JP6376697B2 - 光発生装置および光発生方法 - Google Patents
光発生装置および光発生方法 Download PDFInfo
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
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- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3407—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers characterised by special barrier layers
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Description
[1.光発生装置の構成]
図1を参照して、本実施形態の光発生装置の構成について説明する。同図に示されるように、光発生装置100は、ポンプレーザ1と共振器2と注入同期レーザ3とを備えている。光発生装置100は、これらの構成によってコヒーレントな出力光を発生する装置である。
図11を参照して、光発生装置の更なる実施形態の構成について説明する。第1の実施形態では、位相安定化部として注入同期レーザ3を設けていたが、第2の実施形態では、位相安定化部として光学的PLL(Phase−locked loop)30を設けた例を説明する。
図15を参照して、光発生装置の更なる実施形態について説明する。第1および第2の実施形態では、位相安定化部として注入同期レーザ3や光学的PLL30を設けていたが、第3の実施形態では、位相安定化部として、上記のような光学的手段ではなく、共振器長制御部40およびPZT(piezoelectric transducer)44を設けた例を説明する。
共振器を構成する励起子ポラリトン構造体に電極を設け、この電極から量子井戸QW(QW1〜QW4)に対して、電子及び正孔を注入(換言すれば、励起子を電気注入)することで、励起子を生成する光発生装置の構成を説明する。
第1の実施形態において、図19に示すように共振器2表面において金属膜(metal mask)80をさらに配置してもよい。この金属膜80により、ポラリトンが存在する領域を限定された領域内に制限することが可能となり、相互作用を増大することができる。
以上、本発明に係る光発生装置の実行する光発生方法は、両端部に配された一対の反射鏡DBRtおよび反射鏡DBRbと、反射鏡DBRtおよび反射鏡DBRbに挟まれた量子井戸部QW1〜QW4とを備え、量子井戸部QW1〜QW4において励起子ポラリトン凝縮体を形成可能な共振器2の量子井戸部QW1〜QW4内に励起子を生成する段階と、共振器2から出力される出力光の位相を安定化させる段階とを備えるものである。
Claims (9)
- 両端部に配された一対のミラー部と、当該一対のミラー部に挟まれた量子井戸部とを備え、当該量子井戸部において励起子と光子とが強結合しポラリトンが形成され、励起子ポラリトン凝縮体を形成可能な共振器と、
前記量子井戸部内に励起子を生成する励起部と、
前記共振器から出力される出力光の位相にポラリトン同士の相互作用による特殊な分布が形成されることにより、ウィグナー関数の値が負となる光を発するように、出力光の位相を安定化させる位相安定化部とを備えた光発生装置。 - 前記励起部は、前記共振器に対しポンピング光を照射する光源である請求項1に記載の光発生装置。
- 前記励起部は、前記共振器の量子井戸部に対し電極から電子及び正孔を注入する電気注入部である請求項1に記載の光発生装置。
- 前記位相安定化部は、注入同期レーザ光を前記共振器に照射する注入同期レーザである請求項1乃至3のいずれか1項に記載の光発生装置。
- 前記位相安定化部は、前記共振器から出力される出力光の位相を検出し、検出された出力光の位相に前記注入同期レーザ光の位相を同期させる請求項4に記載の光発生装置。
- 前記位相安定化部は、前記共振器から出力される出力光の位相を検出し、検出された出力光の位相に応じて、前記共振器の共振器長を調整する請求項1乃至3のいずれか1項に記載の光発生装置。
- 前記ミラー部は、誘電体多層膜反射鏡である請求項1乃至6のいずれか1項に記載の光発生装置。
- 前記共振器の出力光を出射する端面において、出力光を出射する領域の周囲に金属膜を配置した請求項1乃至6のいずれか1項に記載の光発生装置。
- 両端部に配された一対のミラー部と、当該一対のミラー部に挟まれた量子井戸部とを備え、当該量子井戸部において励起子と光子とが強結合しポラリトンが形成され、励起子ポラリトン凝縮体を形成可能な共振器の前記量子井戸部内に励起子を生成する段階と、
前記共振器から出力される出力光の位相にポラリトン同士の相互作用による特殊な分布が形成されることにより、ウィグナー関数の値が負となる光を発するように、出力光の位相を安定化させる段階とを備えた光発生方法。
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PCT/JP2013/078722 WO2014065332A1 (ja) | 2012-10-26 | 2013-10-23 | 光発生装置および光発生方法 |
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JP2017037961A (ja) * | 2015-08-10 | 2017-02-16 | 日本電信電話株式会社 | 多波長半導体レーザ |
CN106254065B (zh) * | 2016-08-01 | 2019-08-27 | 中国科学技术大学 | 基于注入锁定技术的量子密钥分发光源 |
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US5877509A (en) * | 1997-11-14 | 1999-03-02 | Stanford University | Quantum well exciton-polariton light emitting diode |
US6538748B1 (en) * | 2000-04-14 | 2003-03-25 | Agilent Technologies, Inc | Tunable Fabry-Perot filters and lasers utilizing feedback to reduce frequency noise |
JP4803992B2 (ja) * | 2004-06-02 | 2011-10-26 | 株式会社リコー | 発光装置および光伝送システムおよび垂直共振器型面発光半導体レーザ素子 |
JP2006216722A (ja) * | 2005-02-02 | 2006-08-17 | Tokyo Institute Of Technology | 変調器集積面発光レーザ |
DE102005056949B4 (de) * | 2005-09-30 | 2013-08-22 | Osram Opto Semiconductors Gmbh | Optisch gepumpter oberflächenemittierender Halbleiterlaser und optische Projektionsvorrichtung mit solch einem Halbleiterlaser |
WO2009134456A1 (en) * | 2008-05-02 | 2009-11-05 | Corning Incorporated | Spectrally and spatially mismatched seeding of a multimode vcsel for modulation bandwidth enhancement |
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