JP6529000B2 - イオン源、イオン源の運転方法 - Google Patents
イオン源、イオン源の運転方法 Download PDFInfo
- Publication number
- JP6529000B2 JP6529000B2 JP2017185545A JP2017185545A JP6529000B2 JP 6529000 B2 JP6529000 B2 JP 6529000B2 JP 2017185545 A JP2017185545 A JP 2017185545A JP 2017185545 A JP2017185545 A JP 2017185545A JP 6529000 B2 JP6529000 B2 JP 6529000B2
- Authority
- JP
- Japan
- Prior art keywords
- filament
- resistance value
- current
- ion source
- value
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000011017 operating method Methods 0.000 title claims 2
- 238000000034 method Methods 0.000 claims description 22
- 238000012935 Averaging Methods 0.000 claims description 6
- 238000012545 processing Methods 0.000 description 16
- 230000008569 process Effects 0.000 description 12
- 230000008859 change Effects 0.000 description 7
- 238000010884 ion-beam technique Methods 0.000 description 7
- 238000004364 calculation method Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000013459 approach Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000003503 early effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000012886 linear function Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012887 quadratic function Methods 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Electron Sources, Ion Sources (AREA)
- Combustion & Propulsion (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017185545A JP6529000B2 (ja) | 2017-09-27 | 2017-09-27 | イオン源、イオン源の運転方法 |
KR1020180075494A KR102276811B1 (ko) | 2017-09-27 | 2018-06-29 | 이온원, 이온원의 운전 방법 |
CN201810725722.1A CN109559963B (zh) | 2017-09-27 | 2018-07-04 | 离子源及离子源的运转方法 |
TW107123112A TWI725323B (zh) | 2017-09-27 | 2018-07-04 | 離子源、離子源之運轉方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017185545A JP6529000B2 (ja) | 2017-09-27 | 2017-09-27 | イオン源、イオン源の運転方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019061858A JP2019061858A (ja) | 2019-04-18 |
JP6529000B2 true JP6529000B2 (ja) | 2019-06-12 |
Family
ID=65864548
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017185545A Active JP6529000B2 (ja) | 2017-09-27 | 2017-09-27 | イオン源、イオン源の運転方法 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP6529000B2 (ko) |
KR (1) | KR102276811B1 (ko) |
CN (1) | CN109559963B (ko) |
TW (1) | TWI725323B (ko) |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08227677A (ja) * | 1995-02-21 | 1996-09-03 | Nissin Electric Co Ltd | イオン源のフィラメント電流の制御方法 |
US6555831B1 (en) * | 1999-04-30 | 2003-04-29 | Nissin Electric Co., Ltd. | Ion implanting apparatus |
JP3736196B2 (ja) * | 1999-04-30 | 2006-01-18 | 日新イオン機器株式会社 | イオン注入装置 |
JP2001165989A (ja) * | 1999-12-10 | 2001-06-22 | Fuji Electronics Industry Co Ltd | 真空管の寿命予測装置及び高周波加熱装置 |
JP2004165034A (ja) * | 2002-11-14 | 2004-06-10 | Nissin Electric Co Ltd | イオン源のフィラメント寿命予測方法およびイオン源装置 |
US8110814B2 (en) * | 2003-10-16 | 2012-02-07 | Alis Corporation | Ion sources, systems and methods |
JP2007073395A (ja) * | 2005-09-08 | 2007-03-22 | Tokyo Electron Ltd | マグネトロンの制御方法、マグネトロンの寿命判定方法、マイクロ波発生装置、マグネトロンの寿命判定装置、処理装置及び記憶媒体 |
TWI494975B (zh) * | 2008-02-11 | 2015-08-01 | Advanced Tech Materials | 在半導體處理系統中離子源之清洗 |
JP2009266779A (ja) | 2008-04-30 | 2009-11-12 | Sharp Corp | イオンドーピング装置 |
US7843138B2 (en) * | 2008-06-11 | 2010-11-30 | Kaufman & Robinson, Inc. | Power supply for a hot-filament cathode |
CN102396048B (zh) * | 2009-02-11 | 2014-08-27 | 先进科技材料公司 | 半导体制造系统中的离子源清洁方法 |
JP6350234B2 (ja) * | 2014-11-18 | 2018-07-04 | 日新イオン機器株式会社 | イオンビーム照射装置及びこれに用いられるプログラム |
-
2017
- 2017-09-27 JP JP2017185545A patent/JP6529000B2/ja active Active
-
2018
- 2018-06-29 KR KR1020180075494A patent/KR102276811B1/ko active IP Right Grant
- 2018-07-04 CN CN201810725722.1A patent/CN109559963B/zh active Active
- 2018-07-04 TW TW107123112A patent/TWI725323B/zh active
Also Published As
Publication number | Publication date |
---|---|
CN109559963B (zh) | 2022-04-29 |
CN109559963A (zh) | 2019-04-02 |
JP2019061858A (ja) | 2019-04-18 |
KR102276811B1 (ko) | 2021-07-14 |
KR20190036452A (ko) | 2019-04-04 |
TWI725323B (zh) | 2021-04-21 |
TW201916089A (zh) | 2019-04-16 |
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