JP6312376B2 - 表面増強ラマン散乱素子、及び、表面増強ラマン散乱素子を製造する方法 - Google Patents

表面増強ラマン散乱素子、及び、表面増強ラマン散乱素子を製造する方法 Download PDF

Info

Publication number
JP6312376B2
JP6312376B2 JP2013142165A JP2013142165A JP6312376B2 JP 6312376 B2 JP6312376 B2 JP 6312376B2 JP 2013142165 A JP2013142165 A JP 2013142165A JP 2013142165 A JP2013142165 A JP 2013142165A JP 6312376 B2 JP6312376 B2 JP 6312376B2
Authority
JP
Japan
Prior art keywords
conductor layer
raman scattering
enhanced raman
substrate
scattering element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2013142165A
Other languages
English (en)
Japanese (ja)
Other versions
JP2015014547A5 (xx
JP2015014547A (ja
Inventor
芳弘 丸山
芳弘 丸山
柴山 勝己
勝己 柴山
将師 伊藤
将師 伊藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu Photonics KK
Original Assignee
Hamamatsu Photonics KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2013142165A priority Critical patent/JP6312376B2/ja
Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK
Priority to US14/420,546 priority patent/US10132755B2/en
Priority to DE112013003984.2T priority patent/DE112013003984B4/de
Priority to CN201380042590.8A priority patent/CN104541158B/zh
Priority to PCT/JP2013/071709 priority patent/WO2014025038A1/ja
Priority to CN201710277079.6A priority patent/CN107255630B/zh
Publication of JP2015014547A publication Critical patent/JP2015014547A/ja
Publication of JP2015014547A5 publication Critical patent/JP2015014547A5/ja
Application granted granted Critical
Publication of JP6312376B2 publication Critical patent/JP6312376B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Landscapes

  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
JP2013142165A 2012-08-10 2013-07-05 表面増強ラマン散乱素子、及び、表面増強ラマン散乱素子を製造する方法 Active JP6312376B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2013142165A JP6312376B2 (ja) 2013-07-05 2013-07-05 表面増強ラマン散乱素子、及び、表面増強ラマン散乱素子を製造する方法
DE112013003984.2T DE112013003984B4 (de) 2012-08-10 2013-08-09 Element zur oberflächenverstärkten Raman-Streuung und Verfahren zum Herstellen eines Elements zur oberflächenverstärkten Raman-Streuung
CN201380042590.8A CN104541158B (zh) 2012-08-10 2013-08-09 表面增强拉曼散射元件、以及制造表面增强拉曼散射元件的方法
PCT/JP2013/071709 WO2014025038A1 (ja) 2012-08-10 2013-08-09 表面増強ラマン散乱素子、及び、表面増強ラマン散乱素子を製造する方法
US14/420,546 US10132755B2 (en) 2012-08-10 2013-08-09 Surface-enhanced Raman scattering element, and method for manufacturing surface-enhanced Raman scattering element
CN201710277079.6A CN107255630B (zh) 2012-08-10 2013-08-09 表面增强拉曼散射元件、以及制造表面增强拉曼散射元件的方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013142165A JP6312376B2 (ja) 2013-07-05 2013-07-05 表面増強ラマン散乱素子、及び、表面増強ラマン散乱素子を製造する方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2018052704A Division JP6335410B1 (ja) 2018-03-20 2018-03-20 表面増強ラマン散乱素子

Publications (3)

Publication Number Publication Date
JP2015014547A JP2015014547A (ja) 2015-01-22
JP2015014547A5 JP2015014547A5 (xx) 2016-08-12
JP6312376B2 true JP6312376B2 (ja) 2018-04-18

Family

ID=52436353

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013142165A Active JP6312376B2 (ja) 2012-08-10 2013-07-05 表面増強ラマン散乱素子、及び、表面増強ラマン散乱素子を製造する方法

Country Status (1)

Country Link
JP (1) JP6312376B2 (xx)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6564203B2 (ja) * 2015-02-26 2019-08-21 浜松ホトニクス株式会社 表面増強ラマン散乱素子及びその製造方法
KR101775989B1 (ko) * 2015-07-24 2017-09-07 이화여자대학교 산학협력단 하이브리드 나노구조체들의 배열을 포함하는 광 필터 및 이의 제조 방법
KR101691956B1 (ko) * 2015-07-24 2017-01-02 이화여자대학교 산학협력단 광 필터 및 이의 제조 방법
KR101886619B1 (ko) * 2016-05-17 2018-08-10 충남대학교산학협력단 표면증강 라만산란 기판, 이를 포함하는 분자 검출용 소자 및 이의 제조방법
JP7236664B2 (ja) 2017-10-04 2023-03-10 パナソニックIpマネジメント株式会社 センサ基板、検出装置及びセンサ基板の製造方法
WO2020039741A1 (ja) 2018-08-24 2020-02-27 パナソニックIpマネジメント株式会社 金属微細構造体および検出装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060225162A1 (en) * 2005-03-30 2006-10-05 Sungsoo Yi Method of making a substrate structure with enhanced surface area
US7388661B2 (en) * 2006-10-20 2008-06-17 Hewlett-Packard Development Company, L.P. Nanoscale structures, systems, and methods for use in nano-enhanced raman spectroscopy (NERS)
US20110166045A1 (en) * 2009-12-01 2011-07-07 Anuj Dhawan Wafer scale plasmonics-active metallic nanostructures and methods of fabricating same
CN105911814A (zh) * 2010-05-21 2016-08-31 普林斯顿大学 用于增强局部电场、光吸收、光辐射、材料检测的结构以及用于制作和使用此结构的方法

Also Published As

Publication number Publication date
JP2015014547A (ja) 2015-01-22

Similar Documents

Publication Publication Date Title
WO2014025038A1 (ja) 表面増強ラマン散乱素子、及び、表面増強ラマン散乱素子を製造する方法
WO2014025035A1 (ja) 表面増強ラマン散乱素子
JP6312376B2 (ja) 表面増強ラマン散乱素子、及び、表面増強ラマン散乱素子を製造する方法
JP6023509B2 (ja) 表面増強ラマン散乱ユニット
WO2014025037A1 (ja) 表面増強ラマン散乱素子及びその製造方法
TWI611175B (zh) 表面增強拉曼散射單元及拉曼分光分析方法
CN109001174B (zh) 表面增强拉曼散射元件
JP5908370B2 (ja) 表面増強ラマン散乱ユニット
US10393663B2 (en) Surface-enhanced raman scattering element and method for manufacturing same
WO2014156330A1 (ja) 表面増強ラマン散乱ユニット、及びラマン分光分析方法
JP6023669B2 (ja) 表面増強ラマン散乱素子
JP6203558B2 (ja) 表面増強ラマン散乱素子及びその製造方法
JP6335410B1 (ja) 表面増強ラマン散乱素子
Fan et al. Wafer-scale fabrication of metal nanoring and nanocrescent arrays from nanoimprinted nanopillar arrays

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160623

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20160623

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20170606

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20170802

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20171004

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20180220

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20180320

R150 Certificate of patent or registration of utility model

Ref document number: 6312376

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150