JP6325002B2 - レーザダイオードデバイスにおける熱管理 - Google Patents

レーザダイオードデバイスにおける熱管理 Download PDF

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Publication number
JP6325002B2
JP6325002B2 JP2015556088A JP2015556088A JP6325002B2 JP 6325002 B2 JP6325002 B2 JP 6325002B2 JP 2015556088 A JP2015556088 A JP 2015556088A JP 2015556088 A JP2015556088 A JP 2015556088A JP 6325002 B2 JP6325002 B2 JP 6325002B2
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Japan
Prior art keywords
laser diode
circuit board
printed circuit
coupler
heat sink
Prior art date
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Active
Application number
JP2015556088A
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English (en)
Japanese (ja)
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JP2016507160A5 (enExample
JP2016507160A (ja
Inventor
カヌマラ，スリドハル
マクナリー，スティーヴン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Microsoft Corp
Microsoft Technology Licensing LLC
Original Assignee
Microsoft Corp
Microsoft Technology Licensing LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
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Publication of JP2016507160A publication Critical patent/JP2016507160A/ja
Publication of JP2016507160A5 publication Critical patent/JP2016507160A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02208—Mountings; Housings characterised by the shape of the housings
    • H01S5/02212—Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02438—Characterized by cooling of elements other than the laser chip, e.g. an optical element being part of an external cavity or a collimating lens
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06226—Modulation at ultra-high frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP2015556088A 2013-02-04 2014-01-29 レーザダイオードデバイスにおける熱管理 Active JP6325002B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/758,804 US8958448B2 (en) 2013-02-04 2013-02-04 Thermal management in laser diode device
US13/758,804 2013-02-04
PCT/US2014/013467 WO2014120697A1 (en) 2013-02-04 2014-01-29 Thermal management in laser diode device

Publications (3)

Publication Number Publication Date
JP2016507160A JP2016507160A (ja) 2016-03-07
JP2016507160A5 JP2016507160A5 (enExample) 2017-02-16
JP6325002B2 true JP6325002B2 (ja) 2018-05-16

Family

ID=50150789

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015556088A Active JP6325002B2 (ja) 2013-02-04 2014-01-29 レーザダイオードデバイスにおける熱管理

Country Status (6)

Country Link
US (1) US8958448B2 (enExample)
EP (1) EP2951897B1 (enExample)
JP (1) JP6325002B2 (enExample)
KR (1) KR102161332B1 (enExample)
CN (1) CN104969426B (enExample)
WO (1) WO2014120697A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
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EP2962537B1 (en) * 2013-02-28 2020-04-08 Lawrence Livermore National Security, LLC Compact high current, high efficiency laser diode driver
JP2015206818A (ja) * 2014-04-17 2015-11-19 日立金属株式会社 光通信モジュール
CN106154703B (zh) * 2015-03-30 2018-01-02 中强光电股份有限公司 投影装置
KR102496479B1 (ko) 2015-10-22 2023-02-06 삼성전자주식회사 3차원 카메라와 투과도 측정방법
US10386486B2 (en) 2016-06-21 2019-08-20 Microsoft Technology Licensing, Llc Systems and methods for time of flight laser pulse engineering
US10051723B2 (en) 2016-07-29 2018-08-14 Microsoft Technology Licensing, Llc High thermal conductivity region for optoelectronic devices
CN108336040A (zh) * 2017-01-19 2018-07-27 深圳奥比中光科技有限公司 芯片嵌入装置
EP3783759B1 (en) * 2018-04-19 2024-05-01 Sony Semiconductor Solutions Corporation Semiconductor laser drive device and method for manufacturing same
CN114690338A (zh) * 2020-12-30 2022-07-01 华为技术有限公司 发送光组件、双向光组件、光模块、及光通信设备
US20230106189A1 (en) * 2021-10-01 2023-04-06 Lawrence Livermore National Security, Llc Patterning of diode/substrate interface to reduce thermal lensing

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JPH11185273A (ja) 1997-12-16 1999-07-09 Sony Corp 光ピックアップ装置
US6285476B1 (en) 1998-06-10 2001-09-04 Lsa, Inc. Laser communication system and methods
US20020097468A1 (en) 2001-01-24 2002-07-25 Fsona Communications Corporation Laser communication system
US6653557B2 (en) 2002-02-27 2003-11-25 Jds Uniphase Corporation Faraday cage and ceramic walls for shielding EMI
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KR100499005B1 (ko) 2002-12-27 2005-07-01 삼성전기주식회사 다채널 블록형 광원소자가 패키징된 인쇄회로기판
JP2005317925A (ja) * 2004-04-02 2005-11-10 Ricoh Co Ltd 光源装置、記録装置、製版装置及び画像形成装置
US20060018098A1 (en) 2004-07-22 2006-01-26 Adrian Hill PCB board incorporating thermo-encapsulant for providing controlled heat dissipation and electromagnetic functions and associated method of manufacturing a PCB board
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Also Published As

Publication number Publication date
KR102161332B1 (ko) 2020-09-29
CN104969426A (zh) 2015-10-07
CN104969426B (zh) 2018-03-30
US8958448B2 (en) 2015-02-17
EP2951897A1 (en) 2015-12-09
EP2951897B1 (en) 2016-04-27
KR20150115928A (ko) 2015-10-14
WO2014120697A1 (en) 2014-08-07
JP2016507160A (ja) 2016-03-07
US20140219302A1 (en) 2014-08-07

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