JP6612869B2 - マイクロｌｅｄデバイス - Google Patents

マイクロｌｅｄデバイス Download PDF

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Publication number
JP6612869B2
JP6612869B2 JP2017527777A JP2017527777A JP6612869B2 JP 6612869 B2 JP6612869 B2 JP 6612869B2 JP 2017527777 A JP2017527777 A JP 2017527777A JP 2017527777 A JP2017527777 A JP 2017527777A JP 6612869 B2 JP6612869 B2 JP 6612869B2
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JP
Japan
Prior art keywords
μled
light
mesa structure
light source
mesa
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2017527777A
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English (en)
Japanese (ja)
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JP2017535966A5 (OSRAM
JP2017535966A (ja
Inventor
ブレナン、ビンセント
パーシバル、クリストファー
ヒューズ、パドレイグ
プルシェ、アラン
オワイエ、セリーヌ
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Meta Platforms Technologies LLC
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Facebook Technologies LLC
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Publication of JP2017535966A5 publication Critical patent/JP2017535966A5/ja
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings

Landscapes

  • Led Devices (AREA)
  • Led Device Packages (AREA)
JP2017527777A 2014-11-24 2015-11-23 マイクロｌｅｄデバイス Expired - Fee Related JP6612869B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GBGB1420860.7A GB201420860D0 (en) 2014-11-24 2014-11-24 Micro-LED device
GB1420860.7 2014-11-24
PCT/EP2015/077332 WO2016083289A1 (en) 2014-11-24 2015-11-23 Micro-led device

Publications (3)

Publication Number Publication Date
JP2017535966A JP2017535966A (ja) 2017-11-30
JP2017535966A5 JP2017535966A5 (OSRAM) 2018-12-27
JP6612869B2 true JP6612869B2 (ja) 2019-11-27

Family

ID=52292442

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017527777A Expired - Fee Related JP6612869B2 (ja) 2014-11-24 2015-11-23 マイクロｌｅｄデバイス

Country Status (7)

Country Link
US (3) US10074774B2 (OSRAM)
EP (1) EP3224873B1 (OSRAM)
JP (1) JP6612869B2 (OSRAM)
KR (1) KR102447697B1 (OSRAM)
CN (1) CN107112388B (OSRAM)
GB (1) GB201420860D0 (OSRAM)
WO (1) WO2016083289A1 (OSRAM)

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Also Published As

Publication number Publication date
EP3224873A1 (en) 2017-10-04
US10854782B2 (en) 2020-12-01
US20170271557A1 (en) 2017-09-21
CN107112388A (zh) 2017-08-29
CN107112388B (zh) 2020-02-14
JP2017535966A (ja) 2017-11-30
WO2016083289A1 (en) 2016-06-02
KR20170089888A (ko) 2017-08-04
US20190013438A1 (en) 2019-01-10
US10490699B2 (en) 2019-11-26
KR102447697B1 (ko) 2022-09-29
US20200044114A1 (en) 2020-02-06
EP3224873B1 (en) 2020-04-22
US10074774B2 (en) 2018-09-11
GB201420860D0 (en) 2015-01-07

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