JP6361935B2 - 太陽電池モジュールおよび太陽電池モジュールの製造方法 - Google Patents
太陽電池モジュールおよび太陽電池モジュールの製造方法 Download PDFInfo
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- JP6361935B2 JP6361935B2 JP2015538850A JP2015538850A JP6361935B2 JP 6361935 B2 JP6361935 B2 JP 6361935B2 JP 2015538850 A JP2015538850 A JP 2015538850A JP 2015538850 A JP2015538850 A JP 2015538850A JP 6361935 B2 JP6361935 B2 JP 6361935B2
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- 229920005989 resin Polymers 0.000 description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
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- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
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- 239000003822 epoxy resin Substances 0.000 description 1
- -1 for example Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 230000009545 invasion Effects 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Manufacturing & Machinery (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Description
外周が複数の辺74で囲まれる表面を有する太陽電池素子70と、太陽電池素子70を封止する封止層42,44と、光拡散性を有する塗料62と、を準備し、
表面の外周領域C1に対応したパターンを有する印刷版80であって、複数の辺74のうち、互いに交差する方向に延びる二辺の間に位置するコーナ部76に対応する位置に保護部材が設けられる印刷版80を介して、外周領域C1に塗料62eを塗布し、
塗料62eが印刷された太陽電池素子70を封止層42,44で封止する。
外周が複数の辺74で囲まれる表面を有する太陽電池素子70と、
表面の外周領域C1に設けられる光拡散部60と、
表面および光拡散部60の上を覆う封止層42,44と、
を備え、
光拡散部60は、複数の辺74のうち、互いに交差する方向に延びる二辺の間に位置するコーナ部76を避けて設けられる。
光拡散部60は、隅切りされたコーナ部76を避けて、辺74に沿った領域に設けられてもよい。
Claims (5)
- 外周が複数の辺で囲まれる表面を有する太陽電池素子と、前記太陽電池素子を封止する封止層と、光拡散性を有する塗料と、を準備し、
前記表面の外周領域に対応したパターンを有する印刷版であって、前記複数の辺のうち、互いに交差する方向に延びる二辺の間に位置するコーナ部に対応する位置に保護部材が設けられる印刷版を介して、前記外周領域に前記塗料を塗布し、
前記塗料が印刷された前記太陽電池素子を前記封止層で封止する太陽電池モジュールの製造方法。 - スクリーン印刷により前記塗料を塗布する請求項1に記載の太陽電池モジュールの製造方法。
- 外周が複数の辺で囲まれる表面を有する太陽電池素子と、
前記表面の外周領域に設けられる光拡散部と、
前記表面および前記光拡散部の上を覆う封止層と、
を備え、
前記光拡散部は、前記複数の辺のうち、互いに交差する方向に延びる二辺の間に位置するコーナ部を避けて設けられる太陽電池モジュール。 - 前記表面は、四つの前記辺で囲まれる矩形状の四隅を隅切りした八角形の形状を有し、
前記光拡散部は、隅切りされた前記コーナ部を避けて、前記辺に沿った領域に設けられる請求項3に記載の太陽電池モジュール。 - 前記光拡散部は、前記コーナ部の一部領域を避けて設けられる請求項3または4に記載の太陽電池モジュール。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013204127 | 2013-09-30 | ||
JP2013204127 | 2013-09-30 | ||
PCT/JP2014/003954 WO2015045243A1 (ja) | 2013-09-30 | 2014-07-28 | 太陽電池モジュールおよび太陽電池モジュールの製造方法 |
Publications (2)
Publication Number | Publication Date |
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JPWO2015045243A1 JPWO2015045243A1 (ja) | 2017-03-09 |
JP6361935B2 true JP6361935B2 (ja) | 2018-07-25 |
Family
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JP2015538850A Expired - Fee Related JP6361935B2 (ja) | 2013-09-30 | 2014-07-28 | 太陽電池モジュールおよび太陽電池モジュールの製造方法 |
Country Status (4)
Country | Link |
---|---|
US (2) | US9991404B2 (ja) |
JP (1) | JP6361935B2 (ja) |
DE (1) | DE112014004490T5 (ja) |
WO (1) | WO2015045243A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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USD839180S1 (en) * | 2017-10-31 | 2019-01-29 | Flex Ltd. | Busbar-less solar cell |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4062698A (en) * | 1976-11-03 | 1977-12-13 | International Business Machines Corporation | Photoelectrical converter |
US4321417A (en) * | 1978-06-30 | 1982-03-23 | Exxon Research & Engineering Co. | Solar cell modules |
JPS5712567A (en) * | 1980-06-02 | 1982-01-22 | Exxon Research Engineering Co | Solar battery module and method of increasing power of same |
JPS61226972A (ja) * | 1985-04-01 | 1986-10-08 | Hitachi Ltd | 光電変換装置 |
DE69330425T2 (de) * | 1992-11-27 | 2001-10-25 | Yasuhiro Koike | Geraet zur fuehrung gestreuten lichtes |
JPH09260696A (ja) * | 1996-03-19 | 1997-10-03 | Daido Hoxan Inc | 太陽電池 |
JP2003037281A (ja) | 2001-05-17 | 2003-02-07 | Canon Inc | 被覆材及び光起電力素子 |
JP4368151B2 (ja) * | 2003-06-27 | 2009-11-18 | 三洋電機株式会社 | 太陽電池モジュール |
CN102132420A (zh) * | 2008-08-22 | 2011-07-20 | 三洋电机株式会社 | 太阳能电池模块、太阳能电池和太阳能电池模块的制造方法 |
TWI430462B (zh) * | 2008-12-12 | 2014-03-11 | Ind Tech Res Inst | 封裝材料、矽晶太陽光電模組及薄膜太陽光電模組 |
JP5147754B2 (ja) | 2009-02-19 | 2013-02-20 | 三洋電機株式会社 | 太陽電池モジュール |
JP5842166B2 (ja) * | 2010-06-25 | 2016-01-13 | パナソニックIpマネジメント株式会社 | 太陽電池モジュールおよび太陽電池モジュールの製造方法 |
JP2012069566A (ja) * | 2010-09-21 | 2012-04-05 | Mitsubishi Electric Corp | 薄膜太陽電池の製造方法 |
JP5643620B2 (ja) * | 2010-11-29 | 2014-12-17 | デクセリアルズ株式会社 | 太陽電池モジュール及び太陽電池モジュールの製造方法 |
-
2014
- 2014-07-28 WO PCT/JP2014/003954 patent/WO2015045243A1/ja active Application Filing
- 2014-07-28 DE DE112014004490.3T patent/DE112014004490T5/de not_active Withdrawn
- 2014-07-28 JP JP2015538850A patent/JP6361935B2/ja not_active Expired - Fee Related
-
2016
- 2016-03-08 US US15/064,164 patent/US9991404B2/en not_active Expired - Fee Related
-
2018
- 2018-05-03 US US15/970,592 patent/US10700224B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20180254358A1 (en) | 2018-09-06 |
WO2015045243A1 (ja) | 2015-04-02 |
JPWO2015045243A1 (ja) | 2017-03-09 |
US10700224B2 (en) | 2020-06-30 |
US9991404B2 (en) | 2018-06-05 |
DE112014004490T5 (de) | 2016-09-01 |
US20160190356A1 (en) | 2016-06-30 |
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