JP6383818B2 - Led上のパターニングされた感uv性シリコーン−蛍光体層 - Google Patents
Led上のパターニングされた感uv性シリコーン−蛍光体層 Download PDFInfo
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- JP6383818B2 JP6383818B2 JP2017008274A JP2017008274A JP6383818B2 JP 6383818 B2 JP6383818 B2 JP 6383818B2 JP 2017008274 A JP2017008274 A JP 2017008274A JP 2017008274 A JP2017008274 A JP 2017008274A JP 6383818 B2 JP6383818 B2 JP 6383818B2
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- 238000000149 argon plasma sintering Methods 0.000 claims description 3
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- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 206010073306 Exposure to radiation Diseases 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- GEIAQOFPUVMAGM-UHFFFAOYSA-N ZrO Inorganic materials [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
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- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
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- 229920001187 thermosetting polymer Polymers 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Description
Claims (11)
- 発光ダイオード(LED)構造を製造する方法であって:
サブマウントタイル上に複数のLEDダイを配設する工程であり、各LEDダイは複数の半導体層を有し、各LEDダイは頂部発光面を有する、工程;
感UV性シリコーンの事前形成シートを用意する工程;
前記LEDダイと前記LEDダイ間の前記タイルの表面との上に前記事前形成シートをラミネートすることに先立って、前記LEDダイ上で前記事前形成シートの目標厚さを維持する硬さを達成するため、前記事前形成シートをプレキュアする工程;
前記LEDダイと前記LEDダイ間の前記タイルの表面との上に前記事前形成シートをラミネートする工程;
マスクを用いて前記事前形成シートをマスキングする工程;
前記マスクを通して選択的に前記事前形成シートをUV放射線に曝すことで、溶剤を用いて前記事前形成シートが現像された後に残存することになる架橋結合された物質を前記事前形成シート内に作り出す工程;及び
前記溶剤を用いて前記事前形成シートの一部を分解することで、前記LEDダイの前記発光面の少なくとも一部の上に前記感UV性シリコーンを残存させるが、前記タイルの表面の少なくとも一部の上の前記感UV性シリコーンを除去する工程;
を有する方法。 - 前記感UV性シリコーンは実質的に、UV放射線に曝された後に前記溶剤によって分解可能でない、請求項1に記載の方法。
- 前記感UV性シリコーンは、前記溶剤を用いて前記事前形成シートの一部を分解した後、前記LEDダイをコンフォーマルに覆っている、請求項1に記載の方法。
- 前記感UV性シリコーンは、前記溶剤を用いて前記事前形成シートの一部を分解した後、前記LEDダイの前記頂部発光面と前記LEDダイの側面とをコンフォーマルに覆っている、請求項1に記載の方法。
- 前記感UV性シリコーンは、前記溶剤を用いて前記事前形成シートの一部を分解した後、前記LEDダイの前記頂部発光面の少なくとも一部の上に残存し、且つ前記LEDダイのワイヤボンド電極を露出させている、請求項1に記載の方法。
- 前記感UV性シリコーンの前記事前形成シートを用意する工程は:
支持フィルムを用意し;
前記支持フィルムの上に液体層として前記感UV性シリコーンを付与し;
液体より硬い状態まで前記感UV性シリコーンを乾燥させ;
前記感UV性シリコーンを保護フィルムでラミネートする;
ことを有し、
当該方法は更に:
前記事前形成シートをプレキュアするのに先立って、前記保護フィルムを除去する工程;及び
前記事前形成シートをラミネートした後に、前記支持フィルムを除去する;
ことを有する、請求項1に記載の方法。 - 前記感UV性シリコーンは波長変換材料を注入されている、請求項1に記載の方法。
- 前記波長変換材料は蛍光体である、請求項7に記載の方法。
- 前記感UV性シリコーンは光散乱粒子を含んでいる、請求項1に記載の方法。
- 前記タイルは、前記LEDダイの周囲の少なくとも一部を囲んで反射面を有し、前記タイルの表面の少なくとも一部の上の前記感UV性シリコーンを除去する工程は、前記反射面の部分の上の前記感UV性シリコーンを除去することを有する、請求項1に記載の方法。
- 前記タイルを個片化する工程、を更に有する請求項1に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201161467426P | 2011-03-25 | 2011-03-25 | |
US61/467,426 | 2011-03-25 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014500520A Division JP2014509089A (ja) | 2011-03-25 | 2012-03-20 | Led上のパターニングされた感uv性シリコーン−蛍光体層 |
Publications (2)
Publication Number | Publication Date |
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JP2017085160A JP2017085160A (ja) | 2017-05-18 |
JP6383818B2 true JP6383818B2 (ja) | 2018-08-29 |
Family
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Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
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JP2014500520A Pending JP2014509089A (ja) | 2011-03-25 | 2012-03-20 | Led上のパターニングされた感uv性シリコーン−蛍光体層 |
JP2017008274A Active JP6383818B2 (ja) | 2011-03-25 | 2017-01-20 | Led上のパターニングされた感uv性シリコーン−蛍光体層 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
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JP2014500520A Pending JP2014509089A (ja) | 2011-03-25 | 2012-03-20 | Led上のパターニングされた感uv性シリコーン−蛍光体層 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20140008685A1 (ja) |
EP (1) | EP2689458B8 (ja) |
JP (2) | JP2014509089A (ja) |
KR (1) | KR20140022031A (ja) |
CN (1) | CN103503136A (ja) |
TW (1) | TWI603153B (ja) |
WO (1) | WO2012131532A1 (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2015089535A1 (de) * | 2013-12-20 | 2015-06-25 | Zumtobel Lighting Gmbh | Optisches element für eine lichtquelle |
CN103972368B (zh) * | 2014-05-23 | 2016-09-14 | 重庆大学 | 一种基于光刻技术的led荧光粉的图形化方法 |
DE102014107473A1 (de) * | 2014-05-27 | 2015-12-03 | Osram Opto Semiconductors Gmbh | Konverterelement zur Konvertierung einer Wellenlänge, optoelektronisches Bauelement mit Konverterelement und Verfahren zum Herstellen eines Konverterelements |
WO2017078368A1 (ko) * | 2015-11-05 | 2017-05-11 | 서울바이오시스주식회사 | 자외선 발광 소자 및 그것을 제조하는 방법 |
TW201911610A (zh) | 2017-07-27 | 2019-03-16 | 美商羅門哈斯電子材料有限公司 | 聚矽氧組合物及控制光之物件 |
DE102017119872A1 (de) * | 2017-08-30 | 2019-02-28 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen eines optoelektronischen Halbleiterbauteils und optoelektronisches Halbleiterbauteil |
JP6978690B2 (ja) | 2018-05-25 | 2021-12-08 | 日亜化学工業株式会社 | 透光性部材の形成方法および発光装置の製造方法、ならびに、発光装置 |
KR102125837B1 (ko) * | 2018-08-30 | 2020-06-23 | (주)라이타이저 | 광확산형 색변환 다이오드 및 이의 제조방법 |
US11670740B2 (en) * | 2019-09-26 | 2023-06-06 | Osram Opto Semiconductors Gmbh | Conversion layer, light emitting device and method of producing a conversion layer |
TWI710129B (zh) * | 2020-02-10 | 2020-11-11 | 台灣愛司帝科技股份有限公司 | 發光二極體晶片封裝結構及其製作方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000208822A (ja) * | 1999-01-11 | 2000-07-28 | Matsushita Electronics Industry Corp | 半導体発光装置 |
US6650044B1 (en) * | 2000-10-13 | 2003-11-18 | Lumileds Lighting U.S., Llc | Stenciling phosphor layers on light emitting diodes |
EP1753035A4 (en) * | 2004-04-28 | 2011-12-21 | Panasonic Corp | LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME |
US7344952B2 (en) * | 2005-10-28 | 2008-03-18 | Philips Lumileds Lighting Company, Llc | Laminating encapsulant film containing phosphor over LEDs |
JP2007294890A (ja) * | 2006-03-31 | 2007-11-08 | Toshiba Lighting & Technology Corp | 発光装置 |
US7858198B2 (en) * | 2007-04-10 | 2010-12-28 | Shin-Etsu Chemical Co., Ltd. | Phosphor-containing adhesive silicone composition, composition sheet formed of the composition, and method of producing light emitting device using the sheet |
KR100980115B1 (ko) * | 2008-01-07 | 2010-09-07 | 서울대학교산학협력단 | 발광 다이오드 코팅 방법 |
JP5324114B2 (ja) * | 2008-03-27 | 2013-10-23 | リンテック株式会社 | 発光モジュール用シートの製造方法、発光モジュール用シート |
US20110031516A1 (en) * | 2009-08-07 | 2011-02-10 | Koninklijke Philips Electronics N.V. | Led with silicone layer and laminated remote phosphor layer |
-
2012
- 2012-03-20 CN CN201280014852.5A patent/CN103503136A/zh active Pending
- 2012-03-20 JP JP2014500520A patent/JP2014509089A/ja active Pending
- 2012-03-20 KR KR1020137028132A patent/KR20140022031A/ko not_active Application Discontinuation
- 2012-03-20 US US14/004,434 patent/US20140008685A1/en not_active Abandoned
- 2012-03-20 EP EP12714374.1A patent/EP2689458B8/en active Active
- 2012-03-20 WO PCT/IB2012/051320 patent/WO2012131532A1/en active Application Filing
- 2012-03-23 TW TW101110262A patent/TWI603153B/zh active
-
2017
- 2017-01-20 JP JP2017008274A patent/JP6383818B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
TW201239539A (en) | 2012-10-01 |
EP2689458A1 (en) | 2014-01-29 |
KR20140022031A (ko) | 2014-02-21 |
WO2012131532A1 (en) | 2012-10-04 |
EP2689458B1 (en) | 2018-01-10 |
JP2014509089A (ja) | 2014-04-10 |
US20140008685A1 (en) | 2014-01-09 |
JP2017085160A (ja) | 2017-05-18 |
EP2689458B8 (en) | 2018-08-29 |
TWI603153B (zh) | 2017-10-21 |
CN103503136A (zh) | 2014-01-08 |
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