JP2020172063A - Surface modification method and surface modification apparatus - Google Patents

Abstract

To make it possible to accurately identify a replacement gas concentration at a specific point in a discharge region and to surely realize a desired modification effect.SOLUTION: A surface modification apparatus is provided with a discharge electrode 7. The surface modification apparatus modifies a surface of a processing target F between the discharge electrode and a counter electrode 1 by an energy of a plasma generated by a gas substitution discharge generated between the discharge electrode 7 and the counter electrode 1 facing the discharge electrode. The discharge electrode is provided with a gas uptake small hole 9 that opens into a discharge region E2 of the gas substitution discharge to take in gas in the discharge region, and the gas uptake small hole 9 is connected to gas measuring means 11 that measures a replacement gas concentration.SELECTED DRAWING: Figure 1

Description

The present invention relates to a surface modification method and a surface modification apparatus for supplying a replacement gas into a chamber and modifying the surface to be treated with the energy of plasma generated by the gas replacement discharge.

The conventional surface reformer shown in FIG. 7 is provided with a discharge electrode 3 in a chamber 2 to which a replacement gas such as nitrogen gas is supplied. Then, a grounded processing roller 1 facing the discharge electrode 3 is provided, and the processing roller 1 functions as a counter electrode and also has a function of conveying the film F to be processed.

Further, a gas intake port 4 at the tip of a pipe connected to a gas analyzer (not shown) is located substantially in the center of the chamber 2. The gas sucked by the gas intake port 4 is analyzed to measure the concentration of the replacement gas in the chamber 2.
Reference numeral 5 is a replacement gas supply pipe for supplying the replacement gas into the chamber 2.

If a replacement gas is supplied into the chamber 2 as described above and a high voltage is applied to the discharge electrode 3, a gas replacement discharge occurs between the discharge electrode 3 and the processing roller 1, and the energy of the generated plasma causes the gas replacement discharge. The surface of the film F is modified.
In such a surface reforming apparatus, the concentration of the replacement gas in the discharge region E1 affects the effect of the reforming treatment on the film F. If the replacement gas concentration does not reach a predetermined concentration, the discharge may become unstable and the plasma energy may be insufficient. In addition, if the oxygen concentration is high due to the low replacement gas concentration, the generation of ozone and nitrogen oxides in the discharge region will increase, which may adversely affect the film surface.

Further, when it is desired to supply nitrogen gas as a substitution gas to attach a nitrogen-derived functional group to the film surface, if the nitrogen is insufficient, the desired functional group cannot be attached.
Further, there are some treatments in which inconvenience occurs when the replacement gas concentration is too high.
As described above, when the purpose is strict reforming treatment, the replacement gas concentration in the discharge region E1 must be strictly controlled.

Therefore, in the conventional apparatus of FIG. 7, the replacement gas concentration in the discharge region E1 is estimated based on the analysis result of the gas taken in from the gas intake port 4 in the chamber 2. Then, the supply amount of the replacement gas was controlled according to the analogized replacement gas concentration.

Japanese Unexamined Patent Publication No. 2001-246242 Japanese Unexamined Patent Publication No. 2005-076063 Jitsukaisho 59-440

In the conventional surface reforming apparatus as described above, the replacement gas concentration in the discharge region E1 is inferred from the analysis result of the gas taken in from the gas intake port 4 located at a position away from the discharge region E1. The analogy did not always match the replacement gas concentration in the local discharge region E1.
For example, since the outside air flows into the chamber 2 as an accompanying flow a on the surface of the moving film F, the concentration of the replacement gas in the discharge region E1 tends to be lower than that of the other parts of the chamber 2. is there.
If the concentration of the replacement gas in the discharge region E1 becomes low, there is a problem that the desired processing effect cannot be obtained.

In addition, Patent Document 3 describes a device that sucks gas from a long slit continuous in the length direction of the rod-shaped electrode in order to peel off the accompanying flow flowing into the discharge region from the surface to be processed. It is also conceivable to apply such a slit of the discharge electrode to the intake port of the replacement gas. However, the substitution gas concentration measured by sucking gas from the slit over the entire length of the rod-shaped electrode is the average gas concentration of the entire length of the slit, and the gas concentration at a specific point is accurately detected. It is not possible.
Depending on the supply structure of the replacement gas, even if the average value of the gas concentration is the required concentration, there may be places where the required replacement gas concentration is not reached or where the replacement gas concentration becomes abnormally high. Sometimes. However, if only the average value can be measured, even if there is a difference in the replacement gas concentration depending on the location in the discharge region E1, it cannot be grasped, and there is a possibility that processing will be partially defective. ..

An object of the present invention is to provide a surface modification method and a surface modification apparatus capable of accurately specifying the replacement gas concentration at a specific point in the discharge region and surely realizing the desired modification effect.

In the first invention, the substitution gas supplied between the electrode structure and the counter electrode is turned into plasma in the discharge region between the electrode structure and the counter electrode, and the surface to be treated is modified by the energy of this plasma. In the surface modification method, a process of specifying a measurement point of the replacement gas concentration in the discharge region, a process of setting the position of a small hole for gas intake corresponding to the specified measurement point, and a process of setting the gas intake A process of measuring the concentration of the replacement gas taken in from the small holes and a process of controlling the supply amount of the replacement gas according to the measured value of the replacement gas concentration are executed.

The second invention includes a process of setting a plurality of the measurement points, a process of associating each measurement point with a separate small hole for gas intake, and a process of measuring the replacement gas concentration of each of the plurality of measurement points. , The process of identifying the lowest or highest replacement gas concentration that detected the lowest or highest substitution gas concentration among multiple measurement points, and the replacement gas concentration of the lowest or highest replacement gas concentration. , Perform the process of controlling the gas supply to reach the reference value.

The third invention includes an electrode structure provided with a discharge electrode, and the energy of plasma generated by gas substitution discharge generated between the counter electrode facing the electrode structure causes the electrode structure and the facing electrode to face each other. In a surface reforming device that modifies the surface to be treated with the electrode, the electrode structure is opened in the discharge region of the gas replacement discharge to take in the gas in the discharge region and to take in the gas taken in. It is provided with a small hole for gas intake connected to a gas measuring means for measuring the replacement gas concentration.
In the present invention, the fact that the small hole for gas intake is open in the discharge region means that not only is there an opening in the discharge region, but also the gas in the discharge region can be taken in by facing the discharge region in the vicinity of the discharge region. It also includes the case where it is open at the position.

In the fourth aspect of the present invention, the electrode structure has a size corresponding to the object to be processed, and the electrode structure is provided with a plurality of small holes for gas intake, and these small holes for gas intake are provided. It is formed at a predetermined interval within the size range of the electrode structure.
The size of the electrode structure is the length and area of the portion of the electrode structure that faces the discharge region.
Further, the predetermined interval is an interval that can be distinguished without interfering with the gas taken in from the specific gas uptake small hole and the gas taken in from the adjacent gas uptake small hole.

A fifth invention is provided with a replacement gas supply amount control means for controlling the supply amount of the replacement gas based on the replacement gas concentration of the gas taken in from the gas intake small hole.

According to the first invention, the replacement gas concentration at a specific point in the discharge region can be measured, and the supply amount of the replacement gas can be controlled according to the measured value at the measurement point.
In particular, the measurement point is set to the lowest measurement point at which the replacement gas concentration is the lowest value or the highest measurement point at which the replacement gas concentration is the highest, and the replacement gas is based on the gas concentration at this lowest measurement point or the highest measurement point. By controlling the supply amount, it is possible to control the minimum value or the maximum value of the replacement gas concentration in the discharge region to maintain the replacement gas concentration suitable for the treatment.

Further, if the minimum required replacement gas is supplied according to the concentration of the replacement gas at the measured minimum measurement point, the replacement gas is not supplied more than necessary and is not wasted.
On the other hand, if the highest measurement point is set as the measurement point and the maximum measurement point is controlled to be the reference value, the replacement gas concentration in the entire discharge region does not become too high, and if the replacement gas concentration is too high, a problem occurs. Such processing can be stably realized.

According to the second invention, the replacement gas concentration at a plurality of points in the discharge region can be measured pinpointly, and the position of the lowest measurement point or the highest measurement point can be accurately specified.
Further, the gas supply amount can be controlled according to the measured value of the specified minimum measurement point or the maximum measurement point, and a stable reforming process can be realized.

According to the third surface reformer, the replacement gas concentration at a specific point in the discharge region corresponding to the gas intake small hole can be measured pinpointly. Therefore, if the supply amount of the replacement gas is controlled according to the measured replacement gas concentration, the replacement gas concentration in the discharge region can be maintained appropriately. As a result, the desired reforming process can be realized.

According to the fourth invention, the replacement gas concentration distribution in the discharge region can be detected by measuring the replacement gas concentration corresponding to the positions of the plurality of gas intake small holes.
Further, the target reforming process can be realized by controlling the supply amount of the replacement gas according to the detected replacement gas concentration distribution. Further, the position of the electrode structure, the means for supplying the replacement gas, and the like can be adjusted to improve the replacement gas concentration distribution. If the distribution of the replacement gas concentration becomes smaller, the entire surface to be treated can be more uniformly reformed while suppressing the consumption of the replacement gas.

According to the fifth invention, the supply amount of the replacement gas can be controlled according to the measured value of the replacement gas concentration, and the reforming failure can be prevented.

It is the schematic of the 1st Embodiment of this invention. It is a perspective view of the discharge electrode of 1st Embodiment. It is the schematic of the 2nd Embodiment. It is a perspective view of the discharge electrode of 3rd Embodiment. It is the schematic of the 4th Embodiment. It is the schematic of the 5th Embodiment. It is the schematic of the conventional surface modification apparatus.

The first embodiment shown in FIGS. 1 and 2 is a surface reforming apparatus for reforming the film F conveyed by the processing roller 1 which is grounded and rotated by the energy of plasma generated by the gas replacement discharge. .. In this first embodiment, the same reference numerals as those in FIG. 7 are used for the same components as those in the conventional example.
As shown in FIG. 1, in the chamber 2, a rod-shaped discharge electrode 7 having a length in the width direction of the film F is held by the holding member 6.

Then, the replacement gas is supplied to the chamber 2 from a gas supply source (not shown) via the replacement gas supply pipe 5. A replacement gas supply amount control means (not shown) for controlling the supply amount is provided in the gas supply path between the gas supply source and the chamber 2.
In the first embodiment, the holding member 6 and the discharge electrode 7 constitute the electrode structure of the present invention. This electrode structure is attached to the ceiling surface of the chamber 2 via the holding member 6, but a connecting member or the like may or may not be interposed between the holding member 6 and the ceiling surface. ..

Further, a high voltage source (not shown) is connected to the discharge electrode 7 so that discharge is generated in the discharge region E2 between the tip of the discharge electrode 7 and the grounded processing roller 1 serving as the counter electrode.
At the tip of the discharge electrode 7, as shown in FIGS. 1 and 2, a pair of convex portions 7a, 7a protruding toward the film F are continuous in the length direction of the discharge electrode 7, and the convex portions 7a, 7a are continuous. Of these, the points where the distance from the processing roller 1 is the shortest are the discharge units 7b and 7b, and these discharge units 7b and 7b are continuous in the above-mentioned length direction.

Since the distance between the discharge units 7b and 7b and the processing roller 1 is minimized, the electric field strength between the discharge units 7b and 7b and the processing roller 1 becomes the highest when a high voltage is applied. The discharge region E2 is formed by this strong electric field. Both the discharge units 7b and 7b have the same facing distance from the processing roller 1. By making the opposing distances equal in this way, the discharge region E2 can be widened.

Further, a concave portion 7c continuous in the length direction is formed between the convex portions 7a and 7a, and the inside of the concave portion 7c is a non-discharging portion.
In the first embodiment, a gas intake small hole 9 is opened in the bottom surface of the recess 7c, and a gas passage 8 is formed in the discharge electrode 7 with one end side opening as the gas intake small hole 9. Has been done. An opening 10 on the other end side of the gas passage 8 is provided on the side surface 7d of the discharge electrode 7. Since the gas intake small hole 9 is opened in the non-discharged portion in this way, this opening does not affect the discharge of the discharged portion 7b.

The recess 7c formed between the discharge portions 7b and 7b faces the discharge region E2 in the vicinity of the discharge region E2 generated between the discharge portions 7b and 7b and the processing roller 1. Therefore, the gas intake small hole 9 opened in the recess 7c also faces the discharge region E2.
Further, a pipe 12 communicating with the gas measuring means 11 installed outside the chamber 2 is connected to the opening 10 of the discharge electrode 7. The gas measuring means 11 has a suction function for taking in gas from the small hole 9 for taking in gas and a gas analysis function for specifying the component and concentration of the taken in gas, and detects the concentration of the replacement gas in the taken in gas. It has a function to do.

Therefore, in this first embodiment, the gas in the discharge region E2 can be directly taken in from the gas taking-in small hole 9 opened in the recess 7c and analyzed by the gas measuring means 11.
The opening position of the gas intake small hole 9 corresponds to the measurement point of the present invention.
Also in the apparatus of the first embodiment, the accompanying flow a flows in from the outside of the chamber 2 as in the conventional case, and the accompanying flow a and the replacement gas are mixed and between the discharge units 7b and 7b and the processing roller 1. It flows into the discharge region E2. Therefore, in the discharge region E2, the replacement gas concentration may be lower than other parts in the chamber 2.

However, in this first embodiment, since the gas in the discharge region E2 is taken in from the gas intake small hole 9 which is the measurement point, the pinpoint replacement gas concentration in the discharge region E2 can be accurately measured.
In particular, in this first embodiment, since the gas intake small hole 9 is formed in the recess 7c formed between the discharge portions 7b and 7b, the opening of the gas intake small hole 9 is discharged. Since it is surrounded by the parts 7b and 7b, the gas in the discharge region E2 can be reliably taken in and the replacement gas concentration can be measured more accurately.

Further, based on the measured replacement gas concentration, the replacement gas supply amount control means can control the supply amount of the replacement gas to realize the desired treatment.
Since the discharge portions 7b and 7b are continuous in the length direction of the discharge electrode 7, the discharge region E2 is formed longer in the length direction of the discharge electrode 7, but the flow amount of the accompanying flow a is different. The flow of the replacement gas may be different, and the replacement gas concentration may be distributed depending on the position of the discharge region E2 in the length direction. Therefore, when controlling the supply amount of the replacement gas based on the measured value of the replacement gas concentration, it is important at which position the replacement gas concentration is measured.

Since the opening position of the gas intake small hole 9 corresponds to the measurement point as described above, the measurement point changes depending on the position of the opening. If the most suitable position for measuring the gas concentration is specified in advance and a small hole 9 for gas intake is opened there, the replacement gas concentration suitable for the processing purpose can be measured and the replacement gas supply amount can be controlled. it can.
The position of the optimum measurement point can be specified according to the measured distribution of the replacement gas concentration.
The distribution of the replacement gas concentration can also be estimated from the structure of the chamber, the position of the replacement gas supply port, and the like. If it can be estimated in this way, it is not necessary to actually measure it.

For example, if the gas intake small hole 9 is opened at the lowest measurement point at the position where the replacement gas concentration is the lowest, the measurement reference becomes the lowest gas concentration. On the contrary, if the gas intake small hole 9 is opened at the highest measurement point at the position where the replacement gas concentration is the highest, the measurement reference becomes the highest gas concentration. In addition, a measurement point for opening a small hole for gas intake can be set between the minimum measurement point and the maximum measurement point.
In any case, the position of the measurement point can be freely selected according to the processing purpose.

For example, when it is desired to keep the replacement gas concentration in the entire discharge region at or above the reference value, the gas intake small hole 9 is opened at the lowest measurement point where the gas concentration is the lowest. In this way, if the replacement gas supply amount is controlled according to the measured value at the lowest measurement point, the target processing can always be realized with the minimum necessary replacement gas, so that the replacement gas is not wasted.
On the other hand, there is a type of treatment in which the desired treatment cannot be performed when the replacement gas concentration exceeds the reference value. When performing such a process, in order to set the upper limit of the replacement gas concentration, the highest measurement point at which the replacement gas concentration becomes the highest is specified, and the gas intake small hole 9 is opened there. ..

In the first embodiment as described above, since the replacement gas concentration in the discharge region E2 can be directly taken in from the gas intake small hole 9 opened in the discharge region, the accurate replacement gas concentration in the discharge region E2 can be measured.
Further, since the gas uptake small hole 9 is opened in the non-discharged portion, this opening does not affect the discharge formation, and a uniform discharge state can be maintained.
Further, the opening of the gas intake small hole 9 is surrounded by the discharge portions 7b and 7b, so that the gas in the discharge region E2 can be reliably taken in and the replacement gas concentration can be measured more accurately.

In the first embodiment, the opening 10 of the gas passage 8 on the opposite side of the small gas intake hole 9 may be provided anywhere in the electrode structure. For example, the opening 10 may be provided on the end face of the discharge electrode 7 in the length direction, or the opening 10 may be provided between the discharge electrode 7 and the holding member 6 or in the holding member 6.

Further, a plurality of discharge electrodes similar to the discharge electrode 7 may be arranged along the transport direction of the film F. The gas passage 8 and the gas intake small hole 9 may be provided in any of them, or the gas passage 8 and the gas intake small hole 9 may be provided in all the discharge electrodes 7. When a plurality of gas intake small holes 9 are provided, individual gas measuring means 11 are connected to each, and the replacement gas concentration is pinpointly measured at each opening position of each gas intake small hole 9. be able to.

The second embodiment shown in FIG. 3 is a surface modification device in which a pair of rod-shaped discharge electrodes 15 and 16 supported by a rod-shaped support member 13 are provided in the chamber 2 at intervals. In the second embodiment, the discharge electrodes 15 and 16, the support member 13 sandwiched between them, and the holding member 6 constitute the electrode structure of the present invention.
A gas supply source (not shown) and a replacement gas passage 14 connected to the replacement gas supply amount control means are formed in the support member 13, and the discharge electrode 15 passes through the facing gaps of the discharge electrodes 15 and 16 from the gas passage 14. , 16 and the processing roller 1 are supplied with a replacement gas. Therefore, the replacement gas is directly supplied to the discharge regions E3 and E4 described later, and waste can be reduced.
In the second embodiment, the same reference numerals as those in FIG. 1 are used for the same components as those in the first embodiment.

Further, the tips of the discharge electrodes 15 and 16 have a pair of convex portions 15a, 15a, 16a and 16a having an arcuate cross section protruding toward the processing roller 1 which is a counter electrode and having a length in the width direction of the film F. It is formed. The discharge portions 15b, 15b, 16b, 16b are the points where the distance between the convex portions 15a, 15a, 16a, 16a and the processing roller 1 is the shortest at the tips thereof. The electric field strength increases between the discharge unit 15b and the processing roller 1 and between the discharge unit 16b and the processing roller 1, and discharge regions E3 and E4 are formed, respectively.

Further, the concave portion formed at the boundary between the pair of convex portions 15a and 15a and the inside of the concave portion formed at the boundary between the convex portions 16a and 16a are non-discharging portions. Small holes 9 for gas intake are opened in the recesses that are non-discharged portions.
Further, gas passages 8 and 8 having the gas intake small hole 9 as one end are formed in each of the discharge electrodes 15 and 16. The gas passages 8 and 8 are provided with openings 10 and 10 on the opposite sides of the gas intake small holes 9 and 9 on the side surfaces 15c and 16c of the discharge electrodes 15 and 16. Then, the gas measuring devices 11 and 11 are connected to the openings 10 and 10 via the pipes 12 and 12.
The discharged parts 15b and 16b and the non-discharged parts in the second embodiment are also continuous in the length direction of the discharge electrodes 15 and 16.

In the surface reforming apparatus of the second embodiment as well, the accompanying flow a of the film F conveyed by the processing roller 1 flows into the discharge regions E3 and E4 together with the replacement gas, but the gas mixed with the accompanying flow. Can be taken in from the gas uptake small hole 9 and the replacement gas concentration can be measured.
Since the gas intake small hole 9 is opened between the pair of discharge portions 15b, 15b, 16b, 16b at the tips of the discharge electrodes 15 and 16, the gas in the discharge regions E3 and E4 can be directly taken in. The pinpoint replacement gas concentration in the discharge regions E3 and E4 can be accurately measured.

Further, since the discharge electrodes 15 and 16 are located on the upstream side and the downstream side of the replacement gas passage 14 along the transport direction of the film F, the replacement gas at the positions of the pair of gas intake small holes 9 and 9. It is also possible to grasp the influence of the movement of the film F on the replacement gas concentration from the concentration.
Further, also in this second embodiment, if the supply amount of the replacement gas is controlled based on the measurement results of the small holes 9 and 9 for gas intake, the desired reforming process can be stably realized. it can.
In the second embodiment, since the replacement gas is directly supplied to the discharge regions E3 and E4 from the replacement gas passage 14 formed in the support member 13, the replacement gas flows out of the discharge regions E3 and E4 and is wasted. Can be prevented.

The opening 10 of the gas passage 8 opposite to the gas intake small hole 9 may be provided anywhere as long as the gas intake small hole 9 can be connected to the measuring device 11.
Further, the gas intake small hole 9 may be formed in only one of the discharge electrodes 15 and 16.
Further, the number of discharge electrodes is not limited to one, and the number of discharge electrodes on which the gas intake small holes 9 are formed is not particularly limited among the plurality of discharge electrodes.

In the third embodiment shown in FIG. 4, a plurality of gas intake small holes 9 are provided in the non-discharge portion 7c of the discharge electrode 7 at predetermined intervals in the length direction thereof, and each of them is provided with a gas passage 8 and an opening. The device is connected to the gas measuring means 11 via 10, and other configurations are the same as those of the first embodiment shown in FIG.
It should be noted that between the gas intake small holes 9 and 9, the gas taken in from the specific gas intake small hole 9 and the gas taken in from the adjacent gas intake small hole 9 do not interfere with each other. , Arranged at distinguishable intervals. Therefore, only the gas in the region facing the gas intake small hole 9 is taken in from each gas intake small hole 9, and the pinpoint replacement gas concentration can be accurately measured.

As described above, in the third embodiment, since the pinpoint replacement gas concentration corresponding to the plurality of gas intake small holes 9 along the length of the rod-shaped discharge electrode 7 can be measured, the discharge can be performed from these measured values. It is possible to grasp the replacement gas concentration distribution in the discharge region extending in the length direction of the electrode 7.
Therefore, the target reforming process can be realized by controlling the supply amount of the replacement gas while monitoring the replacement gas concentration at all the measurement points.

Also, from multiple measurement points, the lowest measurement point where the replacement gas concentration is the lowest and the highest measurement point where the replacement gas concentration is the highest are specified, and the replacement gas supply amount so that the replacement gas concentration there becomes the reference value. Can also be controlled.
The gas concentration distribution may change during operation of the device, and the minimum measurement point and the maximum measurement point may also move. In particular, the larger the processing width such as the width of the film F, the more easily the replacement gas concentration distribution fluctuates. However, if a plurality of small holes 9 for gas intake are provided as in the third embodiment, the gas concentration distribution can be monitored, and if the replacement gas supply amount is controlled based on the gas concentration distribution, a more strict replacement gas concentration can be obtained. Can be controlled.

Further, in FIG. 4, a plurality of gas intake small holes 9 are arranged in a row along the length direction of the discharge electrode 7, but the arrangement of the gas intake small holes 9 can be changed depending on the shape of the discharge electrode. You can also. For example, when the portion of the discharge electrode facing the discharge region is planar, a plurality of small holes 9 for gas intake may be arranged on the surface. By arranging the gas uptake small holes 9 in the plane, it is possible to measure the replacement gas concentration distribution within a predetermined area of the discharge region.

In the first to third embodiments, the small holes 9 for taking in gas are opened in the non-discharging portion so that the openings do not interfere with the formation of a uniform discharge. However, if the turbulence of the discharge can be tolerated, the gas intake small hole 9 may be formed in the discharge portion. In short, the gas intake small hole 9 may be provided anywhere on the discharge electrode as long as it faces the discharge area and can take in gas in the discharge area.
Further, the non-discharging portion through which the gas intake small hole 9 opens may be a position other than the discharge portion and is located at a position facing the discharge region and capable of taking in gas in the discharge region, and as described above, between the discharge portions. It is not limited to the recess formed.

In the fourth embodiment shown in FIG. 5, the holding member 6 attached to the ceiling surface of the chamber 2 holds the discharge electrode 17 and the cover members 18 and 19 on both sides thereof. A support member 20 is interposed between the discharge electrode 17 and the cover members 18 and 19, and a constant gap is maintained between the cover members 18 and 19 and the discharge electrode 17.
The discharge electrode 17 is a rod-shaped electrode having a length in the width direction of the film F as in the other embodiment. The discharge electrode 17 also has a pair of convex portions formed at the tip thereof, and the tip thereof includes a pair of discharge portions having the shortest distance from the processing roller 1. Therefore, when a high voltage is applied, a discharge region E5 extending in the width direction of the film F is formed within the facing distance between these discharge portions and the processing roller 1.

Further, the cover members 18 and 19 are members formed of an insulating material such as resin or ceramic and having a length and a width for covering the discharge electrode 17.
In the fourth embodiment, the support member 20, the discharge electrode 17, the cover members 18, 19 and the holding member 6 constitute the electrode structure of the present invention.
In the fourth embodiment, the components having the same reference numerals as those of the first embodiment shown in FIG. 1 are the same as those of the first embodiment.

Further, a gas passage 8 is formed in the cover member 18 located on the upstream side of the film F in the moving direction with respect to the discharge electrode 17. Similar to the first embodiment shown in FIG. 2, the gas passage 8 has a gas intake small hole 9 having one end open toward the film F and an opening 10 at the other end, and is a gas measuring means via a pipe 12. It is connected to 11. Then, the gas uptake small hole 9 opens at a position facing the discharge region E5 formed between the tip of the discharge electrode 17 and the processing roller 1.
As a result, the gas in the discharge region E5 in which the accompanying flow a along the surface of the film F and the replacement gas are mixed is taken in from the gas intake small hole 9 and can be guided to the gas measuring means 11. .. By analyzing the taken-in gas with the gas measuring means 11, the pinpoint replacement gas concentration in the discharge region E5 can be measured.

Therefore, if the replacement gas supply amount is controlled by a replacement gas supply means (not shown) based on the measured replacement gas concentration, the replacement gas concentration in the discharge region E5 can be maintained appropriately and the desired reforming process can be realized. can do.
In the fourth embodiment, the cover member 18 provided on the upstream side of the discharge electrode 17 is provided with the gas intake small hole 9, but the gas intake small hole 9 is provided on the downstream side cover member 19. Alternatively, both cover members 18 and 19 may be provided to measure the replacement gas concentrations on the upstream side and the downstream side of the discharge electrode 17.

Further, any one of the cover members 18 and 19 may be omitted.
However, the cover member 18 provided on the upstream side of the discharge electrode 17 regulates the gas flow in which the accompanying flow a flowing from the outside of the chamber 2 entrains the replacement gas and flows into the discharge region E5, and the state of the gas in the discharge region E5. Demonstrate the function of stabilizing.
Further, the cover member 19 on the downstream side exerts a function of stabilizing the state of the gas in the discharge region E5 by adjusting the gas flow flowing out from the discharge region E5.

Therefore, by providing either or both of the cover members 18 and 19, there is an advantage that the state of the gas in the discharge region E5 is stabilized.
Therefore, in the apparatus provided with the cover members 18 and 19 as in the fourth embodiment, the replacement gas concentration measured by taking in from the gas intake small holes 9 is stable, and based on this, the replacement gas in the discharge region E5 is replaced. Control to maintain proper concentration becomes easy. Therefore, the desired reforming process can be realized more reliably.

The positions and shapes of the gas passages 8 formed in the cover members 18 and 19 are not limited to this embodiment. For example, the opening 10 connected to the pipe 12 may be provided between the cover members 18 and 19 and the holding member 6 or in the holding member 6.
Further, in the fourth embodiment, one rod-shaped discharge electrode 17 is provided between the pair of cover members 18 and 19, but a plurality of discharge electrodes may be provided along the moving direction of the film F.
Furthermore, the cover members 18 and 19 of the fourth embodiment may be provided on the upstream side, the downstream side, or both sides of the discharge electrodes of the first to third embodiments.
Further, the cover members 18 and 19 may be provided with a plurality of small holes 9 for taking in gas along the length direction thereof, and the replacement gas distribution in the length direction may be measured.

In the fifth embodiment shown in FIG. 6, the electrode structure thereof is configured as follows.
That is, the electrode structure 22 includes an electrode holder 21, a dielectric 24 made of a ceramic pipe held in the electrode holder 21, and a rod-shaped electrode member 23 made of metal provided in the dielectric 24. Consists of.
The electrode holder 21 is directly or indirectly fixed to the ceiling surface of the chamber (not shown) via a connecting member (not shown). Then, as in the first embodiment, a gas supply source and a replacement gas supply amount control means (not shown) are connected to this chamber, and the replacement gas is supplied.
The components having the same reference numerals as those in the first embodiment in FIG. 6 have the same configurations as those in the first embodiment.

Further, a gas passage 8 is formed in the electrode holder 21, and one end thereof is opened as a gas intake small hole 9 toward the discharge region E6. Further, the other end of the gas passage 8 is used as an opening 10 and is connected to the gas measuring means 11 via a pipe 12.
Also in this fifth embodiment, the pinpoint replacement gas concentration in the discharge region E6 can be measured by taking in the gas from the gas intake small hole 9.
Then, the supply amount of the replacement gas can be controlled according to the measured value of the replacement gas concentration, and the desired reforming treatment can be stably realized, which is the same as the other embodiments.

In the first to fifth embodiments, the grounded processing roller 1 constitutes the counter electrode of the present invention. However, if the counter electrode can generate plasma by gas replacement discharge with the discharge electrode, the roller It does not have to be.
Further, the counter electrode is not limited to the ground potential. The counter electrode may be capable of realizing a potential difference that allows discharge from the discharge electrode. For example, a voltage having a polarity opposite to that applied to the discharge electrode may be applied to the counter electrode.

Further, the shape of the portion of the discharge electrode facing the counter electrode may be any shape as long as the discharge portion is formed. As in the first to fourth embodiments, the discharge range can be expanded by providing a plurality of discharge units.
Further, the processing target in the surface modification apparatus of the present invention is not limited to the continuous film F as described above. The surface modifier of the present invention can be applied to various processing objects moving in the discharge region, such as a single-wafer sheet or a plate member.

In particular, it is suitable for surface modification in which the treatment effect is easily affected by the concentration of the replacement gas.

1 (Counter electrode) Processing roller 2 Chamber 6 (Electrode structure) Holding member 7, 15, 16, 17, 22 (Electrode structure) Discharge electrode 9 Small hole for gas intake 11 Gas measuring means 18, 19 (Electrode structure) Body) Cover member 20 (Electrode structure) Support member 21 (Electrode structure) Electrode holder 23 (Electrode structure) Electrode member 24 (Electrode structure) Dielectric F (Processing target) Films E2 to E6 Discharge area

A first aspect of the present invention is surface modification of the discharge electrode and the counter electrode supplied replacement gas between plasma at a discharge zone between the discharge electrode and the counter electrode, to modify the surface to be processed with an energy of the plasma In the quality method, the process of specifying the measurement point of the replacement gas concentration in the discharge region, the process of setting the position of the gas intake small hole corresponding to the specified measurement point, and the gas intake small hole. The process of measuring the replacement gas concentration taken in from the above and the process of controlling the supply amount of the replacement gas according to the measured value of the replacement gas concentration are executed.

The third invention example Bei discharge electrodes, by the energy of plasma generated by gas replacement discharge which is generated between the counter electrode facing the discharge electrode, the treatment target between the discharge electrode and the counter electrode In the surface reformer for modifying the surface of the above, the discharge electrode is opened in the discharge region of the gas replacement discharge to take in the gas in the discharge region, and the gas measurement is performed to measure the replacement gas concentration of the taken in gas. It is provided with a small hole for gas intake connected to the means.
In the present invention, the fact that the small hole for gas intake is open in the discharge region means that not only is there an opening in the discharge region, but also the gas in the discharge region can be taken in by facing the discharge region in the vicinity of the discharge region. It also includes the case where it is open at the position.

A fourth invention, the discharge electrode has a size corresponding to the processing target opposite of, with provided with a plurality of small holes for the gas intake to the discharge electrodes, these gases take-stoma discharge electrode It is formed at a predetermined interval within the range of the size of.
Note that the size of the discharge electrodes is the length and area of a portion facing the discharge area a discharge electrode.
Further, the predetermined interval is an interval that can be distinguished without interfering with the gas taken in from the specific gas uptake small hole and the gas taken in from the adjacent gas uptake small hole.

According to the fourth invention, the replacement gas concentration distribution in the discharge region can be detected by measuring the replacement gas concentration corresponding to the positions of the plurality of gas intake small holes.
Further, the target reforming process can be realized by controlling the supply amount of the replacement gas according to the detected replacement gas concentration distribution. Further, the position of the discharge electrode and the means for supplying the replacement gas can be adjusted to improve the replacement gas concentration distribution. If the distribution of the replacement gas concentration becomes smaller, the entire surface to be treated can be more uniformly reformed while suppressing the consumption of the replacement gas.

The first to fifth embodiments will be described below. The fourth and fifth embodiments are reference examples of the present invention.
The first embodiment shown in FIGS. 1 and 2 is a surface reforming apparatus for reforming the film F conveyed by the processing roller 1 which is grounded and rotated by the energy of plasma generated by the gas replacement discharge. .. In this first embodiment, the same reference numerals as those in FIG. 7 are used for the same components as those in the conventional example.
As shown in FIG. 1, in the chamber 2, a rod-shaped discharge electrode 7 having a length in the width direction of the film F is held by the holding member 6.

Then, the replacement gas is supplied to the chamber 2 from a gas supply source (not shown) via the replacement gas supply pipe 5. A replacement gas supply amount control means (not shown) for controlling the supply amount is provided in the gas supply path between the gas supply source and the chamber 2.
In the first embodiment, the holding member 6 and the discharge electrode 7 constitute the electrodes structure. This electrode structure is attached to the ceiling surface of the chamber 2 via the holding member 6, but a connecting member or the like may or may not be interposed between the holding member 6 and the ceiling surface. ..

The second embodiment shown in FIG. 3 is a surface modification device in which a pair of rod-shaped discharge electrodes 15 and 16 supported by a rod-shaped support member 13 are provided in the chamber 2 at intervals. In this second embodiment, the discharge electrodes 15 and 16, and the support member 13 interposed therebetween, and the holding member 6 constitutes the collector electrode structure.
A gas supply source (not shown) and a replacement gas passage 14 connected to the replacement gas supply amount control means are formed in the support member 13, and the discharge electrode 15 passes through the facing gaps of the discharge electrodes 15 and 16 from the gas passage 14. , 16 and the processing roller 1 are supplied with a replacement gas. Therefore, the replacement gas is directly supplied to the discharge regions E3 and E4 described later, and waste can be reduced.
In the second embodiment, the same reference numerals as those in FIG. 1 are used for the same components as those in the first embodiment.

Further, the cover members 18 and 19 are members formed of an insulating material such as resin or ceramic and having a length and a width for covering the discharge electrode 17.
In the fourth embodiment, and the support member 20, discharge electrodes 17, the cover members 18 and 19 and the holding member 6 constitutes the collector electrode structure.
In the fourth embodiment, the components having the same reference numerals as those of the first embodiment shown in FIG. 1 are the same as those of the first embodiment.

1 (counter electrode) processing roller 2 Chang Bas
7, 15 and 16 discharge DENDEN electrode 9 gas take-small hole 11 gas measurement hand stage
F (Processing target) Film E2 to E4 Discharge area

Claims (5)

In a surface modification method in which the substitution gas supplied between the electrode structure and the counter electrode is turned into plasma in the discharge region between the electrode structure and the counter electrode, and the surface to be treated is modified by the energy of this plasma. ,
The process of identifying the measurement point of the replacement gas concentration in the discharge region and
The process of setting the position of the gas intake small hole corresponding to the above-specified measurement point,
The process of measuring the concentration of the replacement gas taken in from the above small hole for gas uptake, and
A surface modification method for carrying out a process of controlling the supply amount of the replacement gas according to the measured value of the replacement gas concentration. The process of setting multiple measurement points and
The process of associating each measurement point with a separate small hole for gas intake,
The process of measuring the replacement gas concentration at each of the above multiple measurement points, and
The process of identifying the lowest measurement point that detected the lowest replacement gas concentration or the highest measurement point that detected the highest replacement gas concentration among multiple measurement points.
The surface modification method according to claim 1, wherein the process of controlling the gas supply amount in order to bring the replacement gas concentration of the minimum measurement point or the maximum measurement point to a reference value is executed. With an electrode structure with discharge electrodes,
In a surface modification device that modifies the surface to be treated between the electrode structure and the counter electrode by the energy of plasma generated by the gas replacement discharge between the electrode structure and the counter electrode facing the electrode structure.
The electrode structure has a small hole for gas intake that opens in the discharge region of the gas replacement discharge and takes in the gas in the discharge region.
A surface reforming device connected to the small hole for gas uptake and provided with a gas measuring means for measuring the concentration of the replaced gas of the taken in gas. The electrode structure has a size corresponding to the processing width of the facing object to be processed, and the electrode structure is provided with a plurality of small holes for gas intake, and these small holes for gas intake are electrode structures. The surface modification apparatus according to claim 3, which is formed at a predetermined interval within the range of the size of the above. The surface modification according to claim 3 or 4, wherein a replacement gas supply amount control means for controlling the supply amount of the replacement gas is provided based on the replacement gas concentration of the gas taken in from the small hole for gas intake. Quality equipment.

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