JP6466979B2 - 半導体ナノ粒子および半導体ナノ粒子の製造方法ならびに発光デバイス - Google Patents

半導体ナノ粒子および半導体ナノ粒子の製造方法ならびに発光デバイス Download PDF

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JP6466979B2
JP6466979B2 JP2017034613A JP2017034613A JP6466979B2 JP 6466979 B2 JP6466979 B2 JP 6466979B2 JP 2017034613 A JP2017034613 A JP 2017034613A JP 2017034613 A JP2017034613 A JP 2017034613A JP 6466979 B2 JP6466979 B2 JP 6466979B2
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semiconductor nanoparticles
semiconductor
atoms
group
light
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JP2018039971A (ja
Inventor
鳥本　司
司 鳥本
達矢 亀山
達矢 亀山
まり乃 岸
まり乃 岸
桑畑　進
進 桑畑
太郎 上松
太郎 上松
大祐 小谷松
大祐 小谷松
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Nichia Corp
Nagoya University NUC
Tokai National Higher Education and Research System NUC
University of Osaka NUC
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Nichia Corp
Nagoya University NUC
Osaka University NUC
Tokai National Higher Education and Research System NUC
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Priority to US15/695,639 priority Critical patent/US10550322B2/en
Publication of JP2018039971A publication Critical patent/JP2018039971A/ja
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Publication of JP6466979B2 publication Critical patent/JP6466979B2/ja
Priority to US16/717,271 priority patent/US10870797B2/en
Priority to US17/097,516 priority patent/US11332663B2/en
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JP2017034613A 2016-09-06 2017-02-27 半導体ナノ粒子および半導体ナノ粒子の製造方法ならびに発光デバイス Active JP6466979B2 (ja)

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US15/695,639 US10550322B2 (en) 2016-09-06 2017-09-05 Semiconductor nanoparticles, method of producing semiconductor nanoparticles, and light-emitting device
US16/717,271 US10870797B2 (en) 2016-09-06 2019-12-17 Semiconductor nanoparticles, method of producing semiconductor nanoparticles, and light-emitting device
US17/097,516 US11332663B2 (en) 2016-09-06 2020-11-13 Semiconductor nanoparticles, method of producing semiconductor nanoparticles, and light-emitting device

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JP2016173446 2016-09-06
JP2016173446 2016-09-06

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JP2019002613A Active JP6838086B2 (ja) 2016-09-06 2019-01-10 半導体ナノ粒子および半導体ナノ粒子の製造方法ならびに発光デバイス
JP2021019580A Active JP7036328B2 (ja) 2016-09-06 2021-02-10 半導体ナノ粒子および半導体ナノ粒子の製造方法ならびに発光デバイス

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JP2021019580A Active JP7036328B2 (ja) 2016-09-06 2021-02-10 半導体ナノ粒子および半導体ナノ粒子の製造方法ならびに発光デバイス

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019070158A (ja) * 2016-09-06 2019-05-09 国立大学法人名古屋大学 半導体ナノ粒子および半導体ナノ粒子の製造方法ならびに発光デバイス

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7307046B2 (ja) 2018-02-15 2023-07-11 国立大学法人大阪大学 コアシェル型半導体ナノ粒子、その製造方法および発光デバイス
JP7214707B2 (ja) 2018-02-15 2023-01-30 国立大学法人大阪大学 半導体ナノ粒子、その製造方法および発光デバイス
US10954439B2 (en) 2018-05-10 2021-03-23 National University Corporation Tokai National Higher Education And Research System Semiconductor nanoparticles, method of producing the semiconductor nanoparticles, and light-emitting device
JP7007671B2 (ja) * 2018-06-22 2022-01-24 国立大学法人東海国立大学機構 半導体ナノ粒子、その製造方法及び発光デバイス
JP7656289B2 (ja) * 2019-02-08 2025-04-03 国立大学法人東海国立大学機構 半導体ナノ粒子及びその製造方法
US11757064B2 (en) 2019-03-12 2023-09-12 National University Corporation Tokai National Higher Education And Research System Semiconductor nanoparticle, method for manufacturing same, and light emitting device
JP7456591B2 (ja) * 2019-03-12 2024-03-27 国立大学法人東海国立大学機構 半導体ナノ粒子及びその製造方法、並びに発光デバイス
EP4632036A1 (en) 2019-08-23 2025-10-15 Toppan Inc. Quantum dot and method for producing same
JP7725024B2 (ja) * 2020-03-09 2025-08-19 国立大学法人東海国立大学機構 発光材料及びその製造方法
JP7639830B2 (ja) 2020-12-25 2025-03-05 Ｔｏｐｐａｎホールディングス株式会社 量子ドットの製造方法、及び、量子ドット
JP2023119817A (ja) * 2022-02-17 2023-08-29 日亜化学工業株式会社 発光材料及び発光装置

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1956068A4 (en) * 2005-09-02 2010-07-28 Univ Nagoya Nat Univ Corp SEMICONDUCTOR APPLICATIONS AND MANUFACTURING METHOD THEREFOR
GB0522027D0 (en) * 2005-10-28 2005-12-07 Nanoco Technologies Ltd Controlled preparation of nanoparticle materials
JP2007169605A (ja) * 2005-11-24 2007-07-05 National Institute Of Advanced Industrial & Technology 蛍光体、及びその製造方法
JP4969100B2 (ja) * 2005-12-22 2012-07-04 京セラ株式会社 半導体蛍光体の製造方法
JP2007197612A (ja) * 2006-01-27 2007-08-09 Kyocera Corp 蛍光体及び波長変換器並びに発光装置
JP2010031115A (ja) * 2008-07-28 2010-02-12 Osaka Univ 半導体ナノ粒子の製造方法、および半導体ナノ粒子
JP5604835B2 (ja) * 2008-09-30 2014-10-15 東レ株式会社 半導体ナノ粒子及びその製造方法
JP2011178645A (ja) * 2010-03-04 2011-09-15 Idec Corp 半導体ナノ粒子及びその製造方法
KR101360087B1 (ko) * 2012-02-20 2014-02-12 한국화학연구원 아연-실버-인듐-설파이드의 조성을 갖는 발광특성이 향상된 발광나노입자와 조합화학을 이용한 이의 제조방법
WO2014129067A1 (ja) * 2013-02-19 2014-08-28 Jsr株式会社 波長変換フィルム、波長変換基板、波長変換素子および表示素子
KR101960945B1 (ko) * 2013-03-04 2019-03-20 나노코 테크놀로지스 리미티드 박막 태양 전지를 위한 구리-인듐-갈륨-칼코게나이드 나노 입자 전구체
CN103265949B (zh) * 2013-04-28 2015-07-15 温州大学 一种单核AgInS2量子点的制备方法
US20150162468A1 (en) * 2013-12-06 2015-06-11 Nanoco Technologies Ltd. Core-Shell Nanoparticles for Photovoltaic Absorber Films
JP6466979B2 (ja) * 2016-09-06 2019-02-06 国立大学法人名古屋大学 半導体ナノ粒子および半導体ナノ粒子の製造方法ならびに発光デバイス

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019070158A (ja) * 2016-09-06 2019-05-09 国立大学法人名古屋大学 半導体ナノ粒子および半導体ナノ粒子の製造方法ならびに発光デバイス

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JP2021088716A (ja) 2021-06-10
JP6838086B2 (ja) 2021-03-03
JP7036328B2 (ja) 2022-03-15
JP2018039971A (ja) 2018-03-15
JP2019070158A (ja) 2019-05-09

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