TWI679316B - Titanium cathode surface modification method for electroplating low-roughness copper foil - Google Patents

Titanium cathode surface modification method for electroplating low-roughness copper foil Download PDF

Info

Publication number
TWI679316B
TWI679316B TW107119717A TW107119717A TWI679316B TW I679316 B TWI679316 B TW I679316B TW 107119717 A TW107119717 A TW 107119717A TW 107119717 A TW107119717 A TW 107119717A TW I679316 B TWI679316 B TW I679316B
Authority
TW
Taiwan
Prior art keywords
acid
conductive layer
plating
titanium cathode
etching
Prior art date
Application number
TW107119717A
Other languages
Chinese (zh)
Other versions
TW202001007A (en
Inventor
竇維平
Dow Wei Ping
林彥丞
Lin Yen Chen
顏志翰
Yen Chin Han
Original Assignee
國立中興大學
National Chung Hsing University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 國立中興大學, National Chung Hsing University filed Critical 國立中興大學
Priority to TW107119717A priority Critical patent/TWI679316B/en
Application granted granted Critical
Publication of TWI679316B publication Critical patent/TWI679316B/en
Publication of TW202001007A publication Critical patent/TW202001007A/en

Links

Landscapes

  • Electroplating Methods And Accessories (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Cell Electrode Carriers And Collectors (AREA)

Abstract

一種鈦陰極表面改質方法用於電鍍低粗糙度銅箔,包括:步驟一,提供鈦陰極,該鈦陰極的表面可以是未經改質的、經化學改質的、或經物理改質的;步驟二,鈦陰極的表面經一電鍍步驟析出一導電層;步驟三,將該導電層經一蝕刻步驟而成為一蝕刻膜;步驟四,該蝕刻膜的表面經一電鍍步驟析出一導電層;步驟五,重覆步驟三及步驟四至少一次。本發明之方法可獲得表面亮度顯著提昇且粗糙度顯著降低的鈦陰極,可電鍍析出光面且低粗糙度的生銅箔。 A method for modifying the surface of a titanium cathode for electroplating a low-roughness copper foil includes the following steps. A titanium cathode is provided. The surface of the titanium cathode may be unmodified, chemically modified, or physically modified. Step two, a conductive layer is deposited on the surface of the titanium cathode through an electroplating step; step three, the conductive layer is subjected to an etching step to form an etching film; step four, a conductive layer is precipitated on the surface of the etching film through an electroplating step ; Step five, repeat steps three and four at least once. The method of the present invention can obtain a titanium cathode with a significantly improved surface brightness and a significantly reduced roughness, and a copper foil having a smooth surface and low roughness can be electroplated.

Description

鈦陰極表面改質方法用於電鍍低粗糙度銅箔 Titanium cathode surface modification method for plating low-roughness copper foil

本發明與電鍍銅箔的電鍍裝置有關,更詳而言之,本發明涉及該電鍍裝置的鈦陰極的表面改質方法。通過本發明之方法獲得表面亮度提昇且粗糙度降低的鈦陰極,可電鍍析出光面為低粗糙度的生銅箔。 The present invention relates to an electroplating device for electroplating a copper foil. More specifically, the present invention relates to a surface modification method of a titanium cathode of the electroplating device. By the method of the present invention, a titanium cathode with improved surface brightness and reduced roughness is obtained, and a copper foil with a low roughness can be electroplated and deposited with a smooth surface.

鈦製陰極電極被廣泛使用於電鍍銅箔的製造。在一電鍍裝置中通過一電鍍程序在鈦陰極的表面析出薄銅層並剝除而獲得銅箔生箔。生銅箔緊貼鈦陰極的面稱為光面(S面),而另一面稱之為粗面或毛面(M面)。日本JIS標準規定電鍍銅箔的光面的表面粗糙度Ra值應在0.4μm以下。 Titanium cathode electrodes are widely used in the manufacture of electroplated copper foil. A copper foil is obtained by depositing a thin copper layer on the surface of the titanium cathode by a plating process in a plating apparatus and peeling it off. The side of the green copper foil that is in close contact with the titanium cathode is called the smooth side (S-side), and the other side is called the rough or matte side (M-side). The Japanese JIS standard stipulates that the surface roughness Ra value of the smooth surface of the electroplated copper foil should be 0.4 μm or less.

鈦陰極表面會因長期的電鍍銅箔製程及氧化等因素而發生粗糙現象及形成二氧化鈦。鈦陰極表面一旦變粗糙,電鍍銅箔之光面也跟著變粗糙。而二氧化鈦遮蔽了導電性佳的純鈦在陰極上的顯露面積,使鈦陰極導電度弱化且導電度不均勻,因此電鍍生銅箔的光面就形成了較粗的銅顆粒而變得粗糙。這樣的變化是不被容許的。只要電鍍銅箔光面Ra值超過預定的管理值,就需進行鈦陰極的表面研磨(一般稱之為鈦陰極保養),除了整平鈦陰極表面的凹凸狀態之外,亦將導電性不佳的二氧化鈦層打磨掉,使導電性較佳的純鈦層顯露出來。 The surface of the titanium cathode will be roughened and titanium dioxide formed due to long-term electroplated copper foil process and oxidation. Once the surface of the titanium cathode becomes rough, the smooth surface of the electroplated copper foil also becomes rough. Titanium dioxide shields the exposed area of pure conductive titanium on the cathode, weakening the conductivity of the titanium cathode and making the conductivity non-uniform. Therefore, the rough surface of the electroplated green copper foil forms coarse copper particles and becomes rough. Such changes are not allowed. As long as the Ra value of the electroplated copper foil exceeds a predetermined management value, the surface of the titanium cathode needs to be polished (commonly referred to as titanium cathode maintenance). In addition to flattening the unevenness of the surface of the titanium cathode, the conductivity is also poor. The titanium dioxide layer was polished away to expose the pure titanium layer with better conductivity.

但是,鈦陰極的表面研磨保養並不能保證鍍出來的生銅箔的光面 的表面粗糙度可達到預期標準(如前述Ra值應在0.4μm以下),因此生銅箔的光面必需再經其他的表面處理程序以降低其表面粗糙度。 However, the surface polishing and maintenance of the titanium cathode cannot guarantee the smooth surface of the plated green copper foil. The surface roughness can reach the expected standard (such as the aforementioned Ra value should be less than 0.4 μm), so the smooth surface of the green copper foil must be subjected to other surface treatment procedures to reduce its surface roughness.

本發明提出一種鈦陰極表面改質方法。 The invention provides a method for surface modification of a titanium cathode.

一種鈦陰極表面改質方法用於電鍍低粗糙度銅箔,包括:步驟一,提供鈦陰極,該鈦陰極的表面可以是未經改質的、經化學改質的、或經物理改質的;步驟二,鈦陰極的表面經一電鍍步驟析出一導電層;步驟三,將該導電層經一蝕刻步驟而成為一蝕刻膜;該蝕刻步驟為浸泡酸蝕液,酸蝕液pH值:-0.20~1.30,浸泡時間為5~30分鐘;步驟四,該蝕刻膜的表面經一電鍍步驟析出一導電層;步驟四的電鍍步驟與步驟二的電鍍步驟相同;步驟五,重覆步驟三及步驟四至少一次。 A method for modifying the surface of a titanium cathode for electroplating a low-roughness copper foil includes the following steps. A titanium cathode is provided. The surface of the titanium cathode may be unmodified, chemically modified, or physically modified. Step two, a conductive layer is deposited on the surface of the titanium cathode through an electroplating step; step three, the conductive layer is subjected to an etching step to form an etching film; the etching step is an immersion of an acid etching solution, the pH of the acid etching solution:- 0.20 ~ 1.30, immersion time is 5 ~ 30 minutes; step four, a conductive layer is deposited on the surface of the etching film through a plating step; step four is the same as step two; step five, repeat steps three and Step four at least once.

本發明之功效:本發明之方法可獲得表面亮度顯著提昇且粗糙度顯著降低的鈦陰極,可電鍍析出光面為低粗糙度的生銅箔。 Efficacy of the present invention: The method of the present invention can obtain a titanium cathode with a significantly improved surface brightness and a significantly reduced roughness, and can produce a copper foil with a low roughness on the electroplated surface.

本發明可實現於表面未經改質的、經化學改質的、或經物理改質的鈦陰極,均具有顯著提昇表面亮度及降低粗糙度的效果。 The invention can be realized on titanium cathodes whose surface is not modified, chemically modified, or physically modified, all of which have the effects of significantly improving surface brightness and reducing roughness.

在本發明較佳實施例中,本發明對鈦陰極表面總共實施了三次鍍導電層(銅層)和兩次蝕刻步驟,從獲得的表面粗糙度數據顯示,每一次都顯著降低了鈦陰極的表面粗糙度。合於邏輯的推測是,實施愈多次的鍍導電層(銅層)和蝕刻步驟,可以使鈦陰極的表面粗糙度更降低。可按照產業的需 求選擇適當的次數,控制鈦陰極的表面粗糙度以獲得符合產業要求的低粗糙度生銅箔。 In the preferred embodiment of the present invention, a total of three conductive plating (copper layer) and two etching steps are performed on the surface of the titanium cathode. The obtained surface roughness data shows that each time the titanium cathode is significantly reduced. Surface roughness. It is logically speculated that the surface roughness of the titanium cathode can be further reduced by implementing more conductive plating (copper layer) and etching steps. According to the needs of the industry Select an appropriate number of times to control the surface roughness of the titanium cathode to obtain a low-roughness copper foil that meets the industry requirements.

第一圖,本發明第一實施例之鈦陰極的表面圖像,a為經本發明步驟二處理後鈦陰極的表面圖像,b為經本發明步驟二、三及四處理後的鈦陰極表面圖像;c為經本發明步驟二、三、四、五處理後的鈦陰極表面圖像。 First image, a surface image of the titanium cathode according to the first embodiment of the present invention, a is a surface image of the titanium cathode after the step 2 of the present invention, and b is a surface view of the titanium cathode after the steps 2, 3, and 4 of the present invention Image; c is the surface image of the titanium cathode after the steps 2, 3, 4 and 5 of the present invention.

第二圖,本發明第一實施例之方法所改質的鈦陰極表面亮度值。 The second figure shows the brightness value of the titanium cathode surface modified by the method of the first embodiment of the present invention.

第三圖,本發明第二實施例之方法所改質的鈦陰極表面1000倍SEM圖像。 The third figure is a 1000-times SEM image of the titanium cathode surface modified by the method of the second embodiment of the present invention.

第四圖,本發明第二實施例之方法所改質的鈦陰極表面粗糙度(Ra)值。 The fourth figure shows the surface roughness (Ra) value of titanium cathode modified by the method of the second embodiment of the present invention.

第一實施例First embodiment

本發明鈦陰極表面改質方法,包括: The titanium cathode surface modification method of the invention comprises:

步驟一,鈦陰極表面接觸pH值<0或pH值為0~4的強酸液體14~28小時之後取出將其乾燥,鈦陰極表面為經化學改質的表面;在此步驟中使用的強酸液體為食人魚洗液(Piranha Solution)。 Step 1: The surface of the titanium cathode is contacted with a strong acid liquid with a pH value of <0 or a pH value of 0 to 4 after 14 to 28 hours to take it out and dry it. The surface of the titanium cathode is a chemically modified surface; the strong acid liquid used in this step Piranha Solution.

步驟二,鈦陰極經化學改質的表面經一電鍍步驟析出一導電層;該導電層為銅層。 In step two, a chemically modified surface of the titanium cathode precipitates a conductive layer through a plating step; the conductive layer is a copper layer.

該電鍍步驟中採用的電鍍液組成分包含可溶性銅鹽、pH調整劑、以及添加劑。可溶性銅鹽,優選為硫酸銅五水化合物,145g/L~250g/L,優選為220g/L。pH調整劑,包含但不限於硝酸、鹽酸、硫酸、磷酸;優選為硫酸,濃度為3%~10%(V/V);pH為-0.20~1.30。添加劑:包含氯離子、 加速劑、平整劑、抑制劑。其中,氯離子濃度為5~50ppm,優選為10ppm。加速劑選自硫醇類化合物,包含但不限於SPS(聚二硫二丙烷磺酸鈉)、MPS(3-巰基-1-丙烷磺酸鈉)、DPS(N,N-二甲基-二硫代羰基丙烷磺酸鈉)、ZPS(3-(苯駢噻唑-2-巰基)-丙烷磺酸鈉)、UPS(硫脲丙基硫酸鹽)之擇一;濃度為50~150ppm,優選為100ppm。平整劑選自有機含氮雜環化合物,包含但不限於JGB(Janus Green B)、DB(Diazine Black)、MV(Methylene Violet 3RAX)、SO(Safranine O)、ABPV(Alcian Blue Pyridine Variant)及BTA(Benzotriazole),濃度為5~100ppm,優選為10ppm。抑制劑選自聚乙二醇(Polyethlene glycol,PEG),分子量3000~12000,濃度為50~300ppm,優選為200ppm。 The composition of the plating solution used in this plating step includes a soluble copper salt, a pH adjuster, and an additive. The soluble copper salt is preferably a copper sulfate pentahydrate, 145 g / L to 250 g / L, and preferably 220 g / L. The pH adjuster includes, but is not limited to, nitric acid, hydrochloric acid, sulfuric acid, and phosphoric acid; sulfuric acid is preferred; the concentration is 3% to 10% (V / V); and the pH is -0.20 to 1.30. Additives: Contains chloride ions, Accelerators, levelers, inhibitors. Among them, the chloride ion concentration is 5 to 50 ppm, and preferably 10 ppm. The accelerator is selected from thiol compounds, including but not limited to SPS (sodium dithiodipropane sulfonate), MPS (sodium 3-mercapto-1-propane sulfonate), DPS (N, N-dimethyl-di- Alternatives to sodium thiocarbonylpropane sulfonate), ZPS (3- (benzothiothiazol-2-mercapto) -sodium propane sulfonate), UPS (thioureapropyl sulfate); concentration is 50 ~ 150ppm, preferably 100ppm. The leveling agent is selected from organic nitrogen-containing heterocyclic compounds, including but not limited to JGB (Janus Green B), DB (Diazine Black), MV (Methylene Violet 3RAX), SO (Safranine O), ABPV (Alcian Blue Pyridine Variant), and BTA (Benzotriazole) at a concentration of 5 to 100 ppm, preferably 10 ppm. The inhibitor is selected from polyethylene glycol (Polyethlene glycol, PEG), the molecular weight is 3000-12000, and the concentration is 50-300ppm, preferably 200ppm.

該電鍍步驟中採用不溶性陽極,材料可為鉑、氧化銥/鈦、氧化銥/五氧化二鉭/鈦。鍍液溫度為25~65℃、優選為30~40℃。電流密度:30~50ASD。銅液需攪拌,包含但不限空氣攪拌、馬達噴流攪拌、葉片攪拌、磁石攪拌等。 An insoluble anode is used in the electroplating step, and the material may be platinum, iridium oxide / titanium, iridium oxide / tantalum pentoxide / titanium. The bath temperature is 25 to 65 ° C, preferably 30 to 40 ° C. Current density: 30 ~ 50ASD. The copper liquid needs to be stirred, including but not limited to air stirring, motor jet stirring, blade stirring, magnet stirring, and the like.

步驟三,將該導電層(銅層)經一蝕刻步驟而成為一蝕刻膜。蝕刻步驟為浸泡酸蝕液。酸蝕液為酸性液體及雙氧水溶液之混合;酸性液體為硫酸,硝酸,磷酸,王水之擇一,酸性液體及雙氧水溶液混合比例為1:1~4:1,酸蝕液pH值:-0.20~1.30,溫度:25℃~45℃,浸泡約為5~30分鐘。 In step three, the conductive layer (copper layer) is subjected to an etching step to form an etching film. The etching step is an immersion of an acid etching solution. Acid etching liquid is a mixture of acidic liquid and hydrogen peroxide solution; acidic liquid is one of sulfuric acid, nitric acid, phosphoric acid and aqua regia. The mixing ratio of acidic liquid and hydrogen peroxide solution is 1: 1 ~ 4: 1, pH value of acid etching liquid: -0.20 ~ 1.30, temperature: 25 ℃ ~ 45 ℃, soak for about 5 ~ 30 minutes.

步驟四,該蝕刻膜的表面經一電鍍步驟析出一導電層;步驟四的電鍍步驟與步驟二的電鍍步驟相同;步驟五,重覆步驟三及步驟四至少一次。 In step 4, a conductive layer is deposited on the surface of the etching film through a plating step; the plating step in step 4 is the same as the plating step in step 2; and step 5 is repeated at least once in steps 3 and 4.

鈦陰極亮度計測(一)Titanium cathode brightness measurement (1)

如第一圖,圖中a、b、c三塊鈦陰極,a為經本發明步驟一、二處理後的鈦陰極表面圖像;b為經本發明步驟一至四處理後的鈦陰極表面;c為經本發明步驟一至五的鈦陰極表面圖像。a、b、c均以亮度計計測表面亮度,其中,a表面亮度為5.1~7.8,b表面亮度為100~146,c表面亮度為120~177。從圖面可知,a表面亮度低,無任何反射光影呈現。b表面有較高亮度,右下方呈現些微反射光影。c表面亮度高,下方有明顯的反射光影。從第一圖可證明,本發明步驟二至五具體增加了鈦陰極的表面亮度。 As shown in the first figure, a, b, and c are three titanium cathodes in the figure, a is an image of the surface of the titanium cathode after the steps 1 and 2 of the present invention; b is the surface of the titanium cathode after the steps 1 to 4 of the present invention; c is Surface images of the titanium cathode after steps 1 to 5 of the present invention. A, b, and c all measure the surface brightness with a brightness meter, among which a surface brightness is 5.1 to 7.8, b surface brightness is 100 to 146, and c surface brightness is 120 to 177. As can be seen from the figure, the surface a has a low brightness without any reflected light and shadow. b The surface has a high brightness, with slightly reflected light and shadow in the lower right. c. The surface has high brightness, and there is obvious reflected light and shadow below. It can be proved from the first figure that steps 2 to 5 of the present invention specifically increase the surface brightness of the titanium cathode.

鈦陰極亮度計測(二)Titanium cathode brightness measurement (2)

將第一實施例之方法所改質的鈦陰極表面以亮度計進行亮度測試,測定光的反射量表示亮度值。如第二圖,圖中有A、B、C、D四個鈦陰極,其中A、B、C、D均是以本發明第一實施例之方法所製備的,但A、B、C、D浸泡強酸液體的時間不同。A沒有浸泡強酸液體,B浸泡7小時、C浸泡14小時、D浸泡28小時。在亮度表現上,C、D鈦陰極的表面亮度分別為217、505,A、B的表面亮度分別為64、55。C、D鈦陰極的表面亮度顯著提昇。在第二圖中,另以A1、B1、C1、D1四個鈦陰極做對照,這四個鈦陰極均未經過本發明第一實施例的改質方法。基於比對考量,A1、B1、C1、D1與A、B、C、D都在0、7、14、28小時進行亮度計測。其中C1、D1的表面亮度為24、59,遠低於C、D鈦陰極的表面亮度。由此可證,本發明之方法確實提昇鈦陰極的表面亮度。 The surface of the titanium cathode modified by the method of the first embodiment is subjected to a brightness test with a brightness meter, and the measured light reflection amount represents a brightness value. As shown in the second figure, there are four titanium cathodes A, B, C, and D. Among them, A, B, C, and D are all prepared by the method of the first embodiment of the present invention, but A, B, C, and D. D. Soaking time of strong acid liquid is different. A was not soaked with a strong acid liquid, B was soaked for 7 hours, C was soaked for 14 hours, and D was soaked for 28 hours. In terms of brightness performance, the surface brightness of C and D titanium cathodes are 217, 505, and the surface brightness of A, B are 64, 55, respectively. The surface brightness of C and D titanium cathodes was significantly improved. In the second figure, four titanium cathodes A1, B1, C1, and D1 are used as a comparison. None of the four titanium cathodes has undergone the modification method of the first embodiment of the present invention. Based on comparison considerations, A1, B1, C1, D1 and A, B, C, and D were all measured for brightness at 0, 7, 14, and 28 hours. Among them, the surface brightness of C1 and D1 is 24 and 59, which is much lower than that of C and D titanium cathodes. It can be proved that the method of the present invention does improve the surface brightness of the titanium cathode.

本實施方式的亮度是做為評價鈦陰極表面粗糙度的指標,公知常識是,當表面粗糙度大,光的反射量變少,因此亮度值降低;反之,當表面粗糙度愈小,表面愈趨於平滑,則光的反射量變大,亮度值昇高。從第 一圖的實驗結果可證明,經本發明之改質方法使鈦陰極的表面亮度顯著提昇,意即鈦陰極的表面粗糙度顯著降低。當鈦陰極的表面粗糙度降低,由其所析出的生銅箔的表面粗糙度也跟著降低,利於生產光面(S面)為低粗糙度的生銅箔。 The brightness of this embodiment is used as an index for evaluating the surface roughness of the titanium cathode. It is common knowledge that when the surface roughness is large, the amount of light reflection decreases, so the brightness value decreases; conversely, when the surface roughness is smaller, the surface is more inclined With smoothing, the amount of light reflection increases and the brightness value increases. From the first The experimental results in a figure can prove that the surface brightness of the titanium cathode is significantly improved by the modification method of the present invention, which means that the surface roughness of the titanium cathode is significantly reduced. When the surface roughness of the titanium cathode is reduced, the surface roughness of the green copper foil precipitated therefrom is also reduced, which is beneficial to the production of green copper foil with a smooth surface (S surface) having a low roughness.

第二實施例Second embodiment

本發明鈦陰極表面改質方法,包括: The titanium cathode surface modification method of the invention comprises:

步驟一,鈦陰極表面以粗糙度至少1000的砂紙進行打磨,使鈦陰極表面成為經物理改質的表面。 In step one, the surface of the titanium cathode is polished with sandpaper having a roughness of at least 1000, so that the surface of the titanium cathode becomes a physically modified surface.

步驟二,鈦陰極經物理改質的表面經一電鍍步驟析出一導電層;該導電層為銅層。 In step two, a physically modified surface of the titanium cathode undergoes an electroplating step to precipitate a conductive layer; the conductive layer is a copper layer.

該電鍍步驟中採用的電鍍液組成分包含可溶性銅鹽、pH調整劑、以及添加劑。可溶性銅鹽,優選為硫酸銅五水化合物,145g/L~250g/L,優選為220g/L。pH調整劑,包含但不限於硝酸、鹽酸、硫酸、磷酸;優選為硫酸,濃度為3%~10%(V/V);pH為-0.20~1.30。添加劑:包含氯離子、加速劑、平整劑、抑制劑。其中,氯離子濃度為5~50ppm,優選為10ppm。加速劑選自硫醇類化合物,包含但不限於SPS(聚二硫二丙烷磺酸鈉)、MPS(3-巰基-1-丙烷磺酸鈉)、DPS(N,N-二甲基-二硫代羰基丙烷磺酸鈉)、ZPS(3-(苯駢噻唑-2-巰基)-丙烷磺酸鈉)、UPS(硫脲丙基硫酸鹽)之擇一;濃度為50-150ppm,優選為100ppm。平整劑選自有機含氮雜環化合物,包含但不限於JGB(Janus Green B)、DB(Diazine Black)、MV(Methylene Violet 3RAX)、SO(Safranine O)、ABPV(Alcian Blue Pyridine Variant)及BTA(Benzotriazole),濃度為5~100ppm,優選為10ppm。抑制劑選自聚乙二醇 (Polyethlene glycol,PEG),分子量3000~12000,濃度為50~300ppm,優選為200ppm。 The composition of the plating solution used in this plating step includes a soluble copper salt, a pH adjuster, and an additive. The soluble copper salt is preferably a copper sulfate pentahydrate, 145 g / L to 250 g / L, and preferably 220 g / L. The pH adjuster includes, but is not limited to, nitric acid, hydrochloric acid, sulfuric acid, and phosphoric acid; sulfuric acid is preferred; the concentration is 3% to 10% (V / V); and the pH is -0.20 to 1.30. Additives: Contains chloride ions, accelerators, levelling agents, inhibitors. Among them, the chloride ion concentration is 5 to 50 ppm, and preferably 10 ppm. The accelerator is selected from thiol compounds, including but not limited to SPS (sodium dithiodipropane sulfonate), MPS (sodium 3-mercapto-1-propane sulfonate), DPS (N, N-dimethyl-di- Alternatives to sodium thiocarbonylpropane sulfonate), ZPS (3- (benzothiothiazol-2-mercapto) -sodium propane sulfonate), UPS (thioureapropyl sulfate); concentration is 50-150ppm, preferably 100ppm. The leveling agent is selected from organic nitrogen-containing heterocyclic compounds, including but not limited to JGB (Janus Green B), DB (Diazine Black), MV (Methylene Violet 3RAX), SO (Safranine O), ABPV (Alcian Blue Pyridine Variant), and BTA (Benzotriazole) at a concentration of 5 to 100 ppm, preferably 10 ppm. Inhibitor selected from polyethylene glycol (Polyethlene glycol, PEG), molecular weight 3000 ~ 12000, concentration 50 ~ 300ppm, preferably 200ppm.

該電鍍步驟中採用不溶性陽極,材料可為鉑、氧化銥/鈦、氧化銥/五氧化二鉭/鈦。鍍液溫度為25~65℃、優選為30~40℃。電流密度:30~50ASD。銅液需攪拌,包含但不限空氣攪拌、馬達噴流攪拌、葉片攪拌。 An insoluble anode is used in the electroplating step, and the material may be platinum, iridium oxide / titanium, iridium oxide / tantalum pentoxide / titanium. The bath temperature is 25 to 65 ° C, preferably 30 to 40 ° C. Current density: 30 ~ 50ASD. The copper liquid needs to be stirred, including but not limited to air stirring, motor jet stirring, and blade stirring.

步驟三,將該導電層(銅層)經一蝕刻步驟而成為一蝕刻膜。蝕刻步驟為浸泡酸蝕液。酸蝕液為酸性液體及雙氧水溶液之混合;酸性液體為硫酸,硝酸,磷酸,王水之擇一,酸性液體及雙氧水溶液混合比例為1:1~4:1,酸蝕液pH值:-0.20~1.30,溫度:25℃~45℃,浸泡約為5~30分鐘。 In step three, the conductive layer (copper layer) is subjected to an etching step to form an etching film. The etching step is an immersion of an acid etching solution. Acid etching liquid is a mixture of acidic liquid and hydrogen peroxide solution; acidic liquid is one of sulfuric acid, nitric acid, phosphoric acid and aqua regia. The mixing ratio of acidic liquid and hydrogen peroxide solution is 1: 1 ~ 4: 1. 1.30, temperature: 25 ℃ ~ 45 ℃, soak for about 5 ~ 30 minutes.

步驟四,該蝕刻膜的表面經一電鍍步驟析出一導電層;步驟四的電鍍步驟與步驟二的電鍍步驟相同;步驟五,重覆步驟三及步驟四至少一次。 In step 4, a conductive layer is deposited on the surface of the etching film through a plating step; the plating step in step 4 is the same as the plating step in step 2; and step 5 is repeated at least once in steps 3 and 4.

鈦陰極表面粗糙度計測Surface roughness measurement of titanium cathode

第三圖,為第二實施例之方法所改質的鈦陰極表面1000倍SEM圖像。第四圖為第二實施例之方法所改質的鈦陰極表面以粗糙度計測儀量測之表面粗糙度(Ra)值。 The third figure is a 1000-times SEM image of the titanium cathode surface modified by the method of the second embodiment. The fourth figure shows the surface roughness (Ra) value of the surface of the titanium cathode modified by the method of the second embodiment measured by a roughness meter.

第三圖中W組為未經化學或物理改質的原始鈦陰極經三次鍍導電層(銅層);X、Y、Z組為鈦陰極表面分別以粗糙度180、1000、2500的砂紙打磨後再經三次電鍍導電層(銅層)。 In the third figure, group W is the original titanium cathode that has not been chemically or physically modified. The conductive layer (copper layer) has been plated three times. Groups X, Y, and Z are titanium cathodes whose surfaces are polished with sandpaper with a roughness of 180, 1000, and 2500, respectively After that, the conductive layer (copper layer) was plated three times.

配合第三、四圖,說明如下:W組:W1第一次鍍導電層(銅層)Ra值為0.862。W2第二次鍍導電層(銅層)Ra值為0.613。W3第三次鍍導電層(銅層)Ra值為0.412。 With the third and fourth figures, the description is as follows: Group W: The first Ra-plated conductive layer (copper layer) of W1 is 0.862. The Ra value of the second conductive layer (copper layer) of W2 was 0.613. The Ra value of the third conductive plating layer (copper layer) of W3 was 0.412.

X組:X1第一次鍍導電層(銅層)Ra值為0.773。X2第二次鍍導電層(銅層)Ra值為0.652。X3第三次鍍導電層(銅層)Ra值為0.449。 Group X: The Ra value of the first conductive layer (copper layer) of X1 is 0.773. The Ra value of the second conductive layer (copper layer) of X2 was 0.652. The Ra value of the third conductive plating layer (copper layer) of X3 was 0.449.

Y組:Y1第一次鍍導電層(銅層)Ra值為0.558。Y2第二次鍍導電層(銅層)Ra值為0.249。Y3第三次鍍導電層(銅層)Ra值為0.198。 Group Y: The Ra value of the first conductive layer (copper layer) of Y1 is 0.558. The Ra value of the second conductive layer (copper layer) of Y2 was 0.249. The third Ra plating value (copper layer) of Y3 was 0.198.

Z組:Z1第一次鍍導電層(銅層)Ra值為0.417。Z2第二次鍍導電層(銅層)Ra值為0.225。Z3第三次鍍導電層(銅層)Ra值為0.169。 Group Z: The Ra value of the first conductive layer (copper layer) of Z1 is 0.417. The Ra value of the second conductive layer (copper layer) of Z2 was 0.225. The Z3 third plating of the conductive layer (copper layer) has a Ra value of 0.169.

從上述W組可知,本發明的步驟二至步驟五實施於未經物理或化學改質的鈦陰極表面,仍然具有使鈦陰極表面粗糙度顯著降低的功能。 It can be known from the above-mentioned W group that steps 2 to 5 of the present invention are implemented on the surface of the titanium cathode without physical or chemical modification, and still have the function of significantly reducing the surface roughness of the titanium cathode.

從上述X、Y組、和Z組的Ra值計測結果可知,經本發明第二實施例的方法所改質的鈦陰極的表面粗糙度顯著降低。特別是Y組和Z組,當物理改質方法將鈦陰極表面打磨得愈細,再繼續施以本發明步驟二至步驟五,可獲得表面粗糙度更低的鈦陰極。鈦陰極的表面粗糙度降低,由其所析出的生銅箔的表面粗糙度也跟著降低,利於生產光面(S面)為低粗糙度的生銅箔。 From the Ra measurement results of the X, Y, and Z groups, it can be seen that the surface roughness of the titanium cathode modified by the method of the second embodiment of the present invention is significantly reduced. Especially for groups Y and Z, when the surface of the titanium cathode is polished finer by the physical modification method, and then the steps 2 to 5 of the present invention are continuously applied, a titanium cathode with a lower surface roughness can be obtained. The surface roughness of the titanium cathode is reduced, and the surface roughness of the green copper foil precipitated therefrom is also reduced, which is conducive to the production of a green copper foil with a smooth surface (S surface) having a low roughness.

從第四圖可進一步得知,本發明第二實施例從步驟二至步驟五對鈦陰極表面總共實施了三次鍍導電層(銅層)和兩次蝕刻步驟,每一次都顯著降低了鈦陰極的表面粗糙度。合於邏輯的推測是,實施愈多次的鍍導電層(銅層)和蝕刻步驟,可以使鈦陰極的表面粗糙度更降低。可按照產業的需求選擇適當的次數,控制鈦陰極的表面粗糙度以獲得符合產業要求的低粗糙度生銅箔。 As can be further seen from the fourth figure, the second embodiment of the present invention has performed a total of three conductive plating (copper layer) and two etching steps on the titanium cathode surface from step two to step five, each time significantly reducing the titanium cathode. Surface roughness. It is logically speculated that the surface roughness of the titanium cathode can be further reduced by implementing more conductive plating (copper layer) and etching steps. The appropriate number of times can be selected according to the needs of the industry, and the surface roughness of the titanium cathode can be controlled to obtain a low-roughness copper foil that meets the requirements of the industry.

Claims (3)

一種鈦陰極表面改質方法用於電鍍低粗糙度銅箔,包括:步驟一,鈦陰極表面接觸pH值為小於0或0~4的強酸液體14~28小時之後取出將其乾燥,鈦陰極表面為經化學改質的表面;步驟二,鈦陰極經化學改質的表面經一電鍍步驟析出一導電層;該導電層為銅層;步驟三,將該導電層經一蝕刻步驟而成為一蝕刻膜;該蝕刻步驟為浸泡酸蝕液,酸蝕液pH值為-0.20~1.30,浸泡時間為5~30分鐘;該酸蝕液為酸性液體及雙氧水溶液之混合;酸性液體為硫酸,硝酸,磷酸,王水之擇一,酸性液體及雙氧水溶液混合比例為1:1~4:1,溫度25℃~45℃;步驟四,該蝕刻膜的表面經一電鍍步驟析出一導電層;該導電層為銅層;步驟四的電鍍步驟與步驟二的電鍍步驟相同;步驟五,重覆步驟三及步驟四至少一次;步驟二及步驟四的電鍍步驟中採用的電鍍液組成分包含可溶性銅鹽、pH調整劑、以及添加劑;可溶性銅鹽優選為硫酸銅五水化合物145g/L~250g/L;pH調整劑是選自硝酸、鹽酸、硫酸、磷酸之擇一,濃度為3%~10%(V/V);pH值為-0.20~1.30;添加劑包含氯離子、加速劑、平整劑、及抑制劑;氯離子濃度為5~50ppm,加速劑選自硫醇類化合物,濃度為50~150ppm;平整劑選自有機含氮雜環化合物,濃度為5~100ppm;抑制劑選自聚乙二醇,濃度為50~300ppm;該電鍍步驟中採用不溶性陽極,鍍液溫度為25~65℃,電流密度30~50ASD,銅液攪拌。A method for modifying the surface of a titanium cathode for electroplating a low-roughness copper foil includes the following steps: Step 1. The surface of the titanium cathode is contacted with a strong acid liquid having a pH value of less than 0 or 0 to 4 after 14 to 28 hours to remove and dry the surface of the titanium cathode. Is a chemically modified surface; step two, a chemically modified surface of the titanium cathode precipitates a conductive layer through an electroplating step; the conductive layer is a copper layer; step three, the conductive layer is subjected to an etching step to become an etch Film; the etching step is to immerse the acid etching solution, the pH value of the acid etching solution is -0.20 to 1.30, and the immersion time is 5 to 30 minutes; the acid etching solution is a mixture of an acidic liquid and a hydrogen peroxide solution; the acidic liquid is sulfuric acid, nitric acid, One of phosphoric acid and aqua regia, the mixing ratio of the acidic liquid and the hydrogen peroxide solution is 1: 1 to 4: 1, and the temperature is 25 ° C to 45 ° C. Step four, the surface of the etching film is subjected to an electroplating step to precipitate a conductive layer; the conductive layer is Copper layer; The plating step in step 4 is the same as the plating step in step 2. Step 5, repeat steps 3 and 4 at least once. The plating solution used in the plating steps in steps 2 and 4 contains soluble copper salt and pH. Tune Agent and additive; soluble copper salt is preferably copper sulfate pentahydrate 145g / L ~ 250g / L; pH adjuster is selected from nitric acid, hydrochloric acid, sulfuric acid, phosphoric acid, and the concentration is 3% ~ 10% (V / V); pH value is -0.20 ~ 1.30; additives include chloride ion, accelerator, leveler, and inhibitor; chloride ion concentration is 5 ~ 50ppm, accelerator is selected from thiol compounds, concentration is 50 ~ 150ppm; leveling The agent is selected from organic nitrogen-containing heterocyclic compounds at a concentration of 5 to 100 ppm; the inhibitor is selected from polyethylene glycol at a concentration of 50 to 300 ppm; an insoluble anode is used in this plating step, the bath temperature is 25 to 65 ° C, and the current density 30 ~ 50ASD, stir copper solution. 一種鈦陰極表面改質方法用於電鍍低粗糙度銅箔,包括:步驟一,鈦陰極表面以粗糙度至少1000的砂紙進行打磨,使鈦陰極表面成為經物理改質的表面;步驟二,鈦陰極經物理改質的表面經一電鍍步驟析出一導電層;該導電層為銅層;步驟三,將該導電層經一蝕刻步驟而成為一蝕刻膜;該蝕刻步驟為浸泡酸蝕液,酸蝕液pH值:-0.20~1.30,浸泡時間為5~30分鐘;該酸蝕液為酸性液體及雙氧水溶液之混合;酸性液體為硫酸,硝酸,磷酸,王水之擇一,酸性液體及雙氧水溶液混合比例為1:1~4:1,溫度25℃~45℃;步驟四,該蝕刻膜的表面經一電鍍步驟析出一導電層;該導電層為銅層;步驟四的電鍍步驟與步驟二的電鍍步驟相同;步驟五,重覆步驟三及步驟四至少一次;步驟二及步驟四的電鍍步驟中採用的電鍍液組成分包含可溶性銅鹽、pH調整劑、以及添加劑;可溶性銅鹽優選為硫酸銅五水化合物145g/L~250g/L;pH調整劑是選自硝酸、鹽酸、硫酸、磷酸之擇一,濃度為3%~10%(V/V);pH值為-0.20~1.30;添加劑包含氯離子、加速劑、平整劑、及抑制劑;氯離子濃度為5~50ppm,加速劑選自硫醇類化合物,濃度為50~150ppm;平整劑選自有機含氮雜環化合物,濃度為5~100ppm;抑制劑選自聚乙二醇,濃度為50~300ppm;該電鍍步驟中採用不溶性陽極,鍍液溫度為25~65℃,電流密度30~50ASD,銅液攪拌。A method for modifying the surface of a titanium cathode for electroplating a low-roughness copper foil includes the following steps. The titanium cathode surface is polished with sandpaper having a roughness of at least 1000, so that the surface of the titanium cathode becomes a physically modified surface. Step two: titanium The conductively modified surface of the cathode precipitates a conductive layer through an electroplating step; the conductive layer is a copper layer; step three, the conductive layer is subjected to an etching step to form an etching film; the etching step is an immersion of an acid etching solution, acid Etching solution pH: -0.20 ~ 1.30, soaking time is 5 ~ 30 minutes; the acid etching solution is a mixture of acidic liquid and hydrogen peroxide solution; the acidic liquid is one of sulfuric acid, nitric acid, phosphoric acid and aqua regia; The ratio is 1: 1 to 4: 1, and the temperature is 25 ° C to 45 ° C. Step 4, the surface of the etching film is subjected to a plating step to precipitate a conductive layer; the conductive layer is a copper layer; The plating steps are the same; step 5, repeat steps 3 and 4 at least once; the composition of the plating solution used in the plating steps of steps 2 and 4 includes soluble copper salt, pH adjuster, and additives; The soluble copper salt is preferably copper sulfate pentahydrate 145g / L ~ 250g / L; the pH adjuster is selected from nitric acid, hydrochloric acid, sulfuric acid, and phosphoric acid, and the concentration is 3% to 10% (V / V); pH value It is -0.20 ~ 1.30; the additives include chloride ion, accelerator, leveler, and inhibitor; the chloride ion concentration is 5-50ppm, the accelerator is selected from thiol compounds, and the concentration is 50 ~ 150ppm; the leveler is selected from organic ingredients A nitrogen heterocyclic compound with a concentration of 5 to 100 ppm; the inhibitor is selected from polyethylene glycol with a concentration of 50 to 300 ppm; an insoluble anode is used in this plating step, the bath temperature is 25 to 65 ° C, the current density is 30 to 50 ASD, copper Liquid stirring. 一種鈦陰極表面改質方法用於電鍍低粗糙度銅箔,包括:步驟一,備一表面未經化學或物理改質的鈦陰極;步驟二,鈦陰極的表面經一電鍍步驟析出一導電層;該導電層為銅層;步驟三,將該導電層經一蝕刻步驟而成為一蝕刻膜;該蝕刻步驟為浸泡酸蝕液,酸蝕液pH值:-0.20~1.30,浸泡時間為5~30分鐘;該酸蝕液為酸性液體及雙氧水溶液之混合;酸性液體為硫酸,硝酸,磷酸,王水之擇一,酸性液體及雙氧水溶液混合比例為1:1~4:1,溫度25℃~45℃;步驟四,該蝕刻膜的表面經一電鍍步驟析出一導電層;該導電層為銅層;步驟四的電鍍步驟與步驟二的電鍍步驟相同;步驟五,重覆步驟三及步驟四至少一次;步驟二及步驟四的電鍍步驟中採用的電鍍液組成分包含可溶性銅鹽、pH調整劑、以及添加劑;可溶性銅鹽優選為硫酸銅五水化合物145g/L~250g/L;pH調整劑是選自硝酸、鹽酸、硫酸、磷酸之擇一,濃度為3%~10%(V/V);pH值為-0.20~1.30;添加劑包含氯離子、加速劑、平整劑、及抑制劑;氯離子濃度為5~50ppm,加速劑選自硫醇類化合物,濃度為50~150ppm;平整劑選自有機含氮雜環化合物,濃度為5~100ppm;抑制劑選自聚乙二醇,濃度為50~300ppm;該電鍍步驟中採用不溶性陽極,鍍液溫度為25~65℃,電流密度30~50ASD,銅液攪拌。A titanium cathode surface modification method for electroplating a low-roughness copper foil includes the following steps: preparing a titanium cathode without chemical or physical modification on the surface; and step two, depositing a conductive layer on the surface of the titanium cathode through a plating step The conductive layer is a copper layer; step three, the conductive layer is subjected to an etching step to form an etching film; the etching step is an immersion acid etching solution, the pH value of the acid etching solution is -0.20 to 1.30, and the immersion time is 5 to 30 minutes; the acid etching solution is a mixture of acidic liquid and hydrogen peroxide solution; the acidic liquid is one of sulfuric acid, nitric acid, phosphoric acid and aqua regia; the mixing ratio of acidic liquid and hydrogen peroxide solution is 1: 1 ~ 4: 1, temperature is 25 ℃ ~ 45 ℃; step four, a conductive layer is deposited on the surface of the etching film through a plating step; the conductive layer is a copper layer; the plating step of step four is the same as the plating step of step two; step five, repeating steps three and four at least Once; the composition of the plating solution used in the plating steps of steps 2 and 4 includes a soluble copper salt, a pH adjusting agent, and an additive; the soluble copper salt is preferably a copper sulfate pentahydrate 145 g / L to 250 g / L; a pH adjusting agent It is selected from the group consisting of nitric acid, hydrochloric acid, sulfuric acid, and phosphoric acid with a concentration of 3% to 10% (V / V); the pH value is -0.20 to 1.30; the additives include chloride ion, accelerator, leveler, and inhibitor; The chloride ion concentration is 5 ~ 50ppm, the accelerator is selected from thiol compounds and the concentration is 50 ~ 150ppm; the leveling agent is selected from organic nitrogen-containing heterocyclic compounds, the concentration is 5 ~ 100ppm; the inhibitor is selected from polyethylene glycol, the concentration 50 ~ 300ppm; insoluble anode is used in this electroplating step, bath temperature is 25 ~ 65 ℃, current density is 30 ~ 50ASD, copper bath is stirred.
TW107119717A 2018-06-07 2018-06-07 Titanium cathode surface modification method for electroplating low-roughness copper foil TWI679316B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW107119717A TWI679316B (en) 2018-06-07 2018-06-07 Titanium cathode surface modification method for electroplating low-roughness copper foil

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW107119717A TWI679316B (en) 2018-06-07 2018-06-07 Titanium cathode surface modification method for electroplating low-roughness copper foil

Publications (2)

Publication Number Publication Date
TWI679316B true TWI679316B (en) 2019-12-11
TW202001007A TW202001007A (en) 2020-01-01

Family

ID=69582304

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107119717A TWI679316B (en) 2018-06-07 2018-06-07 Titanium cathode surface modification method for electroplating low-roughness copper foil

Country Status (1)

Country Link
TW (1) TWI679316B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115369455A (en) * 2022-08-25 2022-11-22 广东腐蚀科学与技术创新研究院 Copper foil and production equipment and production method thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101122035A (en) * 2006-08-11 2008-02-13 财团法人工业技术研究院 Method for manufacturing copper foil
CN102762777A (en) * 2009-12-04 2012-10-31 三井金属矿业株式会社 Porous metal foil and method for manufacturing the same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101122035A (en) * 2006-08-11 2008-02-13 财团法人工业技术研究院 Method for manufacturing copper foil
CN102762777A (en) * 2009-12-04 2012-10-31 三井金属矿业株式会社 Porous metal foil and method for manufacturing the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115369455A (en) * 2022-08-25 2022-11-22 广东腐蚀科学与技术创新研究院 Copper foil and production equipment and production method thereof

Also Published As

Publication number Publication date
TW202001007A (en) 2020-01-01

Similar Documents

Publication Publication Date Title
JP6496755B2 (en) Low internal stress copper electroplating method
CN108728874B (en) Electrolytic copper foil with low bounce, manufacturing method and application thereof
KR101449342B1 (en) Electrolytic copper foil, electric component and battery comprising the foil
KR100618722B1 (en) Electro deposition chemistry
JP4709575B2 (en) Copper foil roughening treatment method and roughening treatment liquid
CN1358409A (en) Surface treated copper foil and method for preparing the same and copper-clad laminate using the same
JP3124523B2 (en) Copper plating method
JP3250994B2 (en) Electrolytic copper foil
TWI679316B (en) Titanium cathode surface modification method for electroplating low-roughness copper foil
TWI412631B (en) Copper plating solution for embedding ULSI (Ultra Large-Scale Integration) micro copper wiring
TW202014067A (en) Copper-coated laminate capable of making surface of copper-plated film being smooth after chemical polishing
JP5795059B2 (en) Etching method of copper and copper alloy
JP6949301B2 (en) Plating film manufacturing method
US11979983B2 (en) Printed wiring board and method of manufacturing the same
CN112030199B (en) High-speed electro-coppering additive for advanced packaging and electroplating solution
KR102293664B1 (en) Composition for nickel-phosphorus alloy plating
KR101502373B1 (en) Electrolytic copper foil, electric component and battery comprising the foil
JP4472673B2 (en) Manufacturing method of copper wiring and electrolytic solution for copper plating
TW202012173A (en) Copper-clad laminate including a high-chlorine concentration layer containing chlorine as an impurity
TWI643982B (en) Electrolytic copper foil, electric component and battery comprising the foil
TW202336283A (en) Electrolytic copper foil with high elongation and high strength characteristic
JP2021042442A (en) Copper-clad laminate and method for manufacturing the same
SG2012066940A (en) Low internal stress copper electroplating method
JP2024511276A (en) Electrolytes and methods for cobalt electrodeposition
WO2016208340A1 (en) Electrolytic hard gold plating solution substitution inhibitor and electrolytic hard gold plating solution including same