JP6525378B2 - オーバーコートされたフォトレジストと共に使用するためのコーティング組成物 - Google Patents
オーバーコートされたフォトレジストと共に使用するためのコーティング組成物 Download PDFInfo
- Publication number
- JP6525378B2 JP6525378B2 JP2016209997A JP2016209997A JP6525378B2 JP 6525378 B2 JP6525378 B2 JP 6525378B2 JP 2016209997 A JP2016209997 A JP 2016209997A JP 2016209997 A JP2016209997 A JP 2016209997A JP 6525378 B2 JP6525378 B2 JP 6525378B2
- Authority
- JP
- Japan
- Prior art keywords
- resin
- optionally substituted
- glycoluril
- groups
- group
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 0 C*(CC(CCC1)(C2C(CC3(C*(C4)S)N5C)(C6)C3C46N3C)N(C)C5=O)*C12N(C)C3=O Chemical compound C*(CC(CCC1)(C2C(CC3(C*(C4)S)N5C)(C6)C3C46N3C)N(C)C5=O)*C12N(C)C3=O 0.000 description 3
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/0622—Polycondensates containing six-membered rings, not condensed with other rings, with nitrogen atoms as the only ring hetero atoms
- C08G73/0638—Polycondensates containing six-membered rings, not condensed with other rings, with nitrogen atoms as the only ring hetero atoms with at least three nitrogen atoms in the ring
- C08G73/0644—Poly(1,3,5)triazines
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G63/00—Macromolecular compounds obtained by reactions forming a carboxylic ester link in the main chain of the macromolecule
- C08G63/68—Polyesters containing atoms other than carbon, hydrogen and oxygen
- C08G63/685—Polyesters containing atoms other than carbon, hydrogen and oxygen containing nitrogen
- C08G63/6854—Polyesters containing atoms other than carbon, hydrogen and oxygen containing nitrogen derived from polycarboxylic acids and polyhydroxy compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J3/00—Processes of treating or compounding macromolecular substances
- C08J3/24—Crosslinking, e.g. vulcanising, of macromolecules
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D167/00—Coating compositions based on polyesters obtained by reactions forming a carboxylic ester link in the main chain; Coating compositions based on derivatives of such polymers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D179/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen, with or without oxygen, or carbon only, not provided for in groups C09D161/00 - C09D177/00
- C09D179/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
- C09D5/006—Anti-reflective coatings
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Wood Science & Technology (AREA)
- Materials Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Structural Engineering (AREA)
- Architecture (AREA)
- Polymers & Plastics (AREA)
- Medicinal Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Materials For Photolithography (AREA)
- Paints Or Removers (AREA)
- Processes Of Treating Macromolecular Substances (AREA)
- Polyethers (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Polyesters Or Polycarbonates (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201562249197P | 2015-10-31 | 2015-10-31 | |
| US62/249,197 | 2015-10-31 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019019040A Division JP6751454B2 (ja) | 2015-10-31 | 2019-02-05 | オーバーコートされたフォトレジストと共に使用するためのコーティング組成物 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2017097338A JP2017097338A (ja) | 2017-06-01 |
| JP6525378B2 true JP6525378B2 (ja) | 2019-06-05 |
Family
ID=58637100
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016209997A Active JP6525378B2 (ja) | 2015-10-31 | 2016-10-26 | オーバーコートされたフォトレジストと共に使用するためのコーティング組成物 |
| JP2019019040A Active JP6751454B2 (ja) | 2015-10-31 | 2019-02-05 | オーバーコートされたフォトレジストと共に使用するためのコーティング組成物 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019019040A Active JP6751454B2 (ja) | 2015-10-31 | 2019-02-05 | オーバーコートされたフォトレジストと共に使用するためのコーティング組成物 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US11822248B2 (enExample) |
| JP (2) | JP6525378B2 (enExample) |
| KR (1) | KR102003215B1 (enExample) |
| CN (1) | CN106647170B (enExample) |
| TW (1) | TWI646397B (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI592760B (zh) * | 2014-12-30 | 2017-07-21 | 羅門哈斯電子材料韓國有限公司 | 與經外塗佈之光致抗蝕劑一起使用之塗層組合物 |
| US11500291B2 (en) * | 2017-10-31 | 2022-11-15 | Rohm And Haas Electronic Materials Korea Ltd. | Underlying coating compositions for use with photoresists |
| KR102337564B1 (ko) * | 2018-09-28 | 2021-12-13 | 삼성에스디아이 주식회사 | 감광성 수지 조성물, 이를 이용한 감광성 수지막 및 전자 소자 |
| JP7238199B2 (ja) * | 2019-07-04 | 2023-03-13 | キヤノン株式会社 | テレコンバータレンズ、レンズ装置、および、撮像装置 |
| TWI837443B (zh) * | 2019-12-31 | 2024-04-01 | 南韓商羅門哈斯電子材料韓國公司 | 塗料組成物、經塗覆的基底及形成電子裝置的方法 |
| CN115136074A (zh) * | 2020-02-28 | 2022-09-30 | 日产化学株式会社 | 抗蚀剂下层膜形成用组合物 |
| KR102815691B1 (ko) * | 2020-02-28 | 2025-06-02 | 닛산 가가쿠 가부시키가이샤 | 폴리머의 제조방법 |
| KR102675074B1 (ko) * | 2020-11-20 | 2024-06-12 | 삼성에스디아이 주식회사 | 레지스트 하층막용 조성물 및 이를 이용한 패턴형성방법 |
| US12313971B2 (en) | 2021-07-06 | 2025-05-27 | Dupont Electronic Materials International, Llc | Coated underlayer for overcoated photoresist |
| US20230205087A1 (en) * | 2021-12-29 | 2023-06-29 | Rohm And Haas Electronic Materials Korea Ltd. | Photoresist underlayer composition |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NO173574C (no) | 1984-06-01 | 1993-12-29 | Rohm & Haas | Fremgangsmaate til fremstilling av et termisk stabilt, positivt eller negativt bilde paa en underlagsflate |
| US5128232A (en) | 1989-05-22 | 1992-07-07 | Shiply Company Inc. | Photoresist composition with copolymer binder having a major proportion of phenolic units and a minor proportion of non-aromatic cyclic alcoholic units |
| US5879856A (en) | 1995-12-05 | 1999-03-09 | Shipley Company, L.L.C. | Chemically amplified positive photoresists |
| US6090526A (en) | 1996-09-13 | 2000-07-18 | Shipley Company, L.L.C. | Polymers and photoresist compositions |
| US5939236A (en) | 1997-02-07 | 1999-08-17 | Shipley Company, L.L.C. | Antireflective coating compositions comprising photoacid generators |
| TW419615B (en) * | 1997-09-18 | 2001-01-21 | Ibm | Photo crosslinkable, aqueous base developable negative photoresist composition and method for use thereof |
| TW591341B (en) | 2001-09-26 | 2004-06-11 | Shipley Co Llc | Coating compositions for use with an overcoated photoresist |
| US20040067437A1 (en) * | 2002-10-06 | 2004-04-08 | Shipley Company, L.L.C. | Coating compositions for use with an overcoated photoresist |
| KR20040044368A (ko) * | 2002-11-20 | 2004-05-28 | 쉬플리 캄파니, 엘.엘.씨. | 다층 포토레지스트 시스템 |
| JP4179116B2 (ja) * | 2003-09-11 | 2008-11-12 | Jsr株式会社 | 反射防止膜形成組成物及び反射防止膜の製造方法 |
| US20060057501A1 (en) | 2004-09-15 | 2006-03-16 | Hengpeng Wu | Antireflective compositions for photoresists |
| US7691556B2 (en) | 2004-09-15 | 2010-04-06 | Az Electronic Materials Usa Corp. | Antireflective compositions for photoresists |
| TWI340296B (en) * | 2005-03-20 | 2011-04-11 | Rohm & Haas Elect Mat | Coating compositions for use with an overcoated photoresist |
| EP1720072B1 (en) | 2005-05-01 | 2019-06-05 | Rohm and Haas Electronic Materials, L.L.C. | Compositons and processes for immersion lithography |
| US7553905B2 (en) * | 2005-10-31 | 2009-06-30 | Az Electronic Materials Usa Corp. | Anti-reflective coatings |
| US7919222B2 (en) * | 2006-01-29 | 2011-04-05 | Rohm And Haas Electronics Materials Llc | Coating compositions for use with an overcoated photoresist |
| US20080286689A1 (en) * | 2007-05-14 | 2008-11-20 | Hong Zhuang | Antireflective Coating Compositions |
| US20090042133A1 (en) * | 2007-08-10 | 2009-02-12 | Zhong Xiang | Antireflective Coating Composition |
| US8329387B2 (en) * | 2008-07-08 | 2012-12-11 | Az Electronic Materials Usa Corp. | Antireflective coating compositions |
| US20100092894A1 (en) * | 2008-10-14 | 2010-04-15 | Weihong Liu | Bottom Antireflective Coating Compositions |
| US9244352B2 (en) * | 2009-05-20 | 2016-01-26 | Rohm And Haas Electronic Materials, Llc | Coating compositions for use with an overcoated photoresist |
| US8501383B2 (en) * | 2009-05-20 | 2013-08-06 | Rohm And Haas Electronic Materials Llc | Coating compositions for use with an overcoated photoresist |
| US20110039206A1 (en) * | 2009-05-20 | 2011-02-17 | Rohm And Haas Electronic Materials Llc | Novel resins and photoresist compositions comprising same |
| US8465902B2 (en) * | 2011-02-08 | 2013-06-18 | Az Electronic Materials Usa Corp. | Underlayer coating composition and processes thereof |
| US10539870B2 (en) * | 2013-05-31 | 2020-01-21 | Rohm And Haas Electronic Materials Llc | Photoresists comprising carbamate component |
-
2016
- 2016-10-25 TW TW105134453A patent/TWI646397B/zh active
- 2016-10-26 JP JP2016209997A patent/JP6525378B2/ja active Active
- 2016-10-27 KR KR1020160141353A patent/KR102003215B1/ko active Active
- 2016-10-28 US US15/337,558 patent/US11822248B2/en active Active
- 2016-10-28 CN CN201610996096.0A patent/CN106647170B/zh active Active
-
2019
- 2019-02-05 JP JP2019019040A patent/JP6751454B2/ja active Active
-
2023
- 2023-09-11 US US18/464,695 patent/US12242193B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN106647170A (zh) | 2017-05-10 |
| KR20170054987A (ko) | 2017-05-18 |
| JP6751454B2 (ja) | 2020-09-02 |
| US11822248B2 (en) | 2023-11-21 |
| JP2017097338A (ja) | 2017-06-01 |
| TWI646397B (zh) | 2019-01-01 |
| US12242193B2 (en) | 2025-03-04 |
| US20170123319A1 (en) | 2017-05-04 |
| CN106647170B (zh) | 2021-05-04 |
| TW201716873A (zh) | 2017-05-16 |
| KR102003215B1 (ko) | 2019-07-25 |
| JP2019124943A (ja) | 2019-07-25 |
| US20230418161A1 (en) | 2023-12-28 |
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