JP6476276B2 - パターン形成方法、感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、及び電子デバイスの製造方法 - Google Patents

パターン形成方法、感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、及び電子デバイスの製造方法 Download PDF

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JP6476276B2
JP6476276B2 JP2017502055A JP2017502055A JP6476276B2 JP 6476276 B2 JP6476276 B2 JP 6476276B2 JP 2017502055 A JP2017502055 A JP 2017502055A JP 2017502055 A JP2017502055 A JP 2017502055A JP 6476276 B2 JP6476276 B2 JP 6476276B2
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JPWO2016136476A1 (ja
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修史 平野
修史 平野
暁 高田
暁 高田
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Fujifilm Corp
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Fujifilm Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
JP2017502055A 2015-02-27 2016-02-10 パターン形成方法、感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、及び電子デバイスの製造方法 Active JP6476276B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2015038897 2015-02-27
JP2015038897 2015-02-27
JP2015050898 2015-03-13
JP2015050898 2015-03-13
PCT/JP2016/053983 WO2016136476A1 (fr) 2015-02-27 2016-02-10 Procédé de formation de motifs, composition de résine sensible à une lumière active ou sensible à un rayonnement, film sensible à une lumière active ou sensible à un rayonnement, procédé de fabrication de dispositif électronique et dispositif électronique

Publications (2)

Publication Number Publication Date
JPWO2016136476A1 JPWO2016136476A1 (ja) 2017-12-07
JP6476276B2 true JP6476276B2 (ja) 2019-02-27

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JP2017502055A Active JP6476276B2 (ja) 2015-02-27 2016-02-10 パターン形成方法、感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、及び電子デバイスの製造方法

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JP (1) JP6476276B2 (fr)
TW (1) TW201640226A (fr)
WO (1) WO2016136476A1 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6850567B2 (ja) * 2016-09-02 2021-03-31 東京応化工業株式会社 レジスト組成物及びレジストパターン形成方法
CN108117488B (zh) * 2016-11-28 2020-02-11 湖北固润科技股份有限公司 肉桂酸苯甲酰基甲酯类化合物及其制备方法和应用
KR102404436B1 (ko) * 2017-08-31 2022-06-02 후지필름 가부시키가이샤 감활성광선성 또는 감방사선성 수지 조성물, 레지스트막, 패턴 형성 방법, 전자 디바이스의 제조 방법
KR102230622B1 (ko) * 2017-11-24 2021-03-22 주식회사 엘지화학 포토레지스트 조성물 및 이를 이용한 포토레지스트 필름
JP7292378B2 (ja) * 2019-03-29 2023-06-16 富士フイルム株式会社 処理液、パターン形成方法
WO2023140191A1 (fr) * 2022-01-21 2023-07-27 富士フイルム株式会社 Composition de résine sensible aux rayons actifs ou au rayonnement, film sensible aux rayons actifs ou au rayonnement, procédé de formation de motif et procédé de fabrication de dispositif électronique

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007206638A (ja) * 2006-02-06 2007-08-16 Fujifilm Corp ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP2007248513A (ja) * 2006-03-13 2007-09-27 Fujifilm Corp ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP2007256639A (ja) * 2006-03-23 2007-10-04 Fujifilm Corp ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP4905786B2 (ja) * 2007-02-14 2012-03-28 富士フイルム株式会社 レジスト組成物及びそれを用いたパターン形成方法
JP5264665B2 (ja) * 2009-09-25 2013-08-14 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、及びそれを用いたパターン形成方法
JP5732364B2 (ja) * 2011-09-30 2015-06-10 富士フイルム株式会社 パターン形成方法、及び、電子デバイスの製造方法
JP6134603B2 (ja) * 2013-08-02 2017-05-24 富士フイルム株式会社 パターン形成方法、及び電子デバイスの製造方法

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JPWO2016136476A1 (ja) 2017-12-07
TW201640226A (zh) 2016-11-16
WO2016136476A1 (fr) 2016-09-01

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