JP6509186B2 - 有機発光ダイオード及びこれを備える有機電界発光表示装置、そして有機発光ダイオードの製造方法 - Google Patents
有機発光ダイオード及びこれを備える有機電界発光表示装置、そして有機発光ダイオードの製造方法 Download PDFInfo
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- JP6509186B2 JP6509186B2 JP2016228775A JP2016228775A JP6509186B2 JP 6509186 B2 JP6509186 B2 JP 6509186B2 JP 2016228775 A JP2016228775 A JP 2016228775A JP 2016228775 A JP2016228775 A JP 2016228775A JP 6509186 B2 JP6509186 B2 JP 6509186B2
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 11
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- 239000010949 copper Substances 0.000 description 9
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- 239000011229 interlayer Substances 0.000 description 8
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- 238000004768 lowest unoccupied molecular orbital Methods 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 239000002356 single layer Substances 0.000 description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- 229910052779 Neodymium Inorganic materials 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 230000027756 respiratory electron transport chain Effects 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000012044 organic layer Substances 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 239000000049 pigment Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920006254 polymer film Polymers 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000005019 vapor deposition process Methods 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/865—Intermediate layers comprising a mixture of materials of the adjoining active layers
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/16—Electron transporting layers
- H10K50/165—Electron transporting layers comprising dopants
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
- H10K50/171—Electron injection layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
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- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
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- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H10K71/15—Deposition of organic active material using liquid deposition, e.g. spin coating characterised by the solvent used
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- H10K2101/00—Properties of the organic materials covered by group H10K85/00
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- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electroluminescent Light Sources (AREA)
Description
ガラス基板上にITOと正孔阻止層(Liq、1nm)を蒸着した後、電子注入物質がドープされた電子輸送層(50nm)と、cathode(Al、100nm)を順次に積層した(electron only device)。
ガラス基板上にITOと正孔阻止層(Liq、1nm)を蒸着した後、電子注入物質をドープしていない電子輸送層(50nm)と、cathode(Al、100nm)を順次に積層した。
Claims (8)
- 第1電極と、
前記第1電極上に順次に位置する正孔注入層、正孔輸送層及び発光物質層を含む発光部と、
前記発光部上に位置する第2電極と、
を含み、
前記発光物質層は、第1発光層と、電子注入物質(electron injection material)が添加され、発光領域及び非発光領域を含む第2発光層とを含む多層構造からなり、
前記第1発光層は、ホスト及びドーパントを含む発光物質を含むとともに電子注入物質を含まず、前記第2発光層は、前記電子注入物質とともに前記発光物質を含み、
前記第2電極は、前記第2発光層の上面と接触している
有機発光ダイオード。 - 前記電子注入物質は、アルカリ金属を含む、請求項1に記載の有機発光ダイオード。
- 前記第2発光層は、10−6cm2/Vs〜10−4cm2/Vsの電子移動度を有する、請求項1に記載の有機発光ダイオード。
- 基板上に備えられたトランジスタと、
前記トランジスタに連結される、請求項1乃至請求項3のうち、いずれか1項に記載の有機発光ダイオードと、
を含む、有機電界発光表示装置。 - 基板上に第1電極を形成する段階と、
前記第1電極上に赤色、緑色及び青色のサブ画素毎に正孔輸送層を形成する段階と、
前記正孔輸送層上に第1発光層を形成する段階と、
前記第1発光層上に、発光領域及び非発光領域を含む第2発光層を形成する段階と、
前記第2発光層上に第2電極を形成する段階と、
を含み、
前記正孔輸送層と前記第1発光層及び前記第2発光層は、溶液工程を通じて形成され、
前記第1発光層は、ホスト及びドーパントを含む発光物質を含むとともに電子注入物質を含まず、前記第2発光層は、前記電子注入物質とともに前記発光物質を含み、
前記第2電極は、前記第2発光層の上面と接触している
有機発光ダイオードの製造方法。 - 前記溶液工程は、インクジェット印刷(inkjet printing)、ノズル印刷(nozzle printing)、転写方式(transferring process)、スリットコーティング(slit coating)、グラビア印刷(gravure printing)及びサーマルジェット印刷(thermal jet printing)のうち、いずれか1つである、請求項5に記載の有機発光ダイオードの製造方法。
- 前記第1発光層は、有機溶媒を用いて形成され、前記第2発光層は、アルカリ金属の電子注入物質が分散された水溶性材料を用いて形成される、請求項5に記載の有機発光ダイオードの製造方法。
- 前記第1発光層は、水溶性材料を用いて形成され、前記第2発光層は、アルカリ金属の電子注入物質が分散された有機溶媒を用いて形成される、請求項5に記載の有機発光ダイオードの製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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KR1020150169502A KR101730555B1 (ko) | 2014-12-29 | 2015-11-30 | 유기발광다이오드 및 이를 구비한 유기전계발광 표시장치, 그리고 유기발광다이오드의 제조방법 |
KR10-2015-0169502 | 2015-11-30 |
Publications (2)
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JP2017103224A JP2017103224A (ja) | 2017-06-08 |
JP6509186B2 true JP6509186B2 (ja) | 2019-05-08 |
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Country Status (5)
Country | Link |
---|---|
US (2) | US20170155074A1 (ja) |
EP (1) | EP3174119B1 (ja) |
JP (1) | JP6509186B2 (ja) |
CN (1) | CN106972107B (ja) |
TW (1) | TWI624094B (ja) |
Families Citing this family (1)
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CN111902957B (zh) * | 2018-03-29 | 2023-08-29 | 夏普株式会社 | 发光元件及发光器件 |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05182762A (ja) * | 1991-12-27 | 1993-07-23 | Fuji Electric Co Ltd | 有機薄膜発光素子 |
JP3520396B2 (ja) * | 1997-07-02 | 2004-04-19 | セイコーエプソン株式会社 | アクティブマトリクス基板と表示装置 |
TW545080B (en) * | 2000-12-28 | 2003-08-01 | Semiconductor Energy Lab | Light emitting device and method of manufacturing the same |
JP2002299061A (ja) * | 2001-04-02 | 2002-10-11 | Honda Motor Co Ltd | 有機エレクトロルミネッセンス素子 |
JP4830254B2 (ja) * | 2003-01-23 | 2011-12-07 | セイコーエプソン株式会社 | 有機el装置の製造方法及び電子機器 |
JP5056016B2 (ja) * | 2004-12-28 | 2012-10-24 | コニカミノルタホールディングス株式会社 | 有機エレクトロルミネッセンス素子、表示装置及び照明装置 |
EP2284923B1 (de) * | 2005-04-13 | 2016-12-28 | Novaled GmbH | Anordnung für eine organische Leuchtdiode vom pin-Typ und Verfahren zum Herstellen |
TWI268736B (en) * | 2005-08-10 | 2006-12-11 | Au Optronics Corp | Organic electroluminescent device (OELD) and display including the same |
CN100508679C (zh) * | 2005-08-23 | 2009-07-01 | 友达光电股份有限公司 | 有机电激发光元件及包含有机电激发光元件的显示装置 |
TWI280814B (en) * | 2005-11-28 | 2007-05-01 | Chi Mei El Corp | Organic electroluminescence device and manufacturing method thereof and organic electroluminescence display panel |
KR101420327B1 (ko) * | 2008-07-24 | 2014-08-14 | 삼성디스플레이 주식회사 | 유기 발광 소자의 제조 방법 및 유기 발광 소자 |
JP2011061016A (ja) * | 2009-09-10 | 2011-03-24 | Sharp Corp | 有機エレクトロルミネッセンス素子 |
DE102009047883A1 (de) * | 2009-09-30 | 2011-03-31 | Osram Opto Semiconductors Gmbh | Optoelektronisches organisches Bauelement und Verfahren zu dessen Herstellung |
US9401493B2 (en) * | 2010-01-26 | 2016-07-26 | Unified Innovative Technology, Llc | Organic electroluminescent element, method for manufacturing same, and organic electroluminescent display device |
KR101173105B1 (ko) * | 2010-05-24 | 2012-08-14 | 한국과학기술원 | 유기발광소자 |
JP5778950B2 (ja) * | 2011-03-04 | 2015-09-16 | 株式会社Joled | 有機el表示装置およびその製造方法 |
TWI577238B (zh) * | 2012-04-25 | 2017-04-01 | 群康科技(深圳)有限公司 | 有機發光二極體及包含其之顯示裝置 |
-
2016
- 2016-10-24 TW TW105134329A patent/TWI624094B/zh active
- 2016-11-17 US US15/354,178 patent/US20170155074A1/en not_active Abandoned
- 2016-11-23 CN CN201611036426.8A patent/CN106972107B/zh active Active
- 2016-11-25 JP JP2016228775A patent/JP6509186B2/ja active Active
- 2016-11-29 EP EP16201030.0A patent/EP3174119B1/en active Active
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2021
- 2021-11-04 US US17/519,499 patent/US20220059794A1/en active Pending
Also Published As
Publication number | Publication date |
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TWI624094B (zh) | 2018-05-11 |
CN106972107A (zh) | 2017-07-21 |
JP2017103224A (ja) | 2017-06-08 |
US20170155074A1 (en) | 2017-06-01 |
EP3174119A1 (en) | 2017-05-31 |
CN106972107B (zh) | 2019-08-13 |
EP3174119B1 (en) | 2022-02-09 |
TW201719949A (zh) | 2017-06-01 |
US20220059794A1 (en) | 2022-02-24 |
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