JP6423294B2 - Laser processing apparatus and processing method - Google Patents

Description

  The present invention relates to a laser processing apparatus and a processing method, and more particularly to a laser processing apparatus and a processing method capable of monitoring a substrate and selectively using a laser wavelength.

  Generally, various patterns such as circuits are formed on a flat panel display such as a semiconductor wafer or a liquid crystal display (LCD). For example, a flat panel display includes an array substrate, a counter substrate, a liquid crystal layer, and the like. In particular, the array substrate includes a plurality of pixel electrodes arranged in a matrix and a plurality of signals arranged along a plurality of scanning lines and columns arranged along the rows of the plurality of pixel electrodes. A line is formed.

  On the other hand, defects such as overlapping of electric signal lines may occur in the manufacturing process of the array substrate. When such a defect occurs, a desired image cannot be formed on the substrate. For this reason, the overlapping signal lines must be cut so as not to overlap. This process is called “repair”.

  The repair process using the conventional repair device is as follows. First, a substrate is placed on a stage, and a laser beam is irradiated onto the substrate based on information on a defect area input by an external inspection apparatus. The laser beam thus irradiated cuts a predetermined portion of the defect area. Subsequently, the worker confirms the repaired area using a separate image unit.

  However, in the case of the conventional repair process, the repaired area of the substrate can be confirmed only after the worker performs the repair work. That is, when the repair device mistakenly repairs an area having no defect, it cannot be confirmed immediately. For this reason, even if the repair process is performed in an area having no defect, it is difficult to take a quick response to this. On the other hand, in the repair process, it is necessary to use laser beams having different wavelengths depending on the material of the substrate or the pattern on the substrate. Conventional repair apparatuses cannot selectively use laser beams having different wavelengths. For this reason, there exists a possibility that the board | substrate which can perform a repair process, or the pattern on this board | substrate will be restricted.

Korean Published Patent No. 2013-0034474

  The objective of this invention is providing the laser processing apparatus and processing method which can selectively use the wavelength of a laser.

  Another object of the present invention is to provide a laser processing apparatus and a processing method capable of monitoring a substrate in real time.

  Still another object of the present invention is to provide a laser processing apparatus and a processing method capable of performing work on a substrate with high accuracy and improving work efficiency.

  In order to achieve the above object, the present invention provides a laser processing apparatus for processing a substrate, which generates a laser beam, splits the laser beam, and a plurality of laser beam traveling directions. A scanner unit that has a scanner and provides an optical path through which the laser beam passes; a guide unit that is disposed between the laser unit and the scanner unit and selectively guides the branched laser beam to the scanner; and the scanner unit A laser processing apparatus including an irradiation unit that irradiates a substrate with a laser beam that has passed through and an imaging unit that images the substrate is provided.

  The scanner unit includes a first scanner that adjusts a traveling direction of a laser beam having a wavelength of at least a part of the laser beam, and a laser beam having a wavelength different from that of the laser beam whose traveling direction is adjusted by the first scanner. And a second scanner that adjusts the traveling direction.

  At least one of the first scanner and the second scanner may adjust the traveling directions of laser beams having a plurality of different wavelengths.

  The guide unit is provided in an amount corresponding to the number of branches of the laser beam, and includes a circuit breaker that opens and closes an optical path of the laser beam, between the circuit breaker and the first scanner, and between the circuit breaker and the second scanner. And a laser mirror that guides the laser beam that has passed through the circuit breaker to the scanner.

  The irradiation unit may include an objective lens that focuses the laser beam on the substrate.

  The imaging unit may include a camera that images the substrate, an illuminator that illuminates the substrate, and an autofocuser that corrects the focus of the camera.

  The laser device of the present invention operates the laser unit, controls the operation of the guide unit according to the material of the substrate or the pattern on the substrate, and is used in the scanner unit according to the wavelength of the laser beam that has passed through the guide unit. A control unit that selects a scanner to be operated may be further provided.

  The control unit may adjust the photographing magnification of the camera according to the degree of fineness of the pattern on the substrate.

  The camera may enlarge the imaging magnification with respect to the substrate by 5 to 20 times when the control unit reviews the substrate, and enlarge the imaging magnification with respect to the substrate by 20 to 50 times during the substrate processing operation.

  In order to achieve the above object, the present invention provides a laser processing method for processing a substrate with a laser, comprising: a step of generating a laser beam; a step of selecting a wavelength of the laser beam; Provided is a laser processing method including a process of irradiating a substrate with a laser beam and monitoring the substrate, and a process of interrupting a laser processing operation if a defect occurs in the processing of the substrate.

  In the process of selecting the wavelength of the laser beam, the wavelength of the laser beam may be selected according to the material of the substrate or the pattern on the substrate.

  In the process of photographing the substrate, the photographing magnification may be adjusted according to the degree of fineness of the pattern on the substrate.

  In the process of imaging the substrate, the imaging magnification may be adjusted according to the type of work on the substrate.

  If a defect occurs in the processing of the substrate, the process of interrupting the laser processing operation may include a process of adjusting the position of the substrate and reprocessing.

  If the material of the pattern on the substrate is a metal film, the first wavelength laser beam is selected, and if the material is an organic film or an indium tin oxide film, the second wavelength laser having a shorter wavelength than the first wavelength laser beam. A beam may be selected.

  Processing the substrate may include repairing a defect in a pattern formed on the substrate.

  According to the present invention, an imaging unit for imaging a substrate is provided, and an operator can check the substrate and the process of processing the substrate in real time. For this reason, even if a defect occurs in the substrate processing, the operator can confirm this in real time and immediately respond to it, so that the work efficiency is improved. In addition, the photographing unit can adjust the photographing magnification according to the degree of miniaturization of the substrate pattern or the type of work. Therefore, when repairing a fine part, it is possible to work with high accuracy by enlarging the photographing magnification.

  Further, according to the embodiment of the present invention, the wavelength of the laser beam can be selectively used. For this reason, since the wavelength of the laser beam can be selected in accordance with the material of the substrate or the pattern on the substrate, the operation can be performed stably. In addition, since laser beams having various wavelengths are selectively used, various substrates and patterns of the substrates can be repaired in one apparatus. For this reason, the equipment can be simplified.

FIG. 1 is a schematic configuration diagram showing a laser processing apparatus according to an embodiment of the present invention. FIG. 2 is a block diagram showing a laser processing apparatus according to an embodiment of the present invention. FIG. 3 is a schematic perspective view showing a state in which the imaging unit in the laser processing apparatus according to the embodiment of the present invention adjusts the imaging magnification according to the substrate processing operation. FIG. 4 is a schematic perspective view showing a state in which the photographing unit in the laser processing apparatus according to the embodiment of the present invention adjusts the photographing magnification according to the degree of pattern miniaturization on the substrate. FIG. 5 is a flowchart showing a laser processing method for a substrate according to an embodiment of the present invention.

  Hereinafter, an embodiment according to the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments described below, and can be realized in various different forms. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art to which this invention belongs. The drawings are exaggerated for the purpose of illustrating the invention in detail, wherein like reference numerals indicate like elements throughout the drawings.

  FIG. 1 conceptually shows a laser processing apparatus according to an embodiment of the present invention, FIG. 2 shows a configuration of the laser processing apparatus according to an embodiment of the present invention, and FIG. 3 shows an embodiment of the present invention. FIG. 4 shows how the photographing unit adjusts the photographing magnification according to the substrate processing operation, and FIG. 4 shows how the photographing unit according to one embodiment of the present invention adjusts the photographing magnification according to the degree of pattern miniaturization on the substrate. FIG. 5 shows a flowchart of a laser processing method for a substrate according to an embodiment of the present invention.

  Referring to FIGS. 1 and 2, a laser processing apparatus 100 according to an embodiment of the present invention is a laser processing apparatus that processes a substrate 10, and a laser unit that generates a laser beam and branches the generated laser beam. 110, a plurality of scanners that adjust the traveling direction of the laser beam, a scanner unit 130 that provides an optical path through which the laser beam passes, and a laser unit 110 and the scanner unit 130 that are disposed and branched. A guide unit 120 that selectively guides the laser beam to the scanner, an irradiation unit 140 that irradiates the substrate 10 with the laser beam that has passed through the scanner unit 130, and an imaging unit 150 that images the substrate 10. The laser processing apparatus 100 includes a control unit 160 that controls the laser unit 110, the guide unit 120, the scanner unit 130, the irradiation unit 140, and the imaging unit 150.

  At this time, the laser processing apparatus 100 may be an apparatus that repairs a defect in a pattern formed on the substrate 10. For example, the criterion for determining the quality of the substrate 10 may be the number of defective cells included in the substrate 10. Bad cells are divided into bright spot cells and dark spot cells, and the number of allowed bright spot cells is more severe than the number of dark spot cells. For this reason, the bright spot cell can be darkened to increase the yield of the substrate. Accordingly, when the substrate 10 is repaired by darkening the bright spot cell due to the foreign matter, the black matrix material is melted by irradiating the black matrix with a laser, and the bright spot cell is darkened by guiding the melted black matrix material to the foreign matter side. Can be made. However, the present invention is not limited to this, and can be applied to various laser processing operations.

  When processing the substrate 10, the substrate 10 is placed on the stage 1. The laser processing apparatus 100 is supported by a gantry (not shown) and processes the substrate 10 on the stage 1 while moving. On the other hand, when the stage 1 is movable, the stage 1 moves the substrate 10 from the lower side of the laser processing apparatus 100 to a region where the laser is irradiated, and the substrate processing step is performed. However, the present invention is not limited to this, and the substrate 10 may be processed by moving the substrate 10 or the laser processing apparatus 100 using various methods.

  The laser unit 110 simultaneously oscillates a plurality of laser beams having different wavelengths using a single source. The laser unit 110 includes a laser generator (not shown) that generates a laser beam, and a laser oscillator (not shown) that divides the generated laser beam to oscillate a plurality of laser beams having different wavelengths. For example, in the present embodiment, an infrared (IR) laser beam (wavelength range of 780 nm or more), a visible light laser (wavelength range of 380 to 780 nm), and an ultraviolet (UV: Ultraviolet) laser beam (wavelength range). And oscillates three types of lasers simultaneously. For this reason, three laser beams having different wavelengths can be selectively used. However, the present invention is not limited to this, and the laser unit 110 may include various laser sources. The type of laser beam to be branched and the number of laser beams to be oscillated are not limited to this, and can be variously changed.

  The guide unit 120 includes a circuit breaker 122 that blocks the optical path of the laser beam. The guide unit 120 may include an attenuator 121, a laser mirror 123 that reflects the laser beam that has passed through the circuit breaker 122 to the scanner unit 130, and a size adjuster 124.

  The circuit breakers 122 are arranged in an amount corresponding to the number of laser beams to be oscillated or in accordance with the number of laser beams to be branched. For example, in the present embodiment, the circuit breaker 122 includes a first circuit breaker 122a disposed in the optical path of the infrared laser beam, a second circuit breaker 122b disposed in the optical path of the visible light laser beam, and ultraviolet light. And a third circuit breaker 122c disposed in the optical path of the laser beam. When the circuit breaker 122 passes the laser beam, the laser beam is guided to the scanner unit 130 and irradiated onto the substrate 10. When the circuit breaker 122 blocks the optical path of the laser beam, the laser beam does not reach the scanner unit 130, so that the laser beam is not irradiated onto the substrate 10.

  For example, an infrared laser beam or a visible laser beam is used when the pattern formed on the substrate 10 is a metal film, and an ultraviolet laser beam is used when the pattern on the substrate 10 is an organic film. When the pattern on the substrate 10 is an indium tin oxide (ITO) film, a deep ultraviolet (DUV) laser beam (wavelength range of 300 nm or less) is selected and used. If the pattern on the substrate 10 is a metal film and an infrared laser beam is selected and used, the optical path of the infrared laser beam is opened by the first circuit breaker 122a, and the second circuit breaker 122b and the third circuit The optical path between the visible light laser beam and the ultraviolet laser beam is closed by the circuit breaker 122c. Thereby, only the infrared laser beam reaches the scanner unit 130 and is irradiated onto the substrate 10. In this way, the substrate 10 can be processed by selecting a laser beam in accordance with the pattern material on the substrate 10. However, the number of circuit breakers 122 provided is not limited to this, and can be variously changed.

  The attenuator 121 is disposed in the optical path of the laser beam and adjusts the output of the laser beam oscillated from the laser unit 110. The attenuators 121 are provided in an amount corresponding to the number of laser beams to be oscillated or an amount corresponding to the number of laser beams to be branched. For example, in the present embodiment, the attenuator 121 includes a first attenuator 121a, a second breaker 122b, and a laser unit 110 disposed between the first circuit breaker 122a and the laser unit 110. A second attenuator 121b disposed therebetween, and a third attenuator 121c disposed between the third circuit breaker 122c and the laser unit 110. For this reason, the output is adjusted while the laser beam passes through each attenuator 121.

  The laser mirror 123 is disposed between the circuit breaker 122 and the scanner unit 130 and plays a role of guiding the laser beam that has passed through the circuit breaker 122 to the scanner unit 130. For example, in this embodiment, the laser mirror 123 includes a first laser mirror 123a, a second circuit breaker 122b, and a second circuit breaker 122b, which are disposed between the first circuit breaker 122a and a first scanner 131a described later. The second laser mirror 123b disposed between the second scanner 131b and the third circuit breaker 122c and the second scanner 131b or between the second laser mirror 123b and the second scanner 131b. And a third laser mirror 123c disposed between the two. The first laser mirror 123a can guide the infrared laser beam to the first scanner 131a. The second laser mirror 123b and the third laser mirror 123c can guide the visible laser beam and the ultraviolet laser beam to the second scanner 131b. At this time, the third laser mirror 123c may be a half mirror that transmits the laser beam reflected by the second laser mirror 123b and guides it to the second scanner 131b while reflecting the ultraviolet laser beam. However, the number of laser mirrors 123 to be arranged, the positions to be arranged, and the types of mirrors are not limited to these, and can be variously changed according to the structure of the laser processing apparatus 100.

  The size adjuster 124 is disposed between the laser mirror 123 and the scanner unit 130. The size adjuster 124 serves to adjust the beam size of the laser beam reflected by the laser mirror 123. The size adjusters 124 are provided in an amount corresponding to the number of scanners 131 provided. For example, in the present embodiment, the size adjuster 124 includes a first size adjuster 124a, a second breaker 122b, and a second interrupter disposed between the first breaker 122a and the first scanner 131a. And a second size adjuster 124b disposed between the second scanner 131b or between the third circuit breaker 122c and the second scanner 131b. However, the present invention is not limited to this, and the components of the guide 120 may be used in various arrangements or combinations.

  The scanner unit 130 includes a plurality of scanners 131 that adjust the traveling direction of the laser beam, and a relay lens 133 that guides the laser beam that has passed through the scanner 131 so as to fall within a recognition range of an objective lens 141 of the irradiation unit 140 described later. Is provided. The scanner unit 130 may include a focus lens 132 and a scanner mirror 134.

  Each scanner 131 guides the laser beam to a desired optical path. Each scanner 131 may be a mirror that reflects a laser beam, and the traveling direction of the laser beam may be arbitrarily changed by adjusting the angle of the mirror. That is, the scanner 131 processes the substrate 10 by reflecting the laser beam at various angles.

  In the present embodiment, the scanner 131 adjusts the traveling direction of a first scanner 131a that adjusts the traveling direction of a laser beam of at least some of the plurality of laser beams, and the first scanner 131a. A second scanner 131b that adjusts the traveling direction of another laser beam having a wavelength different from that of the laser beam is provided. Further, at least one of the first scanner 131a and the second scanner 131b adjusts the traveling directions of laser beams having a plurality of wavelengths having different wavelengths.

  For example, a coating layer that reflects an infrared laser beam is formed on the first scanner 131a, and a coating layer that reflects both a visible light laser beam and an ultraviolet laser beam is formed on the second scanner 131b. . Therefore, when an infrared laser beam is used, the guide unit 120 guides the infrared laser beam to the first scanner 131a. When a visible light laser beam or an ultraviolet laser beam is used, the guide unit 120 uses the visible light laser beam or the ultraviolet light. The laser beam can be guided to the second scanner 131b.

  The coating layer formed on the scanner 131 is limited in the wavelength range of the laser beam that can be reflected. That is, since the wavelength difference between the infrared laser beam and the ultraviolet laser beam is large, it cannot be reflected by one coating layer. On the other hand, the visible light laser beam and the ultraviolet laser beam have a relatively small wavelength difference, and therefore can be reflected by one coating layer. For this reason, when a laser beam having a large wavelength difference is selectively used, the optical path of the laser beam can be adjusted by providing a plurality of scanners 131. Further, since one scanner can reflect a plurality of laser beams having a small wavelength difference, the number of scanners arranged is reduced as compared with a case where all scanners that reflect laser beams of respective wavelengths are provided. And the equipment can be simplified. However, the present invention is not limited to this, and the number of scanners 131 arranged according to the wavelength difference of the laser beam to be used can be variously changed.

  The focus lens 132 is disposed between the guide unit 120 and the scanner 131. The focus lens 132 is provided so as to be movable up and down, and adjusts the size at which the laser beam is focused on the substrate while moving up and down. That is, the focus lens 132 plays a role of narrowing the laser beam reflected by the laser mirror 123 into a thin laser beam suitable for processing. The focus lens 132 is provided in an amount corresponding to the number of the scanners 131 provided. For example, in this embodiment, the focus lens 132 is provided between the first focus lens 132a disposed between the guide unit 120 and the first scanner 131a, and between the guide unit 120 and the second scanner 131b. And a second focus lens 132b.

  The relay lens 133 guides the reflected laser beam so that the laser beam reflected by the scanner 131 can travel reliably in a desired direction without spreading. That is, the relay lens 133 places the laser beam that has passed through the scanner 131 within the incident range of an objective lens 141 described later. Conventionally, the laser beam reflected through the scanner 131 is immediately incident on the objective lens 141. As a result, due to physical restrictions between the scanner 131 and the objective lens 141, a space in which the photographing unit 150 described later can be disposed cannot be formed. However, in this embodiment, since a space is formed between the scanner 131 and the objective lens 141, even if the distance is increased, the relay lens 133 reflects the laser beam reflected by the scanner 131 to the objective lens 141. Can be within the recognition range. For this reason, a space in which the photographing unit 150 can be disposed can be formed.

  Further, the relay lenses 133 are provided in an amount corresponding to the number of the scanners 131 provided. For example, in the present embodiment, the relay lens 133 is provided between the first relay lens 133a disposed between the first scanner 131a and the objective lens 141, and between the second scanner 131b and the objective lens 141. And a second relay lens 133b provided. Therefore, each relay lens 133 can guide the laser beam reflected by the scanner 131 to the incident range of the objective lens 141.

  The scanner mirror 134 plays a role of reflecting the laser beam in the scanner unit 130. For example, in the present embodiment, the scanner mirror 134 is provided between the first scanner mirror 134a disposed between the guide unit 120 and the first scanner 131a, and between the guide unit 120 and the second scanner 131b. A second scanner mirror 134b is provided, and a third scanner mirror 134c is provided between the second scanner 131b and the second relay lens 133b. The first scanner mirror 134a reflects the laser beam that has passed through the guide unit 120 to the first scanner 131a. The second scanner mirror 134b reflects the laser beam that has passed through the guide unit 120 to the second scanner 131b. The third scanner mirror 134c reflects the laser beam reflected by the second scanner 131b toward the second relay lens 133b. However, the number and position of the scanner mirrors 134 are not limited to this, and can be variously changed according to the structure of the laser processing apparatus 100. The constituent elements of the scanner unit 130 are not limited to this, and may be variously arranged or used in combination.

  The irradiation unit 140 includes an objective lens 141 that focuses the laser beam on the substrate 10. The objective lens 141 compresses so that the laser beam has a high energy density. For this reason, the laser beam that has passed through the scanner unit 130 can be processed by the substrate 10 while being compressed by the objective lens 141 and focused on the substrate 10. However, the present invention is not limited to this, and various lenses that can irradiate the substrate 10 with a laser beam can be used.

  The imaging unit 150 is disposed between the relay lens 133 and the objective lens 141. The imaging unit 150 includes a camera 151 that images the substrate 10, an illuminator 153 that illuminates the substrate 10, and an autofocuser 154 that corrects the focus of the camera 151. Note that the photographing unit 150 may include a cut filter 156, an image imager 152, and a photographing mirror 155.

  As the camera 151, a charge-coupled device camera (CCD: Charge-Coupled Device Camera) can be used. Such a camera 151 photographs the substrate 10 on the stage 1 or the process in which the substrate 10 is processed. That is, when the illuminator 153 generates light, the illumination light is guided to the substrate 10, and the illumination light reflected by the substrate 10 is guided to the camera 151 by the image imager 152 to photograph the substrate 10. In addition, the camera 151 adjusts the shooting magnification with respect to the substrate 10. For this reason, the operator can monitor the substrate 10 in real time, and even if a problem occurs during the substrate processing operation, this can be immediately confirmed and taken. However, the present invention is not limited to this, and various cameras can be used.

  The automatic focus unit 154 corrects the focus of the image of the photographing unit 150 so that the focus of the image in the photographing unit 150 is accurately positioned on the surface of the substrate 10 to be worked on. That is, for example, when the surface of the substrate 10 is not flat, if the imaging region of the substrate 10 is moved, the height of the region captured before the movement differs from the height of the region captured after the movement. The focus of the image may change. For this reason, since the autofocus device 154 corrects the focus of the image of the imaging unit 150, the operator can easily monitor the substrate 10 using the imaging unit 150.

  The cut filter 156 is disposed between the camera 151 and the image imager 152 and plays a role of selectively blocking the wavelength of the laser incident on the camera 151.

  The photographing mirror 155 includes a first photographing mirror 155a disposed between the camera 151 and the objective lens 141 or between the first relay lens 133a and the objective lens 141, and a third photographing mirror 155c described later. A second photographing mirror 155b disposed between the objective lens 141 or between the first photographing mirror 155a and the objective lens 141, and a fourth photographing mirror 155d and a second photographing mirror 155b described later. Or a third imaging mirror 155c disposed between the second relay lens 133b and the second imaging mirror 155b, and between the third imaging mirror 155c and the illuminator 153 or a third imaging mirror. And a fourth imaging mirror 155d disposed between 155c and the autofocus device 154.

  The first imaging mirror 155a guides the reflected light reflected by the substrate 10 by the light from the illuminator 153 to the camera 151, while transmitting the laser beam that has passed through the first relay lens 133a to the objective lens 141. . The second imaging mirror 155b transmits the laser beam transmitted through the first imaging mirror 155a to the objective lens 141, and is reflected by the laser beam transmitted through the third imaging mirror 155c or the third imaging mirror 155c. The light is reflected by the objective lens 141.

  The third photographing mirror 155c transmits the laser beam that has passed through the second relay lens 133b to the second photographing mirror 155b, and the illumination light reflected by the fourth photographing mirror 155d is transmitted to the second photographing mirror 155b. Reflect. The fourth imaging mirror 155d reflects the illumination light of the illuminator 153 to the third imaging mirror 155c and transmits the reflected light reflected by the substrate 10 to the autofocus device 154. However, the number and position of the photographing mirrors 155 are not limited to these, and can be variously changed according to the structure of the laser processing apparatus 100. In addition, the component of the imaging | photography part 150 is not limited to this at all, It is arrange | positioned variously or used in combination.

  The control unit 160 operates the laser unit 110 to control the operation of the guide unit 120 according to the substrate 10 or the pattern material on the substrate 10. Further, the control unit 160 selects the scanner 131 to be used in the scanner unit 130 according to the wavelength of the laser beam that has passed through the guide unit 120.

  For example, the control unit 160 causes the laser unit 110 to simultaneously oscillate infrared laser beams, visible light laser beams, and ultraviolet laser beams having different wavelengths. When the pattern material on the substrate 10 is indium tin oxide (ITO), an ultraviolet laser beam is selected from the laser beams. That is, the control unit 150 activates the first circuit breaker 122a on the optical path of the infrared laser beam and the second circuit breaker 122b on the optical path of the visible light laser beam in the guide unit 120, thereby operating each laser. Block the beam path. On the other hand, the third circuit breaker 122c on the optical path of the ultraviolet laser beam is opened, and the scanner 131 to be used is selected by leading to the second scanner 131b that reflects the ultraviolet laser beam.

  The camera 151 uses the control unit 160 to adjust the shooting magnification according to the type of work. For example, when reviewing the substrate 10, the shooting magnification for the substrate 10 is automatically increased to 5 to 20 times, and when processing the substrate 10, the shooting magnification for the substrate 10 is automatically increased to 20 to 50 times. . Reviewing the substrate 10 may be an operation of finding defects on the substrate 10 without irradiating the laser beam on the substrate 10, and the processing operation of the substrate 10 may be performed on the substrate 10 with a laser beam. It may be that the work such as repair is performed by irradiating. Referring to FIG. 3, a region A (FIG. 3A) where the substrate 10 is imaged during the review and a region B where the substrate 10 is imaged during the processing of the substrate 10 (FIG. 3B). May be different. That is, when reviewing, a larger area is photographed at a low magnification of the substrate 10, so that the operator can quickly identify a defective area on the substrate 10 as compared with the case of photographing a narrow area by increasing the photographing magnification. Can be found. On the other hand, when the substrate 10 is processed with the laser beam R, a narrow region of the substrate 10 is photographed with a larger magnification. For this reason, the process in which the work is performed can be observed in detail, and the work can be performed with high accuracy. However, the present invention is not limited to this, and there are various types of work, and the shooting magnification of the camera 151 that is adjusted according to the type of work can be changed variously.

  The control unit 160 automatically adjusts the imaging magnification of the camera 151 that images the substrate 10 in accordance with the fineness of the pattern on the substrate 10. For example, referring to FIG. 4, in the substrate 10, a region C in which a pattern to be photographed has a low degree of fineness (a simple pattern) and a region D in which a pattern to be photographed has a high degree of miniaturization (a complicated pattern). As described above, the complexity of the fine pattern of the imaging region may be different. That is, as shown in FIG. 4 (a), a large pattern is formed in the C region, and miniaturization is relatively easy. On the other hand, as shown in FIG. 4 (b), the D region is fine. A pattern is formed, and it is relatively difficult to miniaturize. When the degree of pattern miniaturization is low, the magnification of the wide area of the substrate 10 is reduced to photograph a wider area of the substrate 10 (FIG. 4A). On the other hand, if the degree of pattern miniaturization is high, the magnification of the narrow region of the substrate 10 is further increased to photograph the narrow region (FIG. 4B). For this reason, the work can be performed with high accuracy by automatically adjusting the photographing magnification according to the fineness of the pattern on the substrate 10.

  In addition, the control unit 160 automatically adjusts the shooting magnification of the camera 151 in accordance with the degree of pattern miniaturization on the substrate 10 and the work content. For example, when the degree of micropatterning on the substrate 10 is low, the imaging magnification is adjusted to 5 to 10 times for the review, and the imaging magnification is adjusted to 20 to 35 times for the processing of the substrate 10. When the pattern on the substrate 10 is highly refined, the imaging magnification is adjusted to 10 to 20 times during the review, and the imaging magnification is adjusted to 35 to 50 times during the processing of the substrate 10. For this reason, by automatically adjusting the photographing magnification according to the pattern state of the substrate 10 and the work contents corresponding thereto, the work speed can be improved and the work can be performed with high accuracy. However, the imaging magnification of the substrate 10 is not limited to this, and can be variously changed.

  Hereinafter, a laser processing method according to an embodiment of the present invention will be described.

  Referring to FIG. 5, a laser processing method according to an embodiment of the present invention is a laser processing method for processing a substrate with a laser, and includes a step of generating a laser beam (S100) and a wavelength of the generated laser beam. In the process of selecting (S200), imaging the substrate, irradiating the imaged substrate with a laser beam and processing it, and monitoring the processed substrate (S300), and if the substrate processing fails, the laser A process of interrupting the processing operation (S400). At this time, processing the substrate may be repairing a defect of a pattern formed on the substrate.

  When the control unit 160 operates the laser unit 110, the laser unit 110 generates a laser beam, branches the generated laser beam, and simultaneously oscillates laser beams having different wavelengths. For example, in this embodiment, an infrared laser beam, a visible light laser beam, and an ultraviolet laser beam are oscillated simultaneously in one source.

  Next, the control unit 160 selects a laser beam to be used according to the material of the substrate 10 or the pattern on the substrate 10. That is, if the pattern material of the substrate 10 is a metal film, the first wavelength laser beam is selected. If the material is an organic film or an indium tin oxide (ITO) film, the wavelength is shorter than that of the first wavelength laser beam. A second wavelength laser beam is selected. For example, when the material of the pattern on the substrate 10 is a metal film and an infrared laser beam is selected and used, the control unit 160 controls the circuit breaker 122 to open the optical path of the infrared laser beam, and the visible light laser beam. The optical path between the laser beam and the ultraviolet laser beam is closed. The infrared laser beam that has passed through the first circuit breaker 122a is reflected by the first laser mirror 123a and guided to the first scanner 131a. At this time, the controller 160 controls the operation of the attenuator 121 and the size adjuster 124 to adjust the output of the laser beam and the size of the laser beam so as to be suitable for work such as repair.

  On the other hand, if the material of the substrate 10 pattern is an indium tin oxide (ITO) film, an ultraviolet laser beam having a shorter wavelength than the infrared laser beam is selected and used. In this case, the control unit 160 controls the circuit breaker 122 to open the optical path of the ultraviolet laser beam, while closing the optical path of the infrared laser beam and the ultraviolet laser beam. For this reason, the ultraviolet laser beam is guided to the second scanner 131b. However, the present invention is not limited to this, and laser beams having various wavelengths are selected and used according to the material of the substrate 10 pattern.

  The scanner 131 is limited in the types of laser beams that can be reflected. For this reason, when various laser beams are used, it is necessary to provide a plurality of scanners 131 capable of reflecting them. The scanner 131 guides a laser beam corresponding to the scanners 131a and 131b that can reflect according to the wavelength of the laser beam. That is, the scanners 131a and 131b are selected and used according to the wavelength of the laser beam. The scanner 131 guides the laser beam to a desired optical path. The control unit 160 adjusts the angle of the scanner 131 to arbitrarily change the traveling direction of the laser beam reflected by the scanner 131. That is, the scanner 131 can perform various laser processing operations such as repairing defects existing on the substrate 10 by reflecting the laser beam at various angles. Note that the control unit 160 adjusts the position of the focus lens 132 to make the laser beam a thin laser beam suitable for processing.

  The laser beam reflected by the scanner 131 is guided through the relay lens 133 so as to be within the incident range of the objective lens 141 of the irradiation unit 140. The objective lens 141 compresses the laser beam, causes the compressed laser beam to focus on the substrate 10, and performs processing on the substrate 10.

  The imaging unit 150 images the substrate 10 or a process in which the substrate 10 is processed. The imaging unit 150 may start imaging on the substrate 10 before the laser beam is generated, may start imaging on the substrate 10 when the laser beam is irradiated on the substrate 10, and after processing the substrate 10. You may start shooting. That is, the imaging of the substrate 10 and the laser processing operation may be performed sequentially or in a different order. For this reason, when the operator desires, monitoring of the substrate 10 may be started.

  The controller 160 adjusts the shooting magnification of the camera 151 according to the degree of pattern miniaturization on the substrate 10. For example, when photographing a pattern region on the substrate 10 with a high degree of pattern miniaturization, the photographing magnification can be automatically enlarged to perform work with high accuracy. On the other hand, when photographing a cell region on the substrate 10 with a low degree of pattern miniaturization, a wider region can be monitored by setting the photographing magnification smaller than when the pattern region is enlarged.

  The control unit 160 adjusts the photographing magnification according to the work content for the substrate 10. For example, when reviewing the substrate 10, a wide area of the substrate 10 is enlarged and observed, and when processing the substrate 10, a narrow area of the substrate 10 is enlarged and observed. For this reason, the defect of the board | substrate 10 can be found quickly in the case of a review, and on the other hand, the operation | work can be performed with sufficient precision in the process of the board | substrate 10.

  In addition, the control unit 160 automatically adjusts the shooting magnification of the camera 151 in accordance with the degree of pattern miniaturization on the substrate 10 and the work content. For example, when the degree of micropatterning on the substrate 10 is low, the imaging magnification is adjusted to 5 to 10 times during the review, while the imaging magnification is adjusted to 20 to 35 times during the processing of the substrate 10. When the pattern on the substrate 10 is highly miniaturized, the imaging magnification is adjusted to 10 to 20 times during the review, while the imaging magnification is adjusted to 35 to 50 times when the substrate 10 is processed. For this reason, by automatically adjusting the photographing magnification according to the pattern state of the substrate 10 and the work for it, the work progress speed can be improved and the work can be performed with high accuracy. However, the imaging magnification with respect to the substrate 10 is not limited to this, and can be variously changed.

  If the position of the substrate 10 is wrong or incorrect coordinate information for a defect in the pattern of the substrate 10 is input to the laser processing apparatus 100, the laser beam is erroneously irradiated to a region having no defect on the substrate 10 to process the substrate. There is a risk that defects will occur. Since the operator monitors the substrate 10 via the photographing unit 150, the operator can immediately confirm this. For this reason, the operator can interrupt the laser processing operation. Thereafter, the position of the substrate 10 can be adjusted to the correct position, and the substrate 10 can be reprocessed by irradiating the defective portion with a laser beam. For this reason, if a defect occurs in the processing of the substrate 10, it can be dealt with promptly, so that the defect rate is reduced and work efficiency is improved.

  As described above, the embodiment of the present invention has been described by way of example to repair a defect of a substrate pattern. However, the present invention is not limited to this and is applied to various laser processing processes. Is possible.

  As described above, in the detailed description of the present invention, specific embodiments have been described. However, various modifications can be made without departing from the scope of the present invention. Accordingly, the scope of the present invention should not be defined by being limited to the described embodiments, but should be defined not only by the claims described below, but also by equivalents thereof.

DESCRIPTION OF SYMBOLS 100 Laser processing apparatus 110 Laser part 120 Guide part 130 Scanner part 140 Irradiation part 150 Imaging part 160 Control part

Claims (11)

A laser processing apparatus for processing a substrate,
A laser unit that generates a laser beam and branches the laser beam;
A scanner unit having a plurality of scanners for adjusting the traveling direction of the laser beam, and providing an optical path through which the laser beam passes;
A guide unit that is disposed between the laser unit and the scanner unit and selectively guides the branched laser beam to the scanner;
An irradiation unit that irradiates the substrate with a laser beam that has passed through the scanner unit;
A region in which the substrate is imaged when the substrate is irradiated with a laser beam by automatically adjusting the imaging magnification for the substrate according to any one of the degree of miniaturization of the substrate and the type of work on the substrate. An imaging unit for imaging the substrate so that the size of the substrate is smaller than the size of the area for imaging the substrate when finding defects on the substrate;
If the substrate pattern material is a metal film by controlling the operation of the laser section and the guide section, a laser beam having a first wavelength is selected. If the material is an organic film or an indium tin oxide film, the first pattern is selected. A control unit for selecting a laser beam having a second wavelength shorter than the laser beam having a wavelength of
Equipped with a,
The photographing unit includes a camera for photographing a substrate,
The laser processing apparatus that have a and cuttable cut filter the wavelength of the laser beam incident on the camera. The scanner unit is
A first scanner for adjusting a traveling direction of a laser beam having a wavelength of at least a part of the laser beam;
A second scanner for adjusting a traveling direction of a laser beam having a wavelength different from that of the laser beam whose traveling direction is adjusted by the first scanner;
The laser processing apparatus of Claim 1 which has these.   3. The laser processing apparatus according to claim 2, wherein at least one of the first scanner and the second scanner adjusts traveling directions of laser beams having a plurality of different wavelengths. The guide part is
A circuit breaker which is arranged in an amount corresponding to the number of branches of the laser beam, and which opens and closes the optical path of the laser beam;
A laser mirror that is disposed between the circuit breaker and the first scanner and between the circuit breaker and the second scanner and guides a laser beam that has passed through the circuit breaker to the scanner;
The laser processing apparatus of Claim 3 which has these.   The laser processing apparatus according to claim 1, wherein the irradiation unit includes an objective lens that focuses the laser beam on the substrate. The imaging unit,
And illuminator shed lighting in front Stories substrate,
An autofocuser that corrects the focus of the camera;
The laser processing apparatus according to claim 1, further comprising :   The laser processing apparatus according to claim 1, wherein the control unit selects a scanner to be used in the scanner unit according to a wavelength of a laser beam that has passed through the guide unit.   The laser processing according to claim 6, wherein the camera enlarges a photographing magnification with respect to the substrate by 5 to 20 times during the review of the substrate, and enlarges a photographing magnification with respect to the substrate by 20 to 50 times during the processing operation of the substrate. apparatus. A laser processing method for processing a substrate with a laser,
A process of generating a laser beam;
Selecting the wavelength of the laser beam;
Photographing the substrate, irradiating the substrate with the laser beam, processing the substrate with the camera while cutting the wavelength of the laser beam incident on the camera ;
If a defect occurs in the processing of the substrate, the process of interrupting the laser processing operation,
Including
In the process of imaging the substrate, the imaging magnification for the substrate is automatically adjusted according to any one of the degree of miniaturization of the substrate and the type of work on the substrate, and the substrate is irradiated with a laser beam. The size of the area for imaging the substrate includes a step of making the substrate smaller than the area for imaging the substrate when finding defects on the substrate ,
In the process of selecting the wavelength of the laser beam, the wavelength of the laser beam is selected according to the material of the substrate or the pattern on the substrate,
If the material of the pattern is a metal film, a first wavelength laser beam is selected, and if the material is an organic film or an indium tin oxide film, a second wavelength laser beam having a shorter wavelength than the first wavelength laser beam. The laser processing method including the process of selecting. If a defect occurs in the processing of the substrate, the process of interrupting the laser processing operation,
The laser processing method according to claim 9, further comprising a step of adjusting the position of the substrate and performing reprocessing. Processing the substrate comprises:
The laser processing method according to claim 9, comprising repairing a defect of a pattern formed on the substrate.

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