KR102161332B1 - 레이저 다이오드 디바이스에서의 열 관리 - Google Patents

레이저 다이오드 디바이스에서의 열 관리 Download PDF

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KR102161332B1
KR102161332B1 KR1020157024248A KR20157024248A KR102161332B1 KR 102161332 B1 KR102161332 B1 KR 102161332B1 KR 1020157024248 A KR1020157024248 A KR 1020157024248A KR 20157024248 A KR20157024248 A KR 20157024248A KR 102161332 B1 KR102161332 B1 KR 102161332B1
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South Korea
Prior art keywords
laser diode
circuit board
printed circuit
heat sink
coupler
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Korean (ko)
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KR20150115928A (ko
Inventor
시리드하르 카누말라
스테판 맥널리
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마이크로소프트 테크놀로지 라이센싱, 엘엘씨
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
    • H01L21/82—
    • H01S5/02248—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02208—Mountings; Housings characterised by the shape of the housings
    • H01S5/02212—Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02438—Characterized by cooling of elements other than the laser chip, e.g. an optical element being part of an external cavity or a collimating lens
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06226—Modulation at ultra-high frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
KR1020157024248A 2013-02-04 2014-01-29 레이저 다이오드 디바이스에서의 열 관리 Active KR102161332B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/758,804 2013-02-04
US13/758,804 US8958448B2 (en) 2013-02-04 2013-02-04 Thermal management in laser diode device
PCT/US2014/013467 WO2014120697A1 (en) 2013-02-04 2014-01-29 Thermal management in laser diode device

Publications (2)

Publication Number Publication Date
KR20150115928A KR20150115928A (ko) 2015-10-14
KR102161332B1 true KR102161332B1 (ko) 2020-09-29

Family

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Family Applications (1)

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KR1020157024248A Active KR102161332B1 (ko) 2013-02-04 2014-01-29 레이저 다이오드 디바이스에서의 열 관리

Country Status (6)

Country Link
US (1) US8958448B2 (enExample)
EP (1) EP2951897B1 (enExample)
JP (1) JP6325002B2 (enExample)
KR (1) KR102161332B1 (enExample)
CN (1) CN104969426B (enExample)
WO (1) WO2014120697A1 (enExample)

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JP6494532B2 (ja) * 2013-02-28 2019-04-03 ローレンス リバモア ナショナル セキュリティー， エルエルシー コンパクトな高電流高効率レーザダイオードドライバ
JP2015206818A (ja) * 2014-04-17 2015-11-19 日立金属株式会社 光通信モジュール
CN106154703B (zh) * 2015-03-30 2018-01-02 中强光电股份有限公司 投影装置
KR102496479B1 (ko) 2015-10-22 2023-02-06 삼성전자주식회사 3차원 카메라와 투과도 측정방법
US10386486B2 (en) 2016-06-21 2019-08-20 Microsoft Technology Licensing, Llc Systems and methods for time of flight laser pulse engineering
US10051723B2 (en) 2016-07-29 2018-08-14 Microsoft Technology Licensing, Llc High thermal conductivity region for optoelectronic devices
CN108336040A (zh) * 2017-01-19 2018-07-27 深圳奥比中光科技有限公司 芯片嵌入装置
KR102629637B1 (ko) * 2018-04-19 2024-01-30 소니 세미컨덕터 솔루션즈 가부시키가이샤 반도체 레이저 구동 장치 및 그 제조 방법
CN114690338A (zh) * 2020-12-30 2022-07-01 华为技术有限公司 发送光组件、双向光组件、光模块、及光通信设备
US20230106189A1 (en) * 2021-10-01 2023-04-06 Lawrence Livermore National Security, Llc Patterning of diode/substrate interface to reduce thermal lensing

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Also Published As

Publication number Publication date
KR20150115928A (ko) 2015-10-14
US20140219302A1 (en) 2014-08-07
WO2014120697A1 (en) 2014-08-07
JP6325002B2 (ja) 2018-05-16
JP2016507160A (ja) 2016-03-07
EP2951897B1 (en) 2016-04-27
CN104969426A (zh) 2015-10-07
EP2951897A1 (en) 2015-12-09
US8958448B2 (en) 2015-02-17
CN104969426B (zh) 2018-03-30

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