TW419615B - Photo crosslinkable, aqueous base developable negative photoresist composition and method for use thereof - Google Patents
Photo crosslinkable, aqueous base developable negative photoresist composition and method for use thereof Download PDFInfo
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- TW419615B TW419615B TW087112044A TW87112044A TW419615B TW 419615 B TW419615 B TW 419615B TW 087112044 A TW087112044 A TW 087112044A TW 87112044 A TW87112044 A TW 87112044A TW 419615 B TW419615 B TW 419615B
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
Abstract
Description
4 19 615 a? , B7 五、發明説明(1 ) 發明範圍 本發明係關於可水性鹼顯影光阻组合物,及以之形成微 影蝕刻圖案之製程° 先前技藝 於電子元件内獲得更高電路密度係電子產業之一持續努 力。爲了獲得更罱之集積.度’業經發展出新穎及改良之微 影餘刻工具及技術,該等接著要求可增進微影钱刻圖案解 像度之新光阻。 經由交聯形成之可水性鹼顯影光阻組合物已揭示於Reck et al.} SPIE regional Technical Conference on Photopolymers, Ellenville,N.Y., 63(1988)與頒予 Feely 之美國專利第 5,034,304及5,204,225號。此種調配物之特徵爲,具有芳香 族邵分’例如聚(經基苯乙締)或盼酸清漆,係對親電子性 芳香基取代敏感;一於酸處理時可形成一陽碳離子之交聯 劑;以及一光酸產生劑。 經濟部中央標隼局負工消泞合忭社印^ ί請先Μ讀背面之注意Ϋ·項再填寫本頁) 頒予艾倫(Allen)等人之美國專利第4,810,601號係關於 負調制光阻圖案之形成,係藉使一芳香族化合物與陽碳離 子之單.體或聚合物來源交聯而得。如此,係將二乙酿氧基 甲表、二乙醯氧基1,3,5 -三甲苯與三苯基疏六氟鲜酸鹽同 時使用以交聯一聚(羥基苯乙烯)基質。 頒予沙克戴夫(Sachdev)之美菌專利第5,296,332號及小海 (Kokai)之日本專利第2-1 5270及1-293339號描述可水性龄顯 影組合物,其係包含一如聚(幾基苯乙稀)或紛駿清漆之紛 -4 - 本紙張尺度適用中國國家標準(CNS ) ( 210x 297^^、) 41 961 5 A7 _____ — B7 ______ 五、發明説明(2 ) 搭樹脂、一可於酸處理時形成陽碳銪離子之交聯剤,以及 —光酸產生劑。 發明摘述 本發.明之一廣泛方面係一可水性鹼顯影光阻组合物,供 於一基板上產生小於1 /4微来負調制光阻影像。本發明之 另一方面係一光阻組合物,其於基板上光阻影像間不會產 生微架橋。此光阻组合物係包含(a)具酚醛官能基之成膜聚 合物樹脂,(b)—可酸催化之交聯劑,選自氨基塑塗料族, 且更特定言之係選自甘脲衍生物’(c) —可輻射降解之酸產 生劑,以協助成膜劑及交聯劑間之交聯,以及(d) —视需要 選用之有機鹼,以改善調配物之貯存穩定性。本發明^ 路聚合物樹脂係選自聚(經基笨乙缔)’部份經保護2 (羥基笨乙烯)或聚(羥基苯乙烯-共-乙埽基環己醇 ^ 列化學式所示: ’如下 t請先閱讀背面之注意事項再填邛本頁} 經濟部中央標挲扃另工消费合作社印鉍4 19 615 a ?, B7 V. Description of the invention (1) Scope of the invention The present invention relates to a water-soluble alkali-developed photoresist composition, and a process for forming a lithographic etching pattern therefrom. Previous techniques have achieved higher circuits in electronic components. Density is one of the continuing efforts of the electronics industry. In order to obtain a more comprehensive accumulation of degrees, the industry has developed new and improved lithographic relief tools and technologies, which in turn require new photoresists that can improve the resolution of lithographic money engraved patterns. Water-soluble alkali-developed photoresist compositions formed by crosslinking have been disclosed in Reck et al.} SPIE regional Technical Conference on Photopolymers, Ellenville, N.Y., 63 (1988) and US Patent Nos. 5,034,304 and 5,204,225 issued to Feely. Such formulations are characterized by having aromatic components such as poly (based on phenylphenylene) or acid varnishes, which are sensitive to substitution of electrophilic aromatic groups; one can form an anionic cation during acid treatment A combination agent; and a photoacid generator. Printed by the Central Bureau of Standards of the Ministry of Economic Affairs of the Ministry of Economic Affairs, ^ Please read the note on the back of the item, and then fill out this page) US Patent No. 4,810,601 issued to Allen and others is related to negative modulation The photoresist pattern is formed by cross-linking an aromatic compound with a monomer or polymer source of anions. In this way, diethyloxymethyl formaldehyde, diethylfluorenyloxy 1,3,5-trimethylbenzene and triphenylphosphloorionate are simultaneously used to crosslink a poly (hydroxystyrene) matrix. US Patent No. 5,296,332 to Sachdev and Japanese Patent Nos. 2-1 5270 and 1-293339 to Kokai describe water-soluble ageing compositions containing Styrene) or Fenjun varnish -4-This paper size applies to Chinese National Standards (CNS) (210x 297 ^^,) 41 961 5 A7 _____ — B7 ______ 5. Description of the invention (2) Cross-linking fluorene of anions and cations during acid treatment, and-photoacid generator. SUMMARY OF THE INVENTION A broad aspect of the present invention is a water-soluble alkali-developed photoresist composition for producing a substrate on a substrate to produce a negatively modulated photoresist image of less than 1/4 micron. Another aspect of the present invention is a photoresist composition which does not generate micro bridges between photoresist images on a substrate. This photoresist composition comprises (a) a film-forming polymer resin having a phenolic functional group, and (b) an acid-catalysable crosslinking agent, selected from the aminoplast coating family, and more specifically, selected from glycoluril. Derivatives' (c) — a radiation-degradable acid generator to assist the cross-linking between the film-forming agent and the cross-linking agent, and (d) — an organic base selected as needed to improve the storage stability of the formulation. The polymer resin of the present invention is selected from the group consisting of poly (Ethylene) and partially protected 2 (Hydroxybenzyl ethylene) or poly (Hydroxystyrene-co-ethenylcyclohexanol). 'Please read the notes on the back before filling in the following page.
419615419615
或如下列一般化學式所示之酚醛清漆(酚甲醛)樹脂:Or novolac (phenol formaldehyde) resin as shown in the following general chemical formula:
OH 0HOH 0H
於---- f請先聞讀背面^-注意?-項再填巧本百) 此组合物之交聯劑係選自由下列化學式所示之甘脲衍生 物: 〇 CH3〇CH2\N Jk n^CH2〇CH3 Rr^~(-R2 _讲/丫、⑽CH3 〇 其中R係一烷氧自由基’較佳爲CH2OCH3,且1^及112可 刀別選自氫、燒基或芳基。本發明之组合物亦可包括一可 輻射降解之酸產生劑。 本發明另一廣泛方面係可作爲本組合物之交聯劑之新穎 甘脲衍生物之合成。 裡濟部中央標挲局只工消贽合作社印" 本發明亦提供一方法,其使用新穎光阻组合物以於一基 板上產生負調制光阻影像,該方法包含 a)於該基板上塗佈一唐膜,包含一具齡搭官能性之成膜 聚合物樹脂、一選自甘脉衍生物之可酸催化交聯劑、及一 可輻射降解之酸產生劑; -6 - 本紙張尺度適用中國國家梯挛(CNS ) 枋(2[〇X2<37公尨) 结濟部中央標4'-局另工消资合作社印氣 4 19615 A / ___... " B7 五、發明説明(4 ) b)以紫外線成像曝光此膜,以造成此膜曝光部份之交 聯: C)於升溫下烘烤該基板,以及 d)於一水性鹼顯影劑中顯影該膜。 本組合物對深紫外線係相當敏感。可藉調整交聯劑對聚 合物樹脂之比率、添加一有機鹼及/或選擇部份經保護聚 (幾基苯乙烯)或酚醛樹脂而調整光阻速度。 圖示簡單説明 圖1至3係顯示使用本發明之不同組合物所製成之影像之 顯微照片。 發明詳述 本發明係關於高解析度、可水性鹼顯影之光阻組合物, 供於基板上形成負調制影像。這些組合物包含a) 一具有紛 官能基之成膜聚合物樹脂;b)—甘脲衍生物交聯劑,其於 酸催化劑作用下可與酚官能基反應並形成交聯;c)—可光 降解之酸產生劑,其於曝露於紫外線時形成交聯時所需之 酸催化劑;以及d)—有機鹼類之三級胺,其係特別加入以 增加此調配物之壽命及調整曝光速度a具酚官能基之聚人At ---- f, please read the back ^-Note?-And then fill in the hundred) The cross-linking agent of this composition is selected from the glycoluril derivative represented by the following chemical formula: 〇CH3〇CH2 \ N Jk n ^ CH2〇CH3 Rr ^ ~ (-R2 _ talk / Ya, ⑽CH3 〇 Wherein R is an alkoxy radical 'is preferably CH2OCH3, and 1 ^ and 112 may be selected from hydrogen, alkyl or aryl. The composition of the present invention may also include a radiation-degradable acid generator. Another broad aspect of the present invention is the synthesis of a novel glycoluril derivative which can be used as a cross-linking agent of the composition. Industrial Consumer Cooperative Press " The invention also provides a method that uses a novel photoresist composition to produce a negative modulation photoresist image on a substrate. The method includes a) coating a Tang film on the substrate, including a Functional film-forming polymer resin, an acid-catalyzed cross-linking agent selected from the derivatives of Ganmai, and a radiation-degradable acid generator; -6-This paper is applicable to China ’s national ladder (CNS ) 枋 (2 [〇X2 < 37 public 尨) Ministry of Economic Affairs Central Standard 4'-Industrial Cooperation and Consumer Cooperatives India Gas 4 19615 A / ___... " B7 five Explanation of the invention (4) b) Exposing the film by ultraviolet imaging to cause cross-linking of the exposed portions of the film: C) Baking the substrate at elevated temperature, and d) Developing the film in an aqueous alkali developer. This composition is quite sensitive to deep ultraviolet rays. The photoresist speed can be adjusted by adjusting the ratio of the cross-linking agent to the polymer resin, adding an organic base, and / or selecting a portion of the protected poly (severe styrene) or phenolic resin. Brief description of the figures Figures 1 to 3 are photomicrographs showing images made using different compositions of the invention. Detailed Description of the Invention The present invention relates to a high-resolution, water-soluble alkali-developed photoresist composition for forming a negatively modulated image on a substrate. These compositions include a) a film-forming polymer resin having various functional groups; b) a glycoluril derivative cross-linking agent that can react with a phenol functional group and form a cross-link under the action of an acid catalyst; c) Photodegradable acid generator, which forms the acid catalyst required for crosslinking when exposed to ultraviolet light; and d)-tertiary amines of organic bases, which are specially added to increase the life of this formulation and adjust the exposure speed a polymer with phenol functional group
物樹脂係選自聚(羥基苯乙烯),部分經保護之聚(_武Q 乙烯)或聚(羥基苯乙烯-共-乙烯環己醇),如风:笨 广化学式所 示: Γ請先閱讀背而之注意事¾再填朽本頁)The resin is selected from the group consisting of poly (hydroxystyrene), partially protected poly (_Wu Q ethylene) or poly (hydroxystyrene-co-ethylene cyclohexanol), as shown by the chemical formula: (Read the Behind-the-scenes ¾ refill this page)
.-IIP.-IIP
419615 五、發明説明(5 A7 B7419615 V. Description of the invention (5 A7 B7
其中R可爲具Cl-4坡基、乙酿一 (CH3COCH2CH2-)(故基,且y係任何位於〇 5至^之間的數 目,且n>!,較佳n係大於20,以2〇>η>ι〇〇爲最佳。本發 明組合物之較佳交聯劑係甘射f生物,其-般化學式爲 基、羥烷基、乙醯氧基烷基Wherein R can be Cl-4, base, CH3COCH2CH2- (the base, and y is any number between 0 and ^, and n >!, Preferably n is greater than 20, with 2 〇 > η > ι〇〇 is the best. The preferred cross-linking agent of the composition of the present invention is Gan Shef, its general chemical formula is a group, hydroxyalkyl, ethoxyalkyl
R' FVR 'FV
〇 A〇 A
.R -R2 R..R -R2 R.
X Ν、 ί'Ι 濟 部 中 央 標 準 消 贫, 合 if 社 印 其中R係一坑氧基’較佳爲CH2〇ch: 自具1至6個碳原子之烷基,實例爲 U)肆-甲氧基甲基-3a,6a_二乙基甘脲 ㈨肆1氧基甲基_3a'甲基如;基甘聰’以及 (c)肆-甲氧基甲基_3a_甲基 . 示. 悉以丁基甘脲,如下列化學式坼 且R|及R_2可分別選 8- 木紙張尺度適用尹國S家標準(CNS ) (210 x291-:·)· ) -- f請先閲讀背面之注意Ϋ-項再填寫本頁)X Ν, ί'Ι Central Ministry of Economic Affairs standard for poverty alleviation, which is printed by Rif, where R is a oxy group, preferably CH2Och: an alkyl group having 1 to 6 carbon atoms, an example is U)- Methoxymethyl-3a, 6a-diethylglycoluril is 1oxymethyl-3a 'methyl such as; Giganton' and (c) 4-methoxymethyl-3a_methyl. It is shown that butyl glycoluril, if the following chemical formula 坼 and R | and R_2 can be selected respectively 8- wood paper standard applicable to the National Standard (CNS) (210 x291-: ·) ·)-f Please read first (Note on the back-fill in this page again)
4 19615 , A 7 B7 五、發明説明(6 〇 R、 CH3CH2-4 19615, A 7 B7 V. Description of the invention (60 〇, CH3CH2-
N .'N -ch2ch3N .'N -ch2ch3
N .丫 〇 (a) 人 ν’ eh 士 —(—(CH2)2CH3 ch3 r/ Ν' 'Ν'N. Ya 〇 (a) person ν ’eh person — (— (CH2) 2CH3 ch3 r / Ν '' Ν '
.R (CH2)3CH3 、R c請先閱讀背面之注意餐項再填朽本頁) i" 〇 (b) 〇⑹ *π 經濟部中夾標挲扃员工消资合作社印装 R]及R〗亦可選自悦基及芳基或氣及芳基,如(d)肆甲氧基曱 基-3a-苯基甘脲,以及(e)肆-甲氧基曱基_3a-甲基-6a-苯基 甘脲,如下列化學式所示··.R (CH2) 3CH3, R c, please read the note on the back before filling out this page) i " 〇 (b) 〇⑹ * π in the Ministry of Economic Affairs 挲 扃 printed by staff consumer cooperatives] and R 〖Can also be selected from ytyl and aryl or qi and aryl, such as (d) methylmethoxymethyl-3a-phenylglycourea, and (e) methylmethylmethoxy-3a-methyl -6a-phenylglycol urea, as shown in the following chemical formula ...
R 又 N IT ~ (-C6H5/丫% 〇⑹R and N IT ~ (-C6H5 / γ% 〇⑹
'M f\T ch3- c6h5 〇 (e) -9- 本纸乐尺度適用中國國家標準(CNS ) Λ4Μί格(210x297*i?· ^ 1 9 61 5 A7 B7 五 '發明説明( 1^及尺2均可爲如苯基、雙糠醯基或烷苯基等芳基及鹵化芳 基或經取代之二苯醚基,如下列化學式(f)至(h)所舉例説 明: 〇 ch3och2' Ν' CH3OCH2/ ,Ν- 〇 .CH^OCHg t'Bu 、CH2〇CH3 (f) 〇 (請先閏讀背面之注意事項再填{:ii本石; 〇'M f \ T ch3- c6h5 〇 (e) -9- The paper scale is applicable to the Chinese National Standard (CNS) Λ4Μί 格 (210x297 * i? · ^ 1 9 61 5 A7 B7 Five' Description of the invention (1 ^ and ruler 2 can be aryl groups such as phenyl, difurfuryl, or alkylphenyl, and halogenated aryl groups or substituted diphenyl ether groups, as illustrated by the following chemical formulas (f) to (h): 〇ch3och2 'Ν 'CH3OCH2 /, Ν- 〇.CH ^ OCHg t'Bu 、 CH2〇CH3 (f) 〇 (Please read the precautions on the back before filling in {: ii 本 石; 〇
,1T CH3〇CH2^, 1T CH3〇CH2 ^
NT 'Ν' xh2〇ch3 CH3〇CH2^n^n.CH2OCH3 CH3 ~(〇)~~)~CH3 CH3〇CH, ~丫 N'ChbOCHs o -Ό.+. (N^0^ 〇NT 'N' xh2〇ch3 CH3〇CH2 ^ n ^ n.CH2OCH3 CH3 ~ (〇) ~~) ~ CH3 CH3〇CH, ~ Ah N'ChbOCHs o -Ό. +. (N ^ 0 ^ 〇
FF
F (g) 好〆:部屮AiT^i;Jh工消於合忭"卬4·';ϊ: (h) 本發明之组合物較佳亦包括一光酸產生劑(photoacid generator,簡稱爲PAG),可選自第四族元素之鏆鹽類,如 將以參考文獻方式併入本文中之美國專利第4,175,972號所 揭示之敎示,及第五a族元素之芳香族鏘鹽類,於將以參 -10 - 本纸if、尺度適州中阀國家標準(CNS ) Α4規格(210X297公釐) 419615 A7 B7 五、發明説明(8 ) 考文敵方式併入本文中之美國專利第4,〇69,〇55號所揭示之 敎不。芳香族第六&族鏘鹽類包括以、不列化學式表示者: [⑻a(Rl)b(R2)cx]d+[MQe]-(e-f) 其中R係單價芳香族有機自由基,r1係一選自烷基 '環烷 基及經取代乾基等單價有.機脂肪族自由基,R2係一形成雜 5衣或这融環結構之多價有機自由基,X係一第六&族元素或 類金屬’ Q係—鹵素自由基,a係一包括〇至3之整數,b係 包括〇至2之整數,及c係一等於〇或1之整數。 爲11所包括之自由基係例如(C6-C)之芳香族碳氫自由基, 例如酚基、甲苯基、二甲苯基、莕基、蒽基,以及經由! 至4個~例如C〇-s)烷基、C(1_s)烷氧基、硝基、氣基、氟基及 在基等單仏自由基所取代之自由基;如紛乙醯基之芳基醯 基自由基;例如吡啶基及呋喃基之芳香族雜環自由基:R1 自由基包括Cd-8)烷基,例如-c2h4och3 ' -CH2-COCH3等之 經取代歧*基;R2自由基包括如下之結構: (請先閲讀背面之注意事項再填艿本f ) 丁 、y-°F (g) Anyway: Ministry of AiT ^ i; Jh Industry and Consumers " 卬 4 · '; ϊ: (h) The composition of the present invention preferably also includes a photoacid generator (referred to as PAG), which may be selected from the phosphonium salts of Group IV elements, such as those disclosed in US Patent No. 4,175,972, which is incorporated herein by reference, and the aromatic phosphonium salts of Group 5a elements In the US patent incorporated by reference -10-this paper if, size of the national valve standard (CNS) A4 (210X297 mm) 419615 A7 B7 V. Description of the invention (8) No doubt disclosed in No. 4, 〇69, 〇55. Aromatic sixth & group phosphonium salts include those represented by the following formulas: [⑻a (Rl) b (R2) cx] d + [MQe]-(ef) where R is a monovalent aromatic organic radical and r1 is A monovalent organic radical selected from the group consisting of alkyl 'cycloalkyl and substituted dry radicals. R2 is a polyvalent organic radical forming a hetero5 or a ring-melting structure, and X is a sixth & Group elements or metalloids' Q series—halogen radicals, a is an integer including 0 to 3, b is an integer including 0 to 2, and c is an integer equal to 0 or 1. The radicals included in 11 are aromatic hydrocarbon radicals such as (C6-C), such as phenol, tolyl, xylyl, fluorenyl, anthracenyl, and via! To 4 ~ For example, C0-s) alkyl, C (1-s) alkoxy, nitro, gas group, fluoro group and radicals substituted by monofluorene radicals; Aromatic heterocyclic radicals such as pyridyl and furyl: R1 radicals include Cd-8) alkyl groups, such as -c2h4och3 '-CH2-COCH3 and the like, substituted amido groups; R2 radicals Including the following structure: (Please read the notes on the back before filling in this f) D, y- °
^'M·"十Α"ί;:)·,η1_;ή"合竹.^-印1!ί 由上述化學式之MQe-( BF4·、PF6·、SbF6-、FeCI4. GaCl4_、InF4·等。 由上述化學式所包括之六 _f)所-包括之複合陰離子係例如 ' SnCl6·、SbCl6·、BiCl5'、A1F6·3、 族鏘鹽類係例如 -11 - 本k張尺m丨哪將料(CNS)如規格(2IGx:297公楚^ 'M · " 十 Α "ί;) ,, η1_; ή " 合 竹. ^-印 1! Ί From the above formulae MQe- (BF4 ·, PF6 ·, SbF6-, FeCI4. GaCl4_, InF4 · Etc. The compound anion system included in the above-mentioned chemical formula 6_f)-for example, 'SnCl6 ·, SbCl6 ·, BiCl5', A1F6 · 3, family phosphonium salt systems, such as -11-this k Zhang m m Which The material (CNS) is as specified (2IGx: 297 cm)
XX
N—〇一s〇N-〇-s〇
V 961 5V 961 5
適用於本發明組合物之非金屬輻射可降解酸產生劑爲下 列形式之N-續醯基氧基醯亞胺:Non-metallic radiation-degradable acid generators suitable for use in the composition of the present invention are N-continuyloxyphosphonium imines in the following form:
2~~R 其中r係選自甲苯、笨、CF3、CF2CF3、_(CF2)nmn 们至4,且z係氫或貌基或芳基,且其中係⑴形成 可包括或不包括雜原子之料狀環,或⑺形成1融芳族 環,或⑶分別爲氫、垸基或芳基,而Cw2即可形成一 12- 本纸&尺/JlM 用中围囡家#準(CNS ) 210X297^7^- (請先閲讀背面之注意事項再蜞寫本頁)2 ~~ R where r is selected from toluene, benzyl, CF3, CF2CF3, _ (CF2) nmn to 4 and z is hydrogen or aryl or aryl, and wherein hydrazone is formed with or without heteroatoms The material ring, or fluorene, forms a fused aromatic ring, or ⑶ is hydrogen, fluorenyl, or aryl, respectively, and Cw2 can form a 12-paper & ruler / JlM using 中 围 囡 家 # 准 (CNS) 210X297 ^ 7 ^-(Please read the notes on the back before copying this page)
419615 Α7 Β7 五、發明説明(ΊΟ) 單鍵或雙鍵。 本發明之組合物亦可包含小量選自有機胺之鹼性化合物, 特別是選自三級胺。 本發明之组合物較佳係於溶劑或溶劑系統e攜帶這些组 合物所使用之溶劑或溶劑.系統較佳係可滿足於基板上提供 以光阻成份完全遮蔽的均勻被覆的需要。此溶劑較佳係於 不會於乾燥步驟時使光阻之光活化受影響,而且不會加入 光阻操作(對朌趁樹脂及/或交聯劑無反應)之溫度下蒸 發。典型之這些溶劑係丙二醇單甲基醚乙酸酿 (propyleneglycol monomethyl ether acetate,簡稱爲 PGMEA)、 乙基-3-乙乳基丙酸鹽(ethyi_3_ethoxypropionate,簡稱爲 EEP)、甲氧基丙醇、乙氧基丙醇、丁氧基丙醇以及乳酸 乙酯。 ill/f·:部中戎 K.iv-XJm_T.l.i/I於合々;;;.卬 S-; (請先閱讀背面之ji意事唄再嗔5>?表頁」419615 Α7 Β7 5. Description of the invention (ΊΟ) Single or double bond. The composition of the present invention may also contain a small amount of a basic compound selected from organic amines, especially a tertiary amine. The composition of the present invention is preferably a solvent or a solvent system e to carry the solvents or solvents used for these compositions. The system is preferably to meet the need to provide a uniform coating on the substrate that is completely shielded with photoresist components. This solvent is preferably one which does not affect the photoactivation of the photoresist during the drying step, and does not evaporate at a temperature at which the photoresist operation (without reaction with the resin and / or the crosslinking agent) is added. Typical of these solvents are propyleneglycol monomethyl ether acetate (PGMEA for short), ethyl-3-ethoxypropionate (EEP), methoxypropanol, and ethoxylate. Propanol, butoxypropanol, and ethyl lactate. ill / f ·: Ministry Zhong Rong K.iv-XJm_T.l.i / I Yu Heyue ;;. 卬 S-; (Please read the ji meaning on the back 呗 5 >?
、}ST 爲形成負調制影像’係將本發明之组合物施用(如,藉 旋轉被覆)於一基板上,且藉於一加熱板上於大約攝氏7〇 至130度之溫度下加熱基板1至3分鐘,以將殘留溶劑蒸 發。然後將此膜成像曝光於具20〇至37〇毫微米波長之紫外 線照射’以使組合物内可輻射降解之成分降解並形成催化 量之酸·。藉由將基板於攝氏7〇至13〇度加熱較佳1至3分鐘 而加速酚醛樹脂與交聯劑間之交聯反應。如此將使影像較 不易溶或不溶於水性鹼及於顯像階段中,可藉如四甲基氫 氧化按(tetramethylammonium hydroxide,簡稱爲 TMAH)等 稀釋溶液之水性鹼將未曝光區域移除。 於本發明之另一個具體實施例中,作爲交聯劑用之甘脲 -13- 本纸 mi :操準(CNS ) Λ4規格(210X297公趁)〜 ' '――-- 41 9 B1 〇 A7 B7 五、發明説明(11 衍生物係自下列路徑所示之對應二羰基化合'物合成 而來 Η* CO(f^b)2 Ο * Ηζ〇 Ο、 ST for forming a negative modulation image is applying the composition of the present invention (for example, by rotating coating) on a substrate, and heating the substrate at a temperature of about 70 to 130 degrees Celsius by a heating plate 1 To 3 minutes to evaporate the residual solvent. This film is then imagewise exposed to UV radiation having a wavelength of 20 to 37 nm to degrade the radiation-degradable components in the composition and form a catalytic amount of acid. The crosslinking reaction between the phenol resin and the crosslinking agent is accelerated by heating the substrate at 70 to 130 degrees Celsius, preferably for 1 to 3 minutes. This will make the image less soluble or insoluble in aqueous alkali and in the development stage, the unexposed areas can be removed by aqueous alkali such as tetramethylammonium hydroxide (TMAH) diluted solution. In another specific embodiment of the present invention, the glycoluril-13- paper used as a cross-linking agent mi: the standard (CNS) Λ4 size (210X297) while the ~ ~ --- 41 9 B1 〇A7 B7 V. Description of the invention (11 Derivatives are synthesized from the corresponding dicarbonyl compounds shown in the following path: * CO (f ^ b) 2 〇 * Ηζ〇〇
HDHD
人 Ch^OH R' R-Human Ch ^ OH R 'R-
-B κ^γ% 0 HD O o-B κ ^ γ% 0 HD O o
(請先閱讀背面之::i意事項再填i:s,i本頁) '11 本發明之甘脲衍生物係高度落於所選定之有機落 與未經取代甘脲相較,將降低最终组合物於驗性顯 之溶解率。 心d 輕貌基取代甘踩製借的一般程;^ 經校基取代甘脉之合成係藉下列所述之3a_甲基如丙基 默之合成而舉例説明。 將2,3-己二阴(1.0莫耳)及尿素(3,〇莫耳)加入2〇升之2% 氣酸中,並於室溫下攪拌溶液—歷24小時(或者,將此溶 回流歷2-3小時)。將沈澱物“後經水而後爲乙醇清洗 再乾燥之。錢^醋酸中將此灰白色粉末結晶化以完 45%產率之分析性地純標題化合物。 14- 本纸张尺度適州中囚®家標萆(CNS ) Μ規格(2!0·χ 297公I ) 419615 A7 B7 ί:ΐ:才—部屮-欠 m T.消 合作 印 五、發明説明(12’ 丝芳基取代備的一般程庠 將適當之二苯基乙二酮衍生物(路徑1,尺丨及112係芳基或烷 基及芳基之组合)(1〇莫耳)及尿素(〇3莫耳)於3〇〇毫升之 甲苯中懸浮’並加入5〇毫升之三氟乙酸。將所生成溶液 回流8小時’於其間經由狄恩-史塔克捕捉器(Dean-Stark trap)將水分移除。將此溶液冷卻室溫,並將沈積之結晶材 料渡出,再以甲苯’而後爲己烷沖洗,並乾燥。 _甘脲之氫氣甲某i 於37%水性甲酸溶液(〇 5莫耳)中懸浮甘脲衍生物(〇.〖莫 耳)’並以添加1 〇%之氫氧化鈉之方式將pH値調整至1〇至 1 1。將所得混合物於攝氏5 〇度加熱2 4小時,以使所有的 固體都溶解於溶液中。將此溶液冷卻至室溫,並於減壓下 私除永份。殘留物(不是固體就是黏糊狀物料)將於下個步 驟中使用,不須再經進一步純化動作。 風基塑料化合物之酸化 將肆·羥甲基甘脲轉換成其相對應之四甲氧甲基衍生物, 其係藉於過多2,2-二甲氧基丙虼中懸浮,然後再加入幾滴 濃縮氫氣酸,再於室溫下攪拌此混合物24小時。係於減壓 下移除其溶劑,且殘留物不是利用適當溶劑結晶化(如於 —芳基或燒基芳基取代甘脉之狀況)’就是於高眞空及二 溫下將油狀殘留物蒸餾(例如於甲基丙基或甲基丁及等狀 況),以產生所欲之甘脲之肆-甲氧基甲基衍生物。 接下來之實例係詳細描述本發明之製備方法及製程之使 用。詳細之製備係位於上述更一般詳述方法之範疇内又且 -15- 本紙乐尺度適 ( CNS ) ( 2I0x"29T^~) ' ' '~~~---- (锖先閱讀背面之注意事項再填巧本頁) 訂 經濟部中夬標隼局貝工消費合作社印裝(Please read the ": i" on the back before filling in "i: s" on this page.) '11 The glycoluril derivatives of the present invention are highly selected from the organic compounds selected. Compared with unsubstituted glycoluril, it will be lower. The dissolution rate of the final composition was apparent. The general procedure for replacing the light-weight group with the light-weight group is as follows: ^ The synthesis of the light-emitting group with the light-emitting group is illustrated by the synthesis of 3a-methyl such as propyl group as described below. Add 2,3-dioxane (1.0 mole) and urea (3.0 mole) to 20 liters of 2% gas acid, and stir the solution at room temperature for 24 hours (or, Reflux for 2-3 hours). The precipitate was "washed with water and then ethanol and then dried. This off-white powder was crystallized in acetic acid to complete the analytically pure title compound at a 45% yield. 14- This paper is suitable for Shizhou Zhongyuan® Home Standard 萆 (CNS) Μ specifications (2! 0 · χ 297 male I) 419615 A7 B7 ί: ΐ: 才 — 部 欠-Tm T. Consumer cooperation printing 5. Description of the invention (12 'silk aryl substituted for the general Cheng Wei will apply the appropriate diphenylethylenedione derivative (path 1, feet, and 112 are aryl or a combination of alkyl and aryl) (10 mole) and urea (03 mole). 0 ml of toluene was suspended 'and 50 ml of trifluoroacetic acid was added. The resulting solution was refluxed for 8 hours' during which the water was removed via a Dean-Stark trap. This solution was removed Cool down at room temperature, leave the deposited crystalline material, rinse with toluene ', then hexane, and dry. _ Glycolurium Hydrogen Membrane i Suspend glycoluril in a 37% aqueous formic acid solution (05 mol). Derivatives (〇. 〖Mole) 'and the pH was adjusted to 10 to 11 by adding 10% sodium hydroxide. The resulting mixture was mixed The contents were heated at 50 degrees Celsius for 24 hours to dissolve all the solids in the solution. This solution was cooled to room temperature and the permanent parts were removed under reduced pressure. Residues (either solids or sticky materials) It will be used in the next step without further purification. The acidification of the wind-based plastic compound will convert the methylol glycoluril into its corresponding tetramethoxymethyl derivative, which is borrowed from too much 2 Suspended in 2,2-dimethoxypropane, and then added a few drops of concentrated hydrogen acid, and the mixture was stirred at room temperature for 24 hours. The solvent was removed under reduced pressure, and the residue was not crystallized with a suitable solvent (Such as in the case of -aryl or aryl aryl substituted for Ganmai) 'is the distillation of the oily residue (such as in methylpropyl or methylbutane and other conditions) at high altitude and two temperatures to The desired methoxymethyl derivative of glycoluril is produced. The following examples describe in detail the preparation method and the use of the process of the present invention. The detailed preparation is within the scope of the more general detailed method described above and -15- Paper Scale (CNS) (2I0x " 29T ^ ~) '' '~~~ ---- (锖 Please read the notes on the back before filling out this page) Order Printed by the Ministry of Economic Affairs, Bureau of Standardization, Shellfisher Consumer Cooperative
二賞例僅係作為舉例說明之目的用,並 13 9 615 第87U2〇44號專利_請案 中文說明書修正頁(88年6月) 五、發明説明( 係作為舉例用。這歧會々,丨役# ^ 非意欲對本發明之範疇設限。 實例I ’及(4 -羥基苯乙烯_共_乙烯基環己醇)(其中羥基苯 乙缔對乙缔基5袁己淀之莫耳比為9:1)(1〇克)及> 甲基.6a_ ,基-肆-甲氧基甲基甘脲(1〇克)及(三氟甲基磺醯基 氧基一ί尽[2_2.1]庚_5_烯_2,3_二羧醯亞胺八〖〇〇毫克)溶解 於50¾升之丙二醇單乙基乙醚乙酸酯(pGMEA)中。所生 成义/谷液經0.25微米之過濾器過濾,並旋轉被覆於一基板 上。在攝巧110度烘烤i分鐘之後’以大約2〇毫焦耳/平方 公为之248宅微米紫外線,使用〇 5 να I-線之步進及重覆 工具加以曝光。在攝氏11〇度硬烤至分鐘之後,於〇 26 水性四甲基氳氧化銨顯影光阻。因此形成具良好定義之 220毫微米線之高解析度影像(圖丨)d 只例II.將聚(4 -羥基苯乙烯)(1〇克)及肆-四甲氧基甲基_ 3杜,6&-雙-[4-(4-第三-丁基苯氧基)苯基]甘脲(〇45克)以及 肆-甲氧基甲基甘脲(P〇wderi丨nk)(〇.8克)以及MDT(1.20克) 溶解於50毫升之PGMEA中。將此溶液旋轉被覆於一矽晶 圓上’形成0.5微米之乾燥厚度,並經由一光罩以大约2〇 毫焦耳/平方公分之248毫微米紫外線曝光之。然後將此基 材於攝氏110度下烘分鐘,再於0 26 N之水性四甲基氫 氧化銨溶液顯影’並以水沖洗。形成最大0.22微米之高解 析影像,如SEM照片中所示(圖2 )。 實例III.將聚(4-羥基苯乙烯)(〖〇克)、肆-甲氧基甲基- 3a-甲基-6a-丁基甘脲(1·1克)以及MDT( 1.20克)溶解於5 0毫升 -16- 本紙張尺度適用中國國家標準(CNS ) Α4規格(210Χ297公釐) ---------1------IT------ii .(請先閱讀背面之注意事項再填寫本頁) 61 5 A7 B7 五、發明説明(14) 之PGMEA中,並通過〇·2微米之過濾器過濾之。將所生成 溶液旋轉被覆於一矽晶圓上,形成大約〇6微米之乾燥厚 度。此晶圓係於攝氏95度烘烤以移除過多之溶劑,並以大 約20耄焦耳/平方公分之248毫微米紫外線,使用〇二^八之 步進及重覆工具曝光之。曝光後,先於攝氏95度下烘烤1 分鐘,然後於0.14 N之水性四甲基氫氧化銨溶液中顯影。 形成200毫微米之高解析影像(圖' (讀先閱讀背面之注意事項再填寫本育) 訂 部 中 4\ If. 卑 消 f: Aίι ίΐ- 印 -17- 本纸张尺度迠川屮家標彳(rNS 格(2l〇x 297公釐)The second reward example is only for the purpose of illustration, and the patent of 13 9 615 No. 87U2044_ petition for the amendment to the Chinese specification (June 88) 5. The description of the invention (for the purpose of illustration.丨 服 # ^ It is not intended to limit the scope of the present invention. Example I 'and (4-hydroxystyrene_co_vinylcyclohexanol) (wherein hydroxyphenylethylene to ethylene 5 Mohs ratio of ethylene 9: 1) (10 g) and > Methyl. 6a_, methyl-methyl-methoxymethyl glycoluril (10 g), and (trifluoromethylsulfonyloxy) all [2_2 .1] Hepta-5_ene_2,3_dicarboximide octa [00 mg] was dissolved in 50 ¾ liters of propylene glycol monoethyl ether acetate (pGMEA). Filtered by a micron filter and spin-coated on a substrate. After baking at 110 ° C for 1 minute, '248 μm UV at approximately 20 mJ / cm², using a step of 0 να I-line Enter and repeat the tool for exposure. After hard roasting at 11 ° C to minutes, develop the photoresist at 026 aqueous tetramethylphosphonium ammonium oxide. Therefore, a well-defined high-resolution image of 220 nm lines is formed. Like (Figure 丨) d Example II. Poly (4-hydroxystyrene) (10 g) and 4-tetramethoxymethyl-3 du, 6 & -bis- [4- (4-third -Butylphenoxy) phenyl] glycol urea (45 g) and methoxymethylglycol urea (Powderini) (0.8 g) and MDT (1.20 g) were dissolved in 50 ml PGMEA. This solution was spin-coated on a silicon wafer to form a dry thickness of 0.5 micron, and was exposed through a photomask with about 20 millijoules per square centimeter of ultraviolet light at 248 nanometers. Then the substrate was exposed. Bake at 110 ° C for one minute, then develop in 0 26 N aqueous tetramethylammonium hydroxide solution and rinse with water. A high-resolution image with a maximum of 0.22 microns is formed, as shown in the SEM photograph (Figure 2). Example III. Dissolve poly (4-hydroxystyrene) (0 g), methyl-methoxymethyl-3a-methyl-6a-butylglycol urea (1.1 g), and MDT (1.20 g) in 50 ml -16- This paper size applies to China National Standard (CNS) A4 specification (210 × 297 mm) --------- 1 ------ IT ------ ii. (Please (Please read the notes on the back before filling out this page) 61 5 A7 B7 V. Invention (14) in PGMEA and filtered through a 0.2 micron filter. The resulting solution was spin-coated on a silicon wafer to form a dry thickness of about 0.6 micron. This wafer was at 95 ° C Bake to remove excess solvent and expose it with approximately 20 耄 Joules / cm 248 nm UV using a step and repeat tool of 0.28. After exposure, it was baked at 95 ° C for 1 minute, and then developed in a 0.14 N aqueous tetramethylammonium hydroxide solution. Form a high-resolution image of 200 nm (Figure '(read the precautions on the back before filling in this education) 4 \ If. Nishi f: Aίι ίΐ- 印 -17- standard of this paper 迠 川 屮 家 标彳 (rNS grid (2l0x 297 mm)
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US10120281B2 (en) | 2014-02-05 | 2018-11-06 | Fujifilm Corporation | Actinic ray-sensitive or radiation-sensitive resin composition, actinic ray-sensitive or radiation-sensitive film, mask blank provided with actinic ray-sensitive or radiation-sensitive film, photomask, pattern forming method, method for manufacturing electronic device, and electronic device |
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KR20030034292A (en) * | 2001-10-18 | 2003-05-09 | 주식회사 한국케믹스 | Chemically amplified positive resist composition |
KR20030063058A (en) * | 2002-01-22 | 2003-07-28 | 삼성전자주식회사 | Negative Photoresist And Method Of Manufacturing Pattern Using The Same |
CA2529420A1 (en) | 2003-06-20 | 2004-12-29 | Rudolf Faust | End-capped polymer chains and products thereof |
US7226979B2 (en) | 2004-02-11 | 2007-06-05 | University Of Massachusetts Lowell | Copolymers comprising olefin and protected or unprotected hydroxystyrene units |
US7056985B2 (en) | 2004-02-11 | 2006-06-06 | University Of Massachusetts Lowell | End-capped polymer chains and products thereof |
KR100866748B1 (en) * | 2007-01-05 | 2008-11-03 | 주식회사 하이닉스반도체 | Photoresist composition and method for forming pattern |
US7749680B2 (en) | 2007-01-05 | 2010-07-06 | Hynix Semiconductor Inc. | Photoresist composition and method for forming pattern of a semiconductor device |
TWI646397B (en) * | 2015-10-31 | 2019-01-01 | 南韓商羅門哈斯電子材料韓國公司 | Coating compositions for use with an overcoated photoresist |
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JP2722870B2 (en) * | 1991-06-14 | 1998-03-09 | 日本ゼオン株式会社 | Resist composition |
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DE69402232T2 (en) * | 1993-02-26 | 1997-09-18 | Ibm | Universal negative working photoresist |
JPH07306531A (en) * | 1994-05-11 | 1995-11-21 | Japan Synthetic Rubber Co Ltd | Radiation sensitive resin composition |
JPH08292561A (en) * | 1995-04-24 | 1996-11-05 | Hitachi Chem Co Ltd | Negative type resist composition and production of resist image |
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US5646213A (en) * | 1996-06-28 | 1997-07-08 | Arco Chemical Technology, L.P. | High-solids and powder coatings from hydroxy-functional acrylic resins |
JP3071401B2 (en) * | 1996-07-05 | 2000-07-31 | 三菱電機株式会社 | Fine pattern forming material, method of manufacturing semiconductor device using the same, and semiconductor device |
JP3677952B2 (en) * | 1996-07-18 | 2005-08-03 | Jsr株式会社 | Radiation sensitive resin composition |
JPH1069082A (en) * | 1996-08-26 | 1998-03-10 | Sumitomo Chem Co Ltd | Negative resist composition |
JPH10207065A (en) * | 1997-01-28 | 1998-08-07 | Mitsubishi Chem Corp | Photosensitive composition, photosensitive plate for lithographic printing plate and manufacture of this lithographic printing plate |
JP3637723B2 (en) * | 1997-03-12 | 2005-04-13 | Jsr株式会社 | Negative radiation sensitive resin composition |
JPH10282668A (en) * | 1997-04-10 | 1998-10-23 | Mitsubishi Chem Corp | Radiation sensitive resin material and radiation sensitive coating composition |
JP3496916B2 (en) * | 1997-06-19 | 2004-02-16 | 東京応化工業株式会社 | Negative resist composition for electron beam |
JP3991462B2 (en) * | 1997-08-18 | 2007-10-17 | Jsr株式会社 | Radiation sensitive resin composition |
JP3816640B2 (en) * | 1997-09-03 | 2006-08-30 | 東京応化工業株式会社 | Pattern forming resist laminated body and pattern forming method using the same |
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US10120281B2 (en) | 2014-02-05 | 2018-11-06 | Fujifilm Corporation | Actinic ray-sensitive or radiation-sensitive resin composition, actinic ray-sensitive or radiation-sensitive film, mask blank provided with actinic ray-sensitive or radiation-sensitive film, photomask, pattern forming method, method for manufacturing electronic device, and electronic device |
TWI657111B (en) * | 2014-02-05 | 2019-04-21 | 富士軟片股份有限公司 | Actinic ray-sensitive or radioactive ray-sensitive resin composition, actinic ray-sensitive or radioactive ray-sensitive film, mask blanks having actinic ray-sensitive or radioactive ray-sensitive film, photomask, pattern forming method, method for produ |
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