JP6407798B2 - Power semiconductor device - Google Patents

Description

  The present invention relates to a power semiconductor device, and more particularly, to a power semiconductor device used for an in-vehicle power conversion device.

  The present invention relates to a power semiconductor device for converting a direct current into an alternating current, and relates to a power semiconductor device that supplies an alternating current to a drive motor of a hybrid vehicle or an electric vehicle.

  In recent years, higher density is required for current converters. Due to the increase in density, the heat generated in the power semiconductor element in the power semiconductor device increases, reaching the heat-resistant temperature of the power semiconductor device and hindering the miniaturization of the power semiconductor device. Therefore, a technology of a double-sided cooling type power semiconductor device that improves the cooling efficiency by cooling the power semiconductor element from both sides is disclosed.

  In order to increase the density of a power conversion device, it is necessary to switch a low-loss power semiconductor element at high speed. However, in order to perform high-speed switching, it is necessary to suppress the surge voltage generated by the wiring inductance generated in the wiring conductor constituting the inverter circuit.

  As a means for reducing the wiring inductance of the inverter circuit that is the cause of the surge voltage, a technique such as Patent Document 1 is known. Patent Document 1 divides a positive electrode terminal and a negative electrode terminal to disperse a current flowing through each terminal, and further arranges a branched positive electrode terminal and a negative electrode terminal alternately to form a positive electrode terminal and a negative electrode terminal. The flowing current flows in the opposite direction, and the action of canceling out the inductances works, so that the wiring inductance of the inverter circuit can be reduced.

JP, 2014-50206, A

  However, in the configuration according to Patent Document 1, when the number of terminals increases due to the branching of the terminals and the positive terminals and the negative terminals are alternately arranged, the conductor part connecting the branched negative terminals and the lower arm of the inverter circuit are configured. Therefore, the length of the intermediate conductor connecting the conductor portion connected to the emitter surface of the power semiconductor element is long. For this reason, the effect of reducing the wiring inductance may be reduced.

  Therefore, a power semiconductor device according to the present invention includes a first power semiconductor element constituting an upper arm of an inverter circuit, a second power semiconductor element constituting a lower arm of the inverter circuit, and a collector electrode of the first power semiconductor element. A first conductor portion connected to the first conductor portion; a fourth conductor portion connected to an emitter electrode of the second power semiconductor element; a first positive electrode terminal and a second positive electrode terminal connected to the first conductor portion; A first negative electrode terminal and a second negative electrode terminal connected to the second conductor portion, wherein the first positive electrode terminal, the second positive electrode terminal, the first negative electrode terminal, and the second negative electrode terminal include a main surface; The first negative electrode terminal has one side surface facing the side surface of the first positive electrode terminal and the other side surface facing one side surface of the second positive electrode terminal. like, The second positive terminal is disposed closer to the fourth conductor part than the first positive terminal, and the second negative terminal is disposed on one side surface. Is disposed so as to face the other side surface of the second positive electrode terminal, and the second negative electrode terminal is further formed by the fourth conductor than the first positive electrode terminal, the second positive electrode terminal, and the first negative electrode terminal. Placed closest to the part.

According to the present invention, the wiring inductance of the inverter main circuit can be reduced.

It is a disassembled perspective view of the circuit part which comprises the series circuit of the upper and lower arms of a power semiconductor device. It is an external appearance perspective view after the circuit part shown by FIG. 1 was assembled. FIG. 3 is an external perspective view illustrating the orientation of the first positive terminal 304, the second positive terminal 305, the first negative terminal 306, and the second negative terminal 307 shown in FIG. FIG. 3 is an external perspective view in which the circuit portion shown in FIG. It is a circuit diagram of the inverter apparatus containing the circuit part shown in FIG. It is an external appearance perspective view of the power semiconductor device which concerns on a 2nd Example. It is a disassembled perspective view of the circuit part which comprises the series circuit of the upper and lower arms of the power semiconductor device which isolate | separated the high electric system terminal and the control terminal. FIG. 8 is an external perspective view after the circuit components shown in FIG. 7 are assembled.

  Hereinafter, an embodiment of a power conversion device according to the present invention will be described with reference to the drawings. In addition, in each figure, the same code | symbol is described about the same element and the overlapping description is abbreviate | omitted.

  FIG. 1 is an exploded perspective view of a circuit part constituting a series circuit of upper and lower arms of a power semiconductor device, and FIG. 2 is an external perspective view after the circuit part shown in FIG. 1 is assembled.

  The first positive terminal 304 and the second positive terminal 305 are connected to the first conductor unit 300. The first positive terminal 304 and the second positive terminal 305 may be formed integrally with the first conductor portion 300.

  The first negative electrode terminal 306 is connected to the fourth conductor portion 303 via the first intermediate conductor portion 309 and the second intermediate conductor portion 310. The second negative electrode terminal 307 is connected to the fourth conductor portion 303 via the first intermediate conductor portion 309 and the second intermediate conductor portion 310.

  The AC terminal 308 is a terminal of the middle point portion (intermediate electrode) that is located near the second power semiconductor element 314 and connected to the second conductor portion 301.

  The first power semiconductor element 313 and the second power semiconductor element 314 have a collector electrode on one surface, an emitter electrode, and a signal electrode on the other surface. The collector electrode of the first power semiconductor element 313 is metal-bonded to the first conductor part 300, and the emitter electrode on the other surface is metal-bonded to the third conductor part 302. The collector electrode of the second power semiconductor element 314 is metal-bonded to the second conductor portion 301, and the emitter electrode on the other surface is metal-bonded to the fourth conductor portion 303.

  One main surface of the first diode 315 is metal-bonded to the first conductor portion 300, and the other surface is metal-bonded to the third conductor portion 302. Further, the first diode 315 is disposed at a position far from the first positive terminal 304, the second positive terminal 305, the first negative terminal 306, and the second negative terminal 307, and is electrically connected in parallel with the first power semiconductor element 313. Is done.

  One main surface of the second diode 316 is metal-bonded to the second conductor portion 301, and the other surface is metal-bonded to the fourth conductor portion 303. Further, the second diode 316 is disposed at a position far from the first positive terminal 304, the second positive terminal 305, the first negative terminal 306, and the second negative terminal 307, and is electrically in parallel with the second power semiconductor element 314. Connected.

  The first intermediate conductor portion 309 connects the first negative electrode terminal 306 and the second negative electrode terminal 307 with a metal bonding material or the like. The second intermediate conductor portion 310 has one end connected to the first intermediate conductor portion 309 and the other end connected to the fourth conductor portion 303. In order to reduce the wiring inductance of the inverter main circuit, in order to make the distance of the second intermediate conductor 310 short, a concave structure 302A is provided in the third conductor portion 302 so as not to disturb the arrangement of the second intermediate conductor 310. Provided.

  The upper arm signal connection terminal 317U is connected to the signal electrode of the first power semiconductor element 313 via a wire (not shown) made of aluminum (Al) or gold (Au). The lower arm signal connection terminal 317L is connected to the signal electrode of the second power semiconductor element 314 via a wire (not shown) made of aluminum (Al) or gold (Au).

  FIG. 3 is an external perspective view illustrating the orientation of the first positive terminal 304, the second positive terminal 305, the first negative terminal 306, and the second negative terminal 307 shown in FIG.

  The terminal main surface 318 is the same surface as the surface on which the first power semiconductor element 313 and the like are metal-bonded to the first conductor portion 300 and the second conductor portion 301 and the surface to which the first intermediate conductor portion 309 is connected. is there.

  The first positive electrode terminal side surface B304B is a surface facing the first negative electrode terminal side surface A306A. The first positive electrode terminal side surface A304A is a side surface of the first positive electrode terminal 304 formed on the side opposite to the first positive electrode terminal side surface B304B.

  The second positive electrode terminal side surface A305A is a surface facing the first negative electrode terminal side surface B306B. The second positive electrode terminal side surface B305B is a surface facing the second negative electrode terminal side surface A307A. The first negative terminal side surface A306A is a surface facing the first positive terminal side surface B304B. The first negative terminal side surface B306B is a surface facing the second positive terminal side surface A305A. The second negative electrode terminal side surface A307A is a surface facing the second positive electrode terminal side surface B305B. The second negative terminal side surface B307B is the surface closest to the AC terminal 308.

  Thus, by making the structure which arrange | positioned the positive electrode terminal and the negative electrode terminal by turns, the electric current which flows into a positive electrode terminal and a negative electrode terminal flows into the opposite direction, the effect | action which cancels out mutual inductance works, and the wiring inductance of an inverter circuit can be reduced.

  FIG. 4 is an external perspective view of the circuit portion shown in FIG.

  One mold is pressed against one surface of the terminal main surface 318, and the other mold is pressed against the other surface of the terminal main surface 318. Then, a sealing resin material 320 is injected into the mold (transfer molding). If the main surface of the first positive electrode terminal 304 and the main surface of the first negative electrode terminal 306 are stacked, the mold is configured so that the sealing resin material 320 does not leak from the space between the main surfaces. It becomes complicated. Therefore, the side surfaces of the positive and negative electrode terminals are opposed to each other and the positive and negative electrode terminals are arranged in a row so that the main surfaces of the terminals are pressed against the mold, and the sealing resin material 320 is injected.

  4, the third conductor portion 302 and the fourth conductor portion are sealed with the sealing resin 320, but the surface opposite to the surface connected to the power semiconductor element and the diode is exposed. By the sealing resin 320, the first positive terminal 304, the second positive terminal 305, the first negative terminal 306, the second negative terminal 307, the AC terminal 308, the upper arm signal connection terminal 317U, and the lower arm signal connection terminal 317L are Partially sealed.

  FIG. 5 is a circuit diagram of an inverter device including the circuit portion shown in FIG.

  The inverter circuit 100 includes a first power semiconductor element 313 and a first diode 315 that operate as the upper arm 101, and a second power semiconductor element 314 and a second diode 316 that operate as the lower arm 102, and supplies an AC current to the motor generator. Is connected to the connector 113 for transmitting the signal. The upper arm 101 and the lower arm 102 are connected to the AC power line to the motor generator through the AC terminal 110 and the AC connector 113 from the middle point portion.

  The control unit 117 includes a driver circuit 119 that drives and controls the inverter circuit 100, and a control circuit 118 that supplies a control signal to the driver circuit 119 via the signal line 120.

  The power semiconductor element operates in response to the drive signal output from the control unit 117, and converts the DC power supplied from the battery into three-phase AC power. The converted electric power is supplied to the armature winding of the motor generator.

  The first power semiconductor element 313 includes a collector electrode 105, a signal emitter electrode 107, and a gate electrode 106. The second power semiconductor element 314 includes a collector electrode 105, a signal emitter electrode 107, and a gate electrode 106. The first diode 315 is electrically connected in parallel with the first power semiconductor element 313. The second diode 316 is electrically connected to the second power semiconductor element 314 in parallel. A MOSFET (metal oxide semiconductor field effect transistor) may be used as the switching power semiconductor element, but in this case, the first diode 315 and the second diode 316 are not required.

  The control circuit 118 includes a microcomputer (hereinafter referred to as “microcomputer”) for calculating the switching timing of the first power semiconductor element 313 and the second power semiconductor element 314. As input information to the microcomputer, a target torque value required for the motor generator, a current value supplied from the upper arm 101 and the lower arm 102 to the armature winding of the motor generator, and a magnetic pole position of the rotor of the motor generator Is entered. The target torque value is based on a command signal output from a host controller (not shown). The current value is detected based on the detection signal output from the current sensor 121 via the signal line 120. The magnetic pole position is detected based on a detection signal output from a rotating magnetic pole sensor (not shown) provided in the motor generator.

  In the present embodiment, the positive terminal 108 (see FIG. 4) and the negative terminal 109 (see FIG. 4) are branched into a first positive terminal 304 and a second positive terminal 305, and a first negative terminal 306 and a second negative terminal 307, respectively. By alternately configuring the positive and negative terminal sides, the currents flowing through the positive terminal 108 and the negative terminal 109 flow in opposite directions, acting to cancel each other out, and reducing the wiring inductance of the inverter main circuit. it can.

  If the state in which the side surface of the positive electrode terminal 108 and the side surface of the negative electrode terminal 109 are disposed to face each other is maintained, the positive electrode terminal 108 is disposed closer to the first conductor portion 300 than the fourth conductor portion 303. While the distance between the terminal 108 and the first conductor portion 300 is small, the distance between the negative electrode terminal 109 and the fourth conductor portion 303 is large. Further, when the positive electrode terminal 108 is disposed closer to the fourth conductor portion 303 than the first conductor portion 300, the distance between the positive electrode terminal 108 and the first conductor portion 300 is increased, and the negative electrode terminal 109 and the first conductor portion 300 are increased. The distance from the four conductor portions 303 is reduced.

  Therefore, in the present embodiment, the first negative electrode terminal 306 is configured such that the first negative electrode terminal side surface A306A faces the first positive electrode terminal side surface B304B of the first positive electrode terminal 304 and the first negative electrode terminal side surface B306B is the second positive electrode terminal 305. Is sandwiched between the first positive terminal 304 and the second positive terminal 305 so as to face the second positive terminal side surface A305A. The second positive terminal 305 is disposed closer to the second conductor portion 303 than the first positive terminal 304. The second negative electrode terminal 307 is disposed so that the second negative electrode terminal side surface A307A faces the second positive electrode terminal side surface B305B of the second positive electrode terminal 305, and the second negative electrode terminal 307 further includes the first positive electrode terminal 304 and the second positive electrode terminal 307. The positive electrode terminal 305 and the first negative electrode terminal 306 are disposed closer to the second conductor portion 303 than the positive electrode terminal 305 and the first negative electrode terminal 306.

Accordingly, the length of the first intermediate conductor 309 connecting the first negative electrode terminal 306 and the second negative electrode terminal 307 and the second intermediate conductor 310 connecting the second conductor portion 303 is shortened, and the wiring inductance of the inverter main circuit is reduced. Can be reduced.

  FIG. 6 is an external perspective view of the power semiconductor device according to the second embodiment.

  FIG. 6 is an exploded perspective view in which the second intermediate conductor part 310 of FIG. 1 is improved in order to reduce the inductance and resistance imbalance generated in the first negative terminal 306 and the second negative terminal 307.

  Similar to FIGS. 1 and 2, the first intermediate conductor portion 309 and the second intermediate conductor portion 310 are provided, and the first intermediate conductor portion 309 includes the first negative electrode terminal 306 and the second negative electrode terminal 305. The second negative terminal 307 is connected. The second intermediate conductor portion 310 connects the first intermediate conductor portion 309 and the fourth conductor portion 303.

  When viewed from a direction perpendicular to the terminal main surface 318 of the second positive electrode terminal 305, the second intermediate conductor portion 310 has a connection portion between the second intermediate conductor portion 310 and the first intermediate conductor portion 309 as the second positive electrode. The structure is arranged so as to overlap with the terminal 305.

  However, the length of the current path from the connection portion to the first negative electrode terminal 306 and the length of the current path from the second negative electrode terminal 307 differs depending on the position of the connection portion between the second intermediate conductor portion 310 and the first intermediate conductor portion 309. The magnitudes of resistance in both current paths are also different. Thereby, the heat generation of the negative electrode terminal becomes uneven.

  The second intermediate conductor portion 310 is connected to the first intermediate conductor portion 309 so as to be stacked on the second positive electrode terminal 305, and is a portion closest to the second negative electrode terminal 307 side of the fourth conductor portion 303. A connection portion with the second intermediate conductor 309 is connected.

  As a result, the current path from the area where the connection between the second intermediate conductor 310 and the first intermediate conductor 309 and the second positive terminal 305 overlaps the first negative terminal 306, the second intermediate conductor 310 and the second intermediate conductor 310 The length of the current path between the second negative terminal 307 and the area where the second positive terminal 305 overlaps with the connection with the first intermediate conductor 309 is equal, and the resistance between the two current paths is equal.

  As a result, the magnetic field generated at the first negative electrode terminal 306 is increased, the effect of canceling out the magnetic field generated at the positive electrode terminal is increased, and the length of the second intermediate conductor portion 310 can be shortened compared to the conventional structure example, thereby reducing inductance. Can do. In addition, the resistance of both current paths is balanced and the heat generated in the first negative terminal 306 and the second negative terminal 307 is also balanced, so that the heat generated in the negative terminal can be made uniform and the heat generated in the entire terminal can be suppressed.

  FIG. 7 is an exploded perspective view of a circuit portion constituting a series circuit of upper and lower arms of a power semiconductor device in which a high-voltage system terminal and a control terminal are separated, and FIG. 8 is a circuit component assembled as shown in FIG. FIG.

  The positive terminal corresponds to the first positive terminal 304 and the second positive terminal 305, and the negative terminal corresponds to the first negative terminal 306 and the second negative terminal 307.

  The bonding material 311 connects the second conductor portion 301 and the third conductor portion 302. The positive electrode terminal and the negative electrode terminal have a structure arranged in the opposite direction to the upper arm signal connection terminal 317U and the lower arm signal connection terminal 317L, which are weak electrical terminals. Thereby, the positive electrode terminal and the negative electrode terminal can be arranged close to either the first conductor part 300 or the fourth conductor part 303, and when the positive electrode terminal and the negative electrode terminal are arranged at a position close to the second conductor part 303, The first positive terminal 304 is disposed at a position closest to the first conductor part 300. In addition, with the above structure, the first power semiconductor element 313 and the second power semiconductor element 314 are arranged at positions close to the signal connection terminals. The first diode 315 and the second diode 316 are disposed at positions close to the positive terminal and the negative terminal.

DESCRIPTION OF SYMBOLS 100 ... Inverter circuit, 101 ... Upper arm, 102 ... Lower arm, 105 ... Collector electrode, 106 ... Gate electrode, 107 ... Signal emitter electrode, 108 ... Positive electrode terminal, 109 ... Negative electrode terminal, 110 ... AC terminal, 111 ... DC Positive terminal 112, DC negative terminal, 113 AC connector, 117 control unit, 118 control circuit, 119 driver circuit, 120 signal line, 121 current sensor, 300 first conductor, 301 second Conductor part 302 ... third conductor part 302A ... recessed structure 303 ... fourth conductor part 304 ... first positive electrode terminal 304A ... first positive electrode terminal side face A 304B first first positive terminal side face B 305 ... first Two positive terminals, 305A ... second positive terminal side A, 305B ... second positive terminal side B, 306 ... first negative terminal, 306A ... first negative terminal side A, 306B 1st negative electrode terminal side surface B, 307 ... 2nd negative electrode terminal, 307A ... 2nd negative electrode terminal side surface A, 307B ... 2nd negative electrode terminal side surface B, 308 ... AC terminal, 309 ... 1st intermediate conductor part, 310 ... 2nd intermediate | middle Conductor part, 311 ... bonding agent, 313 ... first power semiconductor element, 314 ... second power semiconductor element, 315 ... first diode, 316 ... second diode, 317U ... signal connection terminal for upper arm, 317L ... for lower arm Signal connection terminal, 318 ... terminal main surface, 320 ... resin sealing material

Claims (4)

A first power semiconductor element constituting the upper arm of the inverter circuit;
A second power semiconductor element constituting a lower arm of the inverter circuit;
A first conductor portion connected to a collector electrode of the first power semiconductor element;
A fourth conductor portion connected to the emitter electrode of the second power semiconductor element;
A first positive terminal and a second positive terminal connected to the first conductor,
A first negative terminal and a second negative terminal connected to the fourth conductor,
Each of the first positive terminal, the second positive terminal, the first negative terminal, and the second negative terminal has a main surface and a side surface that is smaller in area than the main surface,
The first negative electrode terminal and the second negative electrode terminal are arranged such that one side surface faces the side surface of the first positive electrode terminal and the other side surface faces one side surface of the second positive electrode terminal. Sandwiched between positive terminals,
The second positive terminal is disposed closer to the fourth conductor part than the first positive terminal,
The second negative electrode terminal is disposed such that one side surface faces the other side surface of the second positive electrode terminal,
Furthermore, the second negative electrode terminal is disposed closer to the fourth conductor portion than the first positive electrode terminal, the second positive electrode terminal, and the first negative electrode terminal. The power semiconductor device according to claim 1,
A first intermediate conductor portion;
A second intermediate conductor portion,
The first intermediate conductor portion connects the first negative terminal and the second negative terminal so as to straddle the second positive terminal,
The second intermediate conductor portion connects the first intermediate conductor portion and the fourth conductor portion,
When viewed from a direction perpendicular to the main surface of the second positive electrode terminal, the second intermediate conductor portion has a connection portion between the second intermediate conductor portion and the first intermediate conductor portion and the second positive electrode terminal. Power semiconductor devices arranged so as to overlap. A first power semiconductor element constituting the upper arm of the inverter circuit;
A second power semiconductor element constituting a lower arm of the inverter circuit;
A first conductor portion connected to a collector electrode of the first power semiconductor element;
A fourth conductor portion connected to the emitter electrode of the second power semiconductor element;
A first positive terminal and a second positive terminal connected to the first conductor,
A first negative terminal and a second negative terminal connected to the fourth conductor,
The first positive electrode terminal, the second positive electrode terminal, the first negative electrode terminal, and the second negative electrode terminal each have a main surface and a side surface having a smaller area than the main surface,
The first negative electrode terminal and the second negative electrode terminal are arranged such that one side surface faces the side surface of the first positive electrode terminal and the other side surface faces one side surface of the second positive electrode terminal. Sandwiched between positive terminals,
The second positive terminal is disposed closer to the fourth conductor part than the first positive terminal,
The second negative electrode terminal is disposed such that one side surface faces the other side surface of the second positive electrode terminal,
Furthermore, the first positive electrode terminal is a power semiconductor device arranged closer to the first conductor portion than the second positive electrode terminal, the first negative electrode terminal, and the second negative electrode terminal. In the power semiconductor device according to 請 Motomeko 3,
An upper arm signal connection terminal;
A lower arm signal connection terminal,
The power connection terminal for the upper arm and the signal connection terminal for the lower arm are arranged in a direction opposite to the first positive terminal, the second positive terminal, the first negative terminal, and the second negative terminal. apparatus.

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