JP6380973B2 - 光学式センサ - Google Patents
光学式センサ Download PDFInfo
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- JP6380973B2 JP6380973B2 JP2014123270A JP2014123270A JP6380973B2 JP 6380973 B2 JP6380973 B2 JP 6380973B2 JP 2014123270 A JP2014123270 A JP 2014123270A JP 2014123270 A JP2014123270 A JP 2014123270A JP 6380973 B2 JP6380973 B2 JP 6380973B2
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
- H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/26—Optical coupling means
- G02B6/35—Optical coupling means having switching means
- G02B6/351—Optical coupling means having switching means involving stationary waveguides with moving interposed optical elements
- G02B6/353—Optical coupling means having switching means involving stationary waveguides with moving interposed optical elements the optical element being a shutter, baffle, beam dump or opaque element
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02322—Optical elements or arrangements associated with the device comprising luminescent members, e.g. fluorescent sheets upon the device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/26—Optical coupling means
- G02B6/262—Optical details of coupling light into, or out of, or between fibre ends, e.g. special fibre end shapes or associated optical elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/26—Optical coupling means
- G02B6/34—Optical coupling means utilising prism or grating
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
- Geophysics And Detection Of Objects (AREA)
- Optical Couplings Of Light Guides (AREA)
Description
脂肪鎖変性エポキシ樹脂(DIC社製、EPICLON EXA-4816)80重量部、脂環式エポキシ樹脂(ダイセル社製、EHPE3150)20重量部、光酸発生剤(アデカ社製、SP170)2重量部、乳酸エチル(武蔵野化学研究所社製、溶剤)40重量部を混合することにより、アンダークラッド層およびオーバークラッド層の形成材料を調製した。
o−クレゾールノボラックグリシジルエーテル(新日鉄住金化学社製、YDCN−700−10)50重量部、ビスフェノキシエタノールフルオレンジグリシジルエーテル(大阪ガスケミカル社製、OGSOLEG)50重量部、光酸発生剤(アデカ社製、SP170)1重量部、乳酸エチル(武蔵野化学研究所社製、溶剤)15重量部を混合することにより、コアの形成材料を調製した。
上記形成材料を用い、厚み25μmの帯状(幅0.1mm)のアンダークラッド層の表面の中央に、その長手方向に沿って、厚み50μmの帯状(幅50μm)のコアを1本形成し、このコアを被覆するように、上記アンダークラッド層の表面に、オーバークラッド層(コアの上面からの厚み25μm、幅0.1mm)を形成した。これにより、厚み0.1mm、幅0.1mmの線状の第1および第2光導波路を得た。
発光素子として、ULM Photonics社製のULM850-05-TT-C0101G を準備し、第1電気基板に実装した。この発光素子の寸法は、第1電気基板を含めて、幅W0が1.0mm、厚みT0が0.3mmであった。また、受光素子として、京セミ社製のKPDG006HA1を準備し、第2電気基板に実装した。この受光素子の寸法は、第2電気基板を含めて、幅W0が1.0mm、厚みT0が0.35mmであった(図12,図13参照)。
〔光学式センサ〕
上記第1および第2光導波路,発光素子および受光素子を用い、図1(a),(b)に示す光学式センサを作製した。なお、固定部材は、合成樹脂製とした。
〔光学式センサ〕
上記参考例1と同様にして、図4に示す光学式センサを作製した。
〔光学式センサ〕
上記参考例1と同様にして、図5に示す光学式センサを作製した。
〔光学式センサ〕
上記参考例1と同様にして、図8に示す光学式センサを作製した。
図12に示す従来の光学式センサを準備した。
図13に示す従来の光学式センサを準備した。
上記参考例1〜4および従来例1,2の光学式センサにおける固定部材の寸法を測定した。その結果、参考例1の固定部材の厚みTは0.5mm、参考例2の、各光導波路の先端部を固定する固定部材の部分の幅Wは0.35mm、参考例3の、両光導波路の先端部を固定する固定部材の部分の幅Wは0.7mm、参考例4の、両光導波路の先端部を固定する固定部材の部分の厚みTは0.35mmであった。また、従来例1の、各素子を固定する固定部材の部分の幅W1は0.53mm、厚みT1は1.6mm、従来例2の、両素子を固定する固定部材の部分の幅W2は3.05mm、厚みT2は1.0mmであった。
S 空間
1 第1光導波路
2 第2光導波路
3 発光素子
4 受光素子
Claims (1)
- 機器に設置され、発光素子と、この発光素子で発光された光を空間を経て受光する受光素子とを備え、上記空間に存在する被検知物を、その被検知物に当った上記光の変化によって検知する光学式センサであって、上記発光素子に、線状の光導波路が光伝播可能に接続され、その光導波路の長手方向の中間部に、切削部が形成され、その切削部は、上記光導波路の長手方向に対して直角な面と、その直角な面より、上記発光素子からの光の伝播方向側に形成された、上記光導波路の長手方向に対して45°の傾斜面とを有し、上記切削部に対応する上記光導波路の部分に、受光素子が光伝播可能に接続され、上記光導波路の先端部が、上記発光素子で発光された光を出射する光出射部に形成されているとともに、上記光導波路の光出射部から出射された光を、空間に存在する上記被検知物からの反射を経て入射する光入射部に形成され、上記発光素子からの光は、上記切削部の直角な面と傾斜面とをこの順に通過して、上記光導波路の先端面から出射し、その先端面に入射した光は、上記切削部の傾斜面で光路を変換して、上記受光素子で受光されるようになっていることを特徴とする光学式センサ。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014123270A JP6380973B2 (ja) | 2014-06-16 | 2014-06-16 | 光学式センサ |
PCT/JP2015/065866 WO2015194360A1 (ja) | 2014-06-16 | 2015-06-02 | 光学式センサ |
US15/315,892 US10446709B2 (en) | 2014-06-16 | 2015-06-02 | Optical sensor |
TW104117799A TWI673511B (zh) | 2014-06-16 | 2015-06-02 | 光學式感測器 |
CN201580031976.8A CN106463569B (zh) | 2014-06-16 | 2015-06-02 | 光学传感器 |
KR1020167035016A KR20170017923A (ko) | 2014-06-16 | 2015-06-02 | 광학식 센서 |
Applications Claiming Priority (1)
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JP2014123270A JP6380973B2 (ja) | 2014-06-16 | 2014-06-16 | 光学式センサ |
Publications (2)
Publication Number | Publication Date |
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JP2016004859A JP2016004859A (ja) | 2016-01-12 |
JP6380973B2 true JP6380973B2 (ja) | 2018-08-29 |
Family
ID=54935351
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JP2014123270A Active JP6380973B2 (ja) | 2014-06-16 | 2014-06-16 | 光学式センサ |
Country Status (6)
Country | Link |
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US (1) | US10446709B2 (ja) |
JP (1) | JP6380973B2 (ja) |
KR (1) | KR20170017923A (ja) |
CN (1) | CN106463569B (ja) |
TW (1) | TWI673511B (ja) |
WO (1) | WO2015194360A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP6369936B2 (ja) * | 2014-07-31 | 2018-08-08 | 日東電工株式会社 | 光センサ |
JP2021120994A (ja) * | 2020-01-30 | 2021-08-19 | 株式会社キーエンス | 光検出ユニット |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5999464U (ja) * | 1982-12-23 | 1984-07-05 | 日本電気ホームエレクトロニクス株式会社 | フオトインタラプタ |
US4599711A (en) * | 1984-10-29 | 1986-07-08 | The United States Of America As Represented By The Secretary Of The Navy | Multi-lever miniature fiber optic transducer |
JPH03200105A (ja) * | 1989-12-28 | 1991-09-02 | Hitachi Cable Ltd | 光導波路型物体検知センサ |
CH683870A5 (fr) * | 1991-01-22 | 1994-05-31 | Tesa Sa | Capteur optoélectronique de mesure de grandeurs linéaires. |
JPH06177419A (ja) * | 1992-12-07 | 1994-06-24 | Hitachi Ltd | 光icを用いたon/off検出器 |
KR100236432B1 (ko) * | 1996-07-31 | 1999-12-15 | 미야즈 쥰이치로 | 광학 편광기, 이의 제조 방법 및 광학 편광기 제조용 블레이드 |
JP4246855B2 (ja) * | 1999-07-06 | 2009-04-02 | シチズン電子株式会社 | 反射型光センサとその製造方法 |
JP2001308372A (ja) | 2000-04-18 | 2001-11-02 | Citizen Electronics Co Ltd | 反射型光センサ |
US20030034491A1 (en) * | 2001-08-14 | 2003-02-20 | Motorola, Inc. | Structure and method for fabricating semiconductor structures and devices for detecting an object |
JP2003222761A (ja) * | 2002-01-28 | 2003-08-08 | Matsushita Electric Ind Co Ltd | 光送受信モジュール及びその製造方法 |
JP4289053B2 (ja) * | 2003-07-17 | 2009-07-01 | 日立電線株式会社 | パラレル光トランシーバ |
JP2005043638A (ja) * | 2003-07-22 | 2005-02-17 | Matsushita Electric Ind Co Ltd | 双方向光モジュール及びこれにより一芯双方向光通信を行う装置並びに一芯双方向光伝送システム |
JP2005064140A (ja) | 2003-08-08 | 2005-03-10 | Toshiba Corp | フォトインタラプタ及びその製造方法 |
JP4349978B2 (ja) | 2004-06-17 | 2009-10-21 | シチズン電子株式会社 | 光半導体パッケージ及びその製造方法 |
JP2006017885A (ja) * | 2004-06-30 | 2006-01-19 | Fuji Xerox Co Ltd | 導波路フィルム型光モジュール、光導波路フィルム及びその製造方法 |
JP2007171488A (ja) * | 2005-12-21 | 2007-07-05 | Fuji Xerox Co Ltd | 双方向通信用光導波路及び光送受信器 |
JP2008020509A (ja) * | 2006-07-11 | 2008-01-31 | Yamatake Corp | ファイバユニット及びファイバユニットの組立方法 |
JP4692424B2 (ja) * | 2006-07-13 | 2011-06-01 | 富士ゼロックス株式会社 | 多芯双方向通信用導波路アレイ及びその製造方法、並びに双方向通信モジュール |
JP5575355B2 (ja) * | 2006-10-06 | 2014-08-20 | 株式会社 資生堂 | 紫外線防御効果の評価装置 |
KR101360294B1 (ko) | 2008-05-21 | 2014-02-11 | 광주과학기술원 | 반사형 광학 센서장치 |
JP5147646B2 (ja) * | 2008-10-31 | 2013-02-20 | 新光電気工業株式会社 | 光導波路の製造方法 |
JP5463854B2 (ja) * | 2009-10-29 | 2014-04-09 | 株式会社Jvcケンウッド | タッチパネル |
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US20170133544A1 (en) | 2017-05-11 |
CN106463569B (zh) | 2019-05-07 |
TWI673511B (zh) | 2019-10-01 |
WO2015194360A1 (ja) | 2015-12-23 |
KR20170017923A (ko) | 2017-02-15 |
US10446709B2 (en) | 2019-10-15 |
TW201602622A (zh) | 2016-01-16 |
CN106463569A (zh) | 2017-02-22 |
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