JP6299372B2 - Semiconductor device and manufacturing method thereof - Google Patents
Semiconductor device and manufacturing method thereof Download PDFInfo
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- JP6299372B2 JP6299372B2 JP2014086540A JP2014086540A JP6299372B2 JP 6299372 B2 JP6299372 B2 JP 6299372B2 JP 2014086540 A JP2014086540 A JP 2014086540A JP 2014086540 A JP2014086540 A JP 2014086540A JP 6299372 B2 JP6299372 B2 JP 6299372B2
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- 239000004065 semiconductor Substances 0.000 title claims description 135
- 238000004519 manufacturing process Methods 0.000 title claims description 25
- 239000011342 resin composition Substances 0.000 claims description 146
- 229920005989 resin Polymers 0.000 claims description 107
- 239000011347 resin Substances 0.000 claims description 107
- 239000000758 substrate Substances 0.000 claims description 39
- 230000009477 glass transition Effects 0.000 claims description 37
- 239000003086 colorant Substances 0.000 claims description 36
- 238000000034 method Methods 0.000 claims description 31
- 239000000843 powder Substances 0.000 claims description 30
- 238000007789 sealing Methods 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 18
- 239000011248 coating agent Substances 0.000 claims description 16
- 238000000576 coating method Methods 0.000 claims description 16
- 239000003822 epoxy resin Substances 0.000 claims description 10
- 229920000647 polyepoxide Polymers 0.000 claims description 10
- 238000007654 immersion Methods 0.000 claims description 7
- 239000002245 particle Substances 0.000 claims description 6
- 229920001187 thermosetting polymer Polymers 0.000 claims description 5
- PEEHTFAAVSWFBL-UHFFFAOYSA-N Maleimide Chemical compound O=C1NC(=O)C=C1 PEEHTFAAVSWFBL-UHFFFAOYSA-N 0.000 claims description 4
- 238000009826 distribution Methods 0.000 claims description 4
- 238000007598 dipping method Methods 0.000 claims description 3
- 239000005011 phenolic resin Substances 0.000 claims description 3
- 150000002989 phenols Chemical class 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 42
- 229910052802 copper Inorganic materials 0.000 description 42
- 239000010949 copper Substances 0.000 description 42
- 230000000052 comparative effect Effects 0.000 description 22
- 238000012360 testing method Methods 0.000 description 19
- 229910000679 solder Inorganic materials 0.000 description 11
- 239000012530 fluid Substances 0.000 description 6
- 238000009413 insulation Methods 0.000 description 6
- 239000007787 solid Substances 0.000 description 6
- 239000000919 ceramic Substances 0.000 description 5
- 230000008859 change Effects 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 238000000465 moulding Methods 0.000 description 5
- 239000000049 pigment Substances 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- 238000004040 coloring Methods 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 239000004519 grease Substances 0.000 description 4
- 239000000025 natural resin Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000005219 brazing Methods 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 229920006015 heat resistant resin Polymers 0.000 description 2
- 229930014626 natural product Natural products 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 238000004382 potting Methods 0.000 description 2
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000003431 cross linking reagent Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011256 inorganic filler Substances 0.000 description 1
- 229910003475 inorganic filler Inorganic materials 0.000 description 1
- 239000001023 inorganic pigment Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
Description
この発明は、パワー半導体モジュールなどの半導体装置およびその製造方法に関する。 The present invention relates to a semiconductor device such as a power semiconductor module and a manufacturing method thereof.
図３は、従来の半導体装置２００の要部断面図である。半導体装置２００は、樹脂封止構造の半導体装置である。この半導体装置２００は、ＡＭＢ（Ａｃｔｉｖｅ Ｍｅｔａｌ Ｂｒａｚｉｎｇ）基板１と、ＡＭＢ基板１のおもて側の厚銅板３上にはんだ１０で電気的に接続した半導体チップ１１を備える。さらに、半導体チップ１１の上方には、絶縁板６と、絶縁板６のおもて側に配置された銅板７と、絶縁板６の裏側に配置された銅板８と、を備えた絶縁回路基板５が配置されている。絶縁回路基板５の銅板７、８は、銅ピン９とはんだ１２を介して半導体チップ１１と電気的に接続されている。そして、外部端子１３が、厚銅板３上にはんだ１４で電気的に接続されている。ＡＭＢ基板１裏面の厚銅板４の下面と外部端子１３の一部を除いて、ＡＭＢ基板１と絶縁回路基板５と外部端子１３と銅ピン９と半導体素子１１と各はんだ１０，１２，１４は、樹脂組成物２０で封止されている。ＡＭＢ基板１は、セラミック基板５２のおもて側、裏側に厚銅板３，４をＡＭＢ法で接合した放熱用の絶縁基板であり、おもて側の厚銅板３には回路配線となるパターンが形成されている。絶縁回路基板５はポリイミドなどの絶縁板６のおもて側と裏側に固着した銅板７，８と、裏側の銅板８に固着した銅ピン９で構成され、銅ピン９がはんだ１２で半導体チップ１１に固着されている。前記の樹脂組成物２０により、半導体チップ１１、ＡＭＢ基板１、絶縁回路基板５および外部端子１３の相互間の絶縁性が確保されている。
半導体装置２００は図示しない冷却体に取り付けられ放熱される。この場合、裏側の厚銅板４と冷却体との隙間を埋めて伝熱性を確保するために、一般にシリコーン系の放熱グリスを塗布している。また、放熱グリスの代わりに熱伝導シートを用いることもある。
上記のように、従来の半導体装置２００は、樹脂組成物２０が用いられているが、製品に特長を出すため樹脂組成物２０の色をさまざまに変える要望がある。さらに、樹脂組成物２０に求められる特性としては、家電製品などから電力関連機器などへ大容量化が進むにつれて、耐熱性の向上が求められている。
FIG. 3 is a cross-sectional view of a main part of a conventional semiconductor device 200. The semiconductor device 200 is a semiconductor device having a resin sealing structure. This semiconductor device 200 includes an AMB (Active Metal Brazing) substrate 1 and a semiconductor chip 11 electrically connected with a solder 10 on a thick copper plate 3 on the front side of the AMB substrate 1. Furthermore, an insulating circuit board including an insulating plate 6, a copper plate 7 disposed on the front side of the insulating plate 6, and a copper plate 8 disposed on the back side of the insulating plate 6 above the semiconductor chip 11. 5 is arranged. The copper plates 7 and 8 of the insulated circuit board 5 are electrically connected to the semiconductor chip 11 via copper pins 9 and solder 12. The external terminals 13 are electrically connected to the thick copper plate 3 with solder 14. Except for the lower surface of the thick copper plate 4 on the back surface of the AMB substrate 1 and a part of the external terminal 13, the AMB substrate 1, the insulating circuit substrate 5, the external terminal 13, the copper pin 9, the semiconductor element 11, and the solders 10, 12, and 14 The resin composition 20 is sealed. The AMB substrate 1 is an insulating substrate for heat dissipation in which the thick copper plates 3 and 4 are joined to the front side and the back side of the ceramic substrate 52 by the AMB method. The pattern on the front thick copper plate 3 is a circuit wiring. Is formed. The insulating circuit board 5 is composed of copper plates 7 and 8 fixed to the front side and the back side of an insulating plate 6 such as polyimide, and copper pins 9 fixed to the copper plate 8 on the back side. 11 is fixed. The resin composition 20 ensures insulation between the semiconductor chip 11, the AMB substrate 1, the insulating circuit substrate 5, and the external terminals 13.
The semiconductor device 200 is attached to a cooling body (not shown) and radiates heat. In this case, in order to fill the gap between the thick copper plate 4 on the back side and the cooling body to ensure heat conductivity, silicone-based heat radiation grease is generally applied. Moreover, a heat conductive sheet may be used instead of the heat radiation grease.
As described above, in the conventional semiconductor device 200, the resin composition 20 is used. However, there is a demand to change the color of the resin composition 20 in various ways in order to give a feature to the product. Furthermore, as the characteristics required for the resin composition 20, improvement in heat resistance is required as the capacity increases from home appliances to power-related devices.
また、特許文献１では、半導体素子が金属リードフレームのインナーリード又は有機回路基板の回路とワイヤーで接続された半導体装置において、ワイヤーの周囲部を液状樹脂組成物の硬化物（第１の樹脂）で封止し、更にその上から固形の樹脂組成物の硬化物（第２の樹脂）で封止することで、導電性異物に起因する電気的短絡不良を防止することが記載されている。また、液状樹脂組成物と固形の樹脂組成物のそれぞれのガラス転移温度Ｔｇは、１００℃と１３０℃であることが記載されている。 Further, in Patent Document 1, in a semiconductor device in which a semiconductor element is connected to an inner lead of a metal lead frame or a circuit of an organic circuit board by a wire, a cured product (first resin) of a liquid resin composition is formed around the wire. It is described that the electrical short circuit failure caused by the conductive foreign matter is prevented by sealing with a solid resin composition and further sealing with a cured product (second resin) of the solid resin composition. Further, it is described that the glass transition temperatures Tg of the liquid resin composition and the solid resin composition are 100 ° C. and 130 ° C., respectively.
また、特許文献２では、基板と、前記基板の少なくとも一方側に設けられる半導体素子と、前記基板、半導体素子、前記半導体素子との間を充填する第１の樹脂組成物を硬化させて得られる第１の樹脂と、前記基板および前記第１の樹脂を覆い、前記第１の樹脂組成物を硬化した後に、第２の樹脂組成物を硬化させて得られる第２の樹脂を有している半導体装置が記載されている。そして、第１の樹脂と第２の樹脂との接着強度が、室温で１８ＭＰａ以上であることが記載されている。 Moreover, in patent document 2, it obtains by hardening the 1st resin composition with which a board | substrate, the semiconductor element provided in the at least one side of the said board | substrate, and the said board | substrate, a semiconductor element, and the said semiconductor element are filled. A first resin, and a second resin obtained by curing the second resin composition after covering the substrate and the first resin and curing the first resin composition. A semiconductor device is described. And it is described that the adhesive strength between the first resin and the second resin is 18 MPa or more at room temperature.
また、特許文献３では、樹脂封止型半導体装置の樹脂表面を導電性被膜で被覆することで、樹脂封止型半導体装置の帯電防止した半導体装置が記載されている。また、半導体を絶縁体モールド（第１の樹脂）で封止後、着色された導電性被膜をコーティングすると色で種類を判断できることが記載されている。 Patent Document 3 describes a semiconductor device in which the resin-encapsulated semiconductor device is prevented from being charged by covering the resin surface of the resin-encapsulated semiconductor device with a conductive film. Further, it is described that the type can be determined by color when a semiconductor is sealed with an insulator mold (first resin) and then coated with a colored conductive film.
また、特許文献４では、半導体素子、リード、さらにこれらの両者を接続するボンディングワイヤを含む本体構成部を一体的に封止する第１の封止樹脂体と、この第１の封止樹脂体の外周部の少なくとも一部を被覆するように形成された第２の封止樹脂体とを具備し、前記第１の封止樹脂体の線膨張率よりも、前記第２の封止樹脂体の線膨張率が小さくされるように、前記第１のおよび第２の封止樹脂体が選定されるようにした半導体装置が記載されている。 Further, in Patent Document 4, a first sealing resin body that integrally seals a main body component including a semiconductor element, a lead, and a bonding wire that connects both of them, and the first sealing resin body A second sealing resin body formed so as to cover at least a part of the outer peripheral portion of the first sealing resin body, and the second sealing resin body has a linear expansion coefficient higher than that of the first sealing resin body. There is described a semiconductor device in which the first and second sealing resin bodies are selected so that the linear expansion coefficient is reduced.
従来の半導体装置２００で着色された樹脂組成物２０の色を変更するには、例えば、顔料を添加した樹脂を用いて、高価なトランスファー法により樹脂組成物２０を成型する方法が行われる。しかし、樹脂への顔料添加により、樹脂の不純物濃度が上がり腐食の可能性が高まり、樹脂組成物２０の耐湿性が低下するという問題が発生する。また、前記したように、現状の樹脂組成物２０の耐熱性は必ずしも要望を十分に満足していない。
耐湿性および耐熱性が低い樹脂組成物２０で被覆された半導体装置２００が、高温環境下に晒されると、樹脂組成物２０に割れ、カケまたは剥離などが生じて絶縁破壊を起こす可能性がある。
In order to change the color of the resin composition 20 colored by the conventional semiconductor device 200, for example, a method of molding the resin composition 20 by an expensive transfer method using a resin to which a pigment is added is performed. However, the addition of the pigment to the resin raises the impurity concentration of the resin and increases the possibility of corrosion, resulting in a problem that the moisture resistance of the resin composition 20 is lowered. Further, as described above, the heat resistance of the current resin composition 20 does not necessarily satisfy the request sufficiently.
When the semiconductor device 200 coated with the resin composition 20 having low moisture resistance and heat resistance is exposed to a high temperature environment, the resin composition 20 may be cracked, chipped, peeled off, or the like, which may cause dielectric breakdown. .
また、特許文献１では、第１樹脂および第２樹脂のガラス転移温度Ｔｇが１００℃、１３０℃と低いために、耐熱性が低いものと推測される。 Moreover, in patent document 1, since the glass transition temperature Tg of 1st resin and 2nd resin is as low as 100 degreeC and 130 degreeC, it is estimated that heat resistance is low.
また、特許文献２では、第１の樹脂と第２の樹脂の接着強度を高めることは記載されているが、樹脂のガラス転移温度Ｔｇが低く耐熱性が低いものと推測される。 Patent Document 2 describes that the adhesive strength between the first resin and the second resin is increased, but it is presumed that the glass transition temperature Tg of the resin is low and the heat resistance is low.
また、特許文献３では、第２の樹脂は導電性であり、絶縁性が要求される樹脂には用いられない。 Moreover, in patent document 3, 2nd resin is electroconductivity and is not used for resin by which insulation is requested | required.
前記の特許文献１〜４では、樹脂組成物の表面に色をつけるために、樹脂組成物よりもガラス転移温度Ｔｇが高く絶縁性の樹脂粉体と、着色剤とを含んだ混合物で樹脂組成物の表面に絶縁被膜にさらに形成することについては記載されていない。 In Patent Documents 1 to 4, in order to color the surface of the resin composition, the resin composition is a mixture containing an insulating resin powder having a glass transition temperature Tg higher than that of the resin composition and a colorant. There is no description about further forming an insulating film on the surface of the object.
この発明の目的は、前記の課題を解決して、安価な設備で樹脂組成物２０の色の変更ができて、耐熱性の向上を図ることができる半導体装置およびその製造方法を提供することである。 An object of the present invention is to provide a semiconductor device that can solve the above-described problems, can change the color of the resin composition 20 with inexpensive equipment, and can improve heat resistance, and a method for manufacturing the same. is there.
前記の目的を達成するために、本発明の第１の態様は、ＡＭＢ基板と、前記ＡＭＢ基板に電気的に接続された半導体チップと、前記半導体チップと電気的に接続された外部端子と、前記ＡＭＢ基板、前記半導体チップ、前記外部端子の一部を封止し、着色剤を含有しない樹脂であって、ガラス転移温度が２１０℃以上である第１樹脂組成物と、前記第１樹脂組成物の表面を被覆し、前記第１樹脂組成物より高いガラス転移温度を有し、着色剤を含有する第２樹脂組成物と、を備える。着色剤を含まない第１樹脂組成物で絶縁基板と半導体チップと外部端子を封止することで、第１樹脂組成物の内部に封止された部品が腐食が防止されることを防止でき、第１樹脂組成物より高いガラス転移温度を有し着色剤を含有する第２樹脂組成物で第１樹脂組成物を被覆することで、半導体装置の表面の色を容易に変更でき、半導体装置の耐湿性と耐熱性を高めることができる。
なお、ガラス転移温度の測定は、ＴＭＡ（Ｔｈｅｒｍａｌ Ｍｅｃｈａｎｉｃａｌ Ａｎａｌｙｓｉｓ）法にて測定した。第１樹脂組成物のガラス転移温度が２１０℃未満であると耐熱性が低く、例えば、半導体素子の最高動作温度が１７５℃や２００℃である場合に対応できないという問題がある。例えば、第１樹脂組成物のガラス転移温度の上限は、２３０℃以下であることが望ましい。例えば、第１樹脂組成物としてエポキシ樹脂を用いる場合、第１樹脂組成物のガラス転移温度が２３０℃を超えるものを製造することが困難である。エポキシ樹脂は、２３０℃を超えるとエポキシ樹脂に添加されている難燃剤が昇華したり、エポキシ樹脂のＣ−Ｏ結合が切断されて樹脂が劣化し、樹脂が割れたり、欠けたりする問題が生じる可能性がある。
To achieve the above object, a first aspect of the present invention includes an AMB substrate, a semiconductor chip electrically connected to the AMB substrate, an external terminal electrically connected to the semiconductor chip, A resin that seals part of the AMB substrate, the semiconductor chip, and the external terminals and does not contain a colorant, and has a glass transition temperature of 210 ° C. or higher, and the first resin composition A second resin composition having a glass transition temperature higher than that of the first resin composition and containing a colorant. By sealing the insulating substrate, the semiconductor chip, and the external terminal with the first resin composition not containing the colorant, it is possible to prevent the parts sealed inside the first resin composition from being prevented from being corroded, By coating the first resin composition with a second resin composition having a glass transition temperature higher than that of the first resin composition and containing a colorant, the color of the surface of the semiconductor device can be easily changed. Moisture resistance and heat resistance can be improved.
The glass transition temperature was measured by a TMA (Thermal Mechanical Analysis) method. When the glass transition temperature of the first resin composition is less than 210 ° C., the heat resistance is low, and there is a problem that, for example, it is not possible to cope with the case where the maximum operating temperature of the semiconductor element is 175 ° C. or 200 ° C. For example, the upper limit of the glass transition temperature of the first resin composition is desirably 230 ° C. or lower. For example, when using an epoxy resin as a 1st resin composition, it is difficult to manufacture what has a glass transition temperature of the 1st resin composition exceeding 230 degreeC. When the temperature of the epoxy resin exceeds 230 ° C., the flame retardant added to the epoxy resin sublimates, or the C—O bond of the epoxy resin is cut and the resin deteriorates, causing a problem that the resin is cracked or chipped. there is a possibility.
また、本発明の第２の態様は、前記第１の態様において、前記第２樹脂組成物のガラス転移温度が、２３５℃以上である。第２樹脂組成物のガラス転移温度が第１樹脂組成物のガラス転移温度より高いので、前記第２樹脂組成物で覆われていない半導体装置よりも、耐熱性を向上できる。第２樹脂組成物のガラス転移温度が２３５℃未満であると上記と同様に耐熱性が不十分という問題がある。第２樹脂組成物のガラス転移温度は、３５０℃以下が望ましい。 Further, according to a second aspect of the present invention, in the first aspect, the glass transition temperature of the second resin composition is 235 ° C. or higher. Since the glass transition temperature of the 2nd resin composition is higher than the glass transition temperature of the 1st resin composition, heat resistance can be improved rather than the semiconductor device which is not covered with the 2nd resin composition. When the glass transition temperature of the second resin composition is less than 235 ° C., there is a problem that heat resistance is insufficient as described above. The glass transition temperature of the second resin composition is desirably 350 ° C. or lower.
また、本発明の第３の態様は、前記第１または第２の態様において、前記第２樹脂組成物の厚さを、１００μｍ以上、５００μｍ以下にすることである。そうすれば、第１樹脂組成物を第２樹脂組成物で良好に被覆でき、また第２樹脂組成物の厚みムラの少ない被覆ができる。前記第２樹脂組成物の厚さが、１００μｍ未満では、下地の第１樹脂組成物１５が露出する個所が発生し易い。一方、５００μｍ超では、厚さにムラができ易く商品価値が低下する。そのため、さらに好ましくは、２００μｍ以上３００μｍ以下程度がよい。また、本発明の第４の態様の半導体装置の製造方法は、ＡＭＢ基板、前記ＡＭＢ基板に電気的に接続された半導体チップ、前記半導体チップと電気的に接続された外部端子の一部を、着色剤を含有しない樹脂組成物であってガラス転移温度が２１０℃以上である第１樹脂組成物で封止する第１工程と、前記第１工程後、前記第１樹脂組成物より高いガラス転移温度を有し、着色剤を含有する第２樹脂組成物の樹脂粉体で前記第１樹脂組成物の表面を流動浸漬法により被覆する第２工程と、を含む。第２樹脂組成物が厚い場合は、第２樹脂組成物を成形するために金型を作成する必要があったが、本発明の方法の構成によれば、第２樹脂組成物を流動浸漬法で作成していることから、第２樹脂組成物を成形するための金型を作成する必要が無く、製造コストを低減できる。そして、高耐熱性であるため高価である第２樹脂組成物を樹脂粉体とし、第１樹脂組成物の表面を薄く被覆させているため、第２樹脂組成物の使用量を低減できるので、製造コストを低減できる。 Moreover, the 3rd aspect of this invention is making the thickness of the said 2nd resin composition into 100 micrometers or more and 500 micrometers or less in the said 1st or 2nd aspect. By doing so, the first resin composition can be satisfactorily coated with the second resin composition, and the second resin composition can be coated with little thickness unevenness. When the thickness of the second resin composition is less than 100 μm, a portion where the underlying first resin composition 15 is exposed is likely to occur. On the other hand, if it exceeds 500 μm, the thickness is likely to be uneven and the commercial value is lowered. Therefore, it is more preferable that the thickness is about 200 μm or more and 300 μm or less. According to a fourth aspect of the present invention, there is provided a method for manufacturing a semiconductor device comprising: an AMB substrate; a semiconductor chip electrically connected to the AMB substrate; and a part of an external terminal electrically connected to the semiconductor chip. A first step of sealing with a first resin composition that is a resin composition that does not contain a colorant and has a glass transition temperature of 210 ° C. or higher, and a glass transition higher than that of the first resin composition after the first step A second step of coating the surface of the first resin composition with a resin powder of a second resin composition having a temperature and containing a colorant by a fluidized dipping method. When the second resin composition is thick, it was necessary to create a mold for molding the second resin composition, but according to the method of the present invention, the second resin composition was flow-immersed. Therefore, it is not necessary to create a mold for molding the second resin composition, and the manufacturing cost can be reduced. And since it is high heat resistance and the second resin composition, which is expensive, is used as a resin powder and the surface of the first resin composition is thinly coated, the amount of the second resin composition used can be reduced. Manufacturing cost can be reduced.
また、本発明の第５の態様は、前記第４の態様において、前記流動浸漬法に用いられる前記樹脂粉体の粒径分布は、直径４０μｍより大きい前記樹脂粉体を２５重量％以下、かつ、直径３０μｍより小さい前記樹脂粉体を２５重量％以下である。この構成によれば、第２樹脂組成物による樹脂被膜を良好に形成できる。 According to a fifth aspect of the present invention, in the fourth aspect, the particle size distribution of the resin powder used in the fluidized immersion method is 25% by weight or less of the resin powder having a diameter of greater than 40 μm, and The resin powder having a diameter smaller than 30 μm is 25% by weight or less. According to this structure, the resin film by a 2nd resin composition can be formed favorable.
また、本発明の第６の態様は、前記第４または第５の態様において、前記第１工程の第１樹脂組成物の封止温度は、前記第２工程の第２樹脂組成物の被覆温度より高い。この構成によれば、半導体装置の内部は、さまざまな部品があるため樹脂の流動性が高いことが望ましいため、より高温にされており、半導体装置の外側は、高い流動性を要しない粉体樹脂を使った流動浸漬法であるため、内部に使用される第1樹脂組成物より低い温度で第２樹脂組成物を形成できる。第２樹脂組成物よる樹脂被膜を形成する温度が低いので、製造コストを低減できる。 Further, according to a sixth aspect of the present invention, in the fourth or fifth aspect, the sealing temperature of the first resin composition in the first step is a coating temperature of the second resin composition in the second step. taller than. According to this configuration, since there are various parts inside the semiconductor device, it is desirable that the resin fluidity is high, so the temperature is higher, and the outside of the semiconductor device is a powder that does not require high fluidity. Since it is a fluid immersion method using resin, the second resin composition can be formed at a temperature lower than that of the first resin composition used inside. Since the temperature at which the resin film is formed by the second resin composition is low, the manufacturing cost can be reduced.
また、本発明の第７の態様は、前記第６の態様において、前記樹脂粉体が、熱硬化性樹脂を主成分としているとよい。 In addition, according to a seventh aspect of the present invention, in the sixth aspect, the resin powder preferably contains a thermosetting resin as a main component.
また、本発明の第８の態様は、前記第７の態様において、前記第１樹脂組成物に用いられる樹脂がエポキシ樹脂であり、前記第２樹脂組成物に用いられる前記熱硬化性樹脂が、マレイミド変性エポキシ樹脂、マレイミド変性フェノール樹脂もしくはマレイミド樹脂のいずれか一つであるとよい。 Further, according to an eighth aspect of the present invention, in the seventh aspect, the resin used for the first resin composition is an epoxy resin, and the thermosetting resin used for the second resin composition is: Any one of a maleimide-modified epoxy resin, a maleimide-modified phenol resin, and a maleimide resin may be used.
また、本発明の第９の態様は、前記第４または第５の態様において、前記第１工程と前記第２工程との間に、前記外部端子の前記第１樹脂組成物で被覆されなかった部分の少なくとも一部を被覆材で覆う第３工程と、前記第２工程の後に前記被覆材を剥離する第４工程と、を備える。このような方法によれば、外部端子の第１樹脂組成物で被覆されなかった部分が被覆材で覆われているので、第２工程で第２樹脂組成物が付着しても第４工程で被覆材を剥離させるので、外部端子の露出表面を良好に形成することができる。 Further, according to a ninth aspect of the present invention, in the fourth or fifth aspect, the external terminal is not covered with the first resin composition between the first step and the second step . A third step of covering at least a part of the portion with a covering material; and a fourth step of peeling the covering material after the second step. According to such a method, since the portion of the external terminal that is not covered with the first resin composition is covered with the coating material, even if the second resin composition adheres in the second step, the fourth step Since the covering material is peeled off, the exposed surface of the external terminal can be favorably formed.
本発明によれば、簡便な設備で半導体装置の樹脂の外観色を変更でき、耐熱性の向上を図ることができ、製造コストを低減できる半導体装置および半導体装置の製造方法を提供することができる。 ADVANTAGE OF THE INVENTION According to this invention, the external color of resin of a semiconductor device can be changed with simple facilities, the heat resistance can be improved, and the manufacturing method of a semiconductor device and a semiconductor device that can reduce the manufacturing cost can be provided. .
この発明の半導体装置１００は、ＡＭＢ（Ａｃｔｉｖｅ Ｍｅｔａｌ Ｂｒａｚｉｎｇ）基板１と、前記ＡＭＢ基板１に電気的に接続された半導体チップ１１と、前記半導体チップ１１と電気的に接続された外部端子１３と、前記ＡＭＢ基板１、前記半導体チップ１１、前記外部端子１３の一部を封止し、着色剤を含有しない樹脂であって、ガラス転移温度が２１０℃以上である第１樹脂組成物１５と、前記第１樹脂組成物１５の表面を被覆し、前記第１樹脂組成物１５より高いガラス転移温度を有し、着色剤を含有する第２樹脂組成物１６と、を備えている。
実施の形態を以下の実施例で説明する。尚、下記の実施例に限定されるものではなく、その要旨を変更しない範囲内で適宜変形して実施することができるものである。
（実施例）
図１は、本発明に係る一実施例の半導体装置１００の要部断面図である。半導体装置１００は、樹脂封止構造を有している。従来のパワー半導体モジュール５００との違いは、顔料などの着色剤を含有しない未着色の第１樹脂組成物１５で絶縁基板６や半導体チップ１１をモールド成型し、さらに成形された第１樹脂組成物１５の表面を、着色剤を含有する第２樹脂組成物１６で被覆した点である。第１樹脂組成物１５の色は、ナチュラル樹脂の樹脂自身の色であり、例えばベージュ色をしている。第２樹脂組成物１６で被覆される前の半導体装置１００を予め製作しておいて、必要な時に、作成途中の半導体装置１００を着色された第２樹脂組成物１６で被覆すれば、その都度毎に第１樹脂組成物１５自体に色付けするよりも容易にしかも安価に色を付けることができる。第１樹脂組成物１５および第２樹脂組成物１６には、無機充填材や、硬化剤や、架橋剤などの内、少なくとも１種類以上を含有していてもよい。
A semiconductor device 100 of the present invention includes an AMB (Active Metal Brazing) substrate 1, a semiconductor chip 11 electrically connected to the AMB substrate 1, an external terminal 13 electrically connected to the semiconductor chip 11, A resin that seals part of the AMB substrate 1, the semiconductor chip 11, and the external terminals 13 and does not contain a colorant, and has a glass transition temperature of 210 ° C. or higher; A second resin composition 16 that covers the surface of the first resin composition 15, has a glass transition temperature higher than that of the first resin composition 15, and contains a colorant.
Embodiments will be described in the following examples. In addition, it is not limited to the following Example, It can implement by changing suitably within the range which does not change the summary.
(Example)
FIG. 1 is a cross-sectional view of a main part of a semiconductor device 100 according to an embodiment of the present invention. The semiconductor device 100 has a resin sealing structure. The difference from the conventional power semiconductor module 500 is that the insulating substrate 6 and the semiconductor chip 11 are molded with an uncolored first resin composition 15 that does not contain a colorant such as a pigment, and the molded first resin composition is further molded. The surface of 15 is covered with a second resin composition 16 containing a colorant. The color of the first resin composition 15 is the color of the natural resin itself, for example, beige. If the semiconductor device 100 before being coated with the second resin composition 16 is manufactured in advance, and the semiconductor device 100 being produced is covered with the colored second resin composition 16 when necessary, each time. It is easier and cheaper to color the first resin composition 15 every time than the first resin composition 15 itself. The first resin composition 15 and the second resin composition 16 may contain at least one or more of inorganic fillers, curing agents, and crosslinking agents.
半導体装置１００は、ＡＭＢ基板１と、絶縁回路基板５と、銅ピン９と、半導体チップ１１と、はんだ１０、１２、１４と、外部端子１３と、第１樹脂組成物１５と、第２樹脂組成物１６と、を備えている。
ＡＭＢ基板１は、セラミック板２と、セラミック板２の表側に厚銅板３と、セラミック板２の裏側に厚銅板４とを備えている。厚銅板３には回路配線パターンが形成されている。絶縁回路基板５は、絶縁板６と、絶縁板６の表側にある銅板７と、絶縁板６の裏側にある銅板８とを備えている。銅板７、８には、回路配線パターンが形成されている。絶縁回路基板５の銅板７，８には半導体チップ１１の主電流を流すので、絶縁回路基板５の銅板７，８の厚さは主電流の容量に応じた厚さを備えている。
半導体チップ１１の下面は、厚銅板３の上にはんだ１０を介して電気的に接続されている。半導体チップ１１の上面は、はんだ１２で銅ピン９と電気的に接続されている。銅ピン９は、絶縁回路基板５の銅板７、銅板８と電気的に接続されている。
外部端子１３は、厚銅板３の上に電気的に接続されており、厚銅板３とはんだ１０を介して半導体チップ１１と電気的に接続されている。
The semiconductor device 100 includes an AMB substrate 1, an insulating circuit substrate 5, a copper pin 9, a semiconductor chip 11, solders 10, 12, and 14, external terminals 13, a first resin composition 15, and a second resin. And a composition 16.
The AMB substrate 1 includes a ceramic plate 2, a thick copper plate 3 on the front side of the ceramic plate 2, and a thick copper plate 4 on the back side of the ceramic plate 2. A circuit wiring pattern is formed on the thick copper plate 3. The insulated circuit board 5 includes an insulating plate 6, a copper plate 7 on the front side of the insulating plate 6, and a copper plate 8 on the back side of the insulating plate 6. A circuit wiring pattern is formed on the copper plates 7 and 8. Since the main current of the semiconductor chip 11 flows through the copper plates 7 and 8 of the insulating circuit board 5, the thickness of the copper plates 7 and 8 of the insulating circuit board 5 has a thickness corresponding to the capacity of the main current.
The lower surface of the semiconductor chip 11 is electrically connected to the thick copper plate 3 via the solder 10. The upper surface of the semiconductor chip 11 is electrically connected to the copper pins 9 with solder 12. The copper pin 9 is electrically connected to the copper plate 7 and the copper plate 8 of the insulated circuit board 5.
The external terminal 13 is electrically connected on the thick copper plate 3 and is electrically connected to the semiconductor chip 11 via the thick copper plate 3 and the solder 10.
第１樹脂組成物１５は、絶縁回路基板５と、銅ピン９と、半導体チップ１１と、はんだ１０、１２、１４と、外部端子１３とを封止している。ただし、外部端子１３の上部と、厚銅板４の下面は、第１樹脂組成物１５から露出している。
第２樹脂組成物１６は、外部端子１３の上部と、厚銅板４の下面を除いて、第１樹脂組成物の周囲を封止している。第２樹脂組成物１６に添加する着色剤を変えることで、半導体装置１００の表面の色を自由に変えることができる。
半導体装置１００は、第１樹脂組成物１５によって、内部に配置された半導体チップ１１、ＡＭＢ基板１、絶縁回路基板５および外部端子１３などの相互間の絶縁性が確保されている。
The first resin composition 15 seals the insulating circuit board 5, the copper pins 9, the semiconductor chip 11, the solders 10, 12, and 14 and the external terminals 13. However, the upper part of the external terminal 13 and the lower surface of the thick copper plate 4 are exposed from the first resin composition 15.
The second resin composition 16 seals the periphery of the first resin composition except for the upper portion of the external terminal 13 and the lower surface of the thick copper plate 4. By changing the colorant added to the second resin composition 16, the color of the surface of the semiconductor device 100 can be freely changed.
In the semiconductor device 100, the first resin composition 15 ensures insulation between the semiconductor chip 11, the AMB substrate 1, the insulating circuit substrate 5, the external terminals 13, and the like disposed therein.
半導体装置１００の放熱は、厚銅板４の下面に図示しない冷却体を取り付けて行われる。またこの場合に、厚銅板４の下面と冷却体の間に、シリコーン系の放熱グリスなどのサーマルコンパウンドを塗布し、伝熱性を向上させている。また、放熱グリスの代わりに熱伝導シートを用いることもある。
次に、本発明の半導体装置の製造方法の一実施例を説明する。
図２は、半導体装置１００ａの外表面に第２樹脂組成物１６を形成する方法を示した図である。図２（ａ）〜図２（ｃ）は、工程順に示した要部工程図である。
本発明の半導体装置の製造方法は、ＡＭＢ基板、前記ＡＭＢ基板に電気的に接続された半導体チップ、前記半導体チップと電気的に接続された外部端子の一部を、着色剤を含有しない樹脂組成物であってガラス転移温度が２１０℃以上である第１樹脂組成物で封止する第１工程Ｓ１と、前記第１工程後、前記第１樹脂組成物より高いガラス転移温度を有し、着色剤を含有する第２樹脂組成物の樹脂粉体で前記第１樹脂組成物の表面を流動浸漬法により被覆する第２工程Ｓ２と、を含むことを特徴とする。
より具体的には、まず、図２（ａ）の半導体装置１００ａのように、ＡＭＢ基板１と、絶縁回路基板５と、銅ピン９と、はんだ１０、１２、１４と、半導体チップ１１と、外部端子１３と、を備えた内部構造体が組み立てられ、この内部構造体がリフロー炉を通されてはんだ付けした。
Heat dissipation of the semiconductor device 100 is performed by attaching a cooling body (not shown) to the lower surface of the thick copper plate 4. In this case, a thermal compound such as silicone-based heat radiation grease is applied between the lower surface of the thick copper plate 4 and the cooling body to improve heat transfer. Moreover, a heat conductive sheet may be used instead of the heat radiation grease.
Next, an embodiment of a method for manufacturing a semiconductor device of the present invention will be described.
FIG. 2 is a view showing a method of forming the second resin composition 16 on the outer surface of the semiconductor device 100a. FIG. 2A to FIG. 2C are main part process diagrams shown in the order of processes.
A method of manufacturing a semiconductor device according to the present invention includes an AMB substrate, a semiconductor chip electrically connected to the AMB substrate, and a resin composition that does not contain a colorant for some of the external terminals electrically connected to the semiconductor chip. A first step S1 for sealing with a first resin composition having a glass transition temperature of 210 ° C. or higher, and a glass transition temperature higher than that of the first resin composition after the first step, and coloring And 2nd process S2 which coat | covers the surface of the said 1st resin composition with a fluid immersion method with the resin powder of the 2nd resin composition containing an agent, It is characterized by the above-mentioned.
More specifically, first, as in the semiconductor device 100a of FIG. 2A, an AMB substrate 1, an insulating circuit substrate 5, a copper pin 9, solders 10, 12, and 14, a semiconductor chip 11, An internal structure including the external terminals 13 was assembled, and the internal structure was soldered by passing through a reflow furnace.
次に、第１工程Ｓ１では、図２（ａ）の半導体装置１００ａのように、顔料などの着色剤を配合しない樹脂（ガラス転移温度Ｔｇ＝２１０℃）である第１樹脂組成物１５で、例えば１８０℃でモールド成型して内部構造体を樹脂封止した。この段階で未着色の第１樹脂組成物１５を有する半導体装置１００ａが出来上がる。
次に、図２（ａ）に示したように、外部端子１３の一端に被覆材２４を形成し、厚銅板４の下面に被覆材２７を形成した。そして、恒温槽２１に入れて１６０℃で予熱をした。
次に、第２工程Ｓ２では、図２（ｂ）に示すように、１５０℃の流動槽２２内に、着色剤が配合された樹脂粉体２３（ガラス転移温度Ｔｇ＝２３５℃）を入れ、空気で樹脂粉体２３を流動化させ、その中に未着色の半導体装置１００ａを３０分浸漬させた。このとき、第１樹脂組成物１５から露出した外部端子や、厚銅板４の底面、および第１樹脂組成物１５の裏面は、被覆材２４，２７で被覆されているので樹脂粉体２３が直接付着しないようにした。
Next, in the first step S1, the first resin composition 15 is a resin (glass transition temperature Tg = 210 ° C.) that does not contain a colorant such as a pigment as in the semiconductor device 100a of FIG. For example, the internal structure was resin-sealed by molding at 180 ° C. At this stage, the semiconductor device 100a having the uncolored first resin composition 15 is completed.
Next, as shown in FIG. 2A, a coating material 24 was formed on one end of the external terminal 13, and a coating material 27 was formed on the lower surface of the thick copper plate 4. And it put in the thermostat 21 and pre-heated at 160 degreeC.
Next, in the second step S2, as shown in FIG. 2 (b), a resin powder 23 (glass transition temperature Tg = 235 ° C.) in which a colorant is blended is placed in a fluidized tank 22 at 150 ° C., The resin powder 23 was fluidized with air, and the uncolored semiconductor device 100a was immersed therein for 30 minutes. At this time, the external terminals exposed from the first resin composition 15, the bottom surface of the thick copper plate 4, and the back surface of the first resin composition 15 are covered with the coating materials 24 and 27, so the resin powder 23 is directly applied. I tried not to stick.
以下に、樹脂粉体２３によって第１樹脂組成物１５に樹脂被膜１６を被覆する方法について、より詳しく説明する。流動浸漬法とは、流動槽の中に多孔質の上げ底板を置き、流動槽内の上げ底板の上側に樹脂粉体を入れ、上げ底板の下側から空気を吹き込んで流動槽内の樹脂粉体を流動させ、浮遊する樹脂粉体中に予熱された第１樹脂組成物１５を浸漬し、第１樹脂組成物１５表面に樹脂粉体を溶融流動させ、連続した樹脂被膜１６を形成する方法である。樹脂被膜１６の厚さＴは、１００μｍ以上、５００μｍ以下であるとよい。本実施例では、厚さ２００μｍの樹脂被膜１６を形成した。
樹脂被膜１６の色としては、赤色、青色、緑色、黄色、黒色などがあり着色剤が配合されていない第１樹脂組成物１５の色（例えば、ベージュ色）とは異なっている。また、色としてはこれらに限定されることはない。着色剤は特に限定されないが、例えば有機系着色剤や、無機系顔料や、カーボンブラックなどが用いられる。着色剤の濃度は、樹脂粉体２３に対して、例えばｐｐｍオーダの濃度である。着色させる色は、赤色、青色、緑色、黄色、黒色でそれぞれＵＳＰＣＢ試験と耐熱性試験を行い、それぞれ同様の結果を得た。代表として、実験結果を表１に示した。前記したいずれの色でも樹脂被膜１６のガラス転移温度Ｔｇは２３５℃であり、第１樹脂組成物１５のガラス転移温度Ｔｇである２１０℃より高かった。前記の樹脂粉体２３の粒子径は３０μｍ以上４０μｍ以下の範囲に揃っていると望ましい。しかし、実際用いられている樹脂粉体２３の粒子径は、粒子径分布を有しており、３０μｍ未満が２５％程度以下、３０μｍ以上４０μｍ以下が５０％程度、４０μｍ超が２５％程度以下の粒子径分布であってもよい。
Hereinafter, a method for coating the first resin composition 15 with the resin film 16 with the resin powder 23 will be described in more detail. In the fluid immersion method, a porous raised bottom plate is placed in a fluidized tank, resin powder is placed on the upper side of the raised bottom plate in the fluidized tank, and air is blown from the lower side of the raised bottom plate to resin resin in the fluidized tank. A method of forming a continuous resin film 16 by flowing a body, immersing a preheated first resin composition 15 in a floating resin powder, and melting and flowing the resin powder on the surface of the first resin composition 15 It is. The thickness T of the resin coating 16 is preferably 100 μm or more and 500 μm or less. In this example, a resin film 16 having a thickness of 200 μm was formed.
The color of the resin coating 16 includes red, blue, green, yellow, black, and the like, and is different from the color (for example, beige) of the first resin composition 15 in which no colorant is blended. The colors are not limited to these. Although a colorant is not specifically limited, For example, an organic colorant, an inorganic pigment, carbon black, etc. are used. The concentration of the colorant is, for example, on the order of ppm with respect to the resin powder 23. The colors to be colored were red, blue, green, yellow, and black, respectively, and the USPCB test and the heat resistance test were performed, respectively, and similar results were obtained. As a representative, the experimental results are shown in Table 1. In any of the colors described above, the glass transition temperature Tg of the resin coating 16 was 235 ° C., which was higher than 210 ° C., which is the glass transition temperature Tg of the first resin composition 15. The resin powder 23 preferably has a particle diameter in the range of 30 μm to 40 μm. However, the particle diameter of the resin powder 23 actually used has a particle size distribution, and less than 30% is less than about 25%, more than 30 μm and less than 40 μm is about 50%, and more than 40 μm is less than about 25%. It may be a particle size distribution.
前記の実施例では、第１樹脂組成物１５は、固体の樹脂材を用いてトランスファーで成型して製作したが、液状の樹脂材をポッティングして製作する場合もある。つまり、第１樹脂組成物１５の素材としての樹脂材は、液体でも固体でも構わない。樹脂材が液体の場合は、ポッテング法で封止が行われる。樹脂材が固体の場合は、トランスファー法で封止が行われる。
また、着色された樹脂被膜１６となる樹脂粉体２３の材質は、ガラス転移温度Ｔｇが第１樹脂組成物１５より高い熱硬化性樹脂である、マレイミド変性エポキシ樹脂、マレイミド変性フェノール樹脂、マレイミド樹脂などの高耐熱樹脂を使用できる。本実施例では、第１樹脂組成物としてエポキシ樹脂を用い、第２樹脂組成物としてマレイミド樹脂を用いた。
In the above-described embodiment, the first resin composition 15 is manufactured by molding using a solid resin material by transfer, but may be manufactured by potting a liquid resin material. That is, the resin material as the material of the first resin composition 15 may be liquid or solid. When the resin material is liquid, sealing is performed by a potting method. When the resin material is solid, sealing is performed by a transfer method.
The material of the resin powder 23 to be the colored resin coating 16 is a maleimide-modified epoxy resin, a maleimide-modified phenol resin, or a maleimide resin, which is a thermosetting resin having a glass transition temperature Tg higher than that of the first resin composition 15. High heat resistant resin can be used. In this example, an epoxy resin was used as the first resin composition, and a maleimide resin was used as the second resin composition.
また、着色された樹脂被膜１６は流動浸漬法を用いて形成するため、半導体装置１００は、比較的安価な設備で製造できる。尚、流動浸漬法以外に、溶融流動化した樹脂粉体２３を刷毛などを用いて塗布する場合もある。また、本発明では、第１樹脂組成物１５の外周部分を高耐熱の樹脂粉体２３を被膜化した樹脂被膜１６で被覆することにより、第１樹脂組成物１５へ不純物が導入されることを抑制して、第１樹脂組成物１５の表面の色を容易に変えることができる。また、第１樹脂組成物１５よりも高い耐熱性（高いガラス転移温度Ｔｇ）を有する樹脂被膜１６で第１樹脂組成物１５を被覆することにより、半導体装置１００の耐熱性を表１で示すように後述の比較例１に比べて向上させることができる。そうすると、図（ｃ）に示すように、第１樹脂組成物１５の表面に第２樹脂組成物１６が形成される。 Moreover, since the colored resin film 16 is formed using a fluidized immersion method, the semiconductor device 100 can be manufactured with relatively inexpensive equipment. In addition to the fluid immersion method, the melted and fluidized resin powder 23 may be applied using a brush or the like. In the present invention, the outer peripheral portion of the first resin composition 15 is covered with the resin film 16 formed by coating the high heat-resistant resin powder 23 to introduce impurities into the first resin composition 15. It can suppress and can change the color of the surface of the 1st resin composition 15 easily. Further, the heat resistance of the semiconductor device 100 is shown in Table 1 by coating the first resin composition 15 with the resin film 16 having higher heat resistance (high glass transition temperature Tg) than that of the first resin composition 15. This can be improved as compared with Comparative Example 1 described later. Then, the second resin composition 16 is formed on the surface of the first resin composition 15 as shown in FIG.
次に、対象物を流動槽２２から取り出し、被覆材２４、２７を剥離する。
このようにして、半導体装置１００ａは、着色された第２樹脂組成物１６の樹脂被膜で被覆され、図１に示す半導体装置１００が完成する。
なお、半導体装置１００ａに樹脂被膜１６を形成することは、図１のように絶縁回路基板５と銅ピン９を用いた内部構造体に限ることはなく、例えば、絶縁回路基板５などの代わりに、ボンディングワイヤやリードフレームを用いた半導体装置にも適用できる。
Next, the object is taken out from the fluid tank 22 and the covering materials 24 and 27 are peeled off.
Thus, the semiconductor device 100a is covered with the resin film of the colored second resin composition 16, and the semiconductor device 100 shown in FIG. 1 is completed.
The formation of the resin film 16 on the semiconductor device 100a is not limited to the internal structure using the insulating circuit board 5 and the copper pins 9 as shown in FIG. It can also be applied to a semiconductor device using a bonding wire or a lead frame.
（比較例１）
図３は、図１の半導体装置１００の比較例を示す半導体装置２００の要部断面図である。図１の半導体装置１００との違いは、半導体装置２００の樹脂組成物２０が、顔料などの着色剤が配合されたエポキシペーストを用いて成型され、その結果、樹脂組成物２０自体が着色されている点である。赤色、青色、緑色、黄色、黒色の各着色剤にそれぞれ変えた条件で実験を行ったところ、それぞれ表１の比較例１に示した結果と同様の結果を得た。いずれの色でも樹脂組成物２０のガラス転移温度Ｔｇは２１０℃であった。
(Comparative Example 1)
FIG. 3 is a cross-sectional view of main parts of a semiconductor device 200 showing a comparative example of the semiconductor device 100 of FIG. A difference from the semiconductor device 100 of FIG. 1 is that the resin composition 20 of the semiconductor device 200 is molded using an epoxy paste in which a colorant such as a pigment is blended, and as a result, the resin composition 20 itself is colored. It is a point. When an experiment was performed under the conditions changed to red, blue, green, yellow, and black colorants, the same results as those shown in Comparative Example 1 of Table 1 were obtained. In any color, the glass transition temperature Tg of the resin composition 20 was 210 ° C.
（比較例２）
比較例２は、比較例１の着色剤を除いたこと以外は、同様に実験を行った実験結果である。樹脂組成物２０のガラス転移温度Ｔｇは２１０℃であった。
（不飽和プレッシャークッカーバイアス試験（ＵＳＰＣＢ試験））
前記の実施例の半導体装置１００、比較例１の半導体装置２００、第２樹脂組成物で被覆する前の半導体装置１００であって第１樹脂組成物に着色剤を含有しないナチュラル品の樹脂を使用したもの（比較例２）について、ＵＳＰＣＢ試験を実施した。ＵＳＰＣＢ試験の試験条件は例えば、温度が１２０℃、湿度が８５％、蒸気圧が１．７×１０５Ｐａであり、これは耐湿性をチェックする耐湿性試験である。
(Comparative Example 2)
Comparative Example 2 is the result of an experiment conducted in the same manner except that the colorant of Comparative Example 1 was omitted. The glass transition temperature Tg of the resin composition 20 was 210 ° C.
(Unsaturated pressure cooker bias test (USPCB test))
The semiconductor device 100 of the above example, the semiconductor device 200 of the comparative example 1, the semiconductor device 100 before being coated with the second resin composition, and the first resin composition using a natural product resin that does not contain a colorant The USPCB test was conducted on the product (Comparative Example 2). The test conditions of the USPCB test are, for example, a temperature of 120 ° C., a humidity of 85%, and a vapor pressure of 1.7 × 10 5 Pa. This is a moisture resistance test for checking the moisture resistance.
（耐熱性試験）
前記の実施例の半導体装置１００、比較例１の半導体装置２００、第２樹脂組成物で被覆する前の半導体装置１００であって第１樹脂組成物に着色剤を含有しないナチュラル品の樹脂を使用したもの（比較例２）について、ＵＬ１５５７規格の加速試験条件に準じた試験を実施した。ＵＬ１５５７規格の試験条件は、例えば、調査対象物を２００℃および２３０℃の条件で所定時間加熱する加速温度試験であり、耐熱性をチェックする耐熱性試験である。尚、この耐熱性試験は、オーブン内で加速条件の温度で長時間加熱した後、３ｋＶで１０秒間パルス電圧を印加し、絶縁性が維持されるかどうかの有無で行った。また、このＵＬ１５５７規格の加速条件が２００℃、６０００時間以上で１７５℃の耐熱性が保証され、２３０℃で４８００時間以上で２００℃の耐熱性が保証される。
ＵＳＰＣＢ試験と耐熱性試験の結果を表１に示す。
(Heat resistance test)
The semiconductor device 100 of the above example, the semiconductor device 200 of the comparative example 1, the semiconductor device 100 before being coated with the second resin composition, and the first resin composition using a natural product resin that does not contain a colorant The test (Comparative Example 2) was conducted according to the accelerated test conditions of the UL1557 standard. The UL1557 standard test conditions are, for example, an accelerated temperature test in which an investigation object is heated for a predetermined time at 200 ° C. and 230 ° C., and a heat resistance test for checking heat resistance. This heat resistance test was conducted by checking whether or not the insulation was maintained by applying a pulse voltage at 3 kV for 10 seconds after heating in an oven for a long time at a temperature under acceleration conditions. Further, when the acceleration condition of the UL1557 standard is 200 ° C. for 6000 hours or more, heat resistance of 175 ° C. is guaranteed, and for 230 ° C. for 4800 hours or more, heat resistance of 200 ° C. is guaranteed.
Table 1 shows the results of the USPCB test and the heat resistance test.
表１に示したように、ＵＳＰＣＢ試験結果は、実施例の半導体装置では４００時間、比較例１の半導体装置では３００時間、着色剤を含有しないナチュラル品の樹脂を使用した比較例２の半導体装置では４００時間であった。従って、実施例の半導体装置は、従来の着色剤を含有しないナチュラル品の樹脂を使用した半導体装置（すなわち、比較例２）と同等の性能であることが判る。一方、比較例１の半導体装置は、３００時間であり、実施例の半導体装置より短い。これは、比較例１の半導体装置では、着色エポキシペーストを配合した樹脂で樹脂組成物２０を成型しているため、樹脂の不純物濃度が上がり、腐食が発生したためと推測される。 As shown in Table 1, the USPCB test results are as follows. The semiconductor device of Comparative Example 2 uses a natural resin that does not contain a colorant for 400 hours for the semiconductor device of the example and 300 hours for the semiconductor device of Comparative Example 1. Then it was 400 hours. Therefore, it can be seen that the semiconductor device of the example has the same performance as a semiconductor device using a natural resin that does not contain a conventional colorant (that is, Comparative Example 2). On the other hand, the semiconductor device of Comparative Example 1 is 300 hours shorter than the semiconductor device of the example. This is presumably because, in the semiconductor device of Comparative Example 1, since the resin composition 20 is molded with a resin containing a colored epoxy paste, the impurity concentration of the resin increases and corrosion occurs.
また、表１に示したように、耐熱性試験結果は、実施例の半導体装置では２００℃、比較例１の半導体装置２００は１７５℃、比較例２の半導体装置では２００℃であった。従って、実施例の半導体装置は、従来の着色剤を含有しないナチュラル品の樹脂を使用した半導体装置（すなわち、比較例２）と同等の性能であることが判る。一方、比較例１の半導体装置は、１７５℃であり、実施例の半導体装置より耐熱性が低下した。これは、実施例の着色した樹脂被膜１６で被覆された第１樹脂組成物１５の表面のガラス転移温度Ｔｇ（２３５℃）に比べて、比較例１の樹脂組成物２０のガラス転移温度Ｔｇ（２１０℃）の方が低いためと考えられる。 As shown in Table 1, the heat resistance test results were 200 ° C. for the semiconductor device of the example, 175 ° C. for the semiconductor device 200 of Comparative Example 1, and 200 ° C. for the semiconductor device of Comparative Example 2. Therefore, it can be seen that the semiconductor device of the example has the same performance as a semiconductor device using a natural resin that does not contain a conventional colorant (that is, Comparative Example 2). On the other hand, the semiconductor device of Comparative Example 1 was 175 ° C., and its heat resistance was lower than that of the semiconductor device of the example. This is compared to the glass transition temperature Tg (235 ° C.) of the surface of the first resin composition 15 coated with the colored resin film 16 of the example, compared with the glass transition temperature Tg ( This is probably because the temperature at 210 ° C. is lower.
以上の結果から、樹脂粉体２３を用いて着色した半導体装置１００は着色剤を含有しない樹脂で形成した第１樹脂組成物１５を有する半導体装置１００ａと同等の信頼性が確保できることが分かった。つまり、着色による信頼性の低下は発生しないことが分かった。また、比較例１で示した半導体装置より信頼性を向上できることが分かった。 From the above results, it was found that the semiconductor device 100 colored using the resin powder 23 can ensure the same reliability as the semiconductor device 100a having the first resin composition 15 formed of a resin containing no colorant. That is, it has been found that the reliability is not lowered by coloring. It was also found that the reliability can be improved as compared with the semiconductor device shown in Comparative Example 1.
また、本発明の樹脂粉体２３を用いて行う着色は、流動浸漬法を用いるため、着色エポキシペーストを配合した樹脂でトランスファー法を用いて行う着色より、製造設備は安価にできる。 In addition, since the coloring performed using the resin powder 23 of the present invention uses a fluidized dipping method, the production equipment can be made cheaper than coloring performed using a transfer method with a resin containing a colored epoxy paste.
１ ＡＭＢ基板
２ セラミック板
３，４ 厚銅板
５ 絶縁回路基板
６ 絶縁板
７，８ 銅板
９ 銅ピン
１０，１２，１４ はんだ
１１ 半導体チップ
１３ 外部端子
１５ 第１樹脂組成物
１６ 樹脂被膜（第２樹脂組成物）
２０ 樹脂組成物
２１ 恒温槽
２２ 流動槽
２３ 着色剤を含有した樹脂粉体
２４ 被覆材
２５ 多孔質の上げ底板
２６ ブロア
１００，２００ 半導体装置
Ｓ１ 第１工程
Ｓ２ 第２工程
Ｔ 樹脂被膜の厚さ
DESCRIPTION OF SYMBOLS 1 AMB board | substrate 2 Ceramic board 3, 4 Thick copper board 5 Insulation circuit board 6 Insulation board 7, 8 Copper board 9 Copper pin 10, 12, 14 Solder 11 Semiconductor chip 13 External terminal 15 1st resin composition 16 Resin film (2nd resin) Composition)
20 Resin Composition 21 Constant Temperature Bath 22 Fluid Bath 23 Resin Powder 24 Containing Colorant Coating Material 25 Porous Raised Bottom Plate Blower 100, 200 Semiconductor Device S1 First Step S2 Second Step T Resin Film Thickness
Claims (9)
前記ＡＭＢ基板に電気的に接続された半導体チップと、
前記半導体チップと電気的に接続された外部端子と、
前記ＡＭＢ基板、前記半導体チップ、前記外部端子の一部を封止し、着色剤を含有しない樹脂であって、ガラス転移温度が２１０℃以上である第１樹脂組成物と、
前記第１樹脂組成物の表面を被覆し、前記第１樹脂組成物より高いガラス転移温度を有し、着色剤を含有する第２樹脂組成物と、
を備えることを特徴とする半導体装置。 An AMB substrate;
A semiconductor chip electrically connected to the AMB substrate;
An external terminal electrically connected to the semiconductor chip;
A resin that seals a part of the AMB substrate, the semiconductor chip, and the external terminals and does not contain a colorant, and has a glass transition temperature of 210 ° C. or higher;
A second resin composition that covers the surface of the first resin composition, has a glass transition temperature higher than that of the first resin composition, and contains a colorant;
A semiconductor device comprising:
前記第２樹脂組成物のガラス転移温度が２３５℃以上であることを特徴とする半導体装置。 The semiconductor device according to claim 1,
A semiconductor device, wherein the glass transition temperature of the second resin composition is 235 ° C. or higher.
前記第２樹脂組成物の厚さが、１００μｍ以上、５００μｍ以下であることを特徴とする半導体装置。 The semiconductor device according to claim 1 or 2,
The thickness of the said 2nd resin composition is 100 micrometers or more and 500 micrometers or less, The semiconductor device characterized by the above-mentioned.
前記第１工程後、前記第１樹脂組成物より高いガラス転移温度を有し、着色剤を含有する第２樹脂組成物の樹脂粉体で前記第１樹脂組成物の表面を流動浸漬法により被覆する第２工程と、
を含むことを特徴とする半導体装置の製造方法。 An AMB substrate, a semiconductor chip electrically connected to the AMB substrate, and a part of external terminals electrically connected to the semiconductor chip are resin compositions containing no colorant and having a glass transition temperature of 210 ° C. A first step of sealing with the first resin composition as described above;
After the first step, the surface of the first resin composition is coated by a flow dipping method with a resin powder of a second resin composition having a glass transition temperature higher than that of the first resin composition and containing a colorant. A second step of
A method for manufacturing a semiconductor device, comprising:
前記流動浸漬法に用いられる前記樹脂粉体の粒径分布は、直径４０μｍより大きい前記樹脂粉体を２５重量％以下、かつ、直径３０μｍより小さい前記樹脂粉体を２５重量％以下であることを特徴とする半導体装置の製造方法。 In the manufacturing method of the semiconductor device according to claim 4,
The particle size distribution of the resin powder used in the fluidized immersion method is 25% by weight or less for the resin powder larger than 40 μm in diameter and 25% by weight or less for the resin powder smaller than 30 μm in diameter. A method of manufacturing a semiconductor device.
前記第１工程の第１樹脂組成物の封止温度は、前記第２工程の第２樹脂組成物の被覆温度より高いことを特徴とする半導体装置の製造方法。 In the manufacturing method of the semiconductor device according to claim 4 or 5,
The method for manufacturing a semiconductor device, wherein a sealing temperature of the first resin composition in the first step is higher than a coating temperature of the second resin composition in the second step.
前記樹脂粉体が、熱硬化性樹脂を主成分とすることを特徴とする半導体装置の製造方法。 In the manufacturing method of the semiconductor device according to claim 6,
A method of manufacturing a semiconductor device, wherein the resin powder contains a thermosetting resin as a main component.
前記第１樹脂組成物に用いられる樹脂がエポキシ樹脂であり、
前記第２樹脂組成物に用いられる前記熱硬化性樹脂が、マレイミド変性エポキシ樹脂、マレイミド変性フェノール樹脂もしくはマレイミド樹脂のいずれか一つであることを特徴とする半導体装置の製造方法。 In the manufacturing method of the semiconductor device according to claim 7,
The resin used for the first resin composition is an epoxy resin,
The method for manufacturing a semiconductor device, wherein the thermosetting resin used in the second resin composition is any one of a maleimide-modified epoxy resin, a maleimide-modified phenol resin, or a maleimide resin.
前記第１工程と前記第２工程との間に、前記外部端子の前記第１樹脂組成物で被覆されなかった部分の少なくとも一部を被覆材で覆う第３工程と、
前記第２工程の後に前記被覆材を剥離する第４工程と、
を備えることを特徴とする半導体装置の製造方法。
In the manufacturing method of the semiconductor device according to claim 4 or 5,
Between the first step and the second step , a third step of covering at least a part of the portion of the external terminal not covered with the first resin composition with a covering material;
A fourth step of peeling the covering material after the second step;
A method for manufacturing a semiconductor device, comprising:
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