JP6536176B2 - Polishing solution for sapphire, storage solution and polishing method - Google Patents

Description

  The present invention relates to a polishing solution for sapphire used to polish sapphire, a storage solution for obtaining the polishing solution, and a polishing method using these.

  Sapphire has conventionally been mainly used for LED substrate applications, but since it is transparent, has high hardness, and is not easily scratched, in recent years front cover glass for electronic device housings represented by smartphones, etc. It is used for camera cover glass etc., and the demand is increasing year by year.

  As a method of manufacturing a sapphire substrate, first, a mass of sapphire is formed by the Bernoulli method, Czochralski method, EFG (Edge-defined Film-fed Growth Method) method or the like, and then cut into a substrate and sliced thinly to manufacture The method is mentioned. At the time of slicing, fine scratches are present on the cut surface because the thin wire or the like (for example, a multi-wire saw) to which diamond grains are attached is used for cutting.

  Since the LED substrate is produced by crystal growth of GaN on a sapphire substrate, the sapphire surface is required to be very smooth in terms of its application. In addition, even when the sapphire substrate is used as a cover glass of an electronic device casing, if the sapphire surface has scratches or the like, the designability is reduced and the appearance is not beautiful, so the sapphire surface is smooth without scratches. It is required to be there.

  Chemical Mechanical Polishing (CMP) is essential for removing and smoothing such scratches on the sapphire surface. CMP is a technique of mechanically polishing with abrasive grains and a polishing pad (abrasive cloth) contained in a polishing solution while chemically modifying the surface of a workpiece to be polished easily by a polishing solution. However, sapphire is very stable chemically and thermally and has high hardness, so that CMP is difficult, processing time is long, and production cost is high.

  In order to reduce the production cost, it is desirable to improve the polishing rate of sapphire in the polishing process and shorten the polishing time. The polishing rate can be increased by increasing the pressure at the time of polishing. However, in order to shorten the processing time, if it is attempted to polish under the condition that the pressure on the polishing apparatus is increased at the time of CMP in order to shorten the processing time, the polishing apparatus may have a problem of causing vibration. The vibration of this polishing apparatus is called "bibili", and if the polishing is continued for a long time while being chattered, there is a possibility that problems such as breakage of the apparatus may occur. For this reason, it is desirable to suppress the vibration of the polishing apparatus and improve the polishing rate by improving the polishing liquid used for polishing.

  Several polishing solutions for sapphire are known, but the types are not abundant. For example, Patent Document 1 describes that sapphire is polished with a polishing solution containing a high concentration of colloidal silica. Further, in Patent Document 2, the polishing liquid composition for sapphire contains, as necessary, a surfactant, a cleaning agent, a rust inhibitor, a surface modifier, a viscosity modifier, an antibacterial agent, a dispersant, and the like. It is stated that it may be.

JP 2008-44078 A Patent No. 5384037 gazette

  However, even if sapphire is polished using the polishing liquid described in Patent Document 1 or the polishing liquid composition described in Patent Document 2, the vibration of the polishing apparatus can not be suppressed, and The polishing rate of sapphire is also not sufficient.

  The present invention has been made in view of the above-described circumstances, and can suppress the generation of vibration of the polishing apparatus in the CMP process, and can be used to polish sapphire at a high polishing rate, a polishing solution for the same, a storage solution thereof, An object of the present invention is to provide a polishing method used.

  One aspect of the present invention is a polishing for sapphire, which comprises a lactone compound, abrasive grains containing silica, and a liquid medium, and the content of the lactone compound is 0.02% by mass or more based on the total mass of the polishing liquid. It relates to the liquid. By using such a polishing liquid, generation of vibration of the polishing apparatus in the CMP process can be suppressed, and sapphire can be polished at a high polishing rate. Furthermore, sapphire can be polished smoothly at a high polishing rate by using the above-mentioned polishing solution.

  In one aspect of the present invention, the pH of the polishing fluid is preferably 7.0 to 10.5. In this case, the generation of vibration of the polishing apparatus in the CMP process can be further suppressed, and sapphire can be polished at a higher polishing rate.

  In one aspect of the present invention, it is preferable that the silica be colloidal silica and the average particle diameter of the abrasive be 20 to 160 nm. In this case, the generation of vibration of the polishing apparatus in the CMP process can be further suppressed, and sapphire can be polished at a higher polishing rate.

  In one aspect of the present invention, the content of the abrasive grains is preferably 1 to 40% by mass based on the total mass of the polishing liquid. In this case, the generation of vibration of the polishing apparatus in the CMP process can be further suppressed, and sapphire can be polished at a higher polishing rate.

  One aspect of the present invention relates to a storage solution for obtaining the polishing solution, wherein the polishing solution can be obtained by diluting with a liquid medium. Such a storage solution can reduce the cost of storing and transporting the polishing solution.

  One aspect of the present invention relates to a polishing method comprising the step of polishing a surface to be polished containing sapphire using the above-mentioned polishing liquid. According to such a polishing method, generation of vibration of the polishing apparatus in the CMP process can be suppressed, and sapphire can be polished at a high polishing rate.

  One aspect of the present invention relates to a polishing method comprising the step of polishing a surface to be polished containing sapphire using a polishing solution obtained by diluting the above-mentioned storage solution with a liquid medium. According to such a polishing method, generation of vibration of the polishing apparatus in the CMP process can be suppressed, and sapphire can be polished at a high polishing rate. In addition, since the cost relating to storage, transport, storage, and the like of the polishing liquid can be suppressed, the overall manufacturing cost can be reduced.

  According to the present invention, it is possible to suppress the generation of vibration of the polishing apparatus in the CMP process and provide a polishing liquid for sapphire, a storage solution thereof, and a polishing method using these, which can polish sapphire at a high polishing rate. it can.

  Hereinafter, preferred embodiments of the present invention will be described. However, the present invention is not limited to the following embodiment.

<Abrasive fluid>
The polishing liquid according to the present embodiment is a polishing liquid for sapphire, and is used for polishing sapphire. The polishing liquid according to this embodiment contains a lactone compound, abrasive grains containing silica, and a liquid medium, and the content of the lactone compound is 0.02 mass% or more based on the total mass of the polishing liquid.

(Lactone compound)
The lactone compound is a compound having at least one lactone structure in the molecule. As a lactone compound, a three-membered ring lactone compound (a compound having a three-membered ring lactone structure), a four-membered ring lactone compound (a compound having a four-membered ring lactone structure), a five-membered ring lactone compound (a five-membered ring lactone structure Compounds), 6-membered ring lactone compounds (compounds having a 6-membered ring lactone structure) and the like. As a 3-membered ring lactone compound, (alpha) -aceto lactone etc. are mentioned. As a 4-membered ring lactone compound, (beta) -propiolactone etc. are mentioned. Examples of the five-membered ring lactone compound include γ-butyrolactone and α-acetyl-γ-butyrolactone. Examples of 6-membered ring lactone compounds include δ-valerolactone. Among these, γ-butyrolactone is preferable from the viewpoint of further suppressing the generation of vibration of the polishing apparatus in the CMP process and the viewpoint of polishing sapphire smoothly at a higher polishing rate. The lactone compounds can be used singly or in combination of two or more.

  The content of the lactone compound in the polishing liquid is 0.02% by mass or more based on the total mass of the polishing liquid. When the content of the lactone compound is less than 0.02% by mass, it becomes difficult to obtain the effect of suppressing the vibration of the polishing apparatus. The lower limit of the content of the lactone compound is preferably 0.05% by mass or more, and more preferably 0.1% by mass or more from the viewpoint of further suppressing the occurrence of vibration of the polishing apparatus. The upper limit of the content of the lactone compound is preferably less than 2.0% by mass, more preferably less than 1.5% by mass, from the viewpoint of suppressing the occurrence of gelation in a high temperature atmosphere exceeding 40 ° C. Less than% is more preferred.

  Although the clear knowledge about the reason the effect which suppresses generation | occurrence | production of the vibration of the polishing apparatus in a CMP process is acquired is not obtained because polishing liquid contains a lactone compound 0.02% or more, the present inventors et al. Is estimated as follows.

  The generation of vibration of the polishing apparatus in the CMP of sapphire increases the friction generated at the interface between the surface to be polished including sapphire and the polishing pad, and this stress is applied to the surface to be polished including sapphire (for example, the head of the polishing apparatus It is considered that this problem occurs because the surface to be polished of the mounted substrate and the surface of the polishing pad (for example, the polishing pad mounted and rotated on the surface plate of the polishing apparatus) can not escape. For this reason, as the rotation speed of the surface plate of the polishing apparatus is lower and the pressure of the head is higher, vibration is more likely to occur.

  Here, the abrasive grains in the polishing solution are considered to play a role of alleviating the friction at the interface between the polishing surface including sapphire and the polishing pad. The sufficient amount of lactone compound is considered to suitably compensate for the ability to reduce the friction at the interface between the polishing surface including sapphire and the polishing pad, such as abrasive grains in the polishing liquid. With respect to this mechanism, it is possible to intervene between the abrasive grains so as to gently bond the abrasive grains, and act as a lubricant that reduces the friction between the surface to be polished and the polishing pad in the presence of the abrasive grains, etc. And although it is estimated that the combination of these demonstrates the effect which reduces the vibration of a grinding device, the further investigation is needed about the true / false.

(Abrasive)
Abrasive grains contain silica. Conventionally, silica, alumina and ceria have been well known as constituents of abrasive grains, and among them, by using silica, to polish the surface to be polished containing sapphire smoothly at an excellent polishing rate Can. As the abrasive grains, two or more kinds of abrasive grains different in average particle diameter, shape, constituent material and the like can be mixed and used.

  Examples of the silica include colloidal silica and fumed silica. Among the silicas, colloidal silica is preferable from the viewpoint of smooth polishing of sapphire at a further excellent polishing rate. Silica can be used singly or in combination of two or more.

  The content of the silica in the abrasive grains is preferably 50% by mass or more, more preferably 70% by mass or more, and still more preferably 90% by mass or more, based on the total mass of the abrasive grains. The abrasive may be, for example, silica particles (particles made of silica).

  From the viewpoint of further improving the polishing speed of sapphire, the viewpoint that the smoothness of the surface to be polished including sapphire after polishing is further excellent, and the viewpoint of further suppressing the generation of the vibration of the polishing apparatus, 20-160 nm is preferable, 30-130 nm is more preferable, and 40-80 nm is more preferable.

  Here, the average particle diameter means the value of D50 (median diameter of volume distribution, cumulative median value) measured by a dynamic light scattering type particle size distribution analyzer. Specifically, for example, a measurement sample is prepared by diluting an appropriate amount of polishing liquid with water as necessary so as to fall within the required range of scattered light intensity, and this measurement sample is a dynamic light scattering method. It is a value obtained as D50 by charging the particle size distribution meter. As a particle size distribution analyzer of a dynamic light scattering system having such a function, for example, a light diffraction scattering particle size distribution analyzer (trade name: COULTER N5 type) manufactured by COULTER Electronics can be mentioned. The value of the average particle size obtained by this dynamic light scattering type particle size distribution analyzer is the average primary particle size measured by observing the surface with a scanning electron microscope after appropriately diluting the polishing liquid and drying it on the sample stage. The value is larger than that of the average primary particle size, which is almost twice as large as the average primary particle size.

  The content of the abrasive grains in the polishing liquid is preferably 1% by mass or more on the basis of the total mass of the polishing liquid, from the viewpoint of further improving the polishing rate of sapphire and from the viewpoint of suppressing generation of vibration of the polishing apparatus. 2 mass% or more is more preferable, and 4 mass% or more is still more preferable. The content of the abrasive grains is preferably 40% by mass or less, more preferably less than 40% by mass, based on the total mass of the polishing liquid, from the viewpoint that storage stability is improved due to the abrasive grains being less likely to aggregate in the polishing liquid. Preferably, 30% by mass or less is more preferable, and 20% by mass or less is particularly preferable. The content of the abrasive grains is a factor directly affecting the cost of the polishing liquid, so the cost can be reduced as the content of the abrasive grains is smaller.

  The vibration of the polishing apparatus in the CMP process tends to occur as the average particle diameter of the abrasive grains decreases and as the content of the abrasive grains in the polishing liquid decreases. Although clear knowledge about this reason is not obtained, the present inventors estimate as follows. That is, as the average particle diameter of the abrasive grains is smaller and the content of the abrasive grains in the polishing liquid is smaller, the ability to reduce the friction at the interface between the surface to be polished and the polishing pad is insufficient. It is considered that the vibration of the device tends to occur easily.

(Additives)
The polishing liquid according to the present embodiment inhibits the effect of the present invention (while suppressing the generation of vibration of the polishing apparatus in the CMP step, and polishing the surface to be polished including sapphire at a high polishing rate) as necessary. To the extent that it does not occur, auxiliary additives such as pH adjusters, surfactants, detergents, rust inhibitors, surface modifiers, viscosity modifiers, antibacterial agents, dispersants and the like may be contained.

[PH adjuster]
As pH adjusters, inorganic acids such as sulfuric acid, hydrochloric acid, nitric acid and phosphoric acid; organic acids such as acetic acid, oxalic acid, malic acid, malonic acid and picolinic acid; ammonia, sodium hydroxide, potassium hydroxide, TMAH (water And alkali components such as tetramethylammonium oxide) and imidazole. The pH of the polishing liquid can be adjusted by these pH adjusters. In addition, the polishing solution may contain a buffer solution in order to stabilize the pH. Examples of such buffer include acetate buffer, phthalate buffer and the like.

(Liquid medium)
The polishing liquid according to the present embodiment contains a liquid medium. The liquid medium acts as a dispersion medium for the abrasive grains. Examples of the liquid medium include water and the like. As water, more specifically, deionized water, ion-exchanged water, ultrapure water and the like are preferable.

(PH)
The pH of the polishing liquid according to the present embodiment is preferably 7.0 to 10.5, from the viewpoint that the polishing rate of sapphire is easily improved and the storage stability of the polishing liquid is excellent, and 7.3 to 10. 2 is more preferable, 7.5 to 10.0 is further preferable, and 8.0 to 9.8 is particularly preferable. The pH is defined as the pH at a liquid temperature of 25 ° C.

  The pH of the polishing liquid can be measured with a pH meter (for example, manufactured by HORIBA, Ltd., model number: pH METE F-50). As a measured value of pH, standard buffer (phthalate pH buffer pH: 4.01 (25 ° C), neutral phosphate pH buffer pH: 6.86 (25 ° C), borate pH buffer After calibrating at 3 points using liquid pH: 9.18 (25 ° C), put the electrode in the polishing liquid, and use the value after stabilization for 2 minutes or more.

<Reserved liquid>
The polishing liquid according to the present embodiment can be stored as a storage liquid to be used after being diluted with a liquid medium such as water at the time of use. That is, the storage solution according to the present embodiment is a storage solution for obtaining the above-mentioned polishing solution, and the polishing solution can be obtained by diluting with a liquid medium (for example, diluting by 2 times or more based on mass). By storing the polishing liquid as a storage liquid, it is possible to suppress the cost of storage, transportation, storage, and the like. The storage liquid may be diluted with a liquid medium immediately before polishing to form a polishing liquid, or the storage liquid and the liquid medium may be supplied onto a polishing platen to prepare the polishing liquid on the polishing platen. Good.

  The higher the dilution ratio of the storage solution is, the higher the effect of suppressing costs relating to storage, transportation, storage and the like. Therefore, the lower limit of the dilution ratio of the storage solution is preferably 2 times or more, more preferably 3 times or more on a mass basis. The upper limit of the dilution ratio of the storage solution is not particularly limited, but is preferably 10 times or less, more preferably 7 times or less, and still more preferably 5 times or less on a mass basis. When the dilution ratio is below these upper limit values, the content of the abrasive grains contained in the storage solution tends to be prevented from becoming too high, and the stability of the storage solution during storage tends to be easily maintained. When the dilution ratio is d, the content of each of the abrasive grains and the lactone compound in the storage solution is d times the content of each of the abrasive grains and the lactone compound in the polishing liquid.

<Polishing method>
A polishing method (a method of polishing sapphire) according to the present embodiment includes a polishing step of polishing a surface to be polished including sapphire using the above-described polishing liquid. The polishing step may be a step including the step of polishing a surface to be polished including sapphire using a polishing solution obtained by diluting the above-described storage solution with a liquid medium.

  In the polishing method according to the present embodiment, a known polishing apparatus can be widely used. For example, in the case of polishing a substrate having a surface to be polished (sapphire substrate) having sapphire, the polishing apparatus that can be used is connected to a holder for holding the sapphire substrate on the head and a motor etc. In addition, a general polishing apparatus having a platen attached with a polishing pad can be used.

Although it does not specifically limit as a polishing pad, A common nonwoven fabric, a foaming polyurethane, a porous fluororesin etc. are mentioned. There is no limitation on the polishing conditions of the substrate, but from the viewpoint of easily preventing the substrate from coming out, it is preferable that the rotation number of the platen be 200 min ⁻¹ or less. The polishing load is preferably 700 gf / cm ² or less, from the viewpoint of easily suppressing the occurrence of flaws on the surface of the substrate after polishing.

  In the polishing method according to the present embodiment, for example, the polishing liquid is supplied between the surface to be polished and the polishing pad by a pump or the like in a state where the sapphire substrate is pressed to the polishing pad attached to the surface plate. Relatively move the base and the platen. By these operations, the surface to be polished including sapphire is polished. The method for supplying the polishing liquid to the polishing apparatus is not particularly limited as long as the polishing liquid can be continuously supplied to the polishing pad during polishing. Although there is no limitation on the supply amount of the polishing liquid, it is preferable that the surface of the polishing pad is always covered with the polishing liquid. Supply the storage solution and a liquid medium such as water between the surface to be polished and the polishing pad, and perform polishing while diluting the storage solution on the polishing platen (for example, by 2 times or more based on mass) It is also good. In addition, the supplied polishing liquid may be recovered, supplied again to the polishing pad, and circulated.

  After the completion of polishing, the substrate is preferably washed with water, ethanol, isopropyl alcohol, other cleaning agents and the like, and then dried using a spin dryer or the like to remove water droplets adhering to the substrate and then dried.

  Hereinafter, the present invention will be described in more detail by way of examples, but the present invention is not limited to these examples as long as the technical idea of the present invention is not deviated.

<Average particle diameter of abrasive grains>
The average particle diameter of the abrasive grains (Silica A and Silica B) used in Examples and Comparative Examples was measured with a light diffraction / scattering particle size distribution analyzer (trade name: COULTER N5 type) manufactured by COULTER Electronics. The average particle size of silica A was 68 nm, and the average particle size of silica B was 44 nm. In addition, Cataloid SI-45P ("Cataloid" is a registered trademark, made by JGC Catalysts Chemical Industries, Ltd., average primary particle diameter 45 nm, content 40% by mass of colloidal silica) as a dispersion liquid composed of silica A and water. And Cataloid SI-50 (manufactured by JGC Catalysts and Chemicals, Inc., average primary particle size 25 nm, content of colloidal silica 48 mass%) was used as a dispersion liquid composed of silica B and water.

Example 1
(Reserved liquid 1)
96 parts by weight of Cataloid SI-45P as a dispersion composed of silica A and water, 1.0 parts by weight of γ-butyrolactone, 2.62 parts by weight of deionized water, 0.32 of 1,2,4-triazole A stock solution 1 was prepared by dissolving and mixing parts by mass and 0.06 parts by mass of malic acid.

(Abrasive fluid 1)
By mixing 1 part by mass of the storage solution 1 and 3 parts by mass of deionized water, the storage solution 1 was diluted fourfold to prepare a polishing solution 1. The content of silica A in polishing liquid 1 was 9.600% by mass, and the content of γ-butyrolactone was 0.250% by mass. Here, the "content" is the content based on the total mass of the polishing liquid (the same applies to the following).

Example 2
(Stock solution 2)
96 parts by weight of Cataloid SI-45P as a dispersion composed of silica A and water, 0.1 parts by weight of γ-butyrolactone, 3.50 parts by weight of deionized water, 0.32, 1, 2, 4- triazole A stock solution 2 was prepared by dissolving and mixing parts by mass and 0.08 parts by mass of malic acid.

(Abrasive fluid 2)
The stock solution 2 was diluted 4 times by mixing 1 part by weight of the stock solution 2 with 3 parts by weight of deionized water to prepare a polishing solution 2. The content of silica A in polishing solution 2 was 9.600% by mass, and the content of γ-butyrolactone was 0.025% by mass.

Example 3
(Reserved liquid 3)
A stock solution 3 similar to stock solution 1 was prepared.

(Abrasive fluid 3)
The stock solution 3 was diluted 6 times by mixing 1 part by weight of the stock solution 3 and 5 parts by weight of deionized water to prepare a polishing liquid 3. The content of silica A in the polishing liquid 3 was 6.400% by mass, and the content of γ-butyrolactone was 0.167% by mass.

Example 4
(Stock liquid 4)
80 parts by weight of Cataloid SI-50 as a dispersion composed of silica B and water, 1.0 parts by weight of γ-butyrolactone, 18.62 parts by weight of deionized water, 0.32, 1, 2, 4- triazole A stock solution 4 was prepared by dissolving and mixing parts by mass and 0.06 parts by mass of malic acid.

(Abrasive fluid 4)
The stock solution 4 was diluted 4-fold by mixing 1 part by weight of the stock solution 4 with 3 parts by weight of deionized water to prepare a polishing solution 4. The content of silica B in the polishing liquid 4 was 9.600% by mass, and the content of γ-butyrolactone was 0.250% by mass.

Comparative Example 1
(Stock liquid X1)
96 parts by weight of Cataloid SI-45P as a dispersion composed of silica A and water, 3.60 parts by weight of deionized water, 0.32 parts by weight of 1,2,4-triazole, 0.08 parts of malic acid The resulting solution was dissolved and mixed to prepare a stock solution X1.

(Polishing liquid X1)
The stock solution X1 was diluted 4-fold by mixing 1 part by weight of the stock solution X1 and 3 parts by weight of deionized water to prepare a polishing solution X1. The content of silica A in polishing solution X1 was 9.600% by mass.

Comparative Example 2
(Stock solution X2)
96 parts by weight of Cataloid SI-45P as a dispersion composed of silica A and water, 0.072 parts by weight of γ-butyrolactone, 3.528 parts by weight of deionized water, 0.32 parts of 1,2,4-triazole A stock solution X2 was prepared by dissolving and mixing parts by weight and 0.08 parts by weight of malic acid.

(Polishing liquid X2)
The stock solution X2 was diluted 4-fold by mixing 1 part by weight of the stock solution X2 with 3 parts by weight of deionized water to prepare a polishing solution X2. The content of silica A in the polishing liquid X2 was 9.600% by mass, and the content of γ-butyrolactone was 0.018% by mass.

Comparative Example 3
(Stock solution X3)
A dispersion composed of silica A and water 96 parts by weight of Cataloid SI-45P, 1.0 parts by weight of diethylene glycol, 2.60 parts by weight of deionized water, 0.32 parts by weight of 1,2,4-triazole And 0.08 parts by mass of malic acid were dissolved and mixed to prepare a storage solution X3.

(Polishing liquid X3)
The stock solution X3 was diluted 4-fold by mixing 1 part by weight of the stock solution X3 with 3 parts by weight of deionized water to prepare a polishing solution X3. The content of silica A in the polishing liquid X3 was 9.600% by mass, and the content of diethylene glycol was 0.250% by mass.

Comparative Example 4
(Stock solution X4)
96 parts by weight of Cataloid SI-45P as a dispersion composed of silica A and water, 1.0 parts by weight of 1,3-butanediol, 2.60 parts by weight of deionized water, 1,2,4-triazole 0.32 parts by mass and 0.08 parts by mass of malic acid were dissolved and mixed to prepare a storage solution X4.

(Abrasive fluid X4)
The stock solution X4 was diluted 4-fold by mixing 1 part by weight of the stock solution X4 with 3 parts by weight of deionized water to prepare a polishing solution X4. The content of silica A in the polishing liquid X4 was 9.600% by mass, and the content of 1,3-butanediol was 0.250% by mass.

Comparative Example 5
(Stock solution X5)
96 parts by weight of Cataloid SI-45P as a dispersion composed of silica A and water, 0.016 parts by weight of polyoxyethylene sorbitan monolaurate, 3.584 parts by weight of deionized water, 1,2,4-4 0.32 parts by mass of triazole and 0.08 parts by mass of malic acid were dissolved and mixed to prepare a storage solution X5.

(Polishing liquid X5)
The stock solution X5 was diluted 4-fold by mixing 1 part by weight of the stock solution X5 with 3 parts by weight of deionized water to prepare a polishing solution X5. The content of silica A in the polishing slurry X5 was 9.600% by mass, and the content of polyoxyethylene sorbitan monolaurate was 0.004% by mass.

Comparative Example 6
(Stock solution X6)
96 parts by weight of Cataloid SI-45P as a dispersion composed of silica A and water, and 0.4 parts by weight of JULYMER AC-10LP ("Julimer" is a registered trademark, manufactured by Nippon Junyaku Co., Ltd.) as polyacrylic acid A stock solution X6 was prepared by dissolving and mixing 3.20 parts by mass of deionized water, 0.32 parts by mass of 1,2,4-triazole, and 0.08 parts by mass of malic acid.

(Polishing liquid X6)
The stock solution X6 was diluted 4-fold by mixing 1 part by weight of the stock solution X6 with 3 parts by weight of deionized water to prepare a polishing solution X6. The content of silica A in polishing solution X6 was 9.600% by mass, and the content of polyacrylic acid was 0.100% by mass.

Comparative Example 7
(Stock solution X7)
96 parts by weight of Cataloid SI-45P as a dispersion liquid composed of silica A and water, and 0.4 parts by weight of PGL X (“PGL X” is a trade name, made by Daicel Co., Ltd., 20-mer) as polyglycerin, A stock solution X7 was prepared by dissolving and mixing 3.20 parts by mass of deionized water, 0.32 parts by mass of 1,2,4-triazole, and 0.08 parts by mass of malic acid.

(Polishing liquid X7)
The stock solution X7 was diluted 4-fold by mixing 1 part by weight of the stock solution X7 and 3 parts by weight of deionized water to prepare a polishing solution X7. The content of silica A in polishing solution X7 was 9.600% by mass, and the content of polyglycerin was 0.100% by mass.

Comparative Example 8
(Stock solution X8)
A stock solution X8 similar to stock solution X1 was prepared.

(Polishing liquid X 8)
The stock solution X8 was diluted 6 times by mixing 1 part by weight of the stock solution X8 with 5 parts by weight of deionized water to prepare a polishing solution X8. The content of silica A in polishing solution X8 was 6.400% by mass.

Comparative Example 9
(Stock solution X 9)
80 parts by weight of Cataloid SI-50 as a dispersion composed of silica B and water, 19.60 parts by weight of deionized water, 0.32 parts by weight of 1,2,4-triazole, 0.08 parts of malic acid The resulting solution was dissolved and mixed to prepare a stock solution X9.

(Polishing liquid X 9)
The stock solution X9 was diluted 4-fold by mixing 1 part by weight of the stock solution X9 with 3 parts by weight of deionized water to prepare a polishing solution X9. The content of silica B in polishing liquid X9 was 9.600% by mass.

<PH measurement and pH adjustment of polishing liquid>
The pH at 25 ° C. of the polishing liquids of Examples and Comparative Examples was measured using a pH meter “pH METE F-50” manufactured by Horiba, Ltd. If the pH of the polishing solution is 9.2 to 9.3, use it as the polishing solution as it is, and if it is higher than 9.3, add a slight amount of 20% by mass malic acid aqueous solution as a pH adjusting solution The pH was adjusted to 9.2-9.3. The pH did not fall below 9.2 in the examples and comparative examples. The 20% by mass malic acid aqueous solution was prepared by dissolving 20 parts by mass of malic acid in 80 parts by mass of deionized water at room temperature. The amount of malic acid in the polishing solution to which the pH adjusting solution was added was equal to the amount of malic acid in the polishing solution before adding the pH adjusting solution.

<Sapphire base used for CMP evaluation>
In the CMP evaluation, a plane-oriented C-plane sapphire wafer having a diameter of 50.8 mm (2 inches) and a thickness of 0.43 mm was used as a sapphire substrate. The average surface roughness (Ra) before polishing was 0.2 nm. The average surface roughness (Ra) was measured using a scanning probe microscope (“SPI3800N / SPA500” manufactured by Seiko Instruments Inc.) in a measurement area of 1 micron.

<Evaluation of vibration of polishing apparatus in CMP process>
While dropping the polishing liquids 1 to 4 and the polishing liquids X1 to X9 obtained above onto the pad attached to the surface plate, the CMP processing is performed under the polishing conditions (polishing conditions 1 and 2) shown below, and polishing is performed. The device was evaluated for vibration. The polishing conditions other than the rotation speed of the polishing platen under the polishing condition 2 were the same as the polishing condition 1. The case where vibration did not occur was evaluated as "o", and the case where vibration occurred was evaluated as "x". The evaluation results are shown in Tables 1 and 2. Vibration evaluation evaluated that the case where it is "(circle)" in the grinding | polishing conditions 1 was favorable.

(Polishing condition 1)
Polishing device: RDP-500, manufactured by Fujikoshi Machine Industry Co.
Polishing pad: manufactured by Rohm and Haas, IC 1000 XY-Groove
Polishing pressure: 600 gf / cm ²
Flow rate of polishing liquid: 500 ml / min (1000 ml of polishing liquid was circulated)
Polishing time: 1 minute Sapphire base: 5 pieces Rotation speed of polishing plate: 40 min ^-1
(Polishing condition 2)
Rotation speed of polishing table: 30 min ^-1

<Evaluation of sapphire polishing rate by CMP>
While dropping the polishing liquids 1 to 4 and the polishing liquids X1 to X9 obtained above onto the pad attached to the surface plate, the CMP treatment is performed under the polishing condition 3 shown below, and the polishing rate and the average surface roughness (Ra The evaluation of. The evaluation results are shown in Tables 1 and 2.

(Polishing condition 3)
Polishing device: Nanoactor Co., Ltd., FACT-200
Polishing pad: manufactured by Rohm and Haas, IC 1000 K-Groove
Polishing pressure: 300 gf / cm ²
Flow rate of polishing liquid: 100 ml / min (125 ml of polishing liquid was circulated.)
Polishing time: 30 minutes Sapphire base: 5 pieces Rotation speed of polishing plate: 90 min ^-1

(Polishing rate)
The polishing rate is obtained by measuring the mass of the substrate before and after the CMP treatment to determine the mass of the polished sapphire, and from that, using the area of the surface to be polished of the substrate and the density of sapphire of 3.97 g / cm ³ It was converted to thickness and calculated from the relationship between the reduced film thickness and the polishing time. The polishing rate was evaluated as 1.0 μm / h or more as good.

(Average surface roughness (Ra))
The average surface roughness (Ra) was measured in the same manner as the method described in <Sapphire base used for CMP evaluation>. Average surface roughness (Ra) evaluated that less than 0.3 nm was good.

  As apparent from the results of the examples, when the polishing solution contains 0.02 mass% or more of a lactone compound, generation of vibration of the polishing apparatus is suppressed in the CMP step, and the polishing speed of the surface to be polished including sapphire is high. Could be polished smoothly.

  As apparent from the results of Comparative Examples 1 and 2, when the content of the lactone compound is less than 0.02% by mass, generation of vibration of the polishing apparatus could not be suppressed in the CMP step. As apparent from the results of Comparative Examples 3 and 4, even when an organic solvent other than the lactone compound was used, the generation of vibration of the polishing apparatus could not be suppressed in the CMP step. As apparent from the results of Comparative Examples 5 to 7, even when a surfactant was used in place of the lactone compound, the occurrence of vibration of the polishing apparatus could not be suppressed in the CMP step.

  As apparent from the results of Example 3 and Comparative Example 8, even when the content of the abrasive grains is 6.400% by mass, which is smaller than 9.600% by mass, the amount of the lactone compound is 0.2%. By containing 02% by mass or more, generation of vibration of the polishing apparatus in the CMP step is suppressed, and the surface to be polished including sapphire can be polished smoothly at a high polishing rate.

  As apparent from the results of Example 4 and Comparative Example 9, even when the average particle diameter of the abrasive grains is 44 nm, which is smaller than 68 nm, the polishing liquid contains 0.02 mass% or more of the lactone compound. The generation of vibration of the polishing apparatus was suppressed in the CMP process, and the surface to be polished including sapphire was able to be polished smoothly at a high polishing rate.

  The polishing liquid for sapphire (CMP polishing liquid), storage liquid, and polishing method using these according to the present invention are suitable for CMP of a surface to be polished containing sapphire, and display of electronic devices such as LED substrates, smart phones, etc. It is suitable for CMP of a sapphire base (a base having a polished surface including sapphire) used for a part cover.

Claims (7)

A lactone compound, an abrasive containing silica, and a liquid medium,
Ri Der content above 0.02 wt% based on the total mass of the polishing liquid of the lactone compound,
The polishing liquid for sapphire , wherein the lactone compound is at least one selected from the group consisting of α-acetolactone, β-propiolactone, γ-butyrolactone, α-acetyl-γ-butyrolactone and δ-valerolactone .   The polishing liquid according to claim 1, wherein the pH is 7.0 to 10.5. The silica is colloidal silica,
The polishing liquid according to claim 1, wherein an average particle diameter of the abrasive grains is 20 to 160 nm.   The polishing liquid according to any one of claims 1 to 3, wherein the content of the abrasive grains is 1 to 40% by mass based on the total mass of the polishing liquid. A storage solution for obtaining a polishing solution according to any one of claims 1 to 4,
A stock solution, wherein the polishing liquid is obtained by diluting with a liquid medium.   A polishing method comprising the step of polishing a surface to be polished containing sapphire using the polishing liquid according to any one of claims 1 to 4.   A polishing method comprising the step of polishing a surface to be polished containing sapphire using a polishing solution obtained by diluting the storage solution according to claim 5 with a liquid medium.