JP6518405B2 - Semiconductor manufacturing apparatus and semiconductor manufacturing method - Google Patents

Description

  The present invention relates to a semiconductor manufacturing apparatus and a method of manufacturing a semiconductor, and in particular, a semiconductor manufacturing method capable of easily mounting a wafer on a ring frame (also referred to as a "wafer frame") to which a dicing tape is attached. The present invention relates to an apparatus and a method of manufacturing a semiconductor.

  Conventionally, in general, the back surface of a semiconductor wafer (simply referred to as a "wafer") on which semiconductor devices, electronic components and the like are formed is ground, and then diced into chips such as ICs. There has been a need for a ring frame on which dicing tape is attached with a corresponding size, and a dicing apparatus having a chuck table (see, for example, Patent Document 1). That is, for example, when dicing a wafer having an outer diameter of 300 mm, a dicing apparatus provided with a ring frame having an inner diameter of 350 mm and a chuck table for 300 mm is used.

  In addition, the diameter of the wafer has been increased year by year in order to improve productivity, and today, the maximum outer diameter is increased from 300 mm to 450 mm. This trend will continue in the future, and it is expected that the diameter will become larger. Along with this, wafer calibers for mounting wafer mounts, die bonders for bonding chips to package substrates, etc., dicing tapes and ring frames used for singulation, and carriers for storing them are also enlarged. It is necessary to prepare for the For this reason, it is expected that cost and time will be very expensive.

  Therefore, conventionally, after mounting a large-diameter wafer on a ring frame to which a dicing tape has been attached, the large-diameter wafer is set along with the ring frame in a large-diameter dicer, and the large-diameter wafer is divided into four or more smaller pieces. A dicing system has also been proposed in which the divided wafer is diced with a small-diameter dicer to divide it into chips such as ICs (see, for example, Patent Document 2).

  The technique disclosed in Patent Document 2 divides a large-diameter wafer into four or more smaller pieces so that the dividing process can be performed with a small-diameter dicer. However, such a method requires at least one large-diameter dicer that divides a large-diameter wafer into four or more. For this reason, in order to divide and process a large diameter wafer, it is necessary to prepare a dicer corresponding to the large diameter.

  Also, when setting a wafer in a dicer, mount the wafer on a ring frame to which a dicing tape is attached, then set the wafer together with the ring frame on a dicer (dicing saw), and dice it to divide it into chips such as IC I am trying to do it. In the bonding of the wafer and the dicing tape, when the wafer is bonded to the dicing tape, air is likely to enter between the wafer and the dicing tape to cause air bubbles (air accumulation). Therefore, a wafer bonding apparatus has been proposed which eliminates air bubbles introduced between the wafer and the dicing tape when bonding the wafer and the dicing tape, which can be known, for example, in Patent Document 3.

  In a wafer bonding apparatus known in Patent Document 3, a wafer coated with an adhesive is placed on a mount plate, and the wafer is introduced with a pressurized fluid, and a resilient hollow pad whose center protrudes downward. When the pad is in contact with the entire surface of the wafer, the pressurized fluid in the pad is made to flow out, and instead the guide plate is brought into contact with the back surface to press the wafer. is there. In this wafer bonding apparatus, when the pad is pressed, the air between the wafer and the mounting plate is gradually discharged from the periphery of the wafer to eliminate air bubbles.

Unexamined-Japanese-Patent No. 2007-27562. JP-A-9-148275. Patent No. 3947989 gazette.

  The technique disclosed in Patent Document 2 divides a large-diameter wafer into four or more smaller pieces so that the dividing process can be performed with a small-diameter dicer. However, such a method requires at least one large-diameter dicer that divides a large-diameter wafer into four or more. For this reason, in order to divide and process a large diameter wafer, it is necessary to prepare a dicer corresponding to the large diameter, and there is a problem of cost and time.

  Also, when setting a wafer in a dicer, mount the wafer on a ring frame to which a dicing tape is attached, then set the wafer together with the ring frame on a dicer (dicing saw), and dice it into chips such as ICs. It is like that.

  Therefore, also in the case of the technique disclosed in Patent Document 2, when the wafer is attached to the dicing tape, air is easily intruded between the wafer and the dicing tape to cause air bubbles, and there is a concern about the influence on the quality at dicing. . In this case, it is also conceivable to eliminate air bubbles using the wafer bonding method known from Patent Document 3. However, according to the wafer bonding method known in Patent Document 3, when the wafer has a shape close to a disk, the air between the wafer and the mounting plate is made to the outside when the hollow pad is placed approximately at the center of the wafer and pressed. It can be discharged. However, in the case where a large-diameter wafer is divided into a plurality of pieces and divided into small pieces, the size and shape of the wafer are variously different. Therefore, unlike the disk wafer, the wafer center is not accurately determined, and the need for alignment arises with the wafer center in mind. As a result, there is a problem that it may not be possible to cope with wafers that are not circular.

  Therefore, when affixing the wafer to the dicing tape, the air bubbles entering between the wafer and the dicing tape are eliminated without being affected by the processing conditions such as the shape and size of the wafer, and the wafer is closely attached on the dicing tape The technical problem to be solved in order to provide a semiconductor manufacturing apparatus and a method of manufacturing a semiconductor which can be mounted well arises, and the present invention aims to solve this problem.

The present invention has been proposed to achieve the above object, and the invention according to claim 1 is characterized in that a wafer obtained by applying a back grinding tape on the surface side is placed on a ring frame to which a dicing tape is attached. in the semiconductor manufacturing apparatus for mounting, gradually bulge by the introduction of air, pushing slowly to the wafer the dicing tape by its bulge, a balloon mounted by bonding the wafer with the dicing tape, toward the front Symbol balloon The wafer is movably provided , and the wafer fragmented and the fragmented wafers are individually mounted without releasing the holding of the wafer, and the balloon gradually presses the dicing tape against the wafer. Holding means for pressing the wafer against the dicing tape and To provide a semiconductor manufacturing apparatus comprising a.

  According to this configuration, the introduction of air inflates the balloon, and the balloon is pressed against the wafer through the dicing tape. Then, by pressing the balloon, a dicing tape is attached to the back surface of the wafer, and the wafer can be mounted on the ring frame. Here, the balloon is gradually inflated while introducing air, and the balloon is brought into contact with the wafer through the dicing tape according to the inflation condition. Therefore, while air between the wafer and the dicing tape is discharged from the contact position, the dicing tape and the wafer are gradually brought into close contact with each other, and the wafer is mounted on the ring frame without any air pool. In such a configuration, the dicing tape does not have to be attached from the center of the wafer. Further, even if the shape of the wafer is not a disk, for example, a fan or the like, even if the shape, size, etc. are different, it can be flexibly handled. Incidentally, in the structure in which the pad protruding in the center is pressed as is known in the above-mentioned Patent Document 3, it is necessary to be aware of the center of the wafer and the alignment needs to be performed. I can not cope.

  The invention according to claim 2 provides a semiconductor manufacturing apparatus according to claim 1, wherein the wafer is disposed on the upper side with the dicing tape interposed, and the balloon is disposed on the lower side.

  According to this configuration, since the balloon is shrunk when air is removed and is automatically separated from the dicing tape, the release operation of the pressing force is simplified, and the apparatus can be simplified.

The invention according to claim 3 is a method of manufacturing a semiconductor in which a wafer is mounted on a ring frame to which a dicing tape is attached, wherein a balloon, into which air is introduced and gradually inflated, is passed over the dicing tape with respect to the wafer. And holding the wafer against the wafer while pressing the dicing tape toward the wafer as the balloon bulges, and the holding means holds the wafer, and the holding means does not release the wafer after the wafer is shredded. Are moved toward the balloon to press the wafer against the dicing tape, and the dicing tape and the wafer are attached to each other to individually mount the shredded wafers .

  According to this method, while the air is introduced to gradually inflate the balloon, the balloon is pressed through the dicing tape toward the approximate center (center) of the back surface of the wafer. Then, by pressing the balloon, a dicing tape is attached to the back surface of the wafer, and the wafer can be mounted on the ring frame. Then, at the time of affixing, while air between the wafer and the dicing tape is discharged from the contact position, the dicing tape and the wafer are gradually brought into close contact with each other, and there is no air accumulation between them. Mounted. Thus, in such a method, the dicing tape does not have to be stuck from the center of the wafer. Further, even if the shape of the wafer is not a disk, for example, a fan or the like, even if the shape, size, etc. are different, it can be flexibly handled.

The invention according to claim 4 is a semiconductor manufacturing in which the wafer is disposed on the upper side with the dicing tape in between, the balloon is inflated from the lower side of the dicing tape, and the dicing tape is pressed against the wafer. Provide a way.

  According to this method, according to this configuration, when the air of the balloon is removed, it is shrunk and is automatically separated from the dicing tape, thereby simplifying the release operation of the pressing force.

  In the present invention, when the wafer is attached to the dicing tape, the air bubble is gradually inflated while introducing the air, so that the air bubble entering between the wafer and the dicing tape is eliminated and the wafer and the dicing tape are brought into close contact. The wafers can be easily mounted on the ring frame by bonding. Furthermore, even if the diameter of the wafer is increased, the shape can be flexibly coped with even if the shape is not disk-like, for example, fan-shaped, or the shape, size, etc. are different. Further, the thermocompression bonding tape is adhered to the back grinding tape to integrate at least a part of the back grinding tape and the thermo compression tape, and then, when the thermo compression tape is to be peeled off, the operation to peel off the compression tape At the same time, since the back grinding tape can also be peeled from the wafer, improvement in workability can be expected.

BRIEF DESCRIPTION OF THE DRAWINGS The schematic block diagram of the semiconductor manufacturing apparatus in embodiment of this invention. FIG. 5 is a diagram for explaining the implementation procedure of the semiconductor manufacturing method according to the embodiment of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS The figure explaining schematic structure of the back grinding apparatus of the semiconductor manufacturing apparatus in embodiment of this invention, and a wafer conveyance means. FIG. 2 is a view for explaining the schematic configuration of an alignment unit of a semiconductor manufacturing apparatus according to an embodiment of the present invention. It is a figure explaining processing of the tape parting line by the laser unit of the semiconductor manufacturing apparatus in embodiment of this invention, (a) is the side view, (b) is the top view. It is a figure explaining the process of the division line for wafer cuts by the laser unit of the semiconductor manufacturing apparatus in embodiment of this invention, (a) is the side view, (b) is the top view. It is a figure explaining the structure of the separate table of the semiconductor manufacturing apparatus in embodiment of this invention, (a) is the side view, (b) is the top view. It is a figure explaining how to divide the wafer using the separation table of the semiconductor manufacturing apparatus in the embodiment of the present invention, (a) is a side view before division, (b) is a side view at the time of division, (c) is Explanatory drawing in the case of dividing a wafer into halves along an X-axis, (d) is explanatory drawing in the case of dividing a wafer into quarter along a Y-axis. The figure explaining the structure of the separate table of the semiconductor manufacturing apparatus in embodiment of this invention. It is a figure explaining the structure of the separate table of the semiconductor manufacturing apparatus in embodiment of this invention, (a) is a figure which shows the state which the separate table has faced the upper side, (b) has the separate table face downward. The figure which shows a state, (c) demonstrates the operation | movement of a division | segmentation separate table. FIG. 6 is a view for explaining a state in which a ring frame is arranged in the wafer mounting unit of the semiconductor manufacturing apparatus according to the embodiment of the present invention. FIG. 5 is a view for explaining a structure in which a dicing tape is pressed against a wafer by a balloon in a wafer mounting unit of a semiconductor manufacturing apparatus according to an embodiment of the present invention. FIG. 5 is a view for explaining the configuration and operation of a back grinding tape peeling section of a semiconductor manufacturing apparatus according to an embodiment of the present invention. The figure which demonstrates the state in which a ring frame is accommodated in the frame carrier of the semiconductor manufacturing apparatus in embodiment of this invention. FIG. 6 is a view for explaining a state in which a fragmented wafer is mounted on a ring frame in an embodiment of the present invention, and (a) to (d) show a state in which different fragmented wafers are mounted The figure, (e) shows the wafer before being fragmented.

The present invention is to provide a method of manufacturing a semiconductor capable of eliminating the air bubbles entering between the wafer and the dicing tape when attaching the wafer to the dicing tape, and closely mounting the ring frame on the dicing tape for accurate mounting. In order to achieve the purpose, in the semiconductor manufacturing method of mounting a wafer on a ring frame to which a dicing tape is attached, air is introduced in the semiconductor manufacturing method of mounting a wafer on a ring frame to which a dicing tape is attached. the balloon is inflated progressively been, placed in the dicing tape over to the wafer, the dicing tape by accompanied by inflation of the balloon is holding means for holding the wafer with pressing towards said wafer Fragment the wafer Said holding means is moved toward the balloon pressed against the wafer to the dicing tape, the wafer is the small pieces by bonding the said wafer and said dicing tape without releasing the holding of the wafer after It was realized by mounting individually .

In addition, according to the present invention, when the wafer is attached to the dicing tape, air bubbles introduced between the wafer and the dicing tape are eliminated without being affected by processing conditions such as the shape and size of the wafer, and the dicing tape on the ring frame is In order to achieve the purpose of providing a semiconductor manufacturing apparatus that can be closely attached and mounted with high accuracy, a wafer formed by attaching a back grinding tape on the front side is mounted on a ring frame to which a dicing tape is attached. In the semiconductor manufacturing apparatus, in the semiconductor manufacturing apparatus in which a wafer having a back grinding tape attached to the surface side is mounted on a ring frame to which a dicing tape is attached, air is gradually introduced by the introduction of air, and the above expansion The dicing tape is Gradually pressed against the Doha, the dicing tape and a balloon mounted by bonding the wafer, movably provided toward the front Symbol balloon, small pieces and the said wafer without release the holding of the wafer The small pieces of each wafer are individually mounted, and the balloon includes holding means for pressing the wafer against the dicing tape as the dicing tape is gradually pressed against the wafer.

  Hereinafter, an embodiment of the present invention will be described in detail on the basis of a preferred embodiment shown in the attached drawings.

  1 to 15 show an embodiment of a semiconductor manufacturing apparatus according to the present invention, and FIG. 1 is a schematic block diagram of the semiconductor manufacturing apparatus, FIG. 2 is a manufacturing process diagram, and FIGS. It is explanatory drawing for demonstrating the structure of each process part in, and a processing method.

  As shown in FIG. 1, the semiconductor manufacturing apparatus 10 includes a control unit 11, a back grinding apparatus 12, an alignment unit 13, a laser irradiation unit 14, a wafer dividing unit 15, a wafer reverse holding unit 16, and a ring. A frame disposing unit 17, a wafer mounting unit 18, a back grinding tape peeling unit 19, a wafer transfer unit 21, and a frame carrier 22 are provided.

  The control unit 11 is, for example, a computer having a central processing function of the semiconductor manufacturing apparatus 10 and performs various types of processing. In addition, the control unit 11 is provided with a memory 111 in which various processing programs are stored.

  The wafer transfer means 21 includes a transfer chuck 211 for vacuum suctioning and holding the back surface of the wafer W and transferring the wafer W sequentially to each processing unit, as shown in FIGS. 3 to 11. . The transport chuck 211 is provided with a large number of suction holes throughout the suction surface, and the entire surface of the wafer W is held by vacuum suction through the large number of holes, thereby correcting warpage of the wafer W and making it flat. It has a function to keep the degree at 5 μm or less. In the wafer W, an extensible (stretchable) back grinding tape GT made of resin tape or the like is attached to the surface (main surface), and the main surface is protected.

  The back grinding apparatus 12 has a vacuum chuck table 121 for holding the wafer W as shown in FIG. In the back grinding apparatus 12, the main surface side of the wafer W in the back grinding apparatus 12 is placed downward on the vacuum chuck table 121, and the wafer W is held by the vacuum chuck table 121. , And can be thinned by grinding the back side.

  The alignment unit 13 has an alignment unit (for example, alignment camera) 131 as shown in FIG. The alignment unit 13 finishes grinding in the back grinding apparatus 12, and is chucked by the transport chuck 211 from the back grinding apparatus 12, and the wafer W taken out with the main surface facing downward. The alignment is performed by the alignment unit 131 over the back grinding tape GT. The alignment unit 131 is movable in the X-X direction and the Y-Y direction substantially parallel to the wafer W. The alignment is, for example, the center position of the wafer W, theta direction, the scribe line, the cut position, etc. The alignment uses a general method, for example, the center position alignment from outer shape recognition, two points Perform scribe line / cut position alignment of

  The said laser irradiation part 14 has the laser unit 141 as a laser irradiation means, as shown in FIG.5 and FIG.6. The laser unit 141 is formed so as to be able to irradiate a laser toward the main surface of the wafer W from an irradiation port disposed below the main surface of the wafer W. That is, the main surface of the wafer W is taken out by the transfer chuck 211 downward, and the main surface of the wafer W is set so as to direct the main surface downward. Therefore, in this case, the process can be efficiently carried out without inserting the reversing operation of the wafer W, and the worker is forced to take an unreasonable posture even when the cleaning operation of the laser irradiation port in the laser unit 141 is performed. It allows workers to easily carry it out in a natural position. Further, for example, a measure to reduce the number of cleanings by providing a blow or the like can be easily introduced. Then, in the laser irradiation here, first, as shown in FIG. 5, a laser with a short wavelength of about 266 nm is irradiated toward the back grinding tape GT attached to the main surface of the wafer W. The tape dividing lines L1X and L1Y are formed on the main surface of the wafer W. Subsequently, as shown in FIG. 6, a laser with a short wavelength of about 266 nm is irradiated to the main surface of the wafer W along the tape division lines L1X and L1Y, and the depth of the wafer W is 5 to 5 nm. Processing is performed in two steps so as to provide wafer cutting division lines L2X and L2Y in which a modified layer of about 50 μm is formed in a V-groove shape.

  As described above, when the laser beam having a wavelength of about 266 nm is irradiated toward the back grinding tape GT first, the back grinding tape GT is less affected by the heat, and the wafer W is not melted at the same time. Then, only the back grinding tape GT can be separated. In addition, after the backgrinding tape GT is divided, a gap is formed in the tape division lines L1X and L1Y, and the main surface of the wafer W corresponding to the tape division lines L1X and L1Y of the back grinding tape GT is a wafer The back grinding tape GT is substantially removed from the main surface of W, and the main surface of wafer W is exposed. Therefore, when the laser is irradiated along the tape dividing lines L1X and L1Y, the main surface of the wafer W is irradiated with the laser of substantially the same strength into the wafer W without being affected by the back grinding tape GT. Inside the W, a modified layer having a substantially uniform brittleness is formed as wafer cutting division lines L2X and L2Y, for example, over a depth of about 5 to 50 μm from the surface layer. This enables accurate breaking of the wafer W.

  More specifically, the laser unit 141 is movable in parallel with the wafer W in the XX direction and the YY direction. Then, in the present embodiment, as shown in FIG. 5B, the laser is crossed in the XX direction and the YY direction so as to divide the wafer W into four equal parts with respect to the back grinding tape GT. The back grinding tape GT is divided into four by respectively providing the tape dividing line L1X and the tape dividing line L1Y intersecting with the tape dividing line L1X at right angles to the back grinding tape GT. It can be done. Further, as shown in FIG. 6B, the laser is irradiated in a cross shape in the XX direction and the YY direction along the tape division lines L1X and L1Y formed by the division of the back grinding tape GT. Then, the wafer cutting division line L2X and the wafer W cutting division line L2Y orthogonal to the wafer W cutting division line L2X can be provided inside the wafer W, respectively.

In the present embodiment, the reason for performing cutting using a laser instead of cutting with a blade in the process of cutting the wafer W is as follows (1) to (3) and the like.
(1) Since the processing unit of the laser is very small, it is possible to process the back grinding tape GT and the wafer W efficiently. On the other hand, since the blade simultaneously cuts the back grinding tape GT and the wafer W, there is a concern about the influence on the quality.
(2) The laser is less susceptible to the limitations of the processing environment because it can be dry processed. On the other hand, since the blade needs water, it is necessary to prepare an environment (function) to use water.
(3) The blade needs to be selected in accordance with the object to be processed, and it takes time and effort, but since the laser can change the output etc. by the parameter, the time and effort can be saved.

  As shown in FIGS. 7 to 10, the wafer dividing unit 15 is a separate provided with four divided separate table units 151a, 151b, 151c, and 151d respectively corresponding to the four equally divided parts of the wafer W. It has a table 151. The divided separation table portions 151a to 151d are each independently capable of vacuum-sucking the wafer W, and one side lower or upper side with respect to another adjacent separated separation table portion. For example, “inclination operation mechanism 153” which allows it to be moved by about 5 to 10 mm and bent in a mountain shape or a valley shape and made to tilt between adjacent divided separate table portions, and with respect to other adjacent separated separate table portions As shown in (c) of FIG. 10, "X / Y axis operation mechanism 154" which enables movement of about 5 to 10 mm in the X and Y axis directions (left and right, front and back direction), and other adjacent separated separates It has a "Z-axis operation mechanism 155" which can move about 5-10 mm in the Z-axis direction (vertical direction) with respect to the table. The movable movement of the tilt movement mechanism 153, the X / Y axis movement mechanism 154, and the Z axis movement mechanism 155 uses, for example, a reciprocating feeding operation by a ball screw or a reciprocating feeding operation by an air cylinder. FIG. 10C shows a state in which each of the divided separate table units 151a to 151d can move back and forth in the X and Y directions.

  Further, in FIG. 10, in each divided separate table portion 151a, 151b, 151c, 151d, the shaft 156a is fixed in position in the Z-axis direction (vertical direction), and the shafts 156b, 156c are movable in the Z-axis direction. . Then, when the shafts 156b and 156c move independently in the Z-axis direction, the divided separate table portions 151a to 151d can be tilted or moved in the vertical direction, respectively, and can be bent and inclined in the chevron or valley shape.

  If the configuration of the separate table 151 is described in further detail, as shown in (c) and (d) of FIG. 8, the wafer cutting division lines L2X and L2Y are formed on the separate table 151 by the laser unit 141. The center of the wafer W is aligned with the center of the separate table 151, and the wafer cutting dividing lines L2X and L2Y are aligned with the bending lines 151X and 151Y, respectively, and vacuum suction is performed by the suction mechanism 152. Then, the wafer W can be held on the separate table 151.

Further, in a state where the wafer W is set on the separate table 151, the inclination operation mechanism 153 is driven to one side (or both sides) of the divided separate table portions 151c and 151d as shown in (b) of FIG. The wafer W is cut as shown in FIG. 8C when it is bent in a mountain shape by being inclined, for example, by about 5 to 10 mm in the Z-axis direction (up or down) with respect to the adjacent divided separate table portions 151a and 151b. It can be cut along the dividing line 151X and divided into two wafer halves WA and WB. Furthermore, the tilt operation mechanism 153 is driven in the same fixed set state, and as shown in (b) of FIG. 8 as well, one side (or both sides) of the divided separate table units 151a and 151d are adjacent to each other. When the wafer W is inclined by, for example, about 5 to 10 mm in the Z-axis direction (up or down) with respect to the table parts 151b and 151c, the wafer W is cut along the wafer cutting parting line 151Y shown in FIG. Thus, the wafer W can be divided into four small wafers Wa, Wb, Wc, and Wd.

  The wafer turning and holding means 16 is provided in the wafer dividing unit 15 as shown in FIG. 10, and the separation table 151 holding the fragmented wafers Wa, Wb, Wc and Wd is 180 °. It has a rotating shaft 161 which can be turned over and a motor 162 (see FIG. 1) which can drive the rotating shaft 161.

  Then, as shown in FIGS. 9 and 10, the wafer reverse holding means 16 reverses the separation table 151 180 ° from the state of FIG. 10A together with the wafers Wa, Wb, Wc, and Wd which have been fragmented. It controls so that it may be in the state of 9 and (b) of FIG. That is, in the state shown in FIG. 9 and FIG. 10B, the main surface to which the back grinding tape GT is attached is directed to the upper side, and the back surface is directed to the lower side. Wc and Wd are held in the separate table 151.

  The ring frame arranging means 17 has a frame-like ring frame (also referred to as a “wafer frame”) 171 to which a dicing tape DT, which is an adhesive tape for holding a wafer W, is attached as shown in FIG. . The inner diameter of the ring frame 171 is set to be smaller than the outer diameter of the wafer W before being fragmented and larger than the outer diameters of the fragmented wafers Wa, Wb, Wc, and Wd. Then, the small-sized wafers Wa, Wb, Wc, and Wd can be attached and set on the dicing tape DT attached to the ring frame 171. More specifically, the ring frame 171 here is a ring frame for an outer diameter of 300 mm of the wafer W, for example, and has an inner diameter of 350 mm, and the outer diameter of the wafer W before being fragmented is 450 mm. Therefore, the ring frame 171 for an outer diameter of 300 mm can not use the wafer W with an outer diameter of 450 mm as it is. However, since the wafer W having an outer diameter of 450 mm is already divided into four pieces, the ring frame 171 for an outer diameter of 300 mm can be used even in the case of the wafer W of 450 mm.

  Then, as shown in FIG. 11, the ring frame disposing means 17 places the ring frame 171 to which the dicing tape DT is attached to the area of the wafer Wa, Wb, Wc, Wd which has been cut into small pieces. The centers of the selected wafers Wa, Wb, Wc, and Wd substantially coincide with each other and can be sequentially moved.

  As shown in FIG. 12, the wafer mounting means 18 has a balloon 181 disposed in a state of being expanded below the dicing tape DT of the ring frame 171 (or after being expanded from the rear). The balloon 181 is formed as a flexible bag made of silicone rubber or the like, into which air is inserted to be bulging. Then, the balloon 181 is sequentially moved down to any one of the wafers Wa, Wb, Wc, and Wd which are fragmented together with the ring frame 171 in the ring frame arrangement means 17, and then air is introduced and gradually In order to be pushed up through the dicing tape DT, the dicing tape DT is gradually pushed up along with the swelling and the corresponding fragmented wafers Wa, Wb, Wc, Wd are respectively pushed up through the dicing tape DT. It has become. In addition, one of the small wafers Wa, Wb, Wc, and Wd is attached to the dicing tape DT by pressing with the dicing tape DT by the adhesive force of the dicing tape DT, and the dicing is performed on the ring frame 171. One of the wafers Wa, Wb, Wc and Wd can be mounted. When the dicing tape DT is pressed onto any one of the small-sized wafers Wa, Wb, Wc, and Wd, pressure is also applied from the wafer W side in order to affix more reliably.

  Here, when the balloon 181 introduced with air is gradually pressed against the undersurface (rear surface) of the small-piece wafers Wa, Wb, Wc, Wd via the dicing tape DT, the balloon 181 is expanded. The contact of the balloon 181 with the dicing tape DT is in contact with the outside of the dicing tape DT so as to gradually spread outward from the position of the center. Therefore, the dicing tape DT in contact with the lower surface (back surface) of the fragmented wafer (any one of Wa, Wb, Wc, Wd) is also one of the fragmented wafers (Wa, Wb, Wc, Wd) 1) contact to gradually spread outward from the center position (center). As a result, the air between the dicing tape DT and the fragmented wafer (one of Wa, Wb, Wc, and Wd) is pushed outward with the contact. Then, the fragmented wafer (one of Wa, Wb, Wc, and Wd) is in intimate contact with the dicing tape DT without air being interposed between them, and is securely held on the ring frame 171 by adhesion. Will be mounted in the In addition, the ring frame 171 mounting the wafer (one of Wa, Wb, Wc, and Wd) which has been fragmented in this manner is conveyed to the back grinding tape peeling section 19 by the wafer conveyance means 21. It is supposed to be. On the other hand, the balloon 118 which finished bonding of the dicing tape DT with the wafer (one of Wa, Wb, Wc, Wd) which is gradually pushed up and divided into small pieces of dicing tape DT is introduced into the inside thereof. When the air is removed, it immediately shrinks downward and separates from the dicing tape DT.

  As shown in FIG. 13, the back grinding tape peeling section 19 has been mounted on the small wafer (one of Wa, Wb, Wc and Wd) and is transported by the wafer transport means 21. A suction stage 191 for vacuum suction holding and positioning of the ring frame 171, and a fragmented wafer (Wa, Wb, Wc, Wd) on the ring frame 171 held by suction on the suction stage 191 And a back grinding tape peeling means 192 for sticking the peeling tape RT onto the back grinding tape GT stuck to the main surface of the one) and lifting and peeling the back grinding tape GT together with the peeling tape RT. It is provided. Then, the ring frame 171 mounted with the wafer (any one of Wa, Wb, Wc, Wd) from which the back grinding tape GT has been peeled off in this manner is transported to the frame carrier 22 by the wafer transport means 21. , And are stored in the frame carrier 22.

  The frame carrier 22 is a ring frame 171 mounted on the wafer (one of Wa, Wb, Wc, and Wd) which has been transported by the wafer transport means 21 and from which the back grinding tape GT has been peeled off, It has a plurality of shelves 221 each of which is stored and stored.

  FIG. 2 is a process chart showing an example of the processing procedure in the semiconductor manufacturing apparatus 10 described above. An example of the processing procedure in the semiconductor manufacturing apparatus 10 will now be described with reference to FIGS. 1 and 3 to 14 in accordance with the process chart shown in FIG.

  In the process diagram shown in FIG. 2, the wafer W having an outer diameter of 450 mm which has been ground by the back grinding device 12 is taken out from the back grinding device 12 and a ring frame 171 having an inner diameter 350 mm smaller than the outer diameter of the wafer W. Shows the process for mounting on. Moreover, if the process is divided roughly into processing order, alignment process (A), ablation processing process (B), wafer cut line formation process (C), wafer division process (D), wafer reverse process (E), wafer mounting process (F), the back grinding tape peeling step (G) is in order. In this example, a wafer W having an outer diameter of 450 mm is mounted on a ring frame 171 having an inner diameter of 350 mm, which is smaller than the outer diameter of the wafer W, to be treated. However, the present invention can be applied to the case where a wafer W having a large outer diameter is mounted on a ring frame 171 having a small inner diameter to enable dicing.

  Then, first, in the alignment step (A), as shown in FIG. 3, in the back grinding apparatus 12, with the back grinding tape GT attached to the main surface (front surface) side, the grinding on the back surface side is finished. The thinned wafer W is vacuum suction-held on the entire back surface by the transfer chuck 211 of the wafer transfer means 21 and taken out from the back grinding apparatus 12. The wafer W here is taken out with the main surface side to which the back grinding tape GT is attached facing downward. Further, at this time, the entire back surface of the wafer W is vacuum-sucked by the transfer chuck 211, whereby the warp of the wafer W is corrected and flattened. Further, as shown in FIG. 4, the alignment unit (alignment camera) 131 is directed from the lower side to the main surface of the wafer W held and flattened by the transfer chuck 211, and the wafer W is passed through the back grinding tape GT. Perform alignment.

  In the alignment step (A), when the visibility of the backgrinding tape GT is poor and alignment through the backgrinding tape GT is impossible, the wafer W after grinding is transferred Before suction by the chuck 211, for example, an infrared camera is used to image the ground surface (polished surface) to perform alignment, and the data is stored in the memory 111. Then, after alignment, the wafer W can be adsorbed by the transfer chuck 211 and transferred to the next process, and the wafer W can be changed to a means for reading out alignment data at the time of separate use.

  In the ablation processing step (B), as shown in FIG. 5, from the lower side of the wafer W toward the surface not adsorbed to the transport chuck 211, that is, to the main surface side to which the back grinding tape GT is attached, A laser with a wavelength of 266 nm is irradiated from an irradiation port (not shown) facing the upper side of the laser unit 141 disposed below the wafer W, and only the portion of the back grinding tape GT irradiated with the laser is melted. Perform ablation processing to cut. In this abrasion processing, the laser is cross-shaped in the XX direction and the YY direction with respect to the back grinding tape GT so as to divide the wafer W into four equal parts based on the position aligned in the alignment step (A). As shown in FIG. 5B, the backgrinding tape GT is provided with a tape dividing line L1X and a tape dividing line L1Y which intersects the tape dividing line L1X at a right angle. Further, in the portion where the tape dividing lines L1X and L1Y are provided, a gap is created by the formation of the tape dividing lines L1X and L1Y.

  In the wafer cut line forming step (C), as shown in FIG. 6, as in the case of the ablation processing step (B), the illustration facing the upper side of the laser unit 141 disposed below the wafer W A laser with a wavelength of 266 nm is irradiated in a cross shape along the tape dividing line L1X and the tape dividing line L1Y toward the main surface side of the wafer W from the lower side of the wafer W, ie A wafer that intersects at right angles with the wafer cutting parting line L2X and the wafer W cutting parting line L2X formed of a V-shaped modified layer having a depth of about 5 to 50 μm in the main surface side of W The W cut dividing line L2Y is provided in a cross shape as shown in (b) of FIG.

  In addition, the wafer W which has finished the processing in the ablation processing step (B) and the wafer cut line forming step (C) is held by the transfer chuck 211 as shown in FIG. 7A. The wafer is conveyed to the dividing step (D) and conveyed onto the separation table 151 of the wafer dividing unit 15. Then, as shown in FIG. 8A, the wafer W transferred to the wafer dividing step (D) has the main surface side (back grinding tape GT side) facing downward, that is, the back grinding tape The center of the wafer W is aligned with the center of the wafer dividing portion 15 with the back side not attached above facing up, and as shown in (c) and (d) in FIG. The division lines L2X and L2Y are combined and arranged on the separation table 151.

  In the wafer dividing step (D), the wafer W placed on the separate table 151 is held by vacuum suction of the suction mechanism 152. Next, the tilt operation mechanism 153 is driven to cause one side of the split separation table units 151a and 151b to be adjacent to the split separation table units 151c and 151d as shown in (b) and (c) of FIG. For example, it is bent in a mountain shape by being inclined by about 5 to 10 mm in the Z-axis direction (upward direction). By this bending, the wafer W is cut along the wafer cutting dividing line 151X and is divided into two wafer halves WA and WB. Further, similarly, the tilt operation mechanism 153 is driven in the fixed set state, and as shown in (b) and (d) of FIG. 8, a divided separation table in which one side of the divided separation table units 151a and 151d is adjacent. For example, it is bent by about 5 to 10 mm in the Z-axis direction (upward direction) with respect to the portions 151 b and 151 c. By this bending, the wafer W is further cut along the wafer cutting dividing line 151Y, and is divided into four small-piece wafers Wa, Wb, Wc, and Wd.

  When the wafer division in the wafer division step (D) is completed, the process proceeds to a wafer reverse step (E). In the wafer dividing step (D), the motor 162 is driven to rotate the rotating shaft 161 by 180 °. Due to the rotation of the rotation shaft 161, the separation table 151 holding the small pieces of wafers Wa, Wb, Wc, and Wd by vacuum suction rotates with the rotation shaft 161 by 180 °, as shown in FIGS. Turn over 180 ° as shown in). In addition, the four small-piece wafers Wa, Wb, Wc, and Wd held by suction on the separate table 151 are turned over on the main surface side (back grinding tape GT side) by turning over the separate table 151. The back side is held downward. Thereafter, the process proceeds to a wafer mounting process (F).

  In the wafer mounting step (F), as shown in FIG. 11, the four small wafers (Wa, Wb, Wc, Wd) are turned over in the wafer turning step (E) and held by the separation table 151. The ring frame 171 on which the dicing tape DT is stretched is moved to the lower side of any one of the wafers. The ring frame 171 here has an inner diameter of 3500 mm, but is larger than the maximum outer diameter of the wafer (Wa, Wb, Wc, Wd) already divided into four. Further, in the following description, the wafers (Wa, Wb, Wc, Wd) selected for simplification will be described as the wafer Wd. Then, the center of the ring frame 171 is made to substantially coincide with the center of the selected wafer Wd.

  Almost simultaneously, as shown in FIG. 12, the balloon 181 is disposed below the ring frame 171, air is introduced into the balloon 181, and the balloon 181 is gradually inflated. In conjunction with the expansion of the balloon 181, the balloon 181 gradually pushes up the dicing tape DT, and the balloon 181 is gradually pressed to the lower surface (rear surface) of the selected wafer Wd through the dicing tape DT. Then, by pressing the balloon 181 through the dicing tape DT, the back surface of the selected wafer Wd is attached onto the dicing tape DT by the adhesive force of the dicing tape dT, and the wafer Wd has the main surface up. And mounted on the ring frame 171. Also, when mounting is completed, the air introduced into the inside of the balloon 118 is removed, and the balloon 118 instantly shrinks downward and leaves the dicing tape DT. Further, the vacuum suction to the wafer Wd by the divided separate table unit 151a corresponding to the wafer Wd mounted on the ring frame 171 is released. Then, the selected wafer Wd is transferred by the transfer of the wafer transfer means 21 together with the ring frame 171 to the back grinding tape peeling step (G).

  In the back grinding tape peeling step (G), the wafer Wd is mounted and the ring frame 171 transferred from the wafer mounting step (F) is placed on the suction stage. Then, as shown in FIG. 13, the lower surface of the dicing tape DT is vacuum suctioned and held by the suction stage 191. Thereafter, the peeling tape RT is stuck by the back grinding tape peeling means 192 onto the back grinding tape GT which is stuck to the main surface of the ring frame 171. Thereafter, the back grinding tape GT is lifted together with the peeling tape RT and peeled from the wafer Wd. When the back grinding tape GT is peeled off, the ring frame 171 is released from suction and holding by the suction stage 191 and is further transferred to the frame carrier 22 by the wafer transfer means 21. The frame carrier 22 is stored and stored in the shelf 221 as shown in FIG. Thus, a series of processing operations are completed. Then, the remaining fragmented wafers (Wa, Wb, Wc) are processed in the same manner, stored in the frame carrier 22 and stored.

  FIG. 15 shows a state in which the wafers (Wa, Wb, Wc, Wd) thus divided into small pieces are mounted on the ring frame 171. That is, (a) in FIG. 15 shows a state in which the fragmented wafer Wa is mounted on the ring frame 171, (b) shows a state in which the fragmented wafer Wb is mounted on the ring frame 171, (c) The small wafer Wc is mounted on the ring frame 171, the small wafer Wd is mounted on the ring frame 171, and (e) is the wafer W before small wafer Is shown.

  As described above, according to the configuration of the above embodiment, the back surface approximate center (center of the wafer (Wa, Wb, Wc, Wd) in which the balloon 181 is inflated and the balloon 181 is fragmented through the dicing tape DT When pressed, the dicing tape DT is stuck in close contact with the back surface of the fragmented wafer (Wa, Wb, Wc, Wd) by pressing the balloon 181, and it is easy without air bubbles being created between The wafers (Wa, Wb, Wc, Wd) can be mounted on the ring frame 171 with high accuracy. Further, in this mounting method, the dicing tape DT does not have to be attached from the center of the wafer (Wa, Wb, Wc, Wd), so the shape of the wafer is not disk-like. Even if they are different, they can respond flexibly.

  Furthermore, in the above embodiment, the case where the wafer W having an outer diameter of 400 mm is equally divided into four and mounted on the ring frame 171 for 300 mm is described. Then, the wafer may be divided into small pieces having an outer diameter smaller than 300 mm.

  Furthermore, the present invention can be modified in various ways without departing from the spirit of the present invention, and it is natural that the present invention extends to those modified. For example, in the above embodiment, the case of mounting the divided and fragmented wafer on the ring frame has been described, but the present invention is also applied to the case of mounting the non-segmented wafer on the ring frame.

DESCRIPTION OF SYMBOLS 10 Semiconductor manufacturing apparatus 11 Control part 111 Memory 12 Back grinding apparatus 121 Vacuum chuck table 13 Alignment part 131 Alignment unit 14 Laser irradiation part 141 Laser unit (laser irradiation means)
15 Wafer Divider 151 Separate Table 151a-151d Divided Separate Table 151X Folded Line 151Y Folded Line 152 Adsorption Mechanism 153 Tilting Mechanism 154 X / Y Axis Operating Mechanism 155 Z Axis Operating Mechanism 16 Wafer Reverse Holding Means 161 Rotating Shaft 162 Motor 17 Ring frame arranging means 171 Ring frame 18 Wafer mounting means 181 Balloon 19 back grinding tape peeling section 191 suction stage 192 back grinding tape peeling means 21 wafer conveyance means 211 conveyance chuck 22 frame carrier 221 shelf DT dicing tape GT back grinding tape RT peeling tape W wafer WA, WB wafer half Wa, Wb, Wc, Wd fragmented wafer 151X 151Y fold line L2X, L2Y wafer cut for dividing line L1X, L1Y tape cut line

Claims (4)

In a semiconductor manufacturing apparatus, in which a wafer obtained by attaching a back grinding tape to the front side is mounted on a ring frame to which a dicing tape is attached,
A balloon which is gradually expanded by the introduction of air, and the expansion causes the dicing tape to be gradually pressed against the wafer, and the dicing tape and the wafer are bonded and mounted;
Is movable toward the front Symbol balloon mounted individually each wafer that was cut into small pieces and the pieces of the wafer without release the holding of the wafer, the balloon is the dicing tape to the wafer Holding means for pressing the wafer against the dicing tape as it is gradually pressed;
A semiconductor manufacturing apparatus comprising:   2. The semiconductor manufacturing apparatus according to claim 1, wherein the wafer is disposed on the upper side sandwiching the dicing tape, and the balloon is disposed on the lower side. In a semiconductor manufacturing method for mounting a wafer on a ring frame to which a dicing tape is attached,
A balloon, into which air is introduced and gradually inflated, is placed on the wafer over the dicing tape, and along with the balloon's inflation, the dicing tape is pressed against the wafer and the wafer is held. After holding the wafer into small pieces, the holding means is moved toward the balloon without releasing the holding of the wafer to press the wafer against the dicing tape to bond the dicing tape and the wafer. Separately mount each of the fragmented wafers ,
Method of manufacturing a semiconductor characterized in that. Wherein placing the wafer on the upper sides of the dicing tape, according to the balloon to claim 3, wherein the inflatable from the lower side of the dicing tape so as to press the said dicing tape to the wafer comprising, characterized in that Semiconductor manufacturing method.

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