JP6272064B2 - Power converter - Google Patents

Description

  More particularly, the present invention relates to a power semiconductor module mounting structure applied to a power conversion device used in a vehicle.

  A power semiconductor module mounted on a power conversion device, so-called inverter, has a power semiconductor switching element and a diode mounted therein, and the power semiconductor switching element is required to improve the power conversion efficiency of the inverter and to simplify the cooling structure. Switching loss reduction is required by speeding up charging / discharging between the gate terminal and the emitter terminal (or source terminal) for controlling the insulated gate bipolar transistor (IGBT) and the metal oxide semiconductor field effect transistor (MOSFET). The

  In order to increase the charge / discharge speed between the gate terminal and the emitter terminal, it is effective to reduce the stray inductance between the gate terminal and the emitter terminal. For example, Patent Document 1 describes a configuration in which stray inductance is reduced by bending a gate terminal and an emitter terminal close to each other.

JP2010-245096

  Conventionally, however, attention has been paid to reducing the stray inductance between the gate terminal and the emitter terminal. However, in a configuration in which a plurality of power semiconductor switching elements are mounted, such as the upper arm / lower arm constituting the power converter. The balance of the influence of the floating inductance in each arm has not been sufficiently considered.

  The object of the present invention is to provide a structure in which a plurality of power semiconductor switching elements are mounted, such as an upper arm / lower arm that constitutes a power conversion device, with respect to the influence of stray inductance between the gate terminal and the emitter terminal. It is to suppress the balance.

  A power semiconductor module according to the present invention is a power semiconductor module having an upper arm circuit portion and a lower arm circuit portion of an inverter circuit for converting DC power into AC power, wherein the upper arm circuit portion is an upper arm power semiconductor element. A positive terminal to which the DC power is supplied, an AC terminal to which the AC power is supplied, an upper arm gate terminal connected to a gate of the upper arm power semiconductor element, and an emitter of the upper arm power semiconductor element An upper arm emitter terminal connected to the lower arm circuit unit, the lower arm circuit unit, a lower arm power semiconductor element, a negative electrode terminal supplied with the DC power, an AC terminal supplied with the AC power, A lower arm gate terminal connected to the gate of the lower arm power semiconductor element and an emitter connected to the emitter of the lower arm power semiconductor element. A lower arm emitter terminal, and the positive terminal, the upper arm gate terminal, and the upper arm emitter terminal protrude in the same direction, and the negative terminal, the lower arm gate terminal, and the lower arm emitter terminal Projecting in the same direction, the upper arm emitter terminal is disposed closer to the positive terminal than the upper arm gate terminal, and the lower arm gate terminal is closer to the negative terminal than the lower arm emitter terminal Be placed.

  Another power semiconductor module according to the present invention is a power semiconductor module having an upper arm circuit portion and a lower arm circuit portion of an inverter circuit for converting DC power into AC power, wherein the upper arm circuit portion includes: An arm power semiconductor element; a positive terminal to which the DC power is supplied; an AC terminal to which the AC power is supplied; an upper arm gate terminal connected to a gate of the upper arm power semiconductor element; and the upper arm power. An upper arm emitter terminal connected to an emitter of the semiconductor element, and the lower arm circuit unit is supplied with the lower arm power semiconductor element, a negative terminal supplied with the DC power, and the AC power. An AC terminal; a lower arm gate terminal connected to the gate of the lower arm power semiconductor element; and an emitter of the lower arm power semiconductor element. A positive arm, an upper arm gate terminal, and an upper arm emitter terminal projecting in the same direction, the negative terminal, the lower arm gate terminal, and the lower arm emitter terminal The lower arm emitter terminal protrudes in the same direction, the upper arm gate terminal is disposed closer to the positive electrode terminal than the upper arm emitter terminal, and the lower arm emitter terminal is more negative than the lower arm gate terminal. Located near the terminals.

  According to the present invention, in a configuration in which a plurality of power semiconductor switching elements are mounted like the upper arm / lower arm constituting the power converter, the floating inductance between the gate terminal and the emitter terminal and the bus terminal for supplying power to the gate terminal The imbalance in each arm due to the influence of electromagnetic noise on the emitter terminal can be suppressed.

It is a figure which shows the control block of a hybrid electric vehicle. It is explanatory drawing of the electric circuit structure of the inverter apparatus 140 and the inverter apparatus 142. FIG. It is the perspective view which decomposed | disassembled the whole structure of the power converter device which concerns on embodiment of this invention into each component. FIG. 5 is a layout diagram of the first IGBT 101, the second IGBT 102, the first diode 156, and the second diode 157 according to the present embodiment. It is the figure which showed di / dt, gate current, and induced voltage which generate | occur | produce when the 1st IGBT101 and 2nd IGBT102 which concern on this embodiment are turned off. It is the figure which showed di / dt, gate current, and induced voltage which generate | occur | produce when the 1st IGBT101 and 2nd IGBT102 which concern on this embodiment are turned on. It is the figure which showed di / dt, gate current, and induced voltage which generate | occur | produce when the 1st IGBT101 and 2nd IGBT102 which concern on this embodiment are turned off. It is the figure which showed di / dt, gate current, and induced voltage which generate | occur | produce when the 1st IGBT101 and 2nd IGBT102 which concern on this embodiment are turned on. It is the figure which showed the turn-on loss at the time of making a direct current | flow negative electrode terminal, a gate terminal, and an emitter terminal variable.

  Hereinafter, embodiments will be described with reference to the drawings.

  The power conversion device according to the embodiment of the present invention can be applied to a hybrid vehicle or a pure electric vehicle. As a representative example, the power conversion device according to the embodiment of the present invention is applied to a hybrid vehicle. The control configuration and the circuit configuration of the power converter will be described with reference to FIGS. 1 and 2. FIG. 1 is a diagram showing a control block of a hybrid vehicle.

  The power conversion device according to the embodiment of the present invention is used in a vehicle-mounted power conversion device for a vehicle-mounted electrical system mounted on an automobile, in particular, a vehicle drive electrical system, and has a very severe mounting environment and operational environment. The inverter device will be described as an example. A vehicle drive inverter device is provided in a vehicle drive electrical system as a control device for controlling the drive of a vehicle drive motor, and a DC power supplied from an onboard battery or an onboard power generator constituting an onboard power source is a predetermined AC power. Then, the AC power obtained is supplied to the vehicle drive motor to control the drive of the vehicle drive motor. Further, since the vehicle drive motor also has a function as a generator, the vehicle drive inverter device also has a function of converting the AC power generated by the vehicle drive motor into DC power according to the operation mode. Yes. The converted DC power is supplied to the on-vehicle battery.

  The configuration of the present embodiment is optimal as a power conversion device for driving a vehicle such as an automobile or a truck. However, other power conversion devices such as a power conversion device such as a train, a ship, and an aircraft, and a factory facility are also included. Applicable to industrial power converters used as drive motor control devices, or household power conversion devices used in home solar power generation systems and motor control devices that drive household appliances It is.

  In FIG. 1, a hybrid electric vehicle (hereinafter referred to as “HEV”) 110 is one electric vehicle and includes two vehicle drive systems. One of them is an engine system that uses an engine 120 that is an internal combustion engine as a power source. The engine system is mainly used as a drive source for HEV. The other is an in-vehicle electric system using motor generators 192 and 194 as a power source. The in-vehicle electric system is mainly used as an HEV drive source and an HEV power generation source. The motor generators 192 and 194 are, for example, synchronous machines or induction machines, and operate as both a motor and a generator depending on the operation method.

  A front wheel axle 114 is rotatably supported at the front portion of the vehicle body. A pair of front wheels 112 are provided at both ends of the front wheel axle 114. A rear wheel axle (not shown) is rotatably supported on the rear portion of the vehicle body. A pair of rear wheels are provided at both ends of the rear wheel axle. The HEV of this embodiment employs a so-called front wheel drive system in which the main wheel driven by power is the front wheel 112 and the driven wheel to be driven is the rear wheel. You may adopt.

  A front wheel side differential gear (hereinafter referred to as “front wheel side DEF”) 116 is provided at the center of the front wheel axle 114. The front wheel axle 114 is mechanically connected to the output side of the front wheel side DEF 116. The output shaft of the transmission 118 is mechanically connected to the input side of the front wheel side DEF 116. The front wheel side DEF 116 is a differential power distribution mechanism that distributes the rotational driving force that is shifted and transmitted by the transmission 118 to the left and right front wheel axles 114. The output side of the motor generator 192 is mechanically connected to the input side of the transmission 118. The output side of the engine 120 and the output side of the motor generator 194 are mechanically connected to the input side of the motor generator 192 via the power distribution mechanism 122. Motor generators 192 and 194 and power distribution mechanism 122 are housed inside the casing of transmission 118.

  The motor generators 192 and 194 are synchronous machines having permanent magnets on the rotor, and the AC power supplied to the armature windings of the stator is controlled by the inverter device 142 to drive the motor generators 192 and 194. Is controlled. A battery 136 is electrically connected to the inverter device 142, and power can be exchanged between the battery 136 and the inverter device 142.

  In the present embodiment, the first motor generator unit including the motor generator 192 and the inverter device 142 and the second motor generator unit including the motor generator 194 and the inverter device 142 are provided, and they are selectively used according to the operating state. ing. That is, in the case where the vehicle is driven by the power from the engine 120, when assisting the driving torque of the vehicle, the second motor generator unit is operated as the power generation unit by the power of the engine 120 to generate power. The first electric power generation unit is operated as an electric unit by the obtained electric power. Further, in the same case, when assisting the vehicle speed of the vehicle, the first motor generator unit is operated by the power of the engine 120 as a power generation unit to generate power, and the second motor generator unit is generated by the electric power obtained by the power generation. Operate as an electric unit.

  In the present embodiment, the vehicle can be driven only by the power of the motor generator 192 by operating the first motor generator unit as an electric unit by the electric power of the battery 136. Furthermore, in the present embodiment, the battery 136 can be charged by generating power by operating the first motor generator unit or the second motor generator unit as the power generation unit by the power of the engine 120 or the power from the wheels.

  The inverter device 142, the inverter device 43, and the capacitor module 500 are in a close electrical relationship. Furthermore, there is a common point that measures against heat generation are necessary. It is also desired to make the volume of the device as small as possible. The power conversion device 1 includes an inverter device 142 and a capacitor module 500 in the casing of the power conversion device 1. With this configuration, a small and highly reliable device can be realized.

  Further, by incorporating the inverter device 142 and the capacitor module 500 in one housing, it is effective for simplification of wiring and noise countermeasures. In addition, the inductance of the connection circuit between the capacitor module 500, the inverter device 142, and the inverter device 43 can be reduced, the spike voltage can be reduced, heat generation can be reduced, and heat dissipation efficiency can be improved.

  Next, the electric circuit configuration of the inverter device 142 will be described with reference to FIG. In the embodiment shown in FIGS. 1 and 2, the case where the inverter devices 142 are individually configured will be described as an example. Since the inverter device 142 has the same structure and performs the same function and has the same function, the inverter device 142 will be described here as a representative example.

  The power conversion device 1 according to this embodiment includes an inverter device 140 and a capacitor module 500, and the inverter device 140 includes an inverter device 140 and a control unit 170. The inverter device 140 includes a plurality of upper and lower arm series circuits 150 including a first IGBT 101 (insulated gate bipolar transistor) and a first diode 156 that operate as an upper arm, and a second IGBT 102 and a second diode 157 that operate as a lower arm. And it is the structure connected with the alternating current power line (alternating current bus bar) to the motor generator 192 through the alternating current terminal from the middle point part of each upper and lower arm series circuit. In addition, the control unit 170 includes a driver circuit 174 that drives and controls the inverter circuit, and a control circuit 172 that supplies a control signal to the driver circuit 174 via the signal line 176.

  The first arm 101 of the upper arm 101 and the second IGBT 102 of the lower arm are switching power semiconductor elements that operate in response to the drive signal output from the control unit 170 and convert the DC power supplied from the battery 136 into three-phase AC power. To do. The converted electric power is supplied to the armature winding of the motor generator 192.

  The inverter device 140 is configured by a three-phase bridge circuit, and the upper and lower arm series circuits for three phases are respectively connected between the positive DC terminal and the negative DC terminal that are electrically connected to the positive electrode side and the negative electrode side of the battery 136. Are electrically connected in parallel.

  In the present embodiment, the use of IGBT as the switching power semiconductor element is exemplified. A first diode 156 is electrically connected between the collector electrode and the emitter electrode of the upper arm first IGBT 101 as shown. A second diode 157 is electrically connected between the collector electrode and the emitter electrode of the lower arm second IGBT 102 as shown. The first diode 156 and the second diode 157 have two electrodes, a cathode electrode and an anode electrode, and the first diode 156 has a forward direction from the emitter electrode of the first IGBT 101 toward the collector electrode, The cathode electrode is electrically connected to the collector electrode of the first IGBT 101, and the anode electrode is electrically connected to the emitter electrode of the first IGBT 101.

  In the second diode 157, the cathode electrode is electrically connected to the collector electrode of the second IGBT 102 and the anode electrode is electrically connected to the emitter electrode of the second IGBT 102 so that the direction from the emitter electrode of the second IGBT 102 to the collector electrode is the forward direction. ing. As the switching power semiconductor element, a MOSFET (metal oxide semiconductor field effect transistor) may be used. In this case, the first diode 156 and the second diode 157 are unnecessary.

  The upper and lower arm series circuits are provided for three phases corresponding to each phase winding of the armature winding of the motor generator 192. Each of the three upper and lower arm series circuits 150 forms a U phase, a V phase, and a W phase to the motor generator 192 via an intermediate electrode and an AC terminal that connect the emitter electrode of the first IGBT 101 and the collector electrode of the second IGBT 102, respectively. . The upper and lower arm series circuits are electrically connected in parallel.

  The collector electrode of the first IGBT 101 of the upper arm is connected to the positive capacitor electrode of the capacitor module 500 via the positive terminal (P terminal), and the emitter electrode of the second IGBT 102 of the lower arm is connected to the capacitor module 500 via the negative terminal (N terminal). Each is electrically connected to the negative electrode capacitor electrode (connected by a DC bus bar). The intermediate electrode corresponding to the middle point of each arm (the connection portion between the emitter electrode of the first IGBT 101 of the upper arm and the collector electrode of the second IGBT 102 of the lower arm) is connected to the corresponding phase winding of the armature winding of the motor generator 192. Electrical connection is made via a connector 188.

  The capacitor module 500 is for configuring a smoothing circuit that suppresses fluctuations in the DC voltage generated by the switching operation of the first IGBT 101 and the second IGBT 102. A positive electrode side of the battery 136 is electrically connected to the positive electrode side capacitor electrode of the capacitor module 500 and a negative electrode side of the battery 136 is electrically connected to the negative electrode side capacitor electrode of the capacitor module 500 via a DC connector. As a result, the capacitor module 500 is connected between the collector electrode of the upper arm first IGBT 101 and the positive electrode side of the battery 136, and between the emitter electrode of the lower arm second IGBT 102 and the negative electrode side of the battery 136. Electrically connected in parallel to the arm series circuit.

  The control unit 170 is for operating the IGBT, and generates a timing signal for controlling the switching timing of the first IGBT 101 and the second IGBT 102 based on input information from other control devices or sensors. And a driver circuit 174 that generates a drive signal for switching the first IGBT 101 and the second IGBT 102 based on the timing signal output from the control circuit 172.

  The control circuit 172 includes a microcomputer (hereinafter referred to as “microcomputer”) for calculating the switching timing of the first IGBT 101 and the second IGBT 102. The microcomputer receives as input information a target torque value required for the motor generator 192, a current value supplied to the armature winding of the motor generator 192 from the upper and lower arm series circuit 150, and a magnetic pole of the rotor of the motor generator 192. The position has been entered. The target torque value is based on a command signal output from a host controller (not shown). The current value is detected based on a detection signal output from a current sensor (not shown). The magnetic pole position is detected based on a detection signal output from a rotating magnetic pole sensor (not shown) provided in the motor generator 192. In the present embodiment, the case where the current values of three phases are detected will be described as an example, but the current values for two phases may be detected.

  The microcomputer in the control circuit 172 calculates the d and q axis current command values of the motor generator 192 based on the target torque value, and the calculated d and q axis current command values and the detected d and q The voltage command values for the d and q axes are calculated based on the difference from the current value of the shaft, and the calculated voltage command values for the d and q axes are calculated based on the detected magnetic pole position. Convert to W phase voltage command value. Then, the microcomputer generates a pulse-like modulated wave based on the comparison between the fundamental wave (sine wave) and the carrier wave (triangular wave) based on the voltage command values of the U-phase, V-phase, and W-phase, and the generated modulation The wave is output to the driver circuit 174 as a PWM (pulse width modulation) signal.

  The driver circuit 174 amplifies the PWM signal when driving the lower arm, and drives the upper arm to the gate electrode of the corresponding second IGBT 102 of the lower arm as a drive signal when driving the lower arm. Is shifted to the reference potential level of the upper arm and then the PWM signal is amplified and output as a drive signal to the gate electrode of the corresponding first IGBT 101 of the upper arm. Thereby, each 1st IGBT101 and 2nd IGBT102 perform switching operation | movement based on the input drive signal.

  FIG. 3 is a perspective view in which the entire configuration of the power conversion device according to the embodiment of the present invention is disassembled into components. As shown in FIG. 3, a cooling water channel 19 is provided in the middle of the housing 12, and two sets of openings are formed in the upper part of the cooling water channel 19 side by side in the flow direction. The two inverter devices 140 and the inverter devices 142 are fixed to the upper surface of the cooling water passage 19 so that the two sets of openings are closed by the inverter devices 140 and 142, respectively. Each inverter device 140 and inverter device 142 are provided with fins for heat dissipation, and the fins of each inverter device 140 and inverter device 142 protrude from the opening of the cooling water flow path 19 into the cooling water flow. Yes.

  An opening 404 for facilitating aluminum casting is formed below the cooling water channel 19, and the opening is closed by a cover 420.

  In addition, a lower case 16 is provided in the lower part of the cooling water flow path 19 so as to dissipate heat. It is fixed to the surface of the lower case 16 so as to face the surface. With this structure, cooling can be efficiently performed using the upper surface and the lower surface of the cooling water channel 19, which leads to downsizing of the entire power conversion device.

  When the cooling water from the inlet / outlet pipes 13 and 14 flows through the cooling water flow path 19, the heat dissipating fins of the two inverter devices 140 and the inverter device 142 provided are cooled, and the two inverter devices 140 and 140 The entire inverter device 142 is cooled.

  Further, the casing 12 provided with the cooling water flow path 19 is cooled, whereby the lower case 16 provided at the lower portion of the casing 12 is cooled, and by this cooling, the heat of the capacitor module 500 is transferred to the lower case 16 and the casing. The capacitor module 500 is cooled by being thermally conducted to the cooling water through the body 12.

  The control circuit board 20 and the drive circuit board 22 are disposed above the inverter device 140 and the inverter device 142, the driver circuit 174 is mounted on the drive circuit board 22, and the control circuit board 172 has a CPU. Is installed. Further, a metal base plate 11 is disposed between the drive circuit board 22 and the control circuit board 20, and the metal base plate 11 functions as an electromagnetic shield for a circuit group mounted on both the boards 22 and 20, and also the drive circuit board. The heat generated by the control circuit board 20 and the control circuit board 20 is released and cooled. In this way, the cooling water channel 19 is provided in the central portion of the housing 19, the inverter device 142 for driving the vehicle is arranged on one side thereof, and the inverter device 43 for auxiliary machines is arranged on the other side. Thus, cooling can be efficiently performed in a small space, and the entire power conversion device can be downsized. Further, by making the main structure of the cooling water channel 19 at the center of the casing by casting an aluminum material integrally with the casing 12, the cooling water channel 19 has the effect of increasing the mechanical strength in addition to the cooling effect. Further, by making the aluminum casting, the housing 12 and the cooling water flow path 19 are integrated with each other, heat conduction is improved, and cooling efficiency is improved.

  The drive circuit board 22 is provided with an inter-board connector 23 that passes through the metal base plate 11 and is connected to a circuit group of the control circuit board 20. The control circuit board 20 is provided with a connector 21 for electrical connection with the outside.

  The connector 21 transmits a signal to, for example, a lithium battery module mounted on the vehicle as the battery 136, for example, outside the power conversion device, and a signal indicating the state of the battery from the lithium battery module or a charging state of the lithium battery. A signal is sent. The inter-board connector 23 is provided in order to exchange signals with the control circuit 172 held on the control circuit board 20, and a signal line 176 is provided although not shown. The inverter circuit switching timing signal is transmitted from the control circuit board 20 to the drive circuit board 22 through the connector 176 and the board-to-board connector 23, and the drive circuit board 22 generates a gate drive signal which is a drive signal. Applied to each electrode.

  FIG. 4 is a top view showing a layout of IGBTs and diodes for one phase of the inverter device 140 according to the present embodiment. In this figure, the inverter device 140 is described as a representative example, but the inverter device 142 has the same configuration. In this figure, only the first IGBT 101, the second IGBT 102, the first diode 156, and the second diode 157 to be driven are shown. The configuration of the IGBT device such as a thermistor for detecting the load and temperature connected to the IGBT and a resin or gel for sealing the bus bar is omitted.

  The collector electrode of the first IGBT 101 and the cathode electrode of the first diode 156 are soldered to the first conductor portion 201. The collector electrode of the second IGBT 102 and the cathode electrode of the second diode 157 are soldered to the second conductor portion 202.

  The first conductor portion 201 and the second conductor portion 202 have a wiring pattern laid out on the upper surface of the insulating substrate 213, and the lower surface of the insulating substrate 213 has a solid pattern (not shown) wired on the entire surface of the substrate. The stray inductance reduction effect by current generation can be obtained.

  In this embodiment, the case where the first conductor portion 201 and the second conductor portion 202 are laid out on the upper surface of the insulating substrate 213 is described. However, the insulation performance and the floating inductance reduction effect due to the generation of eddy current can be obtained. If it is a structure, you may use another member.

  The emitter electrode of the first IGBT 101 and the anode electrode of the first diode 156 are electrically connected to the second conductor portion 202 by wire bonding, and the emitter electrode of the second IGBT 102 and the anode electrode of the second diode 157 are wire bonded to the third conductor 203. Are electrically connected. The first IGBT 101 constitutes the upper arm circuit of the inverter circuit. The first diode 156 forms an upper arm circuit of the inverter circuit and is electrically connected to the first IGBT 101 in parallel. The second IGBT 102 constitutes a lower arm circuit of the inverter circuit. The second diode 157 forms a lower arm circuit of the inverter circuit and is electrically connected in parallel with the second IGBT 102.

The second conductor portion 202 is connected to the collector electrode side of the second IGBT 102 and the cathode electrode side of the second diode 157 via a solder material and is disposed on the side portion of the first conductor portion 201. The relay conductor portion 280 connects the emitter electrode of the first IGBT 101, the anode electrode of the first diode 156, and the second conductor portion 202. The relay conductor portion 280 may be configured by wire bonding or a part of the second conductor portion 202.

  The gate terminal of the first IGBT 101 constituting the upper arm is connected to the conductor 207 by wire bonding. The Kelvin emitter terminal that becomes the GND potential with respect to the gate potential is connected to the conductor 208 by wire bonding. The gate terminal of the second IGBT 102 constituting the lower arm is connected to the conductor 209 by wire bonding. The Kelvin emitter terminal that becomes the GND potential with respect to the gate potential is connected to the conductor 210 by wire bonding. The conductor 203 and the conductor 206 are electrically connected.

  The conductor 207 and the conductor 208 that control the gate of the first IGBT 101 are laid out in parallel so as to protrude in the same direction along the conductor 206. Similarly, the conductor 209 and the conductor 210 that control the gate of the second IGBT 102 are laid out in parallel so as to protrude in the same direction along the conductor 205.

  The size relationship between the distance A between the conductor 206 and the conductor 208 and the distance B between the conductor 206 and the conductor 207 is laid out so that the relationship of distance B> distance A is satisfied. The magnitude relationship between the distance A ′ between the conductor 205 and the conductor 209 and the distance B ′ between the conductor 205 and the conductor 210 is laid out so that a relationship of distance B ′> distance A ′ is established. The layout is such that the relationship of distance A = distance A ′ and distance B = distance B ′ is established.

  When switching the first IGBT 101, the magnetic flux change Δφ due to the steep di / dt generated in the conductor 206 generates an induced voltage ΔV in the conductor 207 and the conductor 208 laid out in parallel in the same direction. Similarly, when switching the IGBT 102, the magnetic flux change Δφ due to the steep di / dt generated in the conductor 205 generates an induced voltage ΔV in the conductor 209 and the conductor 210 that are laid out in parallel in the same direction.

  The induced voltage ΔV generated in the conductors laid out in parallel is opposite to the relationship between the distances between the conductors. When the distance between the conductors is the same, the induced voltage ΔV has the same magnitude. As an example, in the magnitude relationship of the distance between conductors B> distance A, the magnitude relationship of induced voltage ΔV (distance B) <induced voltage ΔV (distance A) is established.

  FIG. 5 shows the di / dt (broken arrow in the figure) of the main terminal and the polarity of the gate current (in the figure) when the first IGBT 101 constituting the upper arm is turned off or the second IGBT 102 constituting the lower arm is turned off. It is the figure which showed the polarity (solid line arrow in a figure) of the induced voltage and the induced voltage. Although the operation of turning off the upper arm IGBT and the lower arm IGBT at the same time when the inverter is driven is rare, the operation of turning off the upper and lower arm IGBTs is also shown in the figure for the sake of explanation.

  When the first IGBT 101 constituting the upper arm is turned off, the gate current flows from the conductor 208 connected to the Kelvin emitter terminal to the conductor 207 connected to the gate terminal via the first IGBT 101. At this time, an induced voltage is generated in the direction of increasing the gate current flowing in the conductor 208 due to di / dt generated in the conductor 206. That is, an induced voltage is generated such that a current flows in the same direction as the gate current flowing in the conductor 208. At this time, an induced voltage is generated in the conductor 207 in the direction of decreasing the gate current. However, since there is a relationship of distance B> distance A from the conductor 206, the polarity of the induced voltage in the direction of increasing the gate current is changed. Absent.

  When the second GBT 102 constituting the lower arm is turned off, the gate current flows from the conductor 210 connected to the Kelvin emitter terminal to the conductor 209 connected to the gate terminal via the second IGBT 102. At this time, an induced voltage is generated in the direction of increasing the gate current flowing through the conductor 209 due to di / dt generated in the conductor 205. At this time, an induced voltage is generated in the direction of decreasing the gate current in the conductor 210, but since there is a magnitude relationship of the distance B ′> distance A ′ from the conductor 205, the polarity of the induced voltage in the direction of increasing the gate current. Will not change.

  More preferably, since the layout is such that the relationship of distance A = distance A ′ and distance B = distance B ′ is established, an induced voltage that increases the gate current of the upper arm IGBT 101 and the gate of the lower arm IGBT 102 are arranged. The magnitudes of the induced voltages that increase the current are equal. Accordingly, the gate drive speeds of the first IGBT 101 of the upper arm and the second IGBT 102 of the lower arm are equal, and a balance between the switching speeds of the upper arm and the lower arm can be ensured.

  FIG. 6 shows di / dt (broken arrow in the figure) of the main terminal and the polarity of the gate current (in the figure) when the first IGBT 101 constituting the upper arm is turned on and when the second IGBT 102 constituting the lower arm is turned on. It is the figure which showed the polarity (solid line arrow in a figure) of the induced voltage and the induced voltage. Although the operation of turning on the upper arm IGBT and the lower arm IGBT at the same time when the inverter is driven is rare, the operation of turning on the upper and lower arm IGBTs is also shown in the figure for explanation.

  When the first IGBT 101 is turned on, the gate current flows from the conductor 207 connected to the gate terminal to the conductor 208 connected to the Kelvin emitter terminal via the IGBT 101. At this time, an induced voltage is generated in the direction of increasing the gate current flowing in the conductor 208 due to di / dt generated in the conductor 206. At this time, an induced voltage is generated in the conductor 207 in the direction of decreasing the gate current. However, since there is a relationship of distance B> distance A from the conductor 206, the polarity of the induced voltage in the direction of increasing the gate current is changed. Absent.

  When the second IGBT 102 is turned on, the gate current flows from the conductor 209 connected to the gate terminal to the conductor 210 connected to the Kelvin emitter terminal via the IGBT 102. At this time, an induced voltage is generated in the direction of increasing the gate current flowing through the conductor 209 due to di / dt generated in the conductor 205. At this time, an induced voltage is generated in the direction of decreasing the gate current in the conductor 210, but since there is a magnitude relationship of the distance B ′> distance A ′ from the conductor 205, the polarity of the induced voltage in the direction of increasing the gate current. Will not change.

  As a more desirable configuration, since the layout is such that the relationship of distance A = distance A ′ and distance B = distance B ′ is established, an induced voltage that increases the gate current of the upper arm IGBT 101 and the second IGBT 102 of the lower arm The magnitudes of the induced voltages that increase the gate current are equal. Accordingly, the gate drive speeds of the first IGBT 101 of the upper arm and the second IGBT 102 of the lower arm are equal, and a balance between the switching speeds of the upper arm and the lower arm can be ensured.

  FIG. 7 reverses the positional relationship between the conductor 207 connected to the gate terminal of the upper arm described in FIG. 5 and the conductor 206 of the conductor 208 connected to the Kelvin emitter terminal. The di / dt of the main terminal when the first IGBT 101 and the second IGBT 102 are turned off in a layout in which the positional relationship of the distance from the conductor 205 of the conductor 209 connected to the gate terminal and the conductor 210 connected to the Kelvin emitter terminal is also reversed. It is the figure which showed the polarity (broken line arrow in a figure) of the polarity (broken line arrow in a figure), the polarity of a gate current (dotted line arrow in a figure), and an induced voltage.

  The only difference from FIG. 5 is that the polarity of the induced voltage relative to the direction of the gate current is reversed for both the upper arm and the lower arm. Also in this configuration, the gate drive speeds of the first IGBT 101 of the upper arm and the second IGBT 102 of the lower arm are equal, and a balance between the switching speeds of the upper arm and the lower arm can be ensured.

  FIG. 8 reverses the positional relationship between the conductor 207 connected to the gate terminal of the upper arm described in FIG. 6 and the conductor 206 of the conductor 208 connected to the Kelvin emitter terminal. The di / dt of the main terminal when the first IGBT 101 and the second IGBT 102 are turned on in the layout in which the positional relationship of the distance from the conductor 205 of the conductor 209 connected to the gate terminal and the conductor 210 connected to the Kelvin emitter terminal is also reversed. It is the figure which showed the polarity (broken line arrow in a figure) of the polarity (broken line arrow in a figure), the polarity of a gate current (dotted line arrow in a figure), and an induced voltage.

  The only difference from FIG. 6 is that the polarity of the induced voltage relative to the direction of the gate current is reversed for both the upper arm and the lower arm. Also in this configuration, the gate drive speeds of the first IGBT 101 of the upper arm and the second IGBT 102 of the lower arm are equal, and a balance between the switching speeds of the upper arm and the lower arm can be ensured.

FIG. 9 is a diagram showing the turn-on loss and the turn-off loss when the distance between the DC negative terminal and the gate terminal is variable and when the distance between the DC negative terminal and the Kelvin emitter terminal is variable. The magnitude relationship between the switching losses and the magnitude relationship between the switching speeds are negative, and the magnitude relationship between the switching speeds and the magnitude relationship between the gate currents are positive. That is, the negative electrode terminal and the gate terminal induced voltage is generated in the direction of increasing the gate current can closer transfected, the induced voltage is generated in the direction of decreasing the gate current when the negative electrode terminal and the Kelvin emitter terminal approaches Is shown.

  When the distance between the negative electrode terminal and the gate terminal or the Kelvin emitter terminal is greater than 2 cm, the influence of the induced voltage due to di / dt is almost negligible. That is, in this embodiment, a greater effect is manifested in the structure of the power semiconductor module in which there is a region where the distance between the positive electrode terminal or negative electrode terminal through which a large current flows and the gate terminal or Kelvin emitter terminal is 2 cm or less.

DESCRIPTION OF SYMBOLS 1 Power converter device 43,142 Inverter device 101 1st IGBT (insulated gate type bipolar transistor)
102 2nd IGBT (Insulated Gate Bipolar Transistor)
110 hybrid electric vehicle 112 front wheel 114 front wheel axle 116 front wheel side differential gear 118 transmission 120 engine 122 power distribution mechanism 136 battery 140 inverter circuit unit 156 upper arm diode 157 lower arm diode 172 control circuit 174 driver circuit 176 signal lines 192 and 194 Motor generator 201 First conductor part 202 Second conductor part 204 AC terminal 205 DC negative terminal 206 DC positive terminal 207 Upper arm gate signal terminal 208 Upper arm emitter signal terminal 209 Lower arm gate signal terminal 210 Lower arm emitter signal Terminal 213 Insulating substrate 280 Relay conductor part 283 Wire bonding

Claims (5)

A power semiconductor module having an upper arm circuit portion and a lower arm circuit portion of an inverter circuit for converting DC power into AC power,
The upper arm circuit unit includes an upper arm power semiconductor element, a positive electrode terminal to which the DC power is supplied, an AC terminal to which the AC power is supplied, and an upper arm connected to a gate of the upper arm power semiconductor element. A gate terminal, and an upper arm emitter terminal connected to an emitter of the upper arm power semiconductor element,
The lower arm circuit unit includes a lower arm power semiconductor element, a negative terminal supplied with the DC power, an AC terminal supplied with the AC power, and a lower arm connected to a gate of the lower arm power semiconductor element. A gate terminal, and a lower arm emitter terminal connected to the emitter of the lower arm power semiconductor element,
The positive terminal, the upper arm gate terminal, and the upper arm emitter terminal protrude in the same direction,
The negative terminal, the lower arm gate terminal, and the lower arm emitter terminal protrude in the same direction,
The upper arm emitter terminal is disposed closer to the positive terminal than the upper arm gate terminal;
The power semiconductor module, wherein the lower arm gate terminal is disposed closer to the negative electrode terminal than the lower arm emitter terminal. A power semiconductor module having an upper arm circuit portion and a lower arm circuit portion of an inverter circuit for converting DC power into AC power,
The upper arm circuit unit includes an upper arm power semiconductor element, a positive electrode terminal to which the DC power is supplied, an AC terminal to which the AC power is supplied, and an upper arm connected to a gate of the upper arm power semiconductor element. A gate terminal, and an upper arm emitter terminal connected to an emitter of the upper arm power semiconductor element,
The lower arm circuit unit includes a lower arm power semiconductor element, a negative terminal supplied with the DC power, an AC terminal supplied with the AC power, and a lower arm connected to a gate of the lower arm power semiconductor element. A gate terminal, and a lower arm emitter terminal connected to the emitter of the lower arm power semiconductor element,
The positive terminal, the upper arm gate terminal, and the upper arm emitter terminal protrude in the same direction,
The negative terminal, the lower arm gate terminal, and the lower arm emitter terminal protrude in the same direction,
The upper arm gate terminal is disposed closer to the positive terminal than the upper arm emitter terminal,
The lower arm emitter terminal is disposed closer to the negative electrode terminal than the lower arm gate terminal ,
The power semiconductor module that wherein the length of the positive electrode terminal and the distance between the upper arm gate terminal and the negative terminal and the lower arm emitter terminal are equal. The power semiconductor module according to claim 1 or 2,
A power semiconductor module, wherein a distance between the positive terminal and the upper arm emitter terminal is equal to a distance between the negative terminal and the lower arm gate terminal. The power semiconductor module according to claim 1 ,
The power semiconductor module, wherein a distance between the positive terminal and the upper arm gate terminal is equal to a distance between the negative terminal and the lower arm emitter terminal. The power semiconductor module according to claim 1,
A power semiconductor module, wherein a distance between the positive terminal and the upper arm emitter terminal and a distance between the negative terminal and the lower arm gate terminal are 2 cm or less.