JP6414801B2 - 欠陥検査方法 - Google Patents
欠陥検査方法 Download PDFInfo
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- JP6414801B2 JP6414801B2 JP2015097366A JP2015097366A JP6414801B2 JP 6414801 B2 JP6414801 B2 JP 6414801B2 JP 2015097366 A JP2015097366 A JP 2015097366A JP 2015097366 A JP2015097366 A JP 2015097366A JP 6414801 B2 JP6414801 B2 JP 6414801B2
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- defect
- film
- protrusion
- silicon nitride
- wafer
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- 230000007547 defect Effects 0.000 title claims description 194
- 238000007689 inspection Methods 0.000 title claims description 90
- 238000000034 method Methods 0.000 title claims description 29
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 81
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 81
- 239000002245 particle Substances 0.000 claims description 58
- 238000009826 distribution Methods 0.000 claims description 55
- 238000001514 detection method Methods 0.000 claims description 53
- 230000015572 biosynthetic process Effects 0.000 claims description 38
- 230000035945 sensitivity Effects 0.000 claims description 22
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 14
- 238000004458 analytical method Methods 0.000 claims description 14
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- 230000005540 biological transmission Effects 0.000 claims description 4
- 238000000921 elemental analysis Methods 0.000 claims description 4
- 238000000605 extraction Methods 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 2
- 238000002360 preparation method Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 76
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 29
- 229910052710 silicon Inorganic materials 0.000 description 29
- 239000010703 silicon Substances 0.000 description 29
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 3
- 238000010884 ion-beam technique Methods 0.000 description 3
- 230000035515 penetration Effects 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 238000007517 polishing process Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000012447 hatching Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 235000010724 Wisteria floribunda Nutrition 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Landscapes
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015097366A JP6414801B2 (ja) | 2015-05-12 | 2015-05-12 | 欠陥検査方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015097366A JP6414801B2 (ja) | 2015-05-12 | 2015-05-12 | 欠陥検査方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016212009A JP2016212009A (ja) | 2016-12-15 |
| JP2016212009A5 JP2016212009A5 (enrdf_load_stackoverflow) | 2017-06-29 |
| JP6414801B2 true JP6414801B2 (ja) | 2018-10-31 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015097366A Active JP6414801B2 (ja) | 2015-05-12 | 2015-05-12 | 欠陥検査方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP6414801B2 (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI866205B (zh) * | 2022-08-04 | 2024-12-11 | 日商Ｓｕｍｃｏ股份有限公司 | 半導體晶圓的評估方法及半導體晶圓的製造方法 |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11442024B2 (en) | 2017-09-11 | 2022-09-13 | Hitachi High-Technologies Corporation | Defect classification device, inspection device, and inspection system |
| CN108010863B (zh) * | 2017-12-07 | 2021-10-01 | 武汉新芯集成电路制造有限公司 | 凹陷缺陷的检测方法以及用于检测凹陷缺陷的晶圆 |
| KR102060084B1 (ko) * | 2018-01-22 | 2019-12-30 | 에스케이실트론 주식회사 | 웨이퍼의 결함 측정 방법 |
| CN109059812B (zh) * | 2018-09-11 | 2020-11-24 | 太原理工大学 | 一种精确测量曲面上多层微纳米薄膜厚度的方法 |
| JP7103211B2 (ja) | 2018-12-27 | 2022-07-20 | 株式会社Sumco | 半導体ウェーハの評価方法および製造方法ならびに半導体ウェーハの製造工程管理方法 |
| JP7567747B2 (ja) * | 2021-10-19 | 2024-10-16 | 信越半導体株式会社 | シリコン単結晶ウェーハの欠陥の種類の特定方法 |
| KR102728792B1 (ko) * | 2022-02-15 | 2024-11-11 | 에스케이실트론 주식회사 | 실리콘 웨이퍼의 미세 입자 결함의 판단 방법 |
| JP2024035995A (ja) * | 2022-09-05 | 2024-03-15 | 株式会社Sumco | 半導体ウェーハの評価方法、半導体ウェーハの製造方法及び半導体ウェーハ |
| CN116130377B (zh) * | 2023-04-17 | 2023-09-29 | 西安奕斯伟材料科技股份有限公司 | 外延晶圆的缺陷检测方法、装置、系统及其制造方法 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6473203A (en) * | 1987-09-14 | 1989-03-17 | Oki Electric Ind Co Ltd | Inspection of surface foreign matter |
| JPH06252230A (ja) * | 1993-02-24 | 1994-09-09 | Hitachi Ltd | 欠陥検査方法および装置 |
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2015
- 2015-05-12 JP JP2015097366A patent/JP6414801B2/ja active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI866205B (zh) * | 2022-08-04 | 2024-12-11 | 日商Ｓｕｍｃｏ股份有限公司 | 半導體晶圓的評估方法及半導體晶圓的製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2016212009A (ja) | 2016-12-15 |
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