JP2016086491A - Semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To achieve sufficient homogenization of the energizing current of parallel implementation elements, by taking account of the energizing path in the upper arm and lower arm, and the wiring floating inductance thereof.SOLUTION: A semiconductor device includes a first switching element constituting an upper arm circuit, a first diode constituting the upper arm circuit and electrically connected in parallel with the first switching element, a first conductor connected to the high potential side of the first switching element and first diode, a second conductor connected to the low potential side of the first switching element and first diode, and a relay conductor for connecting the upper arm circuit and second conductor. When the semiconductor device is projected from the direction perpendicular the electrode plane of the first switching element, the first switching element and first diode are arranged so that the projection part of the first switching element and the projection part of the first diode overlap the outer circumference of a circle around the relay conductor.SELECTED DRAWING: Figure 3

Description

  The present invention relates to a semiconductor device, and more particularly to a mounting structure of a semiconductor device applied to a power conversion device used in a vehicle.

  A semiconductor module mounted on a power converter, so-called inverter, has a power semiconductor switching element and a diode mounted therein. In applications where high voltage and large current are switched, it is common practice to mount a plurality of power semiconductor switching elements and diodes in parallel and disperse the heat generated by each element. In this configuration, it is desirable from the viewpoint of improving the cooling efficiency that the energization currents of the respective elements mounted in parallel are equalized and the calorific values of the respective elements are made equal.

  For example, Patent Document 1 describes a configuration in which a balance control element is installed in order to suppress current imbalance between a switching element and a diode.

JP 2000-311983 A

  However, conventionally, the energization path lengths of the upper arm and lower arm constituting the power converter differ depending on the case of passing through each of the elements mounted in parallel, and accordingly the wiring stray inductance is also different. In view of the time change rate di / dt of the current generated at the time, the equalization of the conduction current of the elements mounted in parallel has not been sufficiently considered.

  An object of the present invention is to realize a sufficiently uniform energization current of elements mounted in parallel in consideration of an energization path flowing through an upper arm and a lower arm and its wiring stray inductance.

  A semiconductor device according to the present invention includes one or a plurality of first switching elements constituting an upper arm circuit of an inverter circuit, and constitutes the upper arm circuit of the inverter circuit and is electrically connected to the first switching element. One or a plurality of first diodes connected in parallel; the first switching element; a first conductor connected to the high potential side of the first diode; the first switching element; and the first diode. A second conductor portion connected to the low potential side of the semiconductor device, and a relay conductor portion connecting the upper arm circuit and the second conductor portion, and projected from a direction perpendicular to the electrode surface of the first switching element In this case, the first switching element and the first diode include a projection part of the first switching element and a projection part of the first diode centered on the relay conductor part. Are arranged so as to overlap with the outer periphery of the circle was.

  By considering the current-carrying path flowing through the upper arm and the lower arm and the wiring stray inductance according to the present invention, it is possible to suppress the imbalance of the wiring stray inductance of the current-carrying path of the elements mounted in parallel. It is possible to realize sufficient uniformization of the energization current.

It is a figure which shows the control block of a hybrid electric vehicle. It is explanatory drawing of the electric circuit structure of the inverter apparatus 140 and the inverter apparatus 142. FIG. 2 is a layout diagram of a first MOSFET 101, a second MOSFET 102, a first diode 156, and a second diode 157 according to the present embodiment. FIG. FIG. 11 is a layout diagram of a first IGBT 101C, a second IGBT 102C, a first diode 156, and a second diode 157 according to another embodiment. FIG. 6 is a layout diagram of a first MOSFET 101 and a first diode 156 according to another embodiment. FIG. 10 is a layout diagram of a second MOSFET 102 and a second diode 157 according to another embodiment.

  Hereinafter, embodiments will be described with reference to the drawings.

  The power conversion device according to the embodiment of the present invention can be applied to a hybrid vehicle or a pure electric vehicle. As a representative example, the power conversion device according to the embodiment of the present invention is applied to a hybrid vehicle. The control configuration and the circuit configuration of the power converter will be described with reference to FIGS. 1 and 2. FIG. 1 is a diagram showing a control block of a hybrid vehicle.

  The power conversion device according to the embodiment of the present invention is used in a vehicle-mounted power conversion device for a vehicle-mounted electrical system mounted on an automobile, in particular, a vehicle drive electrical system, and has a very severe mounting environment and operational environment. The inverter device will be described as an example. A vehicle drive inverter device is provided in a vehicle drive electrical system as a control device for controlling the drive of a vehicle drive motor, and a DC power supplied from an onboard battery or an onboard power generator constituting an onboard power source is a predetermined AC power. Then, the AC power obtained is supplied to the vehicle drive motor to control the drive of the vehicle drive motor. Further, since the vehicle drive motor also has a function as a generator, the vehicle drive inverter device also has a function of converting the AC power generated by the vehicle drive motor into DC power according to the operation mode. Yes. The converted DC power is supplied to the on-vehicle battery.

  The configuration of the present embodiment is optimal as a power conversion device for driving a vehicle such as an automobile or a truck. However, other power conversion devices such as a power conversion device such as a train, a ship, and an aircraft, and a factory facility are also included. Applicable to industrial power converters used as drive motor control devices, or household power conversion devices used in home solar power generation systems and motor control devices that drive household appliances It is.

  In FIG. 1, a hybrid electric vehicle (hereinafter referred to as “HEV”) 110 is one electric vehicle and includes two vehicle drive systems. One of them is an engine system that uses an engine 120 that is an internal combustion engine as a power source. The engine system is mainly used as a drive source for HEV. The other is an in-vehicle electric system using motor generators 192 and 194 as a power source. The in-vehicle electric system is mainly used as an HEV drive source and an HEV power generation source. The motor generators 192 and 194 are, for example, synchronous machines or induction machines, and operate as both a motor and a generator depending on the operation method.

  A front wheel axle 114 is rotatably supported at the front portion of the vehicle body. A pair of front wheels 112 are provided at both ends of the front wheel axle 114. A rear wheel axle (not shown) is rotatably supported on the rear portion of the vehicle body. A pair of rear wheels are provided at both ends of the rear wheel axle. The HEV of this embodiment employs a so-called front wheel drive system in which the main wheel driven by power is the front wheel 112 and the driven wheel to be driven is the rear wheel. You may adopt.

  A front wheel side differential gear (hereinafter referred to as “front wheel side DEF”) 116 is provided at the center of the front wheel axle 114. The front wheel axle 114 is mechanically connected to the output side of the front wheel side DEF 116. The output shaft of the transmission 118 is mechanically connected to the input side of the front wheel side DEF 116. The front wheel side DEF 116 is a differential power distribution mechanism that distributes the rotational driving force that is shifted and transmitted by the transmission 118 to the left and right front wheel axles 114. The output side of the motor generator 192 is mechanically connected to the input side of the transmission 118. The output side of the engine 120 and the output side of the motor generator 194 are mechanically connected to the input side of the motor generator 192 via the power distribution mechanism 122. Motor generators 192 and 194 and power distribution mechanism 122 are housed inside the casing of transmission 118.

  The motor generators 192 and 194 are synchronous machines having a permanent magnet on the rotor, and the AC power supplied to the armature windings of the stator is controlled by the inverter devices 140 and 142, thereby the motor generators 192 and 194. Is controlled. A battery 136 is electrically connected to the inverter devices 140 and 142, and power can be exchanged between the battery 136 and the inverter devices 140 and 142.

  In the present embodiment, the first motor generator unit composed of the motor generator 192 and the inverter device 140 and the second motor generator unit composed of the motor generator 194 and the inverter device 142 are provided. ing. That is, in the case where the vehicle is driven by the power from the engine 120, when assisting the driving torque of the vehicle, the second motor generator unit is operated as the power generation unit by the power of the engine 120 to generate power. The first electric power generation unit is operated as an electric unit by the obtained electric power. Further, in the same case, when assisting the vehicle speed of the vehicle, the first motor generator unit is operated by the power of the engine 120 as a power generation unit to generate power, and the second motor generator unit is generated by the electric power obtained by the power generation. Operate as an electric unit.

  In the present embodiment, the vehicle can be driven only by the power of the motor generator 192 by operating the first motor generator unit as an electric unit by the electric power of the battery 136. Furthermore, in the present embodiment, the battery 136 can be charged by generating power by operating the first motor generator unit or the second motor generator unit as the power generation unit by the power of the engine 120 or the power from the wheels.

  The inverter devices 140 and 142, the inverter device 43, and the capacitor module 500 are in an electrical close relationship. Furthermore, there is a common point that measures against heat generation are necessary. It is also desired to make the volume of the device as small as possible. The power conversion device 1 includes inverter devices 140 and 142 and a capacitor module 500 in the casing of the power conversion device 1. With this configuration, a small and highly reliable device can be realized.

  Further, by incorporating the inverter devices 140 and 142 and the capacitor module 500 in one housing, it is effective for simplification of wiring and noise countermeasures. In addition, the inductance of the connection circuit between the capacitor module 500, the inverter devices 140 and 142, and the inverter device 43 can be reduced, the spike voltage can be reduced, heat generation can be reduced, and heat dissipation efficiency can be improved.

  Next, the electric circuit configuration of the inverter device 140 will be described with reference to FIG. Since the inverter devices 140 and 142 have the same configuration and perform the same functions and have the same functions, the inverter device 140 will be described here as a representative example.

  The power conversion device 1 according to the present embodiment includes an inverter device 140 and a capacitor module 500, and includes the inverter device 140 and a control unit 170. The inverter device 140 includes a plurality of semiconductor devices 150 including a first MOSFET 101 (metal oxide semiconductor field effect transistor) and a first diode 156 that operate as an upper arm, and a second MOSFET 102 and a second diode 157 that operate as a lower arm. It has a configuration in which it is connected to an AC power line (AC bus bar) to the motor generator 192 from an intermediate point portion of each upper and lower arm series circuit through an AC terminal. In addition, the control unit 170 includes a driver circuit 174 that drives and controls the inverter circuit, and a control circuit 172 that supplies a control signal to the driver circuit 174 via the signal line 176.

  The first MOSFET 101 and the second MOSFET 102 are switching power semiconductor elements, operate in response to a drive signal output from the control unit 170, and convert DC power supplied from the battery 136 into three-phase AC power. The converted electric power is supplied to the armature winding of the motor generator 192.

  The inverter device 140 is configured by a three-phase bridge circuit, and the upper and lower arm series circuits for three phases are respectively connected between the positive DC terminal and the negative DC terminal that are electrically connected to the positive electrode side and the negative electrode side of the battery 136. Are electrically connected in parallel.

  In the present embodiment, the use of a MOSFET as the switching power semiconductor element is exemplified. A first diode 156 is electrically connected between the drain electrode and the source electrode of the first MOSFET 101 as shown. A second diode 157 is electrically connected between the drain electrode and the source electrode of the second MOSFET 102 as shown. The first diode 156 and the second diode 157 have two electrodes, a cathode electrode and an anode electrode, and the first diode 156 has a forward direction from the source electrode to the drain electrode of the first MOSFET 101 so as to be a forward direction. The cathode electrode is electrically connected to the drain electrode of the first MOSFET 101, and the anode electrode is electrically connected to the source electrode of the first MOSFET 101.

  The second diode 157 has a cathode electrode electrically connected to the drain electrode of the second MOSFET 102 and an anode electrode electrically connected to the source electrode of the second MOSFET 102 so that the direction from the source electrode to the drain electrode of the second MOSFET 102 is the forward direction. ing. An IGBT (insulated gate bipolar transistor) may be used as the power semiconductor element for switching.

  The semiconductor device 150 constituting the upper and lower arm series circuit is provided for three phases corresponding to each phase winding of the armature winding of the motor generator 192. Each of the three semiconductor devices 150 forms a U phase, a V phase, and a W phase to the motor generator 192 via an intermediate electrode and an AC terminal that connect the source electrode of the first MOSFET 101 and the drain electrode of the second MOSFET 102. The upper and lower arm series circuits are electrically connected in parallel.

  The drain electrode of the first MOSFET 101 of the upper arm is connected to the positive capacitor electrode of the capacitor module 500 via the positive terminal (P terminal), and the source electrode of the second MOSFET 102 of the lower arm is connected to the capacitor module 500 via the negative terminal (N terminal). Each is electrically connected to the negative electrode capacitor electrode (connected by a DC bus bar). The intermediate electrode corresponding to the midpoint portion of each arm (the connection portion between the source electrode of the first MOSFET 101 and the drain electrode of the second MOSFET 102) is electrically connected to the corresponding phase winding of the armature winding of the motor generator 192 via the AC connector 188. Connected.

  The capacitor module 500 is for configuring a smoothing circuit that suppresses fluctuations in DC voltage caused by the switching operation of the first MOSFET 101 and the second MOSFET 102. A positive electrode side of the battery 136 is electrically connected to the positive electrode side capacitor electrode of the capacitor module 500 and a negative electrode side of the battery 136 is electrically connected to the negative electrode side capacitor electrode of the capacitor module 500 via a DC connector. As a result, the capacitor module 500 is connected between the drain electrode of the upper arm first MOSFET 101 and the positive electrode side of the battery 136, and between the source electrode of the lower arm second MOSFET 102 and the negative electrode side of the battery 136. Electrically connected in parallel to the arm series circuit.

  The control unit 170 is for operating the MOSFET, and generates a timing signal for controlling the switching timing of the first MOSFET 101 and the second MOSFET 102 based on input information from other control devices or sensors. And a driver circuit 174 that generates a drive signal for switching the first MOSFET 101 and the second MOSFET 102 based on the timing signal output from the control circuit 172.

  The control circuit 172 includes a microcomputer (hereinafter referred to as “microcomputer”) for calculating the switching timing of the first MOSFET 101 and the second MOSFET 102. As input information, the microcomputer includes a target torque value required for the motor generator 192, a current value supplied from the semiconductor device 150 to the armature winding of the motor generator 192, and a magnetic pole position of the rotor of the motor generator 192. Have been entered. The target torque value is based on a command signal output from a host controller (not shown). The current value is detected based on a detection signal output from a current sensor (not shown). The magnetic pole position is detected based on a detection signal output from a rotating magnetic pole sensor (not shown) provided in the motor generator 192. In the present embodiment, the case where the current values of three phases are detected will be described as an example, but the current values for two phases may be detected.

  The microcomputer in the control circuit 172 calculates the d and q axis current command values of the motor generator 192 based on the target torque value, and the calculated d and q axis current command values and the detected d and q The voltage command values for the d and q axes are calculated based on the difference from the current value of the shaft, and the calculated voltage command values for the d and q axes are calculated based on the detected magnetic pole position. Convert to W phase voltage command value. Then, the microcomputer generates a pulse-like modulated wave based on the comparison between the fundamental wave (sine wave) and the carrier wave (triangular wave) based on the voltage command values of the U-phase, V-phase, and W-phase, and the generated modulation The wave is output to the driver circuit 174 as a PWM (pulse width modulation) signal.

  When driving the lower arm, the driver circuit 174 amplifies the PWM signal, and when driving the upper arm to the gate electrode of the corresponding second MOSFET 102 of the lower arm as a drive signal, the driver circuit 174 drives the reference potential level of the PWM signal. Is shifted to the level of the reference potential of the upper arm and then the PWM signal is amplified and output as a drive signal to the gate electrode of the corresponding first MOSFET 101 of the upper arm. As a result, each of the first MOSFET 101 and the second MOSFET 102 performs a switching operation based on the input drive signal.

  FIG. 3 is a top view showing a layout of MOSFETs and diodes for one phase of the semiconductor device 150 according to the present embodiment. Although the semiconductor device 150 is described in this figure, the inverter device 142 has the same configuration. In the figure, only the first MOSFET 101, the second MOSFET 102, the first diode 156, and the second diode 157 to be driven are illustrated. The structure of a MOSFET device such as a thermistor for detecting the load and temperature connected to the MOSFET and a resin or gel for sealing the bus bar is omitted.

  The drain electrodes of the first MOSFETs 101A and 101B and the cathode electrodes of the first diodes 156A and 156B are soldered to the first conductor portion 201. In addition, the drain electrodes of the second MOSFETs 102A and 102B and the cathode electrodes of the second diodes 157A and 157B are soldered to the second conductor portion 202 and disposed on the side portion of the first conductor portion 201.

  The first conductor portion 201 and the second conductor portion 202 have a wiring pattern laid out on the upper surface of the insulating substrate 213, and the lower surface of the insulating substrate 213 has a solid pattern (not shown) wired on the entire surface of the substrate. The stray inductance reduction effect by current generation can be obtained.

  In this embodiment, the case where the first conductor portion 201 and the second conductor portion 202 are laid out on the upper surface of the insulating substrate 213 is described. However, the insulation performance and the floating inductance reduction effect due to the generation of eddy current can be obtained. If it is a structure, you may use another member.

  The gate electrodes of the first MOSFETs 101A and 101B and the second MOSFETs 102A and 102B and the Kelvin source electrode serving as the gate reference potential are connected to the upper arm signal terminal 210 and the lower arm signal terminal 211 by wire bonding 283.

  The source electrodes of the first MOSFETs 101A and 101B and the anode electrodes of the first diodes 156A and 156B are soldered to the third conductor portion 203, and the source electrodes of the second MOSFETs 102A and 102B and the anode electrodes of the second diodes 157A and 157B are the fourth conductor 204. Soldered to.

  The first MOSFETs 101A and 101B constitute the upper arm circuit of the inverter circuit. The first diodes 156A and 156B constitute an upper arm circuit of the inverter circuit and are electrically connected in parallel with the first MOSFETs 101A and 101B. The second MOSFETs 102A and 102B constitute a lower arm circuit of the inverter circuit. The second diodes 157A and 157B constitute a lower arm circuit of the inverter circuit and are electrically connected in parallel with the second MOSFETs 102A and 102B.

  The relay conductor portion 280 electrically connects the third conductor portion 203 and the second conductor portion 202. The relay conductor part 280 may be formed integrally with the third conductor part 203 and the second conductor part 202.

  In FIG. 4, the first MOSFET 101, the first diode 156, the second MOSFET 102, and the second diode 157 are all illustrated in the case of two parallels (A and B in FIG. 4). For example, it may be 3 parallel or 4 parallel.

  The first MOSFETs 101A and 101B, the first diodes 156A and 156B, the second MOSFETs 102A and 102B, and the second diodes 157A and 157B are all arranged radially around the relay conductor 280.

  That is, when projected from the direction perpendicular to the electrode surface of the first MOSFET 101A, the first MOSFETs 101A and 101B and the first diodes 156A and 156B are the projection parts of the first MOSFETs 101A and 101B and the projection parts of the first diodes 156A and 156B are relay conductor parts. It arrange | positions so that the outer periphery of the circle | round | yen centering on 280 may overlap.

  Similarly, when projected from the direction perpendicular to the electrode surface of the first MOSFET 101A, the second MOSFETs 102A and 102B and the second diodes 157A and 157B have the projection parts of the second MOSFETs 102A and 102B and the projection parts of the second diodes 157A and 157B are relay conductors. It arrange | positions so that it may overlap with the outer periphery of the circle | round | yen centering on the part 280. FIG.

  Note that the thickness W1 of the outer periphery of the circle can be defined as the width W2 of the relay conductor portion 280.

  With this configuration, the distance from the semiconductor element to the relay conductor portion 280 can be made equal or equal to the standard. In other words, the wiring stray inductance from the semiconductor element to the relay conductor 280 can be made uniform.

  When switching the first MOSFETs 101A and 101B constituting the upper arm circuit in a state where the return current flows through the second diodes 157A and 157B of the lower arm, the path where di / dt, which is the time change rate of the current, is generated, This is a path that connects the first MOSFETs 101A and 101B to the second diodes 157A and 157B via the relay conductor 280.

  At this time, since the distance between the first MOSFET 101A and the first MOSFET 101B in parallel from the relay conductor portion 280 is equal, the wiring stray inductance is also equalized, and the effect of suppressing the current imbalance between the first MOSFET 101A and the first MOSFET 101B can be obtained. it can.

  At the same time, since the distance between the second parallel diode 157A and the second diode 157B from the relay conductor portion 280 is also equal, the wiring stray inductance is also equal, and the current imbalance between the second diode 157A and the second diode 157B is also suppressed. Effects can be obtained.

  Further, since the MOSFET has a body diode inside the element, the return current also flows through the second MOSFETs 102A and 102B in the lower arm.

  When switching the first MOSFETs 101A and 101B constituting the upper arm circuit in a state where the return current flows through the second MOSFETs 102A and 102B of the lower arm, the path through which di / dt that is the time change rate of the current is generated is the first MOSFET 101A. And 101B via the relay conductor portion 280 and a path connected to the second MOSFETs 102A and 102B.

  Since the distance between the two parallel second MOSFETs 102A and the second MOSFET 102B from the relay conductor part 280 is also equal, the wiring stray inductance is also equalized, and the effect of suppressing the current imbalance between the second MOSFET 102A and the second MOSFET 102B can be obtained.

  When switching the second MOSFETs 102A and 102B constituting the lower arm in the state where the reflux current flows through the first diodes 156A and 156B or the first MOSFETs 101A and 101B of the upper arm, the first MOSFETs 101A and 101B of the upper arm are also switched. Is that the energization state of each element is only reversed between the upper arm and the lower arm, and the effect of suppressing the current imbalance of each element connected in parallel is the same as when switching the upper arm. Can be obtained.

  In order to arrange each element so as to draw an arc around the relay conductor part 280, the two parallel elements are arranged on the conductor with a step such as a staircase. This arrangement can reduce the interference of heat flux with adjacent elements, compared to the case where one side of the element is arranged next to each other when cooling the heat generated when a current is passed through the conductor. Also, the effect of improving the cooling efficiency can be obtained.

  Although it is desirable to arrange each element so as to draw an arc around the relay conductor portion 280, if the effect of suppressing the current imbalance of two parallel elements is obtained, the relay conductor portion 280 is the center. Alternatively, two parallel elements may be arranged radially or stepwise.

  FIG. 4 is a diagram for explaining the configuration of a semiconductor device 151 according to another embodiment. The difference from the configuration of the semiconductor device 150 shown in FIG. 3 is that the first IGBT 101C and the second IGBT 102C are used instead of the first MOSFETs 101A and 101B and the second MOSFETs 102A and 102B, and the other configurations are the same as those in FIG. It is.

  Although FIG. 4 shows a case where only one first IGBT 101C and second IGBT 102C are arranged, a plurality of IGBTs may be arranged in parallel.

  Also in this configuration, when the first IGBT 101C is switched, the distance from the relay conductor portion 280 to the two parallel second diodes 157A and 157B is uniform, so that the wiring stray inductance is also uniform and the second diode 157A. In addition, it is possible to obtain an effect of suppressing current imbalance of the second diode 157B.

  Even when the second IGBT 102C is switched, since the distance from the relay conductor 280 to the first diode 156A and the first diode 156B is equal, the wiring stray inductance is also equal, and the first diode 156A and the first diode 156B An effect of suppressing current imbalance can be obtained.

  FIG. 5A and FIG. 5B are diagrams in the case where the configuration of the semiconductor device according to another embodiment is set to 1 in 1. FIG. 5A shows the configuration of the upper arm, and FIG. 5B shows the configuration of the lower arm. 1 in 1 indicates a configuration in which either an upper arm or a lower arm is built in one semiconductor module.

  In the configuration of the upper arm shown in FIG. 5A, the lower arm outputs the current of the third conductor portion 203 connected to the source electrodes of the first MOSFETs 101A and 101B and the anode electrodes of the first diodes 156A and 156B. The first MOSFETs 101A and 101B and the first diodes 156A and 156B are radially arranged in parallel for each element, with the relay conductor portion 280 connected to the center. Even in this configuration, since the distance from the relay conductor portion 280 to each element connected in parallel is equal, the wiring stray inductance is also equal, and current imbalance flowing through each element arranged in parallel is reduced. Effect is obtained.

  Also in the configuration of the lower arm shown in FIG. 5B, the upper arm to which the current of the second conductor portion 202 connected to the drain electrodes of the second MOSFETs 102A and 102B and the cathode electrodes of the second diodes 157A and 157B is input. The second MOSFETs 102A and 102B and the second diodes 157A and 157B are radially arranged in parallel with respect to each of the relay conductors 280 connected to the center. Even in this configuration, since the distance from the relay conductor portion 280 to each element connected in parallel is equal, the wiring stray inductance is also equal, and current imbalance flowing through each element arranged in parallel is reduced. Effect is obtained.

In all the embodiments described above, a plurality of the first diodes and the second diodes are provided, but one may be provided.

DESCRIPTION OF SYMBOLS 1 ... Power converter device 43 ... Inverter device 140 ... Inverter device 142 ... Inverter device 101 ... 1st MOSFET, 101A ... 1st MOSFET, 101B ... 1st MOSFET, 101C ... 1st IGBT, 102 ... 2nd MOSFET, 102A ... 2nd MOSFET , 102B ... 2nd MOSFET, 102C ... 2nd IGBT, 110 ... hybrid electric vehicle, 112 ... front wheel, 114 ... front wheel axle, 116 ... front wheel side differential gear, 118 ... transmission, 120 ... engine, 122 ... power distribution mechanism, 136 ... Battery: 150 ... Semiconductor device, 151 ... Semiconductor device, 156 ... First diode, 156A ... First diode, 156B ... First diode, 157 ... Second diode, 157A ... Second diode, 157B ... Second diode, DESCRIPTION OF SYMBOLS 70 ... Control part, 172 ... Control circuit, 174 ... Driver circuit, 176 ... Signal line, 188 ... AC connector, 192 ... Motor generator, 194 ... Motor generator, 201 ... First conductor part, 202 ... Second conductor part, 203 3rd conductor part, 204 ... 4th conductor part, 210 ... upper arm signal terminal, 211 ... lower arm signal terminal, 213 ... insulating substrate, 280 ... relay conductor part, 283 ... wire bonding, 500 ... capacitor module, W1 ... the thickness of the outer circumference of the circle, W2 ... the width of the relay conductor 280

Claims (4)

One or more first switching elements constituting the upper arm circuit of the inverter circuit;
One or more first diodes constituting the upper arm circuit of the inverter circuit and electrically connected in parallel with the first switching element;
A first conductor connected to the first switching element and a high potential side of the first diode;
A second conductor portion connected to a low potential side of the first switching element and the first diode;
A relay conductor portion connecting the upper arm circuit and the second conductor portion,
When projecting from a direction perpendicular to the electrode surface of the first switching element, the first switching element and the first diode include a projection part of the first switching element and a projection part of the first diode that connects the relay conductor part. A semiconductor device arranged so as to overlap with the outer periphery of a circle with a center. One or a plurality of switching elements constituting the lower arm circuit of the inverter circuit;
One or a plurality of diodes constituting the lower arm circuit of the inverter circuit and electrically connected in parallel with the switching element;
A first conductor connected to the switching element and a high potential side of the diode;
A second conductor portion connected to the switching element and a low potential side of the diode;
A relay conductor portion connecting the lower arm circuit and the first conductor portion,
When projected from the direction perpendicular to the electrode surface of the switching element, the switching element and the diode are arranged such that the projection part of the switching element and the projection part of the diode overlap with the outer periphery of a circle centering on the relay conductor part. Semiconductor device to be arranged. The semiconductor device according to claim 1,
One or a plurality of second switching elements constituting a lower arm circuit of the inverter circuit;
One or a plurality of second diodes constituting the lower arm circuit of the inverter circuit and electrically connected in parallel with the second switching element;
A third conductor portion connected to the high potential side of the second switching element and the second diode;
A fourth conductor portion connected to the low potential side of the second switching element and the second diode,
The relay conductor portion connects the second conductor portion and the third conductor portion,
The semiconductor device in which the second switching element and the second diode are arranged such that a projection part of the second switching element and a projection part of the second diode overlap with an outer periphery of a circle centering on the relay conductor part. The semiconductor device according to claim 1, wherein:
The thickness of the outer periphery of the circle is a semiconductor device that is the width of the intermediate terminal.