JP6574628B2 - Insulating heat dissipation sheet manufacturing method, semiconductor module manufacturing method, and raw material sheet - Google Patents

Description

  The present invention relates to a method for manufacturing an insulating heat dissipation sheet, a method for manufacturing a semiconductor module, and a raw material sheet.

  Conventionally, an insulating heat dissipation sheet is used for a semiconductor module or the like in the electronics field. This insulating heat dissipation sheet has an insulating layer containing an inorganic filler and a thermosetting resin, and a support layer laminated on the insulating layer (for example, Patent Document 1).

JP 2006-191150 A

  By the way, with respect to the manufacture of the insulating heat-dissipating sheet, usually, one large raw material sheet is produced, and the raw material sheet is cut with a punching press or the like to produce a plurality of insulating heat-dissipating sheets having a desired shape and size. Things have been done.

However, there is a problem that an insulating heat radiating sheet having a crack or a chip in the insulating layer is produced during the cutting. In addition, the insulating sheet is also cracked or chipped in the raw material sheet remaining after the cutting, and when the insulating heat dissipation sheet is further produced from the raw material sheet, the raw material sheet is cut to avoid the cracked or chipped portion. There is also a problem that the insulating heat radiation sheet produced from one raw material sheet is reduced.
In addition, there is a problem in that the insulating layer swarf is generated during the cutting, and an insulating heat-dissipating sheet to which the swarf is attached is generated.

  In view of the above problems, the present invention makes it difficult for cracks and chips to occur in the insulating heat-radiating sheet and the insulating layer of the raw material sheet when the raw material sheet is cut. It is a first problem to provide a manufacturing method. Moreover, it is set as the 2nd subject to provide the manufacturing method of a semiconductor module using the insulating heat dissipation sheet obtained by the manufacturing method of this insulation heat dissipation sheet. Moreover, it is a 3rd subject to provide the raw material sheet | seat used with the manufacturing method of this insulation heat radiating sheet.

The present invention comprises a cutting step of producing an insulating heat-dissipating sheet by cutting a raw material sheet having an insulating layer containing an inorganic filler and a thermosetting resin and a support layer laminated on the insulating layer. A method of manufacturing a heat dissipation sheet,
In the cutting step, the insulating layer is a method for manufacturing an insulating heat radiation sheet, in which the insulating layer is heated to perform the cutting.

  According to such a method of manufacturing an insulating heat dissipation sheet, the cutting is performed by heating the insulating layer. Therefore, the cutting is performed in a state where the thermosetting resin of the insulating layer is softened. When cut, the insulating heat radiation sheet and the insulating layer of the raw material sheet are less likely to be cracked or chipped, and further, the insulating layer is less likely to be cut.

Further, the present invention is a method for manufacturing a semiconductor module, which manufactures a semiconductor module comprising a semiconductor element and an insulating layer for electrically insulating the semiconductor element from the outside,
It is a manufacturing method of a semiconductor module which forms the insulating layer with an insulating heat dissipation sheet obtained by the manufacturing method of the insulating heat dissipation sheet.

Furthermore, the present invention is a raw material sheet for producing an insulating heat dissipation sheet by cutting,
An insulating layer containing an inorganic filler and a thermosetting resin, and a support layer laminated on the insulating layer;
The cutting is a raw material sheet that is implemented by heating the insulating layer.

  According to the present invention, when the raw material sheet is cut, the insulating heat radiating sheet and the insulating layer of the raw material sheet are less likely to be cracked or chipped, and further, the insulating layer is less likely to be cut. Can be provided. Moreover, the manufacturing method of a semiconductor module using the insulation heat dissipation sheet obtained by this insulation heat dissipation sheet manufacturing method can be provided. Furthermore, the raw material sheet | seat used with the manufacturing method of this insulation heat radiating sheet can be provided.

1 is a schematic cross-sectional view of a semiconductor module according to an embodiment. The schematic sectional drawing of the semiconductor module of other embodiment.

  Hereinafter, an embodiment of the present invention will be described.

First, the manufacturing method of the insulation heat dissipation sheet of this embodiment is demonstrated.
The manufacturing method of the insulation heat dissipation sheet of this embodiment applies an insulating layer containing an inorganic filler and a thermosetting resin by applying a resin composition containing an inorganic filler and a thermosetting resin to a support sheet; A raw material sheet forming step of forming a raw material sheet having the support layer that is the support sheet laminated on the insulating layer; and a cutting step of producing an insulating heat dissipation sheet by cutting the raw material sheet.

  The resin composition used in the raw material sheet forming step contains an inorganic filler, a thermosetting resin, and an organic solvent capable of dissolving the thermosetting resin.

  Although the said thermosetting resin is not specifically limited, For example, an epoxy resin, a phenol resin, etc. are mentioned.

  Examples of the epoxy resin include bisphenol A type epoxy resin, modified bisphenol A type epoxy resin, bisphenol F type epoxy resin, modified bisphenol F type epoxy resin, triphenylmethane type epoxy resin, cresol novolac type epoxy resin, biphenyl type epoxy resin. Various epoxy resins such as dicyclopentadiene type epoxy resin, phenol novolac type epoxy resin, and phenoxy resin can be used alone or in combination of two or more.

As the phenol resin, for example, dicyclopentadiene type phenol resin, novolac type phenol resin, cresol novolac resin, phenol aralkyl resin, triphenylmethane type phenol resin and the like are used.
Among these, triphenylmethane type phenolic resin is advantageous in heat resistance, and phenol aralkyl resin exhibits good adhesion with the adherend when the insulating heat dissipation sheet is adhered to the adherend. It is preferably used in terms of points.

In addition, when employ | adopting an epoxy resin as the said thermosetting resin, you may add the hardening | curing agent and hardening accelerator of the said epoxy resin to a thermosetting resin, and may adjust thermosetting.
As the curing agent, for example, amine-based curing agents such as diaminodiphenyl sulfone, dicyandiamide, diaminodiphenylmethane, and triethylenetetramine, acid anhydride-based curing agents, and the like can be used.
In addition, the novolac-type phenol resin or the like can be contained in the thermosetting resin as a curing agent for curing the epoxy resin.
Examples of the curing accelerator include imidazoles, amine-based curing accelerators such as triphenyl phosphate (TPP), and boron trifluoride monoethylamine.

  On the other hand, when a phenol resin is employed as the thermosetting resin, hexamethylenetetramine, various bifunctional or higher functional epoxy compounds, isocyanates, trioxane, cyclic formal and the like may be included as a curing agent for the phenol resin. .

The inorganic filler is not particularly limited as long as the thermal conductivity is higher than that of the thermosetting resin. For example, boron nitride, aluminum nitride, silicon nitride, gallium nitride, aluminum oxide, silicon carbide, silica (such as silicon dioxide), Examples of the particles include magnesium oxide and diamond. Examples of the silica particles include fumed silica and silica obtained by a sol-gel method. As the fumed silica, Aerosil (registered trademark) manufactured by Nippon Aerosil Co., Ltd. can be used.
As the inorganic filler, fumed silica is preferable. The fumed silica content in the insulating layer is preferably 0.5 to 20 parts by mass and more preferably 1.0 to 10 parts by mass with respect to 100 parts by mass of the thermosetting resin.

  Examples of the organic solvent include methyl ethyl ketone and toluene.

In the raw material sheet forming step, the resin composition material is mixed using a stirrer to produce a resin composition.
Examples of the stirring device include a ball mill, a planetary mixer, a homogenizer, and a three-roll mill.

The material of the support sheet used in the raw material sheet forming step is not particularly limited. For example, resin films such as polyester resin films, polyolefin resin films, polyimide resin films, copper foils, aluminum foils, nickel It can be a metal foil such as a foil.
Especially, it is preferable to use a polyethylene terephthalate resin film for the said support sheet at the point that external formability is good and it is cheap.
The support sheet may be subjected to a treatment such as a roughening treatment or a release treatment on the surface on which the resin composition is applied, or may be in an untreated state.
The support sheet is preferably in the form of a long strip in order to produce the raw material sheet continuously and efficiently.

In the raw material sheet forming step, a support sheet roll obtained by winding a long belt-like support sheet is mounted on the coating apparatus. Examples of the coating apparatus include a gravure roll coater, a reverse roll coater, a kiss roll coater, a knife coater, a comma coater, and a direct coater.
Next, the resin composition is continuously applied to the support sheet.
And the support sheet | seat with which the said resin composition was apply | coated is introduce | transduced into a drying furnace, the organic solvent is removed, the dry film of a resin composition is formed on a support sheet | seat, and a raw material sheet | seat is produced. The removal of the organic solvent can be performed, for example, by passing a belt-like support sheet coated with the resin composition through a general heating and drying furnace over a predetermined time.

  In the cutting step, it is important to perform the cutting by heating the insulating layer. In the cutting step, since the cutting is performed by heating the insulating layer, the cutting is performed in a state where the thermosetting resin of the insulating layer of the raw material sheet is softened from room temperature (for example, 23 ° C.). Thus, when the raw material sheet is cut, the insulating heat radiation sheet and the insulating layer of the raw material sheet are less likely to be cracked and chipped, and further, the insulating layer is less likely to be cut.

In addition, it is preferable to use fumed silica as the inorganic filler from the viewpoint of suppressing the insulating layer from being excessively softened by heating the insulating layer. Since fumed silica has a smaller particle size than other inorganic fillers, use of fumed silica as the inorganic filler suppresses a decrease in the viscosity of the insulating layer when the insulating layer is heated. can do. As a result, it can suppress that an insulating layer softens too much.
In particular, since the phenol resin has a relatively low glass transition temperature, the insulating layer is easily softened when the insulating layer contains the phenol resin. Therefore, when a phenol resin is contained in the insulating layer, the effect of suppressing the softening of the insulating layer by the fumed silica is easily exhibited.
If the amount of fumed silica is small, the insulating layer tends to be softened excessively. On the other hand, if the amount of fumed silica is large, it is difficult to mix with the thermosetting resin, so fumed silica is added to 100 parts by mass of the thermosetting resin. It is preferable that it is 0.5-20 mass parts with respect to it, and it is more preferable that it is 1.0-10 mass parts.

In the cutting step, the cutting is preferably performed in a state where the insulating layer is heated to a temperature equal to or higher than (the glass transition temperature of the thermosetting resin + 10 ° C.) by heating the insulating layer. It is more preferable to perform the cutting in a state where the temperature is equal to or higher than (the glass transition temperature of the thermosetting resin + 20 ° C.). In addition, a glass transition temperature means the midpoint glass transition temperature in JISK7121: 2012. In addition, the temperature of the insulating layer means the temperature at a location where the insulating layer is to be cut. The temperature of the insulating layer can be measured by thermography.
In the cutting step, the cutting is performed in a state in which the thermosetting resin is sufficiently softened by performing the cutting in a state where the insulating layer is at a temperature equal to or higher than the glass transition temperature of the thermosetting resin + 10 ° C. Can be implemented.
Moreover, in the said cutting process, it is preferable to implement the said cutting | disconnection in the state which made the said insulating layer the temperature below (hardening start temperature of the said thermosetting resin-20 degreeC) by heating the said insulating layer. The curing start temperature means a temperature at which the viscosity starts to increase when the thermosetting resin is heated.
In the cutting step, the cutting of the thermosetting resin can be suppressed by performing the cutting in a state where the insulating layer is set to a temperature equal to or lower than (the curing start temperature of the thermosetting resin −20 ° C.). The cutting can be performed with the thermosetting resin softened.
In the cutting step, the raw material sheet is introduced into a heating furnace maintained at a predetermined temperature, and the insulating layer is heated. This heating can be carried out, for example, by passing the raw material sheet through a general heating furnace over a predetermined time.

The cutting can be performed by a punching press using a punch and a die.
From the viewpoint that the raw material sheet can be cut cleanly, the temperature of the blade used in the cutting is preferably lower than the temperature of the insulating layer, and is (the temperature of the insulating layer −10 ° C.) or less. More preferably.

In the cutting step, a dicing tape is laid on a table, a raw material sheet is placed on the dicing tape, and the raw material sheet is cut from above. By using the dicing tape, when the raw material sheet is cut, it is possible to prevent the raw material sheet from being displaced from the base and cutting a portion that is displaced from the portion to be cut.
In the cutting step, when the material sheet is placed on the dicing tape, the insulating layer is placed on the upper side. Thereby, there exists an advantage that it can suppress that a burr | flash generate | occur | produces in a support layer.

At the time of cutting, the raw material sheet may be in a state in which a sheet-like separator is provided on the surface of the insulating layer opposite to the supporting layer, that is, the supporting layer, the insulating layer, and the separator. In this case, when placing the raw material sheet on the dicing tape in the cutting step, it is preferable that the support layer be on the upper side. Thereby, there exists an advantage that a separator becomes the play (cutting allowance) at the time of a cutting | disconnection, and a support layer and an insulating layer can be cut | disconnected reliably. Moreover, since a raw material sheet | seat will be cut | disconnected from the support layer side which covers an insulating layer, there also exists an advantage that it can suppress that the thermosetting resin which comprises an insulating layer adheres to a blade. In this case, from the viewpoint of suppressing generation of burrs in the support layer, the support sheet serving as the support layer is preferably a resin film such as a polyester resin film, a polyolefin resin film, or a polyimide resin film.
Further, since the separator is bonded to the dicing tape, there is an advantage that the obtained insulating sheet can be easily peeled off from the separator after the raw material sheet is cut.
Examples of the sheet-like separator include resin films such as a polyester resin film, a polyolefin resin film, and a polyimide resin film.

  Since the insulating layer is in a semi-cured (B-stage) state, the insulating heat-radiating sheet produced by the method of manufacturing an insulating heat-dissipating sheet of this embodiment is excellent in adherend using the curing reaction of the insulating layer. It has the advantage that it can be bonded with an adhesive force. Whether or not the insulating layer is in a semi-cured state can be confirmed by observing an exothermic peak associated with the curing reaction when differential scanning calorimetry (DSC) is performed. The determination can be made by comparing the DSC chart of the heat-cured insulating layer with the DSC chart of the insulating layer before applying heat, and whether a clear exothermic peak is observed.

Further, the insulating heat-radiating sheet is cured, so that the volume resistivity is preferably 1.0 × 10 ¹³ Ωcm or more, more preferably 1.0 × 10 ^{14 to} 1.0 × 10 ¹⁶ Ωcm.
The volume resistivity means a value measured according to JIS C 2139: 2008.

Next, the raw material sheet of this embodiment is demonstrated.
The raw material sheet of this embodiment is a raw material sheet for producing an insulating heat dissipation sheet by cutting. Moreover, the raw material sheet of this embodiment has the insulating layer containing an inorganic filler and a thermosetting resin, and the support layer laminated | stacked on this insulating layer. The cutting is performed by heating the insulating layer.

Next, the manufacturing method of the semiconductor module of this embodiment is demonstrated.
In the method for manufacturing a semiconductor module according to this embodiment, a semiconductor module including a semiconductor element and an insulating layer for electrically insulating the semiconductor element from the outside is manufactured. Moreover, in the manufacturing method of the semiconductor module of this embodiment, the said insulating layer is formed with the insulating heat dissipation sheet obtained by the manufacturing method of the insulating heat dissipation sheet of this embodiment.

FIG. 1 is a schematic view showing a cross section of a semiconductor module.
As shown in FIG. 1, the semiconductor module 100 of this embodiment is insulated between a module body 100x in which a semiconductor element 30 is resin-molded and a heat dissipation member 20 for radiating heat generated by the semiconductor element 30. A heat dissipating sheet 10 is interposed.

The module body 100x includes the semiconductor element 30 and a metal plate 40 that functions as a heat sink for the semiconductor element 30, and is fixed to the upper surface side of the metal plate 40 that is placed flat by solder 50. The semiconductor element 30 is included.
The semiconductor element 30 is smaller than the area of the upper surface of the metal plate 40 and is mounted on the metal plate 40 in a bare chip state in this embodiment.

The module main body 100x of the present embodiment includes a rectangular tube-shaped case 60 that forms an outer shell thereof, and the case 60 has a shape that is slightly larger than that of the metal plate 40 in a plan view and a shape in a front view. However, the insulating heat-radiating sheet 10, the metal plate 40, and the semiconductor element 30 are formed higher than the total height.
That is, the case 60 has a size capable of including all of the insulating heat radiating sheet 10, the metal plate 40, and the semiconductor element 30.
The module body 100x further includes the case 60 disposed so as to surround the metal plate 40, and further includes a lead frame 70 that penetrates the side wall of the case 60 and extends inside and outside the case.

In addition, the module body 100x has an end portion of the lead frame 70 in the case electrically connected to the semiconductor element 30 by a bonding wire 80, and an empty space in the case is filled with sealing resin. The mold part 90 is formed.
In the present embodiment, the mold portion 90 has the semiconductor element 30 and the metal plate 40 embedded therein.
And the insulation heat dissipation sheet 10 of this embodiment is distribute | arranged to the lower surface of the metal plate 40 used as the opposite side to the side in which the said semiconductor element 30 is mounted.
The insulating heat-radiating sheet 10 of the present embodiment has a shape corresponding to the lower surface of the metal plate 40 in a plan view, and the metal plate 40 is aligned with the lower outer edge 40e of the metal plate 40 and the outer edge of the insulating layer 11. Bonded to the lower surface of the plate 40.
In addition, the insulating heat dissipation sheet 10 of the present embodiment is used for forming the semiconductor module 100 so that the upper surface side is embedded in the mold portion 90 and the lower surface side is exposed when the heat dissipation member 20 is not present. Yes.
That is, the semiconductor module 100 of the present embodiment is formed such that the lower surface of the mold part 90 is substantially flush with the lower surface of the support layer 12 of the insulating heat radiating sheet 10.

  In the present embodiment, as the heat radiating member 20, a plate-like substrate portion 21 whose upper surface is a flat surface larger than the lower surface of the metal plate 40 and a plurality of fins are suspended from the lower surface of the substrate portion 21. A heat dissipating fin having a fin portion 22 is employed.

Note that the semiconductor module 100 of this embodiment includes the heat and pressure of the sealing resin when the mold portion 90 is formed when the upper surface of the B-staged insulating layer 11 is bonded to the lower surface of the metal plate 40. Is being used.
That is, before the formation of the mold part 90, the metal plate 40 and the insulating heat-radiating sheet 10 are not temporarily bonded to each other, or are not bonded at all. In the sheet 10, the insulating layer 11 and the lower surface of the metal plate 40 are pressed in a heated state when a sealing resin heated and melted so as to form the mold portion 90 is press-filled in the case. 40 is bonded and fixed.

Further, the insulating heat dissipation sheet 10 is provided in the semiconductor module 100 by finally forming the insulating layer 11 into a C-stage by heat when forming the mold portion 90 and additional heating performed as necessary. Yes.
In this way, the insulating heat radiating sheet 10 constituting a part of the semiconductor module 100 is exposed here only on the lower surface side of the support layer 12 on the lower surface of the module body 100x.
The insulating heat dissipation sheet 10 of the present embodiment has the support layer 12 formed of metal foil, and the exposed surface of the metal foil is used as a main heat dissipation surface from the module main body 100x to the heat dissipation member 20. The semiconductor module 100 is provided.

Since the insulating heat dissipation sheet 10 of the present embodiment is adhered to the module body 100x using the adhesiveness of the insulating layer 11 as described above, the support layer 12 does not exhibit adhesiveness. The heat radiating member 20 is in contact with the heat radiating member 20 by being bonded and fixed to the module main body 100x.
More specifically, the insulating heat radiation sheet 10 of the present embodiment is in contact with the upper surface of the substrate portion 21 of the heat radiation member 20 with heat radiation grease interposed therebetween.

As described above, in the semiconductor module 100 of the present embodiment, the semiconductor element 30 is directly mounted on the metal plate 40, and the semiconductor element 30 and the metal plate 40 have substantially the same potential.
Therefore, the insulating heat radiating sheet 10 forms a good heat transfer path between the metal plate 40 and the heat radiating member 20, and the electrical connection between the metal plate 40 and the heat radiating member 20 is cut off. Therefore, the semiconductor module 100 is provided.

  The insulating heat-radiating sheet 10 according to the present embodiment has almost no chips, and the insulating layer 11 of the insulating heat-radiating sheet 10 is hardly cracked or chipped. Has excellent electrical insulation and thermal conductivity. Therefore, it is possible to suppress an excessive increase in the junction temperature of the semiconductor element 30 during the operation of the semiconductor module 100, thereby preventing a failure of the semiconductor module 100 and extending the useful life.

Such an effect is not limited to the embodiment illustrated in FIG. 1 but also in the semiconductor module illustrated in FIG.
This will be described with reference to FIG.
2 is a schematic diagram showing a cross section of the semiconductor module as in FIG. 1. In FIG. 2, the components denoted by the same reference numerals as those in FIG. 1 are the same as those in FIG. The explanation will not be repeated more than necessary.

  The semiconductor module 100 ′ shown in FIG. 2 is different from the semiconductor module 100 shown in FIG. 1 in that it does not have a support layer for an insulating heat radiation sheet.

  Further, in the semiconductor module 100 ′, an insulating layer 11 ′ of an insulating heat radiating sheet is formed to be equivalent to the planar shape of the case 60 ′, and the mold part 90 ′ is substantially flush with the lower surface of the metal plate 40 ′. 1 is also different from the semiconductor module 100 of FIG.

  The insulating layer 11 ′ is used by being bonded to the lower surface of the module body 100 x ′, which is a main part of the semiconductor module 100 ′ excluding the insulating layer 11 ′, and insulates the metal plate 40 ′ to provide a semiconductor module. Used to construct 100 '.

  Further, as shown in FIG. 2, the insulating layer 11 'is interposed between the module main body 100x' and the heat radiating member 20 '.

When forming the semiconductor module 100 ′ as shown in FIG. 2 using the insulating heat dissipation sheet, the insulating layer 11 ′ is bonded after the insulating layer 11 ′ of the insulating heat dissipation sheet is first bonded to the module body side. Further, the heat radiating member 20 ′ may be further adhered using a heat sink, and conversely, the insulating layer 11 ′ is once adhered to the upper surface of the substrate portion 21 ′ of the heat radiating member 20 ′ to produce a heat radiating member with an insulating layer. After that, the heat dissipation member with an insulating layer may be adhered to the module main body 100x ′.
Further, the insulating layer 11 ′ is bonded to the module main body 100 x ′ and the heat radiating member 20 ′ at the same time by, for example, hot pressing the insulating layer 11 ′ between the module main body 100 x ′ and the heat radiating member 20 ′. You may do it.

Even in such a case, since the C-staged insulating heat radiating sheet 10 ′ exhibits excellent electrical insulation and thermal conductivity, the semiconductor module 100 ′ including the insulating heat radiating sheet 10 ′ as a constituent member is The service life can be extended.
Although the detailed description is not repeated here any more, for example, in the embodiment illustrated in FIG. 2, it is possible to have a support layer in addition to the insulating layer.
Moreover, about the heat conductive sheet of this invention, a conventionally well-known technical matter can be suitably employ | adopted in the range in which the effect of this invention is not impaired remarkably.

  In the present invention, the resin composition used as the material for forming the insulating heat radiation sheet can also be used for forming the mold parts 90, 90 ', the cases 60, 60', and the like.

Although the embodiment of the present invention has been described above, it is also planned from the beginning to combine the features of the embodiment as appropriate.
In addition, it should be considered that the embodiment disclosed this time is illustrative and not restrictive in all respects.
The scope of the present invention is shown not by the above-described embodiment but by the scope of claims, and is intended to include all modifications within the meaning and scope equivalent to the scope of claims.

<Raw material sheet>
Insulating layer (thickness: 150 μm) containing boron nitride as an inorganic filler, epoxy resin and phenol resin as thermosetting resin, and triphenyl phosphate (TPP) as a curing accelerator, A raw material sheet (length 100 mm × width 100 mm × thickness 220 μm) comprising a laminated support layer (copper foil, thickness: 70 μm) was prepared.
The glass transition temperature of the thermosetting resin was 45 ° C.

<Cutting test>
Dicing tape was laid on the table. The raw material sheet was placed on the dicing tape so that the insulating layer was on the upper side. By blowing hot air on the raw material sheet with a dryer, it was confirmed that the location where the raw material sheet was to be cut was at the temperature shown in Table 1, and the raw material sheet was cut laterally from the insulating layer side with a blade, 10 mm in length × An insulating sheet having a width of 100 mm was obtained.
The amount of chips produced was confirmed visually. It was judged as “◎”, “◯”, “Δ”, “×” in the order of decreasing chips and chips. The results are shown in Table 1.
The temperature at the location where the insulating layer was to be cut was confirmed by thermography.
Moreover, the viscosity of the insulating layer at the temperature of Table 1 was measured under the following conditions.
Viscosity: Rheometer Temperature increase: 1 ° C / min (range of 30-200 ° C)
Measurement mode: Torsion (distortion: 0.03%)
Sample: Raw material sheet (vertical 10 mm × width 50 mm × thickness 150 μm)

10: Insulating heat dissipation sheet, 11: Insulating layer, 12: Support layer, 20: Member for heat dissipation, 30: Semiconductor element, 40: Metal plate, 100: Semiconductor module, 100x: Module body

Claims (5)

Comprising an insulating layer containing an inorganic filler and a thermosetting resin, a cutting step of preparing a more insulating and heat radiating sheet to cut the material sheet having a support layer laminated on the insulating layer, the insulating heat dissipating sheet A manufacturing method comprising:
In the cutting step, the insulating heat dissipation sheet is manufactured by heating the insulating layer to perform the cutting.   2. The insulation according to claim 1, wherein, in the cutting step, the cutting is performed in a state where the insulating layer is heated to a temperature equal to or higher than (a glass transition temperature of the thermosetting resin + 10 ° C.). Manufacturing method of heat dissipation sheet.   The manufacturing method of the insulation thermal radiation sheet of Claim 1 or 2 with which the said inorganic filler contains a fumed silica.   The said insulating layer is a manufacturing method of the insulation heat dissipation sheet | seat of Claim 3 containing 0.5-20 mass parts of said fumed silica with respect to 100 mass parts of said thermosetting resins. A semiconductor module manufacturing method for manufacturing a semiconductor module comprising a semiconductor element and an insulating layer for electrically insulating the semiconductor element from the outside,
The manufacturing method of a semiconductor module which forms the said insulating layer with the insulation heat dissipation sheet obtained with the manufacturing method of the insulation heat dissipation sheet of any one of Claims 1-4.

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