JP6414801B2 - 欠陥検査方法 - Google Patents

欠陥検査方法 Download PDF

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Publication number
JP6414801B2
JP6414801B2 JP2015097366A JP2015097366A JP6414801B2 JP 6414801 B2 JP6414801 B2 JP 6414801B2 JP 2015097366 A JP2015097366 A JP 2015097366A JP 2015097366 A JP2015097366 A JP 2015097366A JP 6414801 B2 JP6414801 B2 JP 6414801B2
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Japan
Prior art keywords
defect
film
protrusion
silicon nitride
wafer
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JP2015097366A
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Japanese (ja)
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JP2016212009A (ja
JP2016212009A5 (enExample
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佐藤　英樹
英樹 佐藤
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Shin Etsu Handotai Co Ltd
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Shin Etsu Handotai Co Ltd
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  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2015097366A 2015-05-12 2015-05-12 欠陥検査方法 Active JP6414801B2 (ja)

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JP2015097366A JP6414801B2 (ja) 2015-05-12 2015-05-12 欠陥検査方法

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JP2015097366A JP6414801B2 (ja) 2015-05-12 2015-05-12 欠陥検査方法

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JP2016212009A JP2016212009A (ja) 2016-12-15
JP2016212009A5 JP2016212009A5 (enExample) 2017-06-29
JP6414801B2 true JP6414801B2 (ja) 2018-10-31

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI866205B (zh) * 2022-08-04 2024-12-11 日商Ｓｕｍｃｏ股份有限公司 半導體晶圓的評估方法及半導體晶圓的製造方法

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019049387A1 (ja) * 2017-09-11 2019-03-14 株式会社日立ハイテクノロジーズ 欠陥分類装置、検査装置、および検査システム
CN108010863B (zh) * 2017-12-07 2021-10-01 武汉新芯集成电路制造有限公司 凹陷缺陷的检测方法以及用于检测凹陷缺陷的晶圆
KR102060084B1 (ko) * 2018-01-22 2019-12-30 에스케이실트론 주식회사 웨이퍼의 결함 측정 방법
CN109059812B (zh) * 2018-09-11 2020-11-24 太原理工大学 一种精确测量曲面上多层微纳米薄膜厚度的方法
JP7103211B2 (ja) 2018-12-27 2022-07-20 株式会社Sumco 半導体ウェーハの評価方法および製造方法ならびに半導体ウェーハの製造工程管理方法
US12345658B2 (en) 2020-09-24 2025-07-01 Kla Corporation Large-particle monitoring with laser power control for defect inspection
JP7567747B2 (ja) * 2021-10-19 2024-10-16 信越半導体株式会社 シリコン単結晶ウェーハの欠陥の種類の特定方法
KR102728792B1 (ko) * 2022-02-15 2024-11-11 에스케이실트론 주식회사 실리콘 웨이퍼의 미세 입자 결함의 판단 방법
JP7771899B2 (ja) * 2022-09-05 2025-11-18 株式会社Sumco 半導体ウェーハの評価方法、半導体ウェーハの製造方法及び半導体ウェーハ
CN116130377B (zh) * 2023-04-17 2023-09-29 西安奕斯伟材料科技股份有限公司 外延晶圆的缺陷检测方法、装置、系统及其制造方法
JP2025153297A (ja) * 2024-03-29 2025-10-10 株式会社Sumco 半導体ウェーハの評価方法および半導体ウェーハの製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6473203A (en) * 1987-09-14 1989-03-17 Oki Electric Ind Co Ltd Inspection of surface foreign matter
JPH06252230A (ja) * 1993-02-24 1994-09-09 Hitachi Ltd 欠陥検査方法および装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI866205B (zh) * 2022-08-04 2024-12-11 日商Ｓｕｍｃｏ股份有限公司 半導體晶圓的評估方法及半導體晶圓的製造方法

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JP2016212009A (ja) 2016-12-15

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