JP6536177B2 - Semiconductor device - Google Patents

Description

  The present invention relates to a semiconductor device and an adhesive sheet.

  There is known an adhesive sheet (die bond dicing sheet) which is obtained by laminating a film adhesive used in a wafer back surface adhesion method and a dicing tape and which has both functions in one sheet (see, for example, Patent Document 1) . The adhesive sheet described in Patent Document 1 has, for example, a four-layer structure of peelable sheet / adhesive layer / pressure-sensitive adhesive layer / substrate sheet. A buried semiconductor device has been developed in which a semiconductor chip adhesively fixed on a support member is sealed with a sealing material using an adhesive sheet that functions as such a die bond dicing sheet.

Japanese Patent Laid-Open No. 7-44557

  In the manufacturing process of the above-described embedded semiconductor device, at the same time as the semiconductor chip is embedded by the adhesive layer, the adhesive layer corresponding to the volume of the embedded semiconductor chip may protrude in the lateral direction of the semiconductor chip. In order to obtain a small semiconductor device, it is necessary to perform singulation at a position close to the end of the embedded semiconductor chip. When the cured product of the adhesive layer is exposed from the surface of the sealing material on the outer surface of the obtained semiconductor device or when the cured product of the adhesive layer is transparent from the surface of the sealing material, the appearance defect of the device It may occur.

  The present invention has been made to solve the above problems, and an object of the present invention is to provide a semiconductor device and an adhesive sheet which can suppress the occurrence of appearance defects.

  A semiconductor device according to one aspect of the present invention seals a support member, a cured product of an adhesive layer provided on the support member, a semiconductor chip provided on the cured product of the adhesive layer, and the semiconductor chip And the color of the cured product of the adhesive layer is the same as the color of the seal.

  In this semiconductor device, the color of the cured product of the adhesive layer is the same as the color of the sealing material. Therefore, even when the cured product of the adhesive layer is exposed from the surface of the sealing material on the outer surface of the semiconductor device or the cured product of the adhesive layer is transparent from the surface of the sealing material, It becomes possible to show the cured product and the sealing material integrally. Therefore, the occurrence of the appearance defect of the device can be suppressed.

  The cured product of the adhesive layer may be exposed from the surface of the encapsulant. When the cured product of the adhesive layer is exposed from the surface of the sealing material, appearance defects due to the difference between the color of the cured product of the adhesive layer and the color of the sealing material are particularly likely to occur. Therefore, the appearance defect of the device can be suitably suppressed by making the color of the cured product of the adhesive layer the same as the color of the sealing material.

  The lightness of the cured product of the adhesive layer may be the same as the lightness of the sealing material. In this case, the cured product of the adhesive layer and the sealing material can be shown more reliably integrally.

  The saturation of the cured product of the adhesive layer may be the same as the saturation of the sealing material. In this case, the cured product of the adhesive layer and the sealing material can be shown more reliably integrally.

  The color of the cured product of the adhesive layer may be the same as or adjacent to the color of the sealing material and the color wheel. In this case, the cured product of the adhesive layer and the sealing material can be shown more reliably integrally.

  The color of the cured product of the adhesive layer may be the same as the color of the sealing material. In this case, the cured product of the adhesive layer and the sealing material can be shown more reliably integrally.

  An adhesive sheet according to one aspect of the present invention is an adhesive sheet used for manufacturing a semiconductor device formed by sealing a semiconductor chip provided on a support member with a sealing material via a cured product of an adhesive layer. And an adhesive layer provided on one side of the peelable sheet, an adhesive layer provided on the adhesive layer so as to cover the adhesive layer, and an adhesive layer so as to cover the adhesive layer. And a base sheet provided on the agent layer, and the color after curing of the adhesive layer becomes the same as the color of the sealing material.

  This adhesive sheet is used for manufacturing a semiconductor device, and the color after curing of the adhesive layer becomes the same as the color of the sealing material. Therefore, even when the cured product of the adhesive is exposed from the surface of the sealing material on the outer surface of the manufactured semiconductor device or the cured product of the adhesive layer is seen through the surface of the sealing material, the adhesive It is possible to make the cured product of the layer and the sealing material appear integrally. Therefore, the occurrence of the appearance defect of the device can be suppressed.

  The lightness of the cured product of the adhesive layer may be the same as the lightness of the sealing material. In this case, the cured product of the adhesive layer and the sealing material can be shown more reliably integrally.

  The chroma of the cured product of the adhesive layer may be the same as the chroma of the encapsulant. In this case, the cured product of the adhesive layer and the sealing material can be shown more reliably integrally.

  The color of the cured product of the adhesive layer may be the same as or adjacent to the color of the sealing material and the color wheel. In this case, the cured product of the adhesive layer and the sealing material can be shown more reliably integrally.

  The color of the cured product of the adhesive layer may be the same as the color of the encapsulant. In this case, the cured product of the adhesive layer and the sealing material can be shown more reliably integrally.

  The viscosity at 80 ° C. of the adhesive layer may be 10000 Pa · s or less. In this case, the embedding property of the semiconductor chip by the adhesive layer can be sufficiently enhanced in the die bonding step using the adhesive sheet.

  A state in which a plurality of laminates formed by laminating the adhesive layer, the pressure-sensitive adhesive layer, and the base sheet are disposed apart from each other along the longitudinal direction of the peelable sheet while the peelable sheet has a long shape. May be wound in a roll shape. In this case, since the laminated body and the semiconductor wafer can be sequentially bonded while drawing the adhesive sheet from the roll, the productivity of the semiconductor device can be improved.

  According to the present invention, the appearance defect of the semiconductor device can be suppressed.

It is a perspective view of a semiconductor device concerning an embodiment. It is sectional drawing along the II-II line of FIG. It is sectional drawing along the III-III line of FIG. It is a perspective view of the adhesive sheet used in order to manufacture the semiconductor device of FIG. It is the top view and sectional drawing of the adhesive sheet of FIG. It is a figure which shows the state which bonded the laminated body and the semiconductor wafer. It is a figure which shows the state which is dicing the semiconductor wafer of FIG. It is a figure which shows the state which is picking up the singulated semiconductor wafer of FIG. 7, and an adhesive bond layer. It is a top view of the 1st semiconductor chip provided on the substrate. It is a figure which shows the state which die-bonded the 2nd semiconductor chip of FIG. 8 on the 1st semiconductor chip of FIG. It is a figure which shows the state which wire-bonded the 2nd semiconductor chip of FIG. 10 on the board | substrate. It is a figure for demonstrating the modification of the manufacturing method of a semiconductor device.

  Hereinafter, the present embodiment will be described in detail with reference to the attached drawings. In the description, the same elements or elements having the same function will be denoted by the same reference symbols, without redundant description.

(Semiconductor device)
The configuration of the semiconductor device 10 according to the embodiment will be described with reference to FIGS. 1 to 3. FIG. 1 is a perspective view of a semiconductor device according to the embodiment. FIG. 2 is a cross-sectional view taken along line II-II of FIG. FIG. 3 is a cross-sectional view taken along the line III-III of FIG.

  As shown in FIGS. 1 to 3, the semiconductor device 10 has a substantially rectangular parallelepiped shape. The semiconductor device 10 includes outer surfaces 10a to 10f as device outer surfaces. The outer surfaces 10a and 10b face each other. The outer surfaces 10c and 10d face each other. The outer surfaces 10e and 10f face each other. The opposing direction of the outer surfaces 10a and 10b, the opposing direction of the outer surfaces 10c and 10d, and the opposing direction of the outer surfaces 10e and 10f are orthogonal to each other.

  As shown in FIG. 2 and FIG. 3, the semiconductor device 10 is provided on the supporting member 11, the first semiconductor chip S1, the cured product 12 of the adhesive layer, and the cured product 12 of the adhesive layer. A semiconductor chip S2 and a sealing material 13 are provided.

  The support member 11 is a flat plate having a substantially rectangular shape in a plan view. Here, the support member 11 has a substantially rectangular shape in a plan view. The support member 11 is, for example, a lead frame. One main surface of the support member 11 forms the outer surface of the semiconductor device 10. The side surface of the support member 11 forms a part of the outer surfaces 10 c to 10 f of the semiconductor device 10.

  The first semiconductor chip S1 has a substantially rectangular shape in plan view. Here, the first semiconductor chip S1 has a substantially rectangular shape in plan view. The first semiconductor chip S1 is fixed on the other main surface of the support member 11 via a cured product 14 formed by curing a silver paste or a film-like adhesive layer. The first semiconductor chip S1 is wire-bonded to the support member 11 by a plurality of wires W1.

  The cured product 12 of the adhesive layer is a cured product obtained by curing the adhesive layer 23p (see FIG. 8). The adhesive layer 23p will be described later. The cured product 12 of the adhesive layer is provided on the support member 11 so as to embed the wire W1 and the first semiconductor chip S1. The color of the cured product 12 of the adhesive layer is black.

  As shown in FIG. 1, the cured product 12 of the adhesive layer is exposed from the surface of the sealing material 13 in the outer surfaces 10e and 10f (see FIG. 2) of the semiconductor device 10, and the exposed portion 12a is the outer surface 10e, It is part of 10f. The cured product 12 of the adhesive layer is not exposed to the outer surfaces 10 a to 10 d (see FIG. 3) of the semiconductor device 10.

  The exposed portion 12a has a band-like shape or a substantially rectangular shape. The exposed portion 12a extends along the opposing direction of the outer surface 10e and the outer surface 10f (see FIG. 2) at a position relative to the support member 11. Here, the substantially rectangular shape means that the corner portion includes a rounded shape. The exposed portion 12a is the periphery of the outer surfaces 10e and 10f on the outer surfaces 10e and 10f (that is, the end on the outer surfaces 10a to 10d (see FIG. 3) of the outer surface 10e and the end on the outer surfaces 10a to 10d of the outer surface 10f) Away from The exposed portion 12a is also spaced apart from the side surface of the support member 11 on the outer surfaces 10e and 10f.

  The second semiconductor chip S2 has a substantially rectangular shape in plan view. Here, the second semiconductor chip S2 has a substantially rectangular shape in a plan view. The area of the second semiconductor chip S2 in plan view is one size larger than the area of the first semiconductor chip S1 in plan view. The second semiconductor chip S2 is wire-bonded to the support member 11 by a plurality of wires W2.

  The sealing material 13 is made of, for example, an epoxy resin, a curing agent, a curing accelerator, and a filler. The sealing material 13 seals the wire W2 and the second semiconductor chip S2. The sealing material 13 constitutes a part of the outer surfaces 10 c to 10 f of the semiconductor device 10 and the outer surface 10 b. The color of the sealing material 13 is black similarly to the cured product 12 of the adhesive layer.

  In the semiconductor device 10, as described above, the cured product 12 of the adhesive layer is exposed to the outer surfaces 10e and 10f of the semiconductor device 10. That is, the cured product 12 of the adhesive layer is exposed in a strip or substantially rectangular shape from the surface of the sealing material 13, and the sealing material is viewed from the support member 11 side on the outer surfaces 10 e and 10 f of the semiconductor device 10. 13, exposed portions 12a of the cured product 12 of the adhesive layer, and the sealing material 13 are alternately arranged.

  With respect to such a configuration, in the semiconductor device 10, the cured product 12 of the adhesive layer and the sealing material 13 both have a black color. Therefore, on the outer surfaces 10 e and 10 f of the semiconductor device 10, the exposed portion 12 a of the cured product 12 of the adhesive layer and the sealing material 13 have the same color, so that the exposed portion 12 a looks integrated with the sealing material 13. Become.

  The cured product 12 of the adhesive layer and the sealing material 13 do not necessarily have to be black, as long as they have the same color. The same color means that the difference in color is less noticeable than in the case of the same color. For example, when making the hardened | cured material 12 and the sealing material 13 of an adhesive bond layer into the same color, it is good also as each dark color, such as blue, green, brown. Alternatively, one of the cured product 12 of the adhesive layer and the sealing material 13 may be black, and the other may be dark, such as blue, green, or brown.

  Further, the lightness of the cured product 12 of the adhesive layer may be the same as the lightness of the sealing material 13, and the saturation of the cured product 12 of the adhesive layer may be the same as the saturation of the sealing material 13. Specifically, in the color sample book 2015 H edition issued by the Japan Paint Industry Association, the color of the cured product 12 of the adhesive layer and the color of the sealing material 13 are 0 to 55 in the achromatic case. The brightness may be close to zero. The color of the cured product 12 of the adhesive layer and the sealant 13 may be color sections 05, 19, 22, 25, 25, 45, 45, 55, 65, 75, 85, 95. The color of the cured product 12 of the adhesive layer and the sealing material 13 may have a lightness of 40 or less in any color division, and may have a lightness close to 0.

  In addition, the color of the cured product 12 of the adhesive layer and the color of the sealing material 13 may be similar. That is, the color of the cured product 12 of the adhesive layer may be the same as or adjacent to the color of the sealing material 13 in the hue circle. For example, in the hue circle of the Japanese Color Research Institute (PCCS), 24 hues are continuous in the order of red → orange → yellow → green → blue → blue → purple → purple. Therefore, one of the adjacent hues in this hue circle may be selected as the color of the cured product 12 of the adhesive layer, and the other may be selected as the color of the sealing material 13. The color of the cured product 12 of the adhesive layer and the color of the sealing material 13 do not necessarily have to be the same or adjacent colors in the hue circle, and it is not necessary to have at least a complementary color relationship.

(Adhesive sheet)
The configuration of the adhesive sheet 20 used to manufacture the semiconductor device 10 will be described with reference to FIGS. 4 and 5. FIG. 4 is a perspective view of an adhesive sheet used to manufacture the semiconductor device of FIG. Fig.5 (a) is a top view of the adhesive sheet of FIG. FIG.5 (b) is sectional drawing along the Vb-Vb line | wire of FIG. 5 (a). The adhesive sheet 20 is a die bond dicing sheet used to manufacture the semiconductor device 10.

  As shown in FIG. 4 and FIG. 5, the adhesive sheet 20 has a long length, and is wound around a cylindrical winding core 21 in a roll shape. The adhesive sheet 20 includes a peelable sheet 22, and a laminate L formed by laminating an adhesive layer 23, an adhesive layer 24, and a base sheet 25 in this order.

  The peelable sheet 22 is a long sheet or film. The longitudinal direction of the peelable sheet 22 coincides with the longitudinal direction of the adhesive sheet 20. The peelable sheet 22 is wound in a roll around the winding core 21 in a state where the plurality of laminates L are disposed apart from each other along the longitudinal direction of the peelable sheet 22.

  The peelable sheet 22 is, for example, a polyester film such as a polyethylene terephthalate film, a polytetrafluoroethylene film, a polyethylene film, a polypropylene film, a polymethyl pentene film, a polyolefin film such as a polyvinyl acetate film, a polyvinyl chloride film, a polyimide film And other plastic films. The peelable sheet 22 may be made of, for example, paper, non-woven fabric, metal foil or the like.

  One surface (one surface) 22 a of the peelable sheet 22 may be a release surface treated with a release agent such as a silicone release agent, a fluorine release agent, or a long chain alkyl acrylate release agent. The thickness of the peelable sheet 22 is suitably set in the range which does not impair workability. The thickness of the peelable sheet 22 is usually 1000 μm or less, preferably 1 to 100 μm, more preferably 2 to 20 μm, and particularly preferably 3 to 10 μm.

  The adhesive layer 23 is provided on one surface 22 a of the peelable sheet 22. The adhesive layer 23 has a substantially circular shape in a plan view. The adhesive layer 23 is composed of various known thermosetting adhesives, photocurable adhesives, thermoplastic adhesives or oxygen-reactive adhesives used for bonding (bonding) of semiconductor chips. The adhesive layer 23 may consist of these alone, or may consist of a combination of two or more.

  The thickness of the adhesive layer 23 is usually 1 to 200 μm, preferably 3 to 150 μm. The thickness of the adhesive layer 23 is more preferably 40 to 140 μm for use in embedding a wire and a semiconductor chip. When the thickness of the adhesive layer 23 is thinner than 40 μm, it becomes difficult to embed the wire and the semiconductor chip sufficiently. In addition, if the thickness of the adhesive layer 23 is thicker than 200 μm, the amount of adhesive used increases, which may increase the manufacturing cost of the semiconductor device 10.

  The adhesive layer 23 is, for example, colored in black beforehand by the addition of a dye. The adhesive layer 23 may not be discolored before and after curing, and may be discolored before and after curing. When the adhesive layer 23 is discolored before and after curing, it may be discolored along with the progress of the curing of the adhesive layer 23 or may be discolored by heat history.

  Generally, the method of manufacturing the semiconductor device 10 includes a sealing material curing step (for example, 170 ° C., about 3 hours) for curing the sealing material 13. Therefore, the adhesive layer 23 may be colored at, for example, 170 ° C. for about 3 hours. Further, in the sealing step (for example, 175 ° C., about 5 minutes) for sealing the second semiconductor chip S2 with the sealing material 13, the curing of the sealing material 13 is completed, and the manufacturing method of the semiconductor device 10 is sealing There is also a case where the material curing step is not included. Therefore, the adhesive layer 23 may be configured to be colored by a wire bonding step (generally 150 ° C., about 30 minutes) or a die bonding step (eg 120 ° C., about 1 minute). In this case, the adhesive layer 23 is colored, for example, at about 150 ° C. for about 30 minutes, or at about 120 ° C. for about 1 minute.

  In order to embed the first semiconductor chip S1 in the die bonding process, the adhesive layer 23 needs to flow sufficiently by the heat given in the die bonding process. The viscosity at 80 ° C. of the adhesive layer 23 is preferably 10000 Pa · s or less. When considering the embeddability of the first semiconductor chip S1, the viscosity at 80 ° C. of the adhesive layer 23 is preferably 5000 Pa · s or less, and more preferably 3000 Pa · s or less. The viscosity of the adhesive layer 23 at 80 ° C. was measured using a rotary viscometer (ARES-RDA) manufactured by TA Instruments Japan Co., Ltd., using a jig of 8 mm diameter and a sample with a thickness of 100 to 200 μm. It is done using As a measurement condition, for example, a strain of 5%, a torque of 200 g · cm, and an initial load of 100 g may be used.

  The pressure-sensitive adhesive layer 24 is provided on the adhesive layer 23 so as to cover the entire adhesive layer 23. The pressure-sensitive adhesive layer 24 has a substantially circular shape in plan view. The area of the pressure-sensitive adhesive layer 24 in plan view is one size larger than the area of the adhesive layer 23 in plan view. The peripheral portion of the pressure-sensitive adhesive layer 24 is provided so as not to overlap with the adhesive layer 23 and to be in direct contact with one surface 22 a of the peelable sheet 22.

  The components contained in the pressure-sensitive adhesive layer 24 are not particularly specified. The adhesive layer 24 is, for example, a compound having a diol group, an isocyanate compound, a urethane (meth) acrylate compound, a diamine compound, a urea methacrylate compound, a high energy ray polymerizable copolymer having an ethylenically unsaturated group in a side chain, etc. It consists of The component of the pressure-sensitive adhesive layer 24 is preferably a component having a small change in adhesiveness due to storage environment such as temperature, humidity, time, and presence or absence of oxygen, and more preferably a component having no change due to the environment. Further, the component of the adhesive layer 24 may be a component that is cured by ultraviolet rays, high energy rays such as radiation, or heat (that is, adhesion is reduced), and in particular, a component that is cured by high energy rays is preferable. Is preferably a component curable by ultraviolet light.

  The base sheet 25 is provided on the pressure-sensitive adhesive layer 24 so as to cover the entire pressure-sensitive adhesive layer 24. The base sheet 25 has a substantially circular shape in a plan view. The area of the base sheet 25 in plan view is the same as the area of the pressure-sensitive adhesive layer 24 in plan view. The entire base sheet 25 overlaps the pressure-sensitive adhesive layer 24. Thus, the substrate sheet 25 functions as a protective film for protecting the pressure-sensitive adhesive layer 24.

  The base sheet 25 can be composed of a sheet similar to the sheet forming the peelable sheet 22 or a film similar to the film forming the peelable sheet 22. That is, the base sheet 25 is, for example, a polyester-based film such as a polyethylene terephthalate film, a polytetrafluoroethylene film, a polyethylene film, a polypropylene film, a polymethylpentene film, a polyolefin-based film such as a polymethylpentene film, a polyvinyl chloride film, It consists of plastic films, such as a polyimide film. The thickness of the base sheet 25 is usually 10 to 500 μm, preferably 50 to 200 μm.

(Method of manufacturing semiconductor device)
A method of manufacturing the semiconductor device 10 according to the embodiment will be described with reference to FIGS. FIG. 6 is a view showing a state in which the laminate and the semiconductor wafer are bonded. FIG. 7 is a view showing a state in which the semiconductor wafer of FIG. 6 is diced. FIG. 8 is a view showing a state in which the singulated semiconductor wafer and the adhesive layer of FIG. 7 are picked up. FIG. 9 is a plan view of a first semiconductor chip provided on a substrate. FIG. 10 is a view showing a state in which the second semiconductor chip of FIG. 8 is die-bonded on the first semiconductor chip of FIG. FIG. 11 is a view showing a state in which the second semiconductor chip of FIG. 10 is wire-bonded on a substrate.

  First, the peelable sheet 22 is peeled and removed from the adhesive sheet 20 shown in FIG. 5 to expose the adhesive layer 23. The peeling and removal of the peelable sheet 22 is gradually performed from the periphery of the adhesive sheet 20.

  Subsequently, as shown in FIG. 6, the laminate L and the semiconductor wafer 26 are bonded. Specifically, of the exposed one surface 23a of the adhesive layer 23, the entire other surface 26b of the semiconductor wafer 26 is bonded to the central portion excluding the peripheral portion. Further, the other surface 27 b of the ring frame 27 for dicing is bonded to the peripheral portion of one surface 24 a of the pressure-sensitive adhesive layer 24, that is, the portion outside the adhesive layer 23. The ring frame 27 is an annular molded body made of metal or plastic. The inner diameter of the ring frame 27 is larger than the outer diameter of the semiconductor wafer 26 and larger than the outer diameter of the adhesive layer 23.

  Next, as shown in FIG. 7, the semiconductor wafer 26 and the adhesive layer 23 are cut into a predetermined size by a blade 28 such as a rotary blade (first dicing step). Here, the semiconductor wafer 26 and the adhesive layer 23 are cut in the thickness direction, and the adhesive layer 24 is cut. The adhesive layer 23 may not be completely cut in the thickness direction, and a portion which is not cut may be left as a part. Alternatively, only the semiconductor wafer 26 and the adhesive layer 23 may be cut so as not to cut the adhesive layer 24. In the first dicing step, the semiconductor wafer 26 and the adhesive layer 23 are simultaneously singulated to obtain a plurality of semiconductor wafer 26 p and adhesive layer 23 p pairs. Here, the semiconductor wafer 26 p corresponds to the second semiconductor chip S2.

  A commercially available dicer can be used for the first dicing step. Examples of the dicer include a full-automatic dicing saw 6000 series and a semi-automatic dicing saw 3000 series manufactured by Disco Corporation. Examples of the blade 28 include dicing blade NBC-ZH05 series, NBC-ZH series manufactured by Disco Corporation, and the like.

  In the first dicing step, a laser can be used instead of the blade 28. Examples of the laser-type dicer include a full automatic laser saw 7000 series manufactured by Disco Corporation.

  Next, ultraviolet rays or the like are irradiated to reduce the adhesion between the adhesive layer 23 p and the adhesive layer 24. Subsequently, as shown in FIG. 8, the second semiconductor chip S2 with the adhesive layer 23p is picked up (pickup step).

  Next, as shown in FIG. 9, the substrate 31 on which the first semiconductor chip S1 is fixed is prepared. The substrate 31 is, for example, a lead frame, a resist substrate, or the like. The first semiconductor chip S1 is fixed to the substrate 31 by a silver paste or a cured product 14 (see FIG. 2) of a film-like adhesive layer. Further, the first semiconductor chip S1 is wire-bonded to the substrate 31 by the wire W1. The wire bonding is performed on two sides of the opposing first semiconductor chip S1 in plan view.

  Subsequently, the second semiconductor chip S2 with the adhesive layer 23p is placed on the first semiconductor chip S1, and is heated and pressed (die bonding step). Thereby, as shown in FIG. 10, the adhesive layer 23p embeds the first semiconductor chip S1 and the wire W1. Here, if the embeddability is insufficient, additional embedding and heat curing are performed using a pressure oven as necessary.

  Next, as shown in FIG. 11, the second semiconductor chip S2 is wire-bonded to the substrate 31 by the wire W2 (wire bonding step). The wire bonding is performed on two sides of the opposing second semiconductor chip S2 in plan view.

  Subsequently, a sealing material is provided on the substrate 31 so as to cover the entire second semiconductor chip S2 and the cured product 12 of the adhesive layer. Thereby, 2nd semiconductor chip S2 is sealed by a sealing material (sealing process). Here, the process of hardening a sealing material as needed is performed (sealing material hardening process). In the steps up to this point, the adhesive layer 23 p is cured to form a cured product 12 of the adhesive layer.

  Next, the sealing material and the substrate 31 are cut into a predetermined size (second dicing step). For the second dicing step, for example, a dicer similar to the first dicing step can be used. The semiconductor device 10 is obtained by the second dicing step. That is, the singulated sealing material corresponds to the sealing material 13 (see FIG. 3), and the singulated substrate 31 corresponds to the support member 11 (see FIG. 3). 6 to 11 illustrate the case of using the substrate 31 provided with the first semiconductor chip S1 and the second semiconductor chip S2 of one set, but a plurality of first semiconductor chips S1 and a second semiconductor chip are illustrated. A substrate 31 provided with S2 may be used.

  In this case, as shown in FIG. 12, first, a substrate 31 provided with a plurality of sets of first semiconductor chips S1 and second semiconductor chips S2 is prepared. Here, a set of the first semiconductor chip S1 and the second semiconductor chip S2 is arranged in a grid of 5 × 3 on the substrate 31. Next, a sealing process and, if necessary, a sealing material curing process are performed. Thereafter, the substrate 31 is cut in a grid shape along a plurality of dicing lines D consisting of straight lines. Thereby, a plurality of semiconductor devices 10 can be obtained.

  As described above, in the semiconductor device 10, the cured product 12 of the adhesive layer is exposed in a strip or substantially rectangular shape from the surface of the sealing material 13 on the outer surfaces 10e and 10f. Thereby, on the outer surfaces 10e and 10f, the sealing material 13, the exposed portions 12a of the cured product 12 of the adhesive layer, and the sealing material 13 are alternately arranged as viewed from the support member 11 side. That is, the appearance defect due to the difference between the color of the cured product 12 of the adhesive layer and the color of the sealing material 13 is particularly likely to occur.

  Here, in the semiconductor device 10, the color of the cured product 12 of the adhesive layer and the color of the sealing material 13 are both black and the same color, and the color is the same. In addition, in the adhesive sheet 20 used for manufacturing the semiconductor device 10, the adhesive layer 23 is colored in black in advance, for example, by the addition of a dye, and does not change color before and after curing. Therefore, in the semiconductor device 10, although the cured product 12 of the adhesive layer is exposed from the surface of the sealing material 13, the cured product 12 of the adhesive layer and the sealing material 13 are reliably integrated. It is possible to make it look like. Therefore, the appearance defect of the semiconductor device 10 can be reliably suppressed.

  The viscosity at 80 ° C. of the adhesive layer 23 is 10000 Pa · s or less. For this reason, in the die bonding step using the adhesive sheet 20, the embeddability of the wire W1 and the first semiconductor chip S1 by the singulated adhesive layer 23p can be sufficiently enhanced. This makes it possible to suppress the occurrence of defects due to insufficient filling.

  While the peelable sheet 22 has a long shape, the plurality of laminates L are wound in a roll shape in a state where they are disposed apart from each other along the longitudinal direction of the peelable sheet 22. Therefore, the laminate L and the semiconductor wafer 26 can be sequentially bonded while the adhesive sheet 20 is fed out from the roll. Thereby, the productivity of the semiconductor device 10 can be improved.

  As mentioned above, although embodiment of this invention was described, this invention is not limited to the said embodiment, A various change is possible in the range which does not change the summary. For example, in the outer surfaces 10a to 10f of the semiconductor device 10, the cured product 12 of the adhesive layer may not be exposed from the surface of the sealing material 13. That is, the sealing material 13 may seal the wire W2 and the second semiconductor chip S2 together with the cured product 12 of the adhesive layer. Even in such a case, the cured product 12 of the adhesive layer is transparent from the surface of the sealing material 13, which may cause appearance defects of the semiconductor device 10. In the semiconductor device 10, by making the color of the cured product 12 of the adhesive layer identical to the color of the sealing material 13, the cured product 12 of the adhesive layer and the sealing material 13 are integrally shown. As a result, the appearance defect of the semiconductor device 10 can be suppressed.

  Not only when the entire color of the cured product 12 of the adhesive layer is the same as the color of the sealing material 13, for example, only the exposed portion 12 a of the cured product 12 of the adhesive layer is colored black. It may be the same as the color of the sealing material 13.

  The semiconductor device 10 may include the supporting member 11, the cured product 12 of the adhesive layer, the second semiconductor chip S2, and the sealing material 13, and may not include the first semiconductor chip S1. . In addition, the second semiconductor chip S2 may be electrically connected to the support member 11 by connection means other than the wire W2.

  The shape of the semiconductor device 10 is not limited to a substantially rectangular parallelepiped, and can be appropriately changed in accordance with the shape of the second semiconductor chip S2. Further, the shapes of the adhesive layer 23, the adhesive layer 24, and the base sheet 25 of the adhesive sheet 20 are not limited to circular, and can be appropriately changed according to the shapes of the semiconductor wafer 26 and the ring frame 27. Further, the shape of the first semiconductor chip S1 and the shape of the second semiconductor chip S2 are not limited to rectangular, and may be square or the like.

  In the adhesive sheet 20, at least one laminate L on which the adhesive layer 23, the adhesive layer 24, and the base sheet 25 are laminated may be provided on the peelable sheet 22. The adhesive sheet 20 may not necessarily be wound in a roll, and may be cut in advance for each laminate L.

  Hereinafter, the present invention will be more specifically described based on examples and comparative examples, but the present invention is not limited to the following examples.

  First, solutions 1 to 4 used for forming an adhesive layer were prepared. Solution 1 was prepared as a white solution without coloring. Solutions 2 to 4 were prepared as black solutions by coloring.

  Solution 1 was specifically prepared as follows. That is, 94.1 g of SC2050-HLG (manufactured by Admatex), 27.4 g of EXA-830 CRP (manufactured by DIC), 34.1 g of CHN (cyclohexanone) (manufactured by Sinopec), YDCN-700-10 (manufactured by Nippon Steel & Sumikin) in a plastic cup 31.2 g, 44.7 g of XLC-LL (manufactured by Mitsui Chemicals), 266.2 g of a 12.1% solution of HTR-860P-3CSP (manufactured by Nagase ChemteX), 1.4 g of 2 PZ-CN (Shikoku Kasei) Put in and stir for 12 hours. The solution thus obtained was taken as solution 1.

  Specifically, Solution 2 was prepared as follows. That is, 0.5 g of a 10% solution of FB Black (manufactured by Sanyo Dye) was added to the solution 1, and the mixture was further stirred for 5 hours. The solution thus obtained was designated as solution 2.

  Specifically, solution 3 was prepared as follows. That is, 1.0 g of a 10% solution of FB Black (manufactured by Sanyo Dye) was added to the solution 1, and the mixture was further stirred for 5 hours. The solution thus obtained was taken as solution 3.

  Specifically, Solution 4 was prepared as follows. That is, 5.0 g of a 10% solution of FB Black (manufactured by Sanyo Dye) was added to the solution 1, and the mixture was further stirred for 5 hours. The solution thus obtained was taken as solution 4.

  Next, adhesive layers of Examples 1 to 4 and Comparative Examples 1 to 4 were formed as follows using the solutions 1 to 4 prepared as described above. That is, CHN was evaporated from each of the solutions 1 to 4 to form a film, whereby an adhesive layer having a thickness of 120 μm was obtained. The film obtained from the solution 1 was referred to as comparative example 1, the film obtained from the solution 2 as example 1, the film obtained from the solution 3 as example 2, and the film obtained from the solution 4 as example 3.

  Furthermore, a film obtained by curing the film of Comparative Example 1 at 125 ° C. for 20 minutes was regarded as Comparative Example 2. A film obtained by curing the film of Comparative Example 1 at 125 ° C. for 30 minutes was taken as Comparative Example 3. A film obtained by curing the film of Example 2 at 125 ° C. for 20 minutes was taken as Example 4. A film obtained by curing the film of Example 2 at 125 ° C. for 30 minutes was taken as Comparative Example 4.

The formation conditions of the adhesive bond layer of Examples 1-4 and Comparative Examples 1-4 are shown in Table 1. In Table 1, the solution used when forming each adhesive layer, and the curing conditions (curing temperature, curing time) of each adhesive layer are shown as the formation conditions of each adhesive layer. The curing conditions are shown only for the adhesive layers of Example 4 and Comparative Examples 2 to 4 in which the curing process was performed.

  The adhesive layer of each of Examples 1 to 4 and Comparative Examples 1 to 4 was cut to a size of 320 mmφ, and the pressure-sensitive adhesive layer-attached base material sheet was attached such that the pressure-sensitive adhesive layer was in contact with the adhesive layer. Subsequently, the pressure-sensitive adhesive layer-attached base sheet was cut into a size of 370 mmφ at a position where the center of the adhesive layer substantially coincides with the circle, to obtain an adhesive sheet. Subsequently, the semiconductor wafer and the laminate including the adhesive layer, the pressure-sensitive adhesive layer, and the base sheet were attached at 70 ° C. so that the adhesive layer and the semiconductor wafer were in contact with each other. Furthermore, a second semiconductor chip with an adhesive layer of 10 mm × 10 mm was obtained by dicing.

  Next, for the first semiconductor chip of 7 mm × 5 mm fixed on the substrate with silver paste or adhesive film, the second semiconductor layer with an adhesive layer of 10 mm × 10 mm under the conditions of 120 ° C., 0.2 MPa and 5 seconds. The chips were die bonded and cured in a pressure oven. Curing using a pressure oven was performed under predetermined pressure and temperature conditions. That is, the temperature was raised from room temperature to 90 ° C. in 5 minutes at a maximum of 0.7 MPa, and held at 90 ° C. for 5 minutes. Thereafter, the temperature was raised again from 90 ° C. to 140 ° C. in 17 minutes, and held at 140 ° C. for 40 minutes.

  Next, the second semiconductor chip was sealed using an epoxy resin sealing material CEL-9750ZHF10AKLC1 manufactured by Hitachi Chemical Co., Ltd. as a black sealing material. Subsequently, the semiconductor device was singulated at a position of 0.5 mm outward from the end of the second semiconductor chip. At the time of singulation, the cured product of the adhesive layer was exposed from the sealing material on the side surface of the semiconductor device.

With respect to the semiconductor device obtained as described above, SAT (ultrasound imaging device) analysis was performed to confirm the embeddability of the first semiconductor chip. The results of SAT analysis are shown in Table 2. In Table 2, those having sufficient embeddability are shown as “A”, and those having insufficient embeddability are shown as “B”. In addition, the external appearance of the side of the semiconductor device is observed, and the cured product of the adhesive layer and the sealing material are seen integrally as “A”, and the cured product of the adhesive layer and the sealing material are seen separately. Show things as "B".

  As shown in Table 2, when the adhesive layer of Examples 1 to 4 was used, the embeddability of the chip was sufficient. Further, the cured product of the adhesive layer exposed to the side surface of the semiconductor device was black with respect to the black sealing material, and the cured product of the adhesive layer and the sealing material were integrally viewed. On the other hand, in the adhesive layer of Comparative Examples 1 and 2, although the embedding property of the chip was sufficient, the cured product of the adhesive layer exposed on the side surface of the semiconductor device is white against the black sealing material. The cured product of the adhesive layer and the encapsulant were visually recognized as separate components.

  In the adhesive layer of Comparative Example 3, the embeddability of the chip was insufficient. Moreover, with respect to a black sealing material, the hardened | cured material of the adhesive layer exposed to the side of a semiconductor device was white, and the hardened | cured material of an adhesive layer and the sealing material were visually recognized as another object. In the adhesive layer of Comparative Example 4, the cured product of the adhesive layer exposed on the side surface of the semiconductor device is black with respect to the black encapsulant, and the cured product of the adhesive layer and the encapsulant are integrated. Although visible, the chip embeddability was insufficient.

  From the above results, in the semiconductor devices of Examples 1 to 4 and Comparative Example 4, the occurrence of the appearance defect of the device can be suppressed by making the color of the cured product of the adhesive layer the same as the color of the sealing material. Could be confirmed. Moreover, in Examples 1 to 4 and Comparative Examples 1 and 2, the embedding property of the chip by the adhesive layer can be sufficiently enhanced by using the adhesive sheet having a viscosity of 10000 Pa · s or less at 80 ° C. of the adhesive layer. That was confirmed.

  DESCRIPTION OF SYMBOLS 10 ... Semiconductor device, 10a-10f ... Outer surface, 11 ... Support member, 12 ... Hardened material of adhesive layer, 13 ... Sealing material, 20 ... Adhesive sheet, 22 ... Peelable sheet, 22a ... One surface, 23, 23p: adhesive layer, 24: adhesive layer, 25: base sheet, L: laminate, S2: second semiconductor chip.

Claims (6)

A support member,
A first semiconductor chip provided on the support member;
A cured product of an adhesive layer provided on the support member so as to embed the first semiconductor chip;
A second semiconductor chip provided on the cured product of the adhesive layer;
And a sealing material for sealing the second semiconductor chip.
The semiconductor device whose color of the hardened | cured material of the said adhesive bond layer is the same as the color of the said sealing material.   The semiconductor device according to claim 1, wherein the cured product of the adhesive layer is exposed from the surface of the sealing material in a state of being alternately arranged with the sealing material.   The semiconductor device according to claim 1, wherein the lightness of the cured product of the adhesive layer is the same as the lightness of the sealing material.   The semiconductor device according to any one of claims 1 to 3, wherein the saturation of the cured product of the adhesive layer is the same as the saturation of the sealing material.   The semiconductor device according to any one of claims 1 to 4, wherein the color of the cured product of the adhesive layer is the same as or adjacent to the color of the sealing material in the color wheel.   The semiconductor device according to any one of claims 1 to 5, wherein a color of a cured product of the adhesive layer is the same as a color of the sealing material.

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