JP6384270B2 - Semiconductor module - Google Patents

Description

  The present invention relates to a semiconductor module including a resin-encapsulated semiconductor device.

  Conventionally, as described in Patent Document 1, a semiconductor module including a resin-sealed semiconductor device is known. The semiconductor device includes an electronic component, a mold resin portion that seals the electronic component, and a first terminal (main terminal and control terminal) that is electrically connected to the electronic component and protrudes from one surface of the mold resin portion. And have.

Japanese Patent No. 4506848

  Generally, the first terminal described above is soldered to a connection target (for example, a circuit board). Further, it is electrically connected to a connector mounted on the circuit board. Furthermore, it is connected to the connection target via a rigid relay member such as a bus bar.

  For this reason, when vibration is applied from the connection target side, a stress acts on the first terminal, and there is a possibility that the electrical connection reliability of the first terminal is lowered. Particularly, in the case of a control terminal, since the width is narrower and the strength is lower than that of a main terminal through which a large current flows, connection reliability tends to be lowered.

  Therefore, in view of the above problems, the present invention improves the electrical connection reliability of the first terminal for external connection protruding from the mold resin portion in the semiconductor module including the resin-encapsulated semiconductor device. Objective.

  The invention disclosed herein employs the following technical means to achieve the above object. Note that the reference numerals in parentheses described in the claims and in this section indicate a corresponding relationship with specific means described in the embodiments described later as one aspect, and limit the technical scope of the invention. Not what you want.

  One of the disclosed inventions is an electronic component (20a, 20b), a mold resin portion (21) for sealing the electronic component, and an external connection that is electrically connected to the electronic component and protrudes from one surface of the mold resin portion. And a resin-encapsulated semiconductor device (11) having first terminals (23a, 23b).

And a 1st terminal is electrically connected with the 2nd terminal (40a, 40b) arrange | positioned at the housing (41) of a female connector (12), and a mold resin part is a part of itself. The first hole (39, 50) is provided as a fixing portion for fixing the housing to the semiconductor device, and the second hole (44), which is a through hole formed in the housing, communicates with the first hole. The fixing member (45) is inserted into both holes in the arranged state, and the housing is fixed to the semiconductor device .

  According to this, the housing of the female connector is fixed to the mold resin portion of the semiconductor device in a state where the first terminal and the second terminal are electrically connected. Therefore, for example, even if vibration is applied to the semiconductor module, it is possible to suppress stress concentration on the first terminal. That is, the electrical connection reliability of the first terminal can be improved.

  In addition, since the mold resin part has a fixing part as a part of itself, it is easy to replace the semiconductor device when a failure occurs in the semiconductor device. It can also be improved.

  Moreover, since it has a fixing | fixed part as a part of mold resin part, while forming a mold resin part, a fixing | fixed part can be formed. Therefore, the manufacturing process can be simplified and the number of parts can be reduced.

  In another disclosed invention, the mold resin portion has a groove portion (38) as a fixing portion, and a protrusion portion (43) formed in the housing is locked in the groove portion, so that the housing is a semiconductor device. It is characterized by being fixed to.

  According to this, since the fixing structure by locking is adopted, the electrical connection reliability of the first terminal can be improved while simplifying the configuration.

1 is a perspective view showing a schematic configuration of a semiconductor module according to a first embodiment. It is the perspective view of the semiconductor module seen from another angle. It is a perspective view which shows schematic structure of a semiconductor device. It is sectional drawing which follows the IV-IV line of FIG. In FIG. 3, it is the top view which abbreviate | omitted the mold resin part and the insulating sheet. It is sectional drawing which follows the VI-VI line of FIG. It is a perspective view which shows schematic structure of a female connector. It is the perspective view of the female connector seen from another angle. It is sectional drawing which follows the IX-IX line of FIG. It is sectional drawing which follows the XX line of FIG. In the semiconductor module which concerns on 2nd Embodiment, it is a perspective view which shows schematic structure of a semiconductor device. In FIG. 11, it is the figure which expanded the groove part periphery. It is a perspective view which shows schematic structure of a female connector. In the semiconductor module which concerns on 3rd Embodiment, it is a perspective view which shows schematic structure of a semiconductor device. In FIG. 14, it is the top view to which the through-hole periphery was expanded. It is a perspective view which shows schematic structure of a female connector. It is the perspective view of the female connector seen from another angle. It is a perspective view which shows the fixation structure of a semiconductor device and a female connector. It is a perspective view which shows the fixation structure of a semiconductor device and a female connector. It is a side view which shows schematic structure of the semiconductor module which concerns on 4th Embodiment. It is a side view which shows schematic structure of the semiconductor module which concerns on 5th Embodiment. It is sectional drawing which shows schematic structure of the semiconductor module which concerns on 6th Embodiment. It is a top view which shows schematic structure of a semiconductor device among the semiconductor modules which concern on 7th Embodiment. FIG. 24 is a diagram showing an example of a method for manufacturing the semiconductor device shown in FIG. 23. It is a perspective view which shows schematic structure of a semiconductor device among the semiconductor modules which concern on 8th Embodiment. It is a perspective view which shows schematic structure of a metal collar. It is sectional drawing which shows schematic structure of a semiconductor device among the semiconductor modules which concern on 9th Embodiment. It is a top view which shows schematic structure of a semiconductor device among the semiconductor modules which concern on 10th Embodiment.

  Embodiments of the present invention will be described below with reference to the drawings. In the following embodiments, common or related elements are given the same reference numerals. Further, the thickness direction of the semiconductor chip is Z direction, orthogonal to the Z direction, and the extending direction of the main terminal and the control terminal is indicated as Y direction. A direction orthogonal to both the Z direction and the Y direction is referred to as an X direction. The XY plane defined by the X direction and the Y direction described above is a plane orthogonal to the Z direction, and unless otherwise specified, the shape along the XY plane is a planar shape.

(First embodiment)
First, a schematic configuration of the semiconductor module will be described with reference to FIGS. As shown in FIGS. 1 and 2, the semiconductor module 10 includes a semiconductor device 11 and a female connector 12 that fits into the semiconductor device 11. FIG. 2 shows a state in which FIG. 1 is reversed in the Z direction.

  First, the semiconductor device 11 will be described with reference to FIGS.

  The semiconductor device 11 has two arms connected in series among the six arms constituting the three-phase inverter, that is, upper and lower arms for one phase, and is configured as a so-called 2-in-1 package. The semiconductor device 11 is incorporated in an inverter for driving a motor for driving a vehicle, for example. That is, the semiconductor module 10 including the semiconductor device 11 is arranged directly on the engine or in the vicinity of the engine in the vehicle.

  As shown in FIGS. 3 to 6, the semiconductor device 11 includes two semiconductor chips 20 a and 20 b. Insulated gate bipolar transistors (IGBT) and commutation diodes (FWD) as switching elements are formed in the semiconductor chips 20a and 20b, respectively. These semiconductor chips 20a and 20b correspond to the electronic components recited in the claims.

  The semiconductor chips 20a and 20b both have a so-called vertical structure in which current flows in the Z direction, and have electrodes on both sides in the Z direction. The semiconductor chips 20a and 20b have a collector electrode on one side in the Z direction, and have an emitter electrode and a control electrode (pad) on the side opposite to the one side. The collector electrode and the emitter electrode are the main electrodes, the collector electrode also serves as the FWD cathode electrode, and the emitter electrode also serves as the FWD anode electrode.

  These semiconductor chips 20 a and 20 b are integrally sealed by a mold resin portion 21. The mold resin portion 21 is formed by injecting a resin into a mold (not shown) and molding it. For example, it can be formed by a transfer molding method using a thermosetting resin such as an epoxy resin.

  As shown in FIG. 3, the mold resin portion 21 has a substantially rectangular planar shape. And the terminal for external connection protrudes from the side surface which connects the one surface 21a in the Z direction, and the back surface 21b opposite to this one surface 21a. In the present embodiment, main terminals 22a to 22d and control terminals 23a and 23b are provided as terminals for external connection. Among these terminals 22a to 22d, 23a, and 23b, the control terminals 23a and 23b correspond to a first terminal described in the claims.

  The main terminals 22a to 22d are electrically connected to the main electrodes of the semiconductor chips 20a and 20b. The P terminal 22a is electrically connected to the high potential side of a DC power source (not shown). The N terminal 22b is electrically connected to the low potential (ground) of the DC power supply. The output terminals 22c and 22d are terminals for outputting to the motor. For the output terminals 22c and 22d, a configuration having only one of them may be employed. Thus, the main terminal 22a is also referred to as a P terminal 22a, and the main terminal 22b is also referred to as an N terminal 22b. The main terminals 22c and 22d are also shown as output terminals 22c and 22d.

  These main terminals 22a to 22d protrude from the side surface 21c of the mold resin portion 21 and extend in the Y direction. The plurality of main terminals 22a to 22d are arranged side by side in the X direction.

  The control terminal 23a has a plurality of terminals and is electrically connected to the control electrode of the semiconductor chip 20a. The control terminal 23b has a plurality of terminals and is electrically connected to the control electrode of the semiconductor chip 20b. The control terminals 23a and 23b protrude from the side surface 21d opposite to the side surface 21c of the mold resin portion 21 and extend in the Y direction. The control terminals 23a are arranged side by side in the X direction, and the control terminals 23b are also arranged side by side in the X direction. The control terminals 23a and 23b are arranged side by side in the X direction.

  The main terminals 22a to 22d and the control terminals 23a and 23b are configured as a part of the lead frame 24 as shown in FIG. The main terminals 22a to 22d are terminals through which a large current flows, and the control terminals 23a and 23b are terminals that transmit signals such as gate drive signals. Therefore, the width orthogonal to the respective longitudinal directions is sufficiently narrower at the control terminals 23a and 23b than at the main terminals 22a to 22d.

  The lead frame 24 includes heat sinks 25a and 25b in addition to the main terminals 22a to 22d and the control terminals 23a and 23b. The heat sinks 25a and 25b are disposed on the collector electrode formation surface side of the semiconductor chips 20a and 20b. The heat sinks 25a and 25b perform the function of radiating the heat generated by the semiconductor chip 20a to the outside of the semiconductor device 11, and also perform the electrical relay function between the semiconductor chip 20a and the corresponding P terminal 22a. On the other hand, the heat sink 25b functions to dissipate heat generated by the semiconductor chip 20b to the outside of the semiconductor device 11, and also functions as an electrical relay between the semiconductor chip 20b and the corresponding output terminal 22d. For this reason, the heat sinks 25a and 25b are formed using at least a metal material in order to ensure thermal conductivity and electrical conductivity. For example, it consists of metal materials excellent in thermal conductivity and electrical conductivity, such as copper, copper alloy, and aluminum alloy.

  The heat sinks 25a and 25b have substantially the same thickness in the Z direction, and one surface of the semiconductor chips 20a and 20b is substantially flush with each other. The collector electrode of the semiconductor chip 20a is connected to one surface of the heat sink 25a via the solder 26. Similarly, the collector electrode of the semiconductor chip 20b is connected to one surface of the heat sink 25b via the solder 26. Thus, the heat sinks 25a and 25b are thermally and electrically connected to the corresponding semiconductor chips 20a and 20b.

  On the other hand, the surfaces of the heat sinks 25a and 25b opposite to the semiconductor chips 20a and 20b are heat radiation surfaces 25a1 and 25b1 exposed from one surface 21a of the mold resin portion 21, as shown in FIG.

  As shown in FIG. 5, in the lead frame 24, the P terminal 22a is connected to the heat sink 25a, and the output terminal 22d is connected to the heat sink 25b. Moreover, the heat sink 25b has the protrusion part 25b2 which protrudes in the X direction at the heat sink 25a side, as shown in FIG.4 and FIG.5.

  Terminals 27a and 27b are arranged on the opposite sides of the semiconductor chips 20a and 20b to the heat sinks 25a and 25b, respectively. The terminals 27a and 27b serve to electrically relay the semiconductor chips 20a and 20b and heat sinks 29a and 29b described later. Therefore, the terminals 27a and 27b are formed using at least a metal material in order to ensure thermal conductivity and electrical conductivity. For example, it is made of a metal material having excellent thermal conductivity and electrical conductivity such as copper and molybdenum.

  The terminals 27a and 27b also function as spacers that secure a predetermined interval in the Z direction between the semiconductor chips 20a and 20b and heat sinks 29a and 29b described later. The terminals 27a and 27b have substantially the same thickness in the Z direction. The terminal 27a is connected to the emitter electrode of the semiconductor chip 20a via the solder 28. Similarly, the terminal 27b is connected to the emitter electrode of the semiconductor chip 20b through the solder 28.

  Heat sinks 29a and 29b are disposed on the surfaces of the terminals 27a and 27b opposite to the semiconductor chips 20a and 20b, respectively. The heat sinks 29a and 29b perform the same functions as the heat sinks 25a and 25b described above. That is, the heat generated by the semiconductor chips 20a and 20b is radiated to the outside of the semiconductor device 11. The heat sink 29a performs an electrical relay function between the semiconductor chip 20a and the corresponding output terminal 22c. The heat sink 29b performs an electrical relay function between the semiconductor chip 20b and the corresponding N terminal 22b. For this reason, the heat sinks 29a and 29b are also formed using at least a metal material in order to ensure thermal conductivity and electrical conductivity. For example, it consists of metal materials excellent in thermal conductivity and electrical conductivity, such as copper, copper alloy, and aluminum alloy. The heat sinks 29a and 29b and the heat sinks 25a and 25b described above correspond to the heat sinks recited in the claims.

  The heat sinks 29a and 29b have substantially the same thickness in the Z direction. The heat sink 29 a is connected to the terminal 27 a via the solder 30. Similarly, the heat sink 29 b is connected to the terminal 27 b via the solder 30. On the other hand, the surfaces of the heat sinks 29a and 29b opposite to the semiconductor chips 20a and 20b are heat radiation surfaces 29a1 and 29b1 exposed from the back surface 21b of the mold resin portion 21, as shown in FIG.

  As shown in FIGS. 4 and 5, the heat sink 29 a has a protruding portion 29 a 2 that protrudes toward the heat sink 29 b in the X direction. And the protrusion part 25b2 and protrusion part 29a2 of the above-mentioned heat sink 25b are connected via the solder 31. FIG. By connecting the protrusions 25b2 and 29a2, the emitter electrode of the semiconductor chip 20a on the upper arm side and the collector electrode of the semiconductor chip 20b on the lower arm side are electrically connected.

  Further, as shown in FIG. 5, the heat sink 29a has a protruding portion 29a3 protruding toward the output terminal 22c in the Y direction. And the output terminal 22c is connected to this protrusion part 29a3. Similarly, the heat sink 29b has a protruding portion 29b2 that protrudes toward the N terminal 22b in the Y direction. The N terminal 22b is connected to the protruding portion 29b2.

  The lead frame 24 has islands 32a and 32b in addition to the main terminals 22a to 22d, the control terminals 23a and 23b, and the heat sinks 25a and 25b. Driver ICs 33a and 33b are arranged on one side of the islands 32a and 32b, respectively. The driver ICs 33a and 33b generate gate drive signals (analog signals) for controlling the drive of the semiconductor chips 20a and 20b based on digital signals from a microcomputer (not shown).

  A driver IC 33a is mounted on the island 32a via a joining member such as a solder 34. On the other hand, a driver IC 33b is mounted on the island 32b via a joining member such as a solder 34. The driver ICs 33a and 33b are electrically connected to the control electrodes (pads) of the corresponding semiconductor chips 20a and 20b through bonding wires 35. The driver ICs 33a and 33b are electrically connected to the corresponding control terminals 23a and 23b via the bonding wires 36. In this embodiment, as an example, the island 32a is connected to a part of the plurality of control terminals 23a, and the island 32b is connected to a part of the plurality of control terminals 23b.

  As described above, in the semiconductor device 11, the semiconductor chips 20 a and 20 b, a part of the lead frame 24, the terminals 27 a and 27 b, a part of the heat sinks 29 a and 29 b, and the driver ICs 33 a and 33 b are integrally formed by the mold resin part 21. It is sealed. The heat radiation surfaces 25a1 and 25b1 of the heat sinks 25a and 25b are exposed from one surface 21a of the mold resin portion 21, and the heat radiation surfaces 29a1 and 29b1 of the heat sinks 29a and 29b are exposed from the rear surface 21b.

  In addition, about the heat radiating surface 25a1, 25b1, the mold resin part 21 is shape | molded so that the heat sinks 25a and 25b may not be exposed, and after that, a part of heat sink 25a, 25b is cut with the mold resin part 21, and heat radiating surface 25a1, 25b1 may be exposed from one surface 21a. Similarly, the heat radiating surfaces 29a1 and 29b1 may be exposed from the back surface 21b. Further, the heat radiating surfaces 25a1 and 25b1 may be exposed from the one surface 21a without molding the mold resin portion 21 so that the heat radiating surfaces 25a1 and 25b1 are in contact with the cavity wall surface of the mold. Similarly, the heat radiating surfaces 29a1 and 29b1 may be exposed from the back surface 21b.

  In the present embodiment, an insulating sheet 37 having electrical insulating properties is attached to one surface 21a of the mold resin portion 21 so as to cover the heat radiating surfaces 25a1 and 25b1. Similarly, an insulating sheet 37 is also attached to the back surface 21b of the mold resin portion 21 so as to cover the heat radiation surfaces 29a1 and 29b1.

  Moreover, in this embodiment, as shown in FIG.3 and FIG.6, the groove part 38 for fixing the female connector 12 is formed in the one surface 21a and the back surface 21b of the mold resin part 21, respectively. The groove 38 extends in the X direction. Further, in the Y direction, it is formed at a position between the side surface 21d from which the control terminals 23a and 23b protrude and the heat sinks 25a, 25b, 29a and 29b. The groove part 38 of the one surface 21a and the groove part 38 of the back surface 21b are formed at equal positions in the Y direction. The cross-sectional shape defined by the Y direction and the Z direction of the groove portion 38 is substantially wedge-shaped, and the angle formed by the side on the side surface 21d side and the Y direction is slightly smaller than 90 degrees (for example, 85 degrees). It has become. In the present embodiment, the groove portion 38 corresponds to a fixing portion described in the claims.

  Next, the female connector 12 will be described with reference to FIGS.

  As shown in FIGS. 7 and 8, the female connector 12 includes terminals 40 a and 40 b and a resin housing 41 that holds the terminals 40 a and 40 b. The terminals 40a and 40b correspond to the second terminals described in the claims.

  The terminal 40a is a terminal connected to the control terminal 23a, and the terminal 40b is a terminal connected to the control terminal 23b. As shown in FIG. 9, the terminals 40a and 40b are provided in the vicinity of an inner conductor 42a made of a conductive material, a covering portion 42b for insulatingly covering the inner conductor 42a, and an end portion of the inner conductor 42a on the semiconductor device 11 side. And a metal collar 42c. The inner conductor 42a is almost entirely covered with a covering portion 42b, and both ends are exposed from the covering portion 42b. Of the terminals 40a and 40b, the portion where the inner conductor 42a is covered with the covering portion 42b has flexibility. As the flexible terminals 40a and 40b, for example, a stranded wire can be adopted.

  The inner conductor 42a is inserted partway through the cylindrical metal collar 42c. In this inserted state, the inner conductor 42a is electrically connected to the metal collar 42c. As described above, the inner conductor 42a is disposed partway along the metal collar 42c, and the female contact portion 42d with the control terminals 23a and 23b is formed by the portion of the metal collar 42c where the inner conductor 42a is not disposed. .

The housing 41 is formed by molding a resin material, and includes a main body portion 41a, an accommodation space 41b, and a wall portion 41c. As this resin material, a thermoplastic resin or a thermosetting resin may be used. In the present embodiment, the housing 41 is formed by injection molding using a thermoplastic resin.
The main body portion 41a is a portion that holds the terminals 40a and 40b, and has a substantially rectangular parallelepiped shape. The terminals 40a and 40b are drawn out from one surface of the main body 41a, and the surface opposite to the one surface forms the bottom surface of the accommodation space 41b. One end of the terminals 40a and 40b is exposed on the bottom surface of the accommodation space 41b, and the control terminals 23a and 23b can be electrically connected to the female contact portion 42d when fitted.

  The wall 41c is formed at the edge of the surface forming the bottom surface of the storage space 41b so as to surround the storage space 41b and extends along the Y direction. That is, the wall 41c is provided in a rectangular tube shape. Thus, the accommodation space 41b is formed by the wall portion 41c and the main body portion 41a. In this accommodation space 41b, a part of the semiconductor device 11, specifically, at least a part of the control terminals 23a and 23b and a part of the mold resin part 21 are accommodated.

  Protrusions 43 are respectively formed on portions of the wall portion 41c that face the one surface 21a and the back surface 21b of the mold resin portion 21, that is, on the wall portion 41c facing each other in the Z direction. The protrusion 43 is engaged with the groove 38 when the semiconductor device 11 and the female connector 12 are fitted. In the present embodiment, the protrusion 43 is formed near the protruding tip of the wall 41c protruding from the main body 41a. Moreover, in the wall part 41c which opposes, the projection part 43 is formed in the mutually equal position in the Y direction. The cross-sectional shape defined by the Y direction and the Z direction of the protrusion 43 is substantially wedge-shaped, and the angle formed between the side on the main body 41a side and the Y direction is slightly smaller than 90 degrees (for example, 85). Degree).

  Next, a method for fitting the semiconductor device 11 and the female connector 12 will be described with reference to FIG.

  First, the semiconductor device 11 and the female connector 12 described above are prepared. As shown in FIG. 10, the side surface 21d of the mold resin portion 21 from which the control terminals 23a and 23b protrude is opposed to the bottom surface of the housing space 41b of the female connector 12, and the one surface 21a and the back surface 21b are projections. The semiconductor device 11 and the female connector 12 are positioned so as to face the wall portion 41c on which 43 is formed. In this positioning state, the semiconductor device 11 and the female connector 12 are relatively moved in the Y direction, and the control terminals 23a and 23b and the mold resin portion 21 are inserted into the accommodation space 41b. At this time, the wall portion 41c serves as a guide, and the control terminals 23a and 23b are guided to the female contact portion 42d, and the control terminals 23a and 23b are inserted into the metal collar 42c and electrically connected to the female contact portion 42d. The Further, the protrusion 43 is engaged with the groove 38. The locking portion formed by the groove portion 38 and the projection portion 43 is formed in the vicinity of the electrical connection portion between the control terminals 23a and 23b and the terminals 40a and 40b.

  Thus, the semiconductor module 10 in which the female connector 12 is fitted to the semiconductor device 11 can be obtained.

  Next, effects of the semiconductor module 10 according to the present embodiment will be described.

  In the present embodiment, the control terminal 23a, 23b of the semiconductor device 11 and the terminal 40a, 40b of the female connector 12 are electrically connected, and the projection 43 is engaged with the groove 38 to lock the housing of the female connector 12. 41 is fixed to the mold resin portion 21 of the semiconductor device 11.

  Therefore, even if the vibration of the vehicle (for example, engine) is applied to the semiconductor module 10, it is possible to suppress the stress from being concentrated on the control terminals 23a and 23b. That is, the electrical connection reliability of the control terminals 23a and 23b can be improved. In addition, stress concentrates on the control terminals 23 a and 23 b, thereby preventing the mold resin part 21 from being peeled off.

  In particular, in the present embodiment, since a fixing structure by locking is employed, the electrical connection reliability of the control terminals 23a and 23b can be improved while simplifying the configuration.

  In addition, a locking portion formed by the groove portion 38 and the projection portion 43 is provided in the vicinity of the electrical connection portion between the control terminals 23a and 23b having a narrower width and lower strength than the main terminals 22a to 22d and the terminals 40a and 40b. . Therefore, it is possible to improve the electrical connection reliability of the control terminals 23a and 23b that are easily affected by vibration or the like.

  In addition, the mold resin part 21 has the groove part 38 as a part of itself, and the housing 41 has the projection part 43 as a part of itself. For this reason, for example, when a failure occurs in the semiconductor device 11, the semiconductor device 11 can be easily replaced. Similarly, when a failure occurs in the female connector 12, the female connector 12 can be easily replaced. Therefore, for example, maintenance can be improved as compared with a configuration in which the control terminal is soldered to the circuit board.

  Moreover, since it has the groove part 38 as a part of mold resin part 21, while forming the mold resin part 21, the groove part 38 can be formed. Therefore, the manufacturing process can be simplified and the number of parts can be reduced.

  Moreover, in this embodiment, the part which protrudes outside from the housing 41 among the terminals 40a and 40b of the female connector 12 has flexibility. Therefore, the external force applied to the control terminals 23a and 23b can be absorbed by the flexible terminals 40a and 40b. For this reason, compared with the structure in which a female connector has a rigid terminal, the electrical connection reliability of the control terminals 23a and 23b can be further improved.

  Moreover, in this embodiment, the groove part 38 is formed in the position between the side surface 21d of the mold resin part 21 and the heat radiation surfaces 25a1, 25b1, 29a1, and 29b1 in the Y direction. The heat radiation surfaces 25 a 1, 25 b 1, 29 a 1, 29 b 1 are exposed from the female connector 12 with the female connector 12 fitted to the semiconductor device 11. Therefore, the heat dissipation of the semiconductor device 11 can be improved while improving the electrical connection reliability of the control terminals 23a and 23b.

  In the present embodiment, an example in which the semiconductor module 10 includes the female connector 12 in addition to the semiconductor device 11 has been described. However, even if the semiconductor module 10 includes only the semiconductor device 11 that fits with the female connector 12, the same effect can be obtained.

(Second Embodiment)
In the present embodiment, description of portions common to the semiconductor module 10 shown in the first embodiment is omitted.

  The semiconductor module 10 according to this embodiment is basically the same as the semiconductor module 10 shown in the first embodiment. The difference is the position where the groove 38 and the protrusion 43 are formed.

  As shown in FIGS. 11 and 12, in the semiconductor device 11, the groove portions 38 are formed not on the one surface 21a and the back surface 21b of the mold resin portion 21, but on the side surface 21e and the side surface 21f opposite to the side surface 21e. The side surfaces 21e and 21f are side surfaces excluding the side surface 21c from which the main terminals 22a to 22d protrude and the side surface 21d from which the control terminals 23a and 23b protrude. Further, in the side surfaces 21e and 21f, the groove portion 38 is formed at a position between the side surface 21d and the heat radiation surfaces 25a1, 25b1, 29a1, and 29b1 in the Y direction.

  As shown in FIG. 13, in the female connector 12, the protrusions 43 are formed on the wall portions 41 c that face each other in the X direction, not on the wall portions 41 c that face each other in the Z direction.

  Even with such a configuration, the same effects as those of the first embodiment can be obtained. Also in the present embodiment, the semiconductor module 10 may be configured to have only the semiconductor device 11 that fits with the female connector 12.

(Third embodiment)
In the present embodiment, description of portions common to the semiconductor module 10 shown in the first embodiment is omitted.

  The semiconductor module 10 according to this embodiment is substantially the same as the semiconductor module 10 shown in the first embodiment. The difference is that the mold resin portion 21 and the housing 41 are not fixed by locking but a fixing structure using a fixing pin 45 described later is adopted. The fixing pin 45 corresponds to a fixing member described in the claims.

  As shown in FIGS. 14 and 15, the semiconductor device 11 has a through hole 39 for fixing the housing 41 in place of the locking groove 38. In the present embodiment, the through hole 39 corresponds to the fixing portion or the first hole described in the claims. The through hole 39 is formed so as to penetrate the mold resin portion 21 in the Z direction, and an end portion thereof opens to the one surface 21a and the back surface 21b.

  In the present embodiment, like the above-described groove portion 38, in the Y direction, it is formed at a position between the side surface 21d from which the control terminals 23a, 23b protrude and the heat radiating surfaces 25a1, 25b1, 29a1, 29b1. Further, three through holes 39 are formed side by side in the X direction. As shown in FIG. 15, the three through holes 39 are formed in the X direction at a position between the control terminals 23a and 23b, a position outside the control terminal 23a, and a position outside the control terminal 23b, respectively. Yes.

  As shown in FIGS. 16 and 17, the female connector 12 has a through hole 44 instead of the locking projection 43. The through hole 44 corresponds to the second hole described in the claims. The through hole 44 is located at a position that overlaps with the mold resin portion 21 during fitting in the wall portion 41c of the housing 41, specifically, a position that overlaps with the corresponding through hole 39 in a plane defined by the X direction and the Y direction. Is formed. In the present embodiment, the through holes 44 are respectively formed in the wall portions 41c facing each other in the Z direction, and the through holes 44 of the wall portions 41c facing each other are overlapped in a plane defined by the X direction and the Y direction. Three pairs of through-holes 44 (a total of six through-holes 44) are formed.

  Next, a method for fitting the semiconductor device 11 and the female connector 12 will be described with reference to FIGS.

  The process is the same as in the first embodiment until the control terminals 23a and 23b and the mold resin portion 21 are inserted into the accommodation space 41b and the control terminals 23a and 23b are electrically connected to the female contact portion 42d. In this connected state, the corresponding through holes 39 and 44 overlap each other. Then, as shown in FIG. 18, the fixing pin 45 is inserted into the overlapping through holes 39 and 44. The fixing pin 45 can be made of metal or resin. In the present embodiment, a fixing pin 45 having a head having an enlarged diameter on one end side is used. When inserted into the through hole 44 from the end opposite to the head, the fixing pin 45 is inserted through the through hole 44, the through hole 39, and the through hole 44 in this order, as shown in FIG. The end protrudes from the housing 41. The housing 41 is fixed to the mold resin portion 21 by caulking the protruding tip, for example.

  As described above, the same structure as that of the first embodiment can be obtained by the fixing structure using the fixing pin 45.

  The fixing member is not limited to the fixing pin 45. For example, a bolt of a fastening means including a bolt and a nut may be used as the fixing member. Rivets can also be used. A fixing pin 45 made of resin may be adopted and fixed by heat caulking.

  Also in the present embodiment, the semiconductor module 10 may include only the semiconductor device 11 that fits with the female connector 12.

(Fourth embodiment)
In the present embodiment, description of portions common to the semiconductor module 10 shown in the first embodiment is omitted.

  In the semiconductor module 10 according to the present embodiment, in addition to the semiconductor device 11 and the female connector 12, as shown in FIG. 20, a cooler 13 for cooling the semiconductor device 11 and terminals 40a and 40b of the female connector 12 are electrically connected. Circuit board 14 to be connected. The circuit board 14 is formed with a control circuit that controls driving of elements formed in the semiconductor chips 20a and 20b. As a fitting structure of the semiconductor device 11 and the female connector 12, any of the first to third embodiments can be applied.

  The semiconductor module 10 includes a plurality of semiconductor devices 11, and the plurality of semiconductor devices 11 and the coolers 13 are alternately stacked. For each semiconductor device 11, coolers 13 are arranged on both sides in the Z direction, and the semiconductor device 11 can dissipate heat on both sides. In FIG. 20, the semiconductor device 11 for three phases is included.

  The female connectors 12 fitted to the corresponding semiconductor devices 11 are respectively arranged on the same side in the Y direction, and the terminals 40a and 40b are extended in the same direction. The terminals 40 a and 40 b are electrically connected to the common circuit board 14. The terminals 40a and 40b shown in the present embodiment are also flexible. In FIG. 20, only the terminal 40a is shown for convenience.

  According to this embodiment, in addition to the effect shown in the said embodiment, there can exist the following effect.

  In the structure in which the semiconductor devices 11 and the coolers 13 are alternately stacked and the semiconductor devices 11 are cooled, variations in the thicknesses of the semiconductor devices 11 are superimposed and affect the connection with the circuit board 14. In the present embodiment, the control terminals 23a and 23b are electrically connected to the terminals 40a and 40b even if a positional shift occurs between the connection portions of the circuit board 14 due to thickness variations and assembly stress occurs. At the same time, the housing 41 is fixed to the mold resin portion 21. Therefore, the electrical connection reliability of the control terminals 23a and 23b can be ensured.

  In particular, in this embodiment, since the flexible terminals 40a and 40b are used, even if the above-described laminated structure for cooling is employed, the assembly stress is suppressed, and consequently the electrical connection of the control terminals 23a and 23b. Reliability can be improved.

  Further, the coolers 13 are arranged in multiple stages, and the cooler 13 is located on both sides of the semiconductor device 11. Therefore, the heat generated by the semiconductor chips 20a and 20b can be effectively radiated.

  A configuration in which a connector is mounted on the circuit board 14 and the terminals 40a and 40b are connected to the connector may be employed. Further, the semiconductor module 10 may be configured without the circuit board 14.

(Fifth embodiment)
In the present embodiment, description of portions common to the semiconductor module 10 shown in the fourth embodiment is omitted.

  In the present embodiment, the circuit board 14 is also cooled by the cooler 13 as shown in FIG. As in the fourth embodiment, the semiconductor devices 11 for three phases are arranged side by side in the Z direction, and the semiconductor devices 11 and the coolers 13 are alternately stacked. In addition, a circuit board 14 is disposed on one end side of the three-phase semiconductor devices 11 disposed side by side in the Z direction. Coolers 13 are also arranged on both sides of the circuit board 14.

  The female connectors 12 fitted to the corresponding semiconductor devices 11 are respectively arranged on the same side in the Y direction, and the terminals 40a and 40b are extended in the same direction. The terminals 40 a and 40 b have flexibility and are electrically connected to a common circuit board 14 sandwiched between the coolers 13. In FIG. 21, only the terminal 40a is shown for convenience.

  According to this, in addition to the effects described in the fourth embodiment, the circuit board 14 can also be cooled. In addition, by using the flexible terminals 40a and 40b, the circuit board 14 and the semiconductor device 11 arranged side by side in the Z direction can be electrically connected. Therefore, the connection structure between the circuit board 14 and the semiconductor device 11 can be simplified.

(Sixth embodiment)
In the present embodiment, description of portions common to the semiconductor module 10 shown in the third embodiment is omitted.

  In 3rd Embodiment, the example in which the through-hole 39 is formed in the mold resin part 21 as a 1st hole was shown. On the other hand, in this embodiment, as shown in FIG. 22, a non-through hole 50 is formed as the first hole.

  In this embodiment, the hole 50 is formed in each of the one surface 21a and the back surface 21b of the mold resin portion 21. Of the holes 50, the holes 50a that open on the one surface 21a are formed with a predetermined depth so as not to open on the back surface 21b. Moreover, the hole 50b opened to the back surface 21b is formed with a predetermined depth so as not to open to the one surface 21a and to communicate with the hole 50a opened to the one surface 21a. The holes 50a and 50b are formed at the same position in the plane defined by the X direction and the Y direction. The mold resin portion 21 has three sets of holes 50a and 50b formed at the same position.

  Like the through hole 39, the hole 50 is formed at a position between the side surface 21d from which the control terminals 23a and 23b protrude and the heat radiating surfaces 25a1, 25b1, 29a1 and 29b1 in the Y direction. In FIG. 22, only the heat radiating surfaces 25a1 and 29a1 are shown.

  The female connector 12 is formed with a through hole 44 as a second hole, as in the third embodiment. The through hole 44 corresponds to a hole 50 (50a, 50b) corresponding to the position of the wall 41c of the housing 41 that overlaps with the mold resin portion 21 when fitted, specifically, in a plane defined by the X direction and the Y direction. It is formed in the position which overlaps.

  The method for fitting the semiconductor device 11 and the female connector 12 is basically the same as the method described in the third embodiment. That is, the control terminals 23a and 23b and the mold resin portion 21 are inserted into the accommodation space 41b, and the control terminals 23a and 23b are electrically connected to the female contact portion 42d. In this connected state, the corresponding holes 50 and the through holes 44 overlap each other and are in communication with each other. Then, the housing 41 is fixed to the mold resin portion 21 by inserting the fixing pins 45 into the through holes 44 and the holes 50. By adopting, for example, rivets as the fixing pins 45, the fixing pins 45 can be fixed even when the non-through holes 50 are used.

  Thus, also when using the non-through-hole 50, there can exist an effect equivalent to 3rd Embodiment. In particular, in this embodiment, there are three sets of holes 50a and 50b formed at the same position in the plane defined by the X direction and the Y direction. As described above, when the hole 50a opened on the one surface 21a and the hole 50b opened on the back surface 21b are at the same position, the semiconductor device 11 and the female connector 12 are compared with the configuration in which the hole 50 is formed only on one surface. It is possible to further improve the electrical connection reliability of the control terminals 23a and 23b that are more stable in the assembled state and are easily affected by vibrations.

  In the present embodiment, the example in which the holes 50 are formed on both sides of the one surface 21a and the back surface 21b of the mold resin portion 21 has been described. However, a configuration in which the holes 50 are formed on only one side may be employed. In this case, the through hole 44 is also formed in only one of the opposing wall portions 41c.

(Seventh embodiment)
In the present embodiment, description of portions common to the semiconductor module 10 shown in the first embodiment is omitted.

  In the first embodiment, the mold resin portion 21 is uniform throughout the material. In other words, the strength of the mold resin portion 21 is substantially uniform as a whole. On the other hand, the present embodiment is characterized in that the strength of the mold resin portion 21 varies depending on the region. In other words, the construction material is different depending on the region.

  In FIG. 23, the element covered with the mold resin portion 21 is shown in a transparent manner. That is, the covering element is also shown by a solid line for convenience. In the semiconductor device 11 of the present embodiment, the mold resin portion 21 includes a high strength region 51 having higher strength than other regions and a high Tg region 52 having a glass transition point (Tg) higher than that of the high strength region 51. Have. The high-strength region 51 is set so as to include a formation region of the groove portion 38 as a fixed portion. On the other hand, the high Tg region 52 is set including a region for sealing the semiconductor chips 20a and 20b as electronic components. The high intensity region 51 corresponds to a first region described in the claims, and the high Tg region 52 corresponds to a second region.

  The dashed-dotted line shown in FIG. 23 has shown the boundary 53 of the high intensity | strength area | region 51 and the high Tg area | region 52. FIG. The boundary 53 is set between the semiconductor chips 20a and 20b and the groove 38 in the Y direction. In this embodiment, it is set between the heat sinks 25a, 25b, 29a, 29b and the groove portion 38. In the Y direction, the portion on the side surface 21 d side from the boundary 53 is a high strength region 51, and the portion on the side surface 21 c side from the boundary 53 is a high Tg region 52.

  In the present embodiment, the type of material constituting the high strength region 51 and the type of material constituting the high Tg region 52 are the same. However, the ratios of materials (thermosetting resin, organic binder, and inorganic filler) are different. Specifically, the material constituting the high-strength region 51 and the material constituting the high Tg region 52 are different because the amount of the inorganic filler added is different.

  As the amount of inorganic filler added increases, the amount of thermosetting resin per unit volume decreases and the glass transition point decreases. In the high Tg region 52, when the glass transition point is lower than the junction temperature (Tj) of the switching elements formed in the semiconductor chips 20a and 20b, the mold resin portion 21 is softened when the switching elements are in a high load state. There's a problem. For this reason, in the high Tg area | region 52, the addition amount of an inorganic filler is decreased and the glass transition point is raised rather than junction temperature. On the other hand, in the high strength region 51, high strength (bending strength) is required to form a fitting structure with the housing 41 of the female connector 12. Thermosetting resins have lower toughness than thermoplastic resins. For this reason, in the high intensity | strength area | region 51, the addition amount of an inorganic filler is increased and the intensity | strength (bending strength) is raised.

  As described above, since the high-strength region 51 is set including the formation region of the groove portion 38, the fitting structure with the housing 41 of the female connector 12 can be stably formed in the high-strength region 51. For example, cracks and the like are less likely to occur around the groove portion 38 of the mold resin portion 21.

  Further, since the glass transition point of the high Tg region 52 is higher than the glass transition point of the high-strength region 51 that is the other region of the mold resin portion 21, due to the heat generated by the switching elements formed in the semiconductor chips 20a and 20b, Softening of the mold resin portion 21 can be suppressed. That is, the semiconductor chips 20a and 20b can be stably sealed by the mold resin portion 21.

  Such a mold resin portion 21 can be formed by, for example, transfer molding using a double gate. In the example shown in FIG. 24, the first gate 54 is provided on the side corresponding to the side surface 21 d of the mold resin portion 21 in the molding die (not shown) and at a substantially central position in the X direction. The first material 56 is supplied from the first pot 55 to the first gate 54. The first material 56 includes a thermosetting resin, an organic binder, and an inorganic filler, and the amount of the inorganic filler added is larger than that of the second material 59 described later.

  On the other hand, the 2nd gate 57 is the side corresponding to the side surface 21c of the mold resin part 21 among molds, and is provided in the approximate center position in the X direction. The second material 59 is supplied from the second pot 58 to the second gate 57. The second material 59 includes the same type of material as the first material, and the amount of inorganic filler added is smaller than that of the first material 56. Then, by injecting the first material 56 into the mold from the first gate 54 and injecting the second material 59 into the mold from the second gate 57, the semiconductor device 11 described above can be obtained. At this time, control is performed so that the weld surfaces of both materials 56 and 59 are positioned at the boundary 53 described above. 24, as in FIG. 23, elements covered with the materials 56 and 59 are indicated by solid lines.

  Note that the semiconductor device 11 can be obtained even with a single gate by arranging the first material 56 and the second material 59 in two layers in the same pot. For example, when only the first gate 54 shown in FIG. 24 is provided, the upper layer may be the second material 59 and the second material 59 may be injected into the mold first.

  In the present embodiment, an example in which the high-strength region 51 and the high-Tg region 52 are divided according to the addition amount of the inorganic filler while keeping the same material type is shown, but the high-strength region 51 can be changed by changing the material type. And the high Tg region 52. For example, the type of the first material 56 and the second material 59 may be changed for at least one of a thermosetting resin, an organic binder, and an inorganic filler.

  In this embodiment, the example which makes the part which coat | covers the main terminals 22a-22d among the mold resin parts 21 also be a part of the high Tg area | region 52 was shown. However, since the portions covering the main terminals 22a to 22d are not portions for sealing the semiconductor chips 20a and 20b, the material configuration may be different from that of the high Tg region 52. For example, the portion covering the main terminals 22 a to 22 d may be made of the same material as that of the high-strength region 51.

  In this embodiment, although the example which applies the mold resin part 21 from which a material changes with areas to the mold resin part 21 which has the groove part 38 was shown, it is not limited to this. The present invention can also be applied to the mold resin portion 21 having the through hole 39 and the non-through hole 50. In this case, the high strength region 51 is set including the formation region of the through hole 39.

(Eighth embodiment)
In the present embodiment, description of portions common to the semiconductor module 10 shown in the third embodiment is omitted.

  In the third embodiment, a through hole 39 is formed in the mold resin portion 21, and the housing 41 (female connector 12) is a semiconductor by the fixing pin 45 in a state where the through hole 39 and the through hole 44 of the housing 41 communicate with each other. The example fixed to the apparatus 11 was shown. On the other hand, in this embodiment, as shown in FIG. 25, the metal collar 60 is inserted into the mold resin portion 21, and the fixing pin 45 is inserted into the through hole 61 of the metal collar 60. To do.

  The metal collar 60 has a cylindrical shape as shown in FIG. 26, and the through hole 61 in the cylinder functions as a fixing portion that fixes the housing 41 to the semiconductor device 11. The through hole 61 corresponds to a metal collar hole described in the claims. In the present embodiment, the metal collar 60 has a cylindrical shape, and its outer diameter is constant in the Z direction. The outer peripheral surface of the metal collar 60 is subjected to a twill knurling process in order to improve adhesion to the mold resin portion 21. One end of the metal collar 60 is exposed on the one surface 21a, and the other end is exposed on the back surface 21b. Specifically, one end of the metal collar 60 is substantially flush with the one surface 21a, and the other end is substantially flush with the back surface 21b.

  The fixing pin 45 is inserted into the through hole 44 and the hole 50 in a state where the through hole 61 and the through hole 44 formed in the housing 41 overlap and communicate with each other. Thereby, the housing 41 is fixed to the mold resin portion 21. As the fixing pin 45, the one described in the third embodiment can be adopted.

  According to the above configuration, since the fixing pin 45 is fixed to the metal collar 60, the fixing pin 45 is inserted into the through hole 39 of the mold resin portion 21, that is, fixed to the thermosetting resin. Compared to the configuration in which the pin 45 is fixed, the housing 41 of the female connector 12 can be stably fixed.

  A metal collar 60 can be used instead of the non-through hole 50. Further, in the configuration described in the seventh embodiment, the metal collar 60 can be used. In this case, the metal collar 60 is provided in the high strength region 51.

  The metal collar 60 is not limited to the one having the outer circumferential surface subjected to the twill knurling process. What processed the process which improves adhesiveness with the mold resin part 21 was given to the outer peripheral surface, or the thing which makes the shape which improves adhesiveness is preferable. For example, a constricted metal collar 60 in which the central outer diameter sandwiched between both ends is smaller than the outer diameters at both ends in the Z direction may be employed.

(Ninth embodiment)
In the present embodiment, description of portions common to the semiconductor module 10 shown in the first embodiment is omitted.

  In the first embodiment, the groove portion 38 is formed in the mold resin portion 21, and the housing 41 (female connector 12) is fixed to the semiconductor device 11 by the projection portion 43 of the housing 41 engaging with the groove portion 38. showed that. On the other hand, this embodiment is characterized in that a fitting member 62 (lock part) is attached to the mold resin portion 21 and the housing 41 is fixed to the fitting member 62 as shown in FIG. .

  The fitting member 62 is formed by injection molding a material containing a thermoplastic resin. The fitting member 62 has a groove 63 for fixing the housing 41 to the semiconductor device 11. And the fitting member 62 is attached to the recessed part 64 of the mold resin part 21 so that the groove part 63 may be exposed outside. As an attachment method, for example, fitting or adhesion can be employed. In this embodiment, it is inserted by press-fitting. Moreover, the mold resin part 21 has the recessed part 64 in both surfaces of the one surface 21a and the back surface 21b, and the fitting member 62 is engage | inserted by each.

  Thus, in this embodiment, the fitting member 62 made of thermoplastic resin is attached to the concave portion 64 of the mold resin portion 21 made of thermosetting resin, and the protruding portion of the housing 41 is inserted into the groove portion 63 of the fitting member 62. 43 is locked. Accordingly, the fitting structure of the female connector 12 with the housing 41 can be stably formed as compared with the configuration in which the protruding portion 43 is locked to the groove portion 38 of the mold resin portion 21. Moreover, the freedom degree of a fitting shape (shape freedom degree of the groove part 63) can be improved.

(10th Embodiment)
In the present embodiment, description of portions common to the semiconductor module 10 shown in the first embodiment is omitted.

  As shown in FIG. 28, the present embodiment is characterized in that a suspension lead 65 constituting a part of the lead frame 24 is used as a fixing portion.

  As shown in the first embodiment (see FIG. 5), the lead frame 24 includes main terminals 22a to 22d, control terminals 23a and 23b, heat sinks 25a and 25b, and islands 32a and 32b. Furthermore, the lead frame 24 has an outer peripheral frame and a tie bar until it is removed after the molding resin portion 21 is molded. That is, in the state of the semiconductor device 11, the lead frame 24 does not have an outer peripheral frame and a tie bar. The suspension lead 65 is a part for connecting the heat sinks 25a and 25b to the outer peripheral frame. Control terminals 23a and 23b are also connected to the outer peripheral frame to which the suspension leads 65 are connected. Therefore, it can be said that the suspension lead 65 is a portion that connects the heat sinks 25a and 25b to other portions of the lead frame 24 including the control terminals 23a and 23b.

  The suspension leads 65 protrude from the side surface 21d of the mold resin portion 21 to the outside. That is, it protrudes from the same side surface 21d as the control terminals 23a and 23b. And the protrusion part 66 is formed in the protrusion front-end | tip. In the X direction, suspension leads 65 are provided near both ends of the side surface 21d so as to sandwich the control terminals 23a and 23b therebetween. The housing 41 has a recess (not shown) corresponding to the protrusion 66. The protrusion 66 is engaged with the recess of the housing 41 when the semiconductor device 11 and the female connector 12 are fitted. That is, in the present embodiment, the configuration is the reverse of that of the first embodiment. The cross-sectional shape defined by the X direction and the Y direction of the protruding portion 66 is substantially wedge-shaped like the protruding portion 43 described in the first embodiment.

  The suspension lead 65 having such a shape can be formed when the outer peripheral frame and the tie bar are removed (removed) after the molding resin portion 21 is molded.

  As described above, the fixing structure using the protrusion 66 of the suspension lead 65 can also achieve the same effect as that of the first embodiment. Further, since the structure is fixed by the protrusion 66 made of metal, the fitting structure of the female connector 12 with the housing 41 is more stable than the structure in which the groove is formed in the mold resin portion 21 made of thermosetting resin. Can be formed.

  The preferred embodiments of the present invention have been described above. However, the present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the spirit of the present invention.

  The number of control terminals 23a and 23b is not limited to the above example.

  Although an example in which the control terminals 23a and 23b are the first terminals has been shown, the main terminals 22a to 22d may be the first terminals. Both the main terminals 22a to 22d and the control terminals 23a and 23b may be the first terminals.

  The configuration of the semiconductor device 11 is not limited to the above example. Although an example of a 2-in-1 package having upper and lower arms for one phase has been shown, the present invention can also be applied to a 6-in-1 package having upper and lower arms for three phases and a 1-in-1 package having only one arm. As long as it includes at least an electronic component, a mold resin portion that seals the electronic component, and a first terminal that is electrically connected to the electronic component and protrudes to the outside of the mold resin portion. Configuration can be applied.

  Although the heat radiation surfaces 25a1, 25b1, 29a1, 29b1 of the heat sinks 25a, 25b, 29a, 29b are shown as being exposed from the mold resin part 21, the entire heat sinks 25a, 25b, 29a, 29b are formed by the mold resin part 21. The present invention can also be applied to a sealed structure.

  If electrical insulation is unnecessary, the semiconductor device 11 may be configured without the insulating sheet 37. In addition, as described above, the insulating sheet 37 can be omitted even when the heat radiation surfaces 25a1, 25b1, 29a1, and 29b1 are covered with the mold resin portion 21.

  In the locking structure, a protrusion may be formed in the mold resin portion 21 and a groove portion may be formed in the housing 41. However, since it is necessary to form a groove on the wall surface on the accommodation space 41b side, considering moldability, it is preferable to provide the groove 38 in the mold resin portion 21 and the protrusion 43 in the housing 41.

  Although the terminal 40a, 40b showed the example which has flexibility, it is not limited to the flexible terminal 40a, 40b.

  In the example, the heat sinks 25a and 25b are thermally and electrically connected to the corresponding semiconductor chips 20a and 20b. However, the heat sinks 25a and 25b may be at least thermally connected to the corresponding semiconductor chips 20a and 20b.

DESCRIPTION OF SYMBOLS 10 ... Semiconductor module, 11 ... Semiconductor device, 12 ... Female connector, 13 ... Cooler, 14 ... Circuit board, 20a, 20b ... Semiconductor chip, 21 ... Mold resin Part, 21a ... one surface, 21b ... back surface, 21c-21f ... side surface, 22a-22d ... main terminal, 23a, 23b ... control terminal, 24 ... lead frame, 25a, 25b ... Heat sink, 25a1, 25b1 ... Heat dissipation surface, 25b2 ... Protrusion, 26 ... Solder, 27a, 27b ... Terminal, 28 ... Solder, 29a, 29b ... Heat sink, 29a1 , 29b1... Heat dissipation surface, 29a2, 29a3, 29b2... Projection, 30, 31... Solder, 32a, 32b... Island, 33a, 33b. C, 34 ... solder, 35, 36 ... bonding wire, 37 ... insulating sheet, 38 ... groove, 39 ... through hole, 40 ... terminal, 41 ... housing, 41a ... Body part, 41b ... Accommodating space, 41c ... Wall part, 42a ... Internal conductor, 42b ... Coating part, 42c ... Metal collar, 42d ... Female contact part, 43 ... Projection, 44 ... Through hole, 45 ... Fixing pin, 50 ... Hole, 51 ... First region, 52 ... Second region, 53 ... Boundary, 54 ... First gate, 55 ... First Pot, 56 ... first material, 57 ... second gate, 58 ... second pot, 59 ... second material, 60 ... metal collar, 61 ... hole, 62 ... fitting member, 63 ... groove, 64 ... concave, 65 ... Hanging lead, 66 ... Projection

Claims (21)

Electronic components (20a, 20b);
A mold resin portion (21) for sealing the electronic component;
A resin-encapsulated semiconductor device (11) having a first terminal (23a, 23b) for external connection that is electrically connected to the electronic component and protrudes from one surface (21d) of the mold resin portion. A semiconductor module,
The first terminal is electrically connected to the second terminal (40a, 40b) disposed in the housing (41) of the female connector (12),
The mold resin part has a first hole (39, 50) as a fixing part for fixing the housing to the semiconductor device as a part of the mold resin part ,
In a state where the second hole (44), which is a through hole formed in the housing, and the first hole are arranged to communicate with each other, a fixing member (45) is inserted into both the holes so that the housing is the semiconductor. A semiconductor module fixed to an apparatus . In the mold resin portion, the strength of the first region (51) including the fixing portion is a region different from the first region, and is stronger than the strength of the second region (52) for sealing the electronic component. The semiconductor module according to claim 1 , wherein the semiconductor module is raised. Electronic components (20a, 20b);
A mold resin portion (21) for sealing the electronic component;
A resin-encapsulated semiconductor device (11) having a first terminal (23a, 23b) for external connection that is electrically connected to the electronic component and protrudes from one surface (21d) of the mold resin portion. A semiconductor module,
The first terminal is electrically connected to the second terminal (40a, 40b) disposed in the housing (41) of the female connector (12),
The mold resin portion as part of itself have a fixing portion for fixing said housing to said semiconductor device (38, 39), the intensity of the first region including the fixing part (51) is, the A semiconductor module , which is a region different from the first region and is higher than the strength of the second region (52) for sealing the electronic component . The mold resin part has a groove part (38) as the fixing part,
4. The semiconductor module according to claim 3 , wherein the housing is fixed to the semiconductor device by engaging a protrusion (43) formed in the housing with the groove. Electronic components (20a, 20b);
A mold resin portion (21) for sealing the electronic component;
A resin-encapsulated semiconductor device (11) having a first terminal (23a, 23b) for external connection that is electrically connected to the electronic component and protrudes from one surface (21d) of the mold resin portion. A semiconductor module,
The first terminal is electrically connected to the second terminal (40a, 40b) disposed in the housing (41) of the female connector (12),
A metal collar (60) having a hole (61) as a fixing portion for fixing the housing to the semiconductor device is inserted into the mold resin portion,
In a state where the hole and the second hole (44) which is a through hole formed in the housing communicate with each other, a fixing member (45) is inserted into both the holes, and the housing is the semiconductor device. A semiconductor module characterized by being fixed to the board. Electronic components (20a, 20b);
A mold resin portion (21) for sealing the electronic component;
A resin-encapsulated semiconductor device (11) having a first terminal (23a, 23b) for external connection that is electrically connected to the electronic component and protrudes from one surface (21d) of the mold resin portion. A semiconductor module,
The first terminal is electrically connected to the second terminal (40a, 40b) disposed in the housing (41) of the female connector (12),
The mold resin portion has a recess (64), and a fitting member (62) made of thermoplastic resin is attached to the recess,
The fitting member has a groove (63) as a fixing portion for fixing the housing to the semiconductor device,
The semiconductor module is characterized in that the housing is fixed to the semiconductor device by engaging the protrusion (43) formed in the housing with the groove. The semiconductor device has a heat sink (25a, 25b, 29a, 29b) thermally connected to the electronic component,
The surface opposite to the electronic component in the heat sink is a heat radiating surface (25a1, 25b1, 29a1, 29b1) exposed from the mold resin part,
The said fixing | fixed part is formed between the said one surface and the said thermal radiation surface in the extending direction of the said 1st terminal which protrudes from the said one surface, The any one of Claims 1-6 characterized by the above-mentioned. Semiconductor module. Electronic components (20a, 20b);
A mold resin portion (21) for sealing the electronic component;
A resin-encapsulated semiconductor device (11) having a first terminal (23a, 23b) for external connection that is electrically connected to the electronic component and protrudes from one surface (21d) of the mold resin portion. A semiconductor module,
The first terminal is electrically connected to the second terminal (40a, 40b) disposed in the housing (41) of the female connector (12),
The mold resin portion as part of itself have a fixed portion (38, 39) for securing said housing to said semiconductor device,
The semiconductor device has a heat sink (25a, 25b, 29a, 29b) thermally connected to the electronic component,
The surface opposite to the electronic component in the heat sink is a heat radiating surface (25a1, 25b1, 29a1, 29b1) exposed from the mold resin part,
The semiconductor module , wherein the fixing portion is formed between the one surface and the heat radiating surface in the extending direction of the first terminal protruding from the one surface . The mold resin part has a groove part (38) as the fixing part,
9. The semiconductor module according to claim 8 , wherein the housing is fixed to the semiconductor device by engaging a protrusion (43) formed in the housing with the groove. The mold resin part has a first hole (39, 50) as the fixing part,
In a state where the second hole (44), which is a through hole formed in the housing, and the first hole are arranged to communicate with each other, a fixing member (45) is inserted into both the holes so that the housing is the semiconductor. The semiconductor module according to claim 8 , wherein the semiconductor module is fixed to a device. In the mold resin portion, the strength of the first region (51) including the fixing portion is a region different from the first region, and is stronger than the strength of the second region (52) for sealing the electronic component. The semiconductor module according to claim 8 , wherein the semiconductor module is raised. Electronic components (20a, 20b);
A mold resin portion (21) for sealing the electronic component;
A resin-encapsulated semiconductor device (11) having a first terminal (23a, 23b) for external connection that is electrically connected to the electronic component and protrudes from one surface (21d) of the mold resin portion. A semiconductor module,
The first terminal is electrically connected to the second terminal (40a, 40b) disposed in the housing (41) of the female connector (12),
The semiconductor device has a heat sink (25a, 25b) thermally connected to the electronic component,
The first terminal and the heat sink are each configured as part of the same lead frame (24),
The semiconductor device includes a suspension lead (65) configured as a part of the lead frame and connecting the heat sink to another part including the first terminal,
The suspension lead protrudes from the same surface (21d) as the first terminal, and has a protrusion (66) as a fixing portion for fixing the housing to the semiconductor device at the protrusion tip.
The semiconductor module, wherein the protrusion is locked to a recess formed in the housing, whereby the housing is fixed to the semiconductor device. The semiconductor module according to claim 1 , wherein a portion of the second terminal of the female connector that protrudes from the housing has flexibility. A cooler (13) for cooling the semiconductor device;
The second terminal is electrically connected to the circuit board (14);
A plurality of the semiconductor devices;
A plurality of the semiconductor devices and the cooler are alternately stacked,
The semiconductor module according to claim 13 , wherein the circuit board is common to a plurality of the semiconductor devices. A circuit board (14);
A cooler (13) for cooling the semiconductor device and the circuit board,
The semiconductor device and the circuit board are stacked via the cooler,
The semiconductor module according to claim 13 , wherein the second terminal is electrically connected to the circuit board. Electronic components (20a, 20b);
A mold resin portion (21) for sealing the electronic component;
A resin-encapsulated semiconductor device (11) having a first terminal (23a, 23b) for external connection that is electrically connected to the electronic component and protrudes from one surface (21d) of the mold resin portion. A semiconductor module,
The first terminal is electrically connected to the second terminal (40a, 40b) disposed in the housing (41) of the female connector (12),
The mold resin portion as part of itself have a fixed portion (38, 39) for securing said housing to said semiconductor device,
Of the second terminal of the female connector, the portion protruding from the housing has flexibility ,
A circuit board (14), and a cooler (13) for cooling the semiconductor device and the circuit board,
The semiconductor device and the circuit board are stacked via the cooler,
The semiconductor module, wherein the second terminal is electrically connected to the circuit board . Electronic components (20a, 20b);
A mold resin portion (21) for sealing the electronic component;
A resin-encapsulated semiconductor device (11) having a first terminal (23a, 23b) for external connection that is electrically connected to the electronic component and protrudes from one surface (21d) of the mold resin portion. A semiconductor module,
The first terminal is electrically connected to the second terminal (40a, 40b) disposed in the housing (41) of the female connector (12),
A metal collar (60) having a hole (61) as a fixing portion for fixing the housing to the semiconductor device is inserted into the mold resin portion,
In a state where the hole and the second hole (44) which is a through hole formed in the housing communicate with each other, a fixing member (45) is inserted into both the holes, and the housing is the semiconductor device. is fixed to,
Of the second terminal of the female connector, the portion protruding from the housing has flexibility ,
A circuit board (14), and a cooler (13) for cooling the semiconductor device and the circuit board,
The semiconductor device and the circuit board are stacked via the cooler,
The semiconductor module, wherein the second terminal is electrically connected to the circuit board . Electronic components (20a, 20b);
A mold resin portion (21) for sealing the electronic component;
A resin-encapsulated semiconductor device (11) having a first terminal (23a, 23b) for external connection that is electrically connected to the electronic component and protrudes from one surface (21d) of the mold resin portion. A semiconductor module,
The first terminal is electrically connected to the second terminal (40a, 40b) disposed in the housing (41) of the female connector (12),
The mold resin portion has a recess (64), and a fitting member (62) made of thermoplastic resin is attached to the recess,
The fitting member has a groove (63) as a fixing portion for fixing the housing to the semiconductor device,
The housing is fixed to the semiconductor device by locking the protrusion (43) formed on the housing in the groove .
Of the second terminal of the female connector, the portion protruding from the housing has flexibility ,
A circuit board (14), and a cooler (13) for cooling the semiconductor device and the circuit board,
The semiconductor device and the circuit board are stacked via the cooler,
The semiconductor module, wherein the second terminal is electrically connected to the circuit board . Electronic components (20a, 20b);
A mold resin portion (21) for sealing the electronic component;
A resin-encapsulated semiconductor device (11) having a first terminal (23a, 23b) for external connection that is electrically connected to the electronic component and protrudes from one surface (21d) of the mold resin portion. A semiconductor module,
The first terminal is electrically connected to the second terminal (40a, 40b) disposed in the housing (41) of the female connector (12),
The semiconductor device has a heat sink (25a, 25b) thermally connected to the electronic component,
The first terminal and the heat sink are each configured as part of the same lead frame (24),
The semiconductor device includes a suspension lead (65) configured as a part of the lead frame and connecting the heat sink to another part including the first terminal,
The suspension lead protrudes from the same surface (21d) as the first terminal, and has a protrusion (66) as a fixing portion for fixing the housing to the semiconductor device at the protrusion tip.
The protrusion is locked to a recess formed in the housing, so that the housing is fixed to the semiconductor device ,
Of the second terminal of the female connector, the portion protruding from the housing has flexibility ,
A circuit board (14), and a cooler (13) for cooling the semiconductor device and the circuit board,
The semiconductor device and the circuit board are stacked via the cooler,
The semiconductor module, wherein the second terminal is electrically connected to the circuit board . The semiconductor device includes:
While having a semiconductor chip with a switching element formed as the electronic component,
As external connection terminals protruding from the mold resin portion, main terminals (22a to 22d) electrically connected to the main electrode of the switching element, and electrically connected to the control electrode of the switching element, The semiconductor module according to any one of claims 1 to 19 , further comprising a control terminal (23a, 23b) protruding from the one surface as the first terminal. The semiconductor module according to claim 1, comprising the female connector.

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