JP6623632B2 - Insulating resin film and multilayer printed wiring board - Google Patents
Insulating resin film and multilayer printed wiring board Download PDFInfo
- Publication number
- JP6623632B2 JP6623632B2 JP2015179972A JP2015179972A JP6623632B2 JP 6623632 B2 JP6623632 B2 JP 6623632B2 JP 2015179972 A JP2015179972 A JP 2015179972A JP 2015179972 A JP2015179972 A JP 2015179972A JP 6623632 B2 JP6623632 B2 JP 6623632B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- inorganic filler
- resin film
- insulating resin
- thermosetting resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
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- 229920005989 resin Polymers 0.000 title claims description 152
- 239000011347 resin Substances 0.000 title claims description 152
- 229920001187 thermosetting polymer Polymers 0.000 claims description 88
- 239000011342 resin composition Substances 0.000 claims description 72
- 239000011256 inorganic filler Substances 0.000 claims description 70
- 229910003475 inorganic filler Inorganic materials 0.000 claims description 70
- 239000003822 epoxy resin Substances 0.000 claims description 46
- 229920000647 polyepoxide Polymers 0.000 claims description 46
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 41
- 229920003986 novolac Polymers 0.000 claims description 26
- 239000003795 chemical substances by application Substances 0.000 claims description 19
- 239000007787 solid Substances 0.000 claims description 18
- 239000000377 silicon dioxide Substances 0.000 claims description 17
- 239000006087 Silane Coupling Agent Substances 0.000 claims description 12
- 239000002245 particle Substances 0.000 claims description 12
- 239000011521 glass Substances 0.000 claims description 11
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N phenylbenzene Natural products C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 claims description 10
- 239000004305 biphenyl Substances 0.000 claims description 8
- 235000010290 biphenyl Nutrition 0.000 claims description 8
- LTPBRCUWZOMYOC-UHFFFAOYSA-N Beryllium oxide Chemical compound O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 claims description 6
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 claims description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 6
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 claims description 6
- PPQREHKVAOVYBT-UHFFFAOYSA-H dialuminum;tricarbonate Chemical compound [Al+3].[Al+3].[O-]C([O-])=O.[O-]C([O-])=O.[O-]C([O-])=O PPQREHKVAOVYBT-UHFFFAOYSA-H 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- 239000005995 Aluminium silicate Substances 0.000 claims description 3
- 229910052582 BN Inorganic materials 0.000 claims description 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 3
- YKTSYUJCYHOUJP-UHFFFAOYSA-N [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] Chemical compound [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] YKTSYUJCYHOUJP-UHFFFAOYSA-N 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 235000012211 aluminium silicate Nutrition 0.000 claims description 3
- 229940118662 aluminum carbonate Drugs 0.000 claims description 3
- OJMOMXZKOWKUTA-UHFFFAOYSA-N aluminum;borate Chemical compound [Al+3].[O-]B([O-])[O-] OJMOMXZKOWKUTA-UHFFFAOYSA-N 0.000 claims description 3
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims description 3
- 229910002113 barium titanate Inorganic materials 0.000 claims description 3
- 239000011324 bead Substances 0.000 claims description 3
- 229910001593 boehmite Inorganic materials 0.000 claims description 3
- 229910000019 calcium carbonate Inorganic materials 0.000 claims description 3
- 239000000378 calcium silicate Substances 0.000 claims description 3
- 229910052918 calcium silicate Inorganic materials 0.000 claims description 3
- OYACROKNLOSFPA-UHFFFAOYSA-N calcium;dioxido(oxo)silane Chemical compound [Ca+2].[O-][Si]([O-])=O OYACROKNLOSFPA-UHFFFAOYSA-N 0.000 claims description 3
- 239000004927 clay Substances 0.000 claims description 3
- NJLLQSBAHIKGKF-UHFFFAOYSA-N dipotassium dioxido(oxo)titanium Chemical compound [K+].[K+].[O-][Ti]([O-])=O NJLLQSBAHIKGKF-UHFFFAOYSA-N 0.000 claims description 3
- 239000003365 glass fiber Substances 0.000 claims description 3
- FAHBNUUHRFUEAI-UHFFFAOYSA-M hydroxidooxidoaluminium Chemical compound O[Al]=O FAHBNUUHRFUEAI-UHFFFAOYSA-M 0.000 claims description 3
- NLYAJNPCOHFWQQ-UHFFFAOYSA-N kaolin Chemical compound O.O.O=[Al]O[Si](=O)O[Si](=O)O[Al]=O NLYAJNPCOHFWQQ-UHFFFAOYSA-N 0.000 claims description 3
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 claims description 3
- 239000000347 magnesium hydroxide Substances 0.000 claims description 3
- 229910001862 magnesium hydroxide Inorganic materials 0.000 claims description 3
- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 claims description 3
- 239000000391 magnesium silicate Substances 0.000 claims description 3
- 229910052919 magnesium silicate Inorganic materials 0.000 claims description 3
- 235000019792 magnesium silicate Nutrition 0.000 claims description 3
- 239000010445 mica Substances 0.000 claims description 3
- 229910052618 mica group Inorganic materials 0.000 claims description 3
- 239000000843 powder Substances 0.000 claims description 3
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 claims description 3
- 239000000454 talc Substances 0.000 claims description 3
- 229910052623 talc Inorganic materials 0.000 claims description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 3
- BIKXLKXABVUSMH-UHFFFAOYSA-N trizinc;diborate Chemical compound [Zn+2].[Zn+2].[Zn+2].[O-]B([O-])[O-].[O-]B([O-])[O-] BIKXLKXABVUSMH-UHFFFAOYSA-N 0.000 claims description 3
- 239000011787 zinc oxide Substances 0.000 claims description 3
- BNEMLSQAJOPTGK-UHFFFAOYSA-N zinc;dioxido(oxo)tin Chemical compound [Zn+2].[O-][Sn]([O-])=O BNEMLSQAJOPTGK-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 claims description 2
- 229910052570 clay Inorganic materials 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims 1
- 229910052791 calcium Inorganic materials 0.000 claims 1
- 239000011575 calcium Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 156
- 239000000758 substrate Substances 0.000 description 39
- 238000000034 method Methods 0.000 description 38
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 30
- 239000004020 conductor Substances 0.000 description 24
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 20
- -1 for example Polymers 0.000 description 20
- 239000005011 phenolic resin Substances 0.000 description 20
- 239000007822 coupling agent Substances 0.000 description 17
- 239000000853 adhesive Substances 0.000 description 16
- 230000001070 adhesive effect Effects 0.000 description 16
- 238000004519 manufacturing process Methods 0.000 description 16
- 230000003746 surface roughness Effects 0.000 description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 16
- 239000000243 solution Substances 0.000 description 12
- 229920002799 BoPET Polymers 0.000 description 11
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 11
- 238000011156 evaluation Methods 0.000 description 11
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 11
- 150000001875 compounds Chemical class 0.000 description 10
- 239000003960 organic solvent Substances 0.000 description 10
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 10
- 238000002360 preparation method Methods 0.000 description 10
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 9
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 9
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 9
- 239000007983 Tris buffer Substances 0.000 description 9
- 239000004593 Epoxy Substances 0.000 description 7
- 239000010949 copper Substances 0.000 description 7
- 238000001035 drying Methods 0.000 description 7
- 239000011229 interlayer Substances 0.000 description 7
- 239000007788 liquid Substances 0.000 description 7
- 239000011259 mixed solution Substances 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 6
- 239000003063 flame retardant Substances 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 239000000047 product Substances 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 5
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 5
- 238000007772 electroless plating Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 238000007747 plating Methods 0.000 description 5
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- 238000005406 washing Methods 0.000 description 5
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 238000007259 addition reaction Methods 0.000 description 4
- 150000001412 amines Chemical class 0.000 description 4
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 4
- 239000003963 antioxidant agent Substances 0.000 description 4
- 230000003078 antioxidant effect Effects 0.000 description 4
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 239000011889 copper foil Substances 0.000 description 4
- XLJMAIOERFSOGZ-UHFFFAOYSA-M cyanate Chemical compound [O-]C#N XLJMAIOERFSOGZ-UHFFFAOYSA-M 0.000 description 4
- 125000003700 epoxy group Chemical group 0.000 description 4
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- 229910052751 metal Inorganic materials 0.000 description 4
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- YRHRIQCWCFGUEQ-UHFFFAOYSA-N thioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3SC2=C1 YRHRIQCWCFGUEQ-UHFFFAOYSA-N 0.000 description 1
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Description
本発明は、絶縁樹脂フィルム及び多層プリント配線板に関する。 The present invention relates to an insulating resin film and a multilayer printed wiring board.
導体回路を有する構造体の一つであるプリント配線板は、コア基板上に複数の配線層が形成されたものであり、コア基板となる銅張積層体と、各配線層間に設けられる層間絶縁材と、最表面に設けられるソルダーレジストとを備えている。プリント配線板上には、通常、ダイボンディング材又はアンダーフィル材を介して半導体素子が実装される。必要に応じて、トランスファー封止材によって全面封止される場合もあり、また、放熱性の向上を目的とした金属キャップ(蓋)が装着される場合もある。
近年、半導体装置の軽薄短小化は留まるところを知らず、半導体素子や多層プリント配線板のさらなる高密度化が進んでいる。また、半導体装置の上に半導体装置を積むパッケージ・オン・パッケージといった実装形態も盛んに行われており、今後、半導体装置の実装密度は一段と高くなると予想される。
A printed wiring board, which is one of the structures having a conductive circuit, has a plurality of wiring layers formed on a core substrate, and a copper-clad laminate serving as a core substrate and an interlayer insulating layer provided between each wiring layer. And a solder resist provided on the outermost surface. A semiconductor element is usually mounted on a printed wiring board via a die bonding material or an underfill material. If necessary, the entire surface may be sealed with a transfer sealing material, or a metal cap (lid) for improving heat dissipation may be attached.
2. Description of the Related Art In recent years, lightening, thinning and miniaturization of semiconductor devices have been unavoidable, and the density of semiconductor elements and multilayer printed wiring boards has been further increased. In addition, mounting forms such as package-on-package, in which a semiconductor device is stacked on a semiconductor device, are also being actively performed, and it is expected that the mounting density of the semiconductor device will be further increased in the future.
ここで、従来の多層プリント配線板の製造方法を図1に示す。図1(f)に示す多層プリント配線板100は、表面及び内部に配線パターンを有する。多層プリント配線板100は、銅張積層体、層間絶縁材及び金属箔等を積層すると共に、エッチング法又はセミアディティブ法によって配線パターンを適宜形成することによって得られる。 Here, a conventional method for manufacturing a multilayer printed wiring board is shown in FIG. The multilayer printed wiring board 100 shown in FIG. 1F has a wiring pattern on the surface and inside. The multilayer printed wiring board 100 is obtained by laminating a copper-clad laminate, an interlayer insulating material, a metal foil, and the like, and appropriately forming a wiring pattern by an etching method or a semi-additive method.
まず、表面に配線パターン102を有する銅張積層体101の両面に層間絶縁層103を形成する(図1(a)参照)。層間絶縁層103は、熱硬化性樹脂組成物をスクリーン印刷機又はロールコータを用いて印刷してもよいし、熱硬化性樹脂組成物からなるフィルムを予め準備し、ラミネータを用いて、このフィルムをプリント配線板の表面に貼り付けることもできる。次いで、外部と電気的に接続することが必要な箇所に、YAGレーザ又は炭酸ガスレーザを用いて開口104を形成し、開口104周辺のスミア(残渣)をデスミア処理により除去する(図1(b)参照)。次いで、無電解めっき法によりシード層105を形成する(図1(c)参照)。上記シード層105上に感光性樹脂組成物をラミネートし、所定の箇所を露光及び現像処理して感光性樹脂層のパターン106を形成する(図1(d)参照)。次いで、電解めっき法により配線パターン107を形成し、はく離液により感光性樹脂組成物の硬化物を除去した後、上記シード層105をエッチングにより除去する(図1(e)参照)。以上を繰り返し行い、最表面にソルダーレジスト108を形成することで多層プリント配線板100を製造することができる(図1(f)参照)。このようにして得られた多層プリント配線板100は、対応する箇所に半導体素子が実装され、電気的な接続を確保することが可能である。 First, an interlayer insulating layer 103 is formed on both surfaces of a copper-clad laminate 101 having a wiring pattern 102 on the surface (see FIG. 1A). The interlayer insulating layer 103 may be printed with a thermosetting resin composition using a screen printer or a roll coater, or a film made of the thermosetting resin composition is prepared in advance, and the film is formed using a laminator. Can be attached to the surface of the printed wiring board. Next, an opening 104 is formed in a portion that needs to be electrically connected to the outside by using a YAG laser or a carbon dioxide laser, and smear (residue) around the opening 104 is removed by desmear treatment (FIG. 1B). reference). Next, a seed layer 105 is formed by an electroless plating method (see FIG. 1C). A photosensitive resin composition is laminated on the seed layer 105, and a predetermined portion is exposed and developed to form a pattern 106 of the photosensitive resin layer (see FIG. 1D). Next, a wiring pattern 107 is formed by an electrolytic plating method, and after the cured product of the photosensitive resin composition is removed by peeling liquid, the seed layer 105 is removed by etching (see FIG. 1E). By repeating the above and forming the solder resist 108 on the outermost surface, the multilayer printed wiring board 100 can be manufactured (see FIG. 1F). In the multilayer printed wiring board 100 thus obtained, a semiconductor element is mounted at a corresponding portion, and electrical connection can be ensured.
ところで、多層プリント配線板の層間絶縁層には、上下の配線層を電気的に接続するためのビア(開口)を設ける必要がある。多層プリント配線板上に実装されるフリップチップのピン数が増加すれば、そのピン数に対応する開口を設ける必要がある。従来の多層プリント配線板は実装密度が低く、また、実装する半導体素子のピン数も数千ピンから一万ピン前後の設計となっているため、開口を小径で狭ピッチなものとする必要性はなかった。しかし、半導体素子の微細化が進展し、ピン数が数万ピンから数十万ピンに増加するに従って、多層プリント配線板の層間絶縁層に形成する開口も半導体素子のピン数に合わせて、狭小化する必要性が高まっている。
これまで、熱硬化性樹脂組成物を用いた層間絶縁層へレーザにより開口を設けた多層プリント配線板の開発が進められてきた(例えば、特許文献1〜4参照)。しかし、図1に示す方法で製造された多層プリント配線板100は、レーザ等の新規な設備導入が必要であること、比較的大きな開口又は60μm以下の微小な開口を設けることが困難であること、開口径に合わせて使用するレーザを使い分ける必要があること、特殊な形状を設けることが困難であること等の問題がある。また、レーザを用いて開口を形成する場合、各開口を一つずつ形成しなければならないため、多数の微細な開口を設ける必要がある場合に時間が掛かることや、開口部周辺に樹脂の残渣が残るため、残渣を除去しない限り、得られる多層プリント配線板の信頼性が低下することといった問題もある。
そこで、上述した問題を解決するために、レーザを用いずに開口を設ける方法として、感光性樹脂組成物を用いる方法が提案されている(例えば、特許文献5参照)。
Incidentally, it is necessary to provide a via (opening) for electrically connecting the upper and lower wiring layers in the interlayer insulating layer of the multilayer printed wiring board. If the number of pins of the flip chip mounted on the multilayer printed wiring board increases, it is necessary to provide an opening corresponding to the number of pins. Conventional multilayer printed wiring boards have a low mounting density, and the number of pins on the semiconductor element to be mounted is designed to be in the range of thousands to 10,000 pins. There was no. However, as the miniaturization of semiconductor elements progresses and the number of pins increases from tens of thousands of pins to hundreds of thousands of pins, the openings formed in the interlayer insulating layer of the multilayer printed wiring board also become narrower in accordance with the number of pins of the semiconductor elements. There is a growing need to convert.
Hitherto, development of a multilayer printed wiring board in which an opening is provided by a laser in an interlayer insulating layer using a thermosetting resin composition has been advanced (for example, see Patent Documents 1 to 4). However, the multilayer printed wiring board 100 manufactured by the method shown in FIG. 1 requires the introduction of new equipment such as a laser, and it is difficult to provide a relatively large opening or a minute opening of 60 μm or less. In addition, there are problems such as that it is necessary to use different lasers according to the aperture diameter, and it is difficult to provide a special shape. In addition, when forming an opening using a laser, since each opening must be formed one by one, it takes time when a large number of fine openings need to be provided, and there is a residue of resin around the opening. Therefore, there is also a problem that the reliability of the obtained multilayer printed wiring board is reduced unless the residue is removed.
In order to solve the above-mentioned problem, a method using a photosensitive resin composition has been proposed as a method for providing an opening without using a laser (for example, see Patent Document 5).
特許文献5に記載の方法では、絶縁樹脂フィルムを積層後、感光性樹脂層を熱硬化性樹脂層から露出させるための頭出し工程と、露出した感光性樹脂層を除去する工程とを含むため、従来の配線板工程に用いられている粗化工程と比較して、絶縁層の膜厚減少量が大きくなる。そのため、従来の絶縁樹脂フィルムを用いた場合、膜厚減少量が多くなるほどフィルム中の無機充填材が露出及び/又は脱落するために表面粗さが大きくなり、その結果、導体層との接着強度が低下して、微細配線が困難となる。そこで、表面粗さを小さくし、導体層との接着強度を向上するために、熱硬化性樹脂層中の無機充填材の含有量を低減する手法を用いた場合、絶縁樹脂フィルムの熱膨張率が増加してしまうため、基板の薄型化に対応するのが困難であった。
そこで、本発明の課題は、低熱膨張率でありながら低表面粗さで導体層との高い接着強度を発現する絶縁樹脂フィルム、及び該絶縁樹脂フィルムを含有する多層プリント配線板を提供することにある。
Since the method described in Patent Document 5 includes a step of exposing the photosensitive resin layer from the thermosetting resin layer after the lamination of the insulating resin film, and a step of removing the exposed photosensitive resin layer. In addition, as compared with the roughening process used in the conventional wiring board process, the amount of reduction in the thickness of the insulating layer is increased. Therefore, when a conventional insulating resin film is used, as the amount of reduction in film thickness increases, the inorganic filler in the film is exposed and / or falls off, so that the surface roughness increases, and as a result, the adhesive strength to the conductor layer increases. And fine wiring becomes difficult. Therefore, when using a method of reducing the content of the inorganic filler in the thermosetting resin layer to reduce the surface roughness and improve the adhesive strength with the conductor layer, the thermal expansion coefficient of the insulating resin film is reduced. Therefore, it has been difficult to cope with the thinning of the substrate.
Therefore, an object of the present invention is to provide an insulating resin film that exhibits high adhesive strength to a conductor layer with low surface roughness while having a low coefficient of thermal expansion, and to provide a multilayer printed wiring board containing the insulating resin film. is there.
本発明者らは、上記の課題を解決すべく鋭意研究した結果、無機充填材の含有量を特定の範囲とした第一層と、無機充填材の含有量を特定の範囲とした第二層を前記第一層上に有する絶縁樹脂フィルムであれば上記の課題を解決し得ることを見出し、本発明を完成するに至った。本発明は、係る知見に基づいて完成したものである。 The present inventors have conducted intensive studies to solve the above problems, and as a result, a first layer having a specific range of the content of the inorganic filler and a second layer having a specific range of the content of the inorganic filler. It has been found that the above-mentioned problems can be solved by using an insulating resin film having the above on the first layer, and the present invention has been completed. The present invention has been completed based on such findings.
本発明は下記[1]〜[10]に関する。
[1](A1)熱硬化性樹脂、(B1)硬化剤、(C1)硬化促進剤及び(D1)無機充填材を含有してなる熱硬化性樹脂組成物(1)であって、該熱硬化性樹脂組成物(1)の固形分に対する(D1)無機充填材の含有量が1〜40質量%である熱硬化性樹脂組成物(1)を含有してなる第一層、及び
(A2)熱硬化性樹脂、(B2)硬化剤、(C2)硬化促進剤及び(D2)無機充填材を含有してなる熱硬化性樹脂組成物(2)であって、該熱硬化性樹脂組成物(2)の固形分に対する(D2)無機充填材の含有量が50〜80質量%である熱硬化性樹脂組成物(2)を含有してなる第二層を前記第一層上に形成してなる、絶縁樹脂フィルム。
[2]第一層と第二層の全体の膜厚が10〜100μmであり、且つ第一層の膜厚の割合が、第一層と第二層の全体の膜厚に対して10〜80%である、上記[1]に記載の絶縁樹脂フィルム。
[3](A1)熱硬化性樹脂がエポキシ樹脂である、上記[1]又は[2]に記載の絶縁樹脂フィルム。
[4](D1)無機充填材及び(D2)無機充填材が、それぞれ独立に、シリカ、アルミナ、硫酸バリウム、タルク、マイカ、カオリン、ベーマイト、ベリリア、チタン酸バリウム、チタン酸カリウム、チタン酸ストロンチウム、チタン酸カルシウム、炭酸アルミニウム、水酸化マグネシウム、水酸化アルミニウム、ホウ酸アルミニウム、ケイ酸アルミニウム、炭酸カルシウム、ケイ酸カルシウム、ケイ酸マグネシウム、ホウ酸亜鉛、スズ酸亜鉛、酸化亜鉛、酸化チタン、炭化ケイ素、窒化ケイ素、窒化ホウ素、クレー、ガラス短繊維、ガラス粉及び中空ガラスビーズからなる群から選択される少なくとも1種である、上記[1]〜[3]のいずれかに記載の絶縁樹脂フィルム。
[5](D1)無機充填材及び(D2)無機充填材の体積平均粒子径が、いずれも0.01〜3μmである、上記[1]〜[4]のいずれかに記載の絶縁樹脂フィルム。
[6](D1)無機充填材及び(D2)無機充填材が、いずれもシランカップリング剤で表面処理された無機充填材である、上記[1]〜[5]のいずれかに記載の絶縁樹脂フィルム。
[7]第一層において、第二層を有さない面に支持体を有する、上記[1]〜[6]のいずれか1項に記載の絶縁樹脂フィルム。
[8](A)熱硬化性樹脂、(B)硬化剤、(C)硬化促進剤及び(D)無機充填材を含有してなる絶縁樹脂フィルムであって、該絶縁樹脂フィルムの厚み方向の中央から下方を下層とし、中央から上方を上層としたとき、下層中の(D)無機充填材の含有量が1〜40質量%であり、且つ上層中の(D)無機充填材の含有量が50〜80質量%である絶縁樹脂フィルム。
[9]下層側の面に支持体を有する、上記[8]に記載の絶縁樹脂フィルム。
[10]上記[1]〜[9]のいずれかに記載の絶縁樹脂フィルムを含有する多層プリント配線板。
The present invention relates to the following [1] to [10].
[1] A thermosetting resin composition (1) containing (A1) a thermosetting resin, (B1) a curing agent, (C1) a curing accelerator, and (D1) an inorganic filler. (A2) a first layer containing the thermosetting resin composition (1) in which the content of the inorganic filler (D1) is 1 to 40% by mass based on the solid content of the curable resin composition (1); A) a thermosetting resin composition comprising a thermosetting resin, (B2) a curing agent, (C2) a curing accelerator, and (D2) an inorganic filler; Forming a second layer on the first layer containing the thermosetting resin composition (2) in which the content of the inorganic filler (D2) with respect to the solid content of (2) is 50 to 80% by mass; An insulating resin film.
[2] The total thickness of the first layer and the second layer is 10 to 100 μm, and the ratio of the thickness of the first layer is 10 to 10% of the total thickness of the first layer and the second layer. The insulating resin film according to the above [1], which is 80%.
[3] The insulating resin film according to the above [1] or [2], wherein the (A1) thermosetting resin is an epoxy resin.
[4] The inorganic filler (D1) and the inorganic filler (D2) are each independently silica, alumina, barium sulfate, talc, mica, kaolin, boehmite, beryllia, barium titanate, potassium titanate, strontium titanate , Calcium titanate, aluminum carbonate, magnesium hydroxide, aluminum hydroxide, aluminum borate, aluminum silicate, calcium carbonate, calcium silicate, magnesium silicate, zinc borate, zinc stannate, zinc oxide, titanium oxide, carbonized The insulating resin film according to any one of the above [1] to [3], which is at least one selected from the group consisting of silicon, silicon nitride, boron nitride, clay, short glass fiber, glass powder, and hollow glass beads. .
[5] The insulating resin film according to any one of [1] to [4], wherein the volume average particle diameters of the (D1) inorganic filler and the (D2) inorganic filler are each 0.01 to 3 μm. .
[6] The insulation according to any one of [1] to [5], wherein the (D1) inorganic filler and the (D2) inorganic filler are both inorganic fillers surface-treated with a silane coupling agent. Resin film.
[7] The insulating resin film according to any one of [1] to [6], wherein the first layer has a support on a surface not having the second layer.
[8] An insulating resin film containing (A) a thermosetting resin, (B) a curing agent, (C) a curing accelerator, and (D) an inorganic filler, wherein the insulating resin film has a thickness in the thickness direction. When the lower part is the lower part from the center and the upper part is the upper part from the center, the content of the (D) inorganic filler in the lower layer is 1 to 40% by mass, and the content of the (D) inorganic filler in the upper layer Is 50 to 80% by mass.
[9] The insulating resin film according to the above [8], having a support on a lower layer side surface.
[10] A multilayer printed wiring board containing the insulating resin film according to any one of [1] to [9].
本発明により、低熱膨張率でありながら低表面粗さで導体層との高い接着強度を発現する絶縁樹脂フィルム、及び該絶縁樹脂フィルムを含有する多層プリント配線板が得られる。 According to the present invention, it is possible to obtain an insulating resin film exhibiting a low thermal expansion coefficient and a low surface roughness and exhibiting high adhesive strength to a conductor layer, and a multilayer printed wiring board containing the insulating resin film.
以下、本発明について詳細に説明する。
[絶縁樹脂フィルム]
本発明の絶縁樹脂フィルムは、(A1)熱硬化性樹脂、(B1)硬化剤、(C1)硬化促進剤及び(D1)無機充填材を含有してなる熱硬化性樹脂組成物(1)であって、該熱硬化性樹脂組成物(1)の固形分に対する(D1)無機充填材の含有量が1〜40質量%である熱硬化性樹脂組成物(1)を含有してなる第一層、及び
(A2)熱硬化性樹脂、(B2)硬化剤、(C2)硬化促進剤及び(D2)無機充填材を含有してなる熱硬化性樹脂組成物(2)であって、該熱硬化性樹脂組成物(2)の固形分に対する(D2)無機充填材の含有量が50〜80質量%である熱硬化性樹脂組成物(2)を含有してなる第二層を前記第一層上に形成してなる、絶縁樹脂フィルムである。
熱硬化性樹脂組成物(1)と熱硬化性樹脂組成物(2)の各成分は、同一であってもよいし、異なっていてもよい。第一層と第二層との密着性の観点からは、熱硬化性樹脂組成物(1)中の(A1)熱硬化性樹脂と、熱硬化性樹脂組成物(2)中の(A2)熱硬化性樹脂は、同一であることが好ましい。同様の観点から、熱硬化性樹脂組成物(1)中の各成分と、熱硬化性樹脂組成物(2)中の各成分は、いずれも同一であることが好ましい。
熱硬化性樹脂組成物(1)中の熱硬化性樹脂、硬化剤、硬化促進剤及び無機充填材、並びに、熱硬化性樹脂組成物(2)中の熱硬化性樹脂、硬化剤、硬化促進剤及び無機充填材について、以下に順に説明する。
Hereinafter, the present invention will be described in detail.
[Insulating resin film]
The insulating resin film of the present invention is a thermosetting resin composition (1) containing (A1) a thermosetting resin, (B1) a curing agent, (C1) a curing accelerator, and (D1) an inorganic filler. In addition, the first containing the thermosetting resin composition (1) in which the content of the inorganic filler (D1) is 1 to 40% by mass based on the solid content of the thermosetting resin composition (1). A thermosetting resin composition (2) comprising: (A2) a thermosetting resin; (B2) a curing agent; (C2) a curing accelerator; and (D2) an inorganic filler. The second layer containing the thermosetting resin composition (2) in which the content of the inorganic filler (D2) is 50 to 80% by mass based on the solid content of the curable resin composition (2) is the first layer. An insulating resin film formed on a layer.
Each component of the thermosetting resin composition (1) and the thermosetting resin composition (2) may be the same or different. From the viewpoint of the adhesion between the first layer and the second layer, (A1) the thermosetting resin in the thermosetting resin composition (1) and (A2) in the thermosetting resin composition (2). The thermosetting resins are preferably the same. From the same viewpoint, each component in the thermosetting resin composition (1) and each component in the thermosetting resin composition (2) are preferably the same.
Thermosetting resin, curing agent, curing accelerator and inorganic filler in thermosetting resin composition (1), and thermosetting resin, curing agent, curing acceleration in thermosetting resin composition (2) The agent and the inorganic filler will be described below in order.
(熱硬化性樹脂)
熱硬化性樹脂としては、例えば、エポキシ樹脂、フェノール樹脂、不飽和イミド樹脂、シアネート樹脂、イソシアネート樹脂、ベンゾオキサジン樹脂、オキセタン樹脂、アミノ樹脂、不飽和ポリエステル樹脂、アリル樹脂、ジシクロペンタジエン樹脂、シリコーン樹脂、トリアジン樹脂及びメラミン樹脂等が挙げられる。また、特にこれらに制限されず、公知の熱硬化性樹脂を使用できる。これらは、1種を単独で使用してもよいし、2種以上を併用することもできる。
これらの中でも、成形性及び電気絶縁性に優れる点で、エポキシ樹脂が好ましい。
エポキシ樹脂のエポキシ当量は、それぞれ、好ましくは100〜500g/eq、より好ましくは150〜400g/eq、さらに好ましくは200〜350g/eqである。ここで、エポキシ当量は、エポキシ基あたりの樹脂の質量(g/eq)であり、JIS K 7236に規定された方法に従って測定することができる。具体的には、自動滴定装置「GT−200型」(株式会社三菱化学アナリテック製)を用いて、200mlビーカーにエポキシ樹脂2gを秤量し、メチルエチルケトン90mlを滴下し、超音波洗浄器溶解後、氷酢酸10ml及び臭化セチルトリメチルアンモニウム1.5gを添加し、0.1mol/Lの過塩素酸/酢酸溶液で滴定することにより求められる。
(Thermosetting resin)
As the thermosetting resin, for example, epoxy resin, phenol resin, unsaturated imide resin, cyanate resin, isocyanate resin, benzoxazine resin, oxetane resin, amino resin, unsaturated polyester resin, allyl resin, dicyclopentadiene resin, silicone Resins, triazine resins and melamine resins. Further, the present invention is not particularly limited thereto, and a known thermosetting resin can be used. These may be used alone or in combination of two or more.
Among these, epoxy resins are preferred in terms of excellent moldability and electrical insulation.
The epoxy equivalent of the epoxy resin is preferably 100 to 500 g / eq, more preferably 150 to 400 g / eq, and further preferably 200 to 350 g / eq. Here, the epoxy equivalent is the mass (g / eq) of the resin per epoxy group, and can be measured according to the method specified in JIS K7236. Specifically, using an automatic titrator “GT-200” (manufactured by Mitsubishi Chemical Analytech Co., Ltd.), weigh 2 g of the epoxy resin in a 200 ml beaker, drop 90 ml of methyl ethyl ketone, dissolve in the ultrasonic cleaner, It is determined by adding 10 ml of glacial acetic acid and 1.5 g of cetyltrimethylammonium bromide, and titrating with a 0.1 mol / L perchloric acid / acetic acid solution.
エポキシ樹脂としては、1分子中に2個以上のエポキシ基を有するエポキシ樹脂が好ましい。ここで、エポキシ樹脂は、グリシジルエーテルタイプのエポキシ樹脂、グリシジルアミンタイプのエポキシ樹脂、グリシジルエステルタイプのエポキシ樹脂等に分類される。これらの中でも、グリシジルエーテルタイプのエポキシ樹脂が好ましい。
1分子中に2個のエポキシ基を有する樹脂としては、例えば、ビスフェノールA型エポキシ樹脂、ビスフェノールF型エポキシ樹脂、ビスフェノールS型エポキシ樹脂等のビスフェノール型エポキシ樹脂;脂環式エポキシ樹脂;脂肪族鎖状エポキシ樹脂が挙げられる。
また、分子中に、平均で2個よりも大きなエポキシ基を有する多官能エポキシ樹脂を使用してもよい。該多官能エポキシ樹脂としては、例えば、フェノールアラルキルノボラック型エポキシ樹脂、ビフェニルアラルキルノボラック型エポキシ樹脂(以上、アラルキルノボラック型エポキシ樹脂)、フェノールノボラック型エポキシ樹脂、クレゾールノボラック型エポキシ樹脂等のノボラック型エポキシ樹脂が挙げられる。特に、導体層との接着強度及び絶縁信頼性の観点から、アラルキルノボラック型エポキシ樹脂が好ましく、ビフェニルアラルキルノボラック型エポキシ樹脂がより好ましい。なお、ビフェニルアラルキルノボラック型エポキシ樹脂とは、1分子中にビフェニル誘導体の芳香族環を含有するアラルキルノボラック型エポキシ樹脂をいう。
エポキシ樹脂は、1種を単独で用いてもよいし、2種以上を併用してもよい。
As the epoxy resin, an epoxy resin having two or more epoxy groups in one molecule is preferable. Here, the epoxy resin is classified into a glycidyl ether type epoxy resin, a glycidylamine type epoxy resin, a glycidyl ester type epoxy resin, and the like. Among these, a glycidyl ether type epoxy resin is preferable.
Examples of the resin having two epoxy groups in one molecule include bisphenol type epoxy resins such as bisphenol A type epoxy resin, bisphenol F type epoxy resin and bisphenol S type epoxy resin; alicyclic epoxy resin; Epoxy resin.
Alternatively, a polyfunctional epoxy resin having an average of more than two epoxy groups in the molecule may be used. Examples of the polyfunctional epoxy resin include novolak epoxy resins such as phenol aralkyl novolak epoxy resin, biphenyl aralkyl novolak epoxy resin (above, aralkyl novolak epoxy resin), phenol novolak epoxy resin, and cresol novolak epoxy resin. Is mentioned. In particular, an aralkyl novolak type epoxy resin is preferable, and a biphenyl aralkyl novolak type epoxy resin is more preferable, from the viewpoint of adhesive strength to a conductor layer and insulation reliability. The biphenyl aralkyl novolak epoxy resin refers to an aralkyl novolac epoxy resin containing an aromatic ring of a biphenyl derivative in one molecule.
One epoxy resin may be used alone, or two or more epoxy resins may be used in combination.
エポキシ樹脂としては、下記式(1)で表されるエポキシ樹脂も好ましい。
(式中、pは1〜5を示す。)
pは、好ましくは1.2〜5、より好ましくは1.4〜3である。
As the epoxy resin, an epoxy resin represented by the following formula (1) is also preferable.
(In the formula, p represents 1 to 5.)
p is preferably 1.2 to 5, more preferably 1.4 to 3.
ビフェニルアラルキルノボラック型エポキシ樹脂の市販品としては、「NC−3000」(上記式(1)においてp=1.7のエポキシ樹脂、エポキシ当量=275g/eq)、「NC−3000H」(上記式(1)においてp=2.8のエポキシ樹脂、エポキシ当量=290g/eq)[以上、日本化薬株式会社製]が挙げられる。 Examples of commercially available biphenylaralkyl novolak type epoxy resins include “NC-3000” (an epoxy resin with p = 1.7 in the above formula (1), epoxy equivalent = 275 g / eq), and “NC-3000H” (the above formula ( In 1), an epoxy resin with p = 2.8, epoxy equivalent = 290 g / eq) [all manufactured by Nippon Kayaku Co., Ltd.].
(硬化剤)
硬化剤としては、前記熱硬化性樹脂を硬化し得るものであれば特に制限はなく、公知の硬化剤を使用することができる。
例えば、エポキシ樹脂の硬化剤としては、フェノール樹脂、酸無水物、アミン、ヒドラジド化合物、ジシアンジアミド及びシアネート樹脂等が挙げられる。これらの中でも、絶縁信頼性の観点から、フェノール樹脂が好ましい。
フェノール樹脂としては、1分子中に2個以上のフェノール性水酸基を有するフェノール樹脂であれば特に制限はない。例えば、レゾルシン、カテコール、ビスフェノールA、ビスフェノールF及び置換又は非置換のビフェノール等の1分子中に2個のフェノール性水酸基を有する化合物;アラルキル型フェノール樹脂;ジシクロペンタジエン型フェノール樹脂;トリフェニルメタン型フェノール樹脂;フェノールノボラック樹脂、クレゾールノボラック樹脂、アミノトリアジン変性ノボラック型フェノール樹脂等のノボラック型フェノール樹脂;レゾール型フェノール樹脂;ベンズアルデヒド型フェノールとアラルキル型フェノールとの共重合型フェノール樹脂;p−キシリレン及び/又はm−キシリレン変性フェノール樹脂;メラミン変性フェノール樹脂;テルペン変性フェノール樹脂;ジシクロペンタジエン型ナフトール樹脂;シクロペンタジエン変性フェノール樹脂;多環芳香環変性フェノール樹脂;ビフェニル型フェノール樹脂などが挙げられる。フェノール樹脂は、1種を単独で使用してもよいし、2種以上を併用してもよい。これらの中でも、絶縁信頼性の観点から、ノボラック型フェノール樹脂が好ましく、フェノールノボラック樹脂、アミノトリアジン変性ノボラック型フェノール樹脂がより好ましく、フェノールノボラック樹脂及びアミノトリアジン変性ノボラック型フェノール樹脂を併用することがさらに好ましい。
酸無水物としては、例えば、無水フタル酸、3−メチル−1,2,3,6−テトラヒドロ無水フタル酸、4−メチル−1,2,3,6−テトラヒドロ無水フタル酸、3−メチルヘキサヒドロ無水フタル酸、4−メチルヘキサヒドロ無水フタル酸、メチル−3,6−エンドメチレン−1,2,3,6−テトラヒドロ無水フタル酸、ベンゾフェノンテトラカルボン酸二無水物及びメチルハイミック酸等が挙げられる。酸無水物は、1種を単独で使用してもよいし、2種以上を併用してもよい。
(Curing agent)
The curing agent is not particularly limited as long as it can cure the thermosetting resin, and a known curing agent can be used.
For example, as a curing agent for an epoxy resin, a phenol resin, an acid anhydride, an amine, a hydrazide compound, dicyandiamide, a cyanate resin, and the like can be given. Among these, a phenol resin is preferable from the viewpoint of insulation reliability.
The phenol resin is not particularly limited as long as it has two or more phenolic hydroxyl groups in one molecule. For example, compounds having two phenolic hydroxyl groups in one molecule such as resorcin, catechol, bisphenol A, bisphenol F and substituted or unsubstituted biphenol; aralkyl-type phenolic resins; dicyclopentadiene-type phenolic resins; triphenylmethane-type Phenol resin; Novolak phenol resin such as phenol novolak resin, cresol novolak resin, aminotriazine-modified novolak phenol resin; resol phenol resin; copolymer phenol resin of benzaldehyde phenol and aralkyl phenol; p-xylylene and / or Or m-xylylene-modified phenolic resin; melamine-modified phenolic resin; terpene-modified phenolic resin; dicyclopentadiene-type naphthol resin; Nord resin; polycyclic aromatic ring-modified phenolic resins; and biphenyl type phenolic resins. The phenol resins may be used alone or in combination of two or more. Among these, from the viewpoint of insulation reliability, a novolak-type phenol resin is preferable, a phenol novolak resin, an aminotriazine-modified novolak-type phenol resin is more preferable, and it is further possible to use a phenol novolak resin and an aminotriazine-modified novolak-type phenol resin together. preferable.
Examples of the acid anhydride include phthalic anhydride, 3-methyl-1,2,3,6-tetrahydrophthalic anhydride, 4-methyl-1,2,3,6-tetrahydrophthalic anhydride, 3-methylhexa Hydrophthalic anhydride, 4-methylhexahydrophthalic anhydride, methyl-3,6-endomethylene-1,2,3,6-tetrahydrophthalic anhydride, benzophenonetetracarboxylic dianhydride, methylhymic acid, etc. No. As the acid anhydride, one type may be used alone, or two or more types may be used in combination.
アミンとしては、例えば、ジエチレントリアミン、トリエチレンテトラアミン、ジエチルアミノプロピルアミン等の鎖状脂肪族ポリアミン;N−アミノエチルピペラジン、イソホロンジアミン等の環状脂肪族ポリアミン;m−キシリレンジアミン等の脂肪芳香族ジアミン;m−フェニレンジアミン、ジアミノジフェニルメタン、ジアミノジフェニルスルホン等の芳香族アミン;グアニル尿素などが挙げられる。アミンは、1種を単独で使用してもよいし、2種以上を併用してもよい。
ヒドラジド化合物としては、例えば、アジピン酸ジヒドラジド、セバシン酸ジヒドラジド、ドデカンジオヒドラジド、イソフタル酸ジヒドラジド、サリチル酸ジヒドラジド等が挙げられる。ヒドラジド化合物は、1種を単独で使用してもよいし、2種以上を併用してもよい。
Examples of the amine include linear aliphatic polyamines such as diethylenetriamine, triethylenetetraamine, and diethylaminopropylamine; cyclic aliphatic polyamines such as N-aminoethylpiperazine and isophoronediamine; and aliphatic aromatic diamines such as m-xylylenediamine Aromatic amines such as m-phenylenediamine, diaminodiphenylmethane, diaminodiphenylsulfone; and guanylurea. One type of amine may be used alone, or two or more types may be used in combination.
Examples of the hydrazide compound include adipic dihydrazide, sebacic dihydrazide, dodecandiohydrazide, isophthalic dihydrazide, salicylic dihydrazide and the like. One hydrazide compound may be used alone, or two or more hydrazide compounds may be used in combination.
シアネート樹脂としては、例えば、2,2−ビス(4−シアナトフェニル)プロパン、ビス(4−シアナトフェニル)エタン、ビス(3,5−ジメチル−4−シアナトフェニル)メタン、2,2−ビス(4−シアナトフェニル)−1,1,1,3,3,3−ヘキサフルオロプロパン、α,α’−ビス(4−シアナトフェニル)−m−ジイソプロピルベンゼン、フェノール付加ジシクロペンタジエン重合体のシアネートエステル化合物、フェノールノボラック型シアネートエステル化合物及びクレゾールノボラック型シアネートエステル化合物等が挙げられる。シアネート樹脂は、1種を単独で使用してもよいし、2種以上を併用してもよい。 Examples of the cyanate resin include 2,2-bis (4-cyanatophenyl) propane, bis (4-cyanatophenyl) ethane, bis (3,5-dimethyl-4-cyanatophenyl) methane, 2,2 -Bis (4-cyanatophenyl) -1,1,1,3,3,3-hexafluoropropane, α, α′-bis (4-cyanatophenyl) -m-diisopropylbenzene, phenol-added dicyclopentadiene Polymeric cyanate ester compounds, phenol novolak-type cyanate ester compounds, cresol novolak-type cyanate ester compounds, and the like. One type of cyanate resin may be used alone, or two or more types may be used in combination.
(硬化促進剤)
硬化促進剤、特に、エポキシ樹脂の硬化促進剤としては、例えば、リン系化合物;イミダゾール化合物及びその誘導体;第3級アミン化合物;第4級アンモニウム化合物等が挙げられる。前記熱硬化性樹脂としてエポキシ樹脂を用いる場合には、硬化反応促進の観点から、リン系化合物が好ましい。
リン系化合物としては、例えば、トリフェニルホスフィン、ジフェニル(アルキルフェニル)ホスフィン、トリス(アルキルフェニル)ホスフィン、トリス(アルコキシフェニル)ホスフィン、トリス(アルキルアルコキシフェニル)ホスフィン、トリス(ジアルキルフェニル)ホスフィン、トリス(トリアルキルフェニル)ホスフィン、トリス(テトラアルキルフェニル)ホスフィン、トリス(ジアルコキシフェニル)ホスフィン、トリス(トリアルコキシフェニル)ホスフィン、トリス(テトラアルコキシフェニル)ホスフィン等のトリアリールホスフィン;トリアルキルホスフィン、ジアルキルアリールホスフィン、アルキルジアリールホスフィン等の有機ホスフィン;該有機ホスフィンと有機ボロンとの錯体;第三級ホスフィンとキノン系化合物との付加物などが挙げられる。
(Curing accelerator)
Examples of the curing accelerator, particularly a curing accelerator for an epoxy resin, include a phosphorus compound; an imidazole compound and a derivative thereof; a tertiary amine compound; and a quaternary ammonium compound. When an epoxy resin is used as the thermosetting resin, a phosphorus compound is preferred from the viewpoint of accelerating the curing reaction.
Examples of the phosphorus-based compound include triphenylphosphine, diphenyl (alkylphenyl) phosphine, tris (alkylphenyl) phosphine, tris (alkoxyphenyl) phosphine, tris (alkylalkoxyphenyl) phosphine, tris (dialkylphenyl) phosphine, tris ( Triarylphosphines such as trialkylphenyl) phosphine, tris (tetraalkylphenyl) phosphine, tris (dialkoxyphenyl) phosphine, tris (trialkoxyphenyl) phosphine, and tris (tetraalkoxyphenyl) phosphine; trialkylphosphines, dialkylarylphosphines Phosphines, such as alkyldiarylphosphines; complexes of such organic phosphines with organic borons; Such adducts of emissions based compounds.
イミダゾール化合物及びその誘導体の具体例としては、例えば、2−メチルイミダゾール、2−エチルイミダゾール、2−ウンデシルイミダゾール、2−ヘプタデシルイミダゾール、2−フェニルイミダゾール、1,2−ジメチルイミダゾール、2−エチル−1−メチルイミダゾール、1,2−ジエチルイミダゾール、1−エチル−2−メチルイミダゾール、2−エチル−4−メチルイミダゾール、4−エチル−2−メチルイミダゾール、2−フェニル−4−メチルイミダゾール、1−ベンジル−2−フェニルイミダゾール、1−シアノエチル−2−メチルイミダゾール、1−シアノエチル−2−エチルイミダゾール、1−シアノエチル−2−フェニルイミダゾール、1−シアノエチル−2−エチル−4−メチルイミダゾール、2−フェニル−4,5−ジヒドロキシメチルイミダゾール、2−フェニル−4−メチル−5−ヒドロキシメチルイミダゾール、2,3−ジヒドロ−1H−ピロロ[1,2−a]ベンズイミダゾール、2,4−ジアミノ−6−[2'−メチルイミダゾリル−(1’)]エチル−s−トリアジン、2,4−ジアミノ−6−[2'−ウンデシルイミダゾリル−(1’)]エチル−s−トリアジン、2,4−ジアミノ−6−[2'−エチル−4'−メチルイミダゾリル−(1’)]エチル−s−トリアジン等のイミダゾール化合物;前記イミダゾール化合物とトリメリト酸との付加反応物;前記イミダゾール化合物とイソシアヌル酸との付加反応物;前記イミダゾール化合物と臭化水素酸との付加反応物;前記イミダゾール化合物とエポキシ樹脂との付加反応物などが挙げられる。イミダゾール化合物は、1種を単独で使用してもよいし、2種以上を併用してもよい。 Specific examples of the imidazole compound and its derivative include, for example, 2-methylimidazole, 2-ethylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 2-phenylimidazole, 1,2-dimethylimidazole, 2-ethyl -1-methylimidazole, 1,2-diethylimidazole, 1-ethyl-2-methylimidazole, 2-ethyl-4-methylimidazole, 4-ethyl-2-methylimidazole, 2-phenyl-4-methylimidazole, 1 -Benzyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole, 1-cyanoethyl-2-ethylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-ethyl-4-methylimidazole, 2- Phenyl- , 5-Dihydroxymethylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, 2,3-dihydro-1H-pyrrolo [1,2-a] benzimidazole, 2,4-diamino-6- [2 '-Methylimidazolyl- (1')] ethyl-s-triazine, 2,4-diamino-6- [2'-undecylimidazolyl- (1 ')] ethyl-s-triazine, 2,4-diamino-6 -Imidazole compounds such as-[2'-ethyl-4'-methylimidazolyl- (1 ')] ethyl-s-triazine; addition reaction products of the imidazole compounds with trimellitic acid; addition reactions of the imidazole compounds with isocyanuric acid Products: an addition reaction product of the imidazole compound with hydrobromic acid; an addition reaction product of the imidazole compound with an epoxy resin. One imidazole compound may be used alone, or two or more imidazole compounds may be used in combination.
第三級アミンとしては、例えば、トリエチルアミン、トリ−n−プロピルアミン、トリイソプロピルアミン、トリ−n−ブチルアミン、ジエチルイソプロピルアミン、ベンジルジメチルアミン、N,N−ジメチルアニリン及びN,N,N',N'−テトラメチルエチレンジアミン等が挙げられる。第三級アミンは、1種を単独で使用してもよいし、2種以上を併用してもよい。
第四級アンモニウム塩としては、例えば、テトラエチルアンモニウムクロリド、テトラプロピルアンモニウムクロリド、テトラブチルアンモニウムクロリド、テトラブチルアンモニウムブロミド、テトラヘキシルアンモニウムブロミド及びベンジルトリメチルアンモニウムクロリド等が挙げられる。第四級アンモニウム塩は、1種を単独で使用してもよいし、2種以上を併用してもよい。
As the tertiary amine, for example, triethylamine, tri-n-propylamine, triisopropylamine, tri-n-butylamine, diethylisopropylamine, benzyldimethylamine, N, N-dimethylaniline and N, N, N ′, N'-tetramethylethylenediamine and the like can be mentioned. As the tertiary amine, one type may be used alone, or two or more types may be used in combination.
Examples of the quaternary ammonium salt include tetraethylammonium chloride, tetrapropylammonium chloride, tetrabutylammonium chloride, tetrabutylammonium bromide, tetrahexylammonium bromide, and benzyltrimethylammonium chloride. As the quaternary ammonium salt, one type may be used alone, or two or more types may be used in combination.
(無機充填材)
無機充填材としては、例えば、シリカ、アルミナ、硫酸バリウム、タルク、マイカ、カオリン、ベーマイト、ベリリア、チタン酸バリウム、チタン酸カリウム、チタン酸ストロンチウム、チタン酸カルシウム、炭酸アルミニウム、水酸化マグネシウム、水酸化アルミニウム、ホウ酸アルミニウム、ケイ酸アルミニウム、炭酸カルシウム、ケイ酸カルシウム、ケイ酸マグネシウム、ホウ酸亜鉛、スズ酸亜鉛、酸化亜鉛、酸化チタン、炭化ケイ素、窒化ケイ素、窒化ホウ素、焼成クレー等のクレー、ガラス短繊維、ガラス粉及び中空ガラスビーズ等が挙げられ、これらからなる群から選択される少なくとも1種が好ましく使用される。ガラスとしては、Eガラス、Tガラス、Dガラス等が好ましく挙げられる。これらの中でも、絶縁樹脂層の熱膨張率低減の観点から、シリカが好ましい。
前記シリカとしては、例えば、湿式法で製造され含水率の高い沈降シリカと、乾式法で製造され結合水等をほとんど含まない乾式法シリカが挙げられる。乾式法シリカとしては、さらに、製造法の違いにより破砕シリカ、フュームドシリカ、溶融シリカ(溶融球状シリカ)が挙げられる。無機充填材に用いられるシリカは、低熱膨張性及び樹脂に充填した際の高流動性の観点から、溶融シリカが好ましい。
(Inorganic filler)
Examples of the inorganic filler include silica, alumina, barium sulfate, talc, mica, kaolin, boehmite, beryllia, barium titanate, potassium titanate, strontium titanate, calcium titanate, aluminum carbonate, magnesium hydroxide, and hydroxide. Clays such as aluminum, aluminum borate, aluminum silicate, calcium carbonate, calcium silicate, magnesium silicate, zinc borate, zinc stannate, zinc oxide, titanium oxide, silicon carbide, silicon nitride, boron nitride, calcined clay, Examples thereof include short glass fibers, glass powder, and hollow glass beads, and at least one selected from the group consisting of these is preferably used. Preferred examples of the glass include E glass, T glass, and D glass. Among these, silica is preferred from the viewpoint of reducing the coefficient of thermal expansion of the insulating resin layer.
Examples of the silica include precipitated silica produced by a wet method and having a high water content, and dry silica produced by a dry method and containing almost no bound water. Dry silica further includes crushed silica, fumed silica, and fused silica (fused spherical silica) depending on the production method. Silica used for the inorganic filler is preferably fused silica from the viewpoint of low thermal expansion and high fluidity when filled into a resin.
シリカは、シランカップリング剤によって表面処理されたシリカが好ましい。シランカップリング剤によって表面処理されたシリカを用いると、シリカと樹脂成分との接着力が向上し、シリカの脱落が抑制され、表面粗さが低下する傾向にある。
前記シランカップリング剤としては、例えば、アミノシラン系カップリング剤、エポキシシラン系カップリング剤、フェニルシラン系カップリング剤、アルキルシラン系カップリング剤、アルケニルシラン系カップリング剤、アルキニルシラン系カップリング剤、ハロアルキルシラン系カップリング剤、シロキサン系カップリング剤、ヒドロシラン系カップリング剤、シラザン系カップリング剤、アルコキシシラン系カップリング剤、クロロシラン系カップリング剤、(メタ)アクリルシラン系カップリング剤、アミノシラン系カップリング剤、イソシアヌレートシラン系カップリング剤、ウレイドシラン系カップリング剤、メルカプトシラン系カップリング剤、スルフィドシラン系カップリング剤及びイソシアネートシラン系カップリング剤等が挙げられる。これらの中でも、アルケニルシラン系カップリング剤が好ましく、ビニルシラン系カップリング剤がより好ましい。
The silica is preferably silica that has been surface-treated with a silane coupling agent. When silica that has been surface-treated with a silane coupling agent is used, the adhesive force between silica and the resin component is improved, the falling off of silica is suppressed, and the surface roughness tends to decrease.
Examples of the silane coupling agent include an aminosilane-based coupling agent, an epoxysilane-based coupling agent, a phenylsilane-based coupling agent, an alkylsilane-based coupling agent, an alkenylsilane-based coupling agent, and an alkynylsilane-based coupling agent. , Haloalkylsilane coupling agent, siloxane coupling agent, hydrosilane coupling agent, silazane coupling agent, alkoxysilane coupling agent, chlorosilane coupling agent, (meth) acrylsilane coupling agent, aminosilane Coupling agent, isocyanurate silane coupling agent, ureido silane coupling agent, mercapto silane coupling agent, sulfide silane coupling agent and isocyanate silane coupling Etc. The. Among these, alkenyl silane coupling agents are preferred, and vinyl silane coupling agents are more preferred.
無機充填材の平均粒子径は、0.01〜3μmであることが好ましく、0.01〜1μmであることがより好ましく、0.1〜1μmであることがさらに好ましい。特に、無機充填材としてシリカを用いる場合、シリカの平均粒子径は前記範囲であることが好ましい。
無機充填材の平均粒子径を前記範囲にすることで、フィルム成形性を良好に保ちながら、絶縁層の表面粗さが低減する傾向にある。
なお、平均粒子径とは、粒子の全体積を100%として粒子径による累積度数分布曲線を求めた時、ちょうど体積50%に相当する点の粒子径のことであり、レーザー回折散乱法を用いた粒度分布測定装置等で測定することができる。
The average particle diameter of the inorganic filler is preferably from 0.01 to 3 μm, more preferably from 0.01 to 1 μm, and still more preferably from 0.1 to 1 μm. In particular, when silica is used as the inorganic filler, the average particle size of the silica is preferably in the above range.
By setting the average particle diameter of the inorganic filler in the above range, the surface roughness of the insulating layer tends to be reduced while maintaining good film formability.
The average particle diameter is a particle diameter at a point corresponding to exactly 50% by volume when a cumulative frequency distribution curve based on the particle diameter is determined with the total volume of the particles being 100%. Can be measured by a particle size distribution measuring device or the like.
(その他の成分)
熱硬化性樹脂組成物(1)及び熱硬化性樹脂組成物(2)はいずれも、さらにその他の成分を含有してもよい。
その他の成分としては、例えば、有機充填材、難燃剤、熱可塑性樹脂、紫外線吸収剤、酸化防止剤、光重合開始剤、蛍光増白剤及び接着性向上剤等が挙げられる。
有機充填材としては、例えば、ポリエチレン、ポリプロピレン、ポリスチレン、ポリフェニレンエーテル樹脂、シリコーン樹脂、テトラフルオロエチレン樹脂等よりなる樹脂粒子;アクリル酸エステル系樹脂、メタクリル酸エステル系樹脂、共役ジエン系樹脂等よりなるゴム状態のコア層と、アクリル酸エステル系樹脂、メタクリル酸エステル系樹脂、芳香族ビニル系樹脂、シアン化ビニル系樹脂等よりなるガラス状態のシェル層とを有する、いわゆるコアシェル構造の樹脂粒子等が挙げられる。
難燃剤としては、例えば、臭素及び/又は塩素を含有するハロゲン系難燃剤;トリフェニルホスフェート、トリクレジルホスフェート、トリスジクロロプロピルホスフェート、リン酸エステル系化合物、赤リン等のリン系難燃剤;スルファミン酸グアニジン、硫酸メラミン、ポリリン酸メラミン、メラミンシアヌレート等の窒素系難燃剤;シクロホスファゼン、ポリホスファゼン等のホスファゼン系難燃剤などが挙げられる。
熱可塑性樹脂としては、例えば、ポリフェニレンエーテル樹脂、フェノキシ樹脂、ポリカーボネート樹脂、ポリエステル樹脂、ポリアミド樹脂、ポリイミド樹脂、ポリアミドイミド樹脂、キシレン樹脂、石油樹脂及びシリコーン樹脂等が挙げられる。
紫外線吸収剤としては、例えば、ベンゾトリアゾール系紫外線吸収剤等が挙げられる。酸化防止剤としては、例えば、ヒンダードフェノール系酸化防止剤、ヒンダードアミン系酸化防止剤等が挙げられる。光重合開始剤としては、例えば、ベンゾフェノン類、ベンジルケタール類、チオキサントン系の光重合開始剤等が挙げられる。蛍光増白剤としては、例えば、スチルベン誘導体の蛍光増白剤が挙げられる。接着性向上剤としては、例えば、尿素シラン等の尿素化合物;シラン系カップリング剤、チタネート系カップリング剤、アルミネート系カップリング剤等のカップリング剤などが挙げられる。
(Other components)
Both the thermosetting resin composition (1) and the thermosetting resin composition (2) may further contain other components.
Other components include, for example, an organic filler, a flame retardant, a thermoplastic resin, an ultraviolet absorber, an antioxidant, a photopolymerization initiator, a fluorescent brightener, and an adhesion improver.
Examples of the organic filler include resin particles made of polyethylene, polypropylene, polystyrene, polyphenylene ether resin, silicone resin, tetrafluoroethylene resin, and the like; acrylate resin, methacrylate resin, conjugated diene resin, and the like. A so-called core-shell resin particle having a core layer in a rubber state and a shell layer in a glass state made of an acrylate resin, a methacrylate resin, an aromatic vinyl resin, a vinyl cyanide resin, or the like. No.
Examples of the flame retardant include a halogen-based flame retardant containing bromine and / or chlorine; a phosphorus-based flame retardant such as triphenyl phosphate, tricresyl phosphate, trisdichloropropyl phosphate, a phosphoric ester compound, or red phosphorus; Nitrogen-based flame retardants such as guanidine acid, melamine sulfate, melamine polyphosphate, and melamine cyanurate; and phosphazene-based flame retardants such as cyclophosphazene and polyphosphazene.
Examples of the thermoplastic resin include polyphenylene ether resin, phenoxy resin, polycarbonate resin, polyester resin, polyamide resin, polyimide resin, polyamideimide resin, xylene resin, petroleum resin, and silicone resin.
Examples of the ultraviolet absorber include a benzotriazole-based ultraviolet absorber. Examples of the antioxidant include a hindered phenol antioxidant and a hindered amine antioxidant. Examples of the photopolymerization initiator include benzophenones, benzylketals, and thioxanthone-based photopolymerization initiators. Examples of the fluorescent whitening agent include a fluorescent whitening agent of a stilbene derivative. Examples of the adhesion improver include urea compounds such as urea silane; coupling agents such as silane coupling agents, titanate coupling agents, and aluminate coupling agents.
〔熱硬化性樹脂組成物における各成分の含有割合〕
熱硬化性樹脂組成物(1)においては、(D1)無機充填材の含有量は、熱硬化性樹脂組成物(1)の固形分に対して1〜40質量%である。一方、熱硬化性樹脂組成物(2)においては、(D2)無機充填材の含有量は、熱硬化性樹脂組成物(2)の固形分に対して50〜80質量%である。(D1)無機充填材及び(D2)無機充填材の含有量がそれぞれ前記範囲にあることで、低熱膨張率でありながら低表面粗さで導体層との高い接着強度を発現する絶縁樹脂フィルムが得られる傾向にある。
(D1)無機充填材の含有量は、熱硬化性樹脂組成物(1)の固形分に対して好ましくは10〜40質量%、より好ましくは20〜40質量%、さらに好ましくは30〜40質量%である。また、(D2)無機充填材の含有量は、熱硬化性樹脂組成物(2)の固形分に対して、好ましくは55〜75質量%、より好ましくは60〜75質量%、さらに好ましくは60〜70質量%である。
なお、前記した(D1)無機充填材の含有量の数値範囲と、前記した(D2)無機充填材の含有量の数値範囲とは、任意に組み合わせることができる。
(Content ratio of each component in the thermosetting resin composition)
In the thermosetting resin composition (1), the content of the inorganic filler (D1) is 1 to 40% by mass based on the solid content of the thermosetting resin composition (1). On the other hand, in the thermosetting resin composition (2), the content of the inorganic filler (D2) is 50 to 80% by mass based on the solid content of the thermosetting resin composition (2). When the content of the inorganic filler (D1) and the content of the inorganic filler (D2) are in the above ranges, respectively, the insulating resin film which has a low coefficient of thermal expansion and a low surface roughness and which exhibits high adhesive strength to the conductor layer can be obtained. Tend to be obtained.
(D1) The content of the inorganic filler is preferably from 10 to 40% by mass, more preferably from 20 to 40% by mass, and still more preferably from 30 to 40% by mass, based on the solid content of the thermosetting resin composition (1). %. The content of (D2) the inorganic filler is preferably 55 to 75% by mass, more preferably 60 to 75% by mass, and still more preferably 60 to 75% by mass, based on the solid content of the thermosetting resin composition (2). 7070% by mass.
The numerical range of the content of the inorganic filler (D1) and the numerical range of the content of the inorganic filler (D2) can be arbitrarily combined.
(D1)無機充填材の含有量と(D2)無機充填材の含有量が上記範囲にあれば、それ以外の成分の含有量に特に制限はなく、当業者の常識の範囲で適宜選択することができる。
例えば、熱硬化性樹脂組成物(1)における(A1)熱硬化性樹脂の含有量は、熱硬化性樹脂組成物(1)の固形分(無機充填材を含む。)に対して好ましくは20〜65質量%、より好ましくは30〜65質量%、さらに好ましくは40〜60質量%である。熱硬化性樹脂組成物(2)における(A2)熱硬化性樹脂の含有量は、熱硬化性樹脂組成物(2)の固形分(無機充填材を含む。)に対して好ましくは15〜50質量%、より好ましくは15〜40質量%、さらに好ましくは20〜30質量%である。
また、熱硬化性樹脂組成物(1)における(C1)硬化促進剤の含有量は、(A1)熱硬化性樹脂の含有量に対して、好ましくは0.1〜5質量%、より好ましくは0.5〜5質量%、さらに好ましくは1〜5質量%である。同様に、熱硬化性樹脂組成物(2)における(C2)硬化促進剤の含有量は、(A2)熱硬化性樹脂の含有量に対して、好ましくは0.1〜5質量%、より好ましくは0.5〜5質量%、さらに好ましくは1〜5質量%である。
If the content of (D1) the inorganic filler and the content of (D2) the inorganic filler are within the above range, the content of the other components is not particularly limited, and may be appropriately selected within the range of common knowledge of those skilled in the art. Can be.
For example, the content of the (A1) thermosetting resin in the thermosetting resin composition (1) is preferably 20 with respect to the solid content (including the inorganic filler) of the thermosetting resin composition (1). 6565 mass%, more preferably 30-65 mass%, further preferably 40-60 mass%. The content of the thermosetting resin (A2) in the thermosetting resin composition (2) is preferably 15 to 50 with respect to the solid content (including the inorganic filler) of the thermosetting resin composition (2). %, More preferably 15 to 40% by mass, even more preferably 20 to 30% by mass.
Moreover, the content of the (C1) curing accelerator in the thermosetting resin composition (1) is preferably 0.1 to 5% by mass, more preferably the content of the (A1) thermosetting resin. It is 0.5 to 5% by mass, more preferably 1 to 5% by mass. Similarly, the content of the (C2) curing accelerator in the thermosetting resin composition (2) is preferably 0.1 to 5% by mass, more preferably the content of the (A2) thermosetting resin. Is 0.5 to 5% by mass, more preferably 1 to 5% by mass.
(有機溶剤)
熱硬化性樹脂組成物(1)及び熱硬化性樹脂組成物(2)には、希釈することによって取り扱いを容易にし、絶縁樹脂フィルムを形成し易くするという観点から、有機溶剤を含有させてもよい。本明細書では、有機溶剤を含有する熱硬化性樹脂組成物は、樹脂ワニスと称されることがある。なお、該有機溶剤は、前記各成分と混合された状態で用いられたものであってもよいし、前記各成分とは別に、任意に用いたものであってもよい。
該有機溶剤としては、特に制限されないが、例えば、メタノール、エタノール、プロパノール、ブタノール、メチルセロソルブ、ブチルセロソルブ、プロピレングリコールモノメチルエーテル等のアルコール系溶剤;アセトン、メチルエチルケトン、メチルイソブチルケトン、シクロヘキサノン等のケトン系溶剤;酢酸ブチル、プロピレングリコールモノメチルエーテルアセテート等のエステル系溶剤;テトラヒドロフラン等のエーテル系溶剤;トルエン、キシレン、メシチレン等の芳香族系溶剤;ジメチルホルムアミド、ジメチルアセトアミド、N−メチルピロリドン等の窒素原子含有溶剤;ジメチルスルホキシド等の硫黄原子含有溶剤などが挙げられる。
これらの中でも、溶解性及び塗布後の外観の観点から、ケトン系溶剤、窒素原子含有溶剤、又はこれらの混合溶媒が好ましく、アセトン、メチルエチルケトン、メチルイソブチルケトン、シクロヘキサノン、ジメチルホルムアミド、ジメチルアセトアミド、N−メチルピロリドンがより好ましい。また、アセトン、メチルエチルケトン、メチルイソブチルケトン又はシクロヘキサノンと、ジメチルホルムアミド、ジメチルアセトアミド又はN−メチルピロリドンとの混合溶媒もより好ましい。
有機溶剤は、1種を単独で使用してもよいし、2種以上を併用してもよい。
熱硬化性樹脂組成物(1)及び熱硬化性樹脂組成物(2)における有機溶剤の含有量はいずれも、塗布時の膜厚を安定化し、且つ外観が良好となる観点から、固形分濃度(有機溶剤以外の成分の濃度)が好ましくは10〜80質量%、より好ましくは20〜75質量%、さらに好ましくは40〜75質量%、特に好ましくは50〜70質量%となるようにする。
(Organic solvent)
The thermosetting resin composition (1) and the thermosetting resin composition (2) may contain an organic solvent from the viewpoint of facilitating handling by dilution and facilitating formation of an insulating resin film. Good. In this specification, a thermosetting resin composition containing an organic solvent may be referred to as a resin varnish. The organic solvent may be used in a state of being mixed with the above components, or may be used arbitrarily separately from the above components.
Examples of the organic solvent include, but are not particularly limited to, alcohol solvents such as methanol, ethanol, propanol, butanol, methyl cellosolve, butyl cellosolve, and propylene glycol monomethyl ether; ketone solvents such as acetone, methyl ethyl ketone, methyl isobutyl ketone, and cyclohexanone. Ester solvents such as butyl acetate and propylene glycol monomethyl ether acetate; ether solvents such as tetrahydrofuran; aromatic solvents such as toluene, xylene and mesitylene; solvents containing nitrogen atoms such as dimethylformamide, dimethylacetamide and N-methylpyrrolidone. A sulfur atom-containing solvent such as dimethyl sulfoxide.
Among these, from the viewpoint of solubility and appearance after coating, ketone solvents, nitrogen atom-containing solvents, or a mixed solvent thereof are preferable, and acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, dimethylformamide, dimethylacetamide, N- Methyl pyrrolidone is more preferred. Further, a mixed solvent of acetone, methyl ethyl ketone, methyl isobutyl ketone or cyclohexanone and dimethylformamide, dimethylacetamide or N-methylpyrrolidone is more preferable.
One organic solvent may be used alone, or two or more organic solvents may be used in combination.
The content of the organic solvent in the thermosetting resin composition (1) and the content of the organic solvent in the thermosetting resin composition (2) are all determined from the viewpoint of stabilizing the film thickness at the time of application and improving the appearance. (The concentration of the components other than the organic solvent) is preferably 10 to 80% by mass, more preferably 20 to 75% by mass, further preferably 40 to 75% by mass, and particularly preferably 50 to 70% by mass.
〔各層の膜厚〕
本発明の絶縁樹脂フィルムは、前述の通り、前記第一層、及び該第一層上に前記第二層を形成してなるものである。
本発明の絶縁樹脂フィルムは、第一層と第二層の全体の膜厚が好ましくは10〜100μmであり、且つ第一層の膜厚の割合が、第一層と第二層の全体の膜厚に対して好ましくは10〜80%の絶縁樹脂フィルムである。第一層と第二層の全体の膜厚は、より好ましくは10〜70μm、さらに好ましくは10〜50μm、特に好ましくは15〜40μm、最も好ましくは15〜35μmである。また、第一層の膜厚の割合は、第一層と第二層の全体の膜厚に対して、より好ましくは20〜80%、さらに好ましくは30〜70%、特に好ましくは40〜60%である。第一層と第二層の全体の膜厚の数値範囲と、第一層の膜厚の割合の数値範囲とは、任意に組み合わせることができる。
ここで、膜厚は、乾燥して得られた(乾燥条件については後述する。)絶縁樹脂フィルムの膜厚を示す。
[Thickness of each layer]
As described above, the insulating resin film of the present invention is obtained by forming the first layer and the second layer on the first layer.
In the insulating resin film of the present invention, the total thickness of the first layer and the second layer is preferably 10 to 100 μm, and the ratio of the thickness of the first layer is the total thickness of the first layer and the second layer. The insulating resin film is preferably 10 to 80% of the film thickness. The total thickness of the first layer and the second layer is more preferably 10 to 70 μm, further preferably 10 to 50 μm, particularly preferably 15 to 40 μm, and most preferably 15 to 35 μm. Further, the ratio of the thickness of the first layer to the total thickness of the first layer and the second layer is more preferably 20 to 80%, further preferably 30 to 70%, and particularly preferably 40 to 60%. %. The numerical range of the total thickness of the first layer and the second layer and the numerical range of the ratio of the thickness of the first layer can be arbitrarily combined.
Here, the film thickness indicates the film thickness of the insulating resin film obtained by drying (drying conditions will be described later).
〔支持体〕
本発明の絶縁樹脂フィルムの第一層において、第二層を有さない面に支持体を有していてもよい。この場合、支持体、第一層及び第二層は、「支持体/第一層/第二層」という構成を採ることになる。
支持体としては、例えば、ポリエチレンフィルム、ポリ塩化ビニルフィルム、ポリエチレンテレフタレート(PET)フィルム、ポリエチレンナフタレートフィルム、ポリイミドフィルム等の有機フィルム;銅箔、アルミニウム箔等の金属箔などが挙げられる。離型層付き有機フィルム、離型層付き金属箔も使用できる。
支持体の剥離容易性、価格及び取扱性の観点から、離型層付き有機フィルムが好ましく、離型層付きPETフィルムがより好ましい。離型層付きPETフィルムの市販品としては、例えば、「ユニピール(登録商標)TR−1」(ユニチカ株式会社製)、「セラピール(登録商標)」(東レフィルム加工株式会社製)等が挙げられる。
(Support)
In the first layer of the insulating resin film of the present invention, a support may be provided on a surface having no second layer. In this case, the support, the first layer, and the second layer have a configuration of “support / first layer / second layer”.
Examples of the support include organic films such as polyethylene film, polyvinyl chloride film, polyethylene terephthalate (PET) film, polyethylene naphthalate film, and polyimide film; and metal foils such as copper foil and aluminum foil. An organic film with a release layer and a metal foil with a release layer can also be used.
From the viewpoint of easy release of the support, cost, and handleability, an organic film with a release layer is preferable, and a PET film with a release layer is more preferable. Examples of commercially available PET films with a release layer include “Unipeel (registered trademark) TR-1” (manufactured by Unitika), “Therapy (registered trademark)” (manufactured by Toray Film Processing Co., Ltd.), and the like. .
なお、本発明の絶縁樹脂フィルムには、保護フィルムを積層することができる。保護フィルムは、主に、本発明の絶縁樹脂フィルムへ異物が付着すること及びキズが付くことを防止する目的で使用されるものである。保護フィルムは、ラミネート又は熱プレスの前に剥離される。保護フィルムとしては、支持体と同じ材料であってもよい。保護フィルムの厚さは特に限定されるものではないが、通常、好ましくは1〜40μmである。 In addition, a protective film can be laminated on the insulating resin film of the present invention. The protective film is mainly used for the purpose of preventing foreign substances from adhering to the insulating resin film of the present invention and preventing scratches. The protective film is peeled off before lamination or hot pressing. The same material as the support may be used as the protective film. Although the thickness of the protective film is not particularly limited, it is usually preferably 1 to 40 μm.
[絶縁樹脂フィルムの製造方法]
本発明の絶縁樹脂フィルムの製造方法に特に制限はないが、以下の2つの製造方法が挙げられる。
製造方法1:支持体上に第一層用の熱硬化性樹脂組成物(1)を塗布し、次いで第二層用の熱硬化性樹脂組成物(2)を第一層上に塗布した後、乾燥工程を経る方法。
製造方法2:支持体上に第一層用の熱硬化性樹脂組成物(1)を塗布し、乾燥工程を経た後、第二層用の熱硬化性樹脂組成物(2)を第一層上に塗布し、乾燥工程を経る方法。
製造方法1及び2の中でも、量産性の観点からは、製造方法1が好ましい。
[Production method of insulating resin film]
The method for producing the insulating resin film of the present invention is not particularly limited, but includes the following two production methods.
Production method 1: After applying the thermosetting resin composition (1) for the first layer on the support, and then applying the thermosetting resin composition (2) for the second layer on the first layer , Through a drying step.
Production method 2: After applying the thermosetting resin composition (1) for the first layer on the support and passing through a drying step, the thermosetting resin composition (2) for the second layer is applied to the first layer. A method of applying on top and passing through a drying process.
Among the production methods 1 and 2, the production method 1 is preferable from the viewpoint of mass productivity.
前記乾燥工程の条件としては、いずれの場合も、温度60〜180℃で30〜600秒乾燥する条件が好ましい。温度は70〜140℃であることがより好ましい。
熱硬化性樹脂組成物(1)及び(2)の塗布方法に特に制限はなく、公知の方法を利用できる。例えば、リバースコーター、グラビアコーター、エアドクターコーター、ダイコーター、リップコーター等の塗布装置を用いて塗布することができる。
As a condition of the drying step, in any case, a condition of drying at a temperature of 60 to 180 ° C. for 30 to 600 seconds is preferable. More preferably, the temperature is from 70 to 140C.
The method for applying the thermosetting resin compositions (1) and (2) is not particularly limited, and a known method can be used. For example, coating can be performed using a coating apparatus such as a reverse coater, a gravure coater, an air doctor coater, a die coater, and a lip coater.
本発明の絶縁樹脂フィルムの1態様として、以下の態様を挙げることができる。
(A)熱硬化性樹脂、(B)硬化剤、(C)硬化促進剤及び(D)無機充填材を含有してなる絶縁樹脂フィルムであって、該絶縁樹脂フィルムの厚み方向の中央から下方を下層とし、中央から上方を上層としたとき、下層中の(D)無機充填材の含有量が1〜40質量%であり、且つ上層中の(D)無機充填材の含有量が50〜80質量%である絶縁樹脂フィルム。
上記絶縁樹脂フィルムは、前記(A1)熱硬化性樹脂と(A2)熱硬化性樹脂が同一である場合に採り得る態様である。つまり、第一層と第二層との境界が不明瞭となる場合に、見かけ上、第一層と第二層とが1つの層になるが、その場合でも、該層中の中央を境とした上下において無機充填材の存在割合が異なっているため、その態様を表している。
下層中の(D)無機充填材の含有量は、好ましくは10〜40質量%、より好ましくは20〜40質量%、さらに好ましくは30〜40質量%である。また、上層中の(D)無機充填材の含有量は、好ましくは55〜75質量%、より好ましくは60〜75質量%、さらに好ましくは60〜70質量%である。
なお、上記絶縁樹脂フィルムの下層側の面に支持体を有していてもよい。この場合、絶縁樹脂フィルムは、「支持体/(下層/上層)」の構成をとることになる。
One embodiment of the insulating resin film of the present invention includes the following embodiments.
An insulating resin film containing (A) a thermosetting resin, (B) a curing agent, (C) a curing accelerator, and (D) an inorganic filler, and is downward from the center in the thickness direction of the insulating resin film. Is the lower layer, and the upper layer from the center is the upper layer, the content of the (D) inorganic filler in the lower layer is 1 to 40% by mass, and the content of the (D) inorganic filler in the upper layer is 50 to 50%. 80% by mass of an insulating resin film.
The insulating resin film is an embodiment that can be adopted when the (A1) thermosetting resin and the (A2) thermosetting resin are the same. That is, when the boundary between the first layer and the second layer is unclear, the first layer and the second layer are apparently one layer. Since the existing ratio of the inorganic filler is different between the upper and lower portions, the aspect is shown.
The content of the inorganic filler (D) in the lower layer is preferably 10 to 40% by mass, more preferably 20 to 40% by mass, and further preferably 30 to 40% by mass. Further, the content of the inorganic filler (D) in the upper layer is preferably 55 to 75% by mass, more preferably 60 to 75% by mass, and further preferably 60 to 70% by mass.
Note that a support may be provided on the lower layer side surface of the insulating resin film. In this case, the insulating resin film has a configuration of “support / (lower layer / upper layer)”.
[多層プリント配線板及びその製造方法]
本発明は、前記絶縁樹脂フィルムを含有する多層プリント配線板をも提供する。
本発明の多層プリント配線板の製造方法に特に制限はないが、例えば、下記工程(a)〜(f)を有する製造方法により製造することができる。
工程(a):導体回路形成を施した内層基板に感光性樹脂組成物を積層し、感光性樹脂組成物層を形成する工程(以下、感光性樹脂層形成工程(a)とも称する。)
工程(b):前記感光性樹脂層に露光処理及び現像処理を施してパターン化する工程(以下、感光性樹脂層パターン(ポスト)形成工程(b)とも称する。)
工程(c):前記ポストを覆うように前記内層基板上に本発明の絶縁樹脂フィルムを積層し、絶縁層を形成する工程(以下、絶縁層形成工程(c)とも称する。)
工程(d):前記絶縁層の一部を除去して前記ポストを露出させる工程(以下、頭出し工程(d)とも称する。)
工程(e):前記ポストを除去し、前記内層基板の導体回路を露出させる工程(以下、開口形成工程(e)とも称する。)
工程(f):絶縁層及び開口部に導体回路を形成する工程(以下、導体回路形成工程(f)とも称する。)
[Multilayer printed wiring board and manufacturing method thereof]
The present invention also provides a multilayer printed wiring board containing the insulating resin film.
The method for producing the multilayer printed wiring board of the present invention is not particularly limited. For example, it can be produced by a production method having the following steps (a) to (f).
Step (a): a step of laminating a photosensitive resin composition on an inner layer substrate on which a conductor circuit has been formed to form a photosensitive resin composition layer (hereinafter, also referred to as a photosensitive resin layer forming step (a)).
Step (b): a step of subjecting the photosensitive resin layer to exposure and development to form a pattern (hereinafter, also referred to as a photosensitive resin layer pattern (post) forming step (b)).
Step (c): a step of laminating the insulating resin film of the present invention on the inner layer substrate so as to cover the posts and forming an insulating layer (hereinafter, also referred to as an insulating layer forming step (c)).
Step (d): a step of exposing the post by removing a part of the insulating layer (hereinafter also referred to as a cueing step (d)).
Step (e): a step of removing the post and exposing the conductive circuit of the inner layer substrate (hereinafter, also referred to as an opening forming step (e)).
Step (f): a step of forming a conductive circuit in the insulating layer and the opening (hereinafter, also referred to as a conductive circuit forming step (f)).
(感光性樹脂層形成工程(a))
感光性樹脂層形成工程(a)において、導体回路形成を施した内層基板上に感光性樹脂組成物層を形成する方法としては、特に制限されるわけではないが、前記内層基板に、キャリア付き感光性樹脂フィルムをキャリアが外側になるように重ねる方法が簡便であり好ましい。内層基板にキャリア付き感光性樹脂フィルムを重ねる方法は、真空ラミネータ、ホットロールラミネータ等の装置を利用し、例えば、温度100〜130℃、圧力0.3〜0.5MPaの条件で実施できる。
なお、感光性樹脂組成物としては特に制限はなく、公知の感光性樹脂組成物を用いることができる。
(Photosensitive resin layer forming step (a))
In the photosensitive resin layer forming step (a), the method of forming the photosensitive resin composition layer on the inner layer substrate on which the conductor circuit has been formed is not particularly limited. A method of stacking the photosensitive resin films so that the carrier is on the outside is simple and preferable. The method of laminating the photosensitive resin film with a carrier on the inner layer substrate can be carried out using a device such as a vacuum laminator or a hot roll laminator, for example, at a temperature of 100 to 130 ° C. and a pressure of 0.3 to 0.5 MPa.
The photosensitive resin composition is not particularly limited, and a known photosensitive resin composition can be used.
(感光性樹脂層パターン(ポスト)形成工程(b))
感光性樹脂層パターン(ポスト)形成工程(b)は、例えば、キャリア上に、直径60μm以下(例えば直径30μm)の円状パターンが100μmピッチに配置されたデザインを有するフォトツールを配置し、その上から露光した後、キャリアを除去し、1質量%炭酸ナトリウム水溶液等を用いて未露光部を除去することにより実施される。
露光条件としては、使用する感光性樹脂組成物により適宜決定される。例えば、活性光線の光源としては、カーボンアーク灯、水銀蒸気アーク灯、高圧水銀灯、キセノンランプ、アルゴンレーザ等のガスレーザ、YAGレーザ等の固体レーザ、半導体レーザ等の、紫外線、可視光等を有効に放射するものを用いて行う。活性光線の波長(露光波長)としては、例えば、340〜430nmが用いられる。
(Photosensitive resin layer pattern (post) forming step (b))
In the photosensitive resin layer pattern (post) forming step (b), for example, a photo tool having a design in which circular patterns having a diameter of 60 μm or less (for example, 30 μm) are arranged at a pitch of 100 μm on a carrier is arranged. After the exposure from above, the carrier is removed, and the unexposed portion is removed using a 1% by mass aqueous solution of sodium carbonate or the like.
Exposure conditions are appropriately determined depending on the photosensitive resin composition used. For example, as a light source of an actinic ray, a carbon arc lamp, a mercury vapor arc lamp, a high-pressure mercury lamp, a xenon lamp, a gas laser such as an argon laser, a solid-state laser such as a YAG laser, a semiconductor laser, or the like, an ultraviolet ray, a visible light, etc. This is performed using a material that emits light. As a wavelength (exposure wavelength) of the actinic ray, for example, 340 to 430 nm is used.
(絶縁層形成工程(c))
内層基板上に絶縁層を形成するのに用いる装置としては、例えば、真空ラミネータ、ホットロールラミネータ、真空プレス等が挙げられる。これらの中でも、成形性及び量産性の観点から、真空ラミネータを用いるのが好ましい。真空ラミネータを用いて、例えば、温度60〜140℃、圧力0.2〜1MPaの条件で20〜60秒加圧する方法が好ましい。真空ラミネータとしては、例えば「MVLP500−600」(株式会社名機製作所製)等が用いられる。
また、絶縁層を形成した基板は、必要に応じて加熱処理を施してもよい。加熱処理の方法としては、例えば、乾燥機を用いて140〜190℃の温度で15〜120分加熱する方法が挙げられる。
(Insulating layer forming step (c))
Examples of an apparatus used for forming an insulating layer on the inner layer substrate include a vacuum laminator, a hot roll laminator, and a vacuum press. Among these, it is preferable to use a vacuum laminator from the viewpoint of moldability and mass productivity. For example, it is preferable to use a vacuum laminator to pressurize at a temperature of 60 to 140 ° C. and a pressure of 0.2 to 1 MPa for 20 to 60 seconds. As the vacuum laminator, for example, "MVLP500-600" (manufactured by Meiki Seisakusho) or the like is used.
The substrate on which the insulating layer is formed may be subjected to a heat treatment as needed. As a method of the heat treatment, for example, a method of heating at a temperature of 140 to 190 ° C. for 15 to 120 minutes using a dryer can be mentioned.
(頭出し工程(d))
頭出し工程(d)は、絶縁層の一部を除去するために、例えば、セラミックロールによる研磨処理、サンドブラスト処理、従来の配線板工程で用いられるデスミア処理、ウェットブラスト処理、プラズマ処理等を用いることができる。これらの中でも、表面平滑性及び量産性の観点から、プラズマ処理を用いることが好ましい。
プラズマ処理の条件は、ポストを露出できる限り特に制限はない。例えば、プラズマ装置「プラズマアッシャーPB−1000S」(株式会社モリエンジニアリング製)を用いて、酸素ガス10〜20%、アルゴンガス2〜8%の導入ガスにより、圧力300〜500Pa、RFパワー300〜500W、5〜20分の条件でプラズマ処理できる。
(Cueing step (d))
In the cueing step (d), in order to remove a part of the insulating layer, for example, a polishing treatment using a ceramic roll, a sand blast treatment, a desmear treatment, a wet blast treatment, a plasma treatment, or the like used in a conventional wiring board process is used. be able to. Among these, it is preferable to use plasma treatment from the viewpoint of surface smoothness and mass productivity.
The conditions for the plasma treatment are not particularly limited as long as the posts can be exposed. For example, using a plasma apparatus “Plasma Asher PB-1000S” (manufactured by Mori Engineering Co., Ltd.), a pressure of 300 to 500 Pa and an RF power of 300 to 500 W with an introduced gas of 10 to 20% of oxygen gas and 2 to 8% of argon gas. For 5 to 20 minutes.
(開口形成工程(e))
開口形成工程(e)において、ポストを除去するのに用いられる方法としては、例えば、配線形成に用いられる公知のめっきレジスト用剥離液による処理方法、及びプリント配線板製造工程で用いられる公知のデスミア液による処理方法等を用いることができる。量産性並びに絶縁層と後述の導体回路との密着性の観点から、デスミア液を用いることが好ましい。デスミア液としては、過マンガン酸水溶液を含むデスミア液が好ましい。
デスミア液としては、市販のデスミア原液を用いてもよく、例えば、「コンセントレートコンパクトCP」(アトテック社製)等を用いることができる。
(Opening forming step (e))
In the opening forming step (e), as a method used for removing the post, for example, a processing method using a known plating resist stripping solution used for wiring formation, and a known desmear used in a printed wiring board manufacturing process A treatment method using a liquid or the like can be used. It is preferable to use a desmear liquid from the viewpoint of mass productivity and adhesion between the insulating layer and a conductor circuit described later. As the desmear liquid, a desmear liquid containing a permanganate aqueous solution is preferable.
As the desmear liquid, a commercially available desmear stock solution may be used, and for example, “Concentrate Compact CP” (manufactured by Atotech) or the like can be used.
(導体回路形成工程(f))
導体回路形成工程(f)において、絶縁層及び開口部に導体回路を形成する方法としては、プリント配線板製造工程における公知の導体回路形成方法を用いることができる。例えば、従来のセミアディティブプロセスを用いることができる。セミアディティブプロセスにおける導体層形成手法としては、スパッタ法、無電解めっき、CVD(Chemical Vapor Deposition)等を用いることができる。価格及び量産性の観点から、導体層の形成は、無電解めっきにより行うことが好ましい。無電解めっき液としては市販のものを用いることができ、例えば、アトテック社製の無電解銅めっき液等が用いられる。
(Conductor circuit forming step (f))
In the conductor circuit forming step (f), as a method of forming a conductor circuit in the insulating layer and the opening, a known conductor circuit forming method in a printed wiring board manufacturing step can be used. For example, a conventional semi-additive process can be used. As a conductor layer forming method in the semi-additive process, a sputtering method, electroless plating, CVD (Chemical Vapor Deposition), or the like can be used. From the viewpoint of cost and mass productivity, the formation of the conductor layer is preferably performed by electroless plating. As the electroless plating solution, a commercially available one can be used. For example, an electroless copper plating solution manufactured by Atotech Co. is used.
次に、下記の実施例により本発明を更に詳しく説明するが、これらの実施例は本発明をいかなる意味においても制限するものではない。なお、各例で製造した絶縁樹脂フィルム又は評価基板を用いて、下記方法に従って、熱膨張率、表面粗さ、導体層との接着強度を測定した。 Next, the present invention will be described in more detail with reference to the following examples, but these examples do not limit the present invention in any way. In addition, using the insulating resin film or the evaluation substrate manufactured in each example, the thermal expansion coefficient, the surface roughness, and the adhesive strength with the conductor layer were measured according to the following methods.
[1.熱膨張率の測定方法]
各例で製造した絶縁樹脂フィルムを、PETフィルムが外側になるように重ね、真空ラミネータを用いて80℃、0.5MPaの条件で貼り合わせた。次に、PETフィルムを片面除去し、銅箔「YGP−12」(日本電解株式会社製)の光沢面にPETフィルムが外側になるように重ね、ラミネートした。次いで、キャリアフィルムを除去し、180℃90分で硬化した後、銅箔をエッチング処理により除去し、厚さ50μmの硬化物フィルムを製造した。製造した硬化物フィルムを、長さ30mm、幅4mmの大きさに切断し、熱分析システム「EXSTAR6000」(エスアイアイ・ナノテクノロジー社製)を用いて熱膨張率(線膨張率)を測定した。なお、試料が有する熱歪みの影響を除去するため、昇温−冷却サイクルを2回繰り返し、2回目の温度変位チャートの、50℃〜120℃の熱膨張率[ppm/℃]を測定し、低熱膨張性の指標とした。値が小さいほど、低熱膨張性に優れている。
測定条件 1st Run:室温→210℃(昇温速度10℃/min)
2nd Run:0℃→270℃(昇温速度10℃/min)
[1. Measurement method of thermal expansion coefficient]
The insulating resin films produced in each example were overlapped so that the PET film was on the outside, and were bonded together at 80 ° C. and 0.5 MPa using a vacuum laminator. Next, one side of the PET film was removed, and the PET film was laminated on the glossy surface of the copper foil “YGP-12” (manufactured by Nippon Denshi Co., Ltd.) so that the PET film was on the outside, and laminated. Next, after removing the carrier film and curing at 180 ° C. for 90 minutes, the copper foil was removed by etching treatment to produce a cured product film having a thickness of 50 μm. The manufactured cured product film was cut into a size of 30 mm in length and 4 mm in width, and the thermal expansion coefficient (linear expansion coefficient) was measured using a thermal analysis system “EXSTAR6000” (manufactured by SII Nanotechnology Co., Ltd.). In addition, in order to remove the influence of the thermal strain of the sample, the heating-cooling cycle was repeated twice, and the thermal expansion coefficient [ppm / ° C] of 50 ° C to 120 ° C in the second temperature displacement chart was measured. It was an index of low thermal expansion. The smaller the value, the better the low thermal expansion.
Measurement conditions 1 st Run: room temperature → 210 ° C. (heating rate 10 ° C. / min)
2 nd Run: 0 ℃ → 270 ℃ ( heating rate 10 ° C. / min)
[2.表面粗さ(Ra)の測定方法]
各例で得た評価用基板の導体層をエッチング処理によって除去し、露出した樹脂表面の表面粗さ(Ra)を表面形状測定装置「WykoNT9100」(Veeco社製)を用いて、下記測定条件にて測定した。
−測定条件−
内部レンズ:1倍
外部レンズ:50倍
測定範囲:0.120×0.095mm
測定深度:10μm
測定方式:垂直走査型干渉方式(VSI方式)
[2. Method for measuring surface roughness (Ra)]
The conductor layer of the evaluation substrate obtained in each example was removed by etching treatment, and the surface roughness (Ra) of the exposed resin surface was measured under the following measurement conditions using a surface shape measuring device “WykoNT9100” (manufactured by Veeco). Measured.
-Measurement conditions-
Internal lens: 1x External lens: 50x Measurement range: 0.120 x 0.095mm
Measurement depth: 10 μm
Measurement method: Vertical scanning interference method (VSI method)
[3.接着強度の測定方法]
各例で得た評価用基板の回路層の一部に、銅エッチング液「過硫酸アンモニウム(APS)」(三菱ガス化学社製)に浸漬することにより、幅10mm、長さ100mmの部位を形成した。オートグラフ「AG−100C」(株式会社島津製作所製)を用いて、この一端を回路層と樹脂の界面で剥がしてつかみ具でつかみ、室温中、垂直方向に引張り速度約50mm/分で引き剥がした時の荷重(kN/m)を測定した。
[3. Method for measuring adhesive strength]
A portion having a width of 10 mm and a length of 100 mm was formed by immersing a part of the circuit layer of the evaluation substrate obtained in each example in a copper etching solution “ammonium persulfate (APS)” (manufactured by Mitsubishi Gas Chemical Company). . Using an autograph “AG-100C” (manufactured by Shimadzu Corporation), peel off one end at the interface between the circuit layer and the resin, hold it with a gripper, and peel off at room temperature in a vertical direction at a pulling speed of about 50 mm / min. The load (kN / m) was measured.
(調製例1)熱硬化性樹脂組成物(1)の調製
(A1)成分としてビフェニルアラルキルノボラック型エポキシ樹脂「NC3000」(日本化薬株式会社製、エポキシ当量275g/eq、式(1)中のp=1.7)50.0gに、メチルエチルケトン25.0gを配合した。これに、(B1)成分としてフェノールノボラック樹脂「フェノライト(登録商標)TD−2131」(DIC株式会社製、水酸基当量104g/eq)4.1g及びアミノトリアジン変性ノボラック型フェノール樹脂「フェノライト(登録商標)LA3018−50P」(DIC株式会社製)27.4gを加え、さらに(C1)成分としてトリフェニルホスフィン1.4−ベンゾキノン付加体「P2」(北興化学工業株式会社製)0.15gを添加した後、メチルエチルケトンで希釈した。これに、(D1)成分としてシリカスラリー「SC2050KNK」(アドマテックス社製、70質量%)44.5gを加え、分散機「ナノマイザー」(吉田機械興業株式会社製)を用いて混合し、熱硬化性樹脂組成物(1)(固形分濃度約60質量%、固形分中の無機充填材含有量31.4質量%)を得た。
(Preparation Example 1) Preparation of thermosetting resin composition (1) Biphenylaralkyl novolak type epoxy resin "NC3000" (manufactured by Nippon Kayaku Co., Ltd., epoxy equivalent 275 g / eq, formula (1)) as component (A1) 25.0 g of methyl ethyl ketone was added to 50.0 g of p = 1.7). Then, 4.1 g of a phenol novolak resin “Phenolite (registered trademark) TD-2131” (manufactured by DIC Corporation, hydroxyl equivalent: 104 g / eq) as a component (B1) and an aminotriazine-modified novolak type phenol resin “Phenolite (registered) (Trademark) LA3018-50P "(manufactured by DIC Corporation), and 0.15 g of a triphenylphosphine 1.4-benzoquinone adduct" P2 "(manufactured by Hokko Chemical Industry Co., Ltd.) as a component (C1). After that, the resultant was diluted with methyl ethyl ketone. To this, 44.5 g of a silica slurry “SC2050KNK” (manufactured by Admatechs Co., Ltd., 70% by mass) was added as the component (D1), and the mixture was mixed using a dispersing machine “Nanomizer” (manufactured by Yoshida Kikai Kogyo Co., Ltd.), followed by thermosetting. Resin composition (1) (solid content concentration: about 60% by mass, inorganic filler content in solid content: 31.4% by mass) was obtained.
(調製例2)熱硬化性樹脂組成物(2)の調製
(A2)成分としてビフェニルアラルキル型エポキシ樹脂「NC3000」(日本化薬株式会社製、エポキシ当量275g/eq、式(1)中のp=1.7)50.0gに、メチルエチルケトン25.0gを配合した。これに、(B2)成分としてフェノールノボラック樹脂「フェノライト(登録商標)TD−2131」(DIC株式会社製、水酸基当量104g/eq)4.1g及びアミノトリアジン変性ノボラック型フェノール樹脂「フェノライト(登録商標)LA3018−50P」(DIC株式会社製)27.4g加え、さらに(C2)成分としてトリフェニルホスフィン1.4−ベンゾキノン付加体「P2」(北興化学工業株式会社製)0.15gを添加した後、メチルエチルケトンで希釈した。(D2)成分としてシリカスラリー「SC2050KNK」(アドマテックス社製、70質量%)177.9gを加え、分散機「ナノマイザー」(吉田機械興業株式会社製)を用いて混合し、熱硬化性樹脂組成物(2)(固形分濃度約60質量%、固形分中の無機充填材含有量64.7質量%)を得た。
(Preparation Example 2) Preparation of thermosetting resin composition (2) As component (A2), biphenylaralkyl type epoxy resin "NC3000" (Nippon Kayaku Co., Ltd., epoxy equivalent 275 g / eq, p in formula (1)) = 1.7) 25.0 g of methyl ethyl ketone was added to 50.0 g. To this, 4.1 g of phenol novolak resin “Phenolite (registered trademark) TD-2131” (manufactured by DIC Corporation, hydroxyl equivalent 104 g / eq) as a component (B2) and aminotriazine-modified novolak type phenol resin “Phenolite (registered) (Trademark) LA3018-50P "(manufactured by DIC Corporation) in an amount of 27.4 g, and 0.15 g of a triphenylphosphine 1.4-benzoquinone adduct" P2 "(manufactured by Hokuko Chemical Industry Co., Ltd.) was further added as a component (C2). Thereafter, the resultant was diluted with methyl ethyl ketone. (D2) 177.9 g of a silica slurry “SC2050KNK” (manufactured by Admatechs, 70% by mass) was added as a component, and the mixture was mixed using a dispersing machine “Nanomizer” (manufactured by Yoshida Kikai Kogyo Co., Ltd.) to obtain a thermosetting resin composition. A product (2) (solid content concentration: about 60% by mass, inorganic filler content in the solid content: 64.7% by mass) was obtained.
(調製例3)熱硬化性樹脂組成物(3)の調製
(A1)成分としてビフェニルアラルキル型エポキシ樹脂「NC3000」(日本化薬株式会社製、エポキシ当量275g/eq、式(1)中のp=1.7)50.0gに、メチルエチルケトン25.0gを配合した。これに、(B1)成分としてフェノールノボラック樹脂「フェノライト(登録商標)TD−2131」(DIC株式会社製、水酸基当量104g/eq)4.1g及びアミノトリアジン変性ノボラック型フェノール樹脂「フェノライト(登録商標)LA3018−50P」(DIC株式会社製)27.4gを加え、さらに(C1)成分としてトリフェニルホスフィン1.4−ベンゾキノン付加体「P2」(北興化学工業株式会社製)0.15gを添加した後、メチルエチルケトンで希釈した。これに、(D1)成分としてシリカスラリー「SC2050KNK」(アドマテックス社製、70質量%)91.6gを加え、分散機「ナノマイザー」(吉田機械興業株式会社製)を用いて混合し、熱硬化性樹脂組成物(3)(固形分濃度約60質量%、固形分中の無機充填材含有量48.6質量%)を得た。
(Preparation Example 3) Preparation of thermosetting resin composition (3) Biphenylaralkyl type epoxy resin "NC3000" (manufactured by Nippon Kayaku Co., Ltd., epoxy equivalent 275 g / eq, p in formula (1)) as component (A1) = 1.7) 25.0 g of methyl ethyl ketone was added to 50.0 g. Then, 4.1 g of a phenol novolak resin “Phenolite (registered trademark) TD-2131” (manufactured by DIC Corporation, hydroxyl equivalent: 104 g / eq) as a component (B1) and an aminotriazine-modified novolak type phenol resin “Phenolite (registered) (Trademark) LA3018-50P "(manufactured by DIC Corporation), and 0.15 g of a triphenylphosphine 1.4-benzoquinone adduct" P2 "(manufactured by Hokko Chemical Industry Co., Ltd.) as a component (C1). After that, the resultant was diluted with methyl ethyl ketone. To this, 91.6 g of a silica slurry “SC2050KNK” (manufactured by Admatechs, 70% by mass) was added as a component (D1), and the mixture was mixed using a dispersing machine “Nanomizer” (manufactured by Yoshida Kikai Kogyo Co., Ltd.), followed by thermosetting. Resin composition (3) (solids concentration: about 60% by mass, content of inorganic filler in solids: 48.6% by mass) was obtained.
(実施例1)
支持体である離型剤付きPETフィルム「ユニピール(登録商標)TR−1」(ユニチカ株式会社製)上に、調製例1で得た第一層用の熱硬化性樹脂組成物(1)をバーコーター(第一理化株式会社製)で塗布し、その上に、調製例2で得た第二層用の熱硬化性樹脂組成物(2)をアプリケーター「YBA−6」型(ヨシミツ精機株式会社製)で塗布し、乾燥機を用いて80℃、5分の条件で乾燥し、第一層の厚み12μm、第二層の厚み13μmの絶縁樹脂フィルム1(第一層及び第二層中の無機充填材の合計含有量:48.7質量%)を得た。
得られた絶縁樹脂フィルム1を用い、以下の様にして評価用基板を製造した。
(Example 1)
The thermosetting resin composition (1) for a first layer obtained in Preparation Example 1 was placed on a PET film with a release agent “Unipiel (registered trademark) TR-1” (manufactured by Unitika Ltd.) as a support. The composition is applied with a bar coater (manufactured by Daiichi Rika Co., Ltd.), and the thermosetting resin composition (2) for the second layer obtained in Preparation Example 2 is applied to the applicator “YBA-6” type (Yoshimitsu Seiki Co., Ltd.) Co., Ltd.), dried at 80 ° C. for 5 minutes using a drier, and dried to a thickness of 12 μm for the first layer and 13 μm for the second layer. (Total content of inorganic filler: 48.7% by mass).
Using the obtained insulating resin film 1, a substrate for evaluation was manufactured as follows.
<評価用基板の製造>
まず、厚さ12μmの銅箔が両面に貼着された銅張積層体「MCL−E−679FG」(日立化成株式会社製)を準備した。銅張積層体の厚さは400μmであった。この銅表面を、CZ処理液「メックエッチボンド(登録商標)CZ−8100」(メック株式会社製)で粗化し、内層基板を製造した。
次いで上記絶縁樹脂フィルム1を内層基板上に、PETフィルムが外側になるように重ね、真空ラミネータを用いて、80℃、0.5MPaの条件で積層した(絶縁層形成工程(c)に相当する)。その後、PETフィルムを除去し、乾燥機を用いて160℃、30分の条件で加熱し、絶縁層付き基板を製造した。
−めっき法−
得られた絶縁層付き基板の絶縁層表面を、「プラズマアッシャーPB−1000S」(株式会社モリエンジニアリング製)を用いて、酸素ガス16%、アルゴンガス5%の導入ガスにより圧力400Pa、RFパワー400W、10分の条件でプラズマ処理を行った(頭出し工程(d)に相当する)。
次いで,膨潤液として,スウェリングディップセキュリガントP(アトテック社製)500mLと水酸化ナトリウム3gと純水500mLとの混合液を80℃に加温し、絶縁層付き基板をこれに5分間浸漬させた。次いで、絶縁層付き基板を水洗後,粗化液(デスミア液)として、コンセントレートコンパクトCP(アトテック社製)640mLと水酸化ナトリウム40gと純水360mLとの混合液を80℃に加温し、絶縁層付き基板をこれに10分間浸漬させた(開口形成工程(e)に相当する)。引き続き、中和液として、リダクションソリューションセキュリガントP500(アトテック社製)200mL/L、と98%硫酸100mLと純水700mLとの混合液を40℃に加熱し、絶縁層付き基板をこれに5分間浸漬させた。
次いで,絶縁層付き基板を水洗後,無電解めっきの前処理として、コンディショナー液としてクリーナーセキュリガント902(アトテック社製)40mLと純水960mLとの混合液を60℃に加温し、絶縁層付き基板を5分間浸漬させ、その後、絶縁層付き基板を水洗し、次にプレディップ工程としてプレディップネオガントB(アトテック社製)20mLと98%硫酸1mLと純水979mLとの混合液に25℃で1分浸漬させた。次に、触媒付与工程として、アクチベーターネオガント834コンク(アトテック社製)40mLと水酸化ナトリウム4gとホウ酸5gと純水960mLとの混合液に35℃で5分浸漬し、次に絶縁層付き基板を水洗後,還元工程として、リデューサーネオガントWA(アトテック社製)5mLとリデューサーアクセラレーター810mod(アトテック社製)100mLと純水895mLとの混合液に30℃で1分、絶縁層付き基板を浸漬させた。絶縁層付き基板を水洗後,最後に無電解銅めっき工程として、ベーシックソリューションプリントガントMSK−DK(アトテック社製)80mLとカッパーソリューションプリントガントMSK−DK(アトテック社製)40mLとスタビライザープリントガントMSK−DK(アトテック社製)3mLとリデューサーCu(アトテック社製)14mLと,純水853mLとの混合液に28℃で15分、絶縁層付き基板を浸漬させ、厚み約0.5μmの銅めっき被膜を形成した。絶縁層付き基板を水洗後,得られた絶縁層付き基板を乾燥機を用いて80℃で15分間乾燥した後、さらに硫酸銅電解めっきを行った。その後、アニール処理を170℃で30分間行い、絶縁層表面上に厚さ30μmの導体層を形成し(導体回路形成工程(f)に相当する)、評価用基板1を得た。
絶縁樹脂フィルム1又は評価用基板1を用いて、前述の方法に従って、熱膨張率、表面粗さ及び導体層との接着強度を測定した。結果を表1に示す。
<Manufacture of evaluation substrate>
First, a copper-clad laminate “MCL-E-679FG” (manufactured by Hitachi Chemical Co., Ltd.) having a copper foil having a thickness of 12 μm adhered to both surfaces was prepared. The thickness of the copper-clad laminate was 400 μm. This copper surface was roughened with a CZ treatment liquid “Mech Etch Bond (registered trademark) CZ-8100” (manufactured by Meck Co., Ltd.) to produce an inner layer substrate.
Next, the insulating resin film 1 was superimposed on the inner layer substrate so that the PET film was on the outside, and laminated using a vacuum laminator under the conditions of 80 ° C. and 0.5 MPa (corresponding to the insulating layer forming step (c)). ). Thereafter, the PET film was removed, and the substrate was heated at 160 ° C. for 30 minutes using a dryer to produce a substrate with an insulating layer.
-Plating method-
Using a plasma asher PB-1000S (manufactured by Mori Engineering Co., Ltd.), the insulating layer surface of the obtained substrate with an insulating layer was subjected to an introduced gas of 16% oxygen gas and 5% argon gas at a pressure of 400 Pa and an RF power of 400 W. The plasma treatment was performed for 10 minutes (corresponding to the cueing step (d)).
Next, as a swelling solution, a mixed solution of 500 mL of Swelling Dip Securigant P (manufactured by Atotech), 3 g of sodium hydroxide, and 500 mL of pure water was heated to 80 ° C., and the substrate with an insulating layer was immersed in this for 5 minutes. Was. Next, after washing the substrate with the insulating layer with water, as a roughening solution (desmear solution), a mixed solution of 640 mL of concentrate compact CP (manufactured by Atotech), 40 g of sodium hydroxide and 360 mL of pure water was heated to 80 ° C. The substrate with an insulating layer was immersed in this for 10 minutes (corresponding to the opening forming step (e)). Subsequently, as a neutralizing solution, a mixed solution of 200 mL / L of Reduction Solution Securigant P500 (manufactured by Atotech), 100 mL of 98% sulfuric acid and 700 mL of pure water was heated to 40 ° C., and the substrate with an insulating layer was added thereto for 5 minutes. It was immersed.
Next, after washing the substrate with an insulating layer with water, as a pretreatment for electroless plating, a mixed solution of 40 mL of cleaner Securigant 902 (manufactured by Atotech) and 960 mL of pure water as a conditioner solution is heated to 60 ° C. The substrate was immersed for 5 minutes, and then the substrate with an insulating layer was washed with water. Then, as a pre-dipping step, a mixed solution of 20 mL of Predip Neogant B (manufactured by Atotech), 1 mL of 98% sulfuric acid, and 979 mL of pure water was added at 25 ° C. For 1 minute. Next, as a catalyst applying step, the catalyst was immersed in a mixed solution of 40 mL of Activator Neogant 834 Conc (manufactured by Atotech), 4 g of sodium hydroxide, 5 g of boric acid, and 960 mL of pure water at 35 ° C. for 5 minutes. After washing the substrate with water, as a reduction step, a substrate with an insulating layer was placed in a mixed solution of 5 mL of Reducer Neogant WA (manufactured by Atotech), 100 mL of reducer accelerator 810 mod (manufactured by Atotech), and 895 mL of pure water at 30 ° C. for 1 minute, Was immersed. After washing the substrate with the insulating layer with water, finally as an electroless copper plating step, 80 mL of Basic Solution Print Gant MSK-DK (made by Atotech), 40 mL of Copper Solution Print Gant MSK-DK (made by Atotech) and stabilizer print Gant MSK- A substrate with an insulating layer is immersed in a mixture of 3 mL of DK (manufactured by Atotech), 14 mL of reducer Cu (manufactured by Atotech) and 853 mL of pure water at 28 ° C. for 15 minutes to form a copper plating film having a thickness of about 0.5 μm. Formed. After washing the substrate with an insulating layer with water, the obtained substrate with an insulating layer was dried at 80 ° C. for 15 minutes using a drier, and further subjected to copper sulfate electrolytic plating. Thereafter, annealing was performed at 170 ° C. for 30 minutes to form a conductor layer having a thickness of 30 μm on the surface of the insulating layer (corresponding to the conductor circuit forming step (f)), and the evaluation substrate 1 was obtained.
Using the insulating resin film 1 or the evaluation substrate 1, the coefficient of thermal expansion, the surface roughness, and the adhesive strength with the conductor layer were measured in accordance with the above-described methods. Table 1 shows the results.
(比較例1)
支持体である離型剤付きPETフィルム「ユニピール(登録商標)TR−1」(ユニチカ株式会社製)上に、調製例1で得た熱硬化性樹脂組成物(1)をバーコーター(第一理化株式会社製)で塗布し、乾燥機を用いて80℃、5分の条件で乾燥し、厚み25μmの絶縁樹脂フィルム2(無機充填材の含有量:31.4質量%)を得た。
得られた絶縁樹脂フィルム2を用い、実施例1と同様にして評価用基板2を製造した。
絶縁樹脂フィルム2又は評価用基板2を用いて、前述の方法に従って、熱膨張率、表面粗さ及び導体層との接着強度を測定した。結果を表1に示す。
(Comparative Example 1)
The thermosetting resin composition (1) obtained in Preparation Example 1 was coated on a PET film with a release agent “Unipeel (registered trademark) TR-1” (manufactured by Unitika Ltd.) as a support, using a bar coater (No. 1). It was applied at 80 ° C. for 5 minutes using a drier to obtain an insulating resin film 2 having a thickness of 25 μm (content of inorganic filler: 31.4% by mass).
An evaluation substrate 2 was manufactured in the same manner as in Example 1 using the obtained insulating resin film 2.
Using the insulating resin film 2 or the evaluation substrate 2, the coefficient of thermal expansion, the surface roughness, and the adhesive strength with the conductor layer were measured in accordance with the above-described methods. Table 1 shows the results.
(比較例2)
支持体である離型剤付きPETフィルム「ユニピール(登録商標)TR−1」(ユニチカ株式会社製)上に、調製例3で製造した熱硬化性樹脂組成物(3)をバーコーター(第一理化株式会社製)で塗布し、乾燥機を用いて80℃、5分の条件で乾燥し、厚み25μmの絶縁樹脂フィルム3(無機充填材の含有量:48.6質量%)を得た。
得られた絶縁樹脂フィルム3を用い、実施例1と同様にして評価用基板3を製造した。
絶縁樹脂フィルム3又は評価用基板3を用いて、前述の方法に従って、熱膨張率、表面粗さ及び導体層との接着強度を測定した。結果を表1に示す。
(Comparative Example 2)
The thermosetting resin composition (3) produced in Preparation Example 3 was coated on a PET film with a release agent “Unipiel (registered trademark) TR-1” (manufactured by Unitika Ltd.) as a support, using a bar coater (No. 1). The product was applied with a drier and dried at 80 ° C. for 5 minutes using a drier to obtain a 25 μm-thick insulating resin film 3 (content of inorganic filler: 48.6% by mass).
An evaluation substrate 3 was manufactured in the same manner as in Example 1 using the obtained insulating resin film 3.
Using the insulating resin film 3 or the evaluation substrate 3, the coefficient of thermal expansion, the surface roughness, and the adhesive strength with the conductor layer were measured in accordance with the above-described methods. Table 1 shows the results.
表1中の実施例1から、本発明の構成を有する絶縁樹脂フィルムは、低熱膨張率でありながら、低表面粗さで、導体層との高い接着強度を示すことが確認できた。
一方、比較例1より、無機充填材の含有量が少ない単層の絶縁樹脂フィルムを用いた場合、実施例1と同等の接着強度を有するが、熱膨張率が大きくなることが確認できた。また、比較例2に示すように、実施例1と同等量の無機充填材を含む絶縁樹脂フィルムを単層で用いた場合、実施例1と比較して表面粗さが大きくなり、且つ接着強度が大幅に低下することが確認できた。
From Example 1 in Table 1, it was confirmed that the insulating resin film having the configuration of the present invention had a low coefficient of thermal expansion, a low surface roughness, and a high adhesive strength to the conductor layer.
On the other hand, from Comparative Example 1, it was confirmed that when a single-layer insulating resin film having a small content of the inorganic filler was used, the adhesive strength was the same as that of Example 1, but the coefficient of thermal expansion was large. Further, as shown in Comparative Example 2, when the insulating resin film containing the same amount of the inorganic filler as in Example 1 was used in a single layer, the surface roughness was larger than in Example 1, and the adhesive strength was higher. Was significantly reduced.
本発明の絶縁樹脂フィルムは、低熱膨張率でありながら低表面粗さで導体層との高い接着強度を有するため、電子機器用の多層プリント配線板の製造に有用である。 INDUSTRIAL APPLICABILITY The insulating resin film of the present invention has a low coefficient of thermal expansion while having a low surface roughness and a high adhesive strength to a conductor layer.
Claims (9)
(A2)熱硬化性樹脂としてビフェニルアラルキルノボラック型エポキシ樹脂、(B2)硬化剤、(C2)硬化促進剤及び(D2)無機充填材を含有してなる熱硬化性樹脂組成物(2)であって、該熱硬化性樹脂組成物(2)の固形分に対する(D2)無機充填材の含有量が60〜80質量%である熱硬化性樹脂組成物(2)を含有してなる第二層を前記第一層上に形成してなり、第一層と第二層の全体の膜厚が15〜35μmである、絶縁樹脂フィルム。 (A1) biphenyl aralkyl novolak type epoxy resin as a thermosetting resin, (B1) a curing agent, meet (C1) curing accelerator and (D1) a thermosetting resin composition containing the inorganic filler (1) The first layer containing the thermosetting resin composition (1) in which the content of the inorganic filler (D1) is 20 to 40% by mass based on the solid content of the thermosetting resin composition (1) and (A2) biphenyl aralkyl novolak type epoxy resin as a thermosetting resin, (B2) a curing agent, (C2) a curing accelerator and (D2) comprising an inorganic filler thermosetting resin composition (2) Wherein the content of the inorganic filler (D2) with respect to the solid content of the thermosetting resin composition (2) is 60 to 80% by mass, and the thermosetting resin composition (2) contains Two layers are formed on the first layer, the first layer And an insulating resin film having a total thickness of the second layer of 15 to 35 μm.
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