JP6355608B2 - 統合されたスタック状の4接合太陽電池 - Google Patents
統合されたスタック状の4接合太陽電池 Download PDFInfo
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- 150000001875 compounds Chemical class 0.000 claims description 40
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 17
- 239000004065 semiconductor Substances 0.000 claims description 17
- 230000003287 optical effect Effects 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 5
- 229910052698 phosphorus Inorganic materials 0.000 claims description 5
- 239000011574 phosphorus Substances 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 4
- 229910021478 group 5 element Inorganic materials 0.000 claims description 4
- 150000002736 metal compounds Chemical class 0.000 claims description 4
- -1 InP compound Chemical class 0.000 claims description 3
- 239000006059 cover glass Substances 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 103
- 230000005855 radiation Effects 0.000 description 7
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Description
Claims (22)
- 第1の格子定数(a1)と第1のバンドギャップエネルギ(Eg1)とを有するInGaP化合物からなる層(S1)を有し、該層(S1)の厚さは100nmより大きく、該層(S1)はエミッタの一部としてかつ/又はベースの一部としてかつ/又はエミッタとベースとの間に位置する空間電荷領域の一部として形成されている第1のサブセル(SC1)と、
第2の格子定数(a2)と第2のバンドギャップエネルギ(Eg2)とを有するInmPn化合物からなる層(S2)を有し、該層(S2)の厚さは100nmより大きく、該層(S2)はエミッタの一部としてかつ/又はベースの一部としてかつ/又はエミッタとベースとの間に位置する空間電荷領域の一部として形成されている第2のサブセル(SC2)と、
第3の格子定数(a3)と第3のバンドギャップエネルギ(Eg3)とを有するInxGa1−xAs1−yPy化合物からなる層(S3)を有し、該層(S3)の厚さは100nmより大きく、該層(S3)はエミッタの一部としてかつ/又はベースの一部としてかつ/又はエミッタとベースとの間に位置する空間電荷領域の一部として形成されている第3のサブセル(SC3)と、
第4の格子定数(a4)と第4のバンドギャップエネルギ(Eg4)とを有するInGaAs化合物からなる層(S4)を有し、該層(S4)の厚さは100nmより大きく、該層(S4)はエミッタの一部としてかつ/又はベースの一部としてかつ/又はエミッタとベースとの間に位置する空間電荷領域の一部として形成されている第4のサブセル(SC4)と、
を備える、統合されたスタック状の4接合太陽電池であって、
バンドギャップエネルギに関して、Eg1>Eg2>Eg3>Eg4が成立し、
2つのサブセル(SC1,SC2,SC3,SC4)間にウエハボンドを有する領域が形成されており、
該領域は、最大200nmの厚さを有し、
格子定数は、該領域において少なくとも0.01nmの飛躍的変化をし、
結晶配向は、該領域において変化し、
無定形の中間層が該領域に形成されており、
かつ前記第3のサブセル(SC3)の層(S3)と前記第4のサブセル(SC4)の層(S4)とは、互いに格子整合されており、かつ/又はa3=a4±Δ1、ここでΔ1≦0.003nmであり、
かつ前記第2のサブセル(SC2)の層(S2)の化学量論に関して、1>m>0.9及び1>n>0.8が成立し、前記第3のサブセル(SC3)の層(S3)の化学量論に関して、1>x>0.2及び1>y>0.1が成立し、
かつ前記第1のサブセル(SC1)の層(S1)は、0.56nmの格子定数(a1)を有し、1.9eVのバンドギャップエネルギ(Eg1)を有する(Al)InGaPからなる化合物を有する、
ことを特徴とする、統合されたスタック状の4接合太陽電池。 - InP、GaAs、Ge、Si又は金属からなる化合物から基板が形成されている、請求項1記載の4接合太陽電池。
- 前記第4のサブセル(SC4)の層(S4)の厚さは、2.2μm未満である、請求項1又は2記載の4接合太陽電池。
- 半導体ミラー(DBR)が形成されている、請求項1から3までのいずれか1項記載の4接合太陽電池。
- 光学背面ミラー(OPT)を備え、該光学背面ミラー(OPT)は、金属化合物又は金属化合物と誘電性の層とからなる組み合わせを有する、請求項1から4までのいずれか1項記載の4接合太陽電池。
- 前記飛躍的変化が形成されている領域は、最大100nmの厚さを有する、請求項1から5までのいずれか1項記載の4接合太陽電池。
- 前記格子定数は、前記領域において少なくとも0.015nmの飛躍的変化をする、請求項1から6までのいずれか1項記載の4接合太陽電池。
- 前記第3のサブセル(SC3)の層(S3)と、前記第4のサブセル(SC4)の層(S4)とは、互いに格子整合されている、請求項1から7までのいずれか1項記載の4接合太陽電池。
- 前記格子定数に関してa3=a4±Δ2が成立し、ここでΔ2≦0.0015nmである、請求項1から8までのいずれか1項記載の4接合太陽電池。
- 前記第2のサブセル(SC2)の層(S2)の化学量論は、m>0.95及びn>0.9が成立する、請求項1から9までのいずれか1項記載の4接合太陽電池。
- 前記第3のサブセル(SC3)の層(S3)の化学量論に関して、x>0.65及びy>0.3が成立する、請求項1から10までのいずれか1項記載の4接合太陽電池。
- 前記第4のサブセル(SC4)の層(S4)は、InGaAsP化合物からなり、リン含有量は、V族の元素に関して5%より大きいかつ/又は30%より小さい、請求項1から11までのいずれか1項記載の4接合太陽電池。
- 前記第2のサブセル(SC2)の層(S2)のバンドギャップエネルギ(Eg2)は、1.3eV〜1.5eVであり、前記第3のサブセル(SC3)の層(S3)のバンドギャップエネルギ(Eg3)は、0.9eV〜1.1eVであり、前記第4のサブセル(SC4)の層(S4)のバンドギャップエネルギ(Eg4)は、0.6eV〜0.9eVである、請求項1から12までのいずれか1項記載の4接合太陽電池。
- 前記第1のサブセル(SC1)の層(S1)は、(Al)InGaPからなり、前記第2のサブセル(SC2)の層(S2)は、InPからなり、前記第3のサブセル(SC3)の層(S3)は、InGaAsPからなり、前記第4のサブセル(SC4)の層(S4)は、InGaAsからなる、請求項1から13までのいずれか1項記載の4接合太陽電池。
- 前記ウエハボンドは、前記第1のサブセル(SC1)と前記第2のサブセル(SC2)との間に形成されており、前記第2のサブセル(SC2)の層(S2)と前記第3のサブセル(SC3)の層(S3)とは、互いに格子整合されており、a2=a3±Δ1又はa2=a3±Δ2が成立する、請求項1から14までのいずれか1項記載の4接合太陽電池。
- 前記第1のサブセル(SC1)に素材結合を介してスーパーストレートが結合されており、該スーパーストレートは、カバーガラスを有する、請求項1から15までのいずれか1項記載の4接合太陽電池。
- 前記第3のサブセルと前記第4のサブセルとの間に半導体ミラーが形成されており、かつ/又は前記第4のサブセルの下に光学ミラー(OPT)が形成されている、請求項3から16までのいずれか1項記載の4接合太陽電池。
- 前記第1のサブセル(SC1)は、500nm〜2800nmの総厚さを有する、請求項1から17までのいずれか1項記載の4接合太陽電池。
- 前記第1のサブセル(SC1)において、前記第1のサブセル(SC1)の前記エミッタ、前記空間電荷領域及び前記ベースは、完全に(Al)InGaP化合物からなり、前記総厚さは、100nm〜300nmの厚さを有する第1のn型ドーピング領域と、400nm〜2500nmの厚さを有するp型ドーピング領域とに分けられ、前記第1のn型ドーピング領域は、Siドーピングを有し、前記p型ドーピング領域は、Znドーピングを有する、請求項18記載の4接合太陽電池。
- 前記第2のサブセル(SC2)は、150nm〜2800nmの総厚さを有し、前記第2のサブセル(SC2)の前記エミッタ、前記空間電荷領域及び前記ベースは、完全にInP化合物からなり、n型ドーピング領域は、Siドーピングを有し、p型ドーピング領域は、Znドーピングを有する、請求項1から19までのいずれか1項記載の4接合太陽電池。
- 前記第3のサブセル(SC3)は、1100nm〜2800nmの総厚さを有し、前記第2のサブセル(SC2)の前記エミッタ、前記空間電荷領域及び前記ベースは、完全にInGaAsP化合物からなり、n型ドーピング領域は、Siドーピングを有し、p型ドーピング領域は、Znドーピングを有する、請求項1から20までのいずれか1項記載の4接合太陽電池。
- 前記第4のサブセル(SC4)は、1100nm〜2800nmの総厚さを有し、前記第2のサブセル(SC2)のエミッタ、前記空間電荷領域及び前記ベースは、完全にInGaAs(P)化合物からなり、n型ドーピング領域は、Siドーピングを有し、p型ドーピング領域は、Znドーピングを有する、請求項1から21までのいずれか1項記載の4接合太陽電池。
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DE102017200700A1 (de) | 2017-01-18 | 2018-07-19 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Mehrfachsolarzelle mit rückseitiger Germanium-Teilzelle und deren Verwendung |
DE102018001181B3 (de) | 2018-02-15 | 2019-07-11 | Azur Space Solar Power Gmbh | Sonnenstandssensor |
DE102018115222A1 (de) * | 2018-06-25 | 2020-01-02 | Otto-Von-Guericke-Universität Magdeburg | Halbleiterschichtstapel und Verfahren zu dessen Herstellung |
EP3937259A1 (de) * | 2020-07-10 | 2022-01-12 | AZUR SPACE Solar Power GmbH | Monolithische metamorphe mehrfachsolarzelle |
EP4213224A1 (en) * | 2022-01-14 | 2023-07-19 | SolAero Technologies Corp., a corporation of the state of Delaware | Multijunction solar cells with shifted junction |
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JP2911659B2 (ja) * | 1991-09-24 | 1999-06-23 | キヤノン株式会社 | 光起電力素子 |
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US20090078310A1 (en) * | 2007-09-24 | 2009-03-26 | Emcore Corporation | Heterojunction Subcells In Inverted Metamorphic Multijunction Solar Cells |
US20080257405A1 (en) * | 2007-04-18 | 2008-10-23 | Emcore Corp. | Multijunction solar cell with strained-balanced quantum well middle cell |
US20100006143A1 (en) * | 2007-04-26 | 2010-01-14 | Welser Roger E | Solar Cell Devices |
RU2376679C1 (ru) * | 2008-09-16 | 2009-12-20 | Общество с ограниченной ответственностью "Технология Полупроводниковых Кристаллов" | Полупроводниковый многопереходный солнечный элемент |
KR20100084843A (ko) * | 2009-01-19 | 2010-07-28 | 삼성전자주식회사 | 다중접합 태양전지 |
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US8822817B2 (en) * | 2010-12-03 | 2014-09-02 | The Boeing Company | Direct wafer bonding |
US8677683B2 (en) * | 2011-08-15 | 2014-03-25 | Glayne Doolittle | Injection tip for use with an injector for injecting liquid chemical into a tree |
US20130048064A1 (en) * | 2011-08-29 | 2013-02-28 | Alliance For Sustainable Energy, Llc | Interconnections for Mechanically Stacked Multijunction Solar Cells |
CN103022057A (zh) * | 2011-09-21 | 2013-04-03 | 索尼公司 | 多结太阳能电池、光电转换元件和化合物半导体层叠层结构体 |
JP5758257B2 (ja) * | 2011-09-30 | 2015-08-05 | シャープ株式会社 | 化合物半導体太陽電池製造用積層体、化合物半導体太陽電池およびその製造方法 |
US20130092218A1 (en) * | 2011-10-17 | 2013-04-18 | International Business Machines Corporation | Back-surface field structures for multi-junction iii-v photovoltaic devices |
WO2013074530A2 (en) * | 2011-11-15 | 2013-05-23 | Solar Junction Corporation | High efficiency multijunction solar cells |
DE102012004734A1 (de) | 2012-03-08 | 2013-09-12 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Mehrfachsolarzelle und deren Verwendung |
EP2645429A1 (en) * | 2012-03-28 | 2013-10-02 | Soitec | Manufacture of multijunction solar cell devices |
CN103000759B (zh) * | 2012-10-08 | 2015-03-11 | 天津蓝天太阳科技有限公司 | 砷化镓薄膜多结叠层太阳电池的制备方法 |
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EP3012874A1 (de) | 2016-04-27 |
CN105552157A (zh) | 2016-05-04 |
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