JP6454488B2 - プラズマ処理装置 - Google Patents

プラズマ処理装置 Download PDF

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Publication number
JP6454488B2
JP6454488B2 JP2014141882A JP2014141882A JP6454488B2 JP 6454488 B2 JP6454488 B2 JP 6454488B2 JP 2014141882 A JP2014141882 A JP 2014141882A JP 2014141882 A JP2014141882 A JP 2014141882A JP 6454488 B2 JP6454488 B2 JP 6454488B2
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helical coil
plasma
frequency power
phase difference
phase
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JP2014141882A
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Japanese (ja)
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JP2016018727A (ja
JP2016018727A5 (enrdf_load_stackoverflow
Inventor
芳文 小川
芳文 小川
西尾　良司
良司 西尾
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
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  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
JP2014141882A 2014-07-10 2014-07-10 プラズマ処理装置 Active JP6454488B2 (ja)

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JP2014141882A JP6454488B2 (ja) 2014-07-10 2014-07-10 プラズマ処理装置

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JP2014141882A JP6454488B2 (ja) 2014-07-10 2014-07-10 プラズマ処理装置

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JP2016018727A JP2016018727A (ja) 2016-02-01
JP2016018727A5 JP2016018727A5 (enrdf_load_stackoverflow) 2017-01-26
JP6454488B2 true JP6454488B2 (ja) 2019-01-16

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Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI713414B (zh) * 2017-10-23 2020-12-11 日商國際電氣股份有限公司 基板處理裝置、半導體裝置之製造方法及記錄媒體
JP7030204B2 (ja) * 2018-09-20 2022-03-04 株式会社Kokusai Electric 基板処理装置、半導体装置の製造方法、基板処理方法およびプログラム
JP7203869B2 (ja) * 2021-01-18 2023-01-13 株式会社Kokusai Electric 基板処理装置、半導体装置の製造方法、およびプログラム

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4918031A (en) * 1988-12-28 1990-04-17 American Telephone And Telegraph Company,At&T Bell Laboratories Processes depending on plasma generation using a helical resonator
US5965034A (en) * 1995-12-04 1999-10-12 Mc Electronics Co., Ltd. High frequency plasma process wherein the plasma is executed by an inductive structure in which the phase and anti-phase portion of the capacitive currents between the inductive structure and the plasma are balanced
JP3208079B2 (ja) * 1996-02-27 2001-09-10 松下電器産業株式会社 高周波電力印加装置及びプラズマ処理装置
JP2000012287A (ja) * 1998-06-26 2000-01-14 Tokyo Ohka Kogyo Co Ltd プラズマ処理装置
WO2001065895A2 (en) * 2000-03-01 2001-09-07 Tokyo Electron Limited Electrically controlled plasma uniformity in a high density plasma source
JP4889144B2 (ja) * 2000-10-31 2012-03-07 アプライド マテリアルズ インコーポレイテッド 成膜方法
US20040261718A1 (en) * 2003-06-26 2004-12-30 Kim Nam Hun Plasma source coil for generating plasma and plasma chamber using the same
US10271416B2 (en) * 2011-10-28 2019-04-23 Applied Materials, Inc. High efficiency triple-coil inductively coupled plasma source with phase control
KR102020446B1 (ko) * 2013-01-10 2019-09-10 삼성전자주식회사 에피텍시얼막 형성 방법 및 이를 수행하기 위한 장치 및 시스템
JP2015050362A (ja) * 2013-09-03 2015-03-16 株式会社日立ハイテクノロジーズ プラズマ処理装置

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