JP6598177B1 - Surface modification method and surface modification apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To accurately specify a replacement gas concentration at a specific point in a discharge region and to surely realize a target reforming effect. A discharge electrode is provided between the discharge electrode and the counter electrode by energy of plasma generated by a gas displacement discharge generated between the discharge electrode and the counter electrode facing the discharge electrode. In the surface modification apparatus for modifying the surface of the processing object F, the discharge electrode is provided with a gas intake small hole 9 that opens into the discharge region E2 of the gas replacement discharge and takes in the gas in the discharge region. The small holes 9 for gas intake are connected to gas measuring means 11 for measuring the replacement gas concentration. [Selection] Figure 1

Description

  The present invention relates to a surface modification method and a surface modification apparatus for supplying a replacement gas into a chamber and modifying a surface to be processed with plasma energy generated by gas replacement discharge.

  The conventional surface modification apparatus shown in FIG. 7 has a discharge electrode 3 in a chamber 2 to which a replacement gas such as nitrogen gas is supplied. A grounded processing roller 1 facing the discharge electrode 3 is provided. The processing roller 1 functions as a counter electrode and has a function of conveying the film F to be processed.

Further, a gas intake port 4 at the tip of a pipe connected to a gas analyzer (not shown) is located in the approximate center of the chamber 2. The gas sucked at the gas intake 4 is analyzed to measure the concentration of the replacement gas in the chamber 2.
Reference numeral 5 denotes a replacement gas supply pipe for supplying a replacement gas into the chamber 2.

When a replacement gas is supplied into the chamber 2 as described above and a high voltage is applied to the discharge electrode 3, a gas replacement discharge occurs between the discharge electrode 3 and the processing roller 1, and the generated plasma energy The surface of the film F is modified.
In such a surface reforming apparatus, the concentration of the replacement gas in the discharge region E1 affects the effect of the reforming process on the film F. If the replacement gas concentration does not reach the predetermined concentration, the discharge may become unstable and the plasma energy may be insufficient. In addition, if the oxygen concentration is increased due to the lower substitution gas concentration, the generation of ozone and the generation of nitrogen oxides in the discharge region increases, which may adversely affect the film surface.

In addition, when nitrogen gas is supplied as a replacement gas to add a nitrogen-derived functional group to the film surface, the target functional group cannot be attached if the nitrogen is insufficient.
Furthermore, there is a process in which inconvenience arises because the replacement gas concentration is too high.
As described above, when the purpose of the strict reforming process is to be performed, the replacement gas concentration in the discharge region E1 must be strictly controlled.

  Therefore, in the conventional apparatus of FIG. 7, the replacement gas concentration in the discharge region E <b> 1 is estimated based on the analysis result of the gas taken in from the gas inlet 4 in the chamber 2. Then, the supply amount of the replacement gas is controlled in accordance with the estimated replacement gas concentration.

JP 2001-246242 A JP 2005-076063 A Japanese Utility Model Publication No.59-440

In the conventional surface reforming apparatus as described above, the replacement gas concentration in the discharge area E1 is estimated from the analysis result of the gas taken in from the gas intake port 4 located away from the discharge area E1, The analogy value does not always coincide with the replacement gas concentration in the local discharge region E1.
For example, since the outside air flows into the chamber 2 as the entrained flow a on the surface of the moving film F, the concentration of the replacement gas in the discharge area E1 tends to be lower than the other portions of the chamber 2. is there.
If the concentration of the replacement gas in the discharge region E1 is low, there is a problem that the intended treatment effect cannot be obtained.

Patent Document 3 describes an apparatus that sucks gas from a long slit continuous in the length direction of a rod-like electrode in order to peel the entrained flow flowing into the discharge region from the surface to be processed. It is also conceivable to apply such a slit of the discharge electrode to a replacement gas intake port. However, the substitution gas concentration measured by sucking gas from the slit over the entire length of the rod-like electrode in this way is an average gas concentration over the entire length of the slit, and accurately detects the gas concentration at a specific point. It is not possible.
Depending on the supply structure of the replacement gas, even if the average value of the gas concentration is a required concentration, a place where the required replacement gas concentration is not reached or a portion where the replacement gas concentration becomes abnormally high may be formed. Sometimes. However, if only the average value can be measured, even if there is a difference in the concentration of the replacement gas depending on the location in the discharge region E1, this cannot be grasped, and there is a possibility that the processing will be partially defective. .

  An object of the present invention is to provide a surface reforming method and a surface reforming apparatus that can accurately specify the replacement gas concentration at a specific point in the discharge region and can reliably achieve the target reforming effect.

A first aspect of the present invention is surface modification of the discharge electrode and the counter electrode supplied replacement gas between plasma at a discharge zone between the discharge electrode and the counter electrode, to modify the surface to be processed with an energy of the plasma In the quality method, a process for specifying the measurement point of the replacement gas concentration in the discharge region, a process for setting the position of the gas intake small hole corresponding to the specified measurement point, and the gas intake small hole A process for measuring the concentration of the replacement gas taken in from the above and a process for controlling the supply amount of the replacement gas in accordance with the measured value of the replacement gas are executed.

  The second invention includes a process of setting a plurality of the measurement points, a process of associating a separate gas intake small hole with each of the measurement points, and a process of measuring a replacement gas concentration at each of the plurality of measurement points. The process of identifying the lowest measurement point that has detected the lowest replacement gas concentration or the highest measurement point that has detected the highest replacement gas concentration, and the replacement gas concentration at the lowest measurement point or highest measurement point. And a process for controlling the gas supply to lead to a reference value.

The third invention example Bei discharge electrodes, by the energy of plasma generated by gas replacement discharge which is generated between the counter electrode facing the discharge electrode, the treatment target between the discharge electrode and the counter electrode In the surface modification apparatus for modifying the surface of the gas, the discharge electrode opens into the discharge region of the gas replacement discharge and takes in the gas in the discharge region, and measures the concentration of the substituted gas in the taken-in gas A small hole for gas intake connected to the means is provided.
In the present invention, the fact that the small holes for gas intake are open in the discharge area not only means that there is an opening in the discharge area, but also faces the discharge area in the vicinity of the discharge area and can take in gas in the discharge area. The case where it opens to the position is also included.

According to a fourth aspect of the present invention, the discharge electrode has a size corresponding to an object to be treated, and the discharge electrode includes a plurality of the small holes for gas intake, and the small holes for gas intake are the discharge electrodes. Are formed at a predetermined interval in a range of the size of.
Note that the size of the discharge electrodes is the length and area of a portion facing the discharge area a discharge electrode.
The predetermined interval is an interval at which a gas taken in from a specific gas intake small hole can be distinguished from a gas taken in from an adjacent gas intake small hole without interference.

  According to a fifth aspect of the present invention, there is provided a replacement gas supply amount control means for controlling the supply amount of the replacement gas based on the replacement gas concentration of the gas taken in from the gas intake small hole.

According to the first invention, the replacement gas concentration at a specific point in the discharge region can be measured, and the supply amount of the replacement gas can be controlled according to the measurement value at the measurement point.
In particular, the measurement point is set to the lowest measurement point with the lowest replacement gas concentration or the highest measurement point with the highest replacement gas concentration as the measurement point, and the replacement gas is based on the gas concentration at this lowest or highest measurement point. By controlling the supply amount, it is possible to maintain the replacement gas concentration suitable for processing by controlling the minimum value or the maximum value of the replacement gas concentration in the discharge region.

Further, if the necessary minimum replacement gas is supplied according to the actually measured replacement gas concentration at the lowest measurement point, the replacement gas is supplied more than necessary and is not wasted.
On the other hand, if the highest measurement point is taken as a measurement point and controlled so that this highest measurement point becomes the reference value, the replacement gas concentration in the entire discharge area will not be too high, and if the replacement gas concentration is too high, problems will occur. Such processing can also be realized stably.

According to the second aspect of the present invention, the replacement gas concentration at a plurality of points in the discharge area can be measured by pinpoints, and the position of the lowest measurement point or the highest measurement point can be accurately specified.
In addition, a stable reforming process can be realized by controlling the gas supply amount according to the specified minimum measurement point or the measured value of the maximum measurement point.

  According to the third surface reforming apparatus, the replacement gas concentration at a specific point in the discharge region corresponding to the gas intake small hole can be measured in a pinpoint manner. Therefore, if the supply amount of the replacement gas is controlled according to the measured replacement gas concentration, the replacement gas concentration in the discharge region can be kept appropriate. As a result, the target reforming process can be realized.

According to the fourth aspect of the invention, the replacement gas concentration distribution in the discharge region can be detected by measuring the replacement gas concentration corresponding to the positions of the plurality of gas intake small holes.
Further, the target reforming process can be realized by controlling the supply amount of the replacement gas according to the detected replacement gas concentration distribution. Further, the distribution of the replacement gas concentration can be improved by adjusting the position of the discharge electrode , the supply means of the replacement gas, and the like. If the distribution of the replacement gas concentration is reduced, the entire surface to be processed can be more uniformly reformed while suppressing the consumption of the replacement gas.

  According to the fifth aspect, the supply amount of the replacement gas can be controlled in accordance with the measured value of the replacement gas concentration, and defective reforming can be prevented.

1 is a schematic view of a first embodiment of the present invention. It is a perspective view of the discharge electrode of 1st Embodiment. It is the schematic of 2nd Embodiment. It is a perspective view of the discharge electrode of 3rd Embodiment. It is the schematic of 4th Embodiment. It is the schematic of 5th Embodiment. It is the schematic of the conventional surface modification apparatus.

First to fifth embodiments will be described below. The fourth and fifth embodiments are reference examples of the present invention.
The first embodiment shown in FIGS. 1 and 2 is a surface reforming apparatus for modifying a film F conveyed by a processing roller 1 that is grounded and rotated by the energy of plasma generated by gas displacement discharge. . In the first embodiment, the same reference numerals as those in FIG.
As shown in FIG. 1, a rod-shaped discharge electrode 7 having a length in the width direction of the film F is held by a holding member 6 in the chamber 2.

A replacement gas is supplied to the chamber 2 from a gas supply source (not shown) via a replacement gas supply pipe 5. The gas supply path between the gas supply source and the chamber 2 is provided with a replacement gas supply amount control means (not shown) for controlling the supply amount.
In the first embodiment, the holding member 6 and the discharge electrode 7 constitute the electrodes structure. The electrode structure is attached to the ceiling surface of the chamber 2 via the holding member 6, but a connecting member or the like may or may not be interposed between the holding member 6 and the ceiling surface. .

Further, a high voltage source (not shown) is connected to the discharge electrode 7 so that a discharge is generated in a discharge region E2 between the tip of the discharge electrode 7 and the grounded processing roller 1 serving as a counter electrode.
As shown in FIGS. 1 and 2, a pair of convex portions 7a and 7a projecting toward the film F are continued at the distal end of the discharge electrode 7 in the length direction of the discharge electrode 7, and the convex portions 7a and 7a. Among these, the points where the distance to the processing roller 1 is the shortest are the discharge portions 7b and 7b, and these discharge portions 7b and 7b are continuous in the length direction.

  Since the distance between the discharge portions 7b and 7b and the processing roller 1 is minimized, the electric field strength between the discharge portions 7b and 7b and the processing roller 1 is the highest when a high voltage is applied. A discharge region E2 is formed by this strong electric field. In addition, both the said discharge parts 7b and 7b equalize the opposing space | interval with the processing roller 1. FIG. In this way, the discharge area E2 can be widened by equalizing the facing distance between the two.

Further, a concave portion 7c continuous in the length direction is formed between the convex portions 7a and 7a, and the inside of the concave portion 7c is used as a non-discharge portion.
In the first embodiment, a gas intake hole 9 is formed in the bottom surface of the recess 7c, and a gas passage 8 is formed in the discharge electrode 7 with the one end side opening being the gas intake hole 9. Has been. An opening 10 on the other end side of the gas passage 8 is provided on the side surface 7 d of the discharge electrode 7. Thus, since the small hole 9 for gas intake is opened in the non-discharge portion, this opening does not affect the discharge of the discharge portion 7b.

The concave portion 7c formed between the discharge portions 7b and 7b is opposed to the discharge region E2 in the vicinity of the discharge region E2 generated between the discharge portions 7b and 7b and the processing roller 1. Therefore, the gas intake small hole 9 opened in the recess 7c also faces the discharge region E2.
A pipe 12 communicating with a gas measuring means 11 installed outside the chamber 2 is connected to the opening 10 of the discharge electrode 7. The gas measuring means 11 has a suction function for taking in the gas from the gas taking-in small holes 9 and a gas analysis function for specifying the component and concentration of the taken-in gas, and detects the substitution gas concentration in the taken-in gas. It has a function to do.

Therefore, in the first embodiment, the gas in the discharge region E2 can be directly taken in from the gas taking-in small hole 9 opened in the concave portion 7c and analyzed by the gas measuring means 11.
The opening position of the small hole 9 for gas intake corresponds to the measurement point of the present invention.
Also in the apparatus of the first embodiment, the entrained flow a flows in from the outside of the chamber 2 as in the prior art, and the entrained flow a and the replacement gas are mixed to form a space between the discharge portions 7b and 7b and the processing roller 1. It flows into the discharge area E2. Therefore, in the discharge region E2, the replacement gas concentration may be lower than other portions in the chamber 2.

However, in the first embodiment, since the gas in the discharge area E2 is taken from the gas intake small hole 9 which is a measurement point, the pinpoint replacement gas concentration in the discharge area E2 can be accurately measured.
In particular, in the first embodiment, since the gas intake small hole 9 is formed in the concave portion 7c formed between the discharge portions 7b and 7b, the opening of the gas intake small hole 9 is discharged. It is surrounded by the parts 7b and 7b, so that the gas in the discharge region E2 can be reliably taken in and the replacement gas concentration can be measured more accurately.

Further, based on the measured replacement gas concentration, the replacement gas supply amount control means controls the supply amount of the replacement gas, thereby realizing the target processing.
In addition, since the discharge portions 7b and 7b are continuous in the length direction of the discharge electrode 7, the discharge region E2 is formed long in the length direction of the discharge electrode 7, but the flow amount of the entrained flow a is different, The flow of the replacement gas may be different, and the distribution of the replacement gas concentration may occur depending on the position in the length direction of the discharge region E2. Therefore, when controlling the supply amount of the replacement gas based on the measured value of the replacement gas concentration, it is important at which position the replacement gas concentration is measured.

And since the opening position of the small hole 9 for gas intake respond | corresponds to a measurement point as mentioned above, a measurement point changes with the position of this opening. If the position most suitable for measuring the gas concentration is specified in advance and the small hole 9 for gas intake is opened there, the replacement gas concentration suitable for the processing purpose can be measured, and the control of the supply amount of the replacement gas can be performed. it can.
The position of the optimum measurement point can be specified according to the distribution of the actually measured replacement gas concentration.
Further, the distribution of the replacement gas concentration can be estimated from the structure of the chamber, the position of the supply port of the replacement gas, and the like. In such a case, it is not necessary to actually measure.

For example, if the gas intake small hole 9 is opened at the lowest measurement point where the replacement gas concentration is lowest, the measurement standard becomes the lowest gas concentration. On the other hand, if the gas intake small hole 9 is opened at the highest measurement point where the replacement gas concentration is the highest, the measurement standard becomes the highest gas concentration. Moreover, the measurement point which opens the small hole for gas intake between the lowest measurement point and the highest measurement point can be set.
In any case, the position of the measurement point can be freely selected according to the processing purpose.

For example, when it is desired to maintain the replacement gas concentration in the entire discharge region at a reference value or higher, the gas intake small hole 9 is opened at the lowest measurement point where the gas concentration is the lowest. As described above, if the supply amount of the replacement gas is controlled in accordance with the measured value of the lowest measurement point, the target processing can always be realized with the minimum necessary replacement gas, so that the replacement gas is not wasted.
On the other hand, there is a type of processing in which the target processing cannot be performed when the replacement gas concentration exceeds the reference value. When performing such processing, in order to set the upper limit of the replacement gas concentration, the highest measurement point at which the replacement gas concentration is highest is specified, and the gas intake small hole 9 is opened there. .

In the first embodiment as described above, since the replacement gas concentration in the discharge area E2 can be directly taken in from the gas intake small hole 9 opened in the discharge area, the accurate replacement gas concentration in the discharge area E2 can be measured.
Further, since the gas intake small hole 9 is opened in the non-discharge portion, the opening can maintain a uniform discharge state without affecting the discharge formation.
Furthermore, the opening of the gas intake small hole 9 is surrounded by the discharge portions 7b and 7b, so that the gas in the discharge region E2 can be reliably taken in and the replacement gas concentration can be measured more accurately.

  In the first embodiment, the opening 10 of the gas passage 8 on the side opposite to the gas intake small hole 9 may be provided anywhere as long as it is an electrode structure. For example, the opening 10 may be provided on the end face in the length direction of the discharge electrode 7, or the opening 10 may be provided between the discharge electrode 7 and the holding member 6 or in the holding member 6.

  Further, a plurality of discharge electrodes similar to the discharge electrode 7 may be arranged along the transport direction of the film F. The gas passage 8 and the gas intake small hole 9 may be provided in any of them, or the gas passage 8 and the gas intake small hole 9 may be provided in all the discharge electrodes 7. In the case where a plurality of gas intake small holes 9 are provided, individual gas measuring means 11 are connected to each of them, and the replacement gas concentration is measured pinpoint for each opening position of each gas intake small hole 9. be able to.

The second embodiment shown in FIG. 3 is a surface reforming apparatus in which a pair of rod-shaped discharge electrodes 15 and 16 supported by a rod-shaped support member 13 are provided in the chamber 2 with a space therebetween. In this second embodiment, the discharge electrodes 15 and 16, and the support member 13 interposed therebetween, and the holding member 6 constitutes the collector electrode structure.
The support member 13 is formed with a replacement gas passage 14 connected to a gas supply source (not shown) and a replacement gas supply amount control means. The discharge electrode 15 passes through the opposing gap between the discharge electrodes 15 and 16 from the gas passage 14. , 16 and the processing roller 1 are supplied with replacement gas. Therefore, the replacement gas is directly supplied to discharge areas E3 and E4 described later, and waste can be reduced.
In the second embodiment, the same reference numerals as those in FIG. 1 are used for the same components as those in the first embodiment.

  Moreover, the tip of each discharge electrode 15 and 16 has a pair of convex parts 15a, 15a, 16a, and 16a which have a length in the width direction of the film F in a circular arc shape protruding toward the processing roller 1 which is a counter electrode. Is formed. Discharge portions 15b, 15b, 16b, and 16b are the points at which the distance between the convex portions 15a, 15a, 16a, and 16a and the processing roller 1 is the shortest. The electric field strength is increased between the discharge unit 15b and the processing roller 1, and between the discharge unit 16b and the processing roller 1, and discharge regions E3 and E4 are formed, respectively.

Moreover, the recessed part formed in the boundary of a pair of convex part 15a, 15a and the recessed part formed in the boundary of convex part 16a, 16a are non-discharge parts. The small holes 9 for gas intake are opened in the recesses that are non-discharge portions.
The discharge electrodes 15 and 16 are provided with gas passages 8 and 8 each having the gas intake small hole 9 as one end. In the gas passages 8, 8, openings 10, 10 opposite to the gas intake small holes 9, 9 are provided on the side surfaces 15 c, 16 c of the discharge electrodes 15, 16. The gas measuring devices 11 and 11 are connected to the openings 10 and 10 via the pipes 12 and 12, respectively.
In addition, the discharge parts 15b and 16b and the non-discharge part in this 2nd Embodiment are also continued in the length direction of the discharge electrodes 15 and 16.

Also in the surface reforming apparatus of the second embodiment, the entrained flow a of the film F conveyed by the processing roller 1 flows into the discharge areas E3 and E4 together with the replacement gas. Can be taken in from the small holes 9 for gas intake and the concentration of the replacement gas can be measured.
Since the gas intake small hole 9 is opened between the pair of discharge portions 15b, 15b, 16b, 16b at the tips of the discharge electrodes 15, 16, the gas in the discharge areas E3, E4 can be directly taken in, It is possible to accurately measure the pinpoint replacement gas concentration in the discharge regions E3 and E4.

Further, since the discharge electrodes 15 and 16 are located on the upstream side and the downstream side of the replacement gas passage 14 along the transport direction of the film F, the replacement gas at the position of the pair of gas intake small holes 9 and 9 is provided. It is also possible to grasp the influence on the replacement gas concentration due to the movement of the film F from the concentration.
Furthermore, also in the second embodiment, if the supply amount of the replacement gas is controlled based on the measurement result of the gas intake small holes 9, the target reforming process can be realized stably. it can.
In the second embodiment, since the replacement gas is directly supplied from the replacement gas passage 14 formed in the support member 13 to the discharge areas E3 and E4, the replacement gas flows out of the discharge areas E3 and E4 and is wasted. Can be prevented.

The opening 10 on the opposite side of the gas intake hole 9 in the gas passage 8 may be provided anywhere as long as the gas intake hole 9 can be connected to the measuring device 11.
Further, the gas intake small hole 9 may be formed only in one of the discharge electrodes 15 and 16.
Further, the number of discharge electrodes is not limited to a pair, and the number of discharge electrodes in which the gas intake small holes 9 are formed is not particularly limited among the plurality of discharge electrodes.

In the third embodiment shown in FIG. 4, a plurality of gas intake small holes 9 are provided in the non-discharge portion 7 c of the discharge electrode 7 at predetermined intervals in the length direction, and the gas passage 8 and the opening are respectively provided. The other configuration is the same as that of the first embodiment shown in FIG.
In addition, the gas taken in from the specific gas intake small hole 9 and the gas taken in from the adjacent gas intake small hole 9 do not interfere between the gas intake small holes 9 and 9. It is arranged with a distinguishable interval. Therefore, from each gas intake small hole 9, only the gas in the area | region facing the said gas intake small hole 9 is taken in, and pinpoint substitution gas concentration can be measured correctly.

In this way, in the third embodiment, the pinpoint replacement gas concentration corresponding to the plurality of gas intake small holes 9 along the length of the rod-like discharge electrode 7 can be measured. The replacement gas concentration distribution in the discharge region extending in the length direction of the electrode 7 can be grasped.
Therefore, the target reforming process can be realized by controlling the supply amount of the replacement gas while monitoring the replacement gas concentration at all measurement points.

Also, from the multiple measurement points, specify the lowest measurement point with the lowest replacement gas concentration and the highest measurement point with the highest replacement gas concentration, and supply the replacement gas so that the replacement gas concentration becomes the reference value. Can also be controlled.
Note that the gas concentration distribution may change during the operation of the apparatus, and the lowest measurement point and the highest measurement point may move. In particular, the larger the processing width such as the width of the film F, the more easily the substitution gas concentration distribution fluctuates. However, if a plurality of gas intake small holes 9 are provided as in the third embodiment, the gas concentration distribution can be monitored. Therefore, if the replacement gas supply amount is controlled based on the gas concentration distribution, a stricter replacement gas concentration can be obtained. Can be controlled.

  In FIG. 4, the plurality of gas intake small holes 9 are arranged in a line along the length direction of the discharge electrode 7, but the arrangement of the gas intake small holes 9 is changed depending on the shape of the discharge electrode. You can also. For example, when the portion of the discharge electrode that faces the discharge region is planar, a plurality of gas intake small holes 9 may be disposed on the surface. If the gas intake small holes 9 are arranged in the plane, the replacement gas concentration distribution within a predetermined area of the discharge region can also be measured.

In the first to third embodiments, the gas intake small holes 9 are opened in the non-discharge portion so that the openings do not hinder uniform discharge formation. However, the small holes 9 for gas intake may be formed in the discharge part if the disturbance of the discharge can be allowed. In short, the gas intake small hole 9 may be provided anywhere on the discharge electrode as long as the gas intake small hole 9 faces the discharge area and can take in the gas in the discharge area.
Further, the non-discharge portion where the gas intake small hole 9 is opened may be a position other than the discharge portion and facing the discharge region so that the gas in the discharge region can be taken in, and between the discharge portions as described above. It does not restrict to the recessed part formed.

In the fourth embodiment shown in FIG. 5, the discharge electrode 17 and the cover members 18 and 19 on both sides thereof are held by the holding member 6 attached to the ceiling surface of the chamber 2. A support member 20 is interposed between the discharge electrode 17 and the cover members 18 and 19, and a certain gap is maintained between the cover members 18 and 19 and the discharge electrode 17.
The discharge electrode 17 is a rod-like electrode having a length in the width direction of the film F as in the other embodiments. The discharge electrode 17 is also provided with a pair of discharge portions that are formed with a pair of convex portions at the tip and the distance from the processing roller 1 is the shortest at the tip. Therefore, when a high voltage is applied, a discharge region E5 extending in the width direction of the film F is formed in the facing distance between the discharge part and the processing roller 1.

The cover members 18 and 19 are formed of an insulating material such as resin or ceramic, and are members having a length and a width that cover the discharge electrode 17.
In the fourth embodiment, and the support member 20, discharge electrodes 17, the cover members 18 and 19 and the holding member 6 constitutes the collector electrode structure.
In the fourth embodiment, the constituent elements denoted by the same reference numerals as those in the first embodiment shown in FIG. 1 are the same as those in the first embodiment.

Further, a gas passage 8 is formed in the cover member 18 located on the upstream side in the moving direction of the film F with respect to the discharge electrode 17. As in the first embodiment shown in FIG. 2, the gas passage 8 has a gas intake small hole 9 opened at one end toward the film F and the other end opened as a gas measuring means via a pipe 12. 11 is connected. The gas intake small hole 9 opens at a position facing the discharge region E5 formed between the tip of the discharge electrode 17 and the processing roller 1.
Thereby, the gas in the discharge region E5 in which the entrained flow a along the surface of the film F and the replacement gas are mixed is taken in from the gas taking-in small holes 9, and can be guided to the gas measuring means 11. . By analyzing the taken-in gas with the gas measuring means 11, the pinpoint replacement gas concentration in the discharge region E5 can be measured.

Therefore, if the supply amount of the replacement gas is controlled by a replacement gas supply means (not shown) based on the measured replacement gas concentration, the target reforming process is realized while maintaining the replacement gas concentration in the discharge region E5 appropriately. can do.
In the fourth embodiment, the gas intake small hole 9 is provided in the cover member 18 provided on the upstream side of the discharge electrode 17. However, the gas intake small hole 9 is provided in the downstream cover member 19. Alternatively, it may be provided on both cover members 18 and 19 to measure the replacement gas concentration on the upstream side and downstream side of the discharge electrode 17.

Further, any one of the cover members 18 and 19 may be omitted.
However, the cover member 18 provided on the upstream side of the discharge electrode 17 adjusts the gas flow in which the entrained flow a flowing in from the outside of the chamber 2 entrains the replacement gas and flows into the discharge region E5, and the gas state in the discharge region E5 Demonstrate the function to stabilize.
Further, the downstream cover member 19 exhibits a function of stabilizing the state of the gas in the discharge region E5 by adjusting the gas flow flowing out from the discharge region E5.

Therefore, providing either one or both of the cover members 18 and 19 has an advantage of stabilizing the state of the gas in the discharge region E5.
Therefore, in the apparatus provided with the cover members 18 and 19 as in the fourth embodiment, the replacement gas concentration measured by taking in from the gas intake small holes 9 is stable, and based on this, the replacement gas in the discharge region E5 is stabilized. Control to keep the concentration at an appropriate level becomes easy. Therefore, the target reforming process can be realized more reliably.

The position and shape of the gas passage 8 formed in the cover members 18 and 19 are not limited to this embodiment. For example, the opening 10 connected to the pipe 12 may be provided between the cover members 18 and 19 and the holding member 6 or in the holding member 6.
Furthermore, in the fourth embodiment, one rod-like discharge electrode 17 is provided between the pair of cover members 18 and 19, but a plurality of discharge electrodes may be provided along the moving direction of the film F.
Furthermore, you may provide the cover members 18 and 19 of 4th Embodiment in the upstream or downstream of the discharge electrode of the said 1st-3rd Embodiment, or both sides.
In addition, a plurality of gas intake small holes 9 may be provided along the length direction of the cover members 18 and 19 to measure the displacement gas distribution in the length direction.

In the fifth embodiment shown in FIG. 6, the electrode structure is configured as follows.
That is, the electrode structure 22 includes an electrode holder 21, a dielectric 24 made of a ceramic pipe held by the electrode holder 21, and a rod-shaped electrode member 23 made of metal provided in the dielectric 24. Consists of.
The electrode holder 21 is fixed to a ceiling surface of a chamber (not shown) directly or indirectly through a connecting member (not shown). Then, similarly to the first embodiment, a gas supply source and a replacement gas supply amount control means (not shown) are connected to this chamber, and a replacement gas is supplied.
In addition, the component which attached | subjected the same code | symbol as 1st Embodiment in FIG. 6 is the same structure as 1st Embodiment.

Further, a gas passage 8 is formed in the electrode holder 21 and one end thereof is opened as a gas intake small hole 9 toward the discharge region E6. Further, the other end of the gas passage 8 is connected to the gas measuring means 11 through the pipe 12 with the opening 10.
Also in the fifth embodiment, by taking in gas from the small holes 9 for taking in gas, the pinpoint replacement gas concentration in the discharge region E6 can be measured.
And the point which can control the supply amount of substitution gas according to the measured value of substitution gas concentration, and can realize the target modification processing stably is the same as other embodiments.

In the first to fifth embodiments, the grounded processing roller 1 constitutes the counter electrode of the present invention. If the counter electrode can generate plasma by gas displacement discharge with the discharge electrode, the roller can be used. It does not have to be.
Further, the counter electrode is not limited to the ground potential. The counter electrode only needs to realize a potential difference that can be discharged with respect to the discharge electrode. For example, a voltage having a reverse polarity to the voltage applied to the discharge electrode may be applied to the counter electrode.

Furthermore, the shape of the portion of the discharge electrode facing the counter electrode may be any shape as long as the discharge portion is formed. As in the first to fourth embodiments, the discharge region can be expanded by including a plurality of discharge units.
Further, the processing target in the surface modification apparatus of the present invention is not limited to the continuous film F as described above. The surface modification apparatus of the present invention can be applied to various treatment objects that move in the discharge region, such as single sheets and plate members.

  In particular, it is suitable for surface modification in which the treatment effect is easily affected by the substitution gas concentration.

1 (counter electrode) processing roller 2 Chang Bas
7, 15 and 16 discharge DENDEN electrode 9 gas take-small hole 11 gas measurement hand stage
F (Process target) Films E2 to E4 discharge area

Claims (5)

In the surface modification method in which the replacement gas supplied between the discharge electrode and the counter electrode is turned into plasma in the discharge region between the discharge electrode and the counter electrode, and the surface of the object to be processed is modified by the energy of the plasma.
A process for identifying the measurement point of the replacement gas concentration in the discharge electrode ;
A process of setting the position of the small hole for gas intake corresponding to the specified measurement point;
A process for measuring the concentration of the replacement gas taken from the small holes for gas intake;
And a process for controlling the supply amount of the replacement gas in accordance with the measured value of the replacement gas concentration. A process of setting a plurality of the above measurement points;
A process of making a separate gas intake small hole corresponding to each measurement point,
A process for measuring the replacement gas concentration at each of the plurality of measurement points;
A process of identifying the lowest measurement point at which the lowest replacement gas concentration is detected or the highest measurement point at which the highest replacement gas concentration is detected among a plurality of measurement points;
2. The surface modification method according to claim 1, wherein a process of controlling a gas supply amount is performed in order to derive the lowest measurement point or the replacement gas concentration at the highest measurement point to a reference value. Comprising a discharge electrode,
The plasma energy generated by the gas replacement discharge between opposing electrodes to the discharge electrode and the counter, in the surface modification apparatus for modifying the surface of processed between the discharge electrode and the counter electrode,
A small hole for gas intake provided in the discharge electrode and opening in the discharge region of the gas displacement discharge to take in the gas in the discharge region;
A surface reformer that is connected to the gas intake small hole and includes a gas measuring means for measuring a replacement gas concentration of the taken-in gas. The discharge electrode is provided with a size corresponding to the processing width of the opposing processed is, together comprising a plurality of small holes for the gas intake to the discharge electrodes, the size of the gas take-in stoma discharge electrode The surface modification device according to claim 3, wherein the surface modification device is formed at a predetermined interval within a range of 5 mm. The surface modification according to claim 3 or 4, further comprising a replacement gas supply amount control means for controlling a supply amount of the replacement gas based on a replacement gas concentration of the gas taken in from the gas intake small hole. Quality equipment.

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