JP6510922B2 - プラズマ処理装置及びプラズマ処理方法 - Google Patents

プラズマ処理装置及びプラズマ処理方法 Download PDF

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JP6510922B2
JP6510922B2 JP2015144999A JP2015144999A JP6510922B2 JP 6510922 B2 JP6510922 B2 JP 6510922B2 JP 2015144999 A JP2015144999 A JP 2015144999A JP 2015144999 A JP2015144999 A JP 2015144999A JP 6510922 B2 JP6510922 B2 JP 6510922B2
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voltage
value
electrode
resistivity
high frequency
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JP2017028092A (ja
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紀彦 池田
紀彦 池田
荒巻　徹
徹 荒巻
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Hitachi High Tech Corp
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JP2015144999A 2015-07-22 2015-07-22 プラズマ処理装置及びプラズマ処理方法 Active JP6510922B2 (ja)

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Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102841591B1 (ko) * 2019-01-11 2025-08-01 도쿄엘렉트론가부시키가이샤 처리 방법 및 플라즈마 처리 장치
JP7344821B2 (ja) * 2020-03-17 2023-09-14 東京エレクトロン株式会社 プラズマ処理装置
KR102801223B1 (ko) * 2020-11-16 2025-04-30 삼성전자주식회사 플라즈마 공정 챔버
JP7648498B2 (ja) * 2021-10-07 2025-03-18 東京エレクトロン株式会社 制御プログラム、制御方法、及びプラズマ処理装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6577113B2 (en) * 2001-06-06 2003-06-10 Tokyo Electron Limited Apparatus and method for measuring substrate biasing during plasma processing of a substrate
JP5246836B2 (ja) * 2007-01-24 2013-07-24 東京エレクトロン株式会社 プラズマ処理装置用のプロセス性能検査方法及び装置
JP4903610B2 (ja) * 2007-03-27 2012-03-28 東京エレクトロン株式会社 プラズマ処理装置
JP5160802B2 (ja) * 2007-03-27 2013-03-13 東京エレクトロン株式会社 プラズマ処理装置
JP2010080717A (ja) * 2008-09-26 2010-04-08 Tokyo Electron Ltd プラズマ処理装置用の載置台
JP2011228436A (ja) * 2010-04-19 2011-11-10 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法

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