JP6433169B2 - 薄膜半導体装置 - Google Patents

薄膜半導体装置 Download PDF

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Publication number
JP6433169B2
JP6433169B2 JP2014128377A JP2014128377A JP6433169B2 JP 6433169 B2 JP6433169 B2 JP 6433169B2 JP 2014128377 A JP2014128377 A JP 2014128377A JP 2014128377 A JP2014128377 A JP 2014128377A JP 6433169 B2 JP6433169 B2 JP 6433169B2
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Japan
Prior art keywords
light
electrode
thin film
signal line
channel region
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Active
Application number
JP2014128377A
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English (en)
Japanese (ja)
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JP2016009719A (ja
JP2016009719A5 (enExample
Inventor
多田　正浩
正浩 多田
卓 中村
卓 中村
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Japan Display Inc
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Japan Display Inc
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Publication date
Application filed by Japan Display Inc filed Critical Japan Display Inc
Priority to JP2014128377A priority Critical patent/JP6433169B2/ja
Priority to US14/734,253 priority patent/US9536907B2/en
Publication of JP2016009719A publication Critical patent/JP2016009719A/ja
Publication of JP2016009719A5 publication Critical patent/JP2016009719A5/ja
Application granted granted Critical
Publication of JP6433169B2 publication Critical patent/JP6433169B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6723—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device having light shields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6706—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device for preventing leakage current 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6731—Top-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon

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  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2014128377A 2014-06-23 2014-06-23 薄膜半導体装置 Active JP6433169B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2014128377A JP6433169B2 (ja) 2014-06-23 2014-06-23 薄膜半導体装置
US14/734,253 US9536907B2 (en) 2014-06-23 2015-06-09 Thin film semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014128377A JP6433169B2 (ja) 2014-06-23 2014-06-23 薄膜半導体装置

Publications (3)

Publication Number Publication Date
JP2016009719A JP2016009719A (ja) 2016-01-18
JP2016009719A5 JP2016009719A5 (enExample) 2017-07-06
JP6433169B2 true JP6433169B2 (ja) 2018-12-05

Family

ID=55017604

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014128377A Active JP6433169B2 (ja) 2014-06-23 2014-06-23 薄膜半導体装置

Country Status (2)

Country Link
US (1) US9536907B2 (enExample)
JP (1) JP6433169B2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106252356B (zh) * 2016-08-12 2019-01-04 武汉华星光电技术有限公司 一种阵列基板及显示面板
KR102833463B1 (ko) 2016-10-11 2025-07-11 삼성디스플레이 주식회사 표시 장치
CN110226121B (zh) * 2017-02-01 2022-09-30 索尼公司 显示装置和投影显示设备
CN108461538B (zh) * 2018-03-29 2020-03-10 京东方科技集团股份有限公司 薄膜晶体管及其制备方法和控制方法、显示面板和装置
CN115188831B (zh) 2022-09-09 2022-12-23 惠科股份有限公司 薄膜晶体管结构、显示面板以及显示装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11126904A (ja) 1997-10-22 1999-05-11 Toshiba Corp 薄膜トランジスタ装置及び薄膜トランジスタ装置の製造方法
JP2004151546A (ja) * 2002-10-31 2004-05-27 Sharp Corp アクティブマトリクス基板および表示装置
JP2007188936A (ja) * 2006-01-11 2007-07-26 Epson Imaging Devices Corp 表示装置
JP5003366B2 (ja) * 2007-09-10 2012-08-15 セイコーエプソン株式会社 電気光学装置及びその製造方法、並びに電子機器
JP5157783B2 (ja) * 2008-09-25 2013-03-06 セイコーエプソン株式会社 電気光学装置及び電子機器
JP5323604B2 (ja) 2009-07-30 2013-10-23 株式会社ジャパンディスプレイ 表示装置及びその製造方法

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Publication number Publication date
JP2016009719A (ja) 2016-01-18
US20160005880A1 (en) 2016-01-07
US9536907B2 (en) 2017-01-03

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