JP6480222B2 - イオンビーム装置、イオン注入装置、イオンビーム放出方法 - Google Patents

イオンビーム装置、イオン注入装置、イオンビーム放出方法 Download PDF

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Publication number
JP6480222B2
JP6480222B2 JP2015054699A JP2015054699A JP6480222B2 JP 6480222 B2 JP6480222 B2 JP 6480222B2 JP 2015054699 A JP2015054699 A JP 2015054699A JP 2015054699 A JP2015054699 A JP 2015054699A JP 6480222 B2 JP6480222 B2 JP 6480222B2
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extraction electrode
ion beam
ion
container
source
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JP2015054699A
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English (en)
Japanese (ja)
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JP2016177870A (ja
Inventor
徳康 佐々木
徳康 佐々木
明男 東
明男 東
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Ulvac Inc
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Ulvac Inc
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Priority to JP2015054699A priority Critical patent/JP6480222B2/ja
Priority to TW105108279A priority patent/TWI671778B/zh
Priority to CN201610155289.3A priority patent/CN105990076B/zh
Publication of JP2016177870A publication Critical patent/JP2016177870A/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Combustion & Propulsion (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Physical Vapour Deposition (AREA)
JP2015054699A 2015-03-18 2015-03-18 イオンビーム装置、イオン注入装置、イオンビーム放出方法 Active JP6480222B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2015054699A JP6480222B2 (ja) 2015-03-18 2015-03-18 イオンビーム装置、イオン注入装置、イオンビーム放出方法
TW105108279A TWI671778B (zh) 2015-03-18 2016-03-17 離子束裝置、離子植入裝置、離子束放出方法
CN201610155289.3A CN105990076B (zh) 2015-03-18 2016-03-18 离子束装置、离子注入装置、离子束放出方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015054699A JP6480222B2 (ja) 2015-03-18 2015-03-18 イオンビーム装置、イオン注入装置、イオンビーム放出方法

Publications (2)

Publication Number Publication Date
JP2016177870A JP2016177870A (ja) 2016-10-06
JP6480222B2 true JP6480222B2 (ja) 2019-03-06

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JP2015054699A Active JP6480222B2 (ja) 2015-03-18 2015-03-18 イオンビーム装置、イオン注入装置、イオンビーム放出方法

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Country Link
JP (1) JP6480222B2 (zh)
CN (1) CN105990076B (zh)
TW (1) TWI671778B (zh)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3683821B1 (en) * 2017-09-14 2022-09-21 ULVAC, Inc. Ion source and ion implanter
WO2019058511A1 (ja) * 2017-09-22 2019-03-28 住友重機械工業株式会社 イオン源装置
TWI795448B (zh) * 2017-10-09 2023-03-11 美商艾克塞利斯科技公司 用於在角能量過濾器區域中穩定或移除射束線組件上所形成之膜的離子植入系統及方法
CN110100296B (zh) * 2017-10-18 2021-05-07 株式会社爱发科 离子源和离子注入装置
JP2020042959A (ja) * 2018-09-10 2020-03-19 日新イオン機器株式会社 イオンビーム照射装置
JP2020068161A (ja) 2018-10-26 2020-04-30 日新イオン機器株式会社 イオン源
CN110571117B (zh) * 2019-09-21 2022-07-08 厦门宇电自动化科技有限公司 一种可控温的离子注入机及其控温方法
CN113451513B (zh) * 2020-03-24 2024-03-22 中国科学院化学研究所 一种超低能离子注入方法
US11769648B2 (en) * 2021-10-28 2023-09-26 Applied Materials, Inc. Ion source gas injection beam shaping
CN117293006B (zh) * 2023-11-27 2024-04-05 青岛四方思锐智能技术有限公司 一种射频引出氢氦高能离子注入机

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0266839A (ja) * 1988-08-31 1990-03-06 Jeol Ltd 荷電粒子ビーム装置
JP3120595B2 (ja) * 1992-10-07 2000-12-25 石川島播磨重工業株式会社 イオンビーム引出装置
US5812403A (en) * 1996-11-13 1998-09-22 Applied Materials, Inc. Methods and apparatus for cleaning surfaces in a substrate processing system
US8809800B2 (en) * 2008-08-04 2014-08-19 Varian Semicoductor Equipment Associates, Inc. Ion source and a method for in-situ cleaning thereof
JP2011113714A (ja) * 2009-11-25 2011-06-09 Elpida Memory Inc イオン注入装置のクリーニング方法及びクリーニング機構を備えたイオン注入装置
JP5141732B2 (ja) * 2010-08-11 2013-02-13 日新イオン機器株式会社 イオン源電極のクリーニング方法
CN102034667B (zh) * 2010-11-03 2012-11-14 安徽华东光电技术研究所 一种高温日盲型紫外光电管及其制作方法

Also Published As

Publication number Publication date
CN105990076B (zh) 2019-08-30
TW201705179A (zh) 2017-02-01
TWI671778B (zh) 2019-09-11
JP2016177870A (ja) 2016-10-06
CN105990076A (zh) 2016-10-05

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