JP6448884B1 - 蓄電池 - Google Patents
蓄電池 Download PDFInfo
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- JP6448884B1 JP6448884B1 JP2018555305A JP2018555305A JP6448884B1 JP 6448884 B1 JP6448884 B1 JP 6448884B1 JP 2018555305 A JP2018555305 A JP 2018555305A JP 2018555305 A JP2018555305 A JP 2018555305A JP 6448884 B1 JP6448884 B1 JP 6448884B1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/07—Dielectric layers
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Battery Electrode And Active Subsutance (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
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Abstract
【解決手段】蓄電池10は、誘電体11と、この誘電体11を介して離れて配置された一対の電極12a,12bとを有する。一対の電極12a,12bの表面には、電極表面層1が設けられている。この電極表面層1は、互いに独立して励起し、かつ、静電容量を有する複数のクラスター型セルよりなる。複数のクラスター型セルのそれぞれは、自発電荷を有し、かつ、アモルファスシリコン3aでコーティングされた複数の結晶系ナノダイヤモンド半導体粒子3が房状に結合した構造、すなわち、クラスター構造を有しており、その直径は15nm以上30nm以下である。
Description
2 クラスター型セル
3 結晶系ナノダイヤモンド半導体粒子
3a グラファイト
4 アモルファスシリコン
5a,5b 電気接点
10 蓄電池
11 誘電体
12a,12b 電極
Claims (5)
- 蓄電池において、
誘電体と、
前記誘電体を介して離れて配置された一対の電極と、
前記一対の電極の表面に設けられた電極表面層とを有し、
前記電極表面層は、互いに独立して励起し、かつ、静電容量を有する複数のクラスター型セルよりなり、
前記複数のクラスター型セルのそれぞれは、自発電荷を有し、かつ、アモルファスシリコンでコーティングされた複数の結晶系ナノダイヤモンド半導体粒子が房状に結合していることを特徴とする蓄電池。 - 前記結晶系ナノダイヤモンド半導体粒子は、グラファイトでコーティングされていることを特徴とする請求項1に記載された蓄電池。
- 前記クラスター型セルの直径は、15nm以上30nm以下であることを特徴とする請求項1または2に記載された蓄電池。
- 前記結晶系ナノダイヤモンド半導体粒子の直径は、3nm以上8nm以下であることを特徴とする請求項1から3のいずれかに記載された蓄電池。
- 前記結晶系ナノダイヤモンド半導体粒子の活性化エネルギーレベルは、0.3eV以上0.7eV以下であることを特徴とする請求項4に記載された蓄電池。
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PCT/JP2017/025618 WO2019012673A1 (ja) | 2017-07-13 | 2017-07-13 | 蓄電池 |
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JP6448884B1 true JP6448884B1 (ja) | 2019-01-09 |
JPWO2019012673A1 JPWO2019012673A1 (ja) | 2019-07-11 |
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WO (1) | WO2019012673A1 (ja) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002299238A (ja) * | 2001-04-04 | 2002-10-11 | Sony Corp | 多結晶性半導体薄膜の形成方法、及び半導体装置の製造方法 |
JP2003513462A (ja) * | 1999-10-30 | 2003-04-08 | フォルシュングスツェントルム カールスルーエ ゲゼルシャフト ミット ベシュレンクテル ハフツング | 電極、スポンジ状浸透性層、電解質および電圧を印加する手段を有する装置 |
JP2013512554A (ja) * | 2009-11-30 | 2013-04-11 | オーツェー エリコン バルザーズ アーゲー | 電子電池に応用されるコア−シェルナノ粒子 |
JP2014203985A (ja) * | 2013-04-05 | 2014-10-27 | 徹 金城 | 太陽電池保護膜、太陽電池及びそれらの製造方法 |
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2017
- 2017-07-13 WO PCT/JP2017/025618 patent/WO2019012673A1/ja active Application Filing
- 2017-07-13 JP JP2018555305A patent/JP6448884B1/ja active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003513462A (ja) * | 1999-10-30 | 2003-04-08 | フォルシュングスツェントルム カールスルーエ ゲゼルシャフト ミット ベシュレンクテル ハフツング | 電極、スポンジ状浸透性層、電解質および電圧を印加する手段を有する装置 |
JP2002299238A (ja) * | 2001-04-04 | 2002-10-11 | Sony Corp | 多結晶性半導体薄膜の形成方法、及び半導体装置の製造方法 |
JP2013512554A (ja) * | 2009-11-30 | 2013-04-11 | オーツェー エリコン バルザーズ アーゲー | 電子電池に応用されるコア−シェルナノ粒子 |
JP2014203985A (ja) * | 2013-04-05 | 2014-10-27 | 徹 金城 | 太陽電池保護膜、太陽電池及びそれらの製造方法 |
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WO2019012673A1 (ja) | 2019-01-17 |
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