JP6598302B2 - 信号処理回路 - Google Patents
信号処理回路 Download PDFInfo
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- JP6598302B2 JP6598302B2 JP2016023303A JP2016023303A JP6598302B2 JP 6598302 B2 JP6598302 B2 JP 6598302B2 JP 2016023303 A JP2016023303 A JP 2016023303A JP 2016023303 A JP2016023303 A JP 2016023303A JP 6598302 B2 JP6598302 B2 JP 6598302B2
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- 238000012545 processing Methods 0.000 title claims description 74
- 230000005540 biological transmission Effects 0.000 claims description 49
- 238000001514 detection method Methods 0.000 claims description 44
- 238000000034 method Methods 0.000 claims description 3
- 230000008569 process Effects 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 16
- 230000006866 deterioration Effects 0.000 description 7
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- 238000012986 modification Methods 0.000 description 5
- 230000010354 integration Effects 0.000 description 4
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- 238000004891 communication Methods 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/195—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using superconductive devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
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- H—ELECTRICITY
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- H10N60/00—Superconducting devices
- H10N60/10—Junction-based devices
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- G—PHYSICS
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- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
- G01J2001/4413—Type
- G01J2001/442—Single-photon detection or photon counting
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
- G01J2001/4446—Type of detector
- G01J2001/446—Photodiode
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- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Logic Circuits (AREA)
Description
図1は、実施形態の多ピクセルSSPD用の信号処理回路の一例を示す図である。多ピクセルSSPD11のピクセル数及び配列は任意であるが、図1では、多ピクセルSSPD11中の64個のSSPD(SNM:N=1〜8、M=1〜8)がマトリクス状に配列されている例が示されている。なお、信号処理回路10の構成を簡略化する趣旨で、図1において、多ピクセルSSPD11の第1列の8個のSSPD(S11・・・S18)のそれぞれに対応する8本の伝送経路25のみを図示し、以下、これらの信号処理について説明する。なお、第2列以降のSSPDの信号処理についても同様である。
図2は、実施形態の第1実施例による信号処理回路の一例を示す図である。
図5は、実施形態の第2実施例による信号処理回路の一例を示す図である。
図7は、実施形態の変形例による信号処理回路を備える超伝導単一光子検出システムの一例を示す図である。
10A :信号処理回路
10B :信号処理回路
10C :信号処理回路
20 :時間情報生成回路
21 :アドレス情報生成回路
21A :エンコーダ回路
21B :パルス位置変調回路
22A :遅延回路
22B :遅延回路
25 :伝送経路
25A :第1伝送経路
25B :第2伝送経路
26 :分岐部
27 :ビット列統合回路
28 :冷凍機
100 :超伝導単一光子検出システム
Claims (4)
- 複数の超伝導単一光子検出器(以下、SSPD)から出力される検出信号の処理に用いられ、超伝導デジタル論理回路により構成される信号処理回路であって、
前記複数のSSPDのそれぞれに接続されている複数の伝送経路と、
前記伝送経路のそれぞれを第1伝送経路と第2伝送経路とに分岐する分岐部と、
前記第1伝送経路に接続されている時間情報生成回路と、
前記第2伝送経路に接続されているアドレス情報生成回路と、
を備え、
前記時間情報生成回路は、前記複数のSSPDの検出信号に基づいて、前記複数のSSPDへ光子が入射した時間を特定するための時間(タイミング)情報信号を出力し、
前記アドレス情報生成回路は、前記複数のSSPDの検出信号に基づいて、前記複数のSSPDのうちの光子が入射したSSPDを特定するためのアドレス情報信号を出力する信号処理回路。 - 前記時間情報生成回路は、前記複数のSSPDの検出信号の論理和を取ることで前記時間情報信号を出力するように構成された回路である請求項1に記載の信号処理回路。
- 前記アドレス情報生成回路として、前記複数のSSPDの検出信号を所定ビット数のバイナリコードに変換し、前記バイナリコードに対応するパルス列を生成するように構成されたエンコーダ回路を備える請求項1又は2に記載の信号処理回路。
- 前記アドレス情報生成回路として、前記第2伝送経路毎に、前記第2伝送経路を伝わる検出信号の遅延時間を異ならせるように構成されたパルス位置変調回路を備える請求項1又は2に記載の信号処理回路。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016023303A JP6598302B2 (ja) | 2016-02-10 | 2016-02-10 | 信号処理回路 |
EP17750031.1A EP3415880B1 (en) | 2016-02-10 | 2017-01-16 | Signal processing circuit |
CN201780009389.8A CN108496065B (zh) | 2016-02-10 | 2017-01-16 | 信号处理电路 |
PCT/JP2017/001273 WO2017138306A1 (ja) | 2016-02-10 | 2017-01-16 | 信号処理回路 |
US16/076,791 US20190049294A1 (en) | 2016-02-10 | 2017-01-16 | Signal processing circuit |
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JP2016023303A JP6598302B2 (ja) | 2016-02-10 | 2016-02-10 | 信号処理回路 |
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JP2017142146A JP2017142146A (ja) | 2017-08-17 |
JP6598302B2 true JP6598302B2 (ja) | 2019-10-30 |
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US (1) | US20190049294A1 (ja) |
EP (1) | EP3415880B1 (ja) |
JP (1) | JP6598302B2 (ja) |
CN (1) | CN108496065B (ja) |
WO (1) | WO2017138306A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023008523A1 (ja) | 2021-07-30 | 2023-02-02 | 国立研究開発法人情報通信研究機構 | 超伝導単一光子検出システム |
Families Citing this family (1)
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JP7344499B2 (ja) * | 2019-03-01 | 2023-09-14 | 国立大学法人横浜国立大学 | 光子検出装置 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
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US8139050B2 (en) * | 1995-07-20 | 2012-03-20 | E Ink Corporation | Addressing schemes for electronic displays |
US6812464B1 (en) * | 2000-07-28 | 2004-11-02 | Credence Systems Corporation | Superconducting single photon detector |
JP4059860B2 (ja) * | 2004-03-11 | 2008-03-12 | 三井造船株式会社 | 微弱光検出方法および装置 |
US7638751B2 (en) * | 2007-05-09 | 2009-12-29 | Massachusetts Institute Of Technology | Multi-element optical detectors with sub-wavelength gaps |
JP5419122B2 (ja) * | 2008-03-25 | 2014-02-19 | 独立行政法人情報通信研究機構 | 信号処理およびインターフェイス回路 |
US8405038B2 (en) * | 2009-12-30 | 2013-03-26 | General Electric Company | Systems and methods for providing a shared charge in pixelated image detectors |
JP5846626B2 (ja) * | 2011-07-12 | 2016-01-20 | 国立研究開発法人情報通信研究機構 | 超伝導単一光子検出システムおよび超伝導単一光子検出方法 |
CN102538988B (zh) * | 2012-02-08 | 2014-05-07 | 南京邮电大学 | 一种单光子雪崩二极管成像器件的淬灭与读出电路 |
US9702758B2 (en) * | 2014-06-09 | 2017-07-11 | Kiskeya Microsystems Llc | Systems and methods for readout of event-driven pixels |
US20160003672A1 (en) * | 2014-07-25 | 2016-01-07 | Varun Verma | Multiplexer for single photon detector, process for making and use of same |
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2016
- 2016-02-10 JP JP2016023303A patent/JP6598302B2/ja active Active
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2017
- 2017-01-16 WO PCT/JP2017/001273 patent/WO2017138306A1/ja active Application Filing
- 2017-01-16 EP EP17750031.1A patent/EP3415880B1/en active Active
- 2017-01-16 US US16/076,791 patent/US20190049294A1/en not_active Abandoned
- 2017-01-16 CN CN201780009389.8A patent/CN108496065B/zh active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2023008523A1 (ja) | 2021-07-30 | 2023-02-02 | 国立研究開発法人情報通信研究機構 | 超伝導単一光子検出システム |
Also Published As
Publication number | Publication date |
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EP3415880B1 (en) | 2020-12-30 |
EP3415880A4 (en) | 2019-12-04 |
JP2017142146A (ja) | 2017-08-17 |
CN108496065B (zh) | 2020-04-28 |
CN108496065A (zh) | 2018-09-04 |
US20190049294A1 (en) | 2019-02-14 |
EP3415880A1 (en) | 2018-12-19 |
WO2017138306A1 (ja) | 2017-08-17 |
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