JP6405604B2 - Thermoelectric element and manufacturing method thereof - Google Patents

Description

  The present invention relates to a thermoelectric element and a manufacturing method thereof.

  Thermoelectric elements include thermoelectric conversion elements that use the Seebeck effect and Peltier elements that use the Peltier effect.

  The thermoelectric conversion element has a structure in which, for example, an n-type thermoelectric member and a p-type thermoelectric member are sandwiched between two heat transfer plates. The n-type thermoelectric member and the p-type thermoelectric member are electrically connected in series by the electrode provided on the heat transfer plate side, and when a temperature difference is given between one heat transfer plate and the other heat transfer plate Generates electric power according to the temperature difference.

  The Peltier element also has a structure in which, for example, an n-type thermoelectric member and a p-type thermoelectric member are sandwiched between two heat transfer plates. The n-type thermoelectric member and the p-type thermoelectric member are electrically connected in series by the electrode provided on the heat transfer plate side, and when a voltage is applied to the n-type thermoelectric member and the p-type thermoelectric member connected in series, 2 A temperature difference occurs between the heat transfer plates.

  A general thermoelectric element (macro thermoelectric element) uses a thermoelectric member manufactured by machining a thermoelectric material. However, since the thermoelectric material is brittle, it is easily damaged during machining, and it is difficult to further reduce the size.

  Therefore, in recent years, it has been proposed to manufacture a small thermoelectric element using MEMS (Micro Electro Mechanical Systems) technology capable of processing on the order of submicrons. Such a small thermoelectric element is called a micro thermoelectric element.

  The micro thermoelectric element has been studied for application as a portable micro energy source, application to a sensor, etc., application as a local cooling device, and the like. In particular, micro thermoelectric elements that generate electric power due to temperature differences are expected to be used as maintenance-free power sources that can be incorporated into sensor net composite devices to generate power using waste heat from electronic devices and the body temperature of living bodies. Has been.

Japanese Patent Laid-Open No. 11-274592 JP 2011-124805 A

  It is an object of the present invention to provide a thermoelectric element that is difficult to transmit heat from one side to the other side and that is not easily damaged even when stress or impact force is applied, and a method for manufacturing the thermoelectric element.

According to one aspect of the disclosed technology, a plurality of columnar thermoelectric members regularly arranged in a plan view are connected to end portions in the length direction of the thermoelectric members, and the plurality of thermoelectric members are electrically connected in series. Between the electrodes to be connected and a plurality of adjacent thermoelectric members, a part in the length direction and a part in the circumferential direction of the thermoelectric member are in contact with each other and in a plan view. possess a strip-shaped reinforcing member, the reinforcing member to contact between thermoelectric element adjacent the respective thermoelectric elements are provided, characterized in that arranged in a grid via the heat conductive member arranged The

  According to another aspect of the disclosed technology, a step of forming a plurality of through holes in the substrate, a step of forming a thermoelectric member by filling the through holes with a thermoelectric material, and the substrate in the thickness direction Etching partway, applying an insulating material to the etched surface of the substrate to form a reinforcing material, removing the substrate, and connecting an electrode to the end of the thermoelectric member There is provided a method of manufacturing a thermoelectric device having the step of:

  According to the thermoelectric element and the method of manufacturing a thermoelectric element according to the above aspect, since the thermoelectric members are connected by the reinforcing material that contacts a part of the length of the thermoelectric member, stress or impact force is reinforced. Dispersed through the material. Thereby, it is possible to obtain a thermoelectric element in which heat is hardly transmitted from one side to the other side and is not easily damaged even when stress or impact force is applied.

FIG. 1 is a diagram illustrating an example of a micro thermoelectric element. Drawing 2 is a sectional view (the 1) showing the manufacturing method of the thermoelectric device concerning an embodiment. Drawing 3 is a sectional view (the 2) showing the manufacturing method of the thermoelectric device concerning an embodiment. FIG. 4 is a schematic plan view showing the arrangement of the n-type thermoelectric member, the p-type thermoelectric member, the reinforcing material, and the electrodes of the micro thermoelectric element according to the embodiment. FIG. 5 is a cross-sectional view showing an example of a thermoelectric element (modified example) having no heat transfer plate. FIG. 6 is a schematic plan view showing an example (modification) of a thermoelectric element in which reinforcing materials are alternately arranged on the upper and lower portions of the thermoelectric member. FIG. 7 is a schematic plan view showing an example (modified example) in which reinforcing materials having different Young's moduli are alternately arranged for each row. FIG. 8 is a cross-sectional view showing an example of a reinforcing material having a shape whose center portion is narrower than the connection portion. FIGS. 9A to 9D are schematic views showing thermoelectric elements of Comparative Example, Example 1, Example 2, and Example 3. FIG. FIG. 10 is a diagram showing Young's modulus and Poisson's ratio of SU-8, epoxy resin, and BiTe. FIG. 11 is a diagram illustrating a result of simulation calculation of the maximum Mises stress of the comparative example, the example 1, the example 2, and the example 3.

  Hereinafter, before describing the embodiment, a preliminary matter for facilitating understanding of the embodiment will be described.

  FIG. 1 is a diagram illustrating an example of a micro thermoelectric element.

  The micro thermoelectric element 10 illustrated in FIG. 1 includes two heat transfer plates 11a and 11b, and a plurality of n-type thermoelectric members 12 and p-type thermoelectric members 13 disposed between the heat transfer plates 11a and 11b. Have

  The n-type thermoelectric members 12 and the p-type thermoelectric members 13 are arranged alternately at a predetermined pitch. Further, the n-type thermoelectric member 12 and the p-type thermoelectric member 13 are electrically connected in series by electrodes 14 provided on the heat transfer plates 11a and 11b side. The lead electrodes 15 a and 15 b are connected to end portions of the n-type thermoelectric member 12 and the p-type thermoelectric member 13 connected in series.

In the heat Denmoto element 10 having such a structure, for example, given a temperature difference between one of the heat transfer plate and (11a or 11b) the other heat transfer plate and (11b or 11a), the power by the Seebeck effect occurs Then, electric power can be taken out from the extraction electrodes 15a and 15b.

  By the way, in the micro thermoelectric element 10, since the length of the thermoelectric members 12 and 13 is extremely short, heat easily moves from one heat transfer plate to the other heat transfer plate via the thermoelectric members 12 and 13. When heat is transferred from one heat transfer plate to the other heat transfer plate, the temperature difference between the heat transfer plates 11a and 11b decreases, and the power generation efficiency of the micro thermoelectric element 10 decreases.

  In order to suppress the movement of heat through the thermoelectric members 12 and 13 and increase the power generation efficiency of the micro thermoelectric element 10, the diameter of the thermoelectric members 12 and 13 (when the thermoelectric member is a square member, the width is the same below) It is conceivable to reduce. However, when the diameters of the thermoelectric members 12 and 13 are reduced, the strength is reduced, and when the stress or impact force is applied, the thermoelectric members 12 and 13 are easily damaged.

  For example, it is conceivable to use a reinforcing member provided with a hole and dispose the thermoelectric members 12 and 13 in the hole of the reinforcing member to prevent the thermoelectric members 12 and 13 from being damaged. However, in that case, since heat moves through the reinforcing member, the power generation efficiency of the micro thermoelectric element 10 decreases.

  In the following embodiments, a thermoelectric element that is difficult to transfer heat from one side to the other side and that is not easily damaged even when stress or impact force is applied, and a method for manufacturing the thermoelectric element will be described.

(Embodiment)
2 and 3 are cross-sectional views showing the method of manufacturing a thermoelectric element according to the embodiment in the order of steps.

  First, as shown in FIG. 2A, a substrate 21 is prepared, and a plurality of through holes 22 are formed in the substrate 21 at a predetermined pitch.

  In the present embodiment, a silicon wafer having a thickness of 50 μm to 500 μm is used as the substrate 21. Then, after forming a photoresist film (not shown) on the substrate 21, the photoresist film is exposed using an exposure mask provided with a predetermined pattern. Thereafter, development processing is performed to expose the portion of the substrate 21 where the through hole is to be formed.

Next, using the photoresist film as an etching mask, for example, reactive ion etching (RIE) using SF ₆ gas is performed to form through holes 22 in the substrate 21. After the through hole 22 is formed, the photoresist film on the substrate 21 is removed with a solvent such as acetone.

  The diameter of the through hole 22 is, for example, 5 μm to 100 μm, and the interval between the adjacent through holes 22 is, for example, 100 μm. The aspect ratio of the through hole 22 is, for example, about 2-40.

  Next, as shown in FIG. 2B, a stencil mask 23 is disposed on the substrate 21, and an n-type thermoelectric material is filled only in a predetermined through-hole 22 by an aerosol deposition method. Form.

As the n-type thermoelectric material, for example, Bi ₂ Te ₃ , oxide thermoelectric materials such as NaxCoO and AZO (Aluminum-doped Zinc Oxide) can be used. In addition, a compound semiconductor such as CoSb, SiGe, and PbTe, or a single metal such as Bi, Pt, Au, Cu, and Ni may be used. In this embodiment, bismuth telluride (Bi ₂ Te ₃ ) having a particle size of 200 nm is used as the n-type thermoelectric material.

  Next, as shown in FIG. 2C, a stencil mask (not shown) is disposed on the substrate 21, and the remaining through holes 22 are filled with a p-type thermoelectric material by an aerosol deposition method. The thermoelectric member 25 is formed.

As the p-type thermoelectric material, for example, an oxide thermoelectric material such as Bi _0.3 Sb _1.7 Te ₃ or Ca ₃ Co ₄ O ₉ can be used. In addition, a compound semiconductor such as CoSb, SiGe, and PbTe, or a single metal such as Bi, Pt, Au, Cu, and Ni may be used.

In this embodiment, Bi _0.3 Sb _1.7 Te ₃ having a particle size of 200 nm is used as the p-type thermoelectric material. Further, in this embodiment, as shown in FIG. 2C, the n-type thermoelectric material and the p-type thermoelectric material are placed in the through holes 22 so that the n-type thermoelectric members 24 and the p-type thermoelectric members 25 are alternately arranged. Fill.

  In the present embodiment, the thermoelectric material is filled in the through hole 22 by using the aerosol deposition method, but the thermoelectric material may be filled in the through hole 22 by a hot press method or other methods. However, when the diameter of the through hole 22 is small and the aspect ratio is large, it is preferable to use an aerosol deposition method in order to reliably fill the thermoelectric material into the through hole 22.

  When the thermoelectric materials 24 and 25 are formed by filling the through-hole 22 with the thermodeposition material by the aerosol deposition method, the post-treatment such as heat treatment (annealing) or pressurizing treatment (pressing treatment) is performed, so that the thermoelectric member The thermoelectric characteristics of 24 and 25 can be improved. For example, after the thermoelectric material is filled in the through hole 22 to form the thermoelectric members 24 and 25, it is preferable to perform a heat treatment in a vacuum or an inert gas at a temperature of 400 ° C. for about 1 hour.

  After forming the n-type thermoelectric member 24 and the p-type thermoelectric member 25 in this way, the surface of the substrate 21 is polished to remove residues attached to the surface and reduce the unevenness of the substrate 21 itself.

Next, as shown in FIG. 2D, the substrate 21 is etched to about half of its thickness. In this embodiment, since a silicon wafer is used as the substrate 21, the substrate 21 is etched by reactive ion etching using, for example, SF ₆ as an etching gas. If the etching rate is about 10 μm / min, the substrate 21 can be etched by about 250 μm by performing the etching for about 25 minutes.

  Next, as shown in FIG. 3A, a reinforcing material 26 that communicates between the thermoelectric members 24 and 25 is formed on the substrate 21 between the thermoelectric members 24 and 25. It is important that the reinforcing material 26 is insulative, has high mechanical strength and impact resistance, and has low thermal conductivity.

  In this embodiment, a two-component epoxy resin diluted with an organic solvent is used as ink, and the resin is deposited on the substrate 21 between the thermoelectric members 24 and 25 by an ink jet printer. Thereafter, the substrate 21 is heat-treated at a temperature of, for example, 150 ° C. for 1 minute to cure the resin, and the reinforcing material 26 is obtained. The thickness of the reinforcing material 26 is, for example, about 20 μm.

  As the material of the reinforcing material 26, various resins and rubbers can be used in addition to the epoxy resin. Moreover, you may form the reinforcing material 26 by methods other than inkjet printing.

  Next, as shown in FIG. 3B, the electrode 29 is attached to the end portions of the thermoelectric members 24 and 25 protruding from the substrate 21, and the heat transfer plate 28a is further attached thereon. It is important that the heat transfer plate 28a has high heat transfer efficiency, and at least the surface on the thermoelectric members 24 and 25 side is insulative. For example, AlN or Si can be used as the heat transfer plate 28a. In the present embodiment, a silicon plate whose surface is covered with an insulating film is used as the heat transfer plate 28a.

  The electrode 29 only needs to be in ohmic contact with the thermoelectric members 24 and 25, and has a two-layer structure such as Cr / Cu, Ti / Au, or Ti / Cu, for example.

Next, as shown in FIG. 3C, the substrate 21 is completely removed by, for example, reactive ion etching using SF ₆ .

  Next, as shown in FIG. 3 (d), the other ends of the thermoelectric members 24 and 25, the electrode 29, and the extraction electrodes 29a and 29b are attached, and heat transfer is further performed thereon (lower side in FIG. 3 (d)). The board 28b is attached. In the present embodiment, the heat transfer plate 28b is also a silicon plate whose surface is covered with an insulating film, like the heat transfer plate 28a.

  In this way, the micro thermoelectric element 20 according to this embodiment is completed. When a temperature difference is given between the heat transfer plates 28a and 28b of the micro thermoelectric element 20 according to the present embodiment, electric power is generated by the Seebeck effect, and the electric power can be taken out from the extraction electrodes 29a and 29b.

  FIG. 4 is a schematic plan view showing the arrangement of the n-type thermoelectric member 24, the p-type thermoelectric member 25, the reinforcing material 26, and the electrode 29 of the micro thermoelectric element 20 according to this embodiment manufactured by the above-described method. As shown in FIG. 4, a large number of thermoelectric members 24 and 25 are arranged between the heat transfer plates 28 a and 28 b, and the adjacent thermoelectric members 24 and 25 are connected by a reinforcing material 26. The electrode 29 electrically connects two thermoelectric members, that is, the adjacent n-type thermoelectric member 24 and p-type thermoelectric member 25.

  According to the present embodiment, the n-type thermoelectric member 24 and the p-type thermoelectric member 25 are formed by filling the through holes 22 of the substrate 21 to form the n-type thermoelectric member 24 and the p-type thermoelectric member 25. There is little possibility of damaging the thermoelectric member.

  In addition, according to the present embodiment, since the reinforcing material 26 is disposed between the thermoelectric members 24 and 25, the stress and the impact force are distributed via the reinforcing material 26 even when a stress and an impact force are applied. Is done. Thereby, breakage of the thermoelectric members 24 and 25 is suppressed.

  Further, in the thermoelectric element 20 of the present embodiment, the reinforcing material 26 is in contact with only a part of the thermoelectric members 24 and 25 in the length direction, so that the reinforcing material from one heat transfer plate to the other heat transfer plate. Heat transfer through 26 is suppressed. Thereby, favorable power generation efficiency is securable.

(Modification)
In the above-described embodiment, the case where the n-type thermoelectric member 24 and the p-type thermoelectric member 25 are disposed between the heat transfer plates 28a and 28b has been described. However, when the thermoelectric element is attached to an insulating member, FIG. As illustrated in FIG.

  Further, in the above-described embodiment, the case where the reinforcing material 26 is joined to substantially the center in the length direction of each of the thermoelectric members 24 and 25 has been described, but the contact position between the reinforcing material 26 and the thermoelectric members 24 and 25 is as follows. It does not have to be in the center.

  Furthermore, although the above-mentioned embodiment demonstrated the case where all the reinforcing materials 26 were arrange | positioned on the same plane, all the reinforcing materials 26 do not need to be arrange | positioned on the same plane.

Heat Denmoto child 20a illustrated in FIG. 6, the length direction of the first placed on a plane, the thermoelectric element 24, 25 a reinforcing member 26b perpendicular reinforcement 26a in the longitudinal direction of the thermoelectric element 24 and 25 It arrange | positions on the 2nd plane orthogonal to. In such a thermoelectric member 20a, for example, the substrate 21 is etched to 1/3 of its thickness, and then the upper reinforcing material 26a is formed, and then the substrate 21 is etched to 2/3 to form the lower reinforcing material 26b. Can be formed.

  In FIG. 6, the reinforcing members 26a and 26b are arranged on two planes, but the reinforcing members may be arranged on three or more planes. Further, as shown in FIG. 9C, the number of reinforcing members 32 arranged between adjacent thermoelectric members 31 is, for example, 1, 2, 1, 2,... Along the arrangement direction of the thermoelectric members 31. Thus, it may change at a constant cycle.

  Furthermore, it is not necessary for all the reinforcing members 26 to be made of the same material. For example, a plurality of reinforcing plates having different Young's moduli may be appropriately disposed.

  FIG. 7 shows an example in which reinforcing members 26c and 26d having different Young's moduli are alternately arranged for each row. Here, the reinforcing material 26c is formed of a two-component epoxy resin, and the reinforcing material 26d is formed of SU-8 used as a photoresist.

  Further, as illustrated in FIG. 8, the reinforcing member 26 preferably has a shape whose center portion is narrower than the connection portion with the thermoelectric members 24 and 25. Thereby, the movement of the heat between the thermoelectric members 24 and 25 can be suppressed.

(effect)
With respect to the thermoelectric elements having the structures shown in FIGS. 9A to 9D, the maximum Mises stress was calculated by simulation to investigate the effect of the embodiment.

  FIG. 9A shows a thermoelectric element of a comparative example having a structure in which no reinforcing material is provided between the thermoelectric members 31. FIG. 9B shows the thermoelectric element of Example 1 having a structure in which a reinforcing material 32 made of an epoxy resin is arranged at the center in the length direction of the thermoelectric member 31.

  Further, FIG. 9C shows a thermoelectric element of Example 2 having a structure in which one reinforcing member 32 is arranged on one side of the thermoelectric member 31 and two reinforcing members 32 are arranged on the other side. All the reinforcing members 32 are epoxy resins.

  FIG. 9D shows a structure in which one reinforcing member 32a made of epoxy resin is arranged on one side of the thermoelectric member 31, and two reinforcing members 32b made of SU-8 are arranged on the other side. 3 is a thermoelectric element of Example 3.

  The maximum Mises stress generated inside the thermoelectric member 31 was calculated by simulation for each of the thermoelectric elements of the comparative example, Example 1, Example 2 and Example 3 having the structures shown in FIGS.

  In the simulation calculation, the Young's modulus and Poisson's ratio of SU-8, epoxy resin, and BiTe, which are thermoelectric member materials, shown in FIG. 10 were used. The thermoelectric member 31 had a width of 10 μm, a length of 100 μm, and an aspect ratio of 10. Furthermore, in the simulation calculation, the maximum Mises stress generated inside the thermoelectric member 31 when a stress of 100 kPa was applied to the electrode material side surface under the condition that the lower electrode was fixed as a boundary condition was compared. The results are summarized in FIG.

  As can be seen from FIG. 11, the maximum Mises stress is as large as about 5800 kPa in the thermoelectric element of the comparative example without the reinforcing material. On the other hand, as for the thermoelectric elements of Examples 1-3, the maximum Mises stress is reduced by 1000 kPa or more as compared with the comparative example. From this, it was confirmed that the thermoelectric elements of Examples 1 to 3 have higher impact resistance than the comparative example.

  The following additional notes are disclosed with respect to the above embodiments.

(Appendix 1) A plurality of columnar thermoelectric members;
An electrode connected to an end of the thermoelectric member in a length direction, and electrically connecting the plurality of thermoelectric members in series;
A thermoelectric element comprising: a reinforcing material that contacts a part of a length direction of the thermoelectric member and communicates between the adjacent thermoelectric members.

  (Supplementary Note 2) The thermoelectric member includes an n-type thermoelectric member made of an n-type thermoelectric material and a p-type thermoelectric member made of a p-type thermoelectric material, and the electrode includes the n-type thermoelectric member and the p-type thermoelectric member. The thermoelectric elements according to supplementary note 2, characterized by being connected alternately.

  (Appendix 3) The thermoelectric element according to appendix 1 or 2, wherein the thermoelectric members are arranged between a pair of heat transfer plates.

  (Supplementary Note 4) A part of the reinforcing member is disposed on a first plane orthogonal to the length direction of the thermoelectric member, and at least another part is a second orthogonal to the length direction of the thermoelectric member. The thermoelectric element according to any one of appendices 1 to 4, wherein the thermoelectric element is disposed on a plane.

(Additional remark 5) Any one of Additional remarks 1 thru | or 4 characterized by the number of the said reinforcing material arrange | positioned between adjacent thermoelectric members changing with the fixed period along the sequence direction of the said thermoelectric members. heat Denmoto child according to item.

(Supplementary Note 6) a part of the thermoelectric said reinforcing member disposed between members, heat Denmoto child according to any one of Appendices 1 to 5, characterized in that another reinforcing member and the Young's modulus is different .

(Supplementary Note 7) The reinforcing material is thermally Denmoto child according to any one of Appendices 1 to 6, characterized in that said a slender shape central portion than the connection portion of the thermoelectric element.

(Appendix 8) A step of forming a plurality of through holes in the substrate;
Filling the through hole with a thermoelectric material to form a thermoelectric member;
Etching the substrate halfway along its thickness direction;
Applying an insulating material to the etched surface of the substrate to form a reinforcing material;
Removing the substrate;
And a step of connecting an electrode to an end of the thermoelectric member.

  (Supplementary note 9) The method of manufacturing a thermoelectric element according to supplementary note 8, wherein the through hole has a diameter of 5 to 100 µm and an aspect ratio of 2 to 40.

  (Supplementary note 10) The thermoelectric element manufacturing method according to supplementary note 8 or 9, wherein the thermoelectric material is filled in the through hole by an aerosol deposition method.

  (Additional remark 11) After filling the said thermoelectric material in the said through-hole, heat processing or a pressurization process is implemented, The manufacturing method of the thermoelectric element of Additional remark 10 characterized by the above-mentioned.

  (Supplementary note 12) The method for manufacturing a thermoelectric element according to any one of supplementary notes 8 to 11, wherein in the step of forming the reinforcing material, the insulating material is applied to the substrate using an inkjet printer. .

  (Additional remark 13) The manufacturing method of the thermoelectric element of any one of Additional remark 8 thru | or 12 characterized by using a silicon wafer as said board | substrate.

  10 ... micro thermoelectric element, 11a. DESCRIPTION OF SYMBOLS 11b ... Heat-transfer plate, 12 ... N-type thermoelectric member, 13 ... P-type thermoelectric member, 14 ... Electrode, 15a, 15b ... Extraction electrode, 20 ... Micro thermoelectric element, 21 ... Substrate, 22 ... Through-hole, 23 ... Stencil mask 24 ... n-type thermoelectric member, 25 ... p-type thermoelectric member, 26, 26a, 26b, 26c, 26d, 32, 32a, 32b ... reinforcement, 28a, 28b ... heat transfer plate, 29 ... electrode, 29a, 29b ... Extraction electrode.

Claims (9)

A plurality of columnar thermoelectric members regularly arranged in a plan view;
An electrode connected to an end of the thermoelectric member in a length direction, and electrically connecting the plurality of thermoelectric members in series;
A strip-shaped reinforcing material in plan view that contacts a part of the thermoelectric member in the length direction and a part of the circumferential direction between the plurality of adjacent thermoelectric members and communicates between the adjacent thermoelectric members. And
The reinforcing element that communicates between the adjacent thermoelectric members is arranged in a lattice shape via the arranged thermoelectric members.   A part of the reinforcing material is arranged on a first plane orthogonal to the length direction of the thermoelectric member, and at least another part is arranged on a second plane orthogonal to the length direction of the thermoelectric member. The thermoelectric element according to claim 1, wherein the thermoelectric element is formed.   3. The thermoelectric element according to claim 1, wherein the number of the reinforcing members arranged between adjacent thermoelectric members changes at a constant period along the arrangement direction of the thermoelectric members. Among the reinforcing materials that communicate between the adjacent thermoelectric members, the reinforcing material that is disposed between some of the adjacent thermoelectric members is the reinforcing material that is disposed between the other adjacent thermoelectric members. heat Denmoto child according to any one of claims 1 to 3 Young's modulus are different from each other and.   The thermoelectric element according to any one of claims 1 to 4, wherein the reinforcing member has a shape whose central portion is narrower than a connection portion with the thermoelectric member. Forming a plurality of through holes in the substrate;
Filling the through hole with a thermoelectric material to form a thermoelectric member;
Etching the substrate halfway along its thickness direction;
Applying an insulating material to the etched surface of the substrate to form a reinforcing material;
Removing the substrate;
And a step of connecting an electrode to an end of the thermoelectric member.   The method of manufacturing a thermoelectric element according to claim 6, wherein the through hole has a diameter of 5 μm to 100 μm and an aspect ratio of 2 to 40.   The thermoelectric element manufacturing method according to claim 6 or 7, wherein the thermoelectric material is filled in the through-hole by an aerosol deposition method.   The method of manufacturing a thermoelectric element according to claim 6, wherein the step of forming the reinforcing material includes applying the insulating material to the substrate using an ink jet printer.

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