JP6444256B2 - Coating processing apparatus and coating processing method - Google Patents

Description

  The present invention relates to a coating processing apparatus in which a substrate is disposed inside an annular frame, and a processing liquid is applied to the surface of the substrate attached to the frame with an adhesive tape.

  In recent years, for example, in semiconductor device manufacturing processes, semiconductor wafers (hereinafter referred to as “wafers”) have become larger in diameter. Further, in a specific process such as mounting, it is required to make the wafer thinner. For example, if a thin wafer with a large diameter is transported as it is, the wafer may be warped or cracked. For this reason, a wafer is disposed inside an annular frame, and a thinned wafer is transported by attaching a tape to the frame and the back surface of the wafer (see Patent Document 1).

  Further, a treatment liquid, for example, a high-viscosity material is applied to the surface of the reinforced wafer to form a coating film, and then the coating film is dried. For example, after drying, a thick film having a thickness of 10 μm to 2 mm is formed on the surface of the wafer. In some cases, it must be formed. In general, in the coating process for forming a thick film, the long nozzle is moved while discharging the processing liquid from the long nozzle in a strip shape to form a coating film (see Patent Document 2).

JP 2013-016579 A JP 2013-098371 A

  However, in order to form a thick film having a thickness of 10 μm to 2 mm after drying, the coating film before drying (during the coating process) needs to be applied with a thickness several times that of the coating film. Conventionally, when a thick coating film as described above is formed only on the surface of the wafer, the film thickness on the wafer periphery tends to be thicker than other regions, and the uniformity of the film thickness on the wafer surface deteriorates. It was.

  The present invention solves the problems of the prior art, and provides a coating processing apparatus and a coating processing method for forming a coating film having a uniform film thickness on the surface of a wafer reinforced by a frame.

In the coating processing apparatus according to one aspect of the embodiment, a substrate is disposed inside an annular frame, and a processing liquid is applied to the substrate held on the inside of the frame by sticking an adhesive tape to the frame and the substrate. A substrate holding means for holding the substrate attached to the tape, a frame holding means for holding the frame attached to the tape, and the processing liquid in a straight line. Processing liquid supply means, moving means for relatively moving the processing liquid supply means and the substrate, and control means for controlling operations of the processing liquid supply means and the moving means, The substrate holding means has a shape that is larger than the substrate and smaller than the frame, and supports the substrate together with the tape so that an annular shape of the tape is formed around the substrate. Tanmen to allow the formation, wherein the control means adjusts the pressure in the liquid reservoir in communication with the discharge port of the treatment liquid supplying means, a liquid pool of said processing liquid over the thickness of the substrate to the discharge port Formed on the annular flat surface of the tape supported by the substrate holding means and the surface of the substrate so that the end of the coating film that is thicker than the coating film on the substrate is positioned outside the substrate. The operation of the processing liquid supply means and the moving means is controlled so that the processing liquid is applied to a wider area than the substrate including the substrate by applying the processing liquid.

In the coating treatment method according to one aspect of the embodiment, the substrate is disposed inside the annular frame, and an adhesive tape is attached to the frame and the substrate to treat the substrate held inside the frame. An application method for applying a liquid, wherein an annular flat surface of the tape is formed around the substrate by supporting the substrate together with the tape on a stage having a shape larger than the substrate and smaller than the frame. And a nozzle for supplying the processing liquid in a straight line is arranged outside the one end of the substrate so that the end of the coating film that is thicker than the coating film on the substrate is positioned outside the substrate. an arrangement step of arranging laterally, then, by adjusting the pressure in the liquid reservoir in communication with the discharge port of the nozzle, to form the liquid of the substrate the treatment solution or the thickness of the discharge port reservoir, A contact step in which the linear processing liquid supplied from the nozzle is brought into contact with the annular flat surface of the tape located outside one end of the substrate, and then the linear processing liquid is supported by the stage. The nozzle is relatively moved to the outside of the other end of the substrate while being in contact with the annular flat surface of the tape and the surface of the substrate, and the processing liquid is applied to a wider area than the substrate including the substrate. An application step.

  By performing the coating process using the coating processing apparatus and the coating processing method of the present invention, it is possible to form a coating film having a uniform film thickness on the surface of the wafer.

It is a top view of the wafer hold | maintained at the flame | frame and the tape. It is a longitudinal cross-sectional view of the wafer hold | maintained at the flame | frame and the tape. It is a top view which shows the outline of a structure of a coating processing apparatus. It is a longitudinal cross-sectional view which shows the outline of a structure of a coating processing apparatus. It is a longitudinal cross-sectional view of a nozzle. It is explanatory drawing which shows the mode at the time of an application | coating process (arrangement | positioning process). It is explanatory drawing which shows the mode at the time of an application | coating process (setting process). It is explanatory drawing which shows the mode at the time of an application | coating process (a contact process and an application | coating process). It is a top view of the coating film formed in this Embodiment. It is a longitudinal cross-sectional view of the coating film formed in this Embodiment. It is a longitudinal cross-sectional view of the coating film formed as a comparative example of this Embodiment.

  Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.

The substrate to be processed, for example, the wafer W is transported or subjected to a predetermined process while being reinforced using the frame F. By being reinforced using the frame F, the wafer W is prevented from warping or cracking.

  FIG. 1 is a plan view of the wafer W held on the frame F and the tape T, and FIG. 2 is a longitudinal sectional view of the wafer W held on the frame F and the tape T.

The wafer W is disposed inside the annular frame F. An adhesive tape T is attached to the back surface of the frame F and the wafer W, and the wafer W is held inside the frame F by the tape T. The frame F is formed of a metal such as aluminum. The thickness of the frame F is equivalent to about twice that of the wafer W. The wafer W is reinforced by the annular frame F, and warpage and cracking of the wafer W are prevented.

  FIG. 3 is a plan view illustrating the outline of the configuration of the coating treatment apparatus 1, and FIG. 4 is a longitudinal sectional view illustrating the outline of the configuration of the coating treatment apparatus 1.

  The coating processing apparatus 1 includes a substrate holding unit that holds the wafer W attached to the tape T, such as a stage 11, a frame holding unit that holds the frame F attached to the tape T, such as a frame holding unit 12, and a wafer W. The processing liquid supply means for supplying a processing liquid such as a high-viscosity material such as a long nozzle 14, the moving means for moving the processing liquid supply means such as the nozzle moving means 22, and the operation of the coating processing apparatus 1 are controlled. For example, a control unit 24.

  As shown in FIG. 3, the stage 11 is similar to the outer shape of the wafer W, and is about 20 to 100 mm larger than the periphery of the wafer W, for example. The stage 11 is configured to suck and hold the wafer W placed on the upper surface thereof. The stage 11 is configured to be larger than the outer peripheral edge of the wafer W and smaller than the inner peripheral edge of the frame F so that the back surface of the tape T can be sucked and held together with the back surface of the wafer W inside the frame F. I have to. The frame holding unit 12 is positioned around the stage 11 as shown in FIG. The coating processing apparatus 1 includes a nozzle standby unit 15 in which the nozzles 14 wait. The nozzle standby unit 15 is disposed on the side of the stage 11.

  The nozzle moving means 22 includes the rail 16 and the drive unit 21. The rail 16 is disposed on the side of the stage 11 and the nozzle standby unit 15. The nozzle 14 is guided along the rail 16 by the operation of the drive unit 21, and can move between the stage 11 and the nozzle standby unit 15. The nozzle 14 can be moved up and down by the operation of the drive unit 21. As shown in FIG. 4, the nozzle 14 can move up and down in the height direction with respect to the nozzle standby unit 15 by moving up and down, and can also move in and out of the stage 11 in the height direction. . The nozzle moving unit 22 functions as a moving unit that relatively moves the nozzle 14 and the wafer W held on the stage 11.

  The stage 11 is formed of a porous material. As shown in FIG. 4, an on-off valve 23 is connected to the stage 11, and the on-off valve 23 is connected to a vacuum source 25 that is power. By opening and closing the on-off valve 23, the wafer W attached to the tape T can be sucked and held on the stage 11 or released.

  The frame holding unit 12 includes a frame fixing unit that fixes and holds the frame F placed on the frame holding unit 12. The frame fixing means includes a plurality of suction holes 20 (FIG. 3) formed on the surface of the frame holding portion 12 and an on-off valve 19 (FIG. 4) connected to the suction holes 20. The on-off valve 19 is connected to the vacuum source 25. By opening and closing the on-off valve 19, the frame F attached to the tape T can be sucked and held on the frame holding portion 12 or released.

  As shown in FIG. 4, the coating treatment apparatus 1 includes a frame elevating unit 13 that elevates the frame holding unit 12. The frame elevating means 13 functions as a height adjusting means for adjusting the relative height position between the stage 11 and the frame holding portion 12.

  As shown in FIG. 4, a pump 17 is connected to the nozzle 14, and a treatment liquid tank 18 is connected to the pump 17. A processing liquid is stored in the processing liquid tank 18, and the pump 17 is driven to supply the processing liquid from the processing liquid tank 18 to the nozzle 14.

  FIG. 5 is a longitudinal sectional view of the nozzle 14. The nozzle 14 includes a liquid storage unit 31, a slit 32, and a discharge port 33. The liquid storage unit 31 is located inside the nozzle 14 and stores the processing liquid supplied from the processing liquid tank 18 in the liquid storage unit 31. One end of the slit 32 is connected to the liquid storage unit 31, the other end is located on the lower surface of the nozzle 14, and the slit 32 is a flow path for the processing liquid. A discharge port 33 is formed at the lower end of the slit 32. The discharge port 33 has a linear shape larger (longer) than the diameter of the wafer W. By supplying the processing liquid L to the liquid storage unit 31 and adjusting the pressure in the liquid storage unit 31, the processing liquid L is a straight liquid reservoir, and the convex shape N having a convex shape in the cross section is formed at the discharge port 33. It is formed. The convex portion N is held without dropping from the discharge port 33 due to the surface tension of the processing liquid L.

  The coating processing apparatus 1 includes a control unit that controls the operation of the coating processing apparatus 1, for example, a control unit 24. The control unit 24 controls the operation of the drive unit 21 shown in FIG. 3, the on-off valve 19, the on-off valve 23, the frame elevating means 13, the pump 17 and the like shown in FIG. 4, and causes the coating treatment apparatus 1 to perform a predetermined operation. It is possible.

  Next, the coating process performed by the coating processing apparatus 1 will be described. 6-8 is explanatory drawing which shows the mode at the time of an application | coating process.

  First, the wafer W reinforced using the frame F is loaded into the coating processing apparatus 1. The wafer W with the tape T attached to the back surface is placed on the stage 11, and the frame F with the tape T attached to the back surface is placed on the frame holding unit 12. At this time, the frame elevating means 13 is operated so that the surface height of the stage 11 and the surface height of the frame holding portion 12 are substantially the same height.

  Next, the on-off valve 19 and the on-off valve 23 are opened, and the wafer W having the tape T attached to the back surface is attracted and held on the stage 11 and the frame F having the tape T attached to the back surface is adsorbed and held on the frame holding portion 12. Let

  Next, as shown in FIG. 7, the frame elevating means 13 is operated to lower the frame holding unit 12. At this time, the tape T is lowered so as not to be plastically deformed (up to about 3 mm). Moreover, it is preferable to lower the frame holding unit 12 so that the surface height of the frame F is positioned relatively lower than the surface height of the wafer W (setting step) (for example, the surface height of the frame holding unit 12 is the stage height). 11 is set to be 2 mm lower than the surface height of 11). Here, since the surface of the stage 11 is wider than the wafer W, the tape T is supported on the surface of the stage 11 together with the wafer W outside the wafer W, and the frame holding unit 12 is lowered. As a result, the tape T positioned around the wafer W becomes an annular flat surface, and the tape T positioned outside the tape T becomes an inclined surface directed outward and downward.

  Next, the nozzle moving means 22 is operated, and as shown in FIG. 8, the nozzle 14 is raised from the nozzle standby portion 15, horizontally moved to the left and lowered, and the nozzle 14 is disposed on the outer side from one end of the wafer W. (Arrangement step) (For example, the nozzle 14 is positioned on the side 5 mm outside from one end of the wafer W).

  Next, when the pressure in the liquid storage unit 31 is adjusted, the processing liquid in the liquid storage unit 31 reaches the discharge port 33 through the slit 32, and a convex portion N that is a liquid storage of the processing liquid is formed in the discharge port 33. The And the pressure in the liquid storage part 31 is maintained so that the convex part N may be hold | maintained at the discharge outlet 33, without falling from the discharge outlet 33. FIG. At this time, it is preferable that the height of the convex portion N (the length from the discharge port 33 to the lower end of the convex portion N) be equal to or greater than the thickness of the wafer W. Thereafter, the nozzle 14 is lowered, and the descent of the nozzle 14 is stopped when the lower end of the convex portion N comes into contact with the surface of the tape T (liquid contact) (contact process).

  Next, the nozzle 14 is horizontally moved in the left direction toward the other end of the wafer W as shown in FIG. At this time, the lower end of the convex portion N is horizontally moved while being in contact with the tape T and the wafer W (outside one end of the wafer W, the lower end of the convex portion N is horizontally moved while being in contact with the tape T, and one end of the wafer W is moved. The lower end of the convex portion N is horizontally moved while being in contact with the tape T and the wafer W from the other end to the other end, and the lower end of the convex portion N is horizontally moved while being in contact with the tape T outside the other end of the wafer W. ). The processing liquid of the convex portion N is sucked by the surface tension of the tape T and the wafer W without dropping from the discharge port 33, and a coating film of the processing liquid is formed on the surface of the tape T and the wafer W (application process). ). At this time, since the tape T positioned around the wafer W is supported by the stage 11 together with the wafer W to form an annular flat surface, the convex portion N of the processing liquid is not only on the surface of the wafer W but also on the tape T. It is also applied to the surface (annular flat surface). At this time, since the surface height position of the frame F is set lower than the surface height position of the wafer W, there is no possibility that the lower end of the nozzle 14 contacts the frame F and breaks the nozzle 14 during the coating process. Thereafter, the nozzle 14 is moved to the outside of the other end of the wafer W to form a coating film to the outside of the other end of the wafer W. As a result, a coating film can be formed not only on the surface of the wafer W but also on the surface (annular flat surface) of the tape T outside the outer peripheral edge of the wafer W. A coating film can be formed in a wide area.

  As described above, after the coating film is formed in a region wider than the wafer W including the wafer W, the nozzle 14 is raised, horizontally moved, and lowered to move the nozzle 14 to the nozzle waiting portion 15 and move the nozzle 14 to the nozzle waiting portion. Wait at 15. Next, the suction operation of the stage 11 and the frame holding unit 12 is released, and the wafer W reinforced by the frame F is unloaded from the coating processing apparatus 1.

  Here, a case where the coating film is formed in a region wider than the wafer W including the wafer W according to the present embodiment and a case where the coating film is formed only on the surface of the wafer W will be described.

  First, as described above, a coating film of the treatment liquid is formed, and then the formed coating film is dried to obtain a dry film having a desired film thickness. And in order to obtain the dry film of a desired film thickness, it is necessary to form the film thickness of the coating film at the time of application | coating with the thickness of several times the film thickness of a dry film. Here, also when the film thickness of the dry film is formed to be a thick film, for example, 10 μm to 2 mm, the film thickness of the coating film at the time of coating needs to be several times that thickness. When such a thick film is applied, even if the film thickness is uniform immediately after application, the film thickness in the vicinity of the end of the applied film changes to another region after a time has elapsed since application (for example, after 10 seconds have elapsed). Generally thicker than the film thickness. This is a physical phenomenon and is considered to occur when the coating liquid moves due to surface tension or the like.

  FIG. 9 is a plan view of the coating film formed in the present embodiment, and FIG. 10 is a longitudinal sectional view of the coating film formed in the present embodiment. In the coating process in the present embodiment, as shown in FIGS. 9 and 10, the coating film M is formed in a region including the wafer W and wider than the wafer W. In addition, the coating film M is formed so that the end portion of the coating film M that tends to be generally thick is located outside the wafer W as shown in FIG. 10, and the film thickness of the coating film M on the wafer W is uniform. It is trying to become. When the coating film M is dried from this state, a dry film having a uniform film thickness is formed on the wafer W.

  As a comparative example with the present embodiment, FIG. 11 shows a longitudinal sectional view when a coating film is formed only on the surface of the wafer W. FIG. Here, the coating process procedure in FIG. 11 will be described. The nozzle 14 is raised from the nozzle standby unit 15, moved horizontally to the left, and lowered, and the nozzle 14 is disposed on one end of the wafer W so that the discharge port 33 is positioned on one end of the wafer W. Next, the pressure in the liquid storage part 31 is adjusted, and the convex part N is formed in the discharge port 33. Next, the nozzle 14 is lowered, and the descent of the nozzle 14 is stopped when the lower end of the convex portion N comes into contact with one end of the wafer W (liquid landing). Thereafter, the nozzle 14 is moved horizontally toward the other end of the wafer W while adjusting the pressure in the liquid storage unit 31. When the convex portion N reaches the other end of the wafer W, the horizontal movement of the nozzle 14 is stopped. Then, a coating film of the processing liquid is formed only on the surface of the wafer W. Thereafter, the nozzle 14 is moved to the nozzle standby unit 15, and the nozzle 14 is made to standby by the nozzle standby unit 15.

  Here, as shown in FIG. 11, when the coating film M is formed only on the surface of the wafer W, the film thickness at the end of the wafer W becomes thicker as compared with other regions as time elapses from coating. When the coating film M is dried from the state of FIG. 11, the cross-sectional shape of the dried film after drying remains similar to that of FIG. 11, and the film thickness of the dried film is uniform in the plane of the wafer W in the comparative example. Don't be.

  In the coating process according to the present embodiment, a film having a uniform thickness (the coating film and the coating film are dried on the wafer W reinforced by the frame F by forming the coating film in a region wider than the wafer W including the wafer W. A dry film) can be formed.

  In addition, this invention is not limited to said embodiment, A various deformation | transformation is possible. For example, the method of holding the wafer W and the frame F in the stage 11 and the frame holding unit 12 is not limited to vacuum suction, and may be held and fixed using electrostatic suction or other methods. Further, the shapes of the stage 11 and the frame holding unit 12 are not limited to the present embodiment, and various changes can be made.

  Further, the configuration of the coating film forming unit is not limited to the present embodiment, and for example, the configuration of the coating film forming unit described in JP2013-098371A may be used.

W wafer F frame T tape 1 coating processing equipment 11 stage (substrate holding means)
12 Frame holding part (frame holding means)
13 Frame lifting / lowering means (height adjusting means)
14 Nozzle (Processing liquid supply means)
22 Nozzle moving means (moving means)
24 Control unit (control means)

Claims (3)

A coating processing apparatus for disposing a substrate inside an annular frame and applying a processing liquid to the substrate held inside the frame by attaching an adhesive tape to the frame and the substrate,
Substrate holding means for holding the substrate attached to the tape;
Frame holding means for holding the frame affixed to the tape;
Treatment liquid supply means for supplying the treatment liquid in a straight line;
Moving means for relatively moving the processing liquid supply means and the substrate;
Control means for controlling the operation of the processing liquid supply means and the moving means,
The substrate holding means has a shape larger than the substrate and smaller than the frame, and by supporting the substrate together with the tape, an annular flat surface of the tape can be formed around the substrate,
The control unit adjusts the pressure of a liquid storage unit communicating with the discharge port of the processing liquid supply unit, and forms a liquid pool of the processing liquid having a thickness greater than the thickness of the substrate at the discharge port. Applying the treatment liquid to the annular flat surface of the tape supported by the substrate holding means and the surface of the substrate so that the end of the coating film that is thicker than the coating film is located outside the substrate; Then, the coating processing apparatus controls the operations of the processing liquid supply means and the moving means so that the processing liquid is applied to an area wider than the substrate including the substrate. The control means includes
The processing liquid supply means is arranged outside one end of the substrate so that the end of the coating film that is thicker than the coating film on the substrate is located outside the substrate ,
Thereafter, the pressure of the liquid storage portion communicating with the discharge port of the processing liquid supply unit is adjusted, and a liquid pool of the processing liquid having a thickness equal to or larger than the thickness of the substrate is formed at the discharge port, and supplied from the processing liquid supply unit The straight processing solution thus brought into contact with the annular flat surface of the tape located outside one end of the substrate;
Thereafter, the processing liquid supply means is controlled to move to the outside of the other end of the substrate while bringing the linear processing liquid into contact with the annular flat surface of the tape and the surface of the substrate. The coating treatment apparatus according to claim 1. A substrate is disposed inside an annular frame, and a coating treatment method is applied to apply a treatment liquid to the substrate held inside the frame by attaching an adhesive tape to the frame and the substrate,
A setting step of forming an annular flat surface of the tape around the substrate by supporting the substrate together with the tape on a stage having a shape larger than the frame and smaller than the frame;
The nozzle for supplying the processing solution in a straight line is arranged on the outer side of one end of the substrate so that the end of the coating film that is thicker than the coating film on the substrate is positioned on the outer side of the substrate. The placement process;
Thereafter, the pressure of the liquid reservoir communicating with the discharge port of the nozzle is adjusted to form a liquid pool of the treatment liquid having a thickness equal to or greater than the thickness of the substrate at the discharge port, and the linear shape supplied from the nozzle Contacting a treatment liquid with an annular flat surface of the tape located outside one end of the substrate;
Then, the nozzle is moved relative to the outside of the other end of the substrate while bringing the linear processing liquid into contact with the annular flat surface of the tape supported by the stage and the surface of the substrate. An application step of applying the treatment liquid to a wider area than the substrate including;
A coating treatment method comprising:

Images