JP6616947B2 - ハイパワー高周波数スイッチ素子用バイアス回路 - Google Patents

ハイパワー高周波数スイッチ素子用バイアス回路 Download PDF

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Publication number
JP6616947B2
JP6616947B2 JP2015041269A JP2015041269A JP6616947B2 JP 6616947 B2 JP6616947 B2 JP 6616947B2 JP 2015041269 A JP2015041269 A JP 2015041269A JP 2015041269 A JP2015041269 A JP 2015041269A JP 6616947 B2 JP6616947 B2 JP 6616947B2
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Japan
Prior art keywords
transistor
series
branch
gate
terminal
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JP2015041269A
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Japanese (ja)
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JP2015213296A (ja
JP2015213296A5 (enExample
Inventor
エフ． キャンベル、チャールズ
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Qorvo US Inc
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Triquint Semiconductor Inc
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Publication of JP2015213296A5 publication Critical patent/JP2015213296A5/ja
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0054—Gating switches, e.g. pass gates

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  • Electronic Switches (AREA)
  • Transceivers (AREA)
JP2015041269A 2014-03-04 2015-03-03 ハイパワー高周波数スイッチ素子用バイアス回路 Active JP6616947B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/196,987 2014-03-04
US14/196,987 US9768770B2 (en) 2014-03-04 2014-03-04 Bias circuit for a high power radio frequency switching device

Publications (3)

Publication Number Publication Date
JP2015213296A JP2015213296A (ja) 2015-11-26
JP2015213296A5 JP2015213296A5 (enExample) 2018-04-12
JP6616947B2 true JP6616947B2 (ja) 2019-12-04

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ID=53884054

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JP2015041269A Active JP6616947B2 (ja) 2014-03-04 2015-03-03 ハイパワー高周波数スイッチ素子用バイアス回路

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US (1) US9768770B2 (enExample)
JP (1) JP6616947B2 (enExample)
DE (1) DE102015002250A1 (enExample)
TW (1) TWI672009B (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9768770B2 (en) * 2014-03-04 2017-09-19 Qorvo Us, Inc. Bias circuit for a high power radio frequency switching device
KR102428337B1 (ko) * 2018-01-24 2022-08-01 삼성전기주식회사 스위칭 응답 지연을 개선한 고주파 스위치 회로 및 장치
KR102583788B1 (ko) * 2018-07-09 2023-09-26 삼성전기주식회사 누설 전류 저감형 고주파 스위치 장치
US11575373B2 (en) * 2018-10-18 2023-02-07 Qorvo Us, Inc. Switch circuitry
US10680599B1 (en) * 2019-04-03 2020-06-09 Infineon Technologies Ag RF switch with compensation
US11075661B1 (en) * 2020-03-03 2021-07-27 Psemi Corporation Method and apparatus to optimize power clamping
US11677392B2 (en) 2021-04-16 2023-06-13 Analog Devices International Unlimited Company Bias networks for DC or extended low frequency capable fast stacked switches
CN115865122B (zh) * 2022-11-18 2023-08-29 优镓科技(苏州)有限公司 一种氮化镓射频开关结构和通信基站

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5588544U (enExample) * 1978-12-13 1980-06-18
JPH05336732A (ja) * 1992-06-02 1993-12-17 Toshiba Corp Ｉｇｂｔゲート回路
TW410501B (en) * 1998-07-02 2000-11-01 Ind Tech Res Inst A high power transistor switch with low transmission loss
US6804502B2 (en) * 2001-10-10 2004-10-12 Peregrine Semiconductor Corporation Switch circuit and method of switching radio frequency signals
JP4009553B2 (ja) * 2002-05-17 2007-11-14 日本電気株式会社 高周波スイッチ回路
EP1914890A1 (en) * 2005-08-09 2008-04-23 Hitachi Metals Precision, Ltd. High-frequency switch circuit
US7755222B2 (en) 2006-01-09 2010-07-13 Raytheon Company Method and system for high power switching
JP2008017416A (ja) * 2006-07-10 2008-01-24 Matsushita Electric Ind Co Ltd 高周波スイッチ装置
US7852172B2 (en) * 2008-07-18 2010-12-14 Anadigics Inc. High-power switch
JP5426434B2 (ja) * 2010-03-05 2014-02-26 株式会社東芝 送受信モジュール
US8624675B2 (en) * 2010-03-25 2014-01-07 Lloyd Lautzenhiser Method and system for providing automatic gate bias and bias sequencing for field effect transistors
JP2012019500A (ja) * 2010-06-10 2012-01-26 Panasonic Corp バイアス回路および無線通信機
WO2013084740A1 (ja) * 2011-12-09 2013-06-13 株式会社村田製作所 半導体装置
US9160328B2 (en) * 2012-07-07 2015-10-13 Skyworks Solutions, Inc. Circuits, devices, methods and applications related to silicon-on-insulator based radio-frequency switches
US8923782B1 (en) * 2013-02-20 2014-12-30 Triquint Semiconductor, Inc. Switching device with diode-biased field-effect transistor (FET)
US9768770B2 (en) * 2014-03-04 2017-09-19 Qorvo Us, Inc. Bias circuit for a high power radio frequency switching device

Also Published As

Publication number Publication date
JP2015213296A (ja) 2015-11-26
TWI672009B (zh) 2019-09-11
DE102015002250A1 (de) 2015-09-10
TW201535988A (zh) 2015-09-16
US20150256172A1 (en) 2015-09-10
US9768770B2 (en) 2017-09-19

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