜アルミニウム電極表面のレベリング不良や非導電部のアルミナが除去される。 According to the embodiment of the present invention, the alkali cleaning / pickling treatment of the pure chemical method is such that the thick-film aluminum electrode is placed in a cylinder, immersed in an alkali cleaning solution or an acid pickling solution, rotated, and rotated. The pickling solution and the thick-film aluminum electrode cause an erosion reaction, and leveling defects on the surface of the thick-film aluminum electrode and alumina in the non-conductive portion are removed.
本発明の実施例によれば、上記アルカリ洗浄液に、40〜60℃で、12〜18分浸漬する。 According to an embodiment of the present invention, the substrate is immersed in the alkaline cleaning solution at 40 to 60 ° C. for 12 to 18 minutes.
本発明の実施例によれば、上記アルカリ洗浄液は、水酸化ナトリウム（NaOH）や水酸化アンモニウム或いはその組合せである。 According to an embodiment of the present invention, the alkaline cleaning liquid is sodium hydroxide (NaOH), ammonium hydroxide or a combination thereof.
本発明の実施例によれば、上記酸洗い液には、50〜80℃で、12〜18分浸漬する。 According to an embodiment of the present invention, the pickling solution is immersed in the pickling solution at 50 to 80C for 12 to 18 minutes.
本発明の実施例によれば、上記酸洗い液は、硫酸ニッケルや硫酸或いはその組合せである。 According to an embodiment of the present invention, the pickling solution is nickel sulfate, sulfuric acid or a combination thereof.
本発明の実施例によれば、上記化学方式の適当な陽極処理は、上記厚膜アルミニウム電極を円筒に入れ、酸性液に浸漬して回転させ、白金電極を陰極として、上記厚膜アルミニウム電極を陽極とし、25〜35V電圧を印加して、陽極処理反応を行わせ、上記厚膜アルミニウム電極に対して、電解反応を行わせて、上記厚膜アルミニウム電極表面のレベリング不良や非導電部のアルミナを除去する。 According to an embodiment of the present invention, suitable anodic treatment of the above chemical method is to put the thick film aluminum electrode in a cylinder, immerse and rotate in an acidic solution, and use the platinum electrode as a cathode, As an anode, a voltage of 25 to 35 V is applied to cause an anodizing reaction, and an electrolytic reaction is performed on the thick-film aluminum electrode. Is removed.
本発明の実施例によれば、上記酸性液には、25〜65℃で、12〜18分浸漬する。 According to an embodiment of the present invention, the above-mentioned acidic solution is immersed at 25 to 65 ° C. for 12 to 18 minutes.
本発明の実施例によれば、上記酸性液は、リン酸である。 According to an embodiment of the present invention, the acidic liquid is phosphoric acid.
以下、図面を参照しながら、本発明の特徴や技術内容について、詳しく説明するが、それらの図面等は、参考や説明のためであり、本発明は、それによって制限されることが無い。 Hereinafter, the features and technical contents of the present invention will be described in detail with reference to the drawings. However, these drawings and the like are for reference and description, and the present invention is not limited thereto.
図１〜図６は、夫々、本発明に係わる厚膜アルミニウム電極の機械式研磨処理後の表面SEM図や本発明に係わる厚膜アルミニウム電極の機械式研磨処理の表面元素分析概念図、本発明に係わる厚膜アルミニウム電極機械式研磨処理後のニッケルめっきとスズめっきの写真、本発明に係わる厚膜アルミニウム電極化学方式のアルカリ洗浄/酸洗い処理後の表面SEM図、本発明に係わる厚膜アルミニウム電極化学方式の陽極処理後のニッケルめっきのSEM比較図及び本発明に係わる厚膜アルミニウム電極化学方式の適当な陽極処理後のニッケルめっきとスズめっきの写真である。図のように、本発明は、金属めっき前処理の厚膜アルミニウム電極であり、上記厚膜アルミニウム電極に対して、後工程である金属めっきを行う前に、前処理を行い、上記前処理が、純機械方式の処理や純化学方式のアルカリ洗浄/酸洗い処理、機械と化学とを混合する方式或いは化学方式の適当な陽極処理であり、上記厚膜アルミニウム電極表面のレベリング不良や非導電部のアルミナを除去して、上記厚膜アルミニウム電極の表面に、後工程の金属めっきにおいて、貴金属の厚膜銀電極と同様な、平坦性と低い酸素含量を持たせる。上記の流れにより、新規な金属めっき前処理の厚膜アルミニウム電極が得られる。 1 to 6 are a surface SEM diagram after mechanical polishing of a thick-film aluminum electrode according to the present invention and a conceptual diagram of a surface elemental analysis in mechanical polishing of a thick-film aluminum electrode according to the present invention, respectively. Photo of nickel plating and tin plating after mechanical polishing of thick film aluminum electrode according to the present invention, surface SEM diagram after alkali cleaning / pickling treatment of chemical thick film aluminum electrode according to the present invention, thick aluminum according to the present invention FIG. 2 is a SEM comparison diagram of nickel plating after anodization in an electrode chemistry method and photographs of nickel plating and tin plating after an appropriate anodic treatment in a thick-film aluminum electrode chemistry method according to the present invention. As shown in the figure, the present invention is a thick-film aluminum electrode of a pre-treatment of metal plating, and performs a pre-treatment on the thick-film aluminum electrode before performing metal plating as a post-process. , Pure mechanical treatment, pure chemical treatment of alkali washing / pickling treatment, mixing of machine and chemistry, or appropriate anodic treatment of chemical treatment. Is removed so that the surface of the thick-film aluminum electrode has the same flatness and low oxygen content as the noble metal thick-film silver electrode in the subsequent metal plating. With the above flow, a new thick-film aluminum electrode with a pretreatment for metal plating is obtained.
本発明によれば、厚膜アルミニウム電極の表面処理は、所定時間の機械式研磨や所定時間の化学方式のアルカリ洗浄/酸洗い或いは所定時間の化学方式の適当な陽極処理であり、これにより、大幅に、厚膜アルミニウム電極の表面平坦性が改善され、且つ、その酸素含量も、大幅に低下され、厚膜アルミニウム電極の後工程のめっきが簡単になる。 According to the present invention, the surface treatment of the thick-film aluminum electrode is a suitable time of mechanical polishing, a predetermined time of alkali cleaning / pickling for a predetermined time or a suitable anodic treatment of a predetermined time of a chemical method, Significantly, the surface flatness of the thick-film aluminum electrode is improved, and its oxygen content is also greatly reduced, which simplifies subsequent plating of the thick-film aluminum electrode.
機械式研磨処理の実施例において、本発明は、厚膜アルミニウム電極のチップ抵抗を、所定割合で混合された、粒度が0.55〜0.81mmの範囲内にある玉金と一緒に、円筒内に入れ、上記厚膜アルミニウム電極のチップ抵抗と、ボール／試料比の1：10割合で混合された上記玉金とを、8時間に研磨させ、上記玉金と上記チップ抵抗の厚膜アルミニウム電極とが摩擦して、上記厚膜アルミニウム電極表面のレベリング不良やアルミナが除去され、厚膜アルミニウム電極の表面平坦性が大幅に改善されて、非導電部のアルミナが去除される。図１は、バーレル仕上げや紙やすりバッフィングを行った後の厚膜アルミニウム電極表面の、異なる倍率の顕微構成であり、明らかに、機械式研磨により、表面には、微細の穴があっても、表面平坦性が、大幅に改善される。本発明は、更に、機械式処理後の厚膜アルミニウム電極と処理されていない厚膜アルミニウム電極とを、表面について、元素分析を行い、図２のように、図(a)が前処理なしで、右側の図(b)が前処理ありであり、比較すると、表面の酸素含量が大幅に低下され、それは、機械式処理後の厚膜アルミニウム電極表面にあるアルミナの含量が大幅に低下されることを、意味する。 In an embodiment of the mechanical polishing process, the present invention puts the chip resistance of the thick film aluminum electrode in a cylinder, together with the ball metal mixed in a predetermined ratio and having a particle size in the range of 0.55 to 0.81 mm. The chip resistance of the thick-film aluminum electrode and the ball metal mixed at a ball / sample ratio of 1:10 are polished for 8 hours, so that the ball metal and the thick-film aluminum electrode of the chip resistor are polished. The friction causes the leveling defect and the alumina on the surface of the thick film aluminum electrode to be removed, the surface flatness of the thick film aluminum electrode is greatly improved, and the alumina in the non-conductive portion is removed. FIG. 1 shows the microstructure of the thick-film aluminum electrode surface after barrel finishing and sanding buffing at different magnifications. Obviously, even if there are fine holes on the surface due to mechanical polishing, Surface flatness is greatly improved. The present invention further performs elemental analysis on the surface of the thick-film aluminum electrode after the mechanical treatment and the untreated thick-film aluminum electrode, and FIG. The right figure (b) is with pretreatment, and by comparison, the oxygen content on the surface is significantly reduced, which means that the content of alumina on the surface of the thick film aluminum electrode after mechanical treatment is significantly reduced That means.
本発明は、上記機械式研磨処理後の厚膜アルミニウム電極端子のチップ抵抗に対して、ニッケルめっきやスズめっきを行い、その中、ニッケルの場合は、21Aの電流で、40分にめっきし、スズの場合は、7Aの電流で、40分にめっきし、その後、アルミニウム電極端子のチップ抵抗工程を行う。図３には、(a)が前処理なしのサンプルであり、ニッケルめっき層の多い箇所が、連続していなく、また、(b)が、機械式研磨処理後の厚膜アルミニウム電極のニッケルめっきとスズめっきの写真であり、既存の貴金属の厚膜銀電極のニッケルめっきとスズめっきの品質と変わらないことから、連続性や平坦性が優れることが、分かる。これから分かるように、本発明に係る機械式前処理の厚膜アルミニウム電極は、そのニッケルめっきやスズめっきの品質が、一般の貴金属の厚膜銀電極のニッケルめっきとスズめっきの品質と一致する。 The present invention performs nickel plating or tin plating on the chip resistance of the thick-film aluminum electrode terminals after the mechanical polishing treatment, and among them, in the case of nickel, plating with a current of 21 A, for 40 minutes, In the case of tin, plating is performed at a current of 7 A for 40 minutes, and then a chip resistance step of aluminum electrode terminals is performed. In FIG. 3, (a) is a sample without pre-treatment, and a portion with many nickel plating layers is not continuous, and (b) is a nickel plating of a thick film aluminum electrode after mechanical polishing. These are photographs of tin plating and tin plating, which show the same continuity and flatness as the quality of nickel plating and tin plating of existing noble metal thick film silver electrodes. As can be seen, the quality of the nickel plating and tin plating of the thick aluminum electrode of the mechanical pretreatment according to the present invention matches the quality of nickel plating and tin plating of a general noble metal thick silver electrode.
化学方式のアルカリ洗浄/酸洗い処理の実施例において、厚膜アルミニウム電極のチップ抵抗を円筒に入れて、アルカリ洗浄液（0.25 M NaOH，温度：50℃）や酸洗い液（硫酸ニッケル：410 g/l，硫酸：10 %，温度：65℃）に浸漬し、約15分に回転させ、上記アルカリ洗浄液や酸洗い液と、上記チップ抵抗の厚膜アルミニウム電極とが、侵食反応を行って、上記厚膜アルミニウム電極表面のレベリング不良やアルミナを除去し、厚膜アルミニウム電極表面の平坦性が大幅に改善され、また、非導電部のアルミナが除去される。図４は、化学方式のアルカリ洗浄や酸洗い処理後の厚膜アルミニウム電極表面の微構成図であり、その中、図(a)が、化学処理前の表面微構成で、図(b)が、アルカリ性の化学処理後の表面微構成であって、図(c)が、酸性の化学処理後の表面微構成である。上記の機械式前処理の厚膜アルミニウム電極と同じように、化学アルカリ洗浄や酸洗い前処理を受けた厚膜アルミニウム電極は、その平坦性が大幅に改善され、厚膜アルミニウム電極の表面に、穴が存在しても、化学方式のアルカリ洗浄や酸洗い処理後の厚膜アルミニウム電極に対して、ニッケルめっきやスズめっきを行うと、既存の貴金属の厚膜銀電極のニッケルめっきとスズめっきの品質と変わらないことから、連続性や平坦性が優れることが、分かる。これから分かるように、本発明に係る化学方式のアルカリ洗浄や酸洗い前処理の厚膜アルミニウム電極は、そのニッケルめっきやスズめっきの品質が、一般の貴金属の厚膜銀電極のニッケルめっきとスズめっきの品質と一致する。 In the embodiment of the chemical alkali washing / pickling treatment, the chip resistance of the thick film aluminum electrode is put in a cylinder, and an alkali washing solution (0.25 M NaOH, temperature: 50 ° C.) or an acid washing solution (nickel sulfate: 410 g / l, sulfuric acid: 10%, temperature: 65 ° C) and rotated for about 15 minutes. The alkali cleaning solution or pickling solution and the thick-film aluminum electrode of the chip resistor perform an erosion reaction, Leveling defects and alumina on the surface of the thick-film aluminum electrode are removed, the flatness of the surface of the thick-film aluminum electrode is greatly improved, and alumina in the non-conductive portion is removed. FIG. 4 is a microstructure diagram of the surface of a thick-film aluminum electrode after a chemical alkali cleaning or pickling treatment. FIG. 4 (a) shows the surface microstructure before the chemical treatment, and FIG. FIG. 3C shows the surface microstructure after the alkaline chemical treatment, and FIG. 3C shows the surface microstructure after the acidic chemical treatment. Like the thick aluminum electrode of the mechanical pretreatment described above, the thick aluminum electrode that has been subjected to chemical alkali cleaning or pickling pretreatment has significantly improved flatness, and the surface of the thick aluminum electrode has Even if holes are present, nickel plating or tin plating is applied to the thick film aluminum electrode after chemical alkali washing or pickling treatment. It can be seen that the continuity and flatness are excellent because the quality is not different from the quality. As can be seen, the thick-film aluminum electrode of the present invention, which has been subjected to the chemical pretreatment of alkali cleaning or pickling, has a high quality of nickel plating or tin plating, and nickel plating or tin plating of a general noble metal thick-film silver electrode. Match the quality of.
化学方式の陽極処理の実施例において、厚膜アルミニウム電極のチップ抵抗を円筒に入れて、酸性液（リン酸 ：1/10 Vol%，温度：25〜65℃）に浸漬し、白金電極を陰極として、上記厚膜アルミニウム電極のチップ抵抗を陽極とし、30V電圧を印加して、陽極処理反応を行わせ、約15分に回転させ、上記チップ抵抗の厚膜アルミニウム電極から、電解反応（Al→Al3++3e-）により、上記厚膜アルミニウム電極表面のレベリング不良やアルミナが除去され、厚膜アルミニウム電極の表面平坦性が大幅に改善され、また、非導電部のアルミナが除去される。上記化学方式の陽極処理で異なる時間に実行された後のアルミニウム電極端子チップに対して、ニッケルめっきを行い、図５の(a)と(b)及び(c)は、それぞれ、厚膜アルミニウム電極に対して、化学方式の陽極処理を行っていない時と適当に行った時及び過度に陽極処理された時のニッケルめっきの表面構成であり、処理されていない厚膜アルミニウム電極端子のニッケルめっき（Ni：21A，60分）が、ニッケルめっきが散在する不連続性を示し、15分に陽極処理された厚膜アルミニウム電極のニッケルめっき（Ni：21A，60分）が、片状になって連続性のあるニッケルになるが、陽極処理時間が40分になると、厚膜アルミニウム電極のアルミニウムが、再びに酸化反応が発生するため、めっきにより、再び、ニッケルめっきが散在する不連続性を示す。そのため、本発明は、厚膜アルミニウム電極端子のチップ抵抗に対して、選択的に、化学方式の適当な陽極処理を行った後、ニッケルめっきやスズめっきを行って、ニッケルの場合、21A電流で、60分めっきして、スズの場合、7A電流で、60分めっきするように、アルミニウム電極端子のチップ抵抗工程が行われる。上記化学方式の適当な陽極処理された厚膜アルミニウム電極に、ニッケルめっきやスズめっきを行うと、図６の写真のようになり、(a)が、前処理なしのサンプルであり、ニッケルめっき層の多い箇所が、連続していなく、また、(b)が、化学方式の適当な陽極処理後の厚膜アルミニウム電極のニッケルめっきとスズめっきの写真であり、既存の貴金属の厚膜銀電極のニッケルめっきとスズめっきの品質と変わらないことから、連続性や平坦性が優れることが、分かる。これから分かるように、本発明に係る化学方式の適当な陽極前処理の厚膜アルミニウム電極は、そのニッケルめっきやスズめっきの品質が、一般の貴金属の厚膜銀電極のニッケルめっきとスズめっきの品質と一致する。 In the embodiment of the chemical anodization, the chip resistance of the thick-film aluminum electrode was put in a cylinder, immersed in an acid solution (phosphoric acid: 1/10 Vol%, temperature: 25 to 65 ° C), and the platinum electrode was converted to a cathode. As the anode of the thick-film aluminum electrode, the anode resistance is applied by applying a voltage of 30 V, and the anode is rotated for about 15 minutes. The electrolytic reaction (Al → Al 3+ + 3e-) removes the leveling defect and the alumina on the surface of the thick-film aluminum electrode, significantly improves the surface flatness of the thick-film aluminum electrode, and removes the alumina in the non-conductive portion. Nickel plating was performed on the aluminum electrode terminal chip after being performed at different times in the above-described anodization in the chemical method, and (a), (b) and (c) of FIG. On the other hand, the surface structure of nickel plating when chemical anodic treatment is not performed, when it is appropriately performed, and when it is excessively anodized, is nickel plating of untreated thick aluminum electrode terminals ( (Ni: 21A, 60 minutes) shows discontinuity with scattered nickel plating, and nickel plating (Ni: 21A, 60 minutes) of thick-film aluminum electrode anodized in 15 minutes becomes flaky and continuous Although the nickel has a characteristic, when the anodizing time is 40 minutes, the aluminum of the thick-film aluminum electrode undergoes an oxidation reaction again, so that the plating shows a discontinuity in which nickel plating is scattered again. Therefore, the present invention selectively performs an appropriate anodic treatment of a chemical method on the chip resistance of the thick-film aluminum electrode terminal, and then performs nickel plating or tin plating. In the case of tin, the chip resistance process of the aluminum electrode terminal is performed such that the tin is plated at a current of 7 A for 60 minutes. When nickel plating or tin plating is applied to a suitable thick anodized aluminum electrode of the above-mentioned chemical method, a picture as shown in FIG. 6 is obtained. (A) is a sample without pretreatment, and the nickel plating layer Most of the parts are not continuous, and (b) is a photograph of nickel plating and tin plating of a thick aluminum electrode after appropriate anodic treatment of a chemical method. Since the quality is the same as the quality of nickel plating and tin plating, it can be seen that the continuity and flatness are excellent. As can be seen, the thick-film aluminum electrode of the anodic pretreatment suitable for the chemical method according to the present invention has the quality of nickel plating and tin plating, and the quality of nickel plating and tin plating of a general noble metal thick-film silver electrode. Matches.
以上のように、本発明によれば、厚膜アルミニウム電極の後工程である金属めっきの問題が解消され、純機械方式の処理や純化学方式のアルカリ洗浄/酸洗い処理、機械と化学とを混合する方式或いは化学方式の適当な陽極処理の前処理によって、大幅に厚膜アルミニウム電極の平坦性や酸素含量が改善され、処理された後の厚膜アルミニウム電極の後工程である金属めっきの品質が、貴金属の厚膜銀電極の品質に相当する。 As described above, according to the present invention, the problem of metal plating, which is a post-process of a thick-film aluminum electrode, is solved, and pure mechanical processing or pure chemical alkaline cleaning / pickling processing, and mechanical and chemical processing are performed. Appropriate pretreatment of mixing or chemical anodization significantly improves the flatness and oxygen content of the thick aluminum electrode, and the quality of metal plating, which is a post-process of the thick aluminum electrode after the treatment. Corresponds to the quality of the noble metal thick film silver electrode.
以上のように、本発明に係る金属めっき前処理の厚膜アルミニウム電極は、有効的に、従来の諸欠点を解消でき、後工程である金属めっきを行う前に、厚膜アルミニウム電極に対して、前処理を行い、上記前処理が、純機械方式の処理や純化学方式のアルカリ洗浄/酸洗い処理、機械と化学とを混合する方式或いは、適当な化学方式の陽極処理であり、上記厚膜アルミニウム電極表面のレベリング不良や非導電部のアルミナを除去して、上記厚膜アルミニウム電極の表面に、後工程の金属めっきにおいて、貴金属の厚膜銀電極と同様な、平坦性と低い酸素含量を持たせる。そのため、本発明は、より進歩的かつより実用的で、法に従って発明登録請求を出願する。 As described above, the thick film aluminum electrode of the metal plating pretreatment according to the present invention can effectively eliminate the conventional disadvantages, and before performing the metal plating which is a post-process, with respect to the thick film aluminum electrode. , Pre-treatment, the pre-treatment is pure mechanical treatment, pure chemical treatment of alkali washing / pickling treatment, mixing of machine and chemistry, or an appropriate chemical treatment of anodic treatment, The leveling defect on the surface of the film aluminum electrode and the alumina in the non-conductive portion are removed, and the flatness and low oxygen content similar to the noble metal thick film silver electrode are obtained on the surface of the thick film aluminum electrode in the subsequent metal plating. To have. Therefore, the present invention is more advanced and more practical, and file an invention registration request according to law.
以上は、ただ、本発明のより良い実施例であり、本発明は、それによって制限されることが無く、本発明に係わる特許請求の範囲や明細書の内容に基づいて行った等価の変更や修正は、全てが、本発明の特許請求の範囲内に含まれる。 The above is merely a better embodiment of the present invention, and the present invention is not limited thereto, and equivalent changes and modifications made based on the claims and the description of the present invention are described. All modifications are within the scope of the claims of the present invention.
Claims (1)
後工程である金属めっきを行う前に、厚膜アルミニウム電極に対して、純機械方式の処理で前処理を行う金属めっき前処理の厚膜アルミニウム電極の前処理工程と、
前記前処理を行なった後に、金属めっきを行なう金属めっき工程と、を備え、
前記金属めっき前処理の厚膜アルミニウム電極の前処理工程は、
前記厚膜アルミニウム電極と所定の割合で混合した玉金とを、円筒内において、研磨させ、前記玉金と前記厚膜アルミニウム電極とを摩擦させることにより、前記厚膜アルミニウム電極表面のレベリング不良や非導電部のアルミナを除去する機械式研磨であり、
前記玉金の粒度は、０．５５〜０．８１ｍｍの範囲内であり、
前記厚膜アルミニウム電極と前記玉金とのボール／試料比が、１：１０の割合で混合して、６．５〜９．５時間に研磨するものであり、
金属めっき工程は、前記前記金属めっき前処理の厚膜アルミニウム電極の前処理工程の後の前記厚膜アルミニウム電極に対して、ニッケルの場合は２１Ａで４０分めっきし、スズの場合は７Ａで４０分めっきする
ことを特徴とする厚膜アルミニウム電極の製造方法。 A method of manufacturing a thick-film aluminum electrode,
Before performing metal plating, which is a post-process, for the thick-film aluminum electrode, a pre-treatment process of the thick-film aluminum electrode of the metal-plating pre-treatment of performing a pre-treatment by pure mechanical processing,
After performing the pretreatment, a metal plating step of performing metal plating,
The pre-treatment step of the thick-film aluminum electrode of the metal plating pre-treatment ,
And Tamakin mixed with the thick film of aluminum electrode and the predetermined ratio, in the cylinder, is polished, by friction between the thick aluminum electrode and the Tamakin, defective Ya leveling of the thick film of aluminum electrode surface Ri mechanical polishing der to remove the alumina nonconductive portion,
The particle size of the Tamakin is in the range of 0.55～0.81Mm,
Ball / sample ratio of the thick aluminum electrode and the Tamakin is were mixed 1: 10 ratio, is intended to polish the 6.5 to 9.5 hours,
In the metal plating step, the thick film aluminum electrode after the pretreatment step of the thick film aluminum electrode in the metal plating pretreatment is plated with nickel at 40A for 21 minutes in the case of nickel, and with tin in the case of 7A in the case of tin. Plating
A method for producing a thick-film aluminum electrode, comprising:
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